Film forming apparatus, film forming method, and method for manufacturing electronic device

Abstract

This invention provides a film-forming apparatus, a film-forming method, and a method for manufacturing electronic devices, achieving film formation through a film-forming method that is less prone to manufacturing defects. The film-forming unit includes a film-forming source that dispenses film-forming material and forms a film on a substrate while moving. A baffle prevents the film-forming material dispensed from the film-forming source from scattering onto the substrate. A moving member opens and closes the baffle. The moving member, in conjunction with the movement of the film-forming unit in a first direction, moves the baffle from a fully closed position to a fully open position in the first direction, and during film formation on the substrate, the baffle covers a portion of the substrate.

Description

Technical Field

[0001] This invention relates to film-forming apparatus, film-forming method, and method for manufacturing electronic devices. Background Technology

[0002] In the manufacture of organic EL displays, a thin film is formed on a substrate by depositing a vapor-deposited material emitted from an evaporation source onto the substrate. Patent Document 1 describes a vapor deposition apparatus comprising: a vapor deposition source that deposits vapor onto a substrate while moving; a mask stage that supports a mask and the substrate during vapor deposition; and a baffle that controls the injection of vapor-deposited material from the vapor deposition source onto the substrate disposed on the mask stage by opening and closing. In this vapor deposition apparatus, with the baffle covering the substrate to be vapor-deposited open, vapor deposition is performed on the substrate by the evaporation source passing beneath the substrate.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-196684 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] Furthermore, in film deposition apparatuses, it is desirable to use film deposition methods that are less prone to producing manufacturing defects. For example, when there is insufficient time for alignment of the substrate and mask, defects can easily occur due to inadequate alignment. In addition, for example, if the baffle is opened when the substrate and mask are not aligned, the film deposition material floating in the chamber may sometimes adhere to the substrate, which can easily lead to reduced uniformity of film thickness or defects caused by film deposition in areas not intended for film deposition.

[0008] This invention provides a technique for film formation using a film-forming method that is less prone to manufacturing defects.

[0009] Solution for solving the problem

[0010] According to one aspect of the present invention,

[0011] A film-forming apparatus is provided, characterized in that,

[0012] The film-forming device has the following features:

[0013] The film-forming unit includes a film-forming source that emits film-forming material and forms a film on a substrate while reciprocating in a moving direction.

[0014] A baffle to prevent the film-forming material emitted from the film-forming source from scattering onto the substrate; and

[0015] The moving part opens and closes the baffle;

[0016] The movement of the moving component and the movement of the film-forming unit toward the first side in the moving direction cause the baffle to move from a fully closed position to a fully open position toward the first side.

[0017] During the film formation process on the substrate by the film-forming unit, the substrate is partially covered by the baffle.

[0018] Furthermore, according to the present invention,

[0019] A film-forming method is provided, characterized in that,

[0020] The film-forming method includes:

[0021] The process includes a film-forming source that emits film-forming material and a film-forming unit that reciprocates in a moving direction, performing a film-forming process on a substrate while moving towards a first side in the moving direction; and

[0022] The process in which a baffle that blocks the film-forming material emitted from the film-forming source from scattering toward the substrate moves toward the first side from a fully closed position to a fully open position in conjunction with the movement of the film-forming unit toward the first side.

[0023] During the film formation process on the substrate by the film-forming unit, the substrate is partially covered by the baffle.

[0024] Furthermore, according to the present invention,

[0025] A method for manufacturing an electronic device is provided, characterized in that,

[0026] The manufacturing method of the electronic device includes a film-forming process, which forms a film on a substrate using the aforementioned film-forming method.

[0027] The effects of the invention

[0028] According to the present invention, film formation can be performed using a film formation method that is less prone to manufacturing defects. Attached Figure Description

[0029] Figure 1 This is a top view schematically showing the structure of a film-forming system provided with a film-forming apparatus according to one embodiment.

[0030] Figure 2 This is a schematic front view showing the structure of the film-forming device.

[0031] Figure 3 It is a diagram used to illustrate the structure of the film-forming unit and the release range of the film-forming material from the film-forming source.

[0032] Figure 4 This is a diagram illustrating the film-forming process of the film-forming device.

[0033] Figure 5 This is a diagram illustrating the film-forming process of the film-forming device.

[0034] Figure 6 (A) is an overall view of the organic EL display device, and (B) is a view showing the cross-sectional structure of one pixel.

[0035] Explanation of reference numerals in the attached figures

[0036] 1: Film forming apparatus, 10: Evaporation source unit, 12: Evaporation source, 100: Substrate, 101: Mask. Detailed Implementation

[0037] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the invention as defined in the claims. Although multiple features are described in the embodiments, these features are not all limited to those essential to the invention, and multiple features may be combined arbitrarily. In the accompanying drawings, the same or identical structures are labeled with the same reference numerals, and repeated descriptions are omitted.

[0038] <Overview of film-forming systems>

[0039] Figure 1 This is a schematic top view illustrating the structure of a film-forming system SY provided with a film-forming apparatus 1 according to one embodiment. The film-forming system SY is a system that performs film-forming processing on an incoming substrate and removes the processed substrate. For example, an electronic device production line can be constructed by arranging multiple film-forming systems SY. Examples of electronic devices include, for instance, the display panel of an organic EL display device used in smartphones. In addition to the film-forming apparatus 1, the film-forming system SY includes an infeed chamber 30, a substrate transport chamber 32, an outfeed chamber 34, and a mask storage chamber 36. The structure of the film-forming apparatus 1 will be described later.

[0040] In the loading chamber 30, a substrate 6, which has undergone film deposition by the film deposition apparatus 1, is loaded. A transport robot 320 for transporting the substrate 6 is installed in the substrate transport chamber 32. The transport robot 320 transports the substrate 6 loaded into the loading chamber 30 to the film deposition apparatus 1. Furthermore, the transport robot 320 transports the substrate 6, whose film deposition process has been completed in the film deposition apparatus 1, to the unloading chamber 34. The substrate 6 transported to the unloading chamber 34 by the transport robot 320 is then removed from the unloading chamber 34 to the outside of the film deposition system SY. Additionally, when multiple film deposition systems SY are arranged in a row, the unloading chamber 34 of the upstream film deposition system SY can also serve as the substrate transport chamber 32 of the downstream film deposition system SY. Furthermore, a mask 7 used in film deposition in the film deposition apparatus 1 is stored in the mask storage chamber 36. The mask 7 stored in the mask storage chamber 36 is transported to the film deposition apparatus 1 by the transport robot 320.

[0041] The film-forming apparatus 1, which constitutes the film-forming system SY, and the interior of each chamber are maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. Furthermore, in this embodiment, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure; in other words, it refers to a depressurization state.

[0042] <Film Forming Device>

[0043] Figure 2 This is a schematic front view showing the structure of the film-forming apparatus 1. The film-forming apparatus 1 is a film-forming apparatus that performs film formation while moving the film-forming source 140 relative to the substrate 6. In this embodiment, film formation is performed on the substrate 6 by vapor deposition. As the material of the substrate to which vapor deposition is performed in the film-forming apparatus 1, glass, resin, metal, etc., can be appropriately selected, and a material with a resin layer such as polyimide formed on glass is preferred. As the film-forming material, organic materials, inorganic materials (metals, metal oxides, etc.), etc., are used. The film-forming apparatus 1 can be applied to manufacturing apparatuses for electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, organic photoelectric conversion elements (organic thin-film camera elements), optical components, etc., and in particular, it can be applied to manufacturing apparatuses for organic EL panels. In addition, as the size of the substrate to which film is formed in the film-forming apparatus 1, examples of substrates with a G8H size (1100mm × 2500mm, 1250mm × 2200mm) can be included, but the size of the substrate to which film is formed in the film-forming apparatus 1 can be appropriately set.

[0044] The film forming apparatus 1 includes a chamber 10, film forming stages 12A and 12B, a film forming unit 14, baffles 16A and 16B, a moving part 18A and 18B, and a control part 20.

[0045] The chamber 10 houses the film-forming unit 14, baffles 16A and 16B, moving parts 18A and 18B, and film-forming stages 12A and 12B within its internal space 101. The internal space 101 of the chamber 10 can be maintained at a vacuum by an exhaust mechanism such as a vacuum pump (not shown). For example, an opening (not shown) is provided in the chamber 10 for moving the substrate 6 in and out, through which the substrate 6 can be moved between the chamber 10 and the substrate transport chamber 32.

[0046] Film deposition stages 12A and 12B are used for depositing films on substrate 6. In this embodiment, film deposition stages 12A and 12B are arranged adjacent to each other. In the following description, film deposition is performed on substrate 6A on film deposition stage 12A and on substrate 6B on film deposition stage 12B.

[0047] The film deposition stage 12A includes a substrate support 120A, a mask stage 122A, a support column 124A, and an alignment mechanism 126A.

[0048] The substrate support portion 120A supports the substrate 6A. In this embodiment, the substrate support portion 120A supports the substrate 6A such that the short side of the substrate 6A extends in the X direction and the long side of the substrate 6A extends in the Y direction. Additionally, the substrate support portion 120A supports the edge of the substrate 6A from its lower side. However, the substrate support portion 120A can also support the substrate by clamping the edge of the substrate 6A, or by adsorbing the substrate 6A using an electrostatic chuck or adhesive chuck. For example, the substrate support portion 120A can receive the substrate 6A from the transfer robot 320 in the substrate transfer chamber 32. Furthermore, the substrate support portion 120A can be raised and lowered by a lifting mechanism (not shown), allowing the substrate 6A received from the transfer robot 320 to overlap with the mask 7A supported on the mask stage 122A. The lifting mechanism can use known techniques such as a ball screw mechanism.

[0049] The mask stage 122A supports the mask 7A. An opening (not shown) is provided on the mask stage 122A, through which the film-forming material is dispersed onto the film-forming surface of the substrate 6A, which overlaps with the mask 7A. In addition, the mask stage 122A is supported in the chamber 10 by a support column 124A.

[0050] Alignment mechanism 126A performs alignment of substrate 6A and mask 7A. Alignment mechanism 126A aligns substrate 6A supported by substrate support 120A and mask 7A supported by mask stage 122A by adjusting the relative horizontal positions of substrate support 120A and mask stage 122A. Since the alignment of substrate 6A and mask 7A can be performed using known techniques, a detailed description is omitted. As an example, alignment mechanism 126A detects alignment marks formed on substrate 6A and mask 7A using a camera (not shown). Furthermore, alignment mechanism 126A adjusts the positional relationship between substrate 6A and mask 7A such that the relationship between the position of substrate 6A calculated from the marks formed on substrate 6A and the position of mask 7A calculated from the marks formed on mask 7A satisfies a predetermined condition.

[0051] When the alignment based on the alignment mechanism 126A is completed, the substrate support portion 120A aligns the supported substrate 6A onto the mask 7A. With the substrate 6A and the mask 7A aligned, the film deposition unit 14 performs film deposition on the substrate 6A.

[0052] The film deposition stage 12B can have the same structure as the film deposition stage 12A. That is, the film deposition stage 12B has a substrate support 120B, a mask stage 122B, a support column 124B, and an alignment mechanism 126B, which correspond to the substrate support 120A, the mask stage 122A, the support column 124A, and the alignment mechanism 126A, respectively.

[0053] Refer to together Figure 3 . Figure 3 This diagram illustrates the structure of the film-forming unit 14 and the release range of the film-forming material from the film-forming source 140. The release range of the film-forming material will be described later.

[0054] The film-forming unit 14 moves while releasing film-forming material to form a film on the substrate 6. In this embodiment, the film-forming unit 14 includes a film-forming source 140 and a moving part 142.

[0055] Film-forming source 140 releases film-forming material. In this embodiment, film-forming source 140 includes: a plurality of receiving portions 1401a to 1401c for receiving film-forming material; a plurality of discharging portions 1402a to 1402c respectively disposed in the plurality of receiving portions 1401a to 1401c for discharging evaporated film-forming material; and a delineating portion 1403 for delineating the discharging range of film-forming material.

[0056] The film-forming material contained in the housing sections 1401a to 1401c is heated and evaporated by a heater (not shown), and released from the discharge sections 1402a to 1402c into the internal space 101 of the chamber 10. In this embodiment, the plurality of housing sections 1401a to 1401c are arranged side by side in the moving direction (X direction) of the film-forming unit 14. For example, the plurality of housing sections 1401a to 1401c may also contain different film-forming materials. Thus, co-deposition of multiple film-forming materials onto the substrate 6 is possible. In addition, as the heater for heating the film-forming material contained in the housing sections 1401a to 1401c, a sheathed heater utilizing an electric heating wire can be used, for example. In addition, in this embodiment, the three housing sections 1401a to 1401c are arranged in the X direction, but the number of housing sections can be appropriately varied. For example, the number of housing sections may be one or two, or four or more.

[0057] The discharge sections 1402a to 1402c are cylindrical components through which the film-forming material evaporated within the receiving sections 1401a to 1401c can pass. The discharge sections 1402a to 1402c may also be openings formed on the upper surface of the receiving sections 1401a to 1401c. In this embodiment, multiple receiving sections 1401a are arranged in a direction intersecting the moving direction of the film-forming unit 14 (Y direction). The same applies to receiving sections 1401b and 1401c.

[0058] The delineation section 1403 delineates the discharge range of the film-forming material discharged from the discharge sections 1402a to 1402c. The delineation section 1403 includes a plurality of plate-shaped members 1403a to 1403d arranged from the positive side to the negative side in the X direction. Plate-shaped member 1403a is positioned closer to the positive side in the X direction than the discharge section 1402a. Plate-shaped member 1403b is positioned between the discharge sections 1402a and 1402b in the X direction. Plate-shaped member 1403c is positioned between the discharge sections 1402b and 1402c in the X direction. Plate-shaped member 1403d is positioned closer to the negative side in the X direction than the discharge section 1402c.

[0059] The moving part 142 moves the film-forming source 140. In this embodiment, the moving part 142 reciprocates the film-forming source 140 in the direction (X direction) in which the plurality of film-forming platforms 12A, 12B are arranged. The moving part 142 can use known techniques. In this embodiment, the moving part 142 includes a moving body 1421 that holds the film-forming source 140, a rolling element 1422 rotatably supported on the moving body 1421, and a linear guide (not shown) for a drive unit. That is, when the moving body 1421 is driven by a drive unit (not shown) such as a ball screw mechanism, it moves along a track 102 provided on the floor of the chamber 10 via the rolling element 1422. With this structure, the moving mechanism of the film-forming source 140 is established by a single axis, thus simplifying the mechanism within the chamber 10.

[0060] Baffle 16A blocks the film-forming material emitted from film-forming source 140 from scattering onto substrate 6A. Specifically, baffle 16A is disposed below film-forming stage 12A, blocking the scattering of film-forming material emitted from film-forming source 140, located further below it, onto substrate 6A on film-forming stage 12A. More specifically, baffle 16A is disposed below film-forming stage 12A and is positioned in the vertical direction (Z direction) closer to the film-forming surface of substrate 6A on film-forming stage 12A than the emission portion 1402 of film-forming source 140. Furthermore, baffle 16A is configured to be openable and closable via movable portion 18A. Since baffle 16B has the same structure as baffle 16A, description of baffle 16B is omitted. However, it will be described in detail later that the direction of movement of baffle 16B during opening and closing is opposite to that of baffle 16A.

[0061] The moving part 18A moves the baffle 16A to open and close the circuit. Here, the moving part 18A can slide the baffle 16A between the fully closed position PA1 and the fully open position PA2 (see reference). Figure 4 In this embodiment, the fully closed position PA1 is the position of the baffle 16A in which the entire substrate 6A is housed within the area surrounded by the outer edge of the baffle 16A when viewed from above. Furthermore, the fully open position PA2 is the position of the baffle 16A in which no part of the substrate 6A is housed within the area surrounded by the outer edge of the baffle 16A when viewed from above.

[0062] As for the moving part 18A, known technologies can be used, such as mechanisms that convert the rotary motion of a drive source like a motor into translational motion, such as rack and pinion mechanisms or electric cylinders. As an example, Figure 2 The diagram shows a structure in which a pinion 182A, rotated by a motor 181A, meshes with a rack (not shown) disposed on a baffle 16A, thereby allowing the baffle 16A to move along a guide 183A. The moving part 18B, like the moving part 18A, includes a motor 181B, a pinion 182B, a rack (not shown), and a guide 183B.

[0063] Since baffle 16B and moving part 18B have the same structure as baffle 16A and moving part 18A, their description is omitted. However, it will be described in detail later that the direction of movement of baffle 16B during opening and closing is opposite to that of baffle 16A.

[0064] The control unit 20 controls the operation of each component of the film-forming apparatus 1. For example, the control unit 20 can be configured to include a processor (such as a CPU), a memory such as RAM or ROM, and various interfaces. For example, the control unit 20 implements various processes of the film-forming apparatus 1 by reading a program stored in ROM into RAM and executing it. For example, the control unit 20 executes various processes such as film-forming processing according to instructions received from the host computer of the unified control film-forming system SY. Alternatively, the operation of each component of the film-forming apparatus 1 can be directly controlled by the host computer of the unified control film-forming system SY.

[0065] <Film formation range of the evaporation source>

[0066] Reference Figure 3 The release range of the film-forming material of the film-forming source 140 is explained. Figure 3 The discharge range R1 of the film-forming material from the film-forming source 140 in the moving direction (X direction) of the film-forming unit 14 is indicated. In this embodiment, the discharge range R1 is determined based on the positional relationship between the discharge portions 1402a to 1402c of the film-forming source 140 and the plate-shaped members 1403a and 1403d of the delineation portion 1403.

[0067] Specifically, the range between the imaginary straight line VL1 passing through the end portion of the discharge section 1402a and the upper end portion of the plate-shaped member 1403a, and the imaginary straight line VL2 passing through the end portion of the discharge section 1402c and the upper end portion of the plate-shaped member 1403d, is called the discharge range R1. Additionally, there may be film-forming material that splashes outside the geometrically defined discharge range R1, but here the geometrically defined range is defined as the discharge range R1.

[0068] <Action Example>

[0069] Figure 4 and Figure 5This is an explanatory diagram of the film deposition process of the film deposition apparatus 1. In this embodiment, the film deposition unit 14 performs film deposition on the substrate while reciprocating in the X direction below the film deposition stage 12A and the film deposition stage 12B. Furthermore, the film deposition unit 14 performs film deposition on each substrate by reciprocating once in the X direction below each substrate. In other words, the film deposition unit 14 performs film deposition once while moving towards the positive side of the X direction and once while moving towards the negative side of the X direction for each substrate, performing a total of two film depositions while moving. Hereinafter, the first film deposition on each substrate will sometimes be described as film deposition in the outgoing direction, and the second film deposition will sometimes be described as film deposition in the returning direction. Additionally, in this embodiment, as described later, the directions of movement of the film deposition unit 14 are opposite for the outgoing direction film deposition on substrate 6A and for the outgoing direction film deposition on substrate 6B. The same applies to the returning direction.

[0070] exist Figure 4 and Figure 5 In this process, the film-forming unit 14 moves from position POS1 at the negative end in the X direction to position POS2 at the positive end, then turns back and moves again to position POS2. During this period, the film-forming unit 14 sequentially performs film formation on the first substrate 6B in the return direction, film formation on the substrate 6A in the going direction, film formation on the substrate 6A in the return direction, and film formation on the second substrate 6B in the going direction. That is, Figure 4 State ST1 is the state after the first substrate 6B has been coated in the directional direction.

[0071] State ST1 is the position POS1 of the end of the film deposition unit 14 located on the negative side of the X direction. At this time, the baffle 16B corresponding to the film deposition stage 12B is in the fully open position PB2, and the baffle 16A corresponding to the film deposition stage 12A is in the fully closed position PA1. In addition, on the film deposition stage 12A, it is possible to perform operations such as changing the substrate that has finished film deposition to the substrate to be film deposition next, and aligning the newly brought in substrate.

[0072] State ST2 is the state in which the film deposition unit 14 moves in the positive X direction while depositing film on the first substrate 6B of the film deposition stage 12B in the return direction. At this time, the moving part 18B moves the baffle 16B in the positive X direction behind the traveling direction of the film deposition unit 14 so as not to interfere with the emission range R1 of the film deposition source 140. In addition, the baffle 16A is still in the fully closed position PA1.

[0073] State ST3 is a state in which the film-forming unit 14 performs film formation on the substrate 6A of the film-forming stage 12A in the heading direction while moving towards the positive X direction. In state ST3, with a portion of the substrate 6A covered by the baffle 16A, the film-forming unit 14 performs film formation on the portion of the substrate 6A not covered by the baffle 16A. At this time, the moving unit 18A moves the baffle 16A from the fully closed position PA1 towards the fully open position PA2 towards the positive X direction. In this embodiment, the moving unit 18A moves the baffle 16A while maintaining the relative positional relationship between the film-forming stage 12A and the baffle 16A in the X direction. In other words, during the period when the moving unit 18A moves the baffle 16A from the fully closed position PA1 to the fully open position PA2, the baffle 16A moves at the same speed as the film-forming unit 14 for at least a portion of the interval.

[0074] Here, the moment when the moving part 18A begins to move the baffle 16A can be determined by the positional relationship between the discharge range R1 and the baffle 16A in the X direction. For example, the moving part 18A can also begin to move the baffle 16A based on the distance from the discharge range R1 to the film-forming stage 12A. Specifically, at the height of the baffle 16A, when the end of the baffle 16A in the fully closed position PA1 on the film-forming stage 12B side (negative side in the X direction) is at a predetermined distance from the discharge range R1, the moving part 18A can also start to move the baffle 16A. This predetermined distance can be, for example, a value between 0 mm and 200 mm. Furthermore, for example, the predetermined distance can also be a value of one-nth of the length of the substrate 6B in the X direction (for example, n is 4 or more).

[0075] Alternatively, the relative positional relationship between the baffle 16A and the film-forming unit 14 during the movement of the baffle 16A can also be that the baffle 16A and the film-forming unit 14 are separated by the aforementioned specified distance in the X direction. Or, considering the time it takes for the baffle 16A to reach the same speed as the film-forming unit 14, the positional relationship can also be that the baffle 16A and the film-forming unit 14 are separated by a distance shorter than the aforementioned specified distance in the X direction.

[0076] During the transition from state ST2 to state ST3, film deposition on substrate 6A can begin either after film deposition on substrate 6B is completed, or before film deposition on substrate 6A is completed. For example, film deposition on the positive X-direction end of substrate 6B and film deposition on the negative X-direction end of substrate 6A can be performed simultaneously. From another perspective, there may also be a period during which baffles 16A and 16B move simultaneously towards the positive X-direction.

[0077] In this embodiment, the moving part 18A moves in conjunction with the movement of the film-forming unit 14 in the X-direction positive direction, moving the baffle 16A from the fully closed position PA1 to the fully open position PA2. Furthermore, during the film formation process on the substrate 6A via the film-forming unit 14, a portion of the substrate 6A is covered by the baffle 16A. That is, film formation on the substrate 6A does not begin after the baffle 16A is in the fully open position PA2, but rather occurs in parallel with the opening of the baffle 16A. Therefore, the time it takes for the baffle 16A to open and expose the substrate 6A before film formation on the substrate 6A begins can be reduced. This allows for a longer period of alignment time for the substrate 6A when the baffle 16A is closed. Additionally, it prevents film-forming material that has spilled outside the discharge range R1 from accidentally adhering to the substrate 6A. Therefore, defects caused by incomplete alignment and defects caused by accidental adhesion of film-forming material can be suppressed.

[0078] Furthermore, regarding alignment, it is also possible to perform the alignment with baffle 16A open. However, if alignment is performed with baffle 16A open, the film-forming material may unnecessarily spread to the back side of mask 7A. Additionally, there is a possibility that film-forming material may adhere to substrates where the mask is not aligned, or to the mechanism portion of alignment mechanism 126A or substrate support portion 120A. Such phenomena can also lead to misalignment or poor film formation. In this embodiment, by ensuring a longer alignment time with baffle 16A closed, a more appropriate alignment time can be ensured. Here, it is preferable to begin substrate replacement with baffle 16A closed.

[0079] Furthermore, in this embodiment, the moving part 18A moves the baffle 16A while maintaining the relative positional relationship between the baffle 16A and the film-forming unit 14. Therefore, the distance between the discharge range R1 and the baffle 16A can be maintained. That is, it is possible to prevent the baffle 16A from interfering with the discharge range R1 or the distance between the discharge range R1 and the baffle 16A from becoming excessively wide during film formation in the film-forming unit 14.

[0080] Since the deposition of the first substrate 6B has been completed, substrate replacement and alignment of the newly input substrate are performed on the deposition stage 12B between states ST3 and ST5. That is, after the first substrate 6B is removed from the deposition stage 12B, the second substrate 6B is moved into the deposition stage 12B. Then, the alignment mechanism 126B aligns the substrate 6B and the mask 7B.

[0081] State ST4 is the state where the film deposition unit 14 reaches position POS2 at the end on the positive side of the X direction. That is, state ST4 is the state where film deposition on the substrate 6A in the direction of travel has ended. Baffle 16A is in the fully open position PA2. In addition, baffle 16B is in the fully closed position PB1. On the film deposition stage 12B, substrate 6B can be replaced and aligned.

[0082] State ST5 is a state in which the film-forming unit 14 moves towards the negative X direction while performing film formation on the substrate 6A of the film-forming stage 12A in the return direction. At this time, the moving part 18A moves the baffle 16A from the fully open position PA2 towards the fully closed position PA1 towards the negative X direction. Furthermore, the moving part 18A moves the baffle 16A behind the traveling direction of the film-forming unit 14 towards the negative X direction to prevent it from interfering with the emission range R1 of the film-forming source 140. Meanwhile, the baffle 16B remains in the fully closed position PB1. Additionally, the replacement and alignment of the substrate 6B in the film-forming stage 12B are completed before the emission range R1 of the film-forming unit 14 reaches the film-forming stage 12B. In other words, the replacement and alignment of the substrate 6B on the film-forming stage 12B are completed before the moving part 18B begins to move the baffle 16B from the fully closed position PB1 to the fully open position PB2 to perform film formation on the substrate 6B.

[0083] As described above, in this embodiment, the alignment of the second substrate 6B and the mask 7B based on the alignment mechanism 126B begins during the film deposition of the substrate 6A based on the film deposition unit 14, and is completed before the moving part 18B begins to move the baffle 16B from the fully closed position PB1 to the negative side in the X direction. Therefore, since the film deposition time of the substrate 6A can be separated during the alignment time of the substrate 6B, the film deposition process can be performed efficiently.

[0084] State ST6 is the state in which the film deposition unit 14 moves in the negative X direction while depositing film on the second substrate 6B of the film deposition stage 12B in the heading direction. At this time, the moving part 18B moves the baffle 16B from the fully closed position PB1 to the fully open position PB2 in the negative X direction. In addition, the baffle 16A is located in the fully closed position PA1. Moreover, since the film deposition on the substrate 6A has been completed, the replacement of the substrate and the alignment of the newly brought-in substrate begin on the film deposition stage 12A.

[0085] As described above, in this embodiment, not only in the film formation on substrate 6A but also on substrate 6B, in the film formation based on film formation unit 14, a portion of substrate 6B is covered by baffle 16B. Therefore, when multiple film formation stages 12A and 12B are provided in chamber 10, the occurrence of defects in the film formation process can be suppressed.

[0086] Furthermore, if we observe states ST4 to ST6 from another perspective, during the movement of the film-forming unit 14 from position POS2 to position POS1, the moving part 18A first moves the baffle 16A from the fully open position PA2 to the fully closed position PA1. Then, according to the discharge range R1 reaching the film-forming stage 12B, the moving part 18B moves the baffle 16B from the fully closed position PB1 to the fully open position PB2. In this way, the multiple baffles 16A and 16B move in conjunction with the movement of the film-forming unit 14 in one direction.

[0087] As a specific example of the moment when the moving part 18B begins to move the baffle 16B, an example can be given where, at the height of the baffle 16B, the end of the baffle 16B in the fully closed position PB1 on the film-forming stage 12A side (positive side in the X direction) is at a predetermined distance from the discharge range R1. This predetermined distance can be, for example, a value between 0 mm and 200 mm. Furthermore, for example, the predetermined distance can be a value that is one-nth of the length of the substrate 6B in the X direction (for example, n is 4 or more).

[0088] After state ST6, return to state ST1. Then, film is deposited on the substrates sequentially in the return direction of the second substrate 6B and the going direction of the second substrate 6A.

[0089] As explained above, according to this embodiment, the movement of the moving part 18A is linked to the movement of the film-forming unit 14, causing the baffle 16A to move from the fully closed position PA1 to the fully open position PA2. During the film-forming process of the film-forming unit 14 on the substrate 6A, a portion of the substrate 6A is covered by the baffle 16A. Therefore, before the film-forming process on the substrate 6A begins, the time for the baffle 16A to open and expose the substrate 6A can be reduced, and film-forming can be performed using a film-forming method that is less prone to manufacturing defects.

[0090] In this embodiment, two film-forming stages 12A and 12B are provided in the chamber 10, but a single film-forming stage can also be used. In this case, the substrate exposure time can be reduced compared to the case where the film-forming unit begins film formation on the substrate after the baffle is moved to the fully open position. Therefore, accidental adhesion of the film-forming material to the substrate can be suppressed. In addition, compared to the case where the film-forming unit begins film formation on the substrate after the baffle is moved to the fully open position, the waiting time for the baffle to open and close is shortened, thus improving the utilization efficiency of the film-forming material.

[0091] In this embodiment, the film-forming unit 14 forms a film on the substrate by reciprocating once under each substrate. However, it may also form a film only in the forward direction, or a film formed by reciprocating once and a half times. Furthermore, for example, in the case of two reciprocations, the baffle 16A may be moved in conjunction with the movement of the film-forming unit 14 only during the first reciprocating forward direction and the second reciprocating return direction. Alternatively, the baffle 16A may be moved in conjunction with the movement of the film-forming unit 14 during the first reciprocating return direction and the second reciprocating forward direction.

[0092] <Manufacturing Methods of Electronic Devices>

[0093] Next, an example of a manufacturing method for an electronic device will be described. Hereinafter, as an example of an electronic device, the structure and manufacturing method of an organic EL display device will be illustrated. In this example, multiple [devices / fabrication points] are installed on the production line. Figure 1 The illustrated film-forming system SY.

[0094] First, the manufactured organic EL display device will be explained. Figure 6 (A) is an overall view of the organic EL display device 50. Figure 6 (B) is a diagram showing the cross-sectional structure of 1 pixel.

[0095] like Figure 6 As shown in (A), in the display area 51 of the organic EL display device 50, a plurality of pixels 52, each having a plurality of light-emitting elements, are arranged in a matrix. Each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes, which will be described in detail later.

[0096] Furthermore, the term "pixel" here refers to the smallest unit capable of displaying a desired color within the display area 51. In the case of a color organic EL display device, pixel 52 is composed of a combination of multiple sub-pixels, including a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit different light from each other. Pixel 52 is typically composed of a combination of three types of sub-pixels: red (R) light-emitting elements, green (G) light-emitting elements, and blue (B) light-emitting elements, but the present invention is not limited thereto. Pixel 52 may include at least one type of sub-pixel, preferably two or more, and more preferably three or more. For example, the sub-pixels constituting pixel 52 may also be a combination of four types of sub-pixels: red (R) light-emitting elements, green (G) light-emitting elements, blue (B) light-emitting elements, and yellow (Y) light-emitting elements.

[0097] Figure 6 (B) is Figure 6(A) is a partial cross-sectional view of line AB. Pixel 52 has multiple sub-pixels, which are composed of an organic EL element having a first electrode (anode) 54, a hole transport layer 55, a red layer 56R, a green layer 56G, a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. The hole transport layer 55, red layer 56R, green layer 56G, blue layer 56B, and electron transport layer 57 are equivalent to organic layers. The red layer 56R, green layer 56G, and blue layer 56B are respectively formed into patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue light, respectively.

[0098] Furthermore, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 can be formed together on multiple light-emitting elements 52R, 52G, and 52B, or they can be formed separately for each light-emitting element. That is, they can also be formed as follows: Figure 6 As shown in (B), the hole transport layer 55 is formed as a common layer in multiple sub-pixel regions. On top of this, the red layer 56R, the green layer 56G, and the blue layer 56B are formed separately in each sub-pixel region. On top of this, the electron transport layer 57 and the second electrode 58 are formed as a common layer in multiple sub-pixel regions.

[0099] In addition, to prevent short circuits between the adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer can deteriorate due to moisture or oxygen, a protective layer 60 is provided to protect the organic EL element from the effects of moisture or oxygen.

[0100] exist Figure 6 In (B), the hole transport layer 55 and the electron transport layer 57 are represented by a single layer, but depending on the structure of the organic EL display element, they can also be formed by multiple layers having a hole blocking layer and an electron blocking layer. Additionally, a hole injection layer with a band structure can be formed between the first electrode 54 and the hole transport layer 55 to allow holes to be smoothly injected from the first electrode 54 into the hole transport layer 55. Similarly, an electron injection layer can be formed between the second electrode 58 and the electron transport layer 57.

[0101] The red layer 56R, green layer 56G, and blue layer 56B can each be formed from a single emitting layer, or they can be formed by stacking multiple layers. For example, the red layer 56R can be composed of two layers, with the red emitting layer forming the upper layer and the hole transport layer or electron blocking layer forming the lower layer. Alternatively, the red emitting layer can form the lower layer, and the electron transport layer or hole blocking layer can form the upper layer. By setting layers on the lower or upper side of the emitting layer in this way, the color purity of the light-emitting element can be improved by adjusting the emitting position and the optical path length within the emitting layer.

[0102] Furthermore, while an example of red layer 56R is shown here, green layer 56G and blue layer 56B can also employ the same structure. Additionally, the number of layers can be two or more. Moreover, layers of different materials, such as light-emitting layers and electron-blocking layers, can be stacked, or layers of the same material, such as two or more light-emitting layers, can be stacked.

[0103] Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, we assume that the red layer 56R is composed of two layers, a lower layer 56R1 and an upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

[0104] First, a substrate 53 is prepared, which has a circuit (not shown) for driving an organic EL display device and a first electrode 54. Furthermore, the material of the substrate 53 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate with a polyimide film laminated on a glass substrate is used as the substrate 53.

[0105] On the substrate 53 where the first electrode 54 is formed, a resin layer such as acrylic or polyimide is applied by rod coating or spin coating. The resin layer is patterned by photolithography to form an opening in the portion where the first electrode 54 is formed, thereby forming an insulating layer 59. This opening corresponds to the light-emitting area where the light-emitting element actually emits light. In this embodiment, a large substrate is processed until the insulating layer 59 is formed. After the insulating layer 59 is formed, a substrate slitting process is performed to divide the substrate 53.

[0106] A substrate 53 with an insulating layer 59 patterned on it is fed into a first film-forming apparatus 1, and a hole transport layer 55 is formed as a shared layer on the first electrode 54 of the display area. The hole transport layer 55 is formed in each display area 51 of the panel portion of the final organic EL display device using a mask with openings.

[0107] Next, the substrate 53, on which the hole transport layer 55 is formed, is moved into the second film deposition apparatus 1. Alignment is performed between the substrate 53 and the mask, and the substrate is placed on the mask. A red layer 56R is formed on the portion of the hole transport layer 55 where the red-emitting elements of the substrate 53 are disposed (the area where red sub-pixels are formed). Here, the mask used in the second film deposition chamber is a high-precision mask with openings formed only in multiple regions on the substrate 53 that become red sub-pixels, which are sub-pixels of the organic EL display device. Therefore, the red layer 56R, including the red emitting layer, is formed only in the red sub-pixel regions of the multiple sub-pixels on the substrate 53. In other words, the red layer 56R is selectively formed in the red sub-pixel regions, rather than in the blue and green sub-pixel regions of the multiple sub-pixels on the substrate 53.

[0108] Similar to the deposition of the red layer 56R, the green layer 56G is deposited in the third film deposition apparatus 1, and then the blue layer 56B is deposited in the fourth film deposition apparatus 1. After the deposition of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is deposited over the entire display area 51 in the fifth film deposition apparatus 1. The electron transport layer 57 is formed as a common layer on the three color layers 56R, 56G, and 56B.

[0109] The substrate with the electron transport layer 57 formed is moved to the sixth film deposition apparatus 1 to form the second electrode 58. In this embodiment, each layer is formed by vacuum evaporation in the first to sixth film deposition apparatus 1. However, the present invention is not limited to this; for example, the second electrode 58 in the sixth film deposition apparatus 1 can also be formed by sputtering. Then, the substrate with the second electrode 58 formed is moved to a sealing device, and the organic EL display device 50 is completed by plasma CVD forming a protective layer 60 (sealing process). In addition, although the protective layer 60 is formed by CVD, it is not limited to this; it can also be formed by ALD or inkjet methods.

Claims

1. A film-forming apparatus, characterized in that, The film-forming device has the following features: The film forming unit includes a film forming source that emits film forming material, and performs film forming on a substrate that is aligned with and coincides with the mask while reciprocating in a moving direction; A first film-forming stage is used to form a film on a first substrate, which has been aligned with a first mask by a first alignment mechanism. The second film-forming stage is arranged side-by-side with the first film-forming stage on the second side opposite to the first side of the moving direction of the film-forming unit, and forms a film on the second substrate, which is the substrate and has been aligned with the second mask by the second alignment mechanism. The first baffle blocks the film-forming material emitted from the film-forming source from scattering toward the first substrate; The second baffle blocks the film-forming material emitted from the film-forming source from scattering toward the second substrate; as well as The movable component causes the first baffle to open and close between a first fully closed position and a first fully open position, and also causes the second baffle to open and close between a second fully closed position and a second fully open position. The moving component performs a first action, which, in conjunction with the movement of the film-forming unit towards the first side, causes the second baffle to move from the second fully open position to the second fully closed position towards the first side, so that the second baffle does not interfere with the release range of the film-forming material from the film-forming source, and causes the first baffle to move from the first fully closed position to the first fully open position towards the first side. In the first operation, during the film formation process on the first substrate by the film formation unit, the second substrate is covered by the second baffle, and the portion of the first substrate on the side where the second film formation stage is located is open while the portion on the opposite side is covered by the first baffle.

2. The film-forming apparatus according to claim 1, characterized in that, The moving component performs a second action, which, in conjunction with the movement of the film-forming unit toward the second side, causes the first baffle to move from the first fully open position to the first fully closed position toward the second side, and causes the second baffle to move from the second fully closed position to the second fully open position toward the second side. In the second operation, during the film formation process on the second substrate performed by the film formation unit, the first substrate is covered by the first baffle, and the portion of the second substrate on the side where the first film formation stage is located is open while the portion on the opposite side is covered by the second baffle.

3. The film-forming apparatus according to claim 2, characterized in that, After forming a film on the first substrate while moving towards the first side, the film-forming unit then forms films on the first substrate and the second substrate sequentially while moving towards the second side. The moving component, in conjunction with the movement of the film-forming unit toward the second side, causes the first baffle to move from the first fully open position to the first fully closed position toward the second side. Depending on the release range of the film-forming material from the film-forming source of the film-forming unit moving toward the second side reaches the second film-forming stage, the second baffle is moved from the second fully closed position to the second fully open position toward the second side.

4. The film-forming apparatus according to claim 2, characterized in that, The moving component moves the second baffle toward the second side at a predetermined distance between the end of the second baffle on the first film-forming stage side in the second fully closed position and the discharge range of the film-forming material from the film-forming source.

5. The film-forming apparatus according to claim 1, characterized in that, The alignment of the second substrate and the second mask by the second alignment mechanism begins in the film formation of the first substrate by the film formation unit and is completed before the moving member moves the second baffle from the second fully closed position to the second side.

6. A film-forming method, characterized in that, The film-forming method includes: The process includes a film-forming source that emits film-forming material and reciprocates in a moving direction, wherein a film-forming unit performs film formation on a first substrate using a first mask while moving towards a first side of the moving direction, and performs film formation on a second substrate using a second mask while moving towards the first side of the moving direction. The first substrate is aligned with and coincides with the first mask using a first alignment mechanism of a first film-forming stage, and the second substrate is aligned with and coincides with the second mask using a second alignment mechanism of a second film-forming stage. The second film-forming stage and the first film-forming stage are arranged side-by-side on a second side opposite to the first side of the moving direction of the film-forming unit. In the process of performing the first action, the first action is linked to the movement of the film-forming unit toward the first side, causing the second baffle, which blocks the film-forming material emitted from the film-forming source from scattering toward the second substrate, to move from a second fully open position to a second fully closed position toward the first side, so that the second baffle does not interfere with the emission range of the film-forming material from the film-forming source, and causing the first baffle, which blocks the film-forming material emitted from the film-forming source from scattering toward the first substrate, to move from a first fully closed position to a first fully open position toward the first side. In the first operation, during the film formation process on the first substrate by the film formation unit, the second substrate is covered by the second baffle, and the portion of the first substrate on the side where the second film formation stage is located is open while the portion on the opposite side is covered by the first baffle.

7. A method for manufacturing an electronic device, characterized in that, The manufacturing method of the electronic device includes a film-forming process, wherein the film-forming process forms a film on a substrate using the film-forming method described in claim 6.

Images