A power chip electrical performance testing device and batch testing device

Abstract

The application discloses a kind of power chip electrical performance testing device, comprising: device base, including base shell, collector metal structure and collector terminal;Pressing electrode, including pressing electrode shell, emitter terminal is equipped on the pressing electrode shell, emitter metal structure is equipped in the bottom of pressing electrode shell;The side of pressing electrode shell is equipped with gate terminal and grid stylus;Transmission cavity and button, pressing electrode shell is assembled in transmission cavity by pressure spring, transmission cavity is equipped with transmission gear, one side of transmission gear is engaged with button, and the other side is engaged with pressing electrode shell, transmission cavity bottom is connected with device base by rotating assembly, press button, pressing electrode is lifted while transmission cavity moves down, the transmission cavity is supported by rotating assembly, and the pressing and translation button rotate the pressing electrode to test station or waiting station.The present application can guarantee the crimping connection of power chip electrode, ensure the consistency of connection interface pressure, and improve the test efficiency.

Description

Technical Field

[0001] This invention relates to a power chip electrical performance testing device and a batch testing device, belonging to the field of power semiconductor device technology. Background Technology

[0002] Existing technologies package chips into sub-units, sub-modules, or modules, and use interconnect structures within the package to bring out the chip's electrode signals, enabling the chip under test to be connected to electrical characteristic testing equipment, such as for dynamic and static characteristic testing. This method not only adds extra packaging costs to chip testing, but the additional packaging also introduces extra parasitic resistance and inductance into the device under test, preventing the test results from accurately reflecting the characteristics of the bare chip. Furthermore, chips of different voltage and power levels vary in size. Although this difference is only on the millimeter level, it requires the redevelopment of packaging processes and materials, significantly increasing the difficulty of test development.

[0003] Currently, there are relatively mature probe stations for chip testing, but due to insufficient automation and testing precision in China, there are currently no domestically produced probe stations specifically designed for chip-level testing. Using imported equipment not only increases costs, but foreign equipment is also difficult to customize for domestic testing needs. Whether for new testing requirements or new chip products, imported probe stations exhibit significant delays in adjusting testing protocols and cannot control costs and complexity.

[0004] In addition, existing technologies also offer chip testing solutions based on the principles of clamps and clips, combined with chip-limiting structures. However, these solutions are either designed for large-size thyristor chips (3-5 inches), or fail to meet the requirements for uniform contact conditions during chip testing, or fail to ensure convenience for batch chip testing. The clamping process for a single chip is extremely cumbersome, resulting in very low testing efficiency. Summary of the Invention

[0005] The purpose of this invention is to overcome the shortcomings of the prior art and provide a power chip electrical performance testing device and a batch testing device that can ensure the pressure connection of power chip electrodes without packaging, guarantee the consistency of connection interface pressure, and improve testing efficiency. To achieve the above objective, this invention is implemented using the following technical solution:

[0006] In a first aspect, the present invention provides a power chip electrical performance testing device, comprising:

[0007] The device base includes a base housing, on which a limiting groove for fixing a chip is provided, and a collector metal structure is provided at the bottom of the limiting groove. A collector terminal is provided at the bottom of the base housing, and the top of the collector terminal penetrates through the base housing and is connected to the collector metal structure. The collector metal structure is used to directly contact the collector of the chip to extract signals.

[0008] A press-fit electrode includes a press-fit electrode housing, an emitter terminal is provided on the top of the press-fit electrode housing, and an emitter metal structure is provided at the bottom of the press-fit electrode housing. The emitter terminal passes through the press-fit electrode housing and connects to the emitter metal structure. The emitter metal structure is used to directly contact the emitter of the chip to extract a signal. A gate terminal and a gate pin are provided on the side of the press-fit electrode housing. The gate pin passes through the gate terminal and is used to directly contact the gate of the chip to introduce a gate signal.

[0009] The device includes a transmission cavity and a button. The press-fit electrode shell is assembled in the transmission cavity by a pressure spring. The transmission cavity is equipped with a transmission gear. One side of the transmission gear meshes with the button, and the other side meshes with the press-fit electrode shell. The bottom of the transmission cavity is connected to the device base through a rotating assembly. When the button is pressed, the press-fit electrode is raised while the transmission cavity moves downward. The transmission cavity is supported by the rotating assembly and suspended relative to the device base. Pressing and translating the button rotates the press-fit electrode to the testing position or the waiting position.

[0010] In conjunction with the first aspect, optionally, the device base has a through hole in the middle and a base cover at the bottom of the through hole. The rotating component includes a support spring, which is disposed in the through hole, with one end connected to the bottom of the transmission cavity and the other end connected to the base cover.

[0011] In conjunction with the first aspect, optionally, the rotating assembly further includes a blocking structure for limiting the rotation angle of the press-fit electrode to a range of 0°-90°.

[0012] In conjunction with the first aspect, optionally, the support spring is an irregularly shaped spring used to limit the rotation angle of the press-fit electrode to a range of 0°-90°.

[0013] In conjunction with the first aspect, optionally, the end of the press-fit electrode shell is provided with a track beam and a spring positioning beam, the inner wall of the transmission cavity is provided with a limiting track, the track beam is assembled on the limiting track to ensure that the press-fit electrode does not tilt during the lifting and releasing process, and the spring positioning beam is used to cooperate with the pressure spring to ensure the pressing pressure of the press-fit electrode.

[0014] In conjunction with the first aspect, optionally, the end of the press-fit electrode housing is further provided with a press-fit electrode transmission mechanism, which is used to mesh with the transmission gear.

[0015] In conjunction with the first aspect, optionally, the gate pin is provided with a gate spring, the extension and retraction of which is controllable to ensure reliable contact between the gate pin and the chip gate.

[0016] In conjunction with the first aspect, optionally, the transmission cavity has a transmission cavity wall hole in the middle, and the transmission gear is fixed in the transmission cavity wall hole by a gear shaft.

[0017] In conjunction with the first aspect, optionally, the button engages with the transmission gear via a button transmission mechanism.

[0018] In a second aspect, the present invention provides a batch testing device for the electrical performance of power chips, including a plurality of power chip electrical performance testing devices described in the first aspect.

[0019] Compared with the prior art, the beneficial effects achieved by the power chip electrical performance testing device and batch testing device provided in the embodiments of the present invention include:

[0020] This invention includes a device base, comprising a base housing, a limiting groove for fixing a chip, a collector metal structure at the bottom of the limiting groove, a collector terminal at the bottom of the base housing, and a collector terminal whose top penetrates the base housing and connects to the collector metal structure. The collector metal structure is used to directly contact the chip collector to extract a signal. A press-fit electrode includes a press-fit electrode shell, an emitter terminal at the top of the press-fit electrode shell, and an emitter metal structure at the bottom of the press-fit electrode shell. The emitter terminal penetrates the press-fit electrode shell and connects to the emitter metal structure, which is used to directly contact the chip emitter to extract a signal. A gate terminal and a gate pin are provided on the side of the press-fit electrode shell. The gate pin penetrates the gate terminal and is used to directly contact the chip gate to introduce a gate signal. This invention can ensure press-fit connection of power chip electrodes without packaging and can guarantee consistent pressure at the connection interface.

[0021] This invention includes a transmission cavity and a button. The press-fit electrode shell is assembled in the transmission cavity by a pressure spring. A transmission gear is provided in the transmission cavity. One side of the transmission gear meshes with the button, and the other side meshes with the press-fit electrode shell. The bottom of the transmission cavity is connected to the device base through a rotating assembly. When the button is pressed, the press-fit electrode rises while the transmission cavity moves downward. The transmission cavity is supported by the rotating assembly and suspended relative to the device base. Pressing and translating the button rotates the press-fit electrode to the testing position or the waiting position. This invention can achieve sufficient pressure on the chip, and the actual pressure on the chip is not affected by the chip thickness deviation, and it does not require additional pressure monitoring probes and instruments.

[0022] This invention, through a pressure spring and a transmission mechanism between the button and the pressing electrode, enables one-button pressure release and application to the power chip, simultaneously raising and lowering the pressing electrode, and removing the pressing electrode by rotation; thus, it facilitates the removal of the power chip. This invention not only utilizes the pressing and packaging structure to achieve electrical characteristic testing of bare chips, but also greatly improves chip testing efficiency and enables batch testing of bare chips.

[0023] Unlike imported fully automated probe stations for chip electrical testing, this invention offers flexible wiring, easily adjustable workstation and electrode dimensions, and eliminates the need to rewrite automation programs and process parameters, facilitating manual testing in the later stages of R&D. Its convenient chip replacement operation and batch workstation topology meet the capacity requirements for power chip batch testing. This not only controls test development costs but also satisfies the flexibility needs of new product development and testing. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of a power chip electrical performance testing device provided in Embodiment 1 of the present invention;

[0025] Figure 2 This is an exploded view of a power chip electrical performance testing device provided in Embodiment 1 of the present invention;

[0026] Figure 3 This is a cross-sectional view of a power chip electrical performance testing device provided in Embodiment 1 of the present invention;

[0027] Figure 4 This is an exploded view of the press-fit electrode in a power chip electrical performance testing device provided in Embodiment 1 of the present invention;

[0028] Figure 5 This is a diagram illustrating the usage steps of a power chip electrical performance testing device provided in Embodiment 1 of the present invention.

[0029] In the picture:

[0030] 1. Press-fit electrode; 1-1. Press-fit electrode housing; 1-1-1. Track beam; 1-1-2. Spring positioning beam; 1-1-3. Press-fit electrode transmission mechanism; 1-2. Emitter terminal; 1-3. Emitter metal structure; 1-4. Gate spring; 1-5. Gate terminal; 1-6. Gate pin;

[0031] 2. Device base; 2-1. Base housing; 2-2. Collector metal structure; 2-3. Collector terminal; 2-4. Base bottom cover;

[0032] 3. Transmission cavity; 3-1. Transmission cavity wall hole; 3-2. Limiting track;

[0033] 4. Buttons; 4-1. Button transmission mechanism;

[0034] 5. Support spring; 6. Chip; 7. Transmission gear; 8. Gear shaft; 9. Compression spring. Implementation

[0035] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and should not be used to limit the scope of protection of the present invention. Example 1

[0036] like Figure 1 , Figure 2 , Figure 3 As shown, this embodiment of the invention provides a power chip electrical performance testing device, including: a pressure electrode 1, a device base 2, a transmission cavity 3, a button 4, a support spring 5, a chip 6, a transmission gear 7, a gear shaft 8, and a pressure spring 9.

[0037] like Figure 4 As shown, the press-fit electrode 1 includes: a press-fit electrode shell 1-1, a track beam 1-1-1, a spring positioning beam 1-1-2, a press-fit electrode transmission mechanism 1-1-3, an emitter terminal 1-2, an emitter metal structure 1-3, a gate spring 1-4, a gate terminal 1-5, and a gate pin 1-6.

[0038] like Figure 3 , Figure 4 As shown, the emitter terminal 1-2 is located above the press-fit electrode housing 1-1, and the emitter metal structure 1-3 is located at the bottom of the press-fit electrode housing 1-1. The emitter terminal 1-2 passes through the press-fit electrode housing 1-1 and is connected to the emitter metal structure 1-3. The emitter metal structure 1-3 is used to directly contact the emitter of the chip 6 to extract the signal.

[0039] like Figure 4 As shown, gate terminal 1-5 is located on the side of press-fit electrode housing 1-1, and gate pin 1-6 passes through gate terminal 1-5. Gate pin 1-6 is used to directly contact the chip gate of chip 6 to introduce gate signal. Gate pin 1-6 is provided with gate spring 1-4, and the extension and retraction of gate spring 1-4 is controllable to ensure reliable contact between gate pin 1-6 and chip gate.

[0040] like Figure 2As shown, the device base 2 includes a base housing 2-1, a collector metal structure 2-2, a collector terminal 2-3, and a base cover 2-4. The base housing 2-1 has a limiting groove for fixing the chip 6, allowing the chip 6 to be accurately placed on the testing station. The collector metal structure 2-2 is located at the bottom of the limiting groove, and the collector terminal 2-3 is located at the bottom of the base housing 2-1. The top of the collector terminal 2-3 penetrates the base housing 2-1 and connects to the collector metal structure 2-2. The collector metal structure 2-2 is used to directly contact the collector of the chip 6 to extract signals.

[0041] The emitter metal structure 1-3 and the collector metal structure 2-2, which are in direct contact with chip 6, need to match the coefficient of thermal expansion of chip 6, and are preferably made of metal materials such as copper, molybdenum, and silver. The remaining structures are made of metal materials with high electrical conductivity, such as aluminum and copper.

[0042] like Figure 3 As shown, the press-fit electrode housing 1-1 is assembled in the transmission cavity 3 by a pressure spring 9. After the press-fit electrode 1 is lowered, the press-fit electrode 1 is pressed by the pressure spring 9, realizing the press-fit contact between the chip 6 and the emitter metal structure 1-3 and the collector metal structure 2-2. The material of the pressure spring 9 must have sufficient rigidity to ensure the pressure of the press-fit electrode.

[0043] The transmission cavity 3 includes a transmission cavity wall hole 3-1 and a limiting track 3-2. For example... Figure 3 As shown, the track beam 1-1-1 and the spring positioning beam 1-1-2 are located at the end of the press-fit electrode housing 1-1 where the gate terminal 1-5 is not located, and the press-fit electrode transmission mechanism 1-1-3 is located on the side of this end. The track beam 1-1-1 is mounted on the limiting track 3-2 to ensure that the press-fit electrode 1 does not tilt during lifting and releasing, and to ensure the consistency of the pressure applied to the surface of the chip 6. The spring positioning beam 1-1-2 is used to cooperate with the pressure spring 9 to ensure the pressing pressure of the press-fit electrode 1.

[0044] like Figure 3 As shown, a transmission gear 7 is provided in the transmission cavity 3, and the transmission gear 7 is fixed in the hole 3-1 of the transmission cavity wall through the gear shaft 8.

[0045] like Figure 3 As shown, one end of button 4 is located inside the transmission cavity and meshes with transmission gear 7 through button transmission mechanism 4-1, while the other end extends out of the transmission cavity 3 for easy operation. One side of transmission gear 7 meshes with button 4, and the other side meshes with press-fit electrode shell 1-1 through press-fit electrode transmission mechanism 1-1-3.

[0046] like Figure 3 , Figure 4As shown, the bottom of the transmission cavity 3 is connected to the device base 2 via a rotating assembly, which includes a support spring 5. Since the chip 6 is typically moved using a suction pen, sufficient operating space above the chip 6 must be ensured during chip removal and placement for ease of operation. The rotating assembly provides this operating space for chip 6 replacement. The device base 2 has a through hole in the middle, and a base cover 2-4 is located at the bottom of the through hole. The support spring 5 is located in the through hole, with one end connected to the bottom of the transmission cavity 3 and the other end connected to the base cover 2-4.

[0047] By setting a blocking structure in the rotating assembly or using a shaped spring as a support spring 5, the rotation angle of the press-fit electrode 1 is limited to 0°-90°, so as to avoid the problem of inaccurate electrode connection caused by excessive or insufficient rotational displacement, and further improve the operating efficiency and operating accuracy.

[0048] like Figure 5 As shown, chip 6 is placed on the test station, with its bottom directly contacting the collector metal structure 2-2. Pressing button 4 causes the button transmission mechanism 4-1 at the end of button 4 to link the pressing electrode transmission mechanism 1-1-3 at the end of pressing electrode 1 via transmission gear 7, raising pressing electrode 1. Pressing and moving button 4 rotates pressing electrode 1 to the test station of chip 6. Slowly releasing button 4 causes pressing electrode 1 to descend under the restoring force of pressure spring 9, applying pressure to chip 6 and completing the pressing of chip 6.

[0049] like Figure 5 As shown, after chip 6 is press-fitted, the chip emitter leads out the signal through emitter metal structure 1-3 and emitter terminal 1-2, the chip gate introduces the gate signal through gate pin 1-6 and gate terminal 1-5, and the chip collector leads out the signal through collector metal structure 2-2 and collector terminal 2-3.

[0050] like Figure 5 As shown, after chip 6 is tested, pressing button 4 causes the transmission cavity 3 to move down appropriately, forming a rotation space under the support of the support spring 5. The button transmission mechanism 4-1 at the end of button 4 will link the pressing electrode transmission mechanism 1-1-3 at the end of pressing electrode 1 through the transmission gear 7, causing pressing electrode 1 to rise. By pressing and moving the button, pressing electrode 1 is rotated to the waiting position, and chip 6 is replaced.

[0051] This embodiment enables rapid replacement of chip 6, including pressure relief, electrode lifting, chip removal, chip placement, electrode descent, and pressurization. The chip 6 replacement process is simple, with a replacement rate of 5-10 seconds per chip. It uses a standard wiring method with a 4mm banana plug and 2.8mm cold-pressed terminals (adjustable size), accommodating both 50A power current and gate signal power levels. This significantly reduces the difficulty of connecting to testing equipment and easily meets customized testing requirements. Example 2

[0052] This invention provides a batch testing device for the electrical performance of a power chip 6, including multiple power chip 6 electrical performance testing devices according to Embodiment 1.

[0053] The electrical performance testing device for power chip 6 provided in Embodiment 1 is a single-chip 6 testing station. By expanding the number of stations, a batch electrical performance testing device for power chip 6 is obtained, which expands the number of chips 6 tested in a single batch and can further improve testing efficiency.

[0054] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A power chip electrical performance testing device, characterized in that, include: The device base (2) includes a base housing (2-1), the base housing (2-1) is provided with a limiting groove for fixing the chip (6), the bottom of the limiting groove is provided with a collector metal structure (2-2), the bottom of the base housing (2-1) is provided with a collector terminal (2-3), the top of the collector terminal (2-3) penetrates the base housing (2-1) and is connected to the collector metal structure (2-2), the collector metal structure (2-2) is used to directly contact the collector of the chip (6) to extract signals; The press-fit electrode (1) includes a press-fit electrode shell (1-1), an emitter terminal (1-2) is provided above the press-fit electrode shell (1-1), and an emitter metal structure (1-3) is provided at the bottom of the press-fit electrode shell (1-1). The emitter terminal (1-2) passes through the press-fit electrode shell (1-1) and connects to the emitter metal structure (1-3). The emitter metal structure (1-3) is used to directly contact the emitter of the chip (6) to extract a signal. The side of the press-fit electrode shell (1-1) is provided with a gate terminal (1-5) and a gate pin (1-6). The gate pin (1-6) passes through the gate terminal (1-5) and is used to directly contact the gate of the chip (6) to introduce a gate signal. The transmission cavity (3) and the button (4) are provided. The press-fit electrode shell (1-1) is assembled in the transmission cavity (3) by a pressure spring (9). The transmission cavity (3) is provided with a transmission gear (7). One side of the transmission gear (7) meshes with the button (4) and the other side meshes with the press-fit electrode shell (1-1). The bottom of the transmission cavity (3) is connected to the device base (2) through a rotating component. When the button (4) is pressed, the press-fit electrode (1) is raised and the transmission cavity (3) moves down. The transmission cavity (3) is supported by the rotating component and is suspended relative to the device base (2). Pressing and translating the button (4) rotates the press-fit electrode (1) to the test station or the waiting station.

2. The power chip electrical performance testing device according to claim 1, characterized in that, The device base (2) has a through hole in the middle and a base cover (2-4) at the bottom of the through hole. The rotating component includes a support spring (5), which is located in the through hole. One end of the support spring (5) is connected to the bottom of the transmission cavity (3), and the other end is connected to the base cover (2-4).

3. The power chip electrical performance testing device according to claim 2, characterized in that, The rotating assembly also includes a blocking structure for limiting the rotation angle of the press-fit electrode (1) to a range of 0°-90°.

4. The power chip electrical performance testing device according to claim 2, characterized in that, The support spring (5) is an irregularly shaped spring used to limit the rotation angle of the press-fit electrode (1) to a range of 0°-90°.

5. The power chip electrical performance testing device according to claim 1, characterized in that, The end of the press-fit electrode housing (1-1) is provided with a track beam (1-1-1) and a spring positioning beam (1-1-2). The inner wall of the transmission cavity is provided with a limiting track (3-2). The track beam (1-1-1) is assembled on the limiting track (3-2) to ensure that the press-fit electrode (1) does not tilt during the lifting and releasing process. The spring positioning beam (1-1-2) is used to cooperate with the pressure spring (9) to ensure the press-fit pressure of the press-fit electrode (1).

6. The power chip electrical performance testing device according to claim 1, characterized in that, The end of the press-fit electrode housing (1-1) is also provided with a press-fit electrode transmission mechanism (1-1-3), which is used to mesh with the transmission gear (7).

7. The power chip electrical performance testing device according to claim 1, characterized in that, The gate pin (1-6) is provided with a gate spring (1-4), and the extension and retraction of the gate spring (1-4) is controllable to ensure reliable contact between the gate pin (1-6) and the gate of the chip (6).

8. The power chip electrical performance testing device according to claim 1, characterized in that, The transmission cavity (3) has a transmission cavity wall hole (3-1) in the middle, and the transmission gear (7) is fixed in the transmission cavity wall hole (3-1) by the gear shaft (8).

9. The power chip electrical performance testing device according to claim 1, characterized in that, The button (4) meshes with the transmission gear (7) through the button transmission mechanism (4-1).

10. A batch testing device for the electrical performance of power chips, characterized in that, The invention includes the power chip electrical performance testing apparatus as described in any one of claims 1-9.

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