A semiconductor laser element provided with an optical polarization insertion layer

Abstract

The present invention provides a semiconductor laser device provided with an optical polarization insertion layer, which relates to the technical field of semiconductor optoelectronic devices. From bottom to top, it sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. An optical polarization insertion layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, reduce optical field dissipation, suppress optical field mode leakage. At the same time, it improves optical catastrophic damage, converts the vertical transverse laser mode into a single mode, suppresses mode hopping in the vertical direction, improves laser coherence, improves the beam quality factor and confinement factor, and reduces the ripple of the far-field image FFP.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser element provided with an optical polarization insertion layer. Background Art

[0002] Lasers are widely used in fields such as laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, high brightness, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the mW level; 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) Light-emitting diodes undergo spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external influence, while lasers are stimulated transition radiation, and the induced photon energy should be equal to the energy difference between the electron transitions, generating identical coherent light of photons and induced photons; 4) Different principles: Light-emitting diodes generate radiative recombination and light emission when electrons and holes jump to quantum wells or p-n junctions under the action of an external voltage, while lasers can only lasing when the lasing conditions are met, and it is necessary to satisfy the carrier population inversion distribution in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, satisfying the threshold condition that the gain is greater than the loss, and finally outputting laser light. Nitride semiconductor lasers have the following problems: 1) The mode of laser light waves can be divided into transverse modes and longitudinal modes; the transverse mode light intensity distribution in the cross-section perpendicular to the optical axis is determined by the waveguide structure of the semiconductor laser. If the transverse mode is complex and unstable, the coherence of the output light is poor; the longitudinal mode is a standing wave distribution in the propagation direction of the resonant cavity. If many longitudinal modes lase simultaneously or there are mode changes, high temporal coherence cannot be obtained, and the quality of the far-field image FFP is poor. 2) The optical field has dissipation, and the leakage of the optical field mode to the substrate to form a standing wave will result in low substrate mode suppression efficiency and poor far-field image FFP quality. Summary of the Invention

[0003] The object of the present invention is to provide a semiconductor laser element provided with an optical polarization insertion layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser element provided with an optical polarization insertion layer, which sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. Optical polarization insertion layers are provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The optical polarization insertion layer is any two or any combination of two or more of black phosphorus, NaNO2, PbZrO3, NaBiTiO3, CsBiNb2O7, Ti3C2T x , CuInP2S6, and WTe2.

[0005] As a preferred technical solution of the present invention, any combination of the optical polarization insertion layers includes the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: BP / NaNO2, BP / PbZrO3, BP / NaBiTiO3, BP / CsBiNb2O7, BP / Ti3C2T x , BP / CuInP2S6, BP / CuInP2S6, BP / WTe2, NaNO2 / PbZrO3, NaNO2 / NaBiTiO3, NaNO2 / CsBiNb2O7, NaNO2 / Ti3C2T x , NaNO2 / CuInP2S6, NaNO2 / WTe2, PbZrO3 / NaBiTiO3, PbZrO3 / CsBiNb2O7, PbZrO3 / Ti3C2T x , PbZrO3 / CuInP2S6, PbZrO3 / WTe2, CsBiNb2O7 / Ti3C2T x , CsBiNb2O7 / CuInP2S6, CsBiNb2O7 / WTe2, Ti3C2T x / CuInP2S6, Ti3C2T x / WTe2, CuInP2S6 / WTe2.

[0006] As a preferred technical solution of the present invention, any combination of the optical polarization insertion layers includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: BP / NaNO2 / PbZrO3, BP / NaNO2 / NaBiTiO3, BP / NaNO2 / CsBiNb2O7, BP / NaNO2 / Ti3C2T x , BP / NaNO2 / CuInP2S6, BP / NaNO2 / WTe2, BP / PbZrO3 / NaBiTiO3, BP / PbZrO3 / CsBiNb2O7, BP / PbZrO3 / Ti3C2T x, BP / PbZrO3 / CuInP2S6, BP / PbZrO3 / WTe2, BP / NaBiTiO3 / CsBiNb2O7, BP / NaBiTiO3 / Ti3C2T x , BP / NaBiTiO3 / CuInP2S6,BP / NaBiTiO3 / WTe2, BP / CsBiNb2O7 / Ti3C2T x , BP / CsBiNb2O7 / CuInP2S6, BP / CsBiNb2O7 / WTe2,BP / Ti3C2T x / CuInP2S6, BP / Ti3C2T x / WTe2, BP / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3,NaNO2 / PbZrO3 / CsBiNb2O7, NaNO2 / PbZrO3 / Ti3C2T x , NaNO2 / PbZrO3 / CuInP2S6, NaNO2 / PbZrO3 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7, NaNO2 / NaBiTiO3 / Ti3C2T x , NaNO2 / NaBiTiO3 / CuInP2S6,NaNO2 / NaBiTiO3 / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x , NaNO2 / CsBiNb2O7 / CuInP2S6, NaNO2 / CsBiNb2O7 / WTe2, NaNO2 / Ti3C2T x / CuInP2S6, NaNO2 / Ti3C2T x / WTe2, NaNO2 / CuInP2S6 / WTe2,PbZrO3 / NaBiTiO3 / CsBiNb2O7, PbZrO3 / NaBiTiO3 / Ti3C2T x , PbZrO3 / NaBiTiO3 / CuInP2S6,PbZrO3 / NaBiTiO3 / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x , PbZrO3 / CsBiNb2O7 / CuInP2S6,PbZrO3 / CsBiNb2O7 / WTe2, PbZrO3 / Ti3C2T x / CuInP2S6, PbZrO3 / Ti3C2T x / WTe2, PbZrO3 / CuInP2S6 / WTe2,NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / WTe2,CsBiNb2O7 / Ti3C2T x / CuInP2S6, CsBiNb2O7 / Ti3C2T x / WTe2, CsBiNb2O7 / CuInP2S6 / WTe2,Ti3C2T x / CuInP2S6 / WTe。

[0007] As a preferred technical solution of the present invention, any combination of the optical polarization insertion layers includes the following four - element combinations of heterojunctions, superlattices, quantum wells, core - shell structures, and quantum dot structures: BP / NaNO2 / PbZrO3 / NaBiTiO3, BP / NaNO2 / PbZrO3 / CsBiNb2O7, BP / NaNO2 / PbZrO3 / Ti3C2T x , BP / NaNO2 / PbZrO3 / CuInP2S6, BP / NaNO2 / PbZrO3 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7, BP / PbZrO3 / NaBiTiO3 / Ti3C2T x , BP / PbZrO3 / NaBiTiO3 / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / CsBiNb2O7 / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7, NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x , NaNO2 / PbZrO3 / NaBiTiO3 / CuInP2S6, NaNO2 / PbZrO3 / NaBiTiO3 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaNO2 / NaBiTiO3 / CsBiNb2O7 / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, PbZrO3 / CsBiNb2O7 / Ti3C2T x / WTe2, PbZrO3 / Ti3C2T x / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2, CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2。

[0008] As a preferred technical solution of the present invention, any combination of the optical polarization insertion layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, seven-element, and eight-element combinations: BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7, BP / NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x , BP / NaNO2 / PbZrO3 / NaBiTiO3 / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x ,BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6,PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2,NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2,BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2,BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2,BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2。

[0009] As a preferred technical solution of the present invention, an optical polarization insertion layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, reduce optical field dissipation, suppress optical field mode leakage. At the same time, it can improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, enhance laser coherence, and improve the beam quality factor, confinement factor, and far-field image FFP quality.

[0010] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0012] In the solution of the present invention:

[0013] Compared with the prior art, an optical polarization insertion layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, reduce optical field dissipation, suppress optical field mode leakage. At the same time, it can improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, enhance laser coherence, and improve the beam quality factor, confinement factor, and far-field image FFP quality.

[0014] The beam quality factor of the green laser decreases from 1.78 to 1.09, with an increase of 63%; the confinement factor increases from 1.97% to 2.68%, with an increase of 36%.

[0015] BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 FIG. is a schematic structural diagram of a semiconductor laser device provided with an optical polarization insertion layer according to the present invention.

[0017] Reference numerals in the figure:

[0018] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Optical polarization insertion layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0019] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention.

[0020] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0021] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0022] Embodiment 1

[0023] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with an optical polarization insertion layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. An optical polarization insertion layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0024] The optical polarization insertion layer 107 is any one of black phosphorus, NaNO2, PbZrO3, NaBiTiO3, CsBiNb2O7, Ti3C2T x , CuInP2S6, and WTe2.

[0025] The optical polarization insertion layer 107 is above the upper confinement layer 106. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, and improve the lasing power and slope efficiency of the laser element.

[0026] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0027] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0028] Example 2

[0029] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with an optical polarization insertion layer, a semiconductor laser element provided with an optical polarization insertion layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. An optical polarization insertion layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0030] The optical polarization insertion layer 107 is above the upper confinement layer 106. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, and improve the lasing power and slope efficiency of the laser element.

[0031] Any combination of the optical polarization insertion layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures of binary combinations: BP / NaNO2, BP / PbZrO3, BP / NaBiTiO3, BP / CsBiNb2O7, BP / Ti3C2T x , BP / CuInP2S6, BP / CuInP2S6, BP / WTe2, NaNO2 / PbZrO3, NaNO2 / NaBiTiO3, NaNO2 / CsBiNb2O7,NaNO2 / Ti3C2T x , NaNO2 / CuInP2S6, NaNO2 / WTe2, PbZrO3 / NaBiTiO3, PbZrO3 / CsBiNb2O7,PbZrO3 / Ti3C2T x , PbZrO3 / CuInP2S6, PbZrO3 / WTe2, CsBiNb2O7 / Ti3C2T x , CsBiNb2O7 / CuInP2S6, CsBiNb2O7 / WTe2, Ti3C2T x / CuInP2S6, Ti3C2T x / WTe2, CuInP2S6 / WTe。

[0032] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0033] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0034] Example 3

[0035] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with an optical polarization insertion layer, a semiconductor laser device provided with an optical polarization insertion layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. An optical polarization insertion layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0036] The optical polarization insertion layer 107 is above the upper confinement layer 106. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, and improve the lasing power and slope efficiency of the laser device.

[0037] Any combination of the optical polarization insertion layer 107 includes heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of the following ternary combinations: BP / NaNO2 / PbZrO3, BP / NaNO2 / NaBiTiO3, BP / NaNO2 / CsBiNb2O7, BP / NaNO2 / Ti3C2T x, BP / NaNO2 / CuInP2S6, BP / NaNO2 / WTe2, BP / PbZrO3 / NaBiTiO3, BP / PbZrO3 / CsBiNb2O7, BP / PbZrO3 / Ti3C2T x , BP / PbZrO3 / CuInP2S6, BP / PbZrO3 / WTe2, BP / NaBiTiO3 / CsBiNb2O7, BP / NaBiTiO3 / Ti3C2T x , BP / NaBiTiO3 / CuInP2S6, BP / NaBiTiO3 / WTe2,BP / CsBiNb2O7 / Ti3C2T x , BP / CsBiNb2O7 / CuInP2S6, BP / CsBiNb2O7 / WTe2, BP / Ti3C2T x / CuInP2S6, BP / Ti3C2T x / WTe2, BP / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3, NaNO2 / PbZrO3 / CsBiNb2O7, NaNO2 / PbZrO3 / Ti3C2T x , NaNO2 / PbZrO3 / CuInP2S6, NaNO2 / PbZrO3 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7, NaNO2 / NaBiTiO3 / Ti3C2T x , NaNO2 / NaBiTiO3 / CuInP2S6, NaNO2 / NaBiTiO3 / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x , NaNO2 / CsBiNb2O7 / CuInP2S6, NaNO2 / CsBiNb2O7 / WTe2, NaNO2 / Ti3C2T x / CuInP2S6, NaNO2 / Ti3C2T x / WTe2, NaNO2 / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7, PbZrO3 / NaBiTiO3 / Ti3C2T x , PbZrO3 / NaBiTiO3 / CuInP2S6, PbZrO3 / NaBiTiO3 / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x, PbZrO3 / CsBiNb2O7 / CuInP2S6, PbZrO3 / CsBiNb2O7 / WTe2, PbZrO3 / Ti3C2T x / CuInP2S6, PbZrO3 / Ti3C2T x / WTe2, PbZrO3 / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / WTe2, CsBiNb2O7 / Ti3C2T x / CuInP2S6, CsBiNb2O7 / Ti3C2T x / WTe2, CsBiNb2O7 / CuInP2S6 / WTe2, Ti3C2T x / CuInP2S6 / WTe。

[0038] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0039] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0040] Example 4

[0041] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with an optical polarization insertion layer. The semiconductor laser device includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An optical polarization insertion layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0042] The optical polarization insertion layer 107 is above the upper confinement layer 106. The optical polarization insertion layer can achieve fast charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, and enhance the lasing power and slope efficiency of the laser element.

[0043] Any combination of the optical polarization insertion layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of a quaternary combination: BP / NaNO2 / PbZrO3 / NaBiTiO3, BP / NaNO2 / PbZrO3 / CsBiNb2O7, BP / NaNO2 / PbZrO3 / Ti3C2T x , BP / NaNO2 / PbZrO3 / CuInP2S6, BP / NaNO2 / PbZrO3 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7, BP / PbZrO3 / NaBiTiO3 / Ti3C2T x , BP / PbZrO3 / NaBiTiO3 / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / CsBiNb2O7 / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7, NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x , NaNO2 / PbZrO3 / NaBiTiO3 / CuInP2S6,NaNO2 / PbZrO3 / NaBiTiO3 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaNO2 / NaBiTiO3 / CsBiNb2O7 / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / CsBiNb2O7 / Ti3C2T x / WTe2,NaNO2 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, PbZrO3 / CsBiNb2O7 / Ti3C2T x / WTe2, PbZrO3 / Ti3C2T x / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2,

[0044] Example 5

[0045] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with an optical polarization insertion layer, a semiconductor laser element provided with an optical polarization insertion layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. An optical polarization insertion layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0046] The optical polarization insertion layer 107 is above the upper confinement layer 106. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, and improve the lasing power and slope efficiency of the laser element.

[0047] Any combination of the optical polarization insertion layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, seven-element, and eight-element combinations: BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7, BP / NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x , BP / NaNO2 / PbZrO3 / NaBiTiO3 / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6,NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2,BP / NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2。

[0048] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0049] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0050] Compared with the prior art, an optical polarization insertion layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The optical polarization insertion layer can achieve rapid charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, reduce optical field dissipation, suppress optical field mode leakage. At the same time, it improves optical catastrophic damage, converts the vertical transverse laser mode into a single mode, enhances laser coherence, and improves the beam quality factor, confinement factor, and far-field image FFP quality.

[0051] The beam quality factor of the green laser decreases from 1.78 to 1.09, with an increase of 63%; the confinement factor increases from 1.97% to 2.68%, an increase of 36%.

[0052]

[0053] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although this specification has described the present invention in detail with reference to the above respective embodiments, the present invention is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and their improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with an optical polarization insertion layer, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106) from bottom to top, and is characterized in that: An optical polarization insertion layer (107) is provided between the active layer (103) and the upper waveguide layer (104) and between the active layer (103) and the lower waveguide layer (102). The optical polarization insertion layer (107) is any two or more combinations of black phosphorus, NaNO2, PbZrO3, NaBiTiO3, CsBiNb2O7, Ti3C2T x , CuInP2S6, and WTe2.

2. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, Any combination of the optical polarization insertion layer (107) includes heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of the following binary combinations: BP / NaNO2, BP / PbZrO3, BP / NaBiTiO3, BP / CsBiNb2O7, BP / Ti3C2T x , BP / CuInP2S6, BP / CuInP2S6, BP / WTe2, NaNO2 / PbZrO3, NaNO2 / NaBiTiO3, NaNO2 / CsBiNb2O7,NaNO2 / Ti3C2T x , NaNO2 / CuInP2S6, NaNO2 / WTe2, PbZrO3 / NaBiTiO3, PbZrO3 / CsBiNb2O7,PbZrO3 / Ti3C2T x , PbZrO3 / CuInP2S6, PbZrO3 / WTe2, CsBiNb2O7 / Ti3C2T x , CsBiNb2O7 / CuInP2S6, CsBiNb2O7 / WTe2, Ti3C2T x / CuInP2S6, Ti3C2T x / WTe2, CuInP2S6 / WTe。 3. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, Any combination of the optical polarization insertion layer (107) includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: BP / NaNO2 / PbZrO3, BP / NaNO2 / NaBiTiO3, BP / NaNO2 / CsBiNb2O7, BP / NaNO2 / Ti3C2T x , BP / NaNO2 / CuInP2S6, BP / NaNO2 / WTe2, BP / PbZrO3 / NaBiTiO3, BP / PbZrO3 / CsBiNb2O7, BP / PbZrO3 / Ti3C2T x , BP / PbZrO3 / CuInP2S6, BP / PbZrO3 / WTe2, BP / NaBiTiO3 / CsBiNb2O7, BP / NaBiTiO3 / Ti3C2T x , BP / NaBiTiO3 / CuInP2S6, BP / NaBiTiO3 / WTe2, BP / CsBiNb2O7 / Ti3C2T x , BP / CsBiNb2O7 / CuInP2S6, BP / CsBiNb2O7 / WTe2, BP / Ti3C2T x / CuInP2S6,BP / Ti3C2T x / WTe2, BP / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3, NaNO2 / PbZrO3 / CsBiNb2O7,NaNO2 / PbZrO3 / Ti3C2T x , NaNO2 / PbZrO3 / CuInP2S6, NaNO2 / PbZrO3 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7, NaNO2 / NaBiTiO3 / Ti3C2T x , NaNO2 / NaBiTiO3 / CuInP2S6, NaNO2 / NaBiTiO3 / WTe2,NaNO2 / CsBiNb2O7 / Ti3C2T x , NaNO2 / CsBiNb2O7 / CuInP2S6, NaNO2 / CsBiNb2O7 / WTe2, NaNO2 / Ti3C2T x / CuInP2S6, NaNO2 / Ti3C2T x , PbZrO3 / NaBiTiO3 / CsBiNb2O7, PbZrO3 / NaBiTiO3 / Ti3C2T x , PbZrO3 / NaBiTiO3 / CuInP2S6, PbZrO3 / NaBiTiO3 / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x , PbZrO3 / CsBiNb2O7 / CuInP2S6,PbZrO3 / CsBiNb2O7 / WTe2,PbZrO3 / Ti3C2T x / CuInP2S6, PbZrO3 / Ti3C2T x / WTe2, PbZrO3 / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / WTe2,CsBiNb2O7 / Ti3C2T x / CuInP2S6, CsBiNb2O7 / Ti3C2T x / WTe2, CsBiNb2O7 / CuInP2S6 / WTe2,Ti3C2T x / CuInP2S6 / WTe2。 4. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, Any combination of the optical polarization insertion layer (107) includes the following four-component combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: BP / NaNO2 / PbZrO3 / NaBiTiO3, BP / NaNO2 / PbZrO3 / CsBiNb2O7, BP / NaNO2 / PbZrO3 / Ti3C2T x , BP / NaNO2 / PbZrO3 / CuInP2S6, BP / NaNO2 / PbZrO3 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7, BP / PbZrO3 / NaBiTiO3 / Ti3C2T x , BP / PbZrO3 / NaBiTiO3 / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / CsBiNb2O7 / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7, NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x , NaNO2 / PbZrO3 / NaBiTiO3 / CuInP2S6, NaNO2 / PbZrO3 / NaBiTiO3 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaNO2 / NaBiTiO3 / CsBiNb2O7 / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / CsBiNb2O7 / Ti3C2T x / WTe2,NaNO2 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, PbZrO3 / CsBiNb2O7 / Ti3C2T x / WTe2, PbZrO3 / Ti3C2T x / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2, CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2。 5. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, Any combination of the optical polarization insertion layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures in five-element, six-element, seven-element, and eight-element combinations: BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7, BP / NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x , BP / NaNO2 / PbZrO3 / NaBiTiO3 / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x , BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6,NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2,BP / NaNO2 / PbZrO3 / NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / CuInP2S6 / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2, BP / NaNO2 / PbZrO3 / NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2。 6. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, The optical polarization insertion layer (107) can achieve fast charge transfer, control the phase and polarization of the laser emitted by the active layer, achieve precise optical polarization regulation, reduce optical field dissipation, suppress optical field mode leakage. At the same time, it can improve optical catastrophic damage, convert the vertical transverse laser mode into a single mode, enhance laser coherence, improve the beam quality factor, confinement factor and far-field image FFP quality.

7. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, The thickness of the optical polarization insertion layer (107) is 5 - 500 nm.

8. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

9. The semiconductor laser device provided with an optical polarization insertion layer according to claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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