High frequency module and communication device

Abstract

The present invention shortens the sum of the lengths of wirings between reception filters and low-noise amplifiers. A high-frequency module (1) is provided with a mounting substrate (6), a plurality of inductors (4), a plurality of reception filters (2), and an IC component. The plurality of inductors (4) are mounted on a first main surface (61) of the mounting substrate (6). The plurality of reception filters (2) are mounted on the first main surface (61) of the mounting substrate (6). The IC component is mounted on a second main surface of the mounting substrate (6) and includes a low-noise amplifier. When viewed from a thickness direction of the mounting substrate (6), a rectangular region (A1) in which the plurality of inductors (4) are present overlaps the IC component. Of three or more edges (A21 to A24) of the rectangular region (A1), an electronic component closest to the edge of the rectangular region (A1) is at least one reception filter of the plurality of reception filters (2).

Description

TECHNICAL FIELD

[0001] The present application relates generally to a high-frequency module and a communication device, and more particularly to a high-frequency module provided with a plurality of inductors and a plurality of reception filters, and a communication device provided with the high-frequency module. BACKGROUND

[0002] Conventionally, a high-frequency module provided with an inductor and a filter is known (for example, refer to Patent Literature 1). In the high-frequency module described in Patent Literature 1, a filter section and an inductor are provided on a surface of a substrate, and a switch IC is provided on a back surface of the substrate.

[0003] The switch IC is configured of two switch sections and an amplification section, and the inductor is connected between the switch sections and the amplification section.

[0004] The switch section has an input terminal and an output terminal, the input terminal is connected to an antenna element, and the output terminal is connected to an input terminal of the filter section.

[0005] Patent Literature 1: International Publication No. 2018 / 110393

[0006] However, with recent multi-band, a module provided with a plurality of reception filters is required.

[0007] However, in the conventional high-frequency module described in Patent Literature 1, for a plurality of reception filters, the sum of the lengths of the wirings between the reception filters and the low-noise amplifiers becomes long, and there is a case where the path loss increases. For example, in a case where the high-frequency module is provided with two reception filters (a first reception filter and a second reception filter), the "sum of the lengths of the wirings between the reception filters and the low-noise amplifiers" is the sum of the length of the wiring between the first reception filter and the low-noise amplifier and the length of the wiring between the second reception filter and the low-noise amplifier. SUMMARY

[0008] The present application was achieved in view of the above-described points, and an object thereof is to provide a high-frequency module and a communication device capable of shortening the sum of the lengths of the wirings between reception filters and a low-noise amplifier.

[0009] A high-frequency module of one embodiment of the present application includes a mounting substrate, a plurality of inductors, a plurality of reception filters, and an IC component. The mounting substrate has a first main surface and a second main surface which face each other. The plurality of inductors are mounted on the first main surface of the mounting substrate. The plurality of reception filters are mounted on the first main surface of the mounting substrate. The IC component is mounted on the second main surface of the mounting substrate and includes a low-noise amplifier. Each of the plurality of inductors corresponds to part of the plurality of reception filters and is connected to the corresponding reception filter and the low-noise amplifier. When the mounting substrate is viewed in a direction of a thickness thereof, a rectangular region where the plurality of inductors are located overlaps with the IC component. With respect to each of three or more sides of four sides of the rectangular region, an electronic component closest to the side of the rectangular region is at least one reception filter of the plurality of reception filters.

[0010] A communication device of one embodiment of the present application includes the high-frequency module and a signal processing circuit. The signal processing circuit processes a signal transmitted through the high-frequency module.

[0011] According to the high-frequency module and the communication device of one embodiment of the present application, the sum of the lengths of the wirings between the reception filters and the low-noise amplifier can be shortened. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 FIG. 1 is a top view of a high-frequency module of one embodiment.

[0013] Figure 2 FIG. 1 is a top view of a high-frequency module of one embodiment.

[0014] Figure 3 FIG. 1 is a top view of a high-frequency module of one embodiment. Figure 1 FIG. 1 is a top view of a high-frequency module of one embodiment.

[0015] Figure 4 FIG. 1 is a top view of a high-frequency module of one embodiment.

[0016] Figure 5 FIG. 1 is a top view of a high-frequency module of one embodiment. DETAILED DESCRIPTION

[0017] A high-frequency module and a communication device of one embodiment of the present application will be described below with reference to drawings. In the following embodiments and the like, a high-frequency module and a communication device of one embodiment of the present application will be described with reference to drawings. The sizes, the thicknesses, the shapes, and the like of the components such as the high-frequency module and the communication device in the drawings and the like are not necessarily to scale and are presented for purposes of illustration only. Figures 1-3 Figure 5 FIG. 1 is a top view of a high-frequency module of one embodiment.

[0018] (Embodiment)

[0019] (1) High-frequency module​

[0020] The structure of the high-frequency module 1 of the embodiment will be described with reference to the drawings.

[0021] As shown in Figure 1 , Figure 2 and Figure 4 , the high-frequency module 1 of the embodiment is provided with a plurality of (two in the illustrated example) power amplifiers 11, a plurality of (two in the illustrated example) transmission filters 12, a plurality of (ten in the illustrated example) reception filters 2, a plurality of (ten in the illustrated example) low-noise amplifiers 3, a plurality of (ten in the illustrated example) inductors 4, a first switch 51, and a second switch 52.

[0022] In addition, as shown in Figures 1-3 , the high-frequency module 1 is provided with a mounting substrate 6, a plurality of external connection terminals 7, a first resin layer 81, a second resin layer 82, and a shielding layer 83.

[0023] The IC component 13 is provided on the mounting substrate 6, and contains a plurality of low-noise amplifiers 3, a first switch 51, and a second switch 52.

[0024] As shown in Figure 4 , for example, the high-frequency module 1 is used for a communication device 9. The communication device 9 is, for example, a mobile phone like a smartphone. Furthermore, the communication device 9 is not limited to a mobile phone, and may, for example, be a wearable terminal like a smartwatch or the like. The high-frequency module 1 is, for example, a module that can cope with a 4G (fourth generation mobile communication) standard, a 5G (fifth generation mobile communication) standard, or the like. The 4G standard is, for example, a 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is, for example, a module that can support carrier aggregation and dual connectivity.

[0025] The communication device 9 performs communication of a plurality of communication bands. More specifically, the communication device 9 performs transmission of transmission signals of a plurality of communication bands, and reception of reception signals of a plurality of communication bands.

[0026] The transmission signal and a part of the reception signal of the plurality of communication bands are signals of FDD (Frequency Division Duplex). In addition, the transmission signal and the reception signal of the plurality of communication bands are not limited to the signals of FDD, and can be signals of TDD (Time Division Duplex). FDD is a wireless communication technology in which transmission and reception in wireless communication are allocated different frequency bands, and transmission and reception are performed. TDD is a wireless communication technology in which transmission and reception in wireless communication are allocated the same frequency band, and transmission and reception are switched by time.

[0027] (2) Circuit structure of high-frequency module

[0028] Hereinafter, the circuit structure of the high-frequency module 1 of the embodiment will be described with reference to Figure 4 The circuit structure of the high-frequency module 1 of the embodiment will be described.

[0029] (2.1) Power amplifier

[0030] Figure 4 The plurality of power amplifiers 11 illustrated are amplifiers that amplify mutually different transmission signals. Each power amplifier 11 is provided between the signal input terminal 72 and the transmission filter 12 in the transmission path P1 that links the antenna terminal 71 and the signal input terminal 72 described later. The power amplifier 11 has an input terminal (not illustrated) and an output terminal (not illustrated). The input terminal of the power amplifier 11 is connected to an external circuit (for example, the signal processing circuit 92) via the signal input terminal 72. The output terminal of the power amplifier 11 is connected to the transmission filter 12. The power amplifier 11 is controlled by a controller (not illustrated), for example. In addition, the power amplifier 11 can be directly or indirectly connected to the transmission filter 12. The power amplifier 11 can also be connected to the transmission filter 12 via an output matching circuit (not illustrated), for example. The output matching circuit is provided between the power amplifier 11 and the transmission filter 12 in the transmission path P1. The output matching circuit achieves impedance matching between the power amplifier 11 and the transmission filter 12.

[0031] (2.2) Transmission filter

[0032] Figure 4 The plurality of transmission filters 12 illustrated are filters that pass transmission signals of mutually different communication bands. More specifically, the transmission filter 12 is provided between the power amplifier 11 and the first switch 51 in the transmission path P1. The transmission filter 12 passes transmission signals of the transmission band of the communication band in the high-frequency signal amplified by the power amplifier 11.

[0033] (2.3) Reception filter

[0034] Figure 4The multiple receiving filters 2 shown are filters that allow received signals from different communication frequency bands to pass through. The multiple receiving filters 2 include an nth receiving filter 2 (n is a natural number). The nth receiving filter 2 is disposed in the nth receiving path P2 connecting the antenna terminal 71 and the signal output terminal 73, between the first switch 51 and the nth low-noise amplifier 3. The nth receiving filter 2 allows the received signal from the nth communication frequency band of the high-frequency signal input from the antenna terminal 71 to pass through.

[0035] (2.4) Low-noise amplifier

[0036] Figure 4 The multiple low-noise amplifiers 3 shown are amplifiers that amplify different received signals with low noise. Figure 4 In this example, multiple low-noise amplifiers 3 correspond one-to-one with multiple receiving paths P2. The multiple low-noise amplifiers 3 include an nth low-noise amplifier 3 (n is a natural number). The nth low-noise amplifier 3 is positioned between the first switch 51 and the signal output terminal 73 in the nth receiving path P2. The nth low-noise amplifier 3 has input and output terminals; the input terminal of the nth low-noise amplifier 3 is connected to the nth inductor 4, described later. The output terminal of the nth low-noise amplifier 3 is connected to an external circuit (e.g., signal processing circuit 92) via the signal output terminal 73.

[0037] (2.5) Inductor

[0038] Figure 4 The multiple inductors 4 shown are connected to multiple receiving filters 2 and multiple low-noise amplifiers 3. More specifically, each of the multiple inductors 4 corresponds to a portion of the multiple receiving filters 2 and is connected to the corresponding receiving filter 2. Figure 4 In this example, multiple inductors 4 correspond one-to-one with multiple receiving filters 2. Additionally, each inductor 4 corresponds to a portion of the multiple low-noise amplifiers 3 and is connected to its corresponding low-noise amplifier 3. Figure 4 In this example, multiple inductors 4 correspond one-to-one with multiple low-noise amplifiers 3. The multiple inductors 4 include an nth inductor 4 (n is a natural number). The nth inductor 4 is positioned between the nth receiving filter 2 and the nth low-noise amplifier 3 in the nth receiving path P2. The first terminal of the nth inductor 4 is connected to the nth receiving filter 2. The second terminal of the nth inductor 4 is connected to the nth low-noise amplifier 3.

[0039] Multiple inductors 4 respectively constitute a matching circuit to achieve impedance matching between the receiving filter 2 and the low-noise amplifier 3. In other words, the nth inductor 4 constitutes the nth matching circuit to achieve impedance matching between the nth receiving filter 2 and the nth low-noise amplifier 3.

[0040] (2.6) First switch

[0041] Figure 4 The illustrated first switch 51 switches the filter (at least one of the transmission filter 12 and the reception filter 2) connected to the antenna terminal 71 from among the plurality of transmission filters 12 and the plurality of reception filters 2. The first switch 51 is a switch for switching the path connected to the antenna 91. The first switch 51 has a common terminal 511 and a plurality of (eight in the illustrated example) selection terminals 512. The common terminal 511 is connected to the antenna terminal 71. The plurality of selection terminals 512 are respectively connected to at least one filter among the plurality of transmission filters 12 and the plurality of reception filters 2. To be more specific, each selection terminal 512 is connected to at least one terminal among the output terminals of the plurality of transmission filters 12 and the input terminals of the plurality of reception filters 2.

[0042] The first switch 51 switches the connection state of the common terminal 511 and the plurality of selection terminals 512. The first switch 51 is controlled by the signal processing circuit 92, for example. The first switch 51 electrically connects the common terminal 511 and at least one selection terminal among the plurality of selection terminals 512 in accordance with the control signal from the RF signal processing circuit 93 of the signal processing circuit 92.

[0043] (2.7) Second switch

[0044] Figure 4 The illustrated second switch 52 switches the low-noise amplifier 3 connected to the signal output terminal 73 from among the plurality of low-noise amplifiers 3. The second switch 52 is a switch for switching the path connected to the signal output terminal 73. The second switch 52 has a common terminal 521 and a plurality of (ten in the illustrated example) selection terminals 522. The common terminal 521 is connected to the signal output terminal 73. The plurality of selection terminals 522 are respectively connected to the reception filter 2. To be more specific, each selection terminal 522 is connected to at least one output terminal among the output terminals of the plurality of low-noise amplifiers 3.

[0045] The second switch 52 switches the connection state of the common terminal 521 and the plurality of selection terminals 522. The second switch 52 is controlled by the signal processing circuit 92, for example. The second switch 52 electrically connects the common terminal 521 and at least one selection terminal among the plurality of selection terminals 522 in accordance with the control signal from the RF signal processing circuit 93 of the signal processing circuit 92.

[0046] (2.8) External connection terminal

[0047] As Figures 1-3As shown, the plurality of external connection terminals 7 are terminals for electrical connection to external circuitry (e.g., signal processing circuitry 92). The plurality of external connection terminals 7 include an antenna terminal 71, a plurality of (two in the example) signal input terminals 72, a signal output terminal 73, and a ground terminal (not shown).

[0048] Antenna terminal 71 is connected to antenna 91. Within the high-frequency module 1, antenna terminal 71 is connected to first switch 51. Additionally, antenna terminal 71 is connected via first switch 51 to multiple transmitting filters 12 and multiple receiving filters 2.

[0049] Signal input terminal 72 is a terminal for inputting transmitted signals from external circuitry (e.g., signal processing circuitry 92) to the high-frequency module 1. Within the high-frequency module 1, signal input terminal 72 corresponds to and is connected to at least one of a plurality of power amplifiers 11.

[0050] The signal output terminal 73 is a terminal that outputs the received signals from the plurality of low-noise amplifiers 3 to an external circuit (e.g., signal processing circuit 92). Within the high-frequency module 1, the signal output terminal 73 is connected to the plurality of low-noise amplifiers 3 via a second switch 52.

[0051] (3) Structure of the high-frequency module

[0052] Hereinafter, the structure of the high-frequency module 1 of the embodiment will be described with reference to the accompanying drawings.

[0053] like Figure 3 As shown, the high-frequency module 1 includes a mounting base plate 6, multiple external connection terminals 7, a first resin layer 81, a second resin layer 82, and a shielding layer 83.

[0054] The high-frequency module 1 can be electrically connected to an external substrate (not shown). The external substrate is, for example, the mother substrate of a mobile phone or communication device. Furthermore, the ability of the high-frequency module 1 to be electrically connected to the external substrate includes not only the case where the high-frequency module 1 is directly mounted on the external substrate, but also the case where the high-frequency module 1 is indirectly mounted on the external substrate. Additionally, the case where the high-frequency module 1 is indirectly mounted on the external substrate includes situations where the high-frequency module 1 is mounted on another high-frequency module, and that other high-frequency module is mounted on the external substrate.

[0055] (3.1) Mounting the substrate

[0056] like Figure 4As shown, the mounting substrate 6 has a first main surface 61 and a second main surface 62. The first main surface 61 and the second main surface 62 are opposite to each other in the thickness direction D1 of the mounting substrate 6. When the high-frequency module 1 is disposed on an external substrate (not shown), the second main surface 62 is opposite to the external substrate. The mounting substrate 6 is a double-sided mounting substrate on which electronic components are mounted on each of the first main surface 61 and the second main surface 62.

[0057] Mounting substrate 6 is a multilayer substrate with multiple dielectric layers stacked on top of each other. Mounting substrate 6 has multiple conductive layers 63 and multiple through electrodes 64. The multiple conductive layers 63 include a ground layer set to a ground potential. The multiple through electrodes 64 are used for electrical connection between components (including the aforementioned electronic components) mounted on each of the first main surface 61 and the second main surface 62 and the conductive layers 63 of mounting substrate 6. Additionally, the multiple through electrodes 64 are used for electrical connection between components mounted on the first main surface 61 and components mounted on the second main surface 62, and for electrical connection between the conductive layers 63 of mounting substrate 6 and external connection terminals 7.

[0058] On the first main surface 61 of the mounting substrate 6, a plurality of power amplifiers 11 are disposed (see reference). Figures 1-3 ), multiple transmitting filters 12, multiple receiving filters 2, and multiple inductors 4.

[0059] On the second main surface 62 of the mounting substrate 6, a plurality of low-noise amplifiers 3 and a first switch 51 are disposed. Furthermore, on the second main surface 62 of the mounting substrate 6, a plurality of external connection terminals 7 are disposed.

[0060] (3.2) Power Amplifier

[0061] Although Figure 1 The power amplifier 11 is not shown in the figure, but it is mounted on the first main surface 61 of the mounting substrate 6. Alternatively, a portion of the power amplifier 11 may be mounted on the first main surface 61 of the mounting substrate 6, with the remaining portion of the power amplifier 11 embedded within the mounting substrate 6. In summary, the power amplifier 11 has at least a portion located on the mounting substrate 6 closer to the first main surface 61 than the second main surface 62, and mounted on the first main surface 61.

[0062] (3.3) Transmit Filter

[0063] The plurality of transmission filters 12 are, for example, elastic wave filters each including a plurality of series arm resonators and a plurality of parallel arm resonators. The elastic wave filter is, for example, a SAW (Surface Acoustic Wave) filter using an elastic surface wave. Also, each transmission filter 12 can include at least one of an inductor and a capacitor connected in series with any one of the plurality of series arm resonators, or can include an inductor or a capacitor connected in series with any one of the plurality of parallel arm resonators.

[0064] As shown in Figure 3 and Figure 1 , the plurality of transmission filters 12 are mounted on the first main surface 61 of the mounting substrate 6. In Figure 1 , each transmission filter 12 is mounted on the first main surface 61 of the mounting substrate 6. Also, in each transmission filter 12, a part of the transmission filter 12 can be mounted on the first main surface 61 of the mounting substrate 6, and the remaining part of the transmission filter 12 can be built in the mounting substrate 6. In any case, each transmission filter 12 has at least a part disposed in the mounting substrate 6 on the first main surface 61 side from the second main surface 62, and mounted on the first main surface 61.

[0065] Also, the transmission filter 12 denoted as "Txn" (n is a natural number) in Figure 4 refers to a transmission filter provided in a transmission path P1 (refer to Figure 1 ) of a transmission signal of Bandn. For example, the transmission filter 12 denoted as "Tx1" refers to a transmission filter provided in a transmission path P1 of a transmission signal of Band1.

[0066] (3.4) Reception Filter

[0067] The plurality of reception filters 2 are, for example, elastic wave filters each including a plurality of series arm resonators and a plurality of parallel arm resonators. The elastic wave filter is, for example, a SAW filter using an elastic surface wave. Also, each reception filter 2 can include at least one of an inductor and a capacitor connected in series with any one of the plurality of series arm resonators, or can include an inductor or a capacitor connected in series with any one of the plurality of parallel arm resonators.

[0068] As shown in Figure 3 and Figure 1 , the plurality of reception filters 2 are disposed on the first main surface 61 of the mounting substrate 6. In Figure 1In the example, each receiving filter 2 is mounted on the first main surface 61 of the mounting substrate 6. Furthermore, in each receiving filter 2, a portion of the receiving filter 2 may be mounted on the first main surface 61 of the mounting substrate 6, while the remaining portion of the receiving filter 2 is embedded within the mounting substrate 6. In summary, the receiving filter 2 has at least a portion disposed on the mounting substrate 6 on the side of the first main surface 61 closer to the second main surface 62, and mounted on the first main surface 61.

[0069] In addition, Figure 4 The receiving filter 2, denoted as "Rxn" (where n is a natural number), refers to the receiving path P2 of the received signal set in Bandn (see reference). Figure 1 The receiving filter is designated as "Rx30". For example, receiving filter 2, denoted as "Rx30", refers to the receiving filter located on the receiving path P2 of the received signal in Band 30. Similarly, receiving filter 2, denoted as "Rx1 / 3 / 25 / 66", refers to the receiving filter located on the receiving path P2 of the received signals in Bands 1, 3, 25, and 66.

[0070] (3.5) Inductors

[0071] like Figure 3 and Figure 1 As shown, multiple inductors 4 are mounted on the first main surface 61 of the mounting substrate 6. Figure 1 In this example, each inductor 4 is mounted on the first main surface 61 of the mounting substrate 6. Alternatively, in each inductor 4, a portion of the inductor 4 may be mounted on the first main surface 61 of the mounting substrate 6, while the remaining portion of the inductor 4 is embedded within the mounting substrate 6. In summary, each inductor 4 has at least a portion disposed on the mounting substrate 6 on the side of the first main surface 61 closer to the second main surface 62, and mounted on the first main surface 61.

[0072] In addition, Figure 4 The inductor 4, denoted as "Ln" (where n is a natural number), refers to the receiving path P2 of the receiving signal located in Bandn (see reference). Figure 2 The inductor is a type of inductor. For example, inductor 4, denoted as "L1", refers to the inductor located in the receiving path P2 of the receiving signal in Band 1.

[0073] (3.6) IC components

[0074] like Figure 3 and Figure 2 As shown, an IC component 13 is configured to include multiple low-noise amplifiers 3, a first switch 51, and a second switch 52. In other words, the IC component 13 includes multiple low-noise amplifiers 3, a first switch 51, and a second switch 52.

[0075] like Figure 3 andFigure 3 As shown, IC component 13 is mounted on the second main surface 62 of mounting substrate 6. Figure 2 In this example, IC component 13 is disposed on the second main surface 62 of the mounting substrate 6. Alternatively, a portion of IC component 13 may be disposed on the second main surface 62 of the mounting substrate 6, with the remaining portion of IC component 13 embedded within the mounting substrate 6. In summary, IC component 13 has at least a portion located on the second main surface 62 side of the mounting substrate 6, closer to the first main surface 61, and mounted on the second main surface 62.

[0076] (3.7) External connection terminals

[0077] like Figure 3 and Figure 4 As shown, multiple external connection terminals 7 are terminals used to electrically connect the mounting substrate 6 and an external substrate (not shown). Figure 3 As shown, the multiple external connection terminals 7 include an antenna terminal 71, multiple signal input terminals 72, a signal output terminal 73, and a ground terminal (not shown).

[0078] Multiple external connection terminals 7 are disposed on the second main surface 62 side of the mounting substrate 6. The multiple external connection terminals 7 are columnar (e.g., cylindrical) electrodes disposed on the second main surface 62 of the mounting substrate 6. The material of the multiple external connection terminals 7 is, for example, metal (e.g., copper, copper alloy, etc.). Each of the multiple external connection terminals 7 has a base end portion that engages with the second main surface 62 of the mounting substrate 6 in the thickness direction D1 of the mounting substrate 6, and a front end portion opposite to the base end portion. The front end portion of each of the multiple external connection terminals 7 may, for example, include a gold plating layer.

[0079] In the high-frequency module 1, considering the mounting capability from the high-frequency module 1 to the mother substrate (not shown) and the need to increase the number of grounding terminals of the high-frequency module 1, multiple external connection terminals 7 are provided.

[0080] (3.8) First resin layer, second resin layer and shielding layer

[0081] like Figure 3 As shown, a first resin layer 81 is disposed on a first main surface 61 of the mounting substrate 6. The first resin layer 81 covers a plurality of transmitting filters 12, a plurality of receiving filters 2, and a plurality of inductors 4. Here, the first resin layer 81 covers the outer peripheral surfaces of the electronic components (transmitting filters 12, receiving filters 2, inductors 4) and the main surface of the electronic components opposite to the mounting substrate 6 side. The first resin layer 81 comprises resin (e.g., epoxy resin). In addition to resin, the first resin layer 81 may also contain fillers.

[0082] like Figure 3As shown, the second resin layer 82 covers the outer peripheral surfaces of the IC component 13 mounted on the second main surface 62 of the mounting substrate 6 and the respective external connection terminals 7. The second resin layer 82 comprises resin (e.g., epoxy resin). In addition to resin, the second resin layer 82 may also contain fillers. The material of the second resin layer 82 may be the same as or a different material from the first resin layer 81.

[0083] like Figure 1 As shown, shielding layer 83 covers the first resin layer 81. Shielding layer 83 is conductive. In the high-frequency module 1, shielding layer 83 is provided for electromagnetic shielding of the high-frequency module 1 both inside and outside. Shielding layer 83 has a multilayer structure consisting of multiple stacked metal layers, but is not limited to this; it can also be a single metal layer. The metal layer includes one or more metals. Shielding layer 83 covers the main surface of the first resin layer 81 opposite to the mounting substrate 6 side, the outer peripheral surface of the first resin layer 81, and the outer peripheral surface of the mounting substrate 6. In addition, shielding layer 83 also covers the outer peripheral surface of the second resin layer 82. Shielding layer 83 is in contact with at least a portion of the outer peripheral surface of the ground layer of the mounting substrate 6. As a result, the potential of shielding layer 83 can be made the same as the potential of the ground layer.

[0084] (3.9) Configuration Relationship

[0085] like Figure 1 As shown, multiple inductors 4 are mounted together on the first main surface 61 of the mounting substrate 6. A rectangular region A1 is formed in the area where the multiple inductors 4 are located.

[0086] In this embodiment, rectangular region A1 is the smallest rectangular region with the first inductor 4A and the second inductor 4B as diagonals among the plurality of inductors 4. Rectangular region A1 is formed to surround the outer periphery of the first inductor 4A and the second inductor 4B.

[0087] Rectangular region A1 is the area enclosed by four sides A21 to A24. Side A21 is located on the left edge of the leftmost inductor 4 among the multiple inductors 4 in the first direction D21. Side A22 is located on the bottom edge of the bottommost inductor 4 among the multiple inductors 4 in the second direction D22. Side A23 is located on the right edge of the rightmost inductor 4 among the multiple inductors 4 in the first direction D21. Side A24 is located on the top edge of the topmost inductor 4 among the multiple inductors 4 in the second direction D22.

[0088] exist Figure 1 In the example, side A21 is located at inductor 4 in Band 1 ( Figure 1 The “L1”), Band66 inductor 4 ( Figure 1 The “L66”), Band 3 inductor 4 (Figure 1 The “L3”), Band25 inductor 4 ( Figure 1 The “L25”), Band30 inductor 4 ( Figure 1 The “L30”) and the inductor 4 of Band 7 ( Figure 1 On the left edge of “L7”. Edge A22 is located on inductor 4 of Band 7 and inductor 4 of Band 41. Figure 1 On the lower edge of “L41”. Edge A23 is located on inductor 4 of Band 34. Figure 1 The “L34”), Band39 inductor 4 ( Figure 1 The “L39”), Band40 inductor 4 ( Figure 1 The right edge of inductor 4 in Band 41 is located on the right edge of inductor 4 in Band 1 (L40). Edge A24 is located on the upper edge of inductor 4 in Band 1.

[0089] like Figures 1-3 As shown, when viewed from the thickness direction D1 of the mounting substrate 6, the rectangular region A1 containing the plurality of inductors 4 on the first main surface 61 of the mounting substrate 6 overlaps with the IC component 13. Here, the phrase "when viewed from the thickness direction D1 of the mounting substrate 6, the rectangular region A1 overlaps with the IC component 13" includes the following scenarios: the entire rectangular region A1 overlaps with the entire IC component 13; the entire rectangular region A1 overlaps with a portion of the IC component 13; a portion of the rectangular region A1 overlaps with the entire IC component 13; and a portion of the rectangular region A1 overlaps with a portion of the IC component 13. In summary, the phrase "when viewed from the thickness direction D1 of the mounting substrate 6, the rectangular region A1 overlaps with the IC component 13" means "at least a portion of the rectangular region A1 overlaps with at least a portion of the IC component 13."

[0090] Therefore, since the distance between inductor 4 and low-noise amplifier 3 can be made closer in each of the plurality of inductors 4, the total wiring length between inductor 4 and low-noise amplifier 3 can be shortened. Here, the "total wiring length between inductor 4 and low-noise amplifier 3" refers to the total wiring length between inductor 4 and the corresponding low-noise amplifier 3 in each of the plurality of inductors 4. Figure 4 In the above, for ten inductors 4, it is the sum of the wiring lengths between the inductors 4 and the low-noise amplifier 3.

[0091] In each of the four sides A21 to A24 of the rectangular region A1, the electronic component closest to the side of the rectangular region A1 is at least one of the multiple receiving filters 2. Figure 1In the example of FIG. 9, the reception filter 2 is located closest to three of the four sides A21 to A24 of the rectangular region Al. Specifically, the reception filter 2 of Band 1, Band 3, Band 25, and Band 66 ("Rx 1 / 3 / 25 / 66") of the reception filter 2 of Band 30 ("Rx 30") is located closest to the side A21. The reception filter 2 of Band 7 and Band 41 ("Rx 7 / 41") is located closest to the side A22. The reception filter 2 of Band 34 and Band 39 ("Rx 34 / 39") and the reception filter 2 of Band 40 ("Rx 40") is located closest to the side A23. Figure 1 Figure 1 Figure 1 Figure 1 Figure 1

[0092] Thus, since it is possible to make the distance between the reception filter 2 and the inductor 4 close in each of the plurality of inductors 4, it is possible to shorten the sum of the lengths of the wirings between the reception filter 2 and the inductor 4. Here, the "sum of the lengths of the wirings between the reception filter 2 and the inductor 4" is the sum of the lengths of the wirings between the reception filter 2 and the inductor 4 corresponding to the reception filter 2 in each of the plurality of reception filters 2. In the example of FIG. 9, the sum of the lengths of the wirings between the reception filter 2 and the inductor 4 is the sum of the lengths of the wirings between the reception filter 2 and the inductor 4 in the ten reception filters 2. Figure 4

[0093] In addition, the electronic component closest to the side of the rectangular region Al is not only the reception filter 2 that is separated from the sides A21 to A24 of the rectangular region Al when viewed from the thickness direction Dl of the mounting substrate 6, but also includes the reception filter 2 that overlaps at least one of the sides A21 to A24 of the rectangular region Al when viewed from the thickness direction Dl of the mounting substrate 6. In other words, the reception filter 2 that is partially located within the rectangular region Al is also the electronic component closest to the side of the rectangular region Al.

[0094] In addition, when the reception filter 2 overlaps two sides of the rectangular region Al when viewed from the thickness direction Dl of the mounting substrate 6, the reception filter 2 is the electronic component closest to the side having a longer length of the portion overlapping with the reception filter 2 of the two sides.

[0095] In addition, the reception filter 2 of the plurality of reception filters 2 that overlaps the first switch 51 when viewed from the thickness direction Dl of the mounting substrate 6 is the filter through which the reception signal having the highest frequency in the plurality of reception filters 2. In the example of FIG. 9, the reception filter 2 of Band 1, Band 3, Band 25, and Band 66 ("Rx 1 / 3 / 25 / 66") is the filter through which the reception signal having the highest frequency in the plurality of reception filters 2. Figure 1 ​​​​​​In the example, when viewed from above along the thickness direction D1 of the mounting substrate 6, the receiving filter 2 (Band 7, 2620MHz~2690MHz) has the highest frequency. Figure 1 The “Rx7 / 41” overlaps with the first switch 51.

[0096] However, when viewed from the thickness direction D1 of the mounting substrate 6, at least one of the plurality of receiving filters 2 is disposed between the rectangular region A1 and the transmitting filter 12. Figure 1 In the examples, the receiving filter 2 of Band1, Band3, Band25, and Band66 ( Figure 1 The “Rx1 / 3 / 25 / 66”) and the Band30 receiver filter 2 ( Figure 1 The “Rx30” is configured between the rectangular area A1 and the transmitting filter 12.

[0097] Therefore, since the distance between the transmitting path P1, where the transmitting filter 12 is provided, and the inductor 4 provided in the receiving path P2 can be extended, the internal wiring of the transmitting path P1 and the internal wiring of the receiving path P2 can be separated. As a result, the isolation between the transmitting path P1 and the receiving path P2 can be improved. In addition, since shielding can be performed by the receiving filter 2, for example, by forming a metal film on the receiving filter 2, the degradation of the receiving NF caused by transmission can be reduced.

[0098] However, the plurality of receiving filters 2 includes both FDD and TDD receiving filters 2. The FDD receiving filter 2 is disposed between the transmitting filter 12 and the plurality of inductors 4. On the other hand, the TDD receiving filter 2 is disposed between the plurality of inductors 4 and the shielding layer 83 (see reference). Figure 3 Between ) . Figure 1 In the example, the receiving filter 2 (which serves as the communication band for FDD) is used in Band 1, Band 3, Band 25, and Band 66. Figure 1 ("Rx1 / 3 / 25 / 66"), and Band30's receiver filter 2 ( Figure 1 The “Rx30” is positioned between the transmitting filter 12 and the multiple inductors 4. On the other hand, the receiving filter 2 (which serves as the communication band for TDD) is located between Band 34 and Band 39. Figure 1 (Rx34 / 39), and Band40's receiver filter 2 ( Figure 3 The “Rx40” is set in multiple inductors 4 and shielding layer 83 (see reference). Figure 1 )between.

[0099] Therefore, the receiving filter 2 of the FDD can be located near the transmitting filter 12 in the same communication frequency band.Figure 1 In the example, the receiving filter 2, which is a communication band of FDD, including Band 1, Band 3, Band 25, and Band 66, is located in the transmitting filter 12 of Band 1. Figure 1 The “Tx1”) and the transmit filter 12 of Band3 ( Figures 1-3 Near “Tx3”.

[0100] (4) Detailed structure of each component of the high-frequency module

[0101] (4.1) Mounting the substrate

[0102] Figures 1-3 The mounting substrate 6 shown is, for example, a multilayer substrate comprising multiple dielectric layers and multiple conductive layers 63. The multiple dielectric layers and multiple conductive layers 63 are stacked on the thickness direction D1 of the mounting substrate 6. The multiple conductive layers 63 are formed in a predetermined pattern defined for each layer. Each of the multiple conductive layers 63 includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 6. The material of each conductive layer 63 is, for example, copper. The multiple conductive layers 63 include a ground layer. In the high-frequency module 1, multiple external ground terminals and the ground layer are electrically connected via conductive conductors provided by the mounting substrate 6. The mounting substrate 6 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 6 is not limited to an LTCC substrate; for example, it may also be a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

[0103] Furthermore, the mounting substrate 6 is not limited to an LTCC substrate; for example, it can be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. In the case of multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern defined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. In the case of multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern defined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first surface of two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 61 of the mounting substrate 6, and the second surface is the second main surface 62 of the mounting substrate 6. The wiring structure can also be, for example, an interposer. The interposer can be an interposer using a silicon substrate, or it can be a substrate composed of multiple layers.

[0104] The first main surface 61 and the second main surface 62 of the mounting substrate 6 are separated in the thickness direction D1 of the mounting substrate 6 and intersect the thickness direction D1. The first main surface 61 of the mounting substrate 6 is, for example, orthogonal to the thickness direction D1, but it may also include the side surface of the conductor portion, for example, as a surface not orthogonal to the thickness direction D1. Similarly, the second main surface 62 of the mounting substrate 6 is, for example, orthogonal to the thickness direction D1, but it may also include the side surface of the conductor portion, for example, as a surface not orthogonal to the thickness direction D1. Furthermore, the first main surface 61 and the second main surface 62 of the mounting substrate 6 may also have minute irregularities or depressions or protrusions.

[0105] (4.2) Filter

[0106] right Figure 2 The detailed structures of the transmitting filter 12 and the receiving filter 2 shown will be described below. In the following description, the transmitting filter 12 and the receiving filter 2 will be referred to as filters without distinction.

[0107] The filter is a chip-based filter. Here, in the filter, for example, multiple series-arm resonators and multiple parallel-arm resonators are each composed of elastic wave resonators. In this case, the filter, for example, includes a substrate, a piezoelectric layer, and multiple IDT electrodes (Interdigital Transducers). The substrate has a first surface and a second surface. The piezoelectric layer is disposed on the first surface of the substrate. The piezoelectric layer is disposed on a low-velocity sound film. Multiple IDT electrodes are disposed on the piezoelectric layer. Here, the low-velocity sound film is disposed directly or indirectly on the substrate. Additionally, the piezoelectric layer is disposed directly or indirectly on the low-velocity sound film. In the low-velocity sound film, the sound speed of the volume wave propagating in the low-velocity sound film is low compared to the sound speed of the elastic wave propagating in the piezoelectric layer. In the substrate, the sound speed of the volume wave propagating in the substrate is high compared to the sound speed of the elastic wave propagating in the piezoelectric layer. The material of the piezoelectric layer is, for example, lithium tantalate. The material of the low-velocity sound film is, for example, silicon oxide. The substrate is, for example, a silicon substrate. For example, when the wavelength of the elastic wave, defined by the electrode finger period of the IDT electrode, is set to λ, the thickness of the piezoelectric layer is 3.5λ or less. The thickness of the low-velocity film is, for example, 2.0λ or less.

[0108] The piezoelectric layer may be formed from any one of lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, or lead zirconate titanate. Furthermore, the low-velocity film may comprise at least one material selected from the group consisting of silicon oxide, glass, silicon oxynitride, tantalum oxide, and compounds of silicon oxide with added fluorine, carbon, or boron. Additionally, the substrate may comprise at least one material selected from the group consisting of silicon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, sapphire, lithium tantalate, lithium niobate, quartz, aluminum oxide, zirconium oxide, cordierite, mullite, talc, forsterite, magnesium oxide, and diamond.

[0109] The filter also has, for example, a spacer layer and a cover member. The spacer layer and the cover member are provided on the first surface of the substrate. The spacer layer surrounds the plurality of IDT electrodes when viewed from the thickness direction of the substrate. The spacer layer is in a frame shape (a rectangular frame shape) when viewed from the thickness direction of the substrate. The spacer layer has electrical insulation. The material of the spacer layer is, for example, a synthetic resin such as an epoxy resin or a polyimide. The cover member is in a flat plate shape. The cover member is in a rectangular shape when viewed from the thickness direction of the substrate, but is not limited thereto and can be, for example, a square shape. In the filter, the outer dimensions of the cover member, the outer dimensions of the spacer layer, and the outer dimensions of the cover member are substantially the same when viewed from the thickness direction of the substrate. The cover member is disposed on the spacer layer so as to face the substrate in the thickness direction of the substrate. The cover member overlaps the plurality of IDT electrodes in the thickness direction of the substrate and is separated from the plurality of IDT electrodes in the thickness direction of the substrate. The cover member has electrical insulation. The material of the cover member is, for example, a synthetic resin such as an epoxy resin or a polyimide. The filter has a space surrounded by the substrate, the spacer layer, and the cover member. In the filter, a gas enters the space. The gas is, for example, air, an inert gas (for example, nitrogen), or the like. The plurality of terminals are exposed from the cover member. The plurality of terminals are, for example, bumps, respectively. Each of the bumps is, for example, a solder bump. Each of the bumps is not limited to a solder bump and can be, for example, a gold bump.

[0110] The filter can also include, for example, an adhesion layer interposed between the low-velocity sound film and the piezoelectric layer. The adhesion layer is composed of, for example, a resin (an epoxy resin, a polyimide resin). In addition, the filter can have a dielectric film at any one of between the low-velocity sound film and the piezoelectric layer, on the piezoelectric layer, or under the low-velocity sound film.

[0111] In addition, the filter can also have, for example, a high-velocity sound film interposed between the substrate and the low-velocity sound film. Here, the high-velocity sound film is provided directly or indirectly on the substrate. The low-velocity sound film is provided directly or indirectly on the high-velocity sound film. The piezoelectric layer is provided directly or indirectly on the low-velocity sound film. In the high-velocity sound film, the velocity of a bulk wave propagating in the high-velocity sound film is high compared to the velocity of an elastic wave propagating in the piezoelectric layer. In the low-velocity sound film, the velocity of a bulk wave propagating in the low-velocity sound film is low compared to the velocity of an elastic wave propagating in the piezoelectric layer.

[0112] The high-velocity sound film is composed of, for example, a piezoelectric body such as diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, lithium tantalate, lithium niobate, quartz, aluminum oxide, zirconium oxide, cordierite, mullite, talc, forsterite, various ceramics such as magnesium oxide, diamond, or a material in which each of the above materials is a main component or a material in which a mixture of each of the above materials is a main component.

[0113] As for the thickness of the high acoustic velocity film, since the high acoustic velocity film has a function of confining an elastic wave in the piezoelectric layer and the low acoustic velocity film, it is preferable that the thickness of the high acoustic velocity film be thick. The piezoelectric substrate can have a close contact layer, a dielectric film, or the like, in addition to the high acoustic velocity film, the low acoustic velocity film, and the piezoelectric layer.

[0114] The plurality of series arm resonators and the plurality of parallel arm resonators are not limited to the elastic wave resonators described above, and can be, for example, SAW resonators or BAW (Bulk Acoustic Wave) resonators. Here, the SAW resonator includes, for example, a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. In a case where each of the plurality of series arm resonators and the plurality of parallel arm resonators is constituted by a SAW resonator, the filter has, on one piezoelectric substrate, a plurality of IDT electrodes corresponding one-to-one to the plurality of series arm resonators, and a plurality of IDT electrodes corresponding one-to-one to the plurality of parallel arm resonators. The piezoelectric substrate is, for example, a lithium tantalate substrate, a lithium niobate substrate, or the like.

[0115] (4.3) Power amplifier

[0116] Although not shown in Figure 2 , the power amplifier 11 is, for example, an IC having a substrate and an amplification function section in one chip. The substrate has a first surface and a second surface that face each other. The substrate is, for example, a gallium arsenide substrate. The amplification function section includes at least one transistor formed on the first surface of the substrate. The amplification function section is a function section having a function of amplifying a transmission signal of a prescribed frequency band. The transistor is, for example, an HBT (Heterojunction Bipolar Transistor). In the power amplifier 11, a power supply voltage from a power supply circuit (not shown) is applied between a collector and an emitter of the HBT. The power amplifier 11 can include, in addition to the amplification function section, a capacitor for DC cut-off, for example. The power amplifier 11 is, for example, flip-chip mounted on the first main surface 61 of the mounting substrate 6 so that the first surface of the substrate is on the side of the first main surface 61 of the mounting substrate 6. When viewed from the thickness direction D1 of the mounting substrate 6, the outer peripheral shape of the power amplifier 11 is a quadrangular shape.

[0117] (4.4) IC component

[0118] As described above, Figure 2 , the IC component 13 includes the plurality of low noise amplifiers 3, the first switch 51, and the second switch 52. When viewed from the thickness direction D1 of the mounting substrate 6, the outer peripheral shape of the IC component 13 is a quadrangular shape.

[0119] The plurality of low noise amplifiers 3 are, for example, one IC component having a substrate and an amplification function section. The substrate has a first surface and a second surface which face each other. The substrate is, for example, a silicon substrate. The amplification function section is formed on the first surface of the substrate. The amplification function section is a function section having a function of amplifying a received signal of a prescribed frequency band. The low noise amplifier 3 is, for example, flip-chip mounted on the second main surface 62 of the mounting substrate 6 so that the first surface of the substrate becomes the second main surface 62 side of the mounting substrate 6.

[0120] Figure 4 The first switch 51 is, for example, an IC of one chip having a substrate and a switching function section. The substrate has a first surface and a second surface which face each other. The substrate is, for example, a silicon substrate. The switching function section includes a FET (Field Effect Transistor) formed on the first surface of the substrate. The switching function section is a function section having a function of switching a connection state. The first switch 51 is flip-chip mounted on the second main surface 62 of the mounting substrate 6 so that the first surface of the substrate becomes the second main surface 62 side of the mounting substrate 6.

[0121] Figure 1 The second switch 52 is, for example, an IC of one chip having a substrate and a switching function section. The substrate has a first surface and a second surface which face each other. The substrate is, for example, a silicon substrate. The switching function section includes a FET (Field Effect Transistor) formed on the first surface of the substrate. The switching function section is a function section having a function of switching a connection state. The second switch 52 is flip-chip mounted on the second main surface 62 of the mounting substrate 6 so that the first surface of the substrate becomes the second main surface 62 side of the mounting substrate 6.

[0122] (5) Communication device

[0123] As Figure 1 shown, the communication device 9 has the high frequency module 1, an antenna 91, and a signal processing circuit 92.

[0124] (5.1) Antenna

[0125] The antenna 91 is connected to the antenna terminal 71 of the high frequency module 1. The antenna 91 has a transmission function of radiating a transmission signal output from the high frequency module 1 as an electric wave and a reception function of receiving a reception signal as an electric wave from the outside and outputting to the high frequency module 1.

[0126] (5.2) Signal processing circuit

[0127] The signal processing circuit 92 includes an RF signal processing circuit 93 and a baseband signal processing circuit 94. The signal processing circuit 92 processes a signal passing through the high frequency module 1. More specifically, the signal processing circuit 92 processes a transmission signal and a reception signal.

[0128] The RF signal processing circuit 93 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing for a high-frequency signal.

[0129] The RF signal processing circuit 93 performs signal processing on a high-frequency signal output from the baseband signal processing circuit 94, and outputs the high-frequency signal on which the signal processing has been performed to the high-frequency module 1. Specifically, the RF signal processing circuit 93 performs signal processing such as up-conversion on a transmission signal output from the baseband signal processing circuit 94, and outputs the transmission signal on which the signal processing has been performed to the transmission path P1 of the high-frequency module 1.

[0130] The RF signal processing circuit 93 performs signal processing on a high-frequency signal output from the high-frequency module 1, and outputs the high-frequency signal on which the signal processing has been performed to the baseband signal processing circuit 94. Specifically, the RF signal processing circuit 93 performs signal processing on a reception signal output from the reception path P2 of the high-frequency module 1, and outputs the reception signal on which the signal processing has been performed to the baseband signal processing circuit 94.

[0131] The baseband signal processing circuit 94 is, for example, a BBIC (Baseband Integrated Circuit), and performs prescribed signal processing for a transmission signal from the outside of the signal processing circuit 92. A reception signal processed by the baseband signal processing circuit 94 is used, for example, as an image signal for image display, or as a sound signal for a conversation.

[0132] In addition, the RF signal processing circuit 93 also has a function as a control section that controls the connection of the first switch 51 and the second switch 52 possessed by the high-frequency module 1, based on a communication band (frequency band) used. Specifically, the RF signal processing circuit 93 switches the connection of the first switch 51 and the second switch 52 of the high-frequency module 1 by a control signal (not shown). Furthermore, the control section can also be provided outside the RF signal processing circuit 93, and can be provided, for example, in the high-frequency module 1 or the baseband signal processing circuit 94.

[0133] (6) Effects

[0134] In the high-frequency module 1 of the embodiment, when viewed from the thickness direction D1 of the mounting substrate 6, the rectangular region Al containing the plurality of inductors 4 overlaps the IC component 13 containing the low-noise amplifier 3, and each of three or more edges (edges A21 to A23 in the example of Fig. 1) of the four edges A21 to A24 of the rectangular region Al is closest to the edge of the IC component 13. Figure 1 In the example of Fig. 1, the edges A21 to A23) of the IC component 13. Figure 3The electronic component of the example of the side A21 to A23 is at least one of the plurality of reception filters 2. Thereby, since it is possible to shorten the sum of the lengths of the wirings between the reception filters 2 and the inductors 4, and it is possible to shorten the sum of the lengths of the wirings between the inductors 4 and the low-noise amplifiers 3, it is possible to shorten the sum of the lengths of the wirings between the reception filters 2 and the low-noise amplifiers 3. As a result, it is possible to reduce the wiring loss.

[0135] In the high-frequency module 1 of the embodiment, the IC component 13 includes a first switch 51 that switches the reception filter 2 connected to the antenna terminal 71 from among the plurality of reception filters 2. Thereby, since it is possible to shorten the sum of the lengths of the wirings between the first switch 51 and the reception filters 2, it is possible to further shorten the sum of the lengths of the wirings between the reception filters 2 and the low-noise amplifiers 3. As a result, it is possible to further reduce the wiring loss.

[0136] In the high-frequency module 1 of the embodiment, the IC component 13 includes a second switch 52 that switches the low-noise amplifier 3 connected to the signal output terminal 73 from among the plurality of low-noise amplifiers 3. Thereby, compared to the case where the second switch 52 is provided separately from the first switch 51, it is possible to realize the miniaturization of the high-frequency module 1.

[0137] In the high-frequency module 1 of the embodiment, the reception filter 2 of the plurality of reception filters 2 that overlaps with the first switch 51 is the filter of the plurality of reception filters 2 that filters the reception signal of the highest frequency. Thereby, it is possible to shorten the length of the wiring in the reception filter 2 that is easily affected by the wiring loss.

[0138] In the high-frequency module 1 of the embodiment, the rectangular region A1 is the smallest rectangular region that makes the first inductor 4A and the second inductor 4B opposite to each other, and the rectangular region A1 overlaps with the IC component 13 when viewed from the thickness direction D1 of the mounting substrate 6. Thereby, since it is possible to further shorten the sum of the lengths of the wirings between the inductors 4 and the low-noise amplifiers 3, it is possible to further shorten the sum of the lengths of the wirings between the reception filters 2 and the low-noise amplifiers 3. As a result, it is possible to further reduce the wiring loss.

[0139] In the high-frequency module 1 of the embodiment, at least one of the plurality of reception filters 2 is arranged between the rectangular region Al including the plurality of inductors 4 and the transmission filter 12 when viewed from the thickness direction Dl of the mounting substrate 6. Thereby, since it is possible to extend the distance between the transmission path Pl in which the transmission filter 12 is provided and the inductor 4 provided in the reception path P2, it is possible to separate the internal wiring of the transmission path Pl and the internal wiring of the reception path P2. As a result, it is possible to improve the isolation between the transmission path Pl and the reception path P2. In addition, since it is possible to shield with the reception filter 2, for example, by forming a metal film on the reception filter 2, it is possible to reduce the degradation of the reception NF caused by transmission.

[0140] In the high-frequency module 1 of the embodiment, the reception filter of the FDD is arranged between the transmission filter 12 and the plurality of inductors 4, and the reception filter 2 of the TDD is arranged between the plurality of inductors 4 and the shielding layer 83. Thereby, the reception filter 2 of the FDD can be located in the vicinity of the transmission filter 12 of the same communication band.

[0141] In the high-frequency module 1 of the embodiment, at least one of the plurality of reception filters 2 is arranged in each of three or more sides (sides A21 to A23 in the example of Figure 5 the embodiment) of the four sides A21 to A24 of the rectangular region Al, which are closest to the sides (sides A21 to A23 in the example of Figure 3 the embodiment) of the rectangular region Al. Thereby, since it is possible to separate the distance between the inductor 4 and the shielding layer 83, it is possible to reduce the degradation of the Q value caused by the interference between the inductor 4 and the shielding layer 83.

[0142] (7) Modification

[0143] Hereinafter, a modification of the embodiment will be described.

[0144] (7.1) Modification 1

[0145] As the modification 1 of the embodiment, the high-frequency module la can also be provided with a plurality of external connection terminals 7a as shown in FIG. 17 instead of the plurality of external connection terminals 7 (refer to FIG. 1) of the high-frequency module 1 of the embodiment. ​ ​

[0146] The plurality of external connection terminals 7a are not columnar electrodes but have a bump structure. The plurality of external connection terminals 7a are arranged on the second main surface 62 of the mounting substrate 6. In the high-frequency module la of the modification 1, the second resin layer 82 (refer to FIG. 1) is omitted. ​

[0147] (7.2) Modification 2

[0148] ​​​As a modification 2 of the embodiment, in the high-frequency module 1, the electronic component closest to the edge of the rectangular region Al can be at least one of the plurality of reception filters 2 among all the edges A21 to A24 of the rectangular region Al.

[0149] According to the high-frequency module 1 of the modification 2, since it is possible to separate the distance between the inductor 4 and the shielding layer 83 among all the edges A21 to A24 of the rectangular region Al, it is possible to reduce the degradation of the Q value caused by the interference between the inductor 4 and the shielding layer 83.

[0150] (7.3) Other Modifications

[0151] As another modification of the embodiment, the plurality of transmission filters 12 can not be limited to the elastic surface wave filter, and can be a filter other than the elastic surface wave filter. The transmission filter 12 can be, for example, any one of an elastic wave filter using a BAW (Bulk Acoustic Wave), an LC resonant filter, and a dielectric filter.

[0152] In the high-frequency module of each of the above-described modifications, the same effects as the high-frequency module 1 of the embodiment are exerted.

[0153] In the above-described embodiment and modifications, the so-called "A is mounted on the first main surface of the mounting substrate" means not only that A is directly mounted on the first main surface of the mounting substrate, but also that A is disposed in the space on the first main surface side among the space on the first main surface side and the space on the second main surface side separated by the mounting substrate. In other words, A is mounted on the first main surface via other circuit elements, electrodes, or the like is included.

[0154] The above-described embodiment and modifications are only a part of various embodiments and modifications of the present application. In addition, the embodiment and the modification can be variously changed according to design or the like as long as the object of the present application can be achieved.

[0155] (Modes)

[0156] In the present specification, the following modes are disclosed.

[0157] The high-frequency module (1; la) of the first aspect includes a mounting substrate (6), a plurality of inductors (4), a plurality of reception filters (2), and an IC component (13). The mounting substrate (6) has a first main surface (61) and a second main surface (62) that face each other. The plurality of inductors (4) are mounted on the first main surface (61) of the mounting substrate (6). The plurality of reception filters (2) are mounted on the first main surface (61) of the mounting substrate (6). The IC component (13) is mounted on the second main surface (62) of the mounting substrate (6) and includes a low-noise amplifier (3). Each of the plurality of inductors (4) corresponds to a part of the plurality of reception filters (2) and is connected to the corresponding reception filter (2) and the low-noise amplifier (3). When viewed from the thickness direction (D1) of the mounting substrate (6), a rectangular region (A1) in which the plurality of inductors (4) are present overlaps the IC component (13). In each of three or more sides of four sides (A21 to A24) of the rectangular region (A1), an electronic component closest to the side of the rectangular region (A1) is at least one reception filter (2) of the plurality of reception filters (2).

[0158] According to the high-frequency module (1; la) of the first aspect, since it is possible to shorten the sum of the lengths of the wirings between the reception filters (2) and the inductors (4) and the sum of the lengths of the wirings between the inductors (4) and the low-noise amplifier (3), it is possible to shorten the sum of the lengths of the wirings between the reception filters (2) and the low-noise amplifier (3). As a result, it is possible to reduce the wiring loss.

[0159] The high-frequency module (1; la) of the second aspect further includes an antenna terminal (71) in the high-frequency module (1; la) of the first aspect. The IC component (13) further includes a first switch (51). The first switch (51) switches the reception filter (2) connected to the antenna terminal (71) from among the plurality of reception filters (2).

[0160] According to the high-frequency module (1; la) of the second aspect, since it is possible to shorten the sum of the lengths of the wirings between the first switch (51) and the reception filters (2), it is possible to further shorten the sum of the lengths of the wirings between the reception filters (2) and the low-noise amplifier (3). As a result, it is possible to further reduce the wiring loss.

[0161] The high-frequency module (1; la) of the third aspect further includes a signal output terminal (73) in the high-frequency module (1; la) of the second aspect. The signal output terminal (73) is a terminal that outputs a reception signal to an external circuit. The IC component (13) includes a plurality of low-noise amplifiers (3). The IC component (13) further includes a second switch (52). The second switch (52) switches the low-noise amplifier (3) connected to the signal output terminal (73) from among the plurality of low-noise amplifiers (3).

[0162] According to the high-frequency module (1; la) of the third aspect, compared with the case where the second switch (52) is provided separately from the first switch (51), it is possible to realize the downsizing of the high-frequency module (1; la).

[0163] In the high-frequency module (1; la) of the fourth aspect, in the second aspect or the third aspect, among the plurality of reception filters (2), the reception filter (2) that overlaps the first switch (51) when viewed from the thickness direction (D1) of the mounting substrate (6) is the filter that passes the reception signal having the highest frequency among the plurality of reception filters (2).

[0164] According to the high-frequency module (1; la) of the fourth aspect, it is possible to shorten the lengths of the wirings in the reception filter (2) that is susceptible to the influence of the wiring loss.

[0165] In the high-frequency module (1; la) of the fifth aspect, in any one of the first aspect to the fourth aspect, the plurality of inductors (4) include a first inductor (4A) and a second inductor (4B). The rectangular region (Al) is the smallest rectangular region in which the first inductor (4A) and the second inductor (4B) are diagonal. The rectangular region (Al) overlaps the IC component (13) when viewed from the thickness direction (D1) of the mounting substrate (6).

[0166] According to the high-frequency module (1; la) of the fifth aspect, since it is possible to further shorten the sum of the lengths of the wirings between the inductor (4) and the low-noise amplifier (3), it is possible to further shorten the sum of the lengths of the wirings between the reception filter (2) and the low-noise amplifier (3). As a result, it is possible to further reduce the wiring loss.

[0167] The high-frequency module (1; la) of the sixth aspect further includes a transmission filter (12) in any one of the first aspect to the fifth aspect. The transmission filter (12) is mounted to the first main surface (61) of the mounting substrate (6). At least one of the plurality of reception filters (2) is disposed between the rectangular region (Al) and the transmission filter (12) when viewed from the thickness direction (D1) of the mounting substrate (6).

[0168] According to the high-frequency module (1; la) of the sixth aspect, since it is possible to lengthen the distance between the transmission path (Pl) in which the transmission filter (12) is provided and the inductor (4) provided in the reception path (P2), it is possible to separate the internal wirings of the transmission path (Pl) and the internal wirings of the reception path (P2). As a result, it is possible to improve the isolation between the transmission path (Pl) and the reception path (P2). In addition, for example, by forming a metal film on the reception filter (2), it is possible to shield using the reception filter (2), so that the degradation of the reception NF caused by the transmission is reduced.

[0169] The high-frequency module (1; la) of the seventh aspect further includes a shield layer (83) in the high-frequency module (1; la) of the sixth aspect. The plurality of reception filters (2) includes a reception filter for FDD and a reception filter dedicated to reception. The reception filter for FDD is disposed between the transmission filter (12) and the plurality of inductors (4). The reception filter dedicated to reception is disposed between the plurality of inductors (4) and the shield layer (83).

[0170] According to the high-frequency module (1; la) of the seventh aspect, it is possible to position the reception filter (2) for FDD in the vicinity of the transmission filter (12) of the same communication band.

[0171] In the high-frequency module (1; la) of the eighth aspect, in any one of the first to seventh aspects, the electronic component closest to the side of the rectangular region (Al) is at least one of the plurality of reception filters (2) in all of the four sides (A21 to A24) of the rectangular region (Al).

[0172] According to the high-frequency module (1; la) of the eighth aspect, it is possible to reduce degradation of the Q value caused by interference between the inductor (4) and the shield layer (83).

[0173] The communication device (9) of the ninth aspect includes: the high-frequency module (1; la) of any one of the first to eighth aspects; and a signal processing circuit (92). The signal processing circuit (92) processes a signal passing through the high-frequency module (1; la).

[0174] According to the communication device (9) of the ninth aspect, since it is possible to shorten the sum of the lengths of the wirings between the reception filter (2) and the inductor (4) and the sum of the lengths of the wirings between the inductor (4) and the low-noise amplifier (3) in the high-frequency module (1; la), it is possible to shorten the sum of the lengths of the wirings between the reception filter (2) and the low-noise amplifier (3). As a result, it is possible to reduce wiring loss.

[0175] Explanation of Reference Numerals

[0176] 1, 1a … high frequency module; 11 … power amplifier; 12 … transmission filter; 13 … IC component; 2 … reception filter; 3 … low noise amplifier; 4 … inductor; 4A … first inductor; 4B … second inductor; 51 … first switch; 511 … common terminal; 512 … selection terminal; 52 … second switch; 521 … common terminal; 522 … selection terminal; 6 … mounting substrate; 61 … first main surface; 62 … second main surface; 63 … conductive layer; 64 … through electrode; 7, 7a … external connection terminal; 71 … antenna terminal; 72 … signal input terminal; 73 … signal output terminal; 81 … first resin layer; 82 … second resin layer; 83 … shield layer; 9 … communication device; 91 … antenna; 92 … signal processing circuit; 93 … RF signal processing circuit; 94 … baseband signal processing circuit; A1 … rectangular region; A21 to A24 … side; P1 … transmission path; P2 … reception path; D1 … thickness direction; D21 … first direction; D22 … second direction.

Claims

1. A high-frequency module comprising: a mounting substrate having first and second main surfaces facing each other; a plurality of inductors mounted on the first main surface of the mounting substrate; a plurality of reception filters mounted on the first main surface of the mounting substrate; and an IC component mounted on the second main surface of the mounting substrate and including a low-noise amplifier, each of the plurality of inductors corresponds to a part of the plurality of reception filters, and is connected to the corresponding reception filter and the low-noise amplifier, a rectangular region in which the plurality of inductors are present overlaps the IC component when viewed in a thickness direction of the mounting substrate, with respect to each of three or more sides of four sides of the rectangular region, an electronic component closest to the side of the rectangular region is at least one reception filter of the plurality of reception filters, and the plurality of reception filters are mounted outside the rectangular region when viewed in the thickness direction of the mounting substrate.

2. The high-frequency module according to claim 1, further comprising an antenna terminal, wherein the IC component further includes a first switch that switches a reception filter connected to the antenna terminal from among the plurality of reception filters.

3. The high-frequency module according to claim 2, further comprising a signal output terminal that outputs a reception signal to an external circuit, wherein the IC component includes a plurality of the low-noise amplifiers, and the IC component further includes a second switch that switches a low-noise amplifier connected to the signal output terminal from among the plurality of low-noise amplifiers.

4. The high-frequency module according to claim 2 or 3, wherein a reception filter of the plurality of reception filters that overlaps the first switch when viewed in the thickness direction of the mounting substrate is a filter that filters a reception signal having the highest frequency among the plurality of reception filters.

5. The high-frequency module according to any one of claims 1 to 3, wherein the plurality of inductors include: a first inductor; and a second inductor, the rectangular region is a smallest rectangular region in which the first inductor and the second inductor are diagonal, and the rectangular region overlaps the IC component when viewed in the thickness direction of the mounting substrate.

6. The high-frequency module according to any one of claims 1 to 3, wherein with respect to all of the four sides of the rectangular region, the electronic component closest to the side of the rectangular region is at least one reception filter of the plurality of reception filters.

7. A high-frequency module comprising: a mounting substrate having first and second main surfaces facing each other; a plurality of inductors mounted on the first main surface of the mounting substrate; a plurality of reception filters mounted on the first main surface of the mounting substrate; and an IC component mounted on the second main surface of the mounting substrate and including a low-noise amplifier, each of the plurality of inductors corresponds to a part of the plurality of reception filters, and is connected to the corresponding reception filter and the low-noise amplifier, ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ In a plan view from a thickness direction of the mounting substrate, a rectangular region where the plurality of inductors are present overlaps the IC component, With respect to each of three or more edges of the four edges of the rectangular region, the electronic component closest to the edge of the rectangular region is at least one of the plurality of reception filters, The high-frequency module further includes a transmission filter mounted to the first main surface of the mounting substrate, In a plan view from a thickness direction of the mounting substrate, at least one of the plurality of reception filters is disposed between the rectangular region and the transmission filter.

8. The high-frequency module according to claim 7, wherein The high-frequency module further includes a shield layer, The plurality of reception filters include: a reception filter for FDD; and a reception filter for TDD, The reception filter for FDD is disposed between the transmission filter and the plurality of inductors, The reception filter for TDD is disposed between the plurality of inductors and the shield layer.

9. The high-frequency module according to claim 7 or 8, wherein With respect to all of the four edges of the rectangular region, the electronic component closest to the edge of the rectangular region is at least one of the plurality of reception filters.

10. A communication device including: the high-frequency module according to any one of claims 1 to 9; and a signal processing circuit that processes a signal passing through the high-frequency module.

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