A method for preparing a high-current pulsed electron beam enhanced HEA transition layer and its HECs / ta-C composite multi-layer structure

Abstract

A method for preparing a high-current pulsed electron beam-enhanced HEA transition layer and a HECs / ta-C composite multilayer structure thereof, wherein a HEA / (HECs / ta-C)n composite coating is formed by forming a high-entropy alloy (HEA) transition layer, strengthening the HEA transition layer surface, and alternating HECs / ta-C multilayer growth. The preparation method comprises: (1) substrate pretreatment, Ar ion cleaning, and target pre-sputtering; (2) preparing the HEA transition layer AlTiVCrZr by magnetron sputtering; (3) strengthening the transition layer by HCPEB; (4) depositing an (AlTiVCrZr)C layer on the strengthened AlTiVCrZr transition layer by magnetron sputtering; (5) further depositing ta-C on the (AlTiVCrZr)C layer by filtered cathode vacuum arc method; and (6) repeating operations (4) and (5) to obtain an alternating (AlTiVCrZr)C / ta-C multilayer coating. The HECs / ta-C composite multilayer toughened wear-resistant coating of the present invention has high hardness, high toughness and excellent wear resistance.

Description

Technical Field

[0001] The present invention relates to a multi-layer toughened wear-resistant coating and a preparation method thereof, in particular to a high-current pulsed electron beam enhanced HEA transition layer and a preparation method thereof of a HECs / ta-C composite multi-layer structure, belonging to the technical field of physical vapor deposition. Background Art

[0002] As high-end manufacturing sectors like aerospace, marine, and high-speed rail move toward low weight, high load capacity, and high strength, new, difficult-to-machine materials like titanium alloys and carbon fiber-reinforced composites are finding widespread use. For example, the A350 utilizes over 53% of carbon fiber-reinforced composites. However, this presents challenges. Traditional cutting tools made of high-speed steel and carbide suffer from high wear, low efficiency, and short lifespan when machining these new, difficult-to-machine materials, making them difficult to meet the high-efficiency, high-precision machining requirements of high-end manufacturing. Therefore, coated cutting tools that combine high hardness, toughness, and excellent wear resistance have become the preferred choice.

[0003] Tetrahedral amorphous carbon (ta-C) coatings offer excellent properties such as high hardness, wear resistance, and low friction, making them ideal coatings for cutting tools. However, the high stress and brittleness of ta-C coatings, which can easily lead to cracking and even flaking, have limited their widespread application in cutting tools.

[0004] The present invention preferably uses high entropy alloys (HEA) as a transition layer and uses a high current pulsed electron beam (HCPEB) to strengthen the surface of the HEA to fully utilize the high entropy effect of HEA. At the same time, high entropy ceramics (HECs) with both hardness and toughness are designed to construct an HECs / ta-C multilayer toughening structure system, which solves the problems of high stress and high brittleness of the ta-C coating, thereby effectively improving the tool durability. Summary of the Invention

[0005] The purpose of the present invention is to address the high stress and high brittleness problems of existing ta-C coatings and to invent a high-current pulsed electron beam enhanced HEA transition layer and a method for preparing the HECs / ta-C composite multilayer structure.

[0006] The technical solution of the present invention is:

[0007] A method for preparing a high-current pulsed electron beam enhanced HEA transition layer and a HECs / ta-C composite multilayer structure thereof, characterized by comprising the following steps:

[0008] Step 1: pre-treating the substrate surface, Ar ion cleaning and target pre-sputtering;

[0009] Step 2: Using magnetron sputtering, an alloy target containing five elements of AlTiVCrZr is used, and argon gas is introduced to prepare an AlTiVCrZr transition layer on the substrate surface;

[0010] Step 3: Using HCPEB method to strengthen the AlTiVCrZr transition layer;

[0011] Step 4: Using magnetron sputtering, a mixed alloy target of five elements AlTiVCrZr is used, and methane and argon are introduced to further deposit the (AlTiVCrZr)C layer;

[0012] Step 5: Using a filtered cathode vacuum arc method with a graphite target and argon gas, ta-C is further deposited on the (AlTiVCrZr)C layer;

[0013] Step 6: Repeat the operations of steps 4 and 5 to obtain a (AlTiVCrZr)C / ta-C multi-layer alternating coating.

[0014] In the step 1, the substrate surface is pretreated and polished with 600#~1500# sandpaper in sequence, and then mechanically polished to a mirror state with W0.5~2.5 diamond grinding paste. The surface roughness of the substrate after polishing is Ra≤40nm. The polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 10~20min each, and then blown dry with dry argon gas. The substrate is then placed in a vacuum furnace for Ar ion cleaning, the anode source is turned on, the average current is 0.1~0.2A, the substrate bias is -200~-300V, the flow rate of Ar gas is 25~60sccm, the working pressure is maintained at 0.6Pa~0.9Pa, and the cleaning time is 5~10min. Finally, the target material is pre-sputtered with an average current of 0.1A and a duration of 2min.

[0015] In the step 2, for the preparation of the AlTiVCrZr transition layer, the Ar gas flow rate is 25-60 sccm, the working gas pressure is maintained at 0.6Pa-0.9Pa, the substrate bias is 0-200V, the target average current is 0.15-0.3A, and the deposition time is 5-10min.

[0016] In the step 3, for strengthening the AlTiVCrZr transition layer, the vacuum degree P is selected to be ≤ 8×10 -3 Pa, electron beam energy is 15-40 KeV, energy density is 4-10 J / cm², working distance is 10-30 cm, and bombardment times is 10-50 times.

[0017] In the step 4, for the preparation of the (AlTiVCrZr)C layer, the argon flow rate is 85~95sccm, the methane flow rate is 5~15sccm, of which the methane flow rate accounts for 5%~15%, the working gas pressure is maintained at 0.6Pa~0.9Pa, the substrate bias is 0~-200V, the target average current is 0.3~0.5A, and the deposition time is 1~60min.

[0018] In the step 5 for the preparation of the ta-C layer, the target material is a graphite target with a purity of 99.999%, the target current is 45~60A, the argon flow rate is 5~10sccm, the working gas pressure is maintained at 0.6Pa~0.9Pa, the substrate bias is 50~200V, the substrate bias current is 0.3~0.5A, and the deposition time is 1~60min.

[0019] The HEA layer is composed of Al, Ti, V, Cr, and Zr elements, and the HECs layer is composed of Al, Ti, V, Cr, Zr, and C elements.

[0020] The thickness of the HEA strengthening transition layer AlTiVCrZr is 250nm-500nm, the total thickness of the HECs / ta-C multilayer alternating coating is 1-10μm, and each layer is controlled at 5nm-1200nm.

[0021] The outermost layer of the HECs / ta-C composite multi-layer toughening and wear-resistant coating is a ta-C layer.

[0022] Beneficial effects of the present invention:

[0023] The HEA transition layer is deposited and strengthened on the substrate surface by magnetron sputtering and HCPEB. The HEA transition layer can improve the bonding strength between the film and the substrate, effectively relieve the mismatch stress at the film-substrate interface, and play a good supporting role for the coating.

[0024] The HECs / ta-C multilayer alternating coating provided by the present invention has high hardness, strong toughness and excellent wear resistance, and the modulation ratio and modulation period are adjustable.

[0025] The preparation method of the HEA transition layer and the HECs / ta-C multilayer alternating coating adopts the steps of the magnetron sputtering method, and can also be prepared using the filtered cathode vacuum arc method. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Flow chart for preparing HECs / ta-C composite multilayer toughened and wear-resistant coating.

[0027] Figure 2 Schematic diagram of the structure of the HECs / ta-C composite multilayer toughened and wear-resistant coating.

[0028] Figure 3 This is the XRD pattern of (AlTiVCrZr)C layer.

[0029] Figure 4 is the Raman spectrum of the ta-C layer.

[0030] Figure 5 This is the surface morphology of the HECs / ta-C composite multilayer toughened and wear-resistant coating. DETAILED DESCRIPTION

[0031] The present invention will be further described below with reference to the accompanying drawings and examples. Example 1

[0032] like Figure 1-5 shown.

[0033] A coating of alternating HECs and ta-C layers, such as Figure 1 As shown, it is prepared by the following steps:

[0034] Step 1: Pre-treat the substrate surface and polish it with 600#, 800#, 1200# and 1500# sandpaper in sequence, and then use W1.5 diamond grinding paste for mechanical polishing to a mirror state. After polishing, the surface roughness of the substrate is Ra≤40nm. The polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 15 minutes each, and then blown dry with dry argon. Then place the substrate in a vacuum furnace for Ar ion cleaning, turn on the anode source, the average current is 0.15A, the substrate bias is -250V, the Ar gas flow rate is 40sccm, the working gas pressure is maintained at 0.75Pa, and the cleaning time is 5min. Finally, the target material is pre-sputtered with an average current of 0.1A and a duration of 2min.

[0035] Step 2: Use magnetron sputtering method to prepare AlTiVCrZr transition layer on the substrate surface with an alloy target composed of an equimolar mixture of five elements AlTiVCrZr and introduce argon gas with an argon flow rate of 40sccm, a working pressure of 0.75Pa, a substrate bias of -150V, and an average target current of 0.3A. The deposition time is 10min.

[0036] Step 3: Use HCPEB method to strengthen the surface of AlTiVCrZr transition layer; select vacuum degree P≤8×10 - 3 Pa, electron beam energy is 30KeV, energy density is 6J / cm², working distance is 20cm, and bombardment times is 25 times.

[0037] Step 4: Use magnetron sputtering method, use an alloy target with an equimolar mixture of five elements of AlTiVCrZr, and introduce methane and argon. The argon flow rate is 85sccm, the methane flow rate is 15sccm, and the methane flow rate accounts for 15%. The working gas pressure is maintained at 0.75Pa, the substrate bias is -150V, the target average current is 0.4A, and the (AlTiVCrZr)C layer is further deposited on the surface for 15min.

[0038] Step 5: Using the filtered cathode vacuum arc method, a 99.999% pure graphite target is used with a target current of 60 A, and argon is introduced with a flow rate of 5 sccm. The working pressure is maintained at 0.75 Pa, the substrate bias voltage is 200 V, the substrate bias current is 0.4 A, and ta-C is further deposited on the (AlTiVCrZr)C layer for 60 min.

[0039] Step 6: Repeat steps 4 and 5 once to obtain a HECs / ta-C multilayer alternating coating, such as Figure 2 shown.

[0040] The thickness of the AlTiVCrZr transition layer in the obtained HECs / ta-C composite multilayer toughened and wear-resistant coating is 500nm, the thickness of each (AlTiVCrZr)C layer is 300nm, the thickness of each ta-C layer is 300nm, and the total thickness is 1.7μm.

[0041] The XRD pattern of (AlTiVCrZr)C layer is as follows Figure 3 As shown. The Raman spectrum of the ta-C layer is shown Figure 4 As shown in the figure, the surface morphology of HECs / ta-C composite multilayer toughened wear-resistant coating is as follows Figure 5 shown. Example 2

[0042] like Figure 1-5 shown.

[0043] A multi-layer alternating coating of HECs and ta-C is prepared by the following steps:

[0044] Step 1: Pre-treat the substrate surface and polish it with 600#, 800#, 1200# and 1500# sandpaper in sequence, and then use W1.5 diamond grinding paste for mechanical polishing to a mirror state. After polishing, the surface roughness of the substrate is Ra≤40nm. The polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 15 minutes each, and then blown dry with dry argon. Then place the substrate in a vacuum furnace for Ar ion cleaning, turn on the anode source, the average current is 0.15A, the substrate bias is -250V, the Ar gas flow rate is 40sccm, the working gas pressure is maintained at 0.75Pa, and the cleaning time is 5min. Finally, the target material is pre-sputtered with an average current of 0.1A and a duration of 2min.

[0045] Step 2: Use magnetron sputtering to prepare an AlTiVCrZr transition layer on the substrate surface using an alloy target composed of a mixture of five elements: AlTiVCrZr (the atomic percentage of Al is 35%, the atomic percentages of Ti, V, and Cr are 20%, and the atomic percentage of Zr is 5%, which can also be adjusted by yourself, the same below), and introduce argon gas with a flow rate of 40 sccm. The working gas pressure is maintained at 0.75 Pa, the substrate bias is -150 V, the target average current is 0.3 A, and the deposition time is 10 min.

[0046] Step 3: Use HCPEB method to strengthen the surface of AlTiVCrZr transition layer; select vacuum degree P≤8×10 - 3 Pa, electron beam energy is 30KeV, energy density is 6J / cm², working distance is 20cm, and bombardment times is 25 times.

[0047] Step 4: Use magnetron sputtering method, use an alloy target with an equimolar mixture of five elements of AlTiVCrZr, and introduce methane and argon. The argon flow rate is 85sccm, the methane flow rate is 15sccm, and the methane flow rate accounts for 15%. The working gas pressure is maintained at 0.75Pa, the substrate bias is -150V, the target average current is 0.4A, and the (AlTiVCrZr)C layer is further deposited on the surface for 15min.

[0048] Step 5: Using the filtered cathode vacuum arc method, a 99.999% pure graphite target is used with a target current of 60 A, and argon is introduced with a flow rate of 5 sccm. The working pressure is maintained at 0.75 Pa, the substrate bias voltage is 200 V, the substrate bias current is 0.4 A, and ta-C is further deposited on the (AlTiVCrZr)C layer for 60 min.

[0049] Step 6: Repeat steps 4 and 5 twice to obtain a HECs / ta-C multilayer alternating coating.

[0050] The thickness of the AlTiVCrZr transition layer in the obtained HECs / ta-C composite multilayer toughened and wear-resistant coating is 500nm, the thickness of each (AlTiVCrZr)C layer is 300nm, the thickness of each ta-C layer is 300nm, and the total thickness is 2.3μm. Example 3

[0051] like Figure 1-5 shown.

[0052] A multi-layer alternating coating of HECs and ta-C is prepared by the following steps:

[0053] Step 1: Pre-treat the substrate surface and polish it with 600#, 800#, 1200# and 1500# sandpaper in sequence, and then use W1.5 diamond grinding paste for mechanical polishing to a mirror state. After polishing, the surface roughness of the substrate is Ra≤40nm. The polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 15 minutes each, and then blown dry with dry argon. Then place the substrate in a vacuum furnace for Ar ion cleaning, turn on the anode source, the average current is 0.15A, the substrate bias is -250V, the Ar gas flow rate is 40sccm, the working gas pressure is maintained at 0.75Pa, and the cleaning time is 5min. Finally, the target material is pre-sputtered with an average current of 0.1A and a duration of 2min.

[0054] Step 2: Use magnetron sputtering to prepare an AlTiVCrZr transition layer on the substrate surface using an alloy target composed of a mixture of five elements: AlTiVCrZr (35% atomic percentage of Cr, 20% atomic percentage of Al, Ti, and V, and 5% atomic percentage of Zr), and introduce argon gas with a flow rate of 40 sccm. The working gas pressure is maintained at 0.75 Pa, the substrate bias is -150 V, the target average current is 0.3 A, and the deposition time is 5 minutes.

[0055] Step 3: Use HCPEB method to strengthen the surface of AlTiVCrZr transition layer; select vacuum degree P≤8×10 - 3 Pa, electron beam energy is 30KeV, energy density is 6J / cm², working distance is 20cm, and bombardment times is 25 times.

[0056] Step 4: Use magnetron sputtering method, use an alloy target with an equimolar mixture of five elements of AlTiVCrZr, and introduce methane and argon. The argon flow rate is 85sccm, the methane flow rate is 15sccm, and the methane flow rate accounts for 15%. The working gas pressure is maintained at 0.75Pa, the substrate bias is -150V, the target average current is 0.4A, and the (AlTiVCrZr)C layer is further deposited on the surface for 5min.

[0057] Step 5: Using the filtered cathode vacuum arc method, a 99.999% pure graphite target is used with a target current of 60A, and argon is introduced with a flow rate of 5sccm. The working gas pressure is maintained at 0.75Pa, the substrate bias voltage is 200V, the substrate bias current is 0.4A, and ta-C is further deposited on the (AlTiVCrZr)C layer for 10min.

[0058] Step 6: Repeat steps 4 and 5 nine times to obtain a HECs / ta-C multilayer alternating coating.

[0059] The thickness of the AlTiVCrZr transition layer in the obtained HECs / ta-C composite multilayer toughened and wear-resistant coating is 250nm, the thickness of each (AlTiVCrZr)C layer is 100nm, the thickness of each ta-C layer is 50nm, and the total thickness is 1.75μm. Example 4

[0060] like Figure 1-5 shown.

[0061] A multi-layer alternating coating of HECs and ta-C is prepared by the following steps:

[0062] Step 1: Pre-treat the substrate surface and polish it with 600#, 800#, 1200# and 1500# sandpaper in sequence, and then use W0.5 diamond grinding paste for mechanical polishing to a mirror state. The surface roughness of the substrate after polishing is Ra≤40nm. The polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 20 minutes each, and then blown dry with dry argon gas. Then place the substrate in a vacuum furnace for Ar ion cleaning, turn on the anode source, the average current is 0.2A, the substrate bias is -200V, the Ar gas flow rate is 25sccm, the working gas pressure is maintained at 0.6Pa, and the cleaning time is 10min. Finally, pre-sputter the target material with an average current of 0.1A and a duration of 2min.

[0063] Step 2: Use magnetron sputtering to prepare an AlTiVCrZr transition layer on the substrate surface with an alloy target composed of a mixture of five elements: AlTiVCrZr (35% atomic percentage of Zr, 20% atomic percentage of Cr, and 15% atomic percentage of Al, Ti, and V). Argon gas is introduced with a flow rate of 25 sccm. The working pressure is maintained at 0.6 Pa, the substrate bias is 0 V, and the target average current is 0.15 A. The deposition time is 10 min.

[0064] Step 3: Use HCPEB method to strengthen the surface of AlTiVCrZr transition layer; select vacuum degree P≤8×10 - 3Pa, electron beam energy is 15KeV, energy density is 10J / cm², working distance is 10cm, and bombardment times is 10 times.

[0065] Step 4: Use magnetron sputtering method to use an alloy target with an equimolar mixture of five elements of AlTiVCrZr, and introduce methane and argon. The argon flow rate is 95sccm, the methane flow rate is 5sccm, and the methane flow rate accounts for 5%. The working gas pressure is maintained at 0.6Pa, the substrate bias is 0V, the target average current is 0.3A, and the (AlTiVCrZr)C layer is further deposited on the surface for 1min.

[0066] Step 5: Using the filtered cathode vacuum arc method, a 99.999% pure graphite target is used with a target current of 45A, and argon is introduced with a flow rate of 10sccm. The working gas pressure is maintained at 0.6Pa, the substrate bias voltage is 50V, the substrate bias current is 0.3A, and ta-C is further deposited on the (AlTiVCrZr)C layer for 1min.

[0067] Step 6: Repeat steps 4 and 5 31 times to obtain a HECs / ta-C multilayer alternating coating.

[0068] The thickness of the AlTiVCrZr transition layer in the obtained HECs / ta-C composite multilayer toughened and wear-resistant coating is 360nm, the thickness of each (AlTiVCrZr)C layer is 15nm, the thickness of each ta-C layer is 5nm, and the total thickness is 1μm. Example 5

[0069] like Figure 1-5 shown.

[0070] A multi-layer alternating coating of HECs and ta-C is prepared by the following steps:

[0071] Step 1: Pre-treat the substrate surface and polish it with 600#, 800#, 1200# and 1500# sandpaper in sequence, and then use W2.5 diamond grinding paste for mechanical polishing to a mirror state. The surface roughness of the substrate after polishing is Ra≤40nm. The polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 10 minutes each, and then blown dry with dry argon. Then place the substrate in a vacuum furnace for Ar ion cleaning, turn on the anode source, the average current is 0.1, the substrate bias is -300V, the Ar gas flow rate is 60sccm, the working gas pressure is maintained at 0.9Pa, and the cleaning time is 10min. Finally, the target material is pre-sputtered with an average current of 0.1A and a duration of 2min.

[0072] Step 2: Use magnetron sputtering to prepare an AlTiVCrZr transition layer on the substrate surface using an alloy target composed of a mixture of five elements: AlTiVCrZr (Zr atomic percentage is 35%, Al, Ti, V atomic percentage is 20%, Cr atomic percentage is 5%), and introduce argon gas with a flow rate of 60sccm. The working gas pressure is maintained at 0.9Pa, the substrate bias is -200V, the target average current is 0.2A, and the deposition time is 8min.

[0073] Step 3: Use HCPEB method to strengthen the surface of AlTiVCrZr transition layer; select vacuum degree P≤8×10 - 3 Pa, electron beam energy is 40KeV, energy density is 4J / cm², working distance is 30cm, and bombardment times is 50 times.

[0074] Step 4: Use magnetron sputtering method, use an alloy target with an equimolar mixture of five elements AlTiVCrZr, and introduce methane and argon. The argon flow rate is 90sccm, the methane flow rate is 10sccm, and the methane flow rate accounts for 10%. The working gas pressure is maintained at 0.9Pa, the substrate bias is -200V, the target average current is 0.5A, and the (AlTiVCrZr)C layer is further deposited on the surface for 60min.

[0075] Step 5: Using the filtered cathode vacuum arc method, a 99.999% pure graphite target is used with a target current of 50 A, and argon is introduced with a flow rate of 8 sccm. The working pressure is maintained at 0.9 Pa, the substrate bias voltage is 50 V, the substrate bias current is 0.5 A, and ta-C is further deposited on the (AlTiVCrZr)C layer for 30 minutes.

[0076] Step 6: Repeat steps 4 and 5 six times to obtain a HECs / ta-C multilayer alternating coating.

[0077] The thickness of the AlTiVCrZr transition layer in the obtained HECs / ta-C composite multilayer toughened and wear-resistant coating is 340nm, the thickness of each (AlTiVCrZr)C layer is controlled at 1200nm, the thickness of each ta-C layer is 180nm, and the total thickness is 10μm.

[0078] The parts not involved in the present invention are the same as the existing technology or can be implemented by using the existing technology.

Claims

1. A method for preparing a high-current pulsed electron beam enhanced HEA transition layer and its HECs / ta-C composite multilayer structure, characterized in that: The following steps are involved: Step 1: pre-treating the substrate surface, cleaning with Ar ions, and pre-sputtering the target material; Step 2: Using magnetron sputtering, an alloy target containing five elements of AlTiVCrZr is used, and argon gas is introduced to prepare an AlTiVCrZr transition layer on the substrate surface; Step 3: Using HCPEB method to strengthen the AlTiVCrZr transition layer; Step 4: Using magnetron sputtering, a mixed alloy target of five elements AlTiVCrZr is used, and methane and argon are introduced to further deposit an (AlTiVCrZr)C layer; Step 5: using filtered cathode vacuum arc method with graphite target and argon gas, ta-C is further deposited on the (AlTiVCrZr)C layer; Step 6: Repeat the operations of steps 4 and 5 to obtain a (AlTiVCrZr)C / ta-C multi-layer alternating coating.

2. The preparation method according to claim 1, characterized in that In step 1, the substrate surface is pretreated by polishing it with 600# to 1500# sandpaper in sequence, and then mechanically polishing it to a mirror state with W0.5~2.5 diamond grinding paste, and the surface roughness of the polished substrate Ra is less than or equal to 40nm; the polished substrate is ultrasonically cleaned with acetone and anhydrous ethanol for 10~20 minutes respectively, and then blown dry with dry argon gas; then the substrate is placed in a vacuum furnace for Ar ion cleaning, the anode source is turned on, the average current is 0.1~0.2A, the substrate bias voltage is -200~-300V, the Ar gas flow rate is 25~60sccm, the working gas pressure is maintained at 0.6Pa~0.9Pa, and the cleaning time is 5~10min; finally, the target material is pre-sputtered with an average current of 0.1A and a duration of 2min.

3. The preparation method according to claim 1, characterized in that In the step 2 for preparing the AlTiVCrZr transition layer, the Ar gas flow rate is 25-60 sccm, the working gas pressure is maintained at 0.6Pa-0.9Pa, the substrate bias is 0-200V, the target average current is 0.15-0.3A, and the deposition time is 5-10min.

4. The preparation method according to claim 1, characterized in that In step 3, for strengthening the AlTiVCrZr transition layer, the vacuum degree P is selected to be ≤ 8×10 -3 Pa, electron beam energy is 15-40 KeV, energy density is 4-10 J / cm², working distance is 10-30 cm, and bombardment times is 10-50 times.

5. The preparation method according to claim 1, characterized in that In step 4, for the preparation of the (AlTiVCrZr)C layer, the argon flow rate is 85-95 sccm, the methane flow rate is 5-15 sccm, of which the methane flow rate accounts for 5%-15%, the working gas pressure is maintained at 0.6 Pa-0.9 Pa, the substrate bias is 0-200 V, the target average current is 0.3-0.5 A, and the deposition time is 1-60 min.

6. The preparation method according to claim 1, characterized in that In step 5, for the preparation of the ta-C layer, the target material is a graphite target with a purity of 99.999%, the target current is 45~60A, the argon flow rate is 5~10sccm, the working gas pressure is maintained at 0.6Pa~0.9Pa, the substrate bias is 50~200V, the substrate bias current is 0.3~0.5A, and the deposition time is 1~60min.

7. The preparation method according to claim 1, characterized in that The HEA layer is composed of Al, Ti, V, Cr, and Zr elements, and the HECs layer is composed of Al, Ti, V, Cr, Zr, and C elements.

8. The preparation method according to claim 1, wherein: The atomic percentage of each element in the alloy target in the prepared HEA and HECs coatings ranges from 5% to 35%.

9. The preparation method according to claim 1, wherein The prepared HECs / ta-C composite multilayer toughened and wear-resistant coating includes a HEA reinforced transition layer and a HECs / ta-C multilayer alternating coating.

10. The preparation method according to claim 9, characterized in that The thickness of the HEA-reinforced transition layer AlTiVCrZr in the HECs / ta-C composite multilayer toughened and wear-resistant coating is 250nm~500nm, the total thickness of the (AlTiVCrZr)C / ta-C multilayer alternating coating is 1~10μm, and each layer is controlled at 5nm-1200nm; the outermost layer of the HECs / ta-C composite multilayer toughened and wear-resistant coating is the ta-C layer.

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