Chemical mechanical polishing slurry composition for polishing copper and copper film polishing method

Abstract

Disclosed herein is a chemical mechanical polishing slurry composition for polishing copper and a method for polishing a copper film using the chemical mechanical polishing slurry composition. The chemical mechanical polishing slurry composition includes: at least one solvent selected from a polar solvent and a nonpolar solvent; an abrasive; and at least one compound selected from a compound including Formula 1 and a compound including Formula 2.

Description

[0001] [Cross - reference to related applications]

[0002] This application claims the benefit of Korean Patent Application No. 10 - 2022 - 0013204, filed on January 28, 2022, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a chemical mechanical polishing (CMP) slurry composition for polishing copper and a method for polishing a copper film using the CMP slurry composition. More specifically, the present invention relates to a CMP slurry composition for polishing copper, which can improve the flatness of a polished surface by reducing dishing and erosion while minimizing the polishing rate of the copper film. Background Art

[0004] The process of polishing a copper film, which is a metal interconnect of a semiconductor device, requires achieving a sufficiently high polishing rate, good polishing selectivity of the copper film with respect to a barrier metal or a dielectric, an appropriate flatness level of the polished surface, and a low defect level. Specifically, as the thickness of the interconnect and the semiconductor layer decreases due to pattern miniaturization, a CMP slurry capable of ensuring a high flatness of the polished surface is required.

[0005] Recently, in the field of CMP of copper films, dishing inhibitors have been actively developed. As a solution to minimize dishing, acrylic acid - acrylamide copolymer is used in the art. However, the acrylic acid - acrylamide copolymer may cause a decrease in the polishing rate of the copper film and may cause organic defects after polishing. Summary of the Invention

[0006] One aspect of the present invention is to provide a CMP slurry composition for polishing copper, which can achieve a high flatness of the polished surface by reducing surface defects such as dishing and erosion.

[0007] Another aspect of the present invention is to provide a CMP slurry composition for polishing copper, which does not exhibit a decrease in the polishing rate with respect to the copper film.

[0008] According to one aspect of the present invention, a CMP slurry composition for polishing copper comprises: at least one solvent selected from a polar solvent and a nonpolar solvent; an abrasive agent; and at least one compound selected from a compound represented by Formula 1 and a compound represented by Formula 2:

[0009] [Formula 1]

[0010]

[0011] wherein * is a linking site of an element,

[0012] R 1 、R 2 、R 3 and R 4 are each independently a single bond or a C1-C5 alkylene group,

[0013] M 1 、M 2 、M 3 and M 4 are OH or O - N + (N + is a monovalent cation),

[0014] a, b, c and d are each greater than or equal to 0, and a + b + c + d is not equal to 0.

[0015] [Formula 2]

[0016]

[0017] wherein * is a linking site of an element,

[0018] R 5 、R 6 、R 7 and R 8 are each independently a C1-C5 alkylene group,

[0019] M 5 and M 6 are OH or O - N + (N + is a monovalent cation),

[0020] a and b are each greater than or equal to 0, and a + b is not equal to 0.

[0021] According to another aspect of the present invention, a copper film polishing method includes polishing a copper film using the CMP slurry composition for polishing copper according to the present invention.

[0022] The present invention provides a CMP slurry composition for polishing copper, which can achieve a high flatness of the polished surface by reducing surface defects such as dents and erosion.

[0023] In addition, the present invention provides a CMP slurry composition for polishing copper, which does not show a decrease in the polishing rate for a copper film. Detailed Description

[0024] A CMP slurry composition for polishing copper according to the present invention comprises: at least one solvent selected from polar solvents and non-polar solvents; an abrasive; and at least one compound selected from a compound represented by Formula 1 and a compound represented by Formula 2. Therefore, the CMP slurry composition for polishing copper according to the present invention can achieve a high polishing rate for a copper film while improving the flatness of the polished surface by reducing surface defects such as dents and erosion.

[0025] In one embodiment, the at least one compound can be used as a dent inhibitor or an erosion inhibitor in the CMP slurry composition for polishing copper according to the present invention. In one embodiment, based on the total weight of all dent inhibitors or erosion inhibitors contained in the CMP slurry composition for polishing copper according to the present invention, the content of the at least one compound selected from the compound represented by Formula 1 and the compound represented by Formula 2 can be 50% by weight or more than 50% by weight, such as 60% by weight or more than 60% by weight, 70% by weight or more than 70% by weight, 80% by weight or more than 80% by weight, or 90% by weight or more than 90% by weight, or 100% by weight.

[0026] Each of the components of the CMP slurry composition for polishing copper according to the present invention (hereinafter also referred to as "CMP slurry composition") will now be described in more detail.

[0027] The CMP slurry composition comprises at least one selected from a compound represented by Formula 1 and a compound represented by Formula 2.

[0028] [Formula 1]

[0029]

[0030] where * is the bonding site of the element,

[0031] R 1 、R 2 、R 3 and R4 Each independently is a single bond or a C1-C5 alkylene group,

[0032] M 1 、M 2 、M 3 and M 4 are OH or O - N + (N + is a monovalent cation),

[0033] a, b, c and d are each greater than or equal to 0, and

[0034] a + b + c + d is not equal to 0.

[0035] [Formula 2]

[0036]

[0037] where * is the bonding site of the element,

[0038] R 5 、R 6 、R 7 and R 8 each independently is a C1-C5 alkylene group,

[0039] M 5 and M 6 are OH or O - N + (N + is a monovalent cation),

[0040] a and b are each greater than or equal to 0, and

[0041] a + b is not equal to 0.

[0042] Each of the compound containing the formula 1 and the compound containing the formula 2 has -C(=O)M 1 、-C(=O)M 2 、-C(=O)M 3 、-C(=O)M 4 or -C(=O)M 5 (M 1 、M 2 、M 3 、M 4 and M 5 each independently is OH or O as an electronegative group - N + (N + is a monovalent cation)), and at the same time has a planar rigid amide group (-C(=O)-NH -) or a group similar to the amide group. Thus, each of the compound of Formula 1 and the compound of Formula 2 can shield the copper film over a wide surface area of the copper film, and thus can have a high adsorption capacity for the copper film, thereby ensuring a significant reduction in the depression and erosion of the copper film. Specifically, in the CMP slurry composition according to the present invention, -C(=O)M that forms the side chain of each of the compound of Formula 1 and the compound of Formula 2 1 , -C(=O)M 2 , -C(=O)M 3 , -C(=O)M 4 or -C(=O)M 5 is ionized to -C(=O)-O - , and thus has a high adsorption capacity for the copper film.

[0043] Specifically, the compound of Formula 1 has both -C(=O)M as a side chain and an amide group (-C(=O)-NH - ) as a main chain in one repeating unit. Therefore, compared with typical acrylic and acrylamide copolymers (the typical acrylic and acrylamide copolymers have both repeating units with carboxylic acid on their side chains and repeating units with amide groups on their side chains), the compound of Formula 1 has a relatively small weight average molecular weight, while exhibiting equivalent depression inhibition characteristics or erosion inhibition characteristics. Therefore, the polishing rate for the copper film can be prevented from decreasing or minimized by reducing the viscosity of the compound of Formula 1.

[0044] In Formulas 1 and 2, the monovalent cation can be an alkali metal monovalent cation (for example, Li + , Na + , K + ).

[0045] In Formulas 1 and 2, the C1 to C5 alkylene group is preferably a C2 to C3 alkylene group, such as ethylene, propylene, butylene or pentylene.

[0046] The compound of Formula 1 and the compound of Formula 2 can be homo-oligomers or hetero-oligomers. As used herein, "oligomer" can refer to a compound having a weight average molecular weight of from 1,000 g / mol to 5,000 g / mol, specifically 1,000 g / mol, 1,100 g / mol, 1,200 g / mol, 1,300 g / mol, 1,400 g / mol, 1,500 g / mol, 1,600 g / mol, 1,700 g / mol, 1,800 g / mol, 1,900 g / mol, 2,000 g / mol, 2,100 g / mol, 2,200 g / mol, 2,300 g / mol, 2,400 g / mol, 2,500 g / mol, 2,600 g / mol, 2,700 g / mol, 2,800 g / mol, 2,900 g / mol, 3,000 g / mol, 3,100 g / mol, 3,200 g / mol, 3,300 g / mol, 3,400 g / mol, 3,500 g / mol, 3,600 g / mol, 3,700 g / mol, 3,800 g / mol, 3,900 g / mol, 4,000 g / mol, 4,100 g / mol, 4,200 g / mol, 4,300 g / mol, 4,400 g / mol, 4,500 g / mol, 4,600 g / mol, 4,700 g / mol, 4,800 g / mol, 4,900 g / mol or 5,000 g / mol. Herein, the weight average molecular weight can be measured by typical methods known to those skilled in the art. For example, the weight average molecular weight can be determined by gel permeation chromatography (GPC) using a polystyrene standard sample.

[0047] In one embodiment, the compound of Formula 1 can include at least one selected from the compounds of Formula 3, the compounds of Formula 4, and the compounds of Formula 5.

[0048] [Formula 3]

[0049]

[0050] where * is the attachment site of the element,

[0051] M 1 and M 2 are the same as defined in Formula 1,

[0052] a and b are each greater than or equal to 0, and a + b is not equal to 0.

[0053] [Formula 4]

[0054]

[0055] where * is the linking site of the element,

[0056] M 3 and M 4 are the same as those defined in Formula 1,

[0057] c and d are each greater than or equal to 0, and c + d is not equal to 0.

[0058] [Formula 5]

[0059]

[0060] where * is the linking site of the element,

[0061] M 1 、M 2 、M 3 and M 4 are the same as those defined in Formula 1,

[0062] a, b, c and d are each greater than or equal to 0, and a + b + c + d is not equal to 0.

[0063] In Formula 1 and Formula 5, the range of a can be between 0 and 30, the range of b can be between 0 and 30, the range of c can be between 0 and 30, and the range of d can be between 0 and 30. Each of a, b, c and d can be 0, greater than 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30. In Formula 1 and Formula 5, the arrangement order of the repeating units can be changed.

[0064] In Formula 2, Formula 3 and Formula 4, the range of a can be between 0 and 30, and the range of b can be between 0 and 30. Each of a and b can be 0, greater than 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30.

[0065] In the CMP slurry composition, the content of the at least one compound selected from the group consisting of the compound of Formula 1 and the compound of Formula 2 may be from 0.0001% by weight to 2% by weight, specifically 0.001% by weight, 0.005% by weight, 0.01% by weight, 0.02% by weight, 0.03% by weight, 0.04% by weight, 0.05% by weight, 0.06% by weight, 0.07% by weight, 0.08% by weight, 0.09% by weight, 0.1% by weight, 0.5% by weight, 1% by weight, 1.5% by weight or 2% by weight, preferably from 0.0002% by weight to 1% by weight, more preferably from 0.0005% by weight to 0.5% by weight and still more preferably from 0.001% by weight to 0.1% by weight. Within this range, the CMP slurry composition can polish the copper film at a sufficiently high polishing rate and can improve the flatness of the polished surface by preventing dents and erosion.

[0066] The at least one compound can be prepared by polymerization of a mixture of monomers or can be a commercially available product, and the monomers include at least one of a compound providing the repeating unit in Formula 1 and a compound providing the repeating unit in Formula 2. For example, the monomers can include anionic amino acids such as aspartic acid and glutamic acid, but are not limited thereto. Here, the polymerization of the monomer mixture can be carried out by typical methods known to those skilled in the art. The weight average molecular weight of the at least one compound can be controlled by adjusting the amount of monomers, the polymerization time and / or the polymerization temperature, and the amount of the polymerization catalyst.

[0067] When polishing a copper film with an abrasive, at least one solvent selected from polar solvents and non-polar solvents is used to reduce the friction between the abrasive and the copper film. At least one solvent selected from polar solvents and non-polar solvents can include water (e.g., ultrapure water), organic amines, organic alcohols, organic alkanolamines, organic ethers, and organic ketones. Preferably, at least one solvent selected from polar solvents and non-polar solvents is ultrapure water, i.e., deionized water. In the CMP slurry composition, at least one solvent selected from polar solvents and non-polar solvents can be present in the balance, for example, in an amount of 20% by weight to 90% by weight.

[0068] The abrasive can include any typical abrasive for copper polishing. The abrasive can be, for example, metal oxide abrasive particles or non-metal oxide abrasive particles. For example, the abrasive can include at least one selected from silica, alumina, ceria, titanium dioxide, and zirconia. In one embodiment, the abrasive can be silica (e.g., colloidal silica), but is not limited thereto.

[0069] The abrasive may be spherical particles or non-spherical particles and may have an average primary particle diameter (D 50 ) in the range of 10 nm to 150 nm, for example, 20 nm to 70 nm. Within this range, the abrasive can polish a copper film as a polishing target herein at a sufficiently high polishing rate without causing scratches. The "average particle diameter (D 50 )" used herein is a typical particle diameter measure known in the art and refers to the particle diameter corresponding to 50% by volume in the volume accumulation distribution of abrasive particles.

[0070] In the CMP slurry composition, the content of the abrasive may be 0.001% to 20% by weight, preferably 0.005% to 10% by weight, more preferably 0.01% to 5% by weight, and even more preferably 0.05% to 3% by weight. Within this range, the abrasive can polish the copper film at a sufficiently high polishing rate without causing scratches and can contribute to improving the dispersion stability of the CMP slurry composition.

[0071] The CMP slurry composition may further include a corrosion inhibitor, a chelating agent, and an oxidizing agent.

[0072] The corrosion inhibitor can protect the copper film in the trenches of the polishing target including the oxide film and the copper film and can promote the polishing of the patterned portion of the polishing target. The corrosion inhibitor may include azole compounds. Specifically, the azole compounds may include at least one selected from triazole compounds and tetrazole compounds.

[0073] The triazole compounds may include benzotriazole compounds, which include methylbenzotriazoles (such as 5-methylbenzotriazole and 4-methylbenzotriazole), ethylbenzotriazole, propylbenzotriazole, butylbenzotriazole, pentylbenzotriazole, and hexylbenzotriazole, 1,2,4-triazole, 1,2,3-triazole, and similar compounds. The triazole compounds may exist in the CMP slurry composition in their original form or in the form of their salts. The tetrazole compounds may include at least one selected from tetrazole, 5-aminotetrazole, 5-methyltetrazole, and 5-phenyltetrazole, but are not limited thereto. The tetrazole compounds may exist in the CMP slurry composition in their original form or in the form of their salts.

[0074] In the CMP slurry composition, the content of the corrosion inhibitor may be from 0.001% by weight to 5% by weight, preferably from 0.005% by weight to 0.5% by weight. Within this range, the corrosion inhibitor can reduce dents or erosion during polishing of the patterned portion of the polishing target, thereby improving the flatness of the polished surface.

[0075] The chelating agent chelates cupric oxide and copper ions generated during polishing of the copper film. Therefore, the chelating agent can suppress the re-adsorption of cupric oxide onto the copper film as the polishing target, can increase the polishing rate for the copper film, and can reduce surface defects.

[0076] The chelating agent may include at least one selected from organic acids, organic acid salts, amino acids, amino acid salts, alcohols (such as diols, triols, and polyols), amine-containing compounds, phosphoric acid esters, and phosphates. Preferably, the chelating agent is an amino acid. Herein, "organic acid" may refer to an acid that does not have an amino group (-NH2) different from an amino acid. When an amino acid is used as the chelating agent, the CMP slurry composition can polish the copper film at a higher polishing rate than when an organic acid or its salt or phosphate is used as the chelating agent.

[0077] The organic acid may include organic carboxylic acids having one or more carboxyl groups. For example, the organic acid may include saturated acids (such as glycolic acid, lactic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, formic acid, salicylic acid, dimethylbutyric acid, octanoic acid, benzoic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, and pimelic acid), maleic acid, fumaric acid, itaconic acid, phthalic acid, and citric acid. For example, the salts of the organic acid may include ammonium citrate, ammonium acetate, and similar salts.

[0078] The amino acid may include at least one selected from glycine, alanine, serine, asparagine, glutamic acid, proline, hydroxyproline, arginine, cystine, histidine, tyrosine, leucine, lysine, methionine, valine, isoleucine, threonine, tryptophan, and phenylalanine. Preferably, glycine is used as the amino acid. When glycine is used as the amino acid, the polishing rate for the copper film can be further increased.

[0079] The phosphate may include ammonium phosphate, ammonium phosphate trihydrate, and similar salts.

[0080] In the CMP slurry composition, the content of the chelating agent may be from 0.01% by weight to 20% by weight, preferably from 0.1% by weight to 10% by weight. Within this range, the chelating agent can increase the polishing rate for the copper film, the dispersion stability of the composition, and the surface characteristics of the copper film after polishing.

[0081] The oxidizing agent promotes the polishing of the copper film by oxidizing the copper film. In addition, the oxidizing agent improves the surface roughness of the copper film after polishing by smoothing the surface of the copper film.

[0082] The oxidizing agent may include at least one selected from inorganic per-compounds, organic per-compounds, bromic acid or its salts, nitric acid or its salts, chloric acid or its salts, chromic acid or its salts, iodic acid or its salts, iron or its salts, copper or its salts, rare earth metal oxides, transition metal oxides, and potassium dichromate. Herein, "per-compound" refers to a compound containing at least one peroxide group (-O-O-) or a compound containing an element in the highest oxidation state. Preferably, the oxidizing agent is a per-compound. For example, the per-compound may include at least one selected from hydrogen peroxide, potassium periodate, calcium persulfate, and potassium ferricyanide. Preferably, the per-compound is hydrogen peroxide.

[0083] In the CMP slurry composition, the content of the oxidizing agent may be 0.1 wt% to 5 wt%, preferably 0.5 wt% to 2 wt%. Within this range, the CMP slurry composition can exhibit good polishing performance.

[0084] The CMP slurry composition may further contain a pH regulator. The pH regulator may include organic bases such as sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, and potassium carbonate. As an alternative, the pH regulator may include inorganic acids such as at least one selected from nitric acid, phosphoric acid, hydrochloric acid, and sulfuric acid. In the CMP slurry composition, the content of the pH regulator may be 1 wt% or less than 1 wt%.

[0085] The CMP slurry composition may further include typical additives such as surfactants, dispersants, modifiers, and similar additives.

[0086] The CMP slurry composition may have a pH of 5 to 9, preferably 6 to 8.

[0087] A method for polishing a copper film according to the present invention includes polishing a copper film using the CMP slurry composition according to the present invention.

[0088] Next, the present invention will be described in more detail with reference to some examples. It should be understood that these examples are provided for illustration only and should not be construed as limiting the present invention in any way.

[0089] Example 1

[0090] A CMP slurry composition was prepared by, based on the total weight of the CMP slurry composition, adding 0.01 wt% of polyaspartic acid (a compound represented by Formula 3 (M 1and M 2 each being OH), weight-average molecular weight: about 4,000 g / mol) and 1 wt% of colloidal silica having an average particle diameter (D 50 ) of 50 nm (DVSZN-004, Nalco Chemicals), 0.1 wt% of 1,2,3-triazole as a corrosion inhibitor (liquid, JL Chem Co., Ltd.), 1.5 wt% of glycine as a chelating agent (solid, JL Chem Co., Ltd.) and the balance of ultrapure water were mixed. Then, the pH of the prepared CMP slurry composition was adjusted to 7 using a pH adjuster (nitric acid or potassium hydroxide). Then, hydrogen peroxide as an oxidizing agent (liquid, Dongwoo Fine-Chem Co., Ltd.) was added in an amount of 1.0 wt% based on the total weight of the CMP slurry composition.

[0091] Example 2

[0092] A CMP slurry composition was prepared in the same manner as in Example 1 except that the amount of polyaspartic acid was changed to 0.005 wt%.

[0093] Example 3

[0094] A CMP slurry composition was prepared in the same manner as in Example 1 except that 0.01 wt% of polyglutamic acid (compound represented by Formula 4 (M 3 and M 4 each being OH), weight-average molecular weight: about 4,000 g / mol) was used instead of polyaspartic acid.

[0095] Example 4

[0096] A CMP slurry composition was prepared in the same manner as in Example 3 except that the amount of polyglutamic acid was changed to 0.005 wt%.

[0097] Example 5

[0098] A CMP slurry composition was prepared in the same manner as in Example 1 except that the compound represented by Formula 5 (M 1 , M 2 , M 3 and M 4 each being OH, 10 < a < 20, 10 < b < 20, 10 < c < 20 and 10 < d < 20, weight-average molecular weight: about 4,000 g / mol) was used instead of polyaspartic acid.

[0099] Comparative Example 1

[0100] A CMP slurry composition was prepared in the same manner as in Example 1 except that no polyaspartic acid was used.

[0101] Comparative Example 2

[0102] A CMP slurry composition was prepared in the same manner as in Example 1 except that 0.005 wt% of an acrylic acid-acrylamide copolymer (weight average molecular weight: about 800,000 g / mol) was used instead of polyaspartic acid.

[0103] Each of the CMP slurry compositions prepared in the examples and comparative examples was evaluated for the properties shown in Table 1. The results are shown in Table 1.

[0104] (1) Copper polishing rate (unit: ) :

[0105] A blanket wafer (diameter: 300 mm) made by laminating a copper film on a silicon oxide film was polished under the following conditions, and then the change in sheet resistance before and after polishing was converted into the etched thickness to calculate the polishing rate.

[0106] Polishing instrument: Reflexion LK 300 mm (AMAT Co., Ltd.)

[0107] Polishing pad: VP6000 (NexPlanar Corporation)

[0108] Polishing time: The polishing time varied according to the polishing amount of the blanket wafer.

[0109] Slurry flow rate: 250 mL / min

[0110] Pressure: 2.2 pounds per square inch (psi)

[0111] Measurement of polishing rate: Sheet resistance meter

[0112] (2) Dish (unit: nm): A patterned copper wafer (MIT 754 patterned wafer (Ta BM), Advantech Corporation, diameter: 300 mm) was polished in the same manner as in (1), and then the profile of the wafer pattern was measured using an AFM (XE-300, Park Systems). The dish was measured in a trench with a size of 100 μm × 100 μm.

[0113] (3) Erosion (unit: nm): The patterned copper wafer was polished in the same manner as in (1), and then the profile of the wafer pattern was measured using an InSight CAP Compact Atomic Profiler (Bruker Co., Ltd.). Erosion was calculated based on the height difference between the peri oxide film and the cell oxide film in the 9 / 1 μm patterned area of the polished wafer. Here, the scan rate was set to 100 μm / second, and the scan length was set to 2 mm.

[0114]

[0115]

[0116] As shown in Table 1, the CMP slurry composition according to the present invention can improve the flatness of the polished surface by reducing surface defects such as dents and erosion while not showing a decrease in the polishing rate for the copper film.

[0117] In contrast, the CMP slurry composition of Comparative Example 1 that does not contain at least one of the compounds selected from the compound of Formula 1 and the compound of Formula 2 resulted in significant dent and erosion defects. In addition, the CMP slurry composition of Comparative Example 2 in which 0.005 wt% of an acrylic acid-acrylamide copolymer was used instead of at least one of the compounds selected from the compound of Formula 1 and the compound of Formula 2 showed a significant decrease in the polishing rate and resulted in significant dent and erosion defects. In addition, although not shown in Table 1, the copolymer is not easily removed during post-polishing cleaning due to its high weight-average molecular weight, resulting in organic defects.

[0118] It should be understood that those skilled in the art can make various modifications, changes, alterations, and equivalent embodiments without departing from the spirit and scope of the present invention.

Claims

1. A chemical mechanical polishing slurry composition for polishing copper, comprising: At least one solvent selected from polar solvents and non - polar solvents; An abrasive; And At least one compound selected from the group consisting of compounds of formula 1 and compounds of formula 2: [Formula 1] Where * is the bonding site of the element, R 1 、R 2 、R 3 and R 4 each independently is a single bond or a C1 to C5 alkylene group, M 1 and M 2 and M 3 and M 4 is OH or O - N + where N + is a monovalent cation, a, b, c and d are each greater than or equal to 0, and a + b + c + d is not equal to 0, [Formula 2] Where * is the bonding site of the element, R 5 、R 6 、R 7 、R 8 Each independently is a C1 to C5 alkylene group, M 5 and M 6 is OH or O - N + , where N + is a monovalent cation, a and b are each greater than or equal to 0, and a + b is not equal to 0, Where the chemical mechanical polishing slurry composition has a pH of 6 to 8, The chemical mechanical polishing slurry composition comprises 0.001 wt% to 20 wt% of the abrasive and 0.0001 wt% to 2 wt% of the at least one compound, and The chemical mechanical polishing slurry composition further comprises 0.001 wt% to 5 wt% of a corrosion inhibitor and 0.01 wt% to 20 wt% of a chelating agent, wherein the corrosion inhibitor comprises azole compounds, and the azole compounds comprise at least one selected from triazole compounds and tetrazole compounds, Where the at least one compound has a weight - average molecular weight of 1,000 g / mol to 5,000 g / mol.

2. The chemical mechanical polishing slurry composition according to claim 1, wherein the compound of formula 1 comprises at least one selected from the group consisting of compounds of formula 3, compounds of formula 4 and compounds of formula 5: [Formula 3] Where * is the bonding site of the element, M 1 and M 2 is the same as defined in Formula 1, a and b are each greater than or equal to 0, and a + b is not equal to 0, [Formula 4] Where * is the bonding site of the element, M 3 and M 4 is the same as that defined in Formula 1, c and d are each greater than or equal to 0, and c + d is not equal to 0, [Formula 5] Where * is the bonding site of the element, M 1 、M 2 、M 3 and M 4 are the same as defined in Formula 1, a, b, c and d are each greater than or equal to 0, and a + b + c + d is not equal to 0.

3. The chemical mechanical polishing slurry composition according to claim 1, wherein, In formula 1, the range of a is from 0 to 30, the range of b is from 0 to 30, the range of c is from 0 to 30, and the range of d is from 0 to 30.

4. The chemical mechanical polishing slurry composition according to claim 1, further comprising: An oxidizing agent.

5. The chemical mechanical polishing slurry composition according to claim 4, comprising: 0.1 wt% to 5 wt% of the oxidizing agent; And the balance of the at least one solvent.

6. A copper film polishing method, comprising: Polishing a copper film using the chemical mechanical polishing slurry composition according to any one of claims 1 to 5.

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