Wafer metal plating system and method

Abstract

The application discloses a wafer metal coating system, which comprises a wafer pre-extraction device, wherein the wafer pre-extraction device comprises a pre-extraction cavity, a left wafer lifting base, a right wafer lifting base, a left water cooling disc and a right water cooling disc; the pre-extraction cavity is divided into two cavities by a transverse partition plate; the left water cooling disc is fixedly installed on the left part of the bottom plate of the pre-extraction cavity, and the right water cooling disc is fixedly installed on the right part of the bottom plate of the pre-extraction cavity; a water cooling pipe is arranged in the water cooling disc; the water inlet and the water outlet of the water cooling pipe are communicated to the outside of the pre-extraction cavity; the left wafer lifting base is arranged in the center of the left water cooling disc and can move up and down; the right wafer lifting base is arranged in the center of the right water cooling disc and can move up and down; and the sidewall of the lower cavity of the pre-extraction cavity is provided with a lower feeding port. The application further discloses a wafer metal coating method. The wafer metal coating system can rapidly and naturally cool a pair of wafers after completing a metal coating process, reduces the waiting time of high-temperature metal coating wafers in the wafer pre-extraction device, and improves the wafer conveying efficiency of the wafer metal coating system.

Description

TECHNICAL FIELD

[0001] The present application relates to semiconductor manufacturing technology, in particular to a wafer metal plating system and method. BACKGROUND

[0002] In the process of wafer metal plating, the process cavities of the metal plating process device are usually two by two adjacent to form a pair of chambers. When the temperature of the cavity wall is greater than 150℃, the pair of chambers will affect each other's temperature field due to being connected or too close to each other, thereby affecting the independent control of the chamber temperature. In addition, because the reaction temperature inside the process cavity is greater than 400℃, the temperature of the wafer after leaving the chamber is very high. If it is directly exposed to an oxygen-containing environment, it will cause the metal film to oxidize. The existing process usually allows the wafer to naturally cool in the load before being transferred to the wafer box.

[0003] Chinese patent document CN210765501U discloses a wafer plating process device, an upper cavity upper portion is provided with an upper cover for connecting and maintaining the internal structure of the upper cavity; an inner cavity is arranged inside the upper cavity for wafer surface plating, one end of the inner cavity is provided with a spray plate, process atmosphere can enter the inner cavity through the spray plate, and a heater is distributed around the inner cavity, which can provide a uniform temperature field according to the needs of the plating process, ensuring the quality of the film and the normal operation of the process; the wafer carrier enters the inner cavity after wafer loading in the lower cavity, and after the plating reaction is completed, the wafer carrier moves downward into the lower cavity; a feed inlet is arranged on one side of the lower cavity, the feed inlet is connected with an external transfer cavity through a rectangular valve, and the loading and unloading of the wafer is completed.

[0004] Chinese patent document CN114823445A discloses a wafer pre-evacuation device, at least one side of the box is provided with a door opening for transmitting wafers into or out of the box; at least one side of the box is provided with an interface for gas extraction or gas charging for connecting a molecular pump to extract or discharge gas in the box. The wafer pre-evacuation device is not conducive to wafer cooling because the wafer conveying device for stacking multiple wafers is arranged in the internal cavity of the box, and the wafer conveying device base is embedded in the recessed mounting part of the box bottom plate. SUMMARY

[0005] The technical problem to be solved by the present application is to enable a pair of wafers to be rapidly and naturally cooled after completing the metal plating process, reduce the waiting time of high-temperature metal-plated wafers in the wafer pre-evacuation device, and improve the wafer conveying efficiency of the wafer metal plating system.

[0006] To solve the above technical problems, the wafer metal plating system provided by the present application comprises a wafer pre-evacuation device 1;

[0007] The wafer pre-extraction device 1 includes a pre-extraction cavity 11, a left wafer lifting base 12, a right wafer lifting base 13, a left water-cooling plate 14, and a right water-cooling plate 15;

[0008] The pre-extraction cavity 11 is divided into upper and lower cavities by a transverse partition 18;

[0009] Both the left water cooling plate 14 and the right water cooling plate 15 are located in the lower cavity. The left water cooling plate 14 is fixedly installed on the left side of the bottom plate of the pre-extraction cavity 11, and the right water cooling plate 15 is fixedly installed on the right side of the bottom plate of the pre-extraction cavity 11.

[0010] Water cooling pipes 16 are installed inside the left water cooling plate 14 and the right water cooling plate 15;

[0011] The inlet and outlet of the water-cooled pipe 16 are connected to the outside of the pre-extraction chamber 11;

[0012] The left wafer lifting base 12 is located in the center of the left water cooling plate 14 and can move up and down;

[0013] The right wafer lifting base 13 is located in the center of the right water cooling plate 15 and can move up and down;

[0014] The lower cavity of the pre-extraction cavity 11 is provided with a lower feed port for inserting or removing the wafer 9 into or from the lower cavity of the pre-extraction cavity 11.

[0015] Preferably, a base driving structure 17 is fixed on the lower side of the pre-extraction cavity 11, and the base driving structure 17 is used to drive the left wafer lifting base 12 and the right wafer lifting base 13 to rise and fall.

[0016] Preferably, at least one of the inlet and outlet of the water-cooling pipe 16 is connected to the lower side of the bottom plate of the pre-extraction chamber 11.

[0017] Preferably, at least one of the inlet and outlet of the water-cooling pipe 16 is connected to the outer side wall of the pre-extraction chamber 11.

[0018] Preferably, the upper surfaces of the left water-cooling plate 14 and the right water-cooling plate 15 of the wafer pre-extraction device 1 are uniformly formed with a plurality of bumps 19.

[0019] Preferably, the protrusion 19 is made of ceramic material.

[0020] Preferably, the water cooling pipes 16 installed in the left water cooling plate 14 and the right water cooling plate 15 are spiral-shaped.

[0021] Preferably, a wafer support assembly 7 is provided in the upper cavity of the pre-drawing cavity 11 of the wafer pre-drawing device 1.

[0022] Each layer of the wafer support assembly 7 is provided with a pair of supports arranged on the left and right sides;

[0023] The distance from the center of the left support 71 to the center of the right support 72 is equal to the distance from the center of the left wafer lifting base 12 to the center of the right wafer lifting base 13;

[0024] The upper wall of the pre-extraction cavity 11 is provided with an upper feed port for inserting or removing the wafer 9 into or from the upper cavity of the pre-extraction cavity 11.

[0025] Preferably, the wafer metal coating system also includes a metal coating process device 2;

[0026] The metal coating process apparatus 2 has at least one pair of chambers 21;

[0027] The wafer to be coated is placed in the chamber 21 to perform the metal coating process, forming a metal film on the wafer surface;

[0028] The distance d between the two chambers 21 of each pair of chambers is 5mm to 15mm.

[0029] Preferably, thermal insulation material is provided between the two chambers 21 of each pair of chambers.

[0030] Preferably, the chamber 21 of the metal coating process apparatus 2 is divided into an upper chamber 211 and a lower chamber 212;

[0031] A spray plate 213 is provided inside the upper chamber 211;

[0032] The spray plate 213 is used to inject process gas into the upper chamber 211;

[0033] An exhaust ring groove 214 is formed around the periphery of the upper chamber 211;

[0034] The exhaust ring groove 214 is connected to an exhaust hole 215, which is used to exhaust the gas in the chamber 21 of the metal coating process device 2 to the outside of the chamber 21.

[0035] A wafer carrier 216 that can move up and down is provided in the lower chamber 212;

[0036] The side wall of the lower chamber 212 is provided with a coating feed port for inserting or removing the wafer 9 into the lower chamber 212.

[0037] Preferably, the wafer metal coating system further includes a wafer acquisition device 8;

[0038] The wafer acquisition device 8 includes a rear arm 81, a forearm 82, and a U-shaped hand 83;

[0039] The forearm 82 is connected to the head end of the hindarm 81 by a joint at the tail end.

[0040] The tail joint of the U-shaped hand 83 is connected to the head end of the forearm 82, and the two fingertips of the U-shaped hand 83 are respectively equipped with a capture head;

[0041] The distance between the two fingertips of the U-shaped hand 83, the distance from the center of the left wafer lifting base 12 to the center of the right wafer lifting base 13, and the distance between the centers of the two chambers 21 of each pair of chambers are the same.

[0042] Preferably, at least one of the posterior arm 81, forearm 82, and U-shaped hand 83 is provided with a reinforcing rib 84.

[0043] Preferably, the rear arm 81, forearm 82 and U-shaped hand 83 are made of titanium.

[0044] To solve the above-mentioned technical problems, the present invention provides a wafer metal deposition method using the aforementioned wafer metal deposition system, comprising the following steps:

[0045] S1. Transfer the wafer 9 to be coated onto the wafer carrier 216 in the metal coating process device 2;

[0046] S2. The metal coating process is completed on the wafer 9 on the wafer carrier 216 by the metal coating process device 2;

[0047] S3. The wafer 9 in a pair of chambers 21 of the metal coating process device 2 is picked up by the two pick-up heads of the U-shaped hand 83 of the wafer pick-up device 8 and sent into the left wafer lifting base 12 and right wafer lifting base 13 in the lower cavity of the wafer pre-extraction device 1 in a vacuum environment.

[0048] S4. After the wafer 9 in the lower cavity of the wafer pre-extraction device 1 is cooled to below the set temperature, it is transferred to the wafer cassette.

[0049] Preferably, in step S1, the wafer 9 to be coated is first transferred to the support of the wafer support assembly 7 in the upper cavity of the wafer pre-extraction device 1, and then the wafer taking device 8 transfers the wafer 9 to be coated on the support of the wafer support assembly 7 in the upper cavity of the wafer pre-extraction device 1 to the wafer carrier 216 in the metal coating process device 2.

[0050] Preferably, in step S2, the metal coating process temperature exceeds 400°C.

[0051] The wafer metal coating system of the present invention has a simple structure and low cost in its wafer pre-loading device 1. The lower cavity of the pre-loading chamber 11 of the wafer pre-loading device can simultaneously place a pair of wafers 9 that have completed the metal coating process from the paired chambers of the metal coating process device. The left water cooling plate 14 and the right water cooling plate 15 in the lower cavity of the pre-loading chamber 11 can enable the pair of wafers 9 that have completed the metal coating process to cool down quickly and naturally, reduce the waiting time of the high-temperature metal-coated wafers in the wafer pre-loading device (Loadlock), and improve the wafer transfer efficiency of the wafer metal coating system. Attached Figure Description

[0052] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0053] Figure 1 This is a schematic diagram of the wafer lifting base dropping structure of a wafer pre-pulling device according to an embodiment of the wafer metal coating system of the present invention.

[0054] Figure 2 This is a schematic diagram of the wafer lifting base raising structure of a wafer pre-drawing device according to an embodiment of the wafer metal coating system of the present invention.

[0055] Figure 3 This is a top view schematic diagram of the water-cooled tray of a wafer pre-drawing device according to an embodiment of the wafer metal coating system of the present invention;

[0056] Figure 4 This is a cross-sectional schematic diagram of a metal coating process apparatus according to an embodiment of the wafer metal coating system of the present invention;

[0057] Figure 5 This is a schematic diagram of the wafer acquisition device structure of an embodiment of the wafer metal coating system of the present invention;

[0058] Figure 6 A schematic diagram showing the reinforcing ribs provided in the wafer acquisition device according to an embodiment of the wafer metal coating system of the present invention;

[0059] Figure 7 This is a schematic diagram of the wafer metal coating method of the present invention.

[0060] Explanation of reference numerals in the attached figures

[0061] 1. Wafer pre-pulling device; 11. Pre-pulling cavity; 12. Left wafer lifting base; 13. Right wafer lifting base; 14. Left water cooling plate; 15. Right water cooling plate; 16. Water cooling pipe; 17. Base drive structure; 18. Lateral partition; 19. Bump; 9. Wafer; 7. Support assembly; 71. Left support body; 72. Right support body; 2. Metal coating process device; 21. Chamber; 211. Upper chamber; 212. Lower chamber; 213. Spray plate; 214. Exhaust ring groove; 215. Exhaust hole; 216. Wafer carrier; 8. Wafer picking device; 81. Rear arm; 82. Forearm; 83. U-shaped hand; 84. Reinforcing rib. Detailed Implementation

[0062] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0063] The terms "first," "second," and similar words used in this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Words such as "including" or "comprising" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," "right," "front," and "back" are used only to indicate relative positional relationships; these relative positional relationships may change accordingly when the absolute position of the described object changes.

[0064] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other.

[0065] Example 1

[0066] like Figure 1 , Figure 2 As shown, the wafer metal coating system includes a wafer pre-drawing device 1;

[0067] The wafer pre-extraction device 1 includes a pre-extraction cavity 11, a left wafer lifting base 12, a right wafer lifting base 13, a left water-cooling plate 14, and a right water-cooling plate 15;

[0068] The pre-extraction cavity 11 is divided into upper and lower cavities by a transverse partition 18;

[0069] Both the left water cooling plate 14 and the right water cooling plate 15 are located in the lower cavity. The left water cooling plate 14 is fixedly installed on the left side of the bottom plate of the pre-extraction cavity 11, and the right water cooling plate 15 is fixedly installed on the right side of the bottom plate of the pre-extraction cavity 11.

[0070] Water cooling pipes 16 are installed inside the left water cooling plate 14 and the right water cooling plate 15;

[0071] The inlet and outlet of the water-cooled pipe 16 are connected to the outside of the pre-extraction chamber 11;

[0072] The left wafer lifting base 12 is located in the center of the left water cooling plate 14 and can move up and down;

[0073] The right wafer lifting base 13 is located in the center of the right water cooling plate 15 and can move up and down;

[0074] The lower cavity of the pre-extraction cavity 11 is provided with a lower feed port for inserting or removing the wafer 9 into or from the lower cavity of the pre-extraction cavity 11.

[0075] Preferably, at least one of the inlet and outlet of the water-cooling pipe 16 is connected to the lower side of the bottom plate of the pre-extraction chamber 11.

[0076] Preferably, at least one of the inlet and outlet of the water-cooling pipe 16 is connected to the outer side wall of the pre-extraction chamber 11.

[0077] Better, such as Figure 2 As shown, a base driving structure 17 is fixed on the lower side of the pre-extraction cavity 11. The base driving structure 17 is used to drive the left wafer lifting base 12 and the right wafer lifting base 13 to rise and fall.

[0078] The wafer metal coating system of Embodiment 1 has a simple structure and low cost in its wafer pre-loading device 1. The lower cavity of the pre-loading chamber 11 of the wafer pre-loading device can simultaneously place a pair of wafers 9 that have completed the metal coating process from the paired chambers of the metal coating process device. The left water cooling plate 14 and the right water cooling plate 15 in the lower cavity of the pre-loading chamber 11 can enable the pair of wafers 9 that have completed the metal coating process to cool down quickly and naturally, reduce the waiting time of the high-temperature metal-coated wafers in the wafer pre-loading device (Loadlock), and improve the wafer transfer efficiency of the wafer metal coating system.

[0079] Example 2

[0080] Based on the wafer metal coating system of Example 1, such as Figure 3 As shown, the upper surfaces of the left water-cooling plate 14 and the right water-cooling plate 15 of the wafer pre-extraction device 1 are uniformly formed with a plurality of bumps 19.

[0081] Preferably, the protrusion 19 is made of ceramic material.

[0082] Preferably, the water cooling pipes 16 installed in the left water cooling plate 14 and the right water cooling plate 15 are spiral-shaped.

[0083] In the circular metal coating system of Embodiment 2, multiple bumps 19 are uniformly formed on the upper surfaces of the left water-cooling plate 14 and the right water-cooling plate 15 of the wafer pre-extraction device 1. This can prevent the wafer 9 from making large-area contact with the water-cooling plate. When the wafer 9 contacts the water-cooling plate, the contact area is very small, and no negative pressure area is formed, which reduces the effect of atmospheric pressure. When the wafer 9 is taken out from the wafer pre-extraction device 1, it can avoid damage to the wafer 9 caused by negative pressure when the wafer lifting base rises and lifts the wafer 9.

[0084] Example 3

[0085] Based on the wafer metal coating system of Embodiment 1, a wafer support assembly 7 is provided in the upper cavity of the pre-drawing cavity 11 of the wafer pre-drawing device 1.

[0086] Each layer of the wafer support assembly 7 is provided with a pair of supports arranged on the left and right sides;

[0087] The distance from the center of the left support 71 to the center of the right support 72 is equal to the distance from the center of the left wafer lifting base 12 to the center of the right wafer lifting base 13;

[0088] The upper wall of the pre-extraction cavity 11 is provided with an upper feed port for inserting or removing the wafer 9 into or from the upper cavity of the pre-extraction cavity 11.

[0089] In the wafer metal coating system of Embodiment 3, the wafer support assembly 7 in the upper cavity of the pre-extraction cavity 11 of the wafer pre-extraction device 1 is used to place the wafer 9 to be coated. Each layer of the wafer support assembly 7 is provided with a pair of supports arranged on the left and right, so that the robot can simultaneously grab two wafers and send them into the paired chambers of the metal coating process device.

[0090] Example 4

[0091] Based on Embodiment 3, the wafer metal coating system further includes a metal coating process device 2;

[0092] like Figure 4 As shown, the metal coating process apparatus 2 has at least one pair of chambers 21;

[0093] The wafer to be coated is placed in the chamber 21 to perform the metal coating process, forming a metal film on the wafer surface;

[0094] The distance d between the two chambers 21 of each pair of chambers is 5mm to 15mm.

[0095] Preferably, a heat-insulating material is provided between the two chambers 21 of each pair of chambers; the distance between the two chambers 21 of each pair of chambers can be shortened, for example, to 4mm to 10mm.

[0096] In the wafer metal coating system of Example 4, the two chambers 21 of each pair of chambers in the metal coating process device 2 are spaced far apart, which can reduce the temperature influence between the two chambers. Even in high-temperature processes where the chamber wall temperature is greater than 150°C, the temperature of each chamber can be independently and accurately controlled.

[0097] Example 5

[0098] Based on the wafer metal coating system of Embodiment 4, the chamber 21 of the metal coating process apparatus 2 is divided into an upper chamber 211 and a lower chamber 212.

[0099] A spray plate 213 is provided inside the upper chamber 211;

[0100] The spray plate 213 is used to inject process gas into the upper chamber 211;

[0101] An exhaust ring groove 214 is formed around the periphery of the upper chamber 211;

[0102] The exhaust ring groove 214 is connected to an exhaust hole 215, which is used to exhaust the gas in the chamber 21 of the metal coating process device 2 to the outside of the chamber 21.

[0103] A wafer carrier 216 that can move up and down is provided in the lower chamber 212;

[0104] The side wall of the lower chamber 212 is provided with a coating feed port for inserting or removing the wafer 9 into the lower chamber 212.

[0105] Example 6

[0106] Based on Embodiment 4, the wafer metal coating system further includes a wafer acquisition device 8;

[0107] like Figure 5 As shown, the wafer acquisition device 8 includes a rear arm 81, a forearm 82, and a U-shaped hand 83;

[0108] The forearm 82 is connected to the head end of the hindarm 81 by a joint at the tail end.

[0109] The tail joint of the U-shaped hand 83 is connected to the head end of the forearm 82, and the two fingertips of the U-shaped hand 83 are respectively equipped with a capture head;

[0110] The distance between the two fingertips of the U-shaped hand 83, the distance from the center of the left wafer lifting base 12 to the center of the right wafer lifting base 13, and the distance between the centers of the two chambers 21 of each pair of chambers are the same.

[0111] Better, such as Figure 6 As shown, at least one of the rear arm 81, forearm 82, and U-shaped hand 83 is provided with a reinforcing rib 84.

[0112] Preferably, the rear arm 81, forearm 82 and U-shaped hand 83 are made of titanium.

[0113] Example 7

[0114] A wafer metal deposition method using the wafer metal deposition system of Example Six, such as Figure 7 As shown, it includes the following steps:

[0115] S1. Transfer the wafer 9 to be coated onto the wafer carrier 216 in the metal coating process device 2;

[0116] S2. The metal coating process is completed on the wafer 9 on the wafer carrier 216 by the metal coating process device 2;

[0117] S3. The wafer 9 in a pair of chambers 21 of the metal coating process device 2 is picked up by the two pick-up heads of the U-shaped hand 83 of the wafer pick-up device 8 and sent into the left wafer lifting base 12 and right wafer lifting base 13 in the lower cavity of the wafer pre-extraction device 1 in a vacuum environment.

[0118] S4. After the wafer 9 in the lower cavity of the wafer pre-extraction device 1 is cooled to below the set temperature, it is transferred to the wafer cassette.

[0119] Preferably, in step S1, the wafer 9 to be coated is first transferred to the support of the wafer support assembly 7 in the upper cavity of the wafer pre-extraction device 1, and then the wafer taking device 8 transfers the wafer 9 to be coated on the support of the wafer support assembly 7 in the upper cavity of the wafer pre-extraction device 1 to the wafer carrier 216 in the metal coating process device 2.

[0120] Preferably, in step S2, the metal coating process temperature exceeds 400°C.

[0121] In the wafer metal coating method of Example 7, after the metal coating process of two wafers 9 in the paired chambers 21 of the metal coating process apparatus 2 is completed, the two wafers 9 are sent into the left wafer lifting base 12 and the right wafer lifting base 13 in the lower chamber of the pre-extraction chamber 11 of the wafer pre-extraction device 1 by a vacuum robot in a vacuum environment. The up and down movement of the left wafer lifting base 12 and the right wafer lifting base 13 can make the two wafers 9 have gaps with the left water cooling plate 14 and the right water cooling plate 15 or fit against the upper surface of the left water cooling plate 14 and the right water cooling plate 15. The coolant flowing through the water cooling pipes 16 of the left water cooling plate 14 and the right water cooling plate 15 can realize the rapid natural cooling of the two wafers 9. When the two wafers 9 are taken out after cooling and transferred to the wafer box in the air environment for storage, the metal film on their surface will not be oxidized due to exposure to the oxygen-containing environment.

[0122] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A wafer metal coating system, characterized in that, It includes wafer pre-extraction device (1); The wafer pre-extraction device (1) includes a pre-extraction cavity (11), a left wafer lifting base (12), a right wafer lifting base (13), a left water cooling disc (14) and a right water cooling disc (15). The pre-extraction cavity (11) is divided into two cavities by a transverse partition (18); the left water cooling disc (14) and the right water cooling disc (15) are arranged in the lower cavity, the left water cooling disc (14) is fixedly installed on the left part of the bottom plate of the pre-extraction cavity (11), and the right water cooling disc (15) is fixedly installed on the right part of the bottom plate of the pre-extraction cavity (11). The left water cooling disc (14) and the right water cooling disc (15) are provided with water cooling pipes (16) therein, the left water cooling disc (14) and the right water cooling disc (15) are used for carrying and cooling wafers (9), wherein the upper surfaces of the left water cooling disc (14) and / or the right water cooling disc (15) are uniformly formed with a plurality of protrusions (19), so that there is a gap between the upper surfaces of the left water cooling disc (14) and / or the right water cooling disc (15) and the carried wafers (9). The water inlet and the water outlet of the water cooling pipe (16) are communicated to the outside of the pre-extraction cavity (11). The left wafer lifting base (12) is arranged at the center of the left water cooling disc (14) and can move the wafer (9) on the left water cooling disc (14) up and down relative to the left water cooling disc (14). The right wafer lifting base (13) is arranged at the center of the right water cooling disc (15) and can move the wafer (9) on the right water cooling disc (15) up and down relative to the right water cooling disc (15). The side wall of the lower cavity of the pre-extraction cavity (11) is provided with a lower feeding port for placing or taking out the wafer (9) into or from the lower cavity of the pre-extraction cavity (11).

2. The wafer metal plating system of claim 1, wherein, The base driving structure (17) is fixed to the lower side of the pre-extraction cavity (11), and the base driving structure (17) is used for driving the left wafer lifting base (12) and the right wafer lifting base (13) to lift.

3. The wafer metal plating system of claim 1, wherein, At least one of the water inlet and the water outlet of the water cooling pipe (16) is communicated to the lower side of the bottom plate of the pre-extraction cavity (11).

4. The wafer metal plating system of claim 1, wherein, At least one of the water inlet and the water outlet of the water cooling pipe (16) is communicated to the outside of the side wall of the pre-extraction cavity (11).

5. The wafer metal plating system of claim 1, wherein, The protrusions (19) are made of ceramic material.

6. The wafer metal plating system of claim 1, wherein, The water cooling pipes (16) arranged in the left water cooling disc (14) and the right water cooling disc (15) are spiral-shaped.

7. The wafer metal plating system of claim 1, wherein, The upper cavity of the pre-extraction cavity (11) of the wafer pre-extraction device (1) is provided with a wafer supporting assembly (7); each layer of the wafer supporting assembly (7) is provided with a pair of left and right supporting bodies; the distance from the center of the left supporting body (71) to the center of the right supporting body (72) is equal to the distance from the center of the left wafer lifting base (12) to the center of the right wafer lifting base (13); the side wall of the upper cavity of the pre-extraction cavity (11) is provided with an upper feeding port for placing or taking out the wafer (9) into or from the upper cavity of the pre-extraction cavity (11).

8. The wafer metal plating system of claim 7, wherein, The wafer metal plating system further comprises a metal plating process device (2); the metal plating process device (2) has at least one pair of cavities (21); the wafer to be plated is placed in the cavity (21) to perform the metal plating process, so as to form a metal film on the wafer surface; the distance between the two cavities (21) of each pair of cavities is 5mm-15mm.

9. The wafer metal plating system of claim 8, wherein, Thermal insulation material is arranged between the two chambers (21) of each pair of chambers.

10. The wafer metal plating system of claim 8, wherein, The chamber (21) of the metal plating process device (2) is divided into an upper chamber (211) and a lower chamber (212); the upper chamber (211) is provided with a spraying plate (213); the spraying plate (213) is used for injecting process gas into the upper chamber (211); the periphery of the upper chamber (211) is formed with an exhaust ring groove (214); the exhaust ring groove (214) is communicated with an exhaust hole (215) for exhausting the gas in the chamber (21) of the metal plating process device (2) to the outside of the chamber (21); the lower chamber (212) is provided with a wafer carrier (216) capable of moving up and down; the sidewall of the lower chamber (212) is provided with a plating feeding port for placing or taking out the wafer (9) into or from the lower chamber (212).

11. The wafer metal plating system of claim 8, wherein, The wafer metal plating system further comprises a wafer taking device (8); the wafer taking device (8) comprises a rear arm (81), a front arm (82) and a U-shaped hand (83); the tail end of the front arm (82) is jointedly connected with the head end of the rear arm (81); the tail end of the U-shaped hand (83) is jointedly connected with the head end of the front arm (82), and two fingers of the U-shaped hand (83) are respectively provided with a taking head; the distance between the two fingers of the U-shaped hand (83), the distance from the center of the left wafer lifting base (12) to the center of the right wafer lifting base (13) and the distance between the centers of the two chambers (21) of each pair of chambers are the same.

12. The wafer metal plating system of claim 11, wherein, At least one of the rear arm (81), the front arm (82) and the U-shaped hand (83) is provided with a reinforcing rib (84).

13. The wafer metal plating system of claim 11, wherein, The rear arm (81), the front arm (82) and the U-shaped hand (83) are made of titanium.

14. A wafer metal plating method using the wafer metal plating system of claim 11, characterized by, The method comprises the following steps: S1. conveying the wafer (9) to be plated into the wafer carrier (216) in the metal plating process device (2); S2. completing the metal plating process of the wafer (9) on the wafer carrier (216) by the metal plating process device (2); S3. taking the wafer (9) in a pair of chambers (21) of the metal plating process device (2) by the two taking heads of the U-shaped hand (83) of the wafer taking device (8), and sending the wafer (9) into the left wafer lifting base (12) and the right wafer lifting base (13) in the lower cavity of the wafer pre-evacuation device (1) in a vacuum environment; S4. after the wafer (9) in the lower cavity of the wafer pre-evacuation device (1) is cooled to below a set temperature, conveying the wafer (9) to a wafer box.

15. The wafer metal plating method of claim 14, wherein In step S1, the wafer (9) to be plated is first conveyed to the support body of the wafer support assembly (7) in the upper cavity of the wafer pre-evacuation device (1), and then the wafer taking device (8) conveys the wafer (9) to be plated on the support body of the wafer support assembly (7) in the upper cavity of the wafer pre-evacuation device (1) to the wafer carrier (216) in the metal plating process device (2).

16. The wafer metal plating method of claim 14, wherein In step S2, the metal plating process temperature is more than 400℃.

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