A three-dimensional sputter deposition collection device under multiple azimuth angles

Abstract

The application discloses a three-dimensional sputtering deposition collection device under multiple azimuth angles, comprising a vacuum chamber, a supporting bottom plate and a radio frequency ion thruster are arranged in the vacuum chamber, a sputtering deposition three-dimensional collection mechanism is detachably installed on the top of the supporting bottom plate, a target material is arranged at the top end of the supporting bottom plate, the target material is arranged on the inner side of the sputtering deposition three-dimensional collection mechanism, the radio frequency ion thruster is arranged above the sputtering deposition three-dimensional collection mechanism, the radio frequency ion thruster is used for generating an ion beam, and the ion beam is used for bombarding the target material. The application collects the sputtering deposition quality of the target material under multiple azimuth angles through experiments, based on the demand of monitoring the three-dimensional spherical sputtering area generated by the sputtering particles after the target material is bombarded by ions, the three-dimensional sputtering area monitoring of different ion bombardment incident angles is realized by arranging the target material and the three-dimensional sputtering deposition collection device at different angles. The application is composed of a mechanical structure, is easy to assemble, simple to process, convenient to use and stable in data acquisition.

Description

Technical Field

[0001] This invention belongs to the field of space electric propulsion sputtering deposition technology, and particularly relates to a three-dimensional sputtering deposition collection device under multi-azimuth angles. Background Technology

[0002] Space electric thrusters, due to their long operating time, are widely used in deep space exploration and long-duration on-orbit satellite missions, typically operating for thousands to tens of thousands of hours. However, the operation of electric thrusters involves sputtering deposition, a phenomenon where high-speed ions bombard the materials of internal thruster components, ejecting them. This causes significant corrosion and wear on thruster components over long periods, reducing the thruster's lifespan. Therefore, sputtering deposition within electric thrusters is a crucial research area in space electric propulsion. For example, in mainstream electric thrusters such as Hall thrusters and ion thrusters, sputtering deposition is a key factor leading to thruster failure. The failure of the Hall thruster was caused by corrosion of the wall material of the discharge chamber due to high-speed ion bombardment, leading to a decline in thruster performance and eventual failure. Ion thruster failure can be categorized into two aspects: first, ion bombardment of the internal gate components corrodes and damages the original structure, causing structural failure and electron backflow, ultimately resulting in decreased thruster performance or even complete failure; second, the gate material detached after ion bombardment sputtering deposits at other locations, causing changes in the local potential of the gate, or even short circuits, reducing ion extraction capability and further degrading thruster performance. Therefore, it is necessary to use systematic equipment to study and monitor the sputtering deposition phenomenon of materials.

[0003] Currently, ground-based electric propulsion sputtering deposition monitoring systems are established in vacuum chambers. These systems provide ion beams with the same operating parameters and target materials with the same properties as those used in actual space electric thruster operation to monitor ion-to-material sputtering deposition phenomena. However, current devices used for monitoring sputtering deposition suffer from problems such as high cost, complex equipment, and long processing times. Summary of the Invention

[0004] The purpose of this invention is to provide a three-dimensional sputtering deposition collection device under multi-azimuth angles to solve the problems existing in the prior art.

[0005] To achieve the above objectives, the present invention provides a three-dimensional sputtering deposition collection device under multi-azimuth angles, including a vacuum chamber, a supporting base plate and a radio frequency ion thruster disposed inside the vacuum chamber, a sputtering deposition three-dimensional collection mechanism detachably mounted on the top of the supporting base plate, a target material disposed at the top of the supporting base plate, the target material being disposed inside the sputtering deposition three-dimensional collection mechanism, and the radio frequency ion thruster being disposed above the sputtering deposition three-dimensional collection mechanism, the radio frequency ion thruster being used to generate an ion beam, the ion beam being used to bombard the target material.

[0006] Preferably, the sputtering deposition three-dimensional collection mechanism includes a plurality of support seats arranged circumferentially along the target material, the support seats being detachably mounted on the support base plate and located below the target material; an arc-shaped bracket is fixedly connected to the top of the end of each support seat away from the target material, and a plurality of metal blocks are detachably mounted on the arc-shaped bracket along the vertical direction.

[0007] Preferably, the arc-shaped bracket has a plurality of mounting holes along the vertical direction. The diameter of the mounting holes on the side closer to the target material is smaller than the diameter of the mounting holes on the side farther away from the target material. The metal block is installed in the mounting holes, and the curvature of the end face of the metal block on the side closer to the target material is the same as the curvature of the arc-shaped bracket.

[0008] Preferably, the area occupied by the metal block on the side of the arc-shaped support closest to the target material is not less than 60%.

[0009] Preferably, a U-shaped clip is fixedly connected to the end of the support base away from the arc-shaped bracket, the top surface of the U-shaped clip is flush with the top surface of the support base, and the support base is fixedly connected to the support base plate through the U-shaped clip.

[0010] Preferably, a connecting rod is fixedly connected to the side of the metal block away from the target material, and the connecting rod has a clamping groove.

[0011] Preferably, the central angle between the uppermost metal block and the lowermost metal block on the same arc-shaped support is not less than 80° and not greater than 90°.

[0012] Preferably, the metal block is an iron block.

[0013] Preferably, the arc-shaped bracket is composed of several arc-shaped pieces spliced ​​together, and each arc-shaped piece has several mounting holes for mounting the metal block.

[0014] Compared with the prior art, the present invention has the following advantages and technical effects:

[0015] This invention provides a three-dimensional sputtering deposition collection device under multi-azimuth angles. It experimentally collects the sputtering deposition mass of target materials at multiple angles. Based on the need to monitor the three-dimensional spherical sputtering region generated by sputtered particles after ion bombardment of the target, the device monitors the three-dimensional sputtering region at different ion bombardment incident angles by arranging the target and the three-dimensional sputtering deposition collection device at different angles. This invention employs a mechanical structure, making it easy to assemble, simple to manufacture, convenient to use, and providing stable data acquisition. The invention arranges metal block arrays at different angles on each arc-shaped support. The mass difference between the metal blocks at different positions in three-dimensional coordinates is measured using a microgram-level electronic scale to monitor the sputtering deposition phenomenon at different angles. By collecting the sputtering amount in three-dimensional space, the overall three-dimensional characteristics of the sputtering deposition phenomenon are depicted. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the overall structure of the three-dimensional sputtering deposition collection device of the present invention;

[0018] Figure 2 This is a right view of the three-dimensional sputtering deposition collection device of the present invention;

[0019] Figure 3 This is a schematic diagram of the arc-shaped bracket in Embodiment 1 of the present invention;

[0020] Figure 4 This is a schematic diagram of the arc-shaped support structure in Embodiment 2 of the present invention;

[0021] Figure 5 This is a schematic diagram of the three-dimensional sputtering deposition collection device in Embodiment 2 of the present invention;

[0022] The components include: 1. Radio frequency ion thruster; 2. Target material; 3. Support base plate; 4. Support seat; 5. Arc-shaped bracket; 6. Metal block; 7. Mounting hole; 8. U-shaped clamp; 9. Connecting rod; 10. Clamping slot. Detailed Implementation

[0023] It should be noted that, unless otherwise specified, the embodiments and features described in this invention can be combined with each other. The described embodiments are merely some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this invention. The invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0024] Example 1

[0025] This invention provides a three-dimensional sputtering deposition collection device under multi-azimuth angle, including a vacuum chamber, a supporting base plate 3 and a radio frequency ion thruster 1 are arranged inside the vacuum chamber, a sputtering deposition three-dimensional collection mechanism is detachably installed on the top of the supporting base plate 3, a target material 2 is arranged at the top of the supporting base plate 3, the target material 2 is arranged inside the sputtering deposition three-dimensional collection mechanism, and the radio frequency ion thruster 1 is arranged above the sputtering deposition three-dimensional collection mechanism. The radio frequency ion thruster 1 is used to generate an ion beam, and the ion beam is used to bombard the target material 2.

[0026] Furthermore, the sputtering deposition three-dimensional collection mechanism includes several support seats 4 arranged around the target material 2. The support seats 4 are detachably installed on the support base plate 3 and are located below the target material 2. An arc-shaped bracket 5 is fixedly connected to the top of the end of any support seat 4 away from the target material 2. Several metal blocks 6 are detachably installed on the arc-shaped bracket 5 in the vertical direction. The metal blocks 6 are iron blocks.

[0027] Furthermore, the arc-shaped bracket 5 has several mounting holes 7 along the vertical direction. The diameter of the mounting hole 7 on the side closer to the target material 2 is smaller than the diameter of the mounting hole 7 on the side farther away from the target material 2. The metal block 6 is installed in the mounting hole 7, and the curvature of the end face of the metal block 6 on the side closer to the target material 2 is the same as the curvature of the arc-shaped bracket 5.

[0028] Furthermore, the area occupied by the metal block 6 on the side of the arc-shaped support 5 closest to the target material 2 is not less than 60%.

[0029] Furthermore, a U-shaped clip 8 is fixedly connected to the end of the support base 4 away from the arc-shaped bracket 5. The top surface of the U-shaped clip 8 is flush with the top surface of the support base 4, and the support base 4 is fixedly connected to the support base plate 3 through the U-shaped clip 8.

[0030] Furthermore, a connecting rod 9 is fixedly connected to the side of the metal block 6 away from the target material 2, and a clamping groove 10 is provided on the connecting rod 9 to facilitate the use of tweezers for weighing.

[0031] Furthermore, the central angle between the uppermost metal block 6 and the lowermost metal block 6 on the same arc-shaped support 5 is not less than 80° and not greater than 90°, which can realize the sputtering deposition monitoring of the target material 2 at positions from 10° to 80° in the vertical direction.

[0032] Example 2

[0033] The difference between this embodiment and Embodiment 1 is that the arc-shaped bracket 5 can be spliced ​​from multiple arc-shaped pieces. Each arc-shaped piece has several mounting holes 7 for mounting the metal block 6. In this case, the central angle corresponding to the arc-shaped bracket 5 is determined by the number of spliced ​​arc-shaped pieces. The arc-shaped bracket 5 can be freely spliced ​​according to the required incident angle of the radio frequency ion thruster 1, thereby realizing arbitrary angle incident and arbitrary angle monitoring.

[0034] The method of using the three-dimensional sputtering deposition collection device under multi-azimuth angles provided by the present invention includes the following steps:

[0035] S1. Determine the location for collecting iron blocks, mark it, and weigh all the iron blocks.

[0036] S2. Determine the incident angle of the ion beam generated by the radio frequency ion thruster 1 bombarding the target material 2, select the material of the target material 2, place the target material 2 in the corresponding position, and splice the arc-shaped bracket 5 to allow the radio frequency ion thruster 1 to be incident at the selected angle.

[0037] S3. Determine the location where sputtering needs to be measured, place the three-dimensional sputtering deposition collection device at the corresponding angle, and obtain the sputtered iron block through an experiment over a certain period of time.

[0038] S4. Weigh the iron block after sputtering to obtain the degree of sputtering deposition at different azimuth angles;

[0039] S5. Repeat the operations from S1 to S4, and conduct multiple experiments to improve measurement accuracy.

[0040] During the process, when the target material 2 is placed, the position of the radio frequency ion thruster 1 is fixed. By adjusting the angle of the target material 2, the position of the target material 2 is made to meet the placement requirements.

[0041] This invention utilizes a three-dimensional sputtering deposition collection device under multiple azimuth angles to experimentally collect the sputtering deposition mass of target 2 at multiple azimuth angles. Based on the need to monitor the three-dimensional spherical sputtering region generated by sputtered particles after ion bombardment of target 2, the device is positioned at different angles to monitor the three-dimensional sputtering region at different ion bombardment incident angles. This invention employs a mechanical structure, making it easy to assemble, simple to process, convenient to use, and providing stable data acquisition. The invention arranges metal block arrays 6 at different angles on each arc-shaped support 5. The mass difference between the metal blocks 6 at different positions in three-dimensional coordinates is measured using a microgram-level electronic scale to monitor the sputtering deposition phenomenon at different angles. By collecting the sputtering amount in three-dimensional space, the overall three-dimensional characteristics of the sputtering deposition phenomenon are depicted.

[0042] The above are merely preferred embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A three-dimensional sputtering deposition collection device under multi-azimuth angles, comprising a vacuum chamber, characterized in that, The vacuum chamber is equipped with a support base plate (3) and a radio frequency ion thruster (1). A sputtering deposition three-dimensional collection mechanism is detachably installed on the top of the support base plate (3). A target material (2) is provided at the top of the support base plate (3). The target material (2) is located inside the sputtering deposition three-dimensional collection mechanism. The radio frequency ion thruster (1) is located above the sputtering deposition three-dimensional collection mechanism. The radio frequency ion thruster (1) is used to generate an ion beam, which is used to bombard the target material (2). The sputtering deposition three-dimensional collection mechanism includes several support seats (4) arranged circumferentially along the target material (2). The support seats (4) are detachably installed on the support base plate (3) and are located below the target material (2). An arc-shaped bracket (5) is fixedly connected to the top of the end of any support seat (4) away from the target material (2). Several metal blocks (6) are detachably installed on the arc-shaped bracket (5) in the vertical direction. The curvature of the end face of the metal block (6) near the target material (2) is the same as the curvature of the arc-shaped bracket (5).

2. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 1, characterized in that, The arc-shaped bracket (5) has several mounting holes (7) along the vertical direction. The diameter of the mounting hole (7) on the side closer to the target material (2) is smaller than the diameter of the mounting hole (7) on the side farther away from the target material (2). The metal block (6) is installed in the mounting hole (7).

3. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 2, characterized in that, The area occupied by the metal block (6) on the side of the arc-shaped support (5) close to the target (2) is not less than 60%.

4. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 1, characterized in that, A U-shaped clip (8) is fixedly connected to one end of the support base (4) away from the arc-shaped bracket (5). The top surface of the U-shaped clip (8) is flush with the top surface of the support base (4). The support base (4) is fixedly connected to the support base plate (3) through the U-shaped clip (8).

5. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 1, characterized in that, A connecting rod (9) is fixedly connected to the side of the metal block (6) away from the target material (2), and a clamping groove (10) is provided on the connecting rod (9).

6. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 1, characterized in that, The central angle between the uppermost metal block (6) and the lowermost metal block (6) on the same arc-shaped bracket (5) shall be no less than 80° and no greater than 90°.

7. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 1, characterized in that, The metal block (6) is an iron block.

8. The three-dimensional sputtering deposition collection device under multi-azimuth angles according to claim 1, characterized in that, The arc-shaped bracket (5) is composed of several arc pieces spliced ​​together, and each arc piece has several mounting holes (7) for mounting the metal block (6).

Images