Capacitive coupled resonator for high frequency current isolator

Abstract

The present disclosure relates to a capacitively coupled resonator for a high frequency current isolator. An isolator for high frequency signals transmitted between two circuits configured to operate at different voltage domains is provided. The isolator can include a resonator capable of operating at high frequency with high bandwidth, high transmission efficiency, high isolation rating, and small substrate footprint. In some embodiments, the isolator can operate at frequencies not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within this range. The isolator can include isolator components that are electrically isolated from each other and capacitively coupled. The dimensions and shapes of the isolator components can be configured to control the values of the equivalent inductance and capacitance of the isolator to facilitate resonance in operation. The isolator is compatible with different manufacturing processes, including, for example, microfabrication and PCB manufacturing processes.

Description

Technical Field

[0001] This application relates to current isolators that provide current isolation between circuits. Background Technology

[0002] Isolators provide electrical isolation between communicating circuits. In some cases, communicating circuits operate at different voltages, for example, one at a relatively high voltage and the other at a lower voltage. In other cases, the circuits reference different ground potentials. Isolators can be used to provide electrical isolation between circuits in either of these situations. Connecting multiple isolators in series can increase the degree of isolation between circuits. Summary of the Invention

[0003] An isolator is provided for transmitting high-frequency signals between two circuits configured to operate in different voltage domains. The isolator may include a resonator capable of operating at high frequencies with high bandwidth, high transmission efficiency, high isolation ratings, and a small substrate footprint. In some embodiments, the isolator may operate at frequencies not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range within that range. The isolator may include isolator components that are electrically isolated from and capacitively coupled to each other. The size and shape of the isolator components may be configured to control the values ​​of the isolator's equivalent inductance and capacitance to facilitate resonance during operation. The isolator is compatible with various manufacturing processes, including, for example, microfabrication and PCB manufacturing processes.

[0004] Some embodiments relate to integrated isolator devices. An integrated isolator device may include: a substrate; an insulating layer on the substrate; a first pair of conductive plates, including a first conductive plate and a second conductive plate separated from each other by the insulating layer; and a second pair of conductive plates, including a third conductive plate and a fourth conductive plate separated from each other by the insulating layer. The first and third conductive plates may be located in a first metallization layer and separated from each other by a first gap with a size between 10 μm and 80 μm, such that the integrated isolator device can operate at frequencies between 20 GHz and 200 GHz.

[0005] In some embodiments, the second conductive plate and the fourth conductive plate may be located in a second metallization layer separated from the first metallization layer by the insulating layer. The second conductive plate and the fourth conductive plate may be separated from each other by a first gap with a size between 10 μm and 80 μm.

[0006] In some embodiments, the integrated isolator device may include: a first pair of traces, including a first trace extending from the first conductive plate and a second trace extending from the third conductive plate; and a second pair of traces, including a third trace extending from the second conductive plate and a fourth trace extending from the fourth conductive plate. The first pair of traces and the second pair of traces are shaped and sized to provide capacitance and inductance such that a first isolator component including the first conductive plate, the third conductive plate, and the first pair of traces resonates with a second isolator component including the second conductive plate, the fourth conductive plate, and the second pair of traces.

[0007] In some embodiments, the first pair of traces and the second pair of traces may be rotationally symmetric.

[0008] In some embodiments, the length of the first conductive plate can be between 200 μm and 800 μm, and the width is such that the ratio of the length to the width of the conductive plate is between 1.5 and 3.5.

[0009] In some embodiments, the first and second traces in the first pair of traces can be separated from each other by a second gap, the size of which is set to be smaller than the first gap between the first conductive plate and the third conductive plate.

[0010] In some embodiments, the dimensions of the first pair of conductive plates and the second pair of conductive plates can be set such that the integrated isolator device has a characteristic impedance between 50 ohms and 150 ohms.

[0011] In some embodiments, the insulating layer may include a first insulating layer of a first material and a second insulating layer of a second material, the second material being different from the first material and stacked on top of the first insulating layer.

[0012] In some embodiments, the thickness of the insulating layer can be between 20 μm and 150 μm.

[0013] In some embodiments, the width and length of the first conductive plate can be configured to have a diameter of 0.005 mm. 2 and 0.05mm 2 The product of the values ​​between them.

[0014] Some embodiments relate to an integrated isolator device. The integrated isolator device may include: a substrate; an insulating layer on the substrate; a first pair of conductive plates, including a first conductive plate and a second conductive plate separated from each other by the insulating layer; a second pair of conductive plates, including a third conductive plate and a fourth conductive plate separated from each other by the insulating layer; a third pair of conductive plates, including a fifth conductive plate and a sixth conductive plate separated from each other by the insulating layer; a fourth pair of conductive plates, including a seventh conductive plate and an eighth conductive plate separated from each other by the insulating layer; a first trace extending and electrically coupled between the first conductive plate and the fifth conductive plate; and a second trace extending and electrically coupled between the third conductive plate and the seventh conductive plate. The first and third conductive plates may be located in a first metallization layer and separated from each other by a first gap having a first value. The first trace and the second trace may be separated from each other by a second gap having a second value. The second value may be less than the first value. The second and fourth conductive plates may be configured to receive an input signal. The sixth and eighth conductive plates may be configured to provide an output signal.

[0015] In some embodiments, the fifth and seventh conductive plates may be located within the first metallization layer. The second, fourth, sixth, and eighth conductive plates may be located within a second metallization layer separated from the first metallization layer by the insulating layer.

[0016] In some embodiments, the integrated isolator device may include a first pair of traces, including a third trace extending from the second conductive plate and a fourth trace extending from the fourth conductive plate. The third trace and the fourth trace may be separated by a third gap having a second value.

[0017] In some embodiments, the integrated isolator device may include a second pair of traces, including a fifth trace extending from the sixth conductive plate and a sixth trace extending from the eighth conductive plate. The first pair of traces and the second pair of traces may be rotationally symmetrical.

[0018] In some embodiments, the first trace and the second trace are symmetrical.

[0019] In some embodiments, the length of the first conductive plate can be between 200 μm and 800 μm.

[0020] Some embodiments relate to a system. This system may include an integrated isolator device, comprising: an insulating layer; a first pair of conductive plates including a first conductive plate and a second conductive plate separated from each other by the insulating layer; and a second pair of conductive plates including a third conductive plate and a fourth conductive plate separated from each other by the insulating layer. The system may include: a transmitter coupled to a first isolator component including the first and third conductive plates and configured to operate in a first voltage domain; and a receiver coupled to a second isolator component including the second and fourth conductive plates and configured to operate in a second voltage domain different from the first voltage domain. The first and third conductive plates are located in a first metallization layer and are separated from each other by a first gap with a size between 10 μm and 80 μm.

[0021] In some embodiments, the voltage difference between the first voltage domain and the second voltage domain is between 100V and 2kV.

[0022] In some embodiments, the system may include a substrate. The integrated isolator device, transmitter, and receiver may be located on the substrate and coupled through one or more redistribution layers.

[0023] In some embodiments, the system may include a printed circuit board including the first metallization layer and the second metallization layer. A second pair of conductive plates of the integrated isolator device may be located within the second metallization layer of the printed circuit board.

[0024] These techniques can be used alone or in any suitable combination. The above overview is provided by way of illustration and is not intended to be limiting. Attached Figure Description

[0025] The accompanying drawings are not to scale. In the drawings, each identical or nearly identical component shown in the various figures is represented by the same numbers. For clarity, not every component is labeled in every drawing. In the drawings:

[0026] Figure 1 This is a simplified schematic diagram of a system including an integrated isolator device according to some embodiments.

[0027] Figure 2 This is a schematic perspective view of an integrated isolator device according to some embodiments.

[0028] Figure 3A According to some embodiments Figure 2 A schematic diagram of the conductive plate of the integrated isolator device.

[0029] Figure 3B According to some embodiments Figure 3A A schematic diagram of a capacitor model with a conductive plate.

[0030] Figure 3C According to some embodiments Figure 3A A schematic diagram of the equivalent circuit of the conductive plate.

[0031] Figure 4 According to some embodiments Figure 2 A schematic diagram of an integrated isolator device, with the dimensions of the traces marked.

[0032] Figure 5A According to some embodiments Figure 2 A circuit diagram illustrating the effective configuration of the integrated isolator device in the first operating mode.

[0033] Figure 5B According to some embodiments Figure 2 A circuit diagram illustrating the effective configuration of the integrated isolator device in the second operating mode.

[0034] Figure 5C According to some embodiments Figure 2 A schematic diagram of the effective configuration of the integrated isolator device in the third operating mode.

[0035] Figure 5D According to some embodiments Figure 2 A schematic diagram of the effective configuration of the integrated isolator device in the fourth operating mode.

[0036] Figure 6 According to some embodiments Figure 2 A schematic diagram of the analog impedance-frequency results of the integrated isolator device.

[0037] Figure 7A This is a schematic perspective view of an integrated isolator device with a back-to-back configuration according to some embodiments.

[0038] Figure 7B According to some embodiments Figure 7A A cross-sectional view of the integrated isolator device on the plane marked 7B.

[0039] Figure 8 This is a cross-sectional view of a system including an integrated isolator device according to some embodiments.

[0040] Figure 9A This is a top view of a system including an integrated isolator device according to some embodiments.

[0041] Figure 9B According to some embodiments Figure 9A The system is shown in a cross-sectional view along the line marked 9B.

[0042] Figure 10This is a schematic diagram illustrating a portable electronic device incorporating an integrated isolator device according to some embodiments. Detailed Implementation

[0043] This document describes isolators capable of operating at high frequencies with high bandwidth, high transmission efficiency, high isolation levels, and a small substrate footprint. In some embodiments, the isolator can operate at frequencies not less than 20 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range within that range. In some embodiments, the isolator can have a bandwidth not less than 5 GHz, between 5 GHz and 100 GHz, or between 5 GHz and 180 GHz, including any value or range within that range. In some embodiments, the isolator can have a transmission efficiency between 10% and 90%, including any value or range within that range. In some embodiments, the isolator can have an isolation rating between 100 V and 2 kV, including any value or range within that range. In some embodiments, the isolator can have an isolation rating of (100 μm). 2 and (1cm) 2 The substrate footprint between, including any value or range of values ​​within that range. The inventors have recognized and acknowledged that conventional isolators cannot operate at such high bandwidths and such high frequencies while providing sufficient isolation and high transmission efficiency. For example, isolators with closely spaced and magnetically coupled inductors exhibit high transmission efficiency (if the inductors are closely spaced) but poor isolation levels, or vice versa, if the inductors are spaced relatively far apart.

[0044] This application provides isolator devices and methods for high-frequency operation, featuring high bandwidth, high transmission efficiency, high isolation levels, and a small substrate footprint. According to some embodiments, the isolator includes isolator components tuned to operate at the same resonant frequency, such that the isolator components can be spaced further apart, thereby providing a high isolation level while maintaining high transmission efficiency at high frequencies. In some embodiments, the isolator components can be tuned to have a desired characteristic impedance, allowing the isolator to operate at high frequencies with high bandwidth. The inventors have recognized and acknowledged that higher impedance values ​​can lead to bandwidth loss due to parasitic capacitance, while lower impedance values ​​can result in additional power consumption in the drive circuitry. In some embodiments, the desired characteristic impedance can be between 50 Ω and 150 Ω, including any value or range within that range.

[0045] In some embodiments, the isolator components of the isolator may include conductive plates that are electrically isolated from and capacitively coupled to each other. In some embodiments, the conductive plates may be configured to provide the desired equivalent capacitance and inductance of the isolator components to facilitate resonance during operation. In some embodiments, traces may introduce capacitance and inductance into the isolator components in addition to the capacitance and inductance of the conductive plates, such that the isolator components operate at a desired resonant frequency. In some embodiments, the conductive plates may be configured such that the equivalent capacitance and inductance of the isolator components, taking into account the capacitance and inductance of the traces, have desired values ​​to provide not only the desired resonant frequency of the isolator components but also the desired characteristic impedance for the isolator to operate at high frequencies with a high bandwidth.

[0046] In some embodiments, the system may include circuitry operating in different voltage domains. In some embodiments, the voltage difference between the different voltage domains may be greater than 400V, greater than 600V, or greater than 2kV. The system may include isolators to provide current isolation between circuitry operating in different voltage domains. The isolators may also be configured to withstand surge events, for example, in the range of 10kV to 20kV.

[0047] Figure 1 A system 100 including an integrated isolator device 102 according to some embodiments is depicted. The integrated isolator device 102 can provide current isolation between a transmitter 104 and a receiver 106, and can operate in different voltage domains corresponding to, for example, different supply voltages and / or different reference voltages.

[0048] Transmitter 104 can receive signals of various formats, including, for example, digital data with on / off keying (OOK) modulation. Transmitter 104 may include an input buffer 124 to provide the received signal to driver / mixer 108 in a timely manner. Driver / mixer 108 may be configured to tune the frequency of the received signal, at least in part, based on a clock signal (e.g., 30 GHz) from voltage-controlled oscillator (VCO) 110. Transmitter 104 may include a matching network (MN) 112 configured to match the output impedance of transmitter 104 to the input impedance of integrated isolator device 102. Matching network 112 may be configured to account for parasitics 114 caused, for example, by input pads and the interconnection between transmitter 104 and integrated isolator device 102. Matching network 112 may be configured to provide a reasonable quality factor (Q) for the first isolator component 102a coupled to transmitter 104 to produce a flat passband, which reduces jitter.

[0049] The integrated isolator device 102 may include a first isolator component 102a coupled to a transmitter 104 and a second isolator component 102b coupled to a receiver 106. The first isolator component 102a and the second isolator component 102b may be electrically isolated from each other and inductively coupled. The first isolator component 102a and the second isolator component 102b may be positioned to at least partially overlap each other, such that the isolator components are capacitively coupled to each other. The first isolator component 102a and the second isolator component 102b may be configured to have a resonant frequency and a characteristic impedance, the resonant frequency enabling the isolator to operate at high frequencies with high transmission efficiency, and the characteristic impedance enabling the isolator to operate at high frequencies with high bandwidth.

[0050] Receiver 106 can receive signals via a second isolator component 102b. Receiver 106 may include a matching network (MN) 116 configured to match the output impedance of the integrated isolator device 102 to the input impedance of a low-noise amplifier (LNA) 118. Matching network 116 may also be configured to account for parasitic effects. Matching network 116 may be configured to provide a reasonable Q factor for the second isolator component 102b coupled to receiver 106. LNA 118 may be an AC coupled to demodulator 120. Receiver 106 can output data via output buffer 122.

[0051] In some embodiments, the integrated isolator device may include vertically stacked isolator components. Figure 2 An integrated isolator device 200 according to some embodiments is depicted, having a first isolator component 214a and a second isolator component 214b vertically stacked on a substrate 204. The first isolator component 214a can be coupled to a first circuit (e.g., transmitter 104) operating in a first voltage domain. The second isolator component 214b can be coupled to a second circuit (e.g., receiver 106) operating in a second voltage domain. The first isolator component 214a and the second isolator component 214b can be electrically isolated from each other by a distance d. The distance d can be selected such that the transmission efficiency between the first and second isolators is sufficiently effective, for example, with a loss not exceeding 3 dB over the operating bandwidth of the integrated isolator device 200. The distance d can also be selected such that the integrated isolator device 200 can withstand high voltage differences and surge events.

[0052] The first isolator component 214a may include a first conductive plate 202a, a third conductive plate 202c, and a pair of traces including a first trace 204a and a second trace 204b. The second isolator component 214b may include a second conductive plate 202b, a fourth conductive plate 202d, and a pair of traces including a third trace 204c and a fourth trace 204d. The first conductive plate 202a of the first isolator component 214a and the second conductive plate 202b of the second isolator component 214b may be capacitively coupled to each other, for example, by being perpendicularly aligned. The third conductive plate 202c of the first isolator component 214a and the fourth conductive plate 202d of the second isolator component 214b may be capacitively coupled to each other, for example, by being perpendicularly aligned. The first trace 204a, the second trace 204b, the third trace 204c, and the fourth trace 204d may extend from the first conductive plate 202a, the third conductive plate 202c, the second conductive plate 202b, and the fourth conductive plate 202d, respectively. The first trace 204a and the second trace 204b of the first isolator component 214a may not overlap with the second isolator component 214b. The third trace 204c and the fourth trace 204d of the second isolator component 214b may not overlap with the first isolator component 214a.

[0053] The inventors have recognized and understood that conductive plates can be configured such that the equivalent capacitance and inductance of the isolator components have desired values, so as to provide not only the desired resonant frequency for the isolator components, but also the desired characteristic impedance for the isolator. Figure 3A The conductive plates 202a-202d of the integrated isolator device 200 are shown. As shown, each conductive plate may have a length l and a width w. The first conductive plate 202a and the third conductive plate 202c of the first isolator component 214a may be separated by a gap of value g. Similarly, the second conductive plate 202b and the fourth conductive plate 202d of the second isolator component 214b may be separated by a gap of value g. Each conductive plate may generate an internal inductance L, which may be proportional to the following formula: Where μ can represent the permeability of the material surrounding the conductive plate. Although the conductive plate is rectangular in the example shown, those skilled in the art will understand that the conductive plate can have any suitable shape, such as circular or irregular, and the corresponding length and width can be identified within the shape.

[0054] Figure 3B A capacitor model of conductive plates 202a-202d is shown. As shown, the capacitive coupling between the first conductive plate 202a and the second conductive plate 202b results in a parallel-plate capacitance Cp, which is proportional to the following equation: Where ε can represent the dielectric constant of the material of the electrically insulating conductive plate. Similarly, the capacitive coupling between the third conductive plate 202c and the fourth conductive plate 202d can result in a parallel-plate capacitance Cp. The capacitive coupling between the first conductive plate 202a and the fourth conductive plate 202d can result in a diagonal coupling capacitance Cd, which is proportional to the following equation: Where ε can represent the dielectric constant of the material of the electrically insulating conductive plate. Similarly, the capacitive coupling between the third conductive plate 202c and the second conductive plate 202b can result in a diagonal coupling capacitance Cd. The capacitive coupling between the first conductive plate 202a and the third conductive plate 202c can result in a lateral coupling capacitance Cs, which is proportional to the following equation: Here, ε can represent the dielectric constant of the material of the electrically insulating conductive plate. Similarly, the capacitive coupling between the second conductive plate 202b and the fourth conductive plate 202d can result in a side coupling capacitance Cs.

[0055] Figure 3C The equivalent circuit of conductive plates 202a-202d is shown, which will Figure 3B The capacitor model is simplified to a two-port model. In the two-port model, C can represent the internal self-capacitance of the isolator component, which is calculated as follows:

[0056]

[0057] C M The equivalent mutual capacitance between isolator components can be represented and calculated as follows:

[0058] Therefore, the characteristic impedance Ze of the circuit can be calculated using the following relationship:

[0059]

[0060] The inventors have recognized and understood the desired characteristic impedance Z e It can be configured to operate at high frequencies from 50Ω to 150Ω.

[0061] The conductive plate can operate in a series operation mode between a first frequency ω1 and a second frequency ω2, wherein the first frequency ω1 can be connected to... Proportional, the second frequency ω2 can be compared with Proportional. Therefore, the center frequency can be related to... Proportional, bandwidth can be compared with Proportional.

[0062] The inventors have recognized and understood that traces extending from a conductive plate can be configured together with the conductive plate such that the equivalent capacitance and inductance of the isolator components have desired values, providing not only the desired resonant frequency of the isolator components but also the desired characteristic impedance of the isolator for operation at high frequencies and high bandwidths. Figure 4 This is a schematic diagram of an integrated isolator device 200 according to some embodiments, wherein the dimensions of traces 204a-204d are marked.

[0063] A trace may have a width w0 and extend to a length l0. A trace may have one or more portions. As shown, a trace may have three portions 402a, 402b, and 402c, extending to lengths l1, l2, and l3, respectively. Therefore, the length l0 of the trace may be the sum of the lengths l1, l2, and l3 of portions 402a, 402b, and 402c. In the example shown, the first portion 402c may be substantially parallel to the third portion 402c and substantially perpendicular to the second portion 402b. It should be understood that this disclosure is not intended to be limited in this respect, and the portions of the trace may be in any suitable relationship. Although the trace has three portions in the example shown, it should be understood that a trace may include any suitable number of portions, including, for example, two or four. In some embodiments, a trace may include one or more curved portions.

[0064] A pair of traces within the same isolator component can be separated by a gap of value g0. As shown, a pair of traces within an isolator component can be symmetrical. The first pair of traces in the first isolator component 214a and the second pair of traces in the first isolator component 214b can be rotationally symmetrical. It should be understood that traces in the same isolator and / or different isolator components can be shaped similarly or differently. Each trace can generate an internal inductance L0, which can be proportional to the following: μ can represent the permeability of the material surrounding the trace.

[0065] Therefore, the internal inductance L′ of the isolator component can be the sum of the internal inductance L0 of the trace and the internal inductance L of the corresponding conductive plate. A pair of traces in the same isolator component can result in an internal self-capacitance C0, which can be proportional to the following: Where ε can represent the dielectric constant of the material separating the two traces of the pair.

[0066] The internal self-capacitance C0 of the trace can be configured to enable the isolator device to have a wide bandwidth. Figures 5A-5B This is a circuit diagram illustrating the effective configuration of an integrated isolator device 200 in a series operation mode between a first frequency ω1 and a second frequency ω2. The first frequency ω1 can be connected to... Proportional, the second frequency ω2 can be compared with Proportional. Isolator devices operating in series mode can have a bandwidth BW1, which can be equal to ω2-ω1. Figures 5C-5D This is a circuit diagram illustrating the effective configuration of the integrated isolator device 200 in series operation mode between the third frequency ω3 and the fourth frequency ω4. The third frequency ω3 can be connected to... Proportional, the fourth frequency ω4 can be compared with Proportional. Isolator devices operating in series mode can have a bandwidth BW2, which can be equal to ω4-ω3. Figure 6 The simulated impedance-frequency results of an integrated isolator device 200 according to some embodiments are shown.

[0067] The inventors have recognized and realized that the isolator component can be configured to have a wide bandwidth BW, which can be the sum of BW1 and BW2. In some embodiments, the value g0 of the gap between two traces in the isolator component can be configured to be smaller than the value g of the gap between two conductive plates in the isolator component, such that the internal self-capacitance C0 of the trace can be manifested.

[0068] Therefore, the isolator component can be configured to enable the isolator device to operate at high frequencies with high bandwidth, high transmission efficiency, high isolation level, and small substrate coverage area. In some embodiments, the length l and width w of the conductive plate can be on the scale of 100 micrometers. In some embodiments, the length of the conductive plate can be between 200 μm and 800 μm, including any value or range within this range. In some embodiments, the ratio of the length l to the width w of the conductive plate can be between 1.5 and 3.5, including any value or range within this range. In some embodiments, the length l and width w of the conductive plate can be configured to have a length of 0.005 mm. 2 and 0.05mm 2 The product of the values ​​between. In some embodiments, the value g of the gap between the two conductive plates in the isolator component can be between 10 μm and 80 μm, including any value or range of values ​​within that range. In some embodiments, the distance d between the two isolator components can be in the range of 20 μm to 500 μm, in the range of 20 μm to 300 μm, or in the range of 20 μm to 150 μm, including any value or range of values ​​within these ranges.

[0069] In some embodiments, the integrated isolator device may have a back-to-back configuration. In some embodiments, an integrated isolator device with a back-to-back configuration may include a first isolator component coupled to a first circuit operating in a first voltage domain and a second isolator component coupled to a second circuit operating in a second voltage domain. The first and second isolator components may be electrically isolated from each other. The first and second isolator components may be capacitively coupled through multiple isolator elements (e.g., at least two isolator components) to achieve a higher insulation rating and have the cumulative insulation performance of at least two isolator components. The isolator components of the integrated isolator device may be configured to have the same resonant frequency, such that the energy relay through the multiple isolator components can maintain high transmission efficiency, for example, a loss of less than 3 dB over a large operating bandwidth. Figures 7A-7B An integrated isolator device with a back-to-back configuration is described according to some embodiments.

[0070] Figure 7A An integrated isolator device 600 is depicted, which may include a first isolator component 614a coupled to a first circuit (e.g., transmitter 104) operating in a first voltage domain. The integrated isolator device 600 may include a second isolator component 614b coupled to a second circuit (e.g., receiver 106) operating in a second voltage domain. The first isolator component 614a and the second isolator component 614b may be electrically isolated from each other and capacitively coupled.

[0071] The first isolator component 614a and the second isolator component 614b can be capacitively coupled to each other through the third isolator component 614c and the fourth isolator component 614d. The first isolator component 614a and the second isolator component 614b can be disposed in a first plane on the substrate. The third isolator component 614c and the fourth isolator component 614d can be disposed in a second plane on the substrate. The third isolator component 614c and the fourth isolator component 614d can be electrically isolated from the first isolator component 614a and the second isolator component 614b.

[0072] The first isolator component 614a may include a second conductive plate 602b, a fourth conductive plate 602d, and a pair of traces including a third trace 604c and a fourth trace 604d. The second isolator component 614b may include a sixth conductive plate 602f, an eighth conductive plate 602h, and a pair of traces including a fifth trace 604e and a sixth trace 604f. The third trace 604c, the fourth trace 604d, the fifth trace 604e, and the sixth trace 604f may extend from the second conductive plate 602b, the fourth conductive plate 602d, the sixth conductive plate 602f, and the eighth conductive plate 602h, respectively.

[0073] The third isolator component 614c may include a first conductive plate 602a and a third conductive plate 602c. The fourth isolator component 614d may include a fifth conductive plate 602e and a seventh conductive plate 602g. A first trace 604a may extend and be electrically coupled between the first conductive plate 602a and the fifth conductive plate 602e. A second trace 604b may extend and be electrically coupled between the third conductive plate 602c and the seventh conductive plate 602g.

[0074] The second conductive plate 602b of the first isolator component 614a and the first conductive plate 602a of the third isolator component 614c can be capacitively coupled to each other, for example, by being perpendicularly aligned. The fourth conductive plate 602d of the first isolator component 614a and the third conductive plate 602c of the third isolator component 614c can be capacitively coupled to each other, for example, by being perpendicularly aligned. The third trace 604c and the fourth trace 604d of the first isolator component 614a may not overlap with the third isolator component 614c.

[0075] The sixth conductive plate 602f of the second isolator component 614b and the fifth conductive plate 602e of the fourth isolator component 614d can be capacitively coupled to each other, for example, by being perpendicularly aligned. The eighth conductive plate 602h of the second isolator component 614b and the seventh conductive plate 602g of the fourth isolator component 614d can be capacitively coupled to each other, for example, by being perpendicularly aligned. The fifth trace 604e and the sixth trace 604f of the second isolator component 614b may not overlap with the fourth isolator component 614d. The first trace 604a and the second trace 604b may not overlap with the first isolator component 614a and the second isolator component 614b.

[0076] Similar to isolator device 200, the isolator components of isolator device 600 can be configured to enable isolator device 600 to operate at high frequencies with high bandwidth, high transmission efficiency, high isolation level, and small substrate footprint. In some embodiments, the two conductive plates in the isolator components can be separated by a gap of value g1. In some embodiments, the value g1 of the gap between the two conductive plates in the isolator components can be between 10 μm and 80 μm, including any value or range within this range. In some embodiments, the first trace 604a and the second trace 604b can be separated by a gap of value g2, which can be configured to be smaller than the value g1 of the gap between the two conductive plates in the isolator components.

[0077] Despite Figure 7AIn the example shown, the first isolator component 614a and the second isolator component 614b are capacitively coupled to each other through two isolator components. However, it should be understood that the first isolator component 614a and the second isolator component 614b can be capacitively coupled to each other through more than two isolator components, for example, to achieve, for example, a higher isolation rating and to have cumulative isolation performance with an increased number of isolator components. Although in the example shown, the first plane is above the second plane, it should be understood that in some embodiments, the first plane may be located below the second plane. Although the integrated isolator device 600, as shown, includes isolator components fabricated on a single substrate, it should be understood that the integrated isolator device 600 may include isolator components fabricated on different substrates and coupled together by, for example, a bonding technique. For example, the first isolator component 614a and the third isolator component 614c may be fabricated on one substrate, and the second isolator component 614b and the fourth isolator component 614d may be fabricated on another substrate. The third and fourth isolator components 614c and 614d may be electrically shorted together by a bonding wire.

[0078] Figure 7B An integrated isolator device 700 according to some embodiments is described. Figure 7AA cross-sectional view on the plane marked 7B. An integrated isolator device 700 may be fabricated on a substrate 720 and isolated from the substrate 720 by an insulating layer 722. The insulating layer 722 may have a suitable thickness, for example, between 3 μm and 10 μm (e.g., 5.5 μm). A fifth conductive plate 602e may be located in a first metallization layer 742 and covered by an insulating layer 724. The insulating layer 724 may have a suitable thickness, for example, between 3 μm and 10 μm (e.g., 5 μm). One or more pads 732 may be located in the first metallization layer 742 and configured to provide access to a fourth isolator component. The first metallization layer 742 may be formed of a suitable material, such as gold, and may have a suitable thickness, for example, between 2 μm and 9 μm (e.g., 4 μm). A sixth conductive element 602f may be located in a second metallization layer 744 and covered by an insulating layer 730. One or more pads 734 may be located in the second metallization layer 744 and configured to provide access to the second isolator component. The second metallization layer 744 may be formed of a suitable material similar to or different from the first metallization layer 742. The second metallization layer 744 may have a suitable thickness, which may be similar to or different from the first metallization layer 742. The second and fourth isolator components 714b and 714d may be isolated from each other by one or more sensing layers. In the example shown, the fifth conductive plate 602e and the sixth conductive plate 602f may be isolated from each other by two insulating layers 726 and 728. The insulating layers 726 and 728 may have a suitable combined thickness, for example, between 20 μm and 500 μm (e.g., 50 μm). The insulating layers 726 and 728 may have similar or different thicknesses. Although in Figure 7B Examples of materials with thickness are shown, but it should be understood that these examples are not limiting.

[0079] The integrated isolator devices described herein are compatible with a variety of manufacturing processes, including, for example, microfabrication and printed circuit board (PCB) manufacturing processes. It should be understood that the sensing circuits described herein can be used with a variety of manufacturing processes because they are simpler than conventional isolators (e.g., spiral inductors) and can therefore be manufactured using techniques such as PCB processes with coarse design rules. Figure 8 An isolator system 800 manufactured using a redistribution layer (RDL) process according to some embodiments is depicted. Figures 9A-9B An isolator system 900 manufactured using a device in a packaging process according to some embodiments is described.

[0080] Figure 8A cross-sectional view of an isolator system 800 according to some embodiments is depicted. The isolator system 800 may include dies 802, 804, and 806 attached to a substrate 814 (e.g., a wafer). The first die 802 may include an integrated isolator device as described herein. The second die 804 may include a first circuit (e.g., a transmitter 104) operating in a first voltage domain. The third die 806 may include a second circuit (e.g., a receiver 106) operating in a second voltage domain. The dies may be isolated from each other by an insulating layer 808 and coupled to each other by a redistribution layer 812. The insulating layer 808 may be formed of a suitable material, such as a laminate. The redistribution layer 812 may be formed of a suitable material, such as gold. At least a portion of the redistribution layer 812 may be covered by an insulating layer 816 (e.g., polyimide). One or more pads 818 may be located in the redistribution layer 812.

[0081] Figure 9A A top view of an isolator system 900 according to some embodiments is depicted. Figure 9B Depicting along according to some embodiments Figure 9A A cross-sectional view of system 900, marked with line 9B. Isolator system 900 may include an integrated isolator device 902 according to any embodiment described herein. Integrated isolator device 902 may be formed in printed circuit board 910. Integrated isolator device 902 may include a first isolator component 902a formed in a first metallization layer of the PCB, and a second isolator component 902b formed in a second metallization layer of the PCB and electrically isolated from the first isolator component 902a. Isolator system 900 may include dies 904 and 906. First die 904 may include a first circuit (e.g., transmitter 104) operating in a first voltage domain. Second die 906 may include a second circuit (e.g., receiver 106) operating in a second voltage domain. First die 904 and second die 906 may be coupled to integrated isolator device 902 via, for example, solder balls and / or one or more PCB metallization layers. First die 904 and second die 906 may be covered by a molding layer 908 formed of a suitable material such as polyimide.

[0082] The integrated isolator devices of the type described herein can be used in a variety of devices and setups. For example, integrated isolator devices can be used for isolation in medical device systems, industrial device systems, physical measurement systems, or personal or portable electronic devices. Figure 10This is a schematic diagram illustrating a non-limiting application of an integrated isolator system according to some embodiments in a portable electronic device setup. The integrated isolator system 1000 can be used in a portable electronic device 1001 to transmit power through an isolation barrier at high operating frequencies with high transmission efficiency and high isolation ratings. The portable electronic device 1001 can be a smartphone, personal digital assistant (PDA), tablet computer, or other portable device. Other such devices can use an integrated isolator system of the type described herein.

[0083] Although Figure 10 An example of a portable electronic device 1001 incorporating aspects of this application is shown, but other uses are possible. For example, one or more integrated isolator systems 1000 can be used in automobiles or medical devices. Various embodiments of this application can be implemented to provide high transmission efficiency and high isolation levels at high operating frequencies.

[0084] Various embodiments have been described to provide isolators with insulating materials that can have different dielectric constant values. The specific dielectric constant of the material is not limiting, as various materials with relatively high and low dielectric constants can be used. However, non-limiting examples are now provided. Non-limiting examples of high dielectric constant dielectric materials that can be used around the arc in the induction circuit, such as insulating layers 724 and 730, include silicon nitride (SiN), aluminum oxide (Al2O3), tantalum pentoxide (Ta2O5), strontium titanate (SrTiO3), bismuth ferrite (BiFeO3), silicon dioxide (SiO2), and barium strontium titanate (BST).

[0085] Non-limiting examples of low dielectric constant dielectric materials that can be used in the embodiments of the dielectric regions described herein, such as low dielectric constant dielectric regions 726 and 728, include polyimide.

[0086] In embodiments of the integrated isolator device described herein, examples of conductive materials that can be used to form isolator components (e.g., inductor circuits, capacitors, traces) include gold and copper, or any other suitable conductive material.

[0087] Examples of substrate materials that can be used in the embodiments of the integrated isolator device described herein, such as substrates 204 and 720, include silicon, quartz, and laminated materials. In some embodiments, the substrate of the integrated isolator device may be an insulating substrate.

[0088] The integrated isolator devices described herein can be used in a variety of applications (e.g., industrial, medical, consumer). For example, data transmission and / or power transfer between electrically isolated systems can be achieved using the integrated isolator devices described herein. As an example, medical devices in a room where a medical procedure is being performed can be electrically isolated from a control system in a control room. For example, a medical imaging device and / or monitor in a room where surgery is being performed can be isolated from the system controlling the operation of the imaging device and / or monitor. The isolator can be any type of integrated isolator device and / or system described herein, and the isolated signal path can be analog or digital.

[0089] As another example, industrial equipment can be isolated from the control system of the control equipment. For instance, a high-wattage motor can be isolated from the control system that controls its operation via an integrated isolator device of the type described herein. The control system can operate at a lower wattage than the high-wattage motor used in the industrial equipment. The isolator can be mounted on a circuit board that includes various circuit components connected to the motor and / or control equipment.

[0090] Other uses of the integrated isolator device described herein are also possible, as the examples described are non-limiting.

[0091] The terms "approximately" and "about" can be used to indicate within ±20% of the target value in some embodiments, within ±10% of the target value in some embodiments, within ±5% of the target value in some embodiments, but within ±2% of the target value in some embodiments. The terms "approximately" and "about" may include the target value.

Claims

1. An integrated isolator device, comprising: substrate; Insulating layer on the substrate; The first pair of conductive plates includes a first conductive plate and a second conductive plate separated from each other by the insulating layer; and The second pair of conductive plates includes a third conductive plate and a fourth conductive plate separated from each other by the insulating layer. The first pair of traces includes a first trace extending from the first conductive plate and a second trace extending from the third conductive plate. The second pair of traces includes a third trace extending from the second conductive plate and a fourth trace extending from the fourth conductive plate. The first pair of traces and the second pair of traces are shaped and sized to provide capacitance and inductance, such that a first isolator component including the first conductive plate, the third conductive plate, and the first pair of traces resonates with a second isolator component including the second conductive plate, the fourth conductive plate, and the second pair of traces. The first conductive plate and the third conductive plate are located in a first metallization layer and are separated from each other by a first gap with a size between 10 K and 80 K, so that the integrated isolator device can operate at frequencies between 20 GHz and 200 GHz.

2. The integrated isolator device according to claim 1, wherein: The second conductive plate and the fourth conductive plate are located in a second metallization layer separated from the first metallization layer by the insulating layer, and The second conductive plate and the fourth conductive plate are separated from each other by a first gap with a size between 10 K and 80 K.

3. The integrated isolator device according to claim 1, wherein the first pair of traces and the second pair of traces are rotationally symmetric.

4. The integrated isolator device according to claim 1, wherein the length of the first conductive plate is between 200 Å and 800 Å, and the width is such that the ratio of the length to the width of the conductive plate is between 1.5 and 3.

5.

5. The integrated isolator device according to claim 4, wherein: The first and second traces in the first pair of traces are separated from each other by a second gap, the size of which is set to be smaller than the first gap between the first conductive plate and the third conductive plate.

6. The integrated isolator device according to claim 1, wherein the dimensions of the first pair of conductive plates and the second pair of conductive plates are set such that the integrated isolator device has a characteristic impedance between 50 ohms and 150 ohms.

7. The integrated isolator device of claim 1, wherein the insulating layer comprises a first insulating layer of a first material and a second insulating layer of a second material stacked on top of the first insulating layer, the second material being different from the first material.

8. The integrated isolator device according to claim 1, wherein the thickness of the insulating layer is between 20µm and 150µm.

9. The integrated isolator device according to claim 1, wherein the width and length of the first conductive plate are configured to have a width of 0.005 mm. 2 and 0.05 mm 2 The product of the values ​​between them.

10. An integrated isolator device, comprising: substrate; Insulating layer on the substrate; The first pair of conductive plates includes a first conductive plate and a second conductive plate separated from each other by the insulating layer; The second pair of conductive plates includes a third conductive plate and a fourth conductive plate separated from each other by the insulating layer; The third pair of conductive plates includes a fifth conductive plate and a sixth conductive plate separated from each other by the insulating layer; The fourth pair of conductive plates includes a seventh conductive plate and an eighth conductive plate that are separated from each other by the insulating layer; A first trace extends between the first conductive plate and the fifth conductive plate and electrically couples the first conductive plate and the fifth conductive plate; and A second trace extends between the third conductive plate and the seventh conductive plate and electrically couples the third conductive plate and the seventh conductive plate, wherein: The first conductive plate and the third conductive plate are located in the first metallization layer and are separated from each other by a first gap having a first value. The first trace and the second trace are separated from each other by a second gap having a second value. The second value is less than the first value. The second conductive plate and the fourth conductive plate are configured to receive input signals, and The sixth conductive plate and the eighth conductive plate are configured to provide an output signal.

11. The integrated isolator device according to claim 10, wherein: The fifth conductive plate and the seventh conductive plate are located in the first metallization layer, and The second conductive plate, the fourth conductive plate, the sixth conductive plate, and the eighth conductive plate are located in a second metallization layer that is separated from the first metallization layer by the insulating layer.

12. The integrated isolator device according to claim 10, comprising: The first pair of traces includes a third trace extending from the second conductive plate and a fourth trace extending from the fourth conductive plate, wherein the third trace and the fourth trace are separated by a third gap having a second value.

13. The integrated isolator device according to claim 12, comprising: The second pair of traces includes a fifth trace extending from the sixth conductive plate and a sixth trace extending from the eighth conductive plate. The first pair of traces and the second pair of traces are rotationally symmetric.

14. The integrated isolator device of claim 10, wherein the first trace and the second trace are symmetrical.

15. The integrated isolator device of claim 10, wherein the length of the first conductive plate is between 200µm and 800µm.

16. A system comprising: Integrated isolator device, comprising: Insulation layer, The first pair of conductive plates includes a first conductive plate and a second conductive plate separated from each other by the insulating layer, and The second pair of conductive plates includes a third conductive plate and a fourth conductive plate separated from each other by the insulating layer; The transmitter, coupled to a first isolator component including the first conductive plate and the third conductive plate, is configured to operate in a first voltage domain; and The receiver is coupled to a second isolator component comprising the second conductive plate and the fourth conductive plate, and is configured to operate in a second voltage domain different from the first voltage domain. The first conductive plate and the third conductive plate are located in the first metallization layer and are separated from each other by a first gap with a size between 10 K and 80 K. The integrated isolator device further includes: The first pair of traces includes a first trace extending from the first conductive plate and a second trace extending from the third conductive plate. The second pair of traces includes a third trace extending from the second conductive plate and a fourth trace extending from the fourth conductive plate. The first pair of traces and the second pair of traces are shaped and sized to provide capacitance and inductance, such that a first isolator component including the first conductive plate, the third conductive plate and the first pair of traces resonates with a second isolator component including the second conductive plate, the fourth conductive plate and the second pair of traces.

17. The system of claim 16, wherein the voltage difference between the first voltage domain and the second voltage domain is between 100V and 2kV.

18. The system of claim 16, comprising: A substrate, wherein the integrated isolator device, transmitter, and receiver are located on the substrate and coupled through one or more redistribution layers.

19. The system of claim 16, comprising: The printed circuit board includes a first metallization layer and a second metallization layer. The second pair of conductive plates of the integrated isolator device are located in the second metallization layer of the printed circuit board.

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