Production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target

By introducing low-temperature crushing, vacuum casting, forging, solid solution, cold rolling, aging and turning steps in the preparation process of copper alloy backplate, the problems of insufficient strength and conductivity of existing copper alloy backplate are solved, and the preparation of copper alloy backplate with high strength, high conductivity and high pass rate is achieved, supporting efficient mass production during magnetron sputtering.

CN116555602BActive Publication Date: 2025-06-13SIRUI ADVANCED COPPER ALLOY TECH (FUFENG) CO LTD
View PDF 3 Cites 0 Cited by

Patent Information

Application Number
CN202310379307.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-04-11
Publication Date
2025-06-13
Estimated Expiration
2043-04-11

AI Technical Summary

Technical Problem

The strength and conductivity of the existing copper alloy back plates are insufficient, which leads to the inability to meet the requirements of high vacuum, magnetic field and electric field during magnetron sputtering. The preparation process cannot uniformly destroy grains and precisely control heat treatment, resulting in low product qualification rate, low material utilization rate and high production cost.

Method used

A process including low-temperature crushing, vacuum casting, forging, solid solution, cold rolling, aging and turning is used to prepare high-strength, high-conductive copper alloy back plates. This process ensures high conductivity and strength of copper alloys by fine control of each process step, and improves material utilization and finished product qualification.

Benefits of technology

The high strength and high conductivity of the copper alloy backplate are achieved, the problems of uneven grain size and inaccurate heat treatment are solved, the final product pass rate is improved to 98%, the material utilization rate is 60.11%-%60.09%, and the production cost is reduced and mass production is supported.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN116555602B_ABST
    Figure CN116555602B_ABST
Patent Text Reader

Abstract

The invention discloses a production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target, belonging to the technical field of copper alloy preparation, including S1. Raw material selection: using copper alloy as the raw material; S2. Vacuum melting and casting: performing vacuum melting; S3. Forging: kneading and beating three sides of the length, width and height of a cube ingot and finally kneading and beating it into a circular sheet; S4. Solution treatment: performing solution treatment through water cooling; S5. Cold rolling: putting the solution-treated sheet into a roller-type cold rolling mill for all-direction cold rolling treatment; S6. Aging: putting the cold-rolled circular sheet obtained in step S6 into a furnace at room temperature for aging treatment; S7. Turning: performing turning treatment on the sheet after aging treatment obtained in step S6. The copper backplane prepared by the invention has a simple process, low production cost, high qualification rate, small and uniformly distributed crystal grains of the backplane, high and uniformly distributed hardness, no interlayers inside, and no defects such as slag inclusion at the edge position of the sheet.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present invention relates to the technical field of copper alloy preparation, and particularly to a production process of a high-strength and high-conductivity copper alloy backplane for a vacuum sputtering target. Background Art

[0002] In magnetron sputtering, electrons collide with argon atoms during the process of accelerating towards the substrate under the action of an electric field, ionizing a large number of argon atoms and electrons. The electrons fly towards the substrate, and the argon ions are accelerated under the action of the electric field to bombard the target on the target component on the sputtering substrate, sputtering out a large number of target atoms. The neutral target atoms are deposited on the substrate to form a film, and finally the purpose of coating the surface of the substrate is achieved. The target is composed of a target blank that meets the sputtering performance and a backplane welded to the target blank. The backplane plays a supporting role in the target and has the function of conducting heat. In the magnetron sputtering process of large-scale integrated circuits, copper materials with high strength, good heat conduction and high conductivity are required as the backplane materials. Installed on the sputtering machine table, the target can be effectively sputtered under the action of high vacuum, magnetic field and electric field. In the prior art, the alloys produced have low strength and insufficient hardness to meet the requirements of the backplane materials. Therefore, there is an urgent need for a manufacturing method to make the hardness of the produced alloy materials meet the requirements.

[0003] In the currently popular copper backplane production process, the grains cannot be uniformly damaged and the temperature cannot be accurately controlled. Therefore, the minimum grain size of the prepared copper backplane is 36um and the maximum is uncertain. The hardness is 142HV - 158HV, the hardness value is low and unevenly distributed, the conductivity is 40%IACS - 43%IACS, the overall qualification rate of the backplane is less than 10%, the material utilization rate is 48.63% - 54.46%, the qualification rate of the finished product is low, the production cost is high, and mass production cannot be achieved. In view of the deficiencies of the prior art, the present invention provides a copper backplane preparation method with a finished product qualification rate of 98%, a material utilization rate of 60.11% - 60.09%, which can uniformly damage grains, accurately control the heat treatment process and can achieve mass production. Summary of the Invention

[0004] To solve the above technical problems, the present invention provides a production process of a high-strength and high-conductivity copper alloy backplane for a vacuum sputtering target, including the following steps:

[0005] S1. Raw material selection and preparation:

[0006] Select a copper alloy and perform low-temperature crushing on the selected copper alloy. The temperature of the low-temperature crushing is -30 to -40°C. After crushing, a copper alloy block is obtained, and the particle size of the crushed copper alloy block is 2 - 3 cm;

[0007] S2. Vacuum melting and casting:

[0008] Put the copper alloy block obtained in step S1 into a crucible, place the crucible in a vacuum furnace, evacuate the vacuum degree of the vacuum furnace to р ≤ 10 Pa, heat up the vacuum furnace. After the raw materials in the crucible are completely melted, adjust the power of the vacuum furnace to 100 ± 5 KW, open the argon filling valve to fill high-purity argon into the vacuum furnace. When the pressure in the vacuum furnace rises to -0.08 Mpa, close the argon filling valve, raise the power of the vacuum furnace to 750 ± 5 KW, add the refining agent, refine for 60 min, remove gas and skim the slag, then adjust the power of the vacuum furnace to 300 ± 5 KW, and cast the melt into a cube ingot; the refining agent is composed of the following components by weight: 25 - 40 parts of calcium fluoride, 15 - 30 parts of potassium fluotitanate, 3 - 8 parts of titanium dioxide, 10 - 30 parts of rare earth, and the mass ratio of the refining agent to the melt is 1:138;

[0009] S3. Forging:

[0010] Load the cube ingot obtained in step S2 into the furnace, the loading temperature > 750 °C, the holding temperature is 900 °C - 960 °C, hold for 2.0 h - 2.5 h and then take it out, knead the three sides of the length, width and height of the cube ingot, and finally knead it into a circular plate;

[0011] S4. Solution treatment:

[0012] Load the plate obtained in step S3 into the furnace at room temperature, heat it from room temperature to 850 °C - 900 °C and hold for 60 min - 90 min within 30 min - 50 min after entering the furnace. After the holding is completed, put it into circulating cold water for cooling within 30 s - 50 s, and take it out after cooling to below 85 °C;

[0013] S5. Cold rolling:

[0014] Put the solution-treated plate into a roller-type cold rolling mill for all-direction cold rolling treatment to obtain a cold-rolled circular plate;

[0015] S6. Aging:

[0016] Load the cold-rolled circular plate obtained in step S6 into the furnace at room temperature, raise the furnace temperature to 475 °C - 485 °C within 30 min - 40 min and hold for 270 min. After the holding is completed, cool it with the furnace to obtain the plate after aging treatment;

[0017] S7. Turning:

[0018] Perform turning treatment on the plate after aging treatment obtained in step S6 to obtain the back plate for vacuum sputtering target.

[0019] Further, the copper alloy selected in step S1 is composed of the following components by mass percentage: nickel content is 1.5%-4.0%, chromium content is 0.1%-0.8%, silicon content is 0.1%-0.8%, iron element is 0.02%-0.10%, the total impurity content <0.1%, and the balance is copper.

[0020] Note: The impurities of the selected copper alloy are low, and the conductivity of the prepared copper alloy backplane is high.

[0021] Further, the speed at which argon is filled into the vacuum furnace in step S2 is 1-2m 3 / min, and the purity of the argon ≥99%.

[0022] Note: High-purity argon is not likely to cause copper oxidation.

[0023] Further, the process of heating up the vacuum furnace in step S2 is as follows: first raise the power of the vacuum furnace to 150±5KW, keep it warm for 30min, then raise the power to 300±5KW, keep it warm for 30min, then raise the power to 500±5KW and maintain it for 30min, and then raise the power to 700±5KW, keep it warm for 30min.

[0024] Note: This heating method can enhance the hardness of the prepared backplane.

[0025] Further, when kneading and beating the cube ingot in step S3, the starting forging temperature >870°C, and the final forging temperature >650°C.

[0026] Note: When the starting forging temperature >870°C and the final forging temperature >650°C, if the final forging temperature is too low, the hardness distribution of the prepared backplane will be uneven.

[0027] Further, the single kneading and beating deformation amount in step S3 is 40%-45%.

[0028] Note: This forging method solves the defects such as uneven grain size distribution, uneven hardness, internal interlayers, and slag inclusion at the edge position that occur in the conventional three-heading and three-drawing forging process with a single deformation amount of 20%-30%.

[0029] Further, the single cold rolling deformation amount in step S5 is 5%-8%, and the total deformation amount is 50.0%-58.8%.

[0030] Note: It can effectively prevent the problems of uneven destruction of grain size and uneven hardness distribution.

[0031] Further, the copper alloy described in step S1 can be replaced by composite metal powder, which is composed of the following components by mass percentage: nickel powder 1.5%-4.0%, chromium powder 0.1%-0.8%, silicon powder 0.1%-0.8%, iron powder 0.02%-0.10%, and the balance is copper powder. The particle sizes of the nickel powder, chromium powder, silicon powder, iron powder, and copper powder are ≤40 μm, and the purity of each metal powder is ≥99%.

[0032] Note: The effect of using metal powder to replace the backplane prepared in step S1 is the same as that of using copper alloy to prepare the backplane.

[0033] Further, the turning in step S7 is carried out by precision turning, and the turning speed is 1000-1200 r / min.

[0034] Note: The faster the turning speed, the lower the surface roughness of the backplane, and the smoother the surface of the backplane.

[0035] Further, the surface of the vacuum sputtering target obtained after step S7 is treated. First, it is polished with sandpaper with a mesh number of 400, then polished with 800-mesh sandpaper, and finally polished with 1000-mesh sandpaper. After polishing, it is polished with a polishing cloth again, and the surface roughness after polishing is Ra≤0.16.

[0036] Note: The backplane after polishing has the best effect in actual application, stronger wear resistance, enhanced stability in cooperation with other parts, and enhanced fatigue strength of the backplane.

[0037] The beneficial effects of the present invention are as follows:

[0038] (1) In view of a series of adverse effects caused by the three-pier three-drawing forging method, the present invention designs a method of making a cube billet, kneading and beating on three sides of length, width and height, with a single kneading and beating deformation amount of about 40%-45% for forging and finally forming a circular plate with a certain thickness, which solves the problems of uneven grain size distribution, internal interlayers, and slag inclusions at the edge positions.

[0039] (2) In view of the problem that it is difficult to accurately control the solution temperature in the solution treatment with the residual heat of hot rolling, the present invention formulates a separate solution treatment process, deletes the hot rolling step to reduce the production cost, accurately controls the solution temperature and quantifies the process steps, which plays a decisive role in batch production.

[0040] (3) In view of the problem that the position and weight of each hammer strike in the cold forging process are uneven, which will cause uneven grain damage degree and hardness distribution, the present invention proposes an all-round cold rolling process with a single deformation amount of 5%-8%, which solves the problems of uneven grain size damage and uneven hardness distribution.

[0041] (4) In view of the problems that the solution treatment at residual temperature in the conventional production process affects the unfixed aging temperature, and the conductivity and hardness after aging are unstable and insufficient, a stable and effective aging treatment process has been obtained through quantifying the process temperature and a large number of experiments.

[0042] (5) In the forging process of the present invention, a circular blank is directly formed, and subsequent processing is still carried out with the circular blank. Since there are no edge square corners, water cutting is cancelled, which improves the material utilization rate and reduces the production cost. Brief Description of the Drawings

[0043] Figure 1 is the preparation flow chart of the present invention.

[0044] Figure 2 is the metallographic structure comparison diagram of the backplane prepared by the conventional process and the backplane prepared by the present invention under 100 μm.

[0045] Figure 3 is the metallographic structure comparison diagram of the backplane prepared by the conventional process and the backplane prepared by the present invention under 10 μm. Detailed Description of the Invention

[0046] Example 1:

[0047] As Figure 1 shown, a production process of a high-strength and high-conductivity copper alloy backplane for a vacuum sputtering target includes the following steps:

[0048] S1. Raw material selection and preparation:

[0049] Select a copper alloy, and perform low-temperature crushing on the selected copper alloy. The temperature of the low-temperature crushing is -30°C. After crushing, copper alloy blocks are obtained. The particle size of the crushed copper alloy blocks is 2 - 3 cm. The selected copper alloy is composed of the following components by mass percentage: nickel content is 1.5%, chromium content is 0.1%, silicon content is 0.1%, iron element is 0.02, the total impurity content is 0.08%, and the balance is copper. The impurities of the selected copper alloy are low, and the conductivity of the prepared copper alloy backplane is high;

[0050] S2. Vacuum melting and casting:

[0051] Put the copper alloy blocks obtained in step S1 into a crucible, and place the crucible in a vacuum melting furnace. When the vacuum degree of the vacuum melting furnace is pumped to р = 9 Pa, heat up the vacuum melting furnace. First, raise the power of the vacuum melting furnace to 145 KW, keep it warm for 30 min, then raise the power to 295 KW, keep it warm for 30 min, then raise the power to 495 KW and keep it for 30 min, and then raise the power to 695 KW, keep it warm for 30 min. This heating method can enhance the hardness of the prepared backplane. After the raw materials in the crucible are completely melted, adjust the power of the vacuum melting furnace to 95 KW, and open the argon gas filling valve to fill high-purity argon into the vacuum melting furnace. The speed of argon gas filling into the vacuum melting furnace is 1 m3 / min. The purity of argon is 99.2%. High-purity argon is not likely to cause copper oxidation. When the pressure in the vacuum melting furnace rises to -0.08 Mpa, close the argon filling valve, raise the power of the vacuum melting furnace to 745 KW, add the refining agent, and refine for 60 min. After degassing and slag skimming, reduce the power of the vacuum melting furnace to 295 KW, and cast the melt into a cube ingot. The refining agent is composed of the following components by weight: 25 parts of calcium fluoride, 15 parts of potassium fluotitanate, 3 parts of titanium dioxide, and 10 parts of rare earth. The mass ratio of the refining agent to the melt is 1:138;

[0052] S3. Forging:

[0053] Load the cube ingot obtained in step S2 into the furnace. The loading temperature is 755 °C, the holding temperature is 900 °C, and take it out after holding for 2.0 h. Knead and beat the three sides of the length, width, and height of the cube ingot. The single kneading and beating deformation amount is 40%. This forging method solves the defects such as uneven grain size distribution, uneven hardness, internal interlayers, and slag inclusion at the edge position that occur in the conventional three-upsetting and three-drawing forging process with a single deformation amount of 20%-30%. The initial forging temperature is 880 °C, and the final forging temperature is 700 °C. If the final forging temperature is too low, the hardness distribution of the prepared backplane is also uneven. Finally, knead and beat it into a circular plate;

[0054] S4. Solution treatment:

[0055] Load the plate obtained in step S3 into the furnace at room temperature. Heat it from room temperature to 850 °C and hold for 60 min within 30 min after loading. After the holding is completed, put it into circulating cold water for cooling within 30 s, and take it out after cooling below 85 °C;

[0056] S5. Cold rolling:

[0057] Put the solution-treated plate into a roller-type cold rolling mill for all-direction cold rolling treatment. The single cold rolling deformation amount is 5%, and the total deformation amount is 50.0%. It can effectively prevent uneven grain size damage and uneven hardness distribution problems, and obtain a cold-rolled circular plate;

[0058] S6. Aging:

[0059] Load the cold-rolled circular plate obtained in step S6 into the furnace at room temperature. Raise the furnace temperature to 475 °C and hold for 270 min within 30 min after loading. After the holding is completed, cool it with the furnace to obtain the aged plate;

[0060] S7. Turning:

[0061] Perform turning treatment on the aged plate obtained in step S6. The turning is carried out by precision turning. The turning speed is 1000 r / min. The turning speed is fast, the surface roughness of the backplane is low, and the smoother the surface of the backplane, to obtain the backplane for vacuum sputtering target.

[0062] Example 2:

[0063] As Figure 1 shown, a production process of a high-strength and high-conductivity copper alloy backplane for a vacuum sputtering target includes the following steps:

[0064] S1. Raw material selection and preparation:

[0065] Select a copper alloy and perform low-temperature crushing on the selected copper alloy. The temperature of the low-temperature crushing is -35°C. After the crushing is completed, copper alloy blocks are obtained. The particle size of the copper alloy blocks after crushing is 2 - 3 cm. The selected copper alloy is composed of the following components by mass percentage: nickel content is 2.0%, chromium content is 0.5%, silicon content is 0.5%, iron element is 0.08%, the total impurity content is 0.05%, and the balance is copper. The impurities of the selected copper alloy are low, and the conductivity of the prepared copper alloy backplane is high;

[0066] S2. Vacuum melting and casting:

[0067] Put the copper alloy blocks obtained in step S1 into a crucible, and place the crucible in a vacuum melting furnace. When the vacuum degree of the vacuum melting furnace is pumped to р = 5 Pa, heat up the vacuum melting furnace. First, raise the power of the vacuum melting furnace to 150 KW, keep it warm for 30 min, then raise the power to 300 KW, keep it warm for 30 min, then raise the power to 500 KW and keep it for 30 min, and then raise the power to 700 KW and keep it warm for 30 min. This heating method can enhance the hardness of the prepared backplane. After the raw materials in the crucible are completely melted, adjust the power of the vacuum melting furnace to 100 KW, open the argon filling valve to fill high-purity argon into the vacuum melting furnace. The speed of argon filling into the vacuum melting furnace is 1.5 m 3 / min, and the purity of argon is 99.5%. The high purity of argon is not easy to cause copper oxidation. When the pressure in the vacuum melting furnace rises to -0.08 Mpa, close the argon filling valve, raise the power of the vacuum melting furnace to 750 KW, add a refining agent, and refine for 60 min. After degassing and slag skimming, adjust the power of the vacuum melting furnace to 300 KW, and pour the melt into a cube ingot. The refining agent is composed of the following components by weight: 28 parts of calcium fluoride, 25 parts of potassium fluotitanate, 5 parts of titanium dioxide, and 20 parts of rare earth. The mass ratio of the refining agent to the melt is 1:138;

[0068] S3. Forging:

[0069] Load the cube ingot obtained in step S2 into the furnace. The furnace loading temperature is 820 °C, the holding temperature is 940 °C, hold for 2.5 h and then take out. Knead and beat the three sides of length, width and height of the cube ingot. The single kneading and beating deformation amount is 43%. This forging method solves the defects such as uneven grain size distribution, uneven hardness, internal interlayers, and slag inclusion at the edge position in the conventional three-upsetting and three-drawing forging process with a single deformation amount of 20%-30%. The initial forging temperature is 900 °C, the final forging temperature is 655 °C. The too low final forging temperature results in uneven hardness distribution of the prepared backplane. Finally, knead and beat it into a circular sheet;

[0070] S4, Solution treatment:

[0071] Load the sheet obtained in step S3 into the furnace at room temperature. Heat up from room temperature to 880 °C and hold for 80 min within 40 min after charging into the furnace. After the holding is completed, put it into circulating cold water for cooling within 40 s, and take it out after cooling below 85 °C;

[0072] S5, Cold rolling:

[0073] Put the solution-treated sheet into a roller-type cold rolling mill for all-direction cold rolling treatment. The single cold rolling deformation amount is 7%, and the total deformation amount is 56%. It can effectively prevent uneven grain size damage and uneven hardness distribution problems, and obtain a cold-rolled circular sheet;

[0074] S6, Aging:

[0075] Load the cold-rolled circular sheet obtained in step S6 into the furnace at room temperature. Raise the furnace temperature to 480 °C within 35 min and hold for 270 min. After the holding is completed, cool it with the furnace to obtain the sheet after aging treatment;

[0076] S7, Turning:

[0077] Perform turning treatment on the sheet after aging treatment obtained in step S6. The turning is carried out by precision turning. The turning speed is 1100 r / min. The turning speed is fast, the surface roughness of the backplane is low, and the surface of the backplane is smoother, obtaining the backplane for vacuum sputtering target.

[0078] Example 3:

[0079] A production process of a high-strength and high-conductivity copper alloy backplane for vacuum sputtering target, comprising the following steps:

[0080] S1, Raw material selection and preparation:

[0081] Select a copper alloy and perform cryogenic crushing on the selected copper alloy at a temperature of -40°C. After the cryogenic crushing is completed, copper alloy blocks are obtained. The particle size of the copper alloy blocks after crushing is 2 - 3 cm. The selected copper alloy is composed of the following components by mass percentage: nickel content is 4.0%, chromium content is 0.8%, silicon content is 0.8%, iron element is 0.10%, the total impurity content is 0.09%, and the balance is copper. The impurities of the selected copper alloy are low, and the conductivity of the prepared copper alloy backplane is high.

[0082] S2. Vacuum melting and casting:

[0083] Put the copper alloy blocks obtained in step S1 into a crucible, and place the crucible in a vacuum furnace. When the vacuum degree of the vacuum furnace is pumped to р = 8 Pa, heat up the vacuum furnace. First, raise the power of the vacuum furnace to 155 KW, keep it warm for 30 min, then raise the power to 305 KW, keep it warm for 30 min, then raise the power to 505 KW and keep it for 30 min, and then raise the power to 705 KW and keep it warm for 30 min. This heating method can enhance the hardness of the prepared backplane. After the raw materials in the crucible are completely melted, adjust the power of the vacuum furnace to 105 KW, open the argon filling valve to fill high-purity argon into the vacuum furnace. The filling speed of argon into the vacuum furnace is 2 m 3 / min, and the purity of argon is 99.5%. High-purity argon is not easy to cause copper oxidation. When the pressure in the vacuum furnace rises to -0.08 Mpa, close the argon filling valve, raise the power of the vacuum furnace to 755 KW, add a refining agent, and refine for 60 min. After degassing and slag skimming, adjust the power of the vacuum furnace to 305 KW, and pour the melt into a cube ingot. The refining agent is composed of the following components by weight: 40 parts of calcium fluoride, 30 parts of potassium fluotitanate, 8 parts of titanium dioxide, and 30 parts of rare earth. The mass ratio of the refining agent to the melt is 1:138.

[0084] S3. Forging:

[0085] Load the cube ingot obtained in step S2 into the furnace. The loading temperature is 850°C, and the holding temperature is 960°C. Take it out after holding for 2.5 h, and knead the three sides of the length, width, and height of the cube ingot. The single kneading deformation amount is 45%. This forging method solves the defects such as uneven grain size distribution, uneven hardness, internal interlayers, and slag inclusion at the edge position that occur in the conventional forging process of three upsetting and three drawing with a single deformation amount of 30%. The initial forging temperature is 900°C, and the final forging temperature is 700°C. If the final forging temperature is too low, the hardness distribution of the prepared backplane will also be uneven. Finally, knead it into a circular plate.

[0086] S4. Solution treatment:

[0087] Load the sheet metal obtained in step S3 into the furnace at room temperature. Heat it from room temperature to 900 °C within 50 min after loading into the furnace and hold for 90 min. After the holding is completed, immerse it in circulating cold water for cooling within 50 s, and take it out after cooling to below 85 °C;

[0088] S5. Cold rolling:

[0089] Put the solution-treated sheet metal into a roller-type cold rolling mill for all-direction cold rolling treatment. The single-pass cold rolling deformation is 8%, and the total deformation is 58.8%. This can effectively prevent uneven grain size destruction and uneven hardness distribution problems, and obtain a cold-rolled circular sheet metal;

[0090] S6. Aging:

[0091] Load the cold-rolled circular sheet metal obtained in step S6 into the furnace at room temperature. Raise the furnace temperature to 485 °C within 40 min and hold for 270 min. After the holding is completed, cool it with the furnace to obtain the sheet metal after aging treatment;

[0092] S7. Turning:

[0093] Perform turning treatment on the sheet metal after aging treatment obtained in step S6. The turning is carried out by precision turning. The turning speed is 1200 r / min. The turning speed is fast, the surface roughness of the backplane is low, and the surface of the backplane is smoother, obtaining a backplane for a vacuum sputtering target.

[0094] Detect the grain size, conductivity, and hardness of the backplanes prepared in Examples 1 - 3. The results are shown in Table 1. By comparing the grain size, conductivity, and hardness of the backplanes prepared in Comparative Examples 1 - 3, it is found that the hardness, conductivity, and grain size of Example 3 are the best. Therefore, Example 3 is the best example.

[0095] Table 1: Detection results of the backplanes prepared in Examples 1 - 3.

[0096]

[0097]

[0098] Example 4:

[0099] On the basis of Example 3, in Example 4, the copper alloy in step S1 is replaced with a composite metal powder. The composite metal powder is composed of the following components by mass percentage: nickel powder 1.5%, chromium powder 0.1%, silicon powder 0.1%, iron powder 0.02%, and the balance is copper powder. The particle sizes of nickel powder, chromium powder, silicon powder, iron powder, and copper powder are all ≤ 40 μm, and the purity of each metal powder is ≥ 99%; Using metal powder to replace the backplane prepared in step S1 has the same effect as the backplane prepared using copper alloy.

[0100] Example 5:

[0101] Based on Example 3, in Example 4, the copper alloy in step S1 is replaced with a composite metal powder, and the composite metal powder is composed of the following components by mass percentage: nickel powder 2.0%, chromium powder 0.5%, silicon powder 0.05%, iron powder 0.08%, and the balance is copper powder. The particle sizes of nickel powder, chromium powder, silicon powder, iron powder, and copper powder are ≤ 40 μm, and the purity of each metal powder is ≥ 99%; the effect of using the metal powder to replace the backplane prepared in step S1 is the same as that of the backplane prepared using the copper alloy.

[0102] Example 6:

[0103] Based on Example 3, in Example 4, the copper alloy in step S1 is replaced with a composite metal powder, and the composite metal powder is composed of the following components by mass percentage: nickel powder 4.0%, chromium powder 0.8%, silicon powder 0.8%, iron powder 0.10%, and the balance is copper powder. The particle sizes of nickel powder, chromium powder, silicon powder, iron powder, and copper powder are ≤ 40 μm, and the purity of each metal powder is ≥ 99%; the effect of using the metal powder to replace the backplane prepared in step S1 is the same as that of the backplane prepared using the copper alloy.

[0104] Comparing Example 4 - Example 6, the hardness, electrical conductivity, and grain size of Example 6 are the best. Therefore, Example 3 is the best example.

[0105] Example 7:

[0106] Based on Example 3, in Example 7, the surface of the vacuum sputtering target after step S7 is treated. First, it is polished with sandpaper of 400 mesh once, then polished with 800 - mesh sandpaper once, and finally polished with 1000 - mesh sandpaper once. After polishing, it is polished with a polishing cloth again, and the surface roughness after polishing is Ra = 0.1.

[0107] Note: The backplane after polishing has the best effect in actual application, stronger wear resistance, enhanced stability in cooperation with other parts, and enhanced fatigue strength of the backplane.

[0108] As Figure 2 shown, Figure 2 in Figure a is the metallographic structure diagram of the backplane prepared by the conventional process at 100 μm, Figure 2 in Figure b is the metallographic structure diagram of the backplane prepared by the process of the present invention at 100 μm. As Figure 3 shown, Figure 3 in Figure c is the metallographic structure diagram of the conventional process at 10 μm, Figure 3 in Figure d is the metallographic structure diagram of the backplane prepared by the process of the present invention at 10 μm. Through the comparison between Figure 2 Figure a and Figure b, it can be found that the surface structure of the backplane prepared by the present invention is more uniform. ThroughFigure 3 By comparing Figure c and Figure d, it can be found that the backplane prepared by the present invention has small crystal grain size and no interlayer inside.

Claims

1. A production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target, characterized in that, it includes the following steps: S1. Raw material selection and preparation: Select a copper alloy and perform cryogenic crushing on the selected copper alloy. The temperature of cryogenic crushing is -30 to -40 °C. After crushing, copper alloy blocks are obtained. The particle size of the crushed copper alloy blocks is 2 - 3 cm; S2. Vacuum melting and casting: Put the copper alloy blocks obtained in step S1 into a crucible, and place the crucible in a vacuum furnace. When the vacuum degree of the vacuum furnace is pumped to р ≤ 10 Pa, heat up the vacuum furnace. After the raw materials in the crucible are completely melted, adjust the power of the vacuum furnace to 100 ± 5 KW. Open the argon filling valve to fill high-purity argon into the vacuum furnace. When the pressure in the vacuum furnace rises to -0.08 Mpa, close the argon filling valve. Raise the power of the vacuum furnace to 750 ± 5 KW, add a refining agent, and refine for 60 min. After degassing and skimming the slag, adjust the power of the vacuum furnace to 300 ± 5 KW, and cast the melt into a cube ingot; The refining agent is composed of the following components by weight: 25 - 40 parts of calcium fluoride, 15 - 30 parts of potassium fluotitanate, 3 - 8 parts of titanium dioxide, and 10 - 30 parts of rare earth. The mass ratio of the refining agent to the melt is 1:138; S3. Forging: Load the cube ingot obtained in step S2 into the furnace. The loading temperature > 750 °C, the holding temperature is 900 °C - 960 °C, hold for 2.0 h - 2.5 h and then take it out. Knead and beat the three sides of the length, width, and height of the cube ingot, and finally knead it into a circular plate; S4. Solution treatment: Load the plate obtained in step S3 into the furnace at room temperature. Heat it up from room temperature to 850 °C - 900 °C within 30 min - 50 min and hold for 60 min - 90 min. After the holding is completed, put it into circulating cold water for cooling within 30 s - 50 s, and take it out after cooling to below 85 °C; S5. Cold rolling: Put the solution-treated plate into a roller-type cold rolling mill for all-direction cold rolling treatment to obtain a cold-rolled circular plate; S6. Aging: Load the cold-rolled circular plate obtained in step S6 into the furnace at room temperature. Raise the furnace temperature to 475 °C - 485 °C within 30 min - 40 min and hold for 270 min. After the holding is completed, cool it with the furnace to obtain an aged plate; S7. Turning: Perform turning treatment on the aged plate obtained in step S6 to obtain a backplane for a vacuum sputtering target; The copper alloy selected in step S1 is composed of the following components by mass percentage: nickel content is 1.5% - 4.0%, chromium content is 0.1% - 0.8%, silicon content is 0.1% - 0.8%, iron element is 0.02% - 0.10%, and the balance is copper; The speed of argon filling into the vacuum furnace described in step S2 is 1-2 m 3 / min, and the purity of the argon is ≥99%; The process of heating up the vacuum furnace in step S2 is as follows: First, raise the power of the vacuum furnace to 150 ± 5 KW, hold for 30 min, raise the power to 300 ± 5 KW, hold for 30 min, raise the power to 500 ± 5 KW and keep it for 30 min, raise the power to 700 ± 5 KW, and hold for 30 min.

2. The production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target according to claim 1, characterized in that, When kneading and beating the cube ingot in step S3, the starting forging temperature > 870 °C and the final forging temperature > 650 °C.

3. A production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target as described in claim 1, characterized in that the single kneading and beating deformation amount in step S3 is 40%-45%.

4. A production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target as described in claim 1, characterized in that the single cold rolling deformation amount in step S5 is 5%-8%, and the total deformation amount is 50.0%-58.8%.

5. A production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target as described in claim 1, characterized in that the copper alloy in step S1 can be replaced by composite metal powder, and the composite metal powder is composed of the following components by mass percentage: nickel powder 1.5%-4.0%, chromium powder 0.1%-0.8%, silicon powder 0.1%-0.8%, iron powder 0.02%-0.10%, and the balance is copper powder. The particle sizes of the nickel powder, chromium powder, silicon powder, iron powder, and copper powder are ≤ 40 μm, and the purity of each metal powder is ≥ 99%.

6. A production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target as described in claim 1, characterized in that the turning in step S7 is carried out by precision turning, and the turning speed is 1000-1200 r / min.

7. A production process of a high-strength and high-conductive copper alloy backplane for a vacuum sputtering target as described in claim 1, characterized in that the turning in step S7 is carried out by precision turning.

Citation Information

Patent Citations

  • High-strength nickel-chromium-silicon-copper alloy material and processing technology thereof

    CN102108459A

  • Processing method of copper alloy target material

    CN104746020A

  • Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material

    CN111321361A