Semiconductor laser element having a strain polarity topological layer

Abstract

The application relates to the technical field of semiconductor devices, in particular to a semiconductor laser element with a strain polarity topological layer. The laser element has strain polarity topological layers between the upper confining layer and the upper waveguide layer and between the lower confining layer and the lower waveguide layer; the layer is a three-dimensional high-order topological superlattice structure formed by one or more of SrZnSO, PbTiO3, Ta2PdS5, CdPS3, SrTiO3 and hBN; the strain polarity topological layer generates polarity anti-vortex and polarity topological characteristics, reduces the polarization effect of the active layer, improves the uniformity of carrier injection, enhances tunable second harmonic and nonlinear optical properties, makes the laser propagate along the direction of the active layer, prevents light leakage to the substrate, suppresses the substrate mode, improves the far-field image quality, more limits the internal light field between the upper waveguide layer and the lower waveguide layer, reduces optical loss, improves the mode gain of the laser, enhances the confinement factor and gain uniformity, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element with a strain polarity topological layer. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size.

[0003] There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated radiation of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single light-emitting diode is in mW level. 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency droop effect. 3) Light-emitting diode is a spontaneous transition radiation without external action, which is incoherent light from high energy level to low energy level. Laser is a stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The generated photon and the induced photon are homophase coherent light. 4) Different principles: light-emitting diode is a radiation recombination under the action of external voltage, in which electrons and holes jump to quantum well or p-n junction to produce light. Laser needs to meet the lasing conditions, which requires that the carrier in the active region should be inverted distribution. The stimulated radiation light oscillates back and forth in the resonant cavity, propagates in the gain medium to amplify the light, and finally outputs laser when the gain is greater than the loss and the threshold condition is met.

[0004] The nitride semiconductor laser has the following problems: 1) the internal lattice mismatch is large, the strain is large, the polarization effect is strong, the QCSE quantum limited Stark effect is strong, and the improvement of the electric excitation gain of the laser is limited; 2) the optical waveguide absorption loss is high, the intrinsic carbon impurities in the p-type semiconductor can compensate the acceptor and destroy the p-type, the ionization rate of the p-type doping is low, a large number of un-ionized Mg acceptor impurities can cause the internal optical loss to rise, and the refractive index dispersion of the laser, the limiting factor decreases with the increase of the wavelength, resulting in the decrease of the mode gain of the laser; 3) the thickness of the lower confinement layer increases, which can reduce the refractive index of the confinement layer, but the increase of the thickness of the lower confinement layer can limit the component regulation range, and problems such as cracking, bending and quality decline are prone to occur; at the same time, the light field mode leaks to the substrate to form a standing wave, which can cause the substrate mode suppression efficiency to be low and the far field image FFP quality to be poor. 4) the Mg acceptor activation energy of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, and the hole mobility is far less than the electron mobility, which can cause the electron and hole in the quantum well to be seriously asymmetric and mismatched, the electron leakage and the carrier delocalization, the hole transport in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, the laser gain spectrum is wide, and the peak gain decreases. 5) the valence band gap difference of the laser increases, the hole transport in the quantum well is more difficult, the carrier injection is uneven, and the gain is uneven. SUMMARY

[0005] One of the purposes of the present application is to provide a semiconductor laser element with a strain polarity topological layer, which generates a polarity anti-vortex and a polarity topological property, reduces the polarization effect of the active layer, improves the carrier injection uniformity, enhances the tunable second harmonic and nonlinear optical properties, makes the laser propagate along the direction of the active layer, prevents light leakage to the substrate, suppresses the substrate mode, improves the far field image quality, improves the beam quality factor, restricts more internal light field between the upper waveguide layer and the lower waveguide layer, reduces the optical loss, improves the mode gain of the laser, enhances the confinement factor and gain uniformity, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0006] To achieve the above purpose, the present application adopts the following technical scheme: a semiconductor laser element with a strain polarity topological layer, which is sequentially composed of a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer from bottom to top, a first strain polarity topological layer is arranged between the lower confinement layer and the lower waveguide layer, a second strain polarity topological layer is arranged between the upper waveguide layer and the electron blocking layer, the first strain polarity topological layer and the second strain polarity topological layer are the same or different, and both are three-dimensional high-order topological superlattice structures in SrZnSO, PbTiO3, Ta2PdS5, CdPS3, SrTiO3 and hBN.

[0007] Further improvement of semiconductor laser element with strain polarity topological layer

[0008] Preferably, the substrate is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium-aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0009] Preferably, the lower confining layer is any one or combination of two or more of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 .

[0010] Preferably, the lower waveguide layer and the upper waveguide layer are any one or combination of two or more of GaN, InGaN, AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3 .

[0011] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, with a period number of 3≥m≥1, the well layer being any one or combination of two or more of InGaN, InN, AlInN, GaN, with a thickness of 10-80 angstrom meters, and the barrier layer being any one or combination of two or more of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 10-120 angstrom meters.

[0012] Preferably, the electron blocking layer and the upper confining layer are any one or combination of two or more of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0013] Preferably, the first strain polarity topological layer and the second strain polarity topological layer each have a thickness of 5-500 nm.

[0014] Preferably, the first and second strain-polar topological layers are three-dimensional high-order topological superlattice structures formed by the following ternary combinations: SrZnSO / PbTiO3 / Ta2PdS5, SrZnSO / PbTiO3 / CdPS3, SrZnSO / PbTiO3 / SrTiO3, SrZnSO / PbTiO3 / hBN, SrZnSO / Ta2PdS5 / CdPS3, SrZnSO / Ta2PdS5 / SrTiO3, SrZnSO / Ta2PdS5 / hBN, SrZnSO / CdPS3 / SrTiO3, SrZnSO / CdPS3 / hBN, SrZnSO / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3, PbTiO3 / Ta2PdS5 / SrTiO3, PbTiO3 / Ta2PdS5 / hBN, PbTiO3 / CdPS3 / SrTiO3, PbTiO3 / CdPS3 / hBN, PbTiO3 / SrTiO3 / hBN, Ta2PdS5 / CdPS3 / SrTiO3, Ta2PdS5 / CdPS3 / hBN, Ta2PdS5 / SrTiO3 / hBN, CdPS3 / SrTiO3 / hBN.

[0015] Preferably, the first and second strain-polar topological layers are three-dimensional high-order topological superlattice structures formed by the following ternary combinations: SrZnSO / PbTiO3 / Ta2PdS5, SrZnSO / PbTiO3 / CdPS3, SrZnSO / PbTiO3 / SrTiO3, SrZnSO / PbTiO3 / hBN, SrZnSO / Ta2PdS5 / CdPS3, SrZnSO / Ta2PdS5 / SrTiO3, SrZnSO / Ta2PdS5 / hBN, SrZnSO / CdPS3 / SrTiO3, SrZnSO / CdPS3 / hBN, SrZnSO / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3, PbTiO3 / Ta2PdS5 / SrTiO3, PbTiO3 / Ta2PdS5 / hBN, PbTiO3 / CdPS3 / SrTiO3, PbTiO3 / CdPS3 / hBN, PbTiO3 / SrTiO3 / hBN, Ta2PdS5 / CdPS3 / SrTiO3, Ta2PdS5 / CdPS3 / hBN, Ta2PdS5 / SrTiO3 / hBN, CdPS3 / SrTiO3 / hBN.

[0016] Preferably, the first strain polarity topological layer and the second strain polarity topological layer are three-dimensional high-order topological superlattice structures formed by the following four combinations or five combinations or six combinations: SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3, SrZnSO / PbTiO3 / Ta2PdS5 / SrTiO3, SrZnSO / PbTiO3 / Ta2PdS5 / hBN, SrZnSO / Ta2PdS5 / CdPS3 / SrTiO3, SrZnSO / Ta2PdS5 / CdPS3 / hBN, SrZnSO / CdPS3 / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3, PbTiO3 / Ta2PdS5 / CdPS3 / hBN, PbTiO3 / CdPS3 / SrTiO3 / hBN, Ta2PdS5 / CdPS3 / SrTiO3 / hBN, SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3, SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / hBN, SrZnSO / PbTiO3 / Ta2PdS5 / SrTiO3 / hBN, SrZnSO / PbTiO3 / CdPS3 / SrTiO3 / hBN, SrZnSO / Ta2PdS5 / CdPS3 / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3 / hBN, SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3 / hBN.

[0017] The beneficial effects of the present application compared with the prior art are:

[0018] The present application provides a semiconductor laser element with a strain polarity topological layer, a first strain polarity topological layer is arranged between the lower confinement layer and the lower waveguide layer, and a second strain polarity topological layer is arranged between the upper waveguide layer and the electron blocking layer; the strain polarity topological layer generates polarity anti-vortex and polarity topological characteristics, reduces the polarization effect of the active layer, improves the carrier injection uniformity, improves the mode gain and gain uniformity of the laser, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element; the strain polarity topological layer can also enhance the tunable second harmonic and nonlinear optical properties, make the laser propagate along the direction of the active layer, prevent light leakage to the substrate, suppress the substrate mode, improve the far-field image quality, improve the beam quality factor, more restrict the internal light field between the upper waveguide layer and the lower waveguide layer, reduce optical loss, and enhance the confinement factor. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a structure schematic diagram of the semiconductor laser element with a strain polarity topological layer according to an embodiment of the present application;

[0020] 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, electron blocking layer; 106, upper confinement layer; 1071, first strain polarity topological layer; 1072, second strain polarity topological layer. DETAILED DESCRIPTION

[0021] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application is further described in detail below in combination with embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor fall within the protection scope of the present application.

[0022] Comparative Example 1

[0023] The present embodiment provides a conventional laser element, which comprises, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. Specifically:

[0024] The substrate 100 is a GaN substrate;

[0025] The lower confinement layer 101 is AlGaN, with a thickness of 100 nm and a Si doping concentration of 1E18 cm -3 ;

[0026] The lower waveguide layer 102 is GaN, with a thickness of 100 nm and a Si doping concentration of 1E18 cm -3 ;

[0027] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer with a thickness of 10 angstroms, the barrier layer is GaN with a thickness of 10 angstroms, and the period number m is 3;

[0028] The upper waveguide layer 104 is InGaN, with a thickness of 100 nm and a Si doping concentration of 1E18 cm -3 ;

[0029] The electron blocking layer 105 is AlGaN, with a thickness of 100 nm and a Mg doping concentration of 1E19 cm -3 .

[0030] The upper confinement layer 106 is AlInGaN, with a thickness of 100 nm and a Mg doping concentration of 1E19 cm -3 .

[0031] Example 1

[0032] The embodiment provides a semiconductor laser element 1 with a strain polarity topological layer, which has a structure as shown in the figure. Figure 1 The embodiment is different from the comparative example 1 in that:

[0033] A first strain polarity topological layer 1071 is arranged between the lower confinement layer 101 and the lower waveguide layer 102, and the first strain polarity topological layer 1071 is a three-dimensional high-order topological superlattice structure of a PbTiO3 / Ta2PdS5 binary combination, and has a thickness of 100 nm.

[0034] A second strain polarity topological layer 1072 is arranged between the upper waveguide layer 104 and the electron blocking layer 105, and the second strain polarity topological layer 1072 is a three-dimensional high-order topological superlattice structure of a PbTiO3 / SrTiO3 binary combination, and has a thickness of 100 nm.

[0035] Embodiment 2

[0036] The embodiment provides a semiconductor laser element 3 with a strain polarity topological layer, which has a structure as shown in the figure. Figure 1 The structure sequentially comprises a substrate 100, a lower confinement layer 101, a first strain polarity topological layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second strain polarity topological layer 1072, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top.

[0037] The substrate 100 is a sapphire / AlN composite substrate.

[0038] The lower confinement layer 101 is a combination of GaN and AlGaN, has a thickness of 50 nm, and has a Si doping concentration of 1E19 cm -3 .

[0039] The first strain polarity topological layer 1071 is a three-dimensional high-order topological superlattice structure formed by a SrZnSO / PbTiO3 / SrTiO3 ternary combination, and has a thickness of 50 nm.

[0040] The lower waveguide layer 102 is InGaN, has a thickness of 50 nm, and has a Si doping concentration of 1E16 cm -3 .

[0041] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, has a thickness of 80 angstroms, the barrier layer is AlInGaN, has a thickness of 120 angstroms, and the period number m is 4.

[0042] The upper waveguide layer 104 is AlInGaN, has a thickness of 50 nm, and has a Si doping concentration of 1E16 cm -3 .

[0043] The second strain polarity topological layer 1072 is a three-dimensional high-order topological superlattice structure formed by a PbTiO3 / CdPS3 / SrTiO3 ternary combination, and has a thickness of 500 nm.

[0044] The electron blocking layer 105 is AlInGaN, has a thickness of 20 nm, and has a Mg doping concentration of 1E18 cm -3 ;

[0045] The upper confining layer 106 is a combination of AlGaN and InGaN, has a thickness of 50 nm, and has a Mg doping concentration of 1E19 cm -3 .

[0046] Embodiment 3

[0047] This embodiment provides a semiconductor laser element 3 with a strain polarity topological layer, which has a structure as shown in Figure 1 The structure includes, from bottom to top, a substrate 100, a lower confining layer 101, a first strain polarity topological layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second strain polarity topological layer 1072, an electron blocking layer 105, and an upper confining layer 106.

[0048] The substrate 100 is a GaN substrate.

[0049] The lower confining layer 101 is a combination of InGaN and AlInGaN, has a thickness of 5000 nm, and has a Si doping concentration of 1E19 cm -3 ;

[0050] The first strain polarity topological layer 1071 is a three-dimensional high-order topological superlattice structure of a SrZnSO / PbTiO3 / Ta2PdS5 / SrTiO3 quaternary combination, and has a thickness of 100 nm.

[0051] The lower waveguide layer 102 is AlInGaN, has a thickness of 1000 nm, and has a Si doping concentration of 1E19 cm -3 ;

[0052] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, has a thickness of 30 angstroms, the barrier layer is a combination of GaN and AlInGaN, has a thickness of 50 angstroms, and the period number m is 1.

[0053] The upper waveguide layer 104 is a combination of GaN and InGaN, has a thickness of 1000 nm, and has a Si doping concentration of 1E19 cm -3 ;

[0054] The second strain polarity topological layer 1072 is a three-dimensional high-order topological superlattice structure formed by a SrZnSO / PbTiO3 / Ta2PdS5 / SrTiO3 quaternary combination, and has a thickness of 400 nm.

[0055] The electron blocking layer 105 is a combination of AlInGaN and AlN, has a thickness of 1000 nm, and has a Mg doping concentration of 1E20 cm -3 ;

[0056] The upper confining layer 106 is a combination of AlN and InN, has a thickness of 5000 nm, and has a Mg doping concentration of 1E19 cm -3 .

[0057] Embodiment 4

[0058] This embodiment provides a semiconductor laser element 4 with a strain polarity topological layer, which has a structure as shown in Figure 1 The semiconductor laser element 4 includes, in order from bottom to top, a substrate 100, a lower confining layer 101, a first strain polarity topological layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, a second strain polarity topological layer 1072, and an upper confining layer 106.

[0059] The substrate 100 is a sapphire / SiO2 composite substrate.

[0060] The lower confining layer 101 is a combination of GaN, AlGaN, and InGaN, has a thickness of 1000 nm, and has a Si doping concentration of 1E18 cm -3 ;

[0061] The first strain polarity topological layer 1071 and the second strain polarity topological layer 1072 are the same, and are both a heterojunction structure of a PbTiO3 / CdPS3 / hBN ternary combination, and each has a thickness of 300 nm.

[0062] The lower waveguide layer 102 is a combination of GaN, InGaN, and AlInGaN, has a thickness of 500 nm, and has a Si doping concentration of 1E17 cm -3 ;

[0063] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, has a thickness of 50 angstroms, the barrier layer is a combination of GaN and AlInN, has a thickness of 50 angstroms, and the period number m is 2.

[0064] The upper waveguide layer 104 is GaN, has a thickness of 500 nm, and has a Si doping concentration of 1E17 cm -3 ;

[0065] The electron blocking layer 105 is a combination of AlN, AlInN, with a thickness of 500 nm and a Mg doping concentration of 1E19 cm -3 ;

[0066] The upper confining layer 106 is a combination of AlN, InN, AlInN, with a thickness of 1000 nm and a Mg doping concentration of 1E19 cm -3 .

[0067] Embodiment 5

[0068] This embodiment provides a semiconductor laser element 5 with a strain polarity topological layer, which has a structure as shown in Figure 1 from bottom to top, including a substrate 100, a lower confining layer 101, a first strain polarity topological layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second strain polarity topological layer 1072, an electron blocking layer 105, and an upper confining layer 106; specifically:

[0069] The substrate 100 is a GaAs substrate;

[0070] The lower confining layer 101 is a combination of InGaN, AlInGaN, and AlN, with a thickness of 500 nm and a Si doping concentration of 1E18 cm -3 ;

[0071] The first strain polarity topological layer 1071 is a three-dimensional high-order topological superlattice structure of a five-element combination of SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3, with a thickness of 100 nm;

[0072] The lower waveguide layer 102 is a combination of GaN and AlInGaN, with a thickness of 700 nm and a Si doping concentration of 1E18 cm -3 ;

[0073] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer with a thickness of 50 angstroms, the barrier layer is a combination of GaN, AlGaN, and AlInN with a thickness of 70 angstroms, and the period number m is 3;

[0074] The upper waveguide layer 104 is a combination of GaN and AlInGaN, with a thickness of 700 nm and a Si doping concentration of 1E18 cm -3 ;

[0075] The second strain polarity topological layer 1072 is

[0076] a superlattice structure of a six-element combination of SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3 / hBN, with a thickness of 100 nm;

[0077] The electron blocking layer 105 is a combination of AlInGaN, AlN, AlInN, with a thickness of 600 nm and a Mg doping concentration of 1E19 cm -3 ;

[0078] The upper confining layer 106 is a combination of InGaN, AlN, AlInN, with a thickness of 500 nm and a Mg doping concentration of 1E19 cm -3 .

[0079] The semiconductor laser elements in the above comparative examples and the semiconductor laser elements with strain polarity topological layers in Examples 1-6 were subjected to performance tests, and the results are shown in Table 1 below:

[0080] Table 1 Performance test data of semiconductor laser elements in comparative examples and Examples 1-6

[0081]

[0082] As can be seen from Table 1 above, compared with conventional laser elements, the semiconductor laser elements with strain polarity topological layers of the present application have a beam quality factor reduced by more than 45%, a slope efficiency increased by more than 60%, a threshold current density reduced by more than 70%, an optical power increased by more than 50%, a confinement factor increased by more than 40%, and an internal optical loss reduced by more than 60%. This is because the strain polarity topological layer of the semiconductor laser element of the present application generates polarity anti-vortex and polarity topological characteristics, enhances tunable second harmonic and nonlinear optical properties, so that laser propagates along the direction of the active layer, prevents light leakage, more restricts the internal light field between the upper waveguide layer and the lower waveguide layer, reduces optical loss, enhances the confinement factor, reduces the excitation threshold of the laser element, and improves the optical power and the slope efficiency of the laser element.

[0083] Those skilled in the art should understand that the above description is only several specific embodiments of the present application, not all embodiments. It should be noted that many modifications and improvements can be made by those of ordinary skill in the art, and all modifications and improvements that do not exceed the scope of the claims should be considered as the protection scope of the present application.

Claims

1. A semiconductor laser device having a strain polarity topology layer, structurally comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: A first strain polarity topological layer (1071) is disposed between the lower confinement layer (101) and the lower waveguide layer (102), and a second strain polarity topological layer (1072) is disposed between the upper waveguide layer (104) and the electron blocking layer (105). The first strain polarity topological layer (1071) and the second strain polarity topological layer (1072) are the same or different, and are both three-dimensional high-order topological superlattice structures formed by any two or more combinations of SrZnSO, PbTiO3, Ta2PdS5, CdPS3, SrTiO3, and hexagonal boron nitride hBN.

2. A semiconductor laser element with a strained polarity topology layer according to claim 1, characterized in that, The substrate (100) is any one of the following: sapphire substrate, silicon substrate, Ge substrate, SiC substrate, AlN substrate, GaN substrate, GaAs substrate, InP substrate, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx composite substrate, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4 substrate, MgO substrate, ZnO substrate, ZrB2 substrate, and LiAlO2 / LiGaO2 composite substrate.

3. A semiconductor laser element with a strained polarity topology layer according to claim 1, characterized in that, The lower confinement layer (101) is any one or more of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 .

4. A semiconductor laser element with a strained polarity topology layer according to claim 1, characterized in that, The lower waveguide layer (102) and the upper waveguide layer (104) are combinations of any one or more of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm⁻¹. -3 .

5. A semiconductor laser element with a strained polarity topology layer according to claim 1, characterized in that, The active layer (103) is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1. The well layer is any one or a combination of two or more of InGaN, InN, AlInN, and GaN, with a thickness of 10-80 angstroms. The barrier layer is any one or a combination of more than one of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10-120 angstroms.

6. A semiconductor laser element with a strained polarity topology layer according to claim 1, characterized in that, The electron blocking layer (105) and the upper confinement layer (106) are any combination of one or more of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm⁻¹. -3 .

7. A semiconductor laser element with a strain polarity topology layer according to claim 1, characterized in that, The thickness of the first strain polar topology layer (1071) and the second strain polar topology layer (1072) is 5-500 nm.

8. A semiconductor laser element with a strain polarity topology layer as described in claim 1 or 7, characterized in that, The first strain polarity topological layer (1071) and the second strain polarity topological layer (1072) are three-dimensional high-order topological superlattice structures formed by the following binary combinations: SrZnSO / PbTiO3, SrZnSO / Ta2PdS5, SrZnSO / CdPS3, SrZnSO / SrTiO3, SrZnSO / hBN, PbTiO3 / Ta2PdS5, PbTiO3 / CdPS3, PbTiO3 / SrTiO3, PbTiO3 / hBN, Ta2PdS5 / CdPS3, Ta2PdS5 / SrTiO3, Ta2PdS5 / hBN, CdPS3 / SrTiO3, CdPS3 / hBN, SrTiO3 / hBN.

9. A semiconductor laser element with a strain polarity topology layer as described in claim 1 or 7, characterized in that, The first strain polarity topological layer (1071) and the second strain polarity topological layer (1072) are three-dimensional high-order topological superlattice structures formed by the following ternary combinations: SrZnSO / PbTiO3 / Ta2PdS5, SrZnSO / PbTiO3 / CdPS3, SrZnSO / PbTiO3 / SrTiO3, SrZnSO / PbTiO3 / hBN, SrZnSO / Ta2PdS5 / CdPS3, SrZnSO / Ta2PdS5 / SrTiO3, SrZnSO / Ta2PdS5 / hBN, SrZnSO / CdPS3 / SrTiO3, SrZnSO / CdPS3 / SrTiO3, SrZn SO / CdPS3 / hBN, SrZnSO / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3, PbTiO3 / Ta2PdS5 / SrTiO3, PbTiO3 / Ta2PdS5 / hBN, PbTiO3 / CdPS3 / SrTiO 3. PbTiO3 / CdPS3 / hBN, PbTiO3 / SrTiO3 / hBN, Ta2PdS5 / CdPS3 / SrTiO3, Ta2PdS5 / CdPS3 / hBN, Ta2PdS5 / SrTiO3 / hBN, CdPS3 / SrTiO3 / hBN.

10. A semiconductor laser element having a strain polarity topology layer as described in claim 1 or 7, characterized in that, The first strain polarity topological layer (1071) and the second strain polarity topological layer (1072) are three-dimensional high-order topological superlattice structures formed by the following quaternary, pentagonal, or hexaternary combinations: SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3, SrZnSO / PbTiO3 / Ta2PdS5 / SrTiO3, SrZnSO / PbTiO3 / Ta2PdS5 / hBN, SrZnSO / Ta2PdS5 / CdPS3 / SrTiO3, SrZnSO / Ta2PdS5 / CdPS3 / hBN, SrZnSO / Ta2PdS5 / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3, PbTiO3 / Ta2PdS5 / CdPS3 / hBN, Pb TiO3 / CdPS3 / SrTiO3 / hBN, Ta2PdS5 / CdPS3 / SrTiO3 / hBN, SrZnSO / PbTiO3 / Ta2PdS5 / C dPS3 / SrTiO3, SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / hBN, SrZnSO / PbTiO3 / Ta2PdS5 / SrTi O3 / hBN, SrZnSO / PbTiO3 / CdPS3 / SrTiO3 / hBN, SrZnSO / Ta2PdS5 / CdPS3 / SrTiO3 / hBN, PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3 / hBN, SrZnSO / PbTiO3 / Ta2PdS5 / CdPS3 / SrTiO3 / hBN.

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