Mask plate and manufacturing method thereof

Abstract

The present invention provides a mask plate and a method for manufacturing the same, belonging to the field of display technology. The mask plate comprises a ceramic mask plate body, the mask plate body including a plurality of first through-holes extending through the thickness of the mask plate body, the thickness of the mask plate body being less than the aperture of the first through-holes and greater than 0.1 times the aperture of the first through-holes. The technical solution of the present invention can achieve high-precision mask plates.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a mask plate and a manufacturing method thereof. Background Art

[0002] In the manufacturing process of OLED (Organic Light-Emitting Diode) devices, high-vacuum evaporation is typically used to create the device's organic layer. This evaporation process requires a high-precision metal mask (FMM) to create the light-emitting layers of the R, G, and B sub-pixels. While the market demands for higher pixel density (PPI) in OLED products, the limited precision of existing FMMs prevents the production of high PPI (greater than 4000) display products. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a mask plate and a manufacturing method thereof, which can realize a high-precision mask plate.

[0004] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0005] In one aspect, a mask is provided, comprising:

[0006] The mask plate body is made of ceramic material, and the mask plate body includes a plurality of first through holes penetrating the thickness direction of the mask plate body. The thickness of the mask plate body is smaller than the aperture of the first through holes and larger than 0.1 times the aperture of the first through holes.

[0007] In some embodiments, the mask further includes:

[0008] A magnetic metal layer is located on the mask plate body, and the magnetic metal layer includes a plurality of second through holes penetrating the thickness direction of the magnetic metal layer, the second through holes correspond to the first through holes one by one, and the orthographic projection of each second through hole on the mask plate body coincides with the corresponding first through hole.

[0009] In some embodiments, the diameter d1 of the first through hole and the diameter d2 of the second through hole satisfy the following relationship: 1%<|d1-d2| / d1<5%.

[0010] In some embodiments, the thickness of the mask body is 1.5 microns to 5 microns.

[0011] In some embodiments, the thickness of the mask body is smaller than the thickness of the magnetic metal layer.

[0012] In some embodiments, the mask further includes:

[0013] A magnetic metal interlayer is located within the mask plate body, and the magnetic metal interlayer includes a plurality of third through holes extending through the thickness direction of the magnetic metal interlayer, the third through holes corresponding one-to-one with the first through holes, and the orthographic projection of each third through hole on the mask plate body coincides with the corresponding first through hole.

[0014] In some embodiments, the thickness of the magnetic metal interlayer is 0.5-1.5 microns.

[0015] In some embodiments, the sidewalls of the first through hole, the sidewalls of the second through hole, and the sidewalls of the third through hole are stepped.

[0016] In some embodiments, the slope angle θ1 of the first through hole, the slope angle θ2 of the second through hole, and the slope angle θ3 of the third through hole satisfy: 55°≤θ1≤90°, 55°≤θ2≤θ1, 55°≤θ3≤θ2.

[0017] An embodiment of the present invention further provides a method for manufacturing a mask plate, which is used to manufacture the above-mentioned mask plate, comprising:

[0018] Making a ceramic layer;

[0019] forming a plurality of via holes on the ceramic layer;

[0020] The ceramic layer is thinned so that the thickness of the ceramic layer is less than the depth of the via hole to form a mask plate body, and the via hole is formed as a first through hole that penetrates the mask plate body in the thickness direction, and the thickness of the mask plate body is less than the aperture of the first through hole and greater than 0.1 times the aperture of the first through hole.

[0021] In some embodiments, the manufacturing method specifically includes:

[0022] Making a ceramic layer;

[0023] forming a magnetic metal layer on the ceramic layer, and patterning the magnetic metal layer to form a plurality of second through holes penetrating the magnetic metal layer in a thickness direction;

[0024] Using the pattern of the magnetic metal layer as a mask, etching the ceramic layer to form a plurality of via holes;

[0025] The ceramic layer is thinned from a side of the ceramic layer away from the magnetic metal layer to form the mask body, and the via hole is formed as a first through hole penetrating the mask body in a thickness direction.

[0026] In some embodiments, the manufacturing method specifically includes:

[0027] manufacturing a silicon substrate, wherein the silicon substrate comprises a silicon substrate and a plurality of columnar structures located on the silicon substrate;

[0028] forming a ceramic layer on the silicon substrate, wherein the ceramic layer includes a plurality of via holes corresponding one-to-one to the columnar structures;

[0029] The ceramic layer is thinned so that the thickness of the ceramic layer is smaller than the thickness of the columnar structure to form the mask plate body, wherein the via hole is formed as a first through hole penetrating the mask plate body in a thickness direction;

[0030] The silicon substrate is removed.

[0031] In some embodiments, before removing the silicon substrate, the method further includes:

[0032] A magnetic metal layer is formed on the thinned ceramic layer, and the sum of the thicknesses of the magnetic metal layer and the thinned ceramic layer is less than the thickness of the columnar structure.

[0033] In some embodiments, the manufacturing method specifically includes:

[0034] forming a ceramic layer, and forming a plurality of first via holes on the ceramic layer;

[0035] forming a magnetic metal layer on the ceramic layer, wherein the magnetic metal layer fills the first via hole, and a surface of the magnetic metal layer away from the ceramic layer is flush;

[0036] Etching the magnetic metal layer in the first via hole to form a plurality of second via holes, wherein the size of the second via holes is smaller than the size of the first via hole;

[0037] The ceramic layer is thinned from a side of the ceramic layer away from the magnetic metal layer, so that the second via hole penetrates the ceramic layer to form the first through hole.

[0038] In some embodiments, the manufacturing method specifically includes:

[0039] forming a first ceramic layer, and forming a plurality of third via holes on the first ceramic layer;

[0040] forming a magnetic metal layer on the first ceramic layer, wherein the magnetic metal layer fills the third via hole, and a surface of the magnetic metal layer away from the first ceramic layer is flush;

[0041] Etching the magnetic metal layer to form a plurality of magnetic metal pillars, wherein the magnetic metal pillars correspond one-to-one to the third via holes;

[0042] forming a second ceramic layer on the magnetic metal layer having the magnetic metal pillars formed thereon;

[0043] thinning a side of the first ceramic layer away from the magnetic metal layer, and thinning a side of the second ceramic layer away from the magnetic metal layer, until the magnetic metal layer is exposed;

[0044] The magnetic metal layer corresponding to the third via hole is removed, so that the third via hole is formed into the first through hole.

[0045] The embodiments of the present invention have the following beneficial effects:

[0046] In the above scheme, a ceramic material is used to make the mask plate. The ceramic material has the advantages of low thermal expansion coefficient, high hardness, and easy processing and molding. It can be used to make a high-precision vapor deposition mask plate. In addition, the thickness of the mask plate body is less than the aperture of the first through hole. This can avoid the thickness of the mask plate being too thick and ensure the uniformity of the vapor deposition sub-pixels; the thickness of the mask plate body is greater than 0.1 times the aperture of the first through hole, which can avoid the thickness of the mask plate being too thin and ensure the structural strength and service life of the mask plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1-Figure 5 Schematic diagram of the process of manufacturing a mask plate according to an embodiment of the present invention.

[0048] Reference numerals

[0049] 01 Ceramic layer

[0050] 02 Magnetic metal layer

[0051] 03 Photoresist

[0052] 011 Via

[0053] 012 First through hole

[0054] 013 Mask plate body

[0055] 014 First via

[0056] 015 Third via

[0057] 021 Second through hole

[0058] 022 Second via

[0059] 023 Magnetic Metal Pillar

[0060] 04 Silicon Substrate

[0061] 05 First ceramic layer

[0062] 06 Second ceramic layer DETAILED DESCRIPTION

[0063] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, they will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0064] Traditional FMM uses Invar alloy (iron-nickel alloy) as a mask strip. High-precision apertures are created in the mask strip through etching, laser drilling, and electroforming. During the vapor deposition process, the deposited material passes through the FMM's high-precision apertures, forming an RGB pixel pattern on the deposition substrate. However, due to processing limitations, traditional FMM is no longer suitable for high-PPI display products.

[0065] To produce high-PPI display products, a fine silicon mask (FSM) can be used. This involves using a wafer to create a mask plate, thinning the wafer locally, and using deep silicon etching technology to create high-precision openings. However, the relatively thick silicon wafer results in an excessively thick mask layer and a high aspect ratio for the openings. This results in poor film uniformity of the deposited material within the openings and reduces material utilization. If the mask strip thickness is reduced, lowering the aspect ratio, the silicon wafer is more likely to crack, and the FSM processing yield decreases, leading to increased display product costs.

[0066] The embodiment of the present invention provides a mask plate and a manufacturing method thereof, which can realize a high-precision mask plate.

[0067] An embodiment of the present invention provides a mask plate, comprising:

[0068] The mask plate body is made of ceramic material, and the mask plate body includes a plurality of first through holes penetrating the thickness direction of the mask plate body. The thickness of the mask plate body is smaller than the aperture of the first through holes and larger than 0.1 times the aperture of the first through holes.

[0069] In this embodiment, a ceramic material is used to make the mask plate. The ceramic material can be alumina, zirconium oxide, or aluminum nitride. Ceramic materials have the advantages of low thermal expansion coefficient, high hardness, and easy processing and molding. They can be used to make high-precision vapor deposition masks. In addition, the thickness of the mask plate body is less than the aperture of the first through hole. This can prevent the mask plate from being too thick and ensure the uniformity of the vapor-deposited sub-pixels. The thickness of the mask plate body is greater than 0.1 times the aperture of the first through hole. This can prevent the mask plate from being too thin and ensure the structural strength and service life of the mask plate. The first through hole corresponds to the vapor deposition position of the substrate to be vapor-deposited. During the vapor deposition process, the organic material can form an organic material pattern on the substrate to be vapor-deposited through the first through hole.

[0070] Specifically, the thickness of the mask plate body can be 0.2-0.8 times the aperture of the first through hole, or the thickness of the mask plate body can be 0.3-0.7 times the aperture of the first through hole, or the thickness of the mask plate body can be 0.4-0.9 times the aperture of the first through hole, etc.

[0071] In some embodiments, the mask further includes:

[0072] A magnetic metal layer is located on the mask plate body, and the magnetic metal layer includes a plurality of second through holes extending through the thickness direction of the magnetic metal layer, the second through holes correspond to the first through holes one by one, and the orthographic projection of each second through hole on the mask plate body coincides with the corresponding first through hole. The magnetic metal layer can be iron, nickel, cobalt or an alloy of these metals. During vapor deposition, the magnetic metal layer can be attracted by the magnetic field in the vapor deposition machine, so that the mask plate is closely attached to the substrate to be evaporated, thereby reducing the poor vapor deposition caused by the gap between the mask plate and the substrate to be evaporated.

[0073] In some embodiments, the sidewall of the first through hole and the sidewall of the second through hole may form a stepped structure, which can reduce the evaporation shadow effect.

[0074] The thickness of the magnetic metal layer can be 0.5-1.5 microns, such as 0.5 microns, 0.6 microns, 0.7 microns, 0.8 microns, 0.9 microns, 1.0 microns, 1.1 microns, 1.2 microns, 1.3 microns, 1.4 microns or 1.5 microns. This allows the magnetic metal layer to generate sufficient attraction under the action of the magnetic field to stick the mask plate close to the substrate to be evaporated, without causing the mask plate to be too thick.

[0075] In some embodiments, the thickness of the mask body may be smaller than the thickness of the magnetic metal layer, so as to provide sufficient attraction to hold the mask close to the substrate to be evaporated.

[0076] In some embodiments, the thickness of the mask plate body is 1.5 microns to 5 microns, such as 1.5 microns, 2 microns, 2.5 microns, 3 microns, 3.5 microns, 4 microns, 4.5 microns or 5 microns. When the thickness of the mask plate body is 1.5 microns to 5 microns, the structural strength of the mask plate body can be ensured, and the aspect ratio of the opening will not be too high. The uniformity of the film formation of the evaporated material in the hole can be ensured, thereby improving material utilization.

[0077] In some embodiments, the aperture d1 of the first through hole and the aperture d2 of the second through hole satisfy the following relationship: 1%<|d1-d2| / d1<5%, which can ensure the stability of the mask structure.

[0078] In some embodiments, the mask further includes:

[0079] A magnetic metal interlayer is located within the mask body, comprising a plurality of third through-holes extending through the thickness of the magnetic metal interlayer. The third through-holes correspond one-to-one with the first through-holes, and the orthographic projection of each third through-hole on the mask body coincides with the corresponding first through-hole. The magnetic metal interlayer can be made of iron, nickel, cobalt, or alloys of these metals. During vapor deposition, the magnetic metal interlayer can be attracted by a magnetic field within the vapor deposition machine, causing the mask to adhere closely to the substrate to be deposited, thereby minimizing vapor deposition defects caused by a gap between the mask and the substrate to be deposited.

[0080] The thickness of the magnetic metal interlayer can be 0.5-1.5 microns, such as 0.5 microns, 0.6 microns, 0.7 microns, 0.8 microns, 0.9 microns, 1.0 microns, 1.1 microns, 1.2 microns, 1.3 microns, 1.4 microns or 1.5 microns. In this way, the magnetic metal interlayer can generate sufficient attraction under the action of the magnetic field to stick the mask plate close to the substrate to be evaporated without causing the mask plate to be too thick.

[0081] In some embodiments, the sidewall of the first through hole and the sidewall of the third through hole may form a stepped structure, which can reduce the evaporation shadow effect.

[0082] In some embodiments, the mask plate can include both a magnetic metal layer and a magnetic metal interlayer. This provides sufficient attraction to hold the mask plate in close contact with the substrate during evaporation. The sidewalls of the first through-hole, the second through-hole, and the third through-hole can be stepped to reduce the shadow effect caused by evaporation.

[0083] In some embodiments, the slope angle θ1 of the first through hole, the slope angle θ2 of the second through hole, and the slope angle θ3 of the third through hole satisfy: 55°≤θ1≤90°, 55°≤θ2≤θ1, 55°≤θ3≤θ2, which can reduce the evaporation shadow effect.

[0084] An embodiment of the present invention further provides a method for manufacturing a mask plate, comprising:

[0085] Making a ceramic layer;

[0086] forming a plurality of via holes on the ceramic layer;

[0087] The ceramic layer is thinned so that the thickness of the ceramic layer is less than the depth of the via hole to form a mask plate body, and the via hole is formed as a first through hole that penetrates the mask plate body in the thickness direction, and the thickness of the mask plate body is less than the aperture of the first through hole and greater than 0.1 times the aperture of the first through hole.

[0088] In this embodiment, a ceramic material is used to make the mask plate. The ceramic material can be alumina, zirconium oxide, or aluminum nitride. Ceramic materials have the advantages of low thermal expansion coefficient, high hardness, and easy processing and molding. They can be used to make high-precision vapor deposition masks. In addition, the thickness of the mask plate body is less than the aperture of the first through hole. This can prevent the mask plate from being too thick and ensure the uniformity of the vapor-deposited sub-pixels. The thickness of the mask plate body is greater than 0.1 times the aperture of the first through hole. This can prevent the mask plate from being too thin and ensure the structural strength and service life of the mask plate. The first through hole corresponds to the vapor deposition position of the substrate to be vapor-deposited. During the vapor deposition process, the organic material can form an organic material pattern on the substrate to be vapor-deposited through the first through hole.

[0089] Specifically, the thickness of the mask plate body can be 0.2-0.8 times the aperture of the first through hole, or the thickness of the mask plate body can be 0.3-0.7 times the aperture of the first through hole, or the thickness of the mask plate body can be 0.4-0.9 times the aperture of the first through hole, etc.

[0090] In this embodiment, a ceramic layer can be produced by a tape casting method. The thickness of the ceramic layer is 100 microns to 500 microns. After the ceramic layer is etched to form a via hole, the ceramic layer is thinned. Physical grinding and polishing or chemical corrosion can be used to thin the ceramic layer so that the thickness of the ceramic layer is reduced to 1.5 microns to 5 microns. At the same time, the via hole is formed as a first through hole that penetrates the ceramic layer.

[0091] In this embodiment, in addition to using ceramic material to form the mask plate body, a magnetic metal layer can also be formed on the mask plate body. The magnetic metal layer includes a plurality of second through holes that penetrate the magnetic metal layer in the thickness direction. The second through holes correspond to the first through holes one by one, and the orthographic projection of each second through hole on the mask plate body coincides with the corresponding first through hole. The magnetic metal layer can be iron, nickel, cobalt or an alloy of these metals. During evaporation, the magnetic metal layer can be attracted by the magnetic field in the evaporation machine, so that the mask plate is close to the substrate to be evaporated, thereby reducing the poor evaporation caused by the gap between the mask plate and the substrate to be evaporated.

[0092] The thickness of the magnetic metal layer can be 0.5-1.5 microns, such as 0.5 microns, 0.6 microns, 0.7 microns, 0.8 microns, 0.9 microns, 1.0 microns, 1.1 microns, 1.2 microns, 1.3 microns, 1.4 microns or 1.5 microns. This allows the magnetic metal layer to generate sufficient attraction under the action of the magnetic field to stick the mask plate close to the substrate to be evaporated, without causing the mask plate to be too thick.

[0093] In this embodiment, in addition to using a ceramic material to form the mask body, a magnetic metal interlayer can also be formed within the mask body. The magnetic metal interlayer includes a plurality of third through-holes extending through the thickness of the magnetic metal interlayer. Each of the third through-holes corresponds one-to-one with the first through-holes, and the orthographic projection of each third through-hole on the mask body coincides with the corresponding first through-hole. The magnetic metal interlayer can be made of iron, nickel, cobalt, or alloys of these metals. During vapor deposition, the magnetic metal interlayer can be attracted by the magnetic field within the vapor deposition machine, causing the mask to adhere closely to the substrate to be deposited, thereby reducing vapor deposition defects caused by the gap between the mask and the substrate to be deposited.

[0094] The thickness of the magnetic metal interlayer can be 0.5-1.5 microns, such as 0.5 microns, 0.6 microns, 0.7 microns, 0.8 microns, 0.9 microns, 1.0 microns, 1.1 microns, 1.2 microns, 1.3 microns, 1.4 microns or 1.5 microns. In this way, the magnetic metal interlayer can generate sufficient attraction under the action of the magnetic field to stick the mask plate close to the substrate to be evaporated without causing the mask plate to be too thick.

[0095] In a specific example, Figure 1 As shown, the method for manufacturing the mask plate of this embodiment includes the following steps:

[0096] Step 1: Figure 1 As shown in a, a ceramic material such as aluminum oxide, aluminum nitride, or zirconium oxide is selected as the mask body, and a ceramic layer 01 is manufactured using a tape casting method. The thickness of the ceramic layer 01 is 100 to 500 microns.

[0097] A magnetic metal layer 02 is formed on the surface of the ceramic layer 01. The material of the magnetic metal layer 02 can be iron, nickel, cobalt or alloys of these metals, and the thickness is 0.5 micrometer to 1 micrometer.

[0098] Step 2: Figure 1 As shown in b, a photoresist 03 is coated on the magnetic metal layer 02, and the photoresist 03 is exposed and developed using a mask plate to form a pattern of the photoresist 03. The pattern of the photoresist 03 includes a plurality of openings arranged in an array, and the aperture, shape and number of the openings match the pattern of the organic material of the substrate to be evaporated.

[0099] Step 3: Figure 1 As shown in c, the pattern of the photoresist 03 is used as a mask to etch the magnetic metal layer 02 and the ceramic layer 01, and then the photoresist 03 is removed.

[0100] Specifically, the magnetic metal layer 02 can be etched using the pattern of the photoresist 03 as a mask, and then the ceramic layer 01 can be etched using the pattern of the magnetic metal layer 02 as a mask to form a plurality of vias 011. The total etching depth is greater than the thickness of the magnetic metal layer 02 and less than the sum of the thicknesses of the magnetic metal layer 02 and the ceramic layer 01. The etching depth can be 5 microns to 20 microns, such as Figure 1 As shown, after etching, a second through hole 021 penetrating the thickness direction of the magnetic metal layer and a via hole 011 penetrating a portion of the ceramic layer 01 are formed. The shape and aperture of the via hole 011 are the same as those of the second through hole 021 .

[0101] Step 4: Figure 1 As shown in Figure d, ceramic layer 01 is thinned from the side away from magnetic metal layer 02 until the combined thickness of ceramic layer 01 and magnetic metal layer 02 reaches 1.5 to 5 microns. Ceramic layer 01 is then formed into mask body 013. Via holes 011 extending through ceramic layer 01 are formed into first through-holes 012 extending through ceramic layer 01. The shape and diameter of first through-hole 012 are identical to those of second through-hole 021. Second through-hole 021 and first through-hole 012 form high-precision apertures in the mask. During the vapor deposition process, organic material can form an organic material pattern on the substrate to be vapor-deposited through these high-precision apertures.

[0102] In another specific example, a mask plate can be made with the help of a silicon substrate, such as Figure 2 As shown, the method for manufacturing the mask plate of this embodiment includes the following steps:

[0103] Step 1: Figure 2 As shown in a, a silicon substrate 04 is manufactured, wherein the silicon substrate 04 includes a silicon substrate and a plurality of columnar structures located on the silicon substrate;

[0104] Specifically, a silicon wafer is used to create a silicon substrate. Semiconductor photolithography and dry etching methods can be used to create an array of columnar structures on the surface of the silicon wafer. The columnar structure array corresponds one-to-one with the openings in the mask. The height of the columnar structures can range from 5 to 20 microns, slightly greater than the depth of the mask openings.

[0105] Step 2: Figure 2As shown in b, a ceramic layer 01 is formed on the silicon substrate 04. Specifically, a tape casting method can be used to sinter a ceramic slurry on the silicon substrate 04 to form the ceramic layer 01. The thickness of the ceramic layer 01 can be 100 microns to 500 microns, which is greater than the height of the columnar structure, so that the ceramic layer 01 includes a plurality of vias corresponding to the columnar structures. The ceramic layer 01 is thinned, for example, by grinding and polishing the ceramic layer 01, so that the thickness of the ceramic layer 01 is less than the thickness of the columnar structure. The thickness of the ceramic layer 01 is retained to the required thickness of the mask plate body, for example, 1.5 microns to 5 microns, to form the mask plate body 013. The vias are formed as first through holes 012 that penetrate the mask plate body in the thickness direction.

[0106] Step 3: Figure 3 As shown in c, the silicon substrate 04 is removed, for example, by using a chemical etching method. After the silicon substrate 04 is removed, the remaining ceramic layer 01 is formed into a mask body including a first through hole 012 .

[0107] In another specific example, a mask plate can be made with the help of a silicon substrate, such as Figure 3 As shown, the method for manufacturing the mask plate of this embodiment includes the following steps:

[0108] Step 1: Figure 3 As shown in a, a silicon substrate 04 is manufactured, wherein the silicon substrate 04 includes a silicon substrate and a plurality of columnar structures located on the silicon substrate;

[0109] Specifically, a silicon wafer is used to create a silicon substrate. Semiconductor photolithography and dry etching methods can be used to create an array of columnar structures on the surface of the silicon wafer. The columnar structure array corresponds one-to-one with the openings in the mask. The height of the columnar structures can range from 5 to 20 microns, slightly greater than the depth of the mask openings.

[0110] Step 2: Figure 3 As shown in b, a ceramic layer 01 is formed on the silicon substrate 04. Specifically, a tape casting method can be used to sinter a ceramic slurry on the silicon substrate 04 to form the ceramic layer 01. The thickness of the ceramic layer 01 can be 100 microns to 500 microns, which is greater than the height of the columnar structure, so that the ceramic layer 01 includes a plurality of vias corresponding to the columnar structures. The ceramic layer 01 is thinned, for example, by grinding and polishing the ceramic layer 01, so that the thickness of the ceramic layer 01 is less than the thickness of the columnar structure. The thickness of the ceramic layer 01 is retained to the required thickness of the mask plate body, for example, 1.5 microns to 5 microns, to form the mask plate body 013. The vias are formed as first through holes 012 that penetrate the mask plate body in the thickness direction.

[0111] A magnetic metal layer 02 is formed on the mask body 013 . The material of the magnetic metal layer 02 can be iron, nickel, cobalt or alloys of these metals, and the thickness is 0.5 micrometer to 1 micrometer.

[0112] Step 3: Figure 3 As shown in Figure c, silicon substrate 04 is removed, for example, by chemical etching. After removal, the remaining ceramic layer 01 forms a mask body 013 including a first through-hole 012. The magnetic metal layer 02 has a second through-hole 021. The shape and diameter of first through-hole 012 are identical to those of second through-hole 021. Second through-hole 021 and first through-hole 012 form high-precision openings in the mask. During the vapor deposition process, organic material can form a pattern on the substrate through these high-precision openings.

[0113] In another specific example, Figure 4 As shown, the method for manufacturing the mask plate of this embodiment includes the following steps:

[0114] Step 1: forming a ceramic layer 01;

[0115] like Figure 4 As shown in a, ceramic materials such as aluminum oxide, aluminum nitride, and zirconium oxide are selected and tape-casting method is used to manufacture the ceramic layer 01. The thickness of the ceramic layer 01 can be 100 microns to 500 microns.

[0116] Step 2: Figure 4 As shown in b, a plurality of first via holes 014 are formed on the ceramic layer 01;

[0117] Photoresist can be coated on the ceramic layer 01, and the photoresist is exposed and developed using a mask plate to form a photoresist pattern. The photoresist pattern includes a plurality of openings arranged in an array. Using the photoresist pattern as a mask, the ceramic layer 01 is etched to form a plurality of first via holes 014. The aperture of the first via hole 014 can be 1 to 2 microns larger than the aperture of the high-precision opening of the mask plate to be manufactured.

[0118] Step 3: Figure 4 As shown in c, a magnetic metal layer 02 is formed on the ceramic layer 01, the magnetic metal layer 02 fills the first via hole 014, and the surface of the magnetic metal layer 02 away from the ceramic layer 01 is flush;

[0119] The material of the magnetic metal layer 02 can be iron, nickel, cobalt or an alloy of these metals. The thickness of the magnetic metal layer 02 extending beyond the ceramic layer 01 can be 0.5 microns to 1 micron. The magnetic metal layer 02 is ground so that the surface of the magnetic metal layer 02 away from the ceramic layer 01 is flush.

[0120] Step 4: Figure 4 As shown in d, the magnetic metal layer 02 in the first via hole is etched to form a plurality of second via holes 022 , wherein the aperture of the second via hole 022 is smaller than that of the first via hole 014 ;

[0121] Step 5: Figure 4 As shown in Figure e, the ceramic layer 01 is thinned from the side away from the magnetic metal layer 02 until the total thickness of the ceramic layer 01 and the magnetic metal layer 02 is 1.5 to 5 microns. The ceramic layer 01 is formed into a mask body 013, and the second vias 022 penetrate the ceramic layer to form the first through-holes 012. The first through-holes 012 constitute the high-precision openings of the mask. During the evaporation process, the organic material can form an organic material pattern on the substrate to be evaporated through the high-precision openings.

[0122] In this embodiment, the high-precision openings of the mask plate are formed by using the magnetic metal layer 02, which can improve the opening accuracy.

[0123] In another specific example, Figure 5 As shown, the method for manufacturing the mask plate of this embodiment includes the following steps:

[0124] Step 1: forming a first ceramic layer 05;

[0125] like Figure 5 As shown in a, a ceramic material such as aluminum oxide, aluminum nitride, or zirconium oxide is selected and tape-casting method is used to manufacture the first ceramic layer 05. The thickness of the first ceramic layer 05 can be 100 microns to 500 microns.

[0126] Step 2: Figure 5 As shown in b, a plurality of third via holes 015 are formed on the first ceramic layer 05;

[0127] Photoresist can be coated on the first ceramic layer 05, and the photoresist is exposed and developed using a mask to form a photoresist pattern. The photoresist pattern includes multiple array-arranged openings. The first ceramic layer 05 is etched using the photoresist pattern as a mask to form multiple third vias 015.

[0128] Step 3: Figure 5 As shown in c, a magnetic metal layer 02 is formed on the first ceramic layer 05, the magnetic metal layer 02 fills the third via hole 015, and the surface of the magnetic metal layer 02 away from the first ceramic layer 05 is flush;

[0129] The material of the magnetic metal layer 02 can be iron, nickel, cobalt or an alloy of these metals. The thickness of the magnetic metal layer 02 extending beyond the first ceramic layer 05 can be 0.5 microns to 1 micron. The magnetic metal layer 02 is ground so that the surface of the magnetic metal layer 02 away from the first ceramic layer 05 is flush.

[0130] Step 4: Figure 5 As shown in d, the magnetic metal layer 02 is etched to form a plurality of magnetic metal pillars 023. The magnetic metal pillars 023 correspond to the third via holes 015 one by one, and the orthographic projection of the magnetic metal pillars 023 on the first ceramic layer 05 coincides with the third via holes 015.

[0131] Step 5: Figure 5 As shown in FIG. e, a second ceramic layer 06 is formed on the magnetic metal layer 02 having the magnetic metal pillars 023 formed thereon;

[0132] The second ceramic layer 06 may be made of ceramic materials such as aluminum oxide, aluminum nitride, and zirconium oxide using a tape casting method. The thickness of the second ceramic layer 06 may be 100 microns to 500 microns.

[0133] Step 6: Figure 5 As shown in FIG. 5 , the side of the first ceramic layer 05 away from the magnetic metal layer 02 is thinned until the magnetic metal pillar 023 is exposed, and the side of the second ceramic layer 06 away from the magnetic metal layer 02 is thinned until the magnetic metal layer 02 in the third via hole is exposed.

[0134] Step 7: Figure 5 As shown in FIG. 5 , the magnetic metal layer 02 corresponding to the third via hole 015 is removed, so that the third via hole 015 is formed into the first through hole 012 .

[0135] Specifically, the magnetic metal layer corresponding to the third via can be removed by chemical corrosion, and the orthographic projection of the removed magnetic metal layer on the first ceramic layer 05 coincides with the third via, retaining a ceramic-magnetic metal interlayer-ceramic interlayer structure with high-precision openings. The total thickness can be 1.5 to 5 microns, and the thickness of the magnetic metal interlayer can be 0.5-1.5 microns.

[0136] In the above embodiments, the ceramic layer is formed by tape casting and sintering as an example. Alternatively, the ceramic layer can be formed by injection molding and sintering.

[0137] It should be noted that the various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from other embodiments. In particular, since the embodiments are generally similar to the product embodiments, the description is relatively simple. For relevant parts, refer to the partial description of the product embodiments.

[0138] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0139] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0140] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0141] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A method for manufacturing a mask plate, characterized in that: The production method comprises: Making a ceramic layer; forming a plurality of via holes on the ceramic layer; The ceramic layer is thinned so that the thickness of the ceramic layer is less than the depth of the via hole, thereby forming a mask plate body, wherein the via hole is formed as a first through hole penetrating the mask plate body in a thickness direction, and the thickness of the mask plate body is less than the aperture of the first through hole and greater than 0.1 times the aperture of the first through hole; The production method specifically includes: Making a ceramic layer; forming a magnetic metal layer on the ceramic layer, and patterning the magnetic metal layer to form a plurality of second through holes penetrating the magnetic metal layer in a thickness direction; Using the pattern of the magnetic metal layer as a mask, etching the ceramic layer to form a plurality of via holes; The ceramic layer is thinned from a side of the ceramic layer away from the magnetic metal layer to form the mask plate body, and the via hole is formed as a first through hole penetrating the thickness direction of the mask plate body; Forming the ceramic layer and the first through hole specifically includes: forming a first ceramic layer, and forming a plurality of third via holes on the first ceramic layer; forming a magnetic metal layer on the first ceramic layer, wherein the magnetic metal layer fills the third via hole, and a surface of the magnetic metal layer away from the first ceramic layer is flush; Etching the magnetic metal layer to form a plurality of magnetic metal pillars, wherein the magnetic metal pillars correspond one-to-one to the third via holes; forming a second ceramic layer on the magnetic metal layer having the magnetic metal pillars formed thereon; thinning a side of the first ceramic layer away from the magnetic metal layer, and thinning a side of the second ceramic layer away from the magnetic metal layer, until the magnetic metal layer is exposed; The magnetic metal layer corresponding to the third via hole is removed, so that the third via hole is formed into the first through hole.

2. The method for manufacturing a mask according to claim 1, wherein: The production method specifically includes: manufacturing a silicon substrate, wherein the silicon substrate comprises a silicon substrate and a plurality of columnar structures located on the silicon substrate; forming a ceramic layer on the silicon substrate, wherein the ceramic layer includes a plurality of via holes corresponding one-to-one to the columnar structures; The ceramic layer is thinned so that the thickness of the ceramic layer is smaller than the thickness of the columnar structure to form the mask plate body, wherein the via hole is formed as a first through hole penetrating the mask plate body in a thickness direction; The silicon substrate is removed.

3. The method for manufacturing a mask according to claim 2, wherein: Before removing the silicon substrate, the method further includes: A magnetic metal layer is formed on the thinned ceramic layer, and the sum of the thicknesses of the magnetic metal layer and the thinned ceramic layer is less than the thickness of the columnar structure.

4. The method for manufacturing a mask according to claim 1, wherein: The production method specifically includes: forming a ceramic layer, and forming a plurality of first via holes on the ceramic layer; forming a magnetic metal layer on the ceramic layer, wherein the magnetic metal layer fills the first via hole, and a surface of the magnetic metal layer away from the ceramic layer is flush; Etching the magnetic metal layer in the first via hole to form a plurality of second via holes, wherein the size of the second via holes is smaller than the size of the first via hole; The ceramic layer is thinned from a side of the ceramic layer away from the magnetic metal layer, so that the second via hole penetrates the ceramic layer to form the first through hole.

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