High-frequency module and communication device

Abstract

The high-frequency module (1) includes: a module substrate (90) having a main surface (90a); an integrated circuit (70) disposed on the main surface (90a) and forming a power amplifier circuit (11); and an SMD (41d) disposed on the main surface (90a) and forming a circuit element directly connected to the power amplifier circuit (11). The integrated circuit (70) includes: a first substrate (71), at least a part of the first substrate (71) being made of a first semiconductor material; and a second substrate (72), at least a part of the second substrate (72) being made of a second semiconductor material. The power amplifier circuit (11) is formed on the second substrate (72). The first substrate (71) has sides (71s1) and (71s2) facing each other in a plan view. In the plan view, the SMD (41d) is closer to the side (71s1) than to the side (71s2). In the plan view, the second substrate (72) is smaller than the first substrate (71), and the second substrate (72) overlaps the first substrate (71) at a position closer to the side (71s1) than to the side (71s2).

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as mobile phones, in particular, as the multi-band progresses, the configuration structure of circuit elements constituting a high-frequency front-end circuit becomes complicated.

[0003] In the high-frequency module of Patent Document 1, a controller is stacked above a power amplifier disposed on a package substrate, thereby achieving miniaturization of the high-frequency module.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: U.S. Patent Application Publication No. 2017 / 0338847 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] However, in the above prior art, when a base material (hereinafter referred to as a second base material) below the power amplifier is smaller than a base material above (hereinafter referred to as a first base material), the wiring connecting the power amplifier and other circuit elements sometimes becomes long.

[0009] Therefore, the present invention provides a high-frequency module and a communication device capable of shortening the wiring connecting a power amplifier circuit formed on a second base material disposed overlapping a first base material and a circuit element.

[0010] Means for Solving the Problems

[0011] A high-frequency module according to one aspect of the present invention includes: a module substrate having a main surface; an integrated circuit disposed on the main surface and forming a power amplifier circuit; and an electronic component disposed on the main surface and forming a circuit element directly connected to the power amplifier circuit, wherein the integrated circuit includes: a first base material at least a part of which is made of a first semiconductor material; and a second base material at least a part of which is made of a second semiconductor material different from the first semiconductor material, and a power amplifier circuit is formed on the second base material, the first base material has a first side and a second side facing each other in a plan view, in the plan view, the electronic component is closer to the first side than to the second side, in the plan view, the second base material is smaller than the first base material, and the second base material overlaps the first base material at a position closer to the first side than to the second side.

[0012] Effects of the Invention

[0013] The high-frequency module according to one aspect of the present invention can shorten the wiring connecting the power amplifier circuit formed on the second substrate disposed overlapping the first substrate and the circuit element. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 1 is a circuit structure diagram of the high-frequency module and the communication device according to the embodiment.

[0015] Figure 2 FIG. 2 is a top view of the high-frequency module according to the embodiment.

[0016] Figure 3 FIG. 3 is a cross-sectional view of the high-frequency module according to the embodiment.

[0017] Figure 4 FIG. 4 is a partial cross-sectional view of the high-frequency module according to the embodiment.

[0018] Figure 5 FIG. 5 is a partial cross-sectional view of the high-frequency module according to the embodiment.

[0019] Figure 6 FIG. 6 is a partial top view of the high-frequency module according to the embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the embodiments described below are all general or specific examples. The numerical values, shapes, materials, structural elements, arrangements and connection methods of the structural elements shown in the following embodiments are examples, and the gist thereof is not intended to limit the present invention.

[0021] In addition, each drawing is a schematic diagram in which emphasis, omission, or ratio adjustment is appropriately made for representing the present invention, and is not necessarily strictly illustrated, and sometimes differs from the actual shape, positional relationship, and ratio. In each drawing, substantially the same structures are denoted by the same reference numerals, and repeated descriptions may be omitted or simplified.

[0022] In the following drawings, the x-axis and the y-axis are axes orthogonal to each other on a plane parallel to the main surface of the module substrate. Specifically, when the module substrate has a rectangular shape in plan view, the x-axis is parallel to the first side of the module substrate, and the y-axis is parallel to the second side of the module substrate orthogonal to the first side. In addition, the z-axis is an axis perpendicular to the main surface of the module substrate, the positive direction of the z-axis represents the upward direction, and the negative direction of the z-axis represents the downward direction.

[0023] In the circuit structure of the present invention, "connection" includes not only the case of direct connection through connection terminals and / or wiring conductors, but also the case of electrical connection via other circuit elements. "Direct connection" means direct connection through connection terminals and / or wiring conductors without passing through other circuit elements. "Connected between A and B" means being connected to both A and B between A and B, and in addition to including the case of being serially connected to the path connecting A and B, it also includes the case of being connected between the path and the ground.

[0024] In the component arrangement of the present invention, "looking down" means observing an object by orthographically projecting it onto the xy plane from the positive side of the z axis. "When looking down, A and B overlap" means that the region of A orthographically projected onto the xy plane overlaps with the region of B orthographically projected onto the xy plane. "A is arranged between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A. In addition, terms indicating the relationality between elements such as "parallel" and "perpendicular", terms indicating the shape of elements such as "rectangle", and numerical ranges represent substantially equivalent ranges, for example, including an error of about a few percent, rather than only representing a strict meaning.

[0025] In addition, "a component is arranged on a substrate" includes not only the case where the component is arranged on the substrate in a state of being in contact with the substrate, but also the following cases: the component is arranged above the substrate in a manner not in contact with the substrate (for example, the component is stacked on other components arranged on the substrate); and a part or all of the component is buried in the substrate. In addition, "a component is arranged on the main surface of a substrate" includes not only the case where the component is arranged on the main surface in a state of being in contact with the main surface of the substrate, but also the following cases: the component is arranged above the main surface in a manner not in contact with the main surface; and a part of the component is buried in the substrate from the main surface side.

[0026] In the material structure of the present invention, "object A is composed of material B" means that the main component of A is B. Here, the main component means the component having the largest weight ratio among the multiple components contained in the object.

[0027] (Embodiment)

[0028] [1.1 Circuit Structure of High-Frequency Module 1 and Communication Device 5]

[0029] Refer to Figure 1 to describe the circuit structure of the high-frequency module 1 and the communication device 5 including the high-frequency module 1 according to the present embodiment. Figure 1 is the circuit structure diagram of the high-frequency module 1 and the communication device 5 according to the embodiment.

[0030] [1.1.1 Circuit Structure of Communication Device 5]

[0031] As shown Figure 1 in FIG. 1, the communication device 5 according to this embodiment includes a high-frequency module 1, an antenna 2, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0032] The high-frequency module 1 transmits high-frequency signals between the antenna 2 and the RFIC 3. The internal structure of the high-frequency module 1 will be described later.

[0033] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1, receives high-frequency signals from the outside, and outputs them to the high-frequency module 1.

[0034] The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 processes the high-frequency reception signal input via the reception path of the high-frequency module 1 through down-conversion and the like, and outputs the reception signal generated after the signal processing to the BBIC 4. In addition, the RFIC 3 has a control unit that controls the switch circuit, amplifier circuit, etc. included in the high-frequency module 1. In addition, part or all of the functions of the RFIC 3 as a control unit may be constituted outside the RFIC 3, for example, may be constituted in the BBIC 4 or the high-frequency module 1.

[0035] The BBIC 4 is a baseband signal processing circuit that performs signal processing using an intermediate frequency band whose frequency is lower than the frequency of the high-frequency signal transmitted by the high-frequency module 1. As the signal processed by the BBIC 4, for example, an image signal is used to display an image and / or a sound signal is used to make a call through a speaker.

[0036] In addition, in the communication device 5 according to this embodiment, the antenna 2 and the BBIC 4 are not essential structural elements.

[0037] [1.1.2 Circuit Structure of High-Frequency Module 1]

[0038] Next, the circuit structure of the high-frequency module 1 will be described. As shown Figure 1 in FIG. 2, the high-frequency module 1 includes a power amplifier circuit 11, a low-noise amplifier circuit 21, impedance matching circuits (MN) 41 to 44, switch circuits 51 to 55, duplexer circuits 61 and 62, a control circuit 80, an antenna connection terminal 100, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a control terminal 130.

[0039] The antenna connection terminal 100 is connected to the antenna 2 outside the high-frequency module 1.

[0040] The high-frequency input terminals 111 and 112 are input terminals for receiving high-frequency transmission signals from the outside of the high-frequency module 1 respectively. In the present embodiment, the high-frequency input terminals 111 and 112 are connected to the RFIC 3 outside the high-frequency module 1.

[0041] The high-frequency output terminals 121 and 122 are output terminals for providing high-frequency reception signals to the outside of the high-frequency module 1 respectively. In the present embodiment, the high-frequency output terminals 121 and 122 are connected to the RFIC 3 outside the high-frequency module 1.

[0042] The control terminal 130 is a terminal for transmitting control signals. That is to say, the control terminal 130 is a terminal for receiving control signals from the outside of the high-frequency module 1 and / or providing control signals to the outside of the high-frequency module 1. The control signal refers to a signal related to the control of the electronic components included in the high-frequency module 1. Specifically, the control signal is, for example, a digital signal for controlling the power amplifier circuit 11, the low-noise amplifier circuit 21, the switch circuits 51 to 55, or any combination thereof.

[0043] The power amplifier circuit 11 can amplify the transmission signals in frequency bands A and B. The input end of the power amplifier circuit 11 is connected to the high-frequency input terminals 111 and 112 via the switch circuit 52. The output end of the power amplifier circuit 11 is connected to the transmission filter circuits 61T and 62T via the impedance matching circuit 41 and the switch circuit 51.

[0044] In addition, the power amplifier circuit 11 is supplied with power from a power source and is a circuit for obtaining an output signal with an energy larger than the input signal (transmission signal) based on the supplied power. The power amplifier circuit 11 includes an amplifying transistor and may also include an inductor and / or a capacitor, etc.

[0045] In the present embodiment, the power amplifier circuit 11 is a multi-stage amplifier circuit and includes power amplifiers 11A and 11B. The power amplifier 11A corresponds to the output stage of the power amplifier circuit 11. The power amplifier 11A is connected between the power amplifier 11B and the switch circuit 51. Specifically, the input end of the power amplifier 11A is connected to the output end of the power amplifier 11B. The output end of the power amplifier 11A is connected to the impedance matching circuit 41.

[0046] The power amplifier 11B corresponds to the input stage of the power amplifier circuit 11. The power amplifier 11B is connected between the switch circuit 52 and the power amplifier 11A. Specifically, the input end of the power amplifier 11B is connected to the switch circuit 52. The output end of the power amplifier 11B is connected to the input end of the power amplifier 11A.

[0047] In addition, the structure of the power amplifier circuit 11 is not limited to the above structure. For example, the power amplifier circuit 11 can be a single-stage amplifier circuit, a differential amplifier circuit, or a Doherty amplifier circuit.

[0048] The low-noise amplifier circuit 21 can amplify the received signals in frequency bands A and B. The input terminal of the low-noise amplifier circuit 21 is connected to the receive filter circuits 61R and 62R via the impedance matching circuit 42 and the switch circuit 54. The output terminal of the low-noise amplifier circuit 21 is connected to the high-frequency output terminals 121 and 122 via the switch circuit 55.

[0049] The impedance matching circuit 41 is connected to the output terminal of the power amplifier circuit 11 and is connected to the input terminals of the transmit filter circuits 61T and 62T via the switch circuit 51. The impedance matching circuit 41 can achieve impedance matching between the output impedance of the power amplifier circuit 11 and the input impedance of the switch circuit 51.

[0050] The impedance matching circuit 42 is connected to the input terminal of the low-noise amplifier circuit 21 and is connected to the output terminals of the receive filter circuits 61R and 62R via the switch circuit 54. The impedance matching circuit 42 can achieve impedance matching between the output impedance of the switch circuit 54 and the input impedance of the low-noise amplifier circuit 21.

[0051] The impedance matching circuit 43 is connected to the output terminal of the transmit filter circuit 61T and the input terminal of the receive filter circuit 61R and is connected to the antenna connection terminal 100 via the switch circuit 53. The impedance matching circuit 43 can achieve impedance matching between the switch circuit 53 and the duplexer circuit 61.

[0052] The impedance matching circuit 44 is connected to the output terminal of the transmit filter circuit 62T and the input terminal of the receive filter circuit 62R and is connected to the antenna connection terminal 100 via the switch circuit 53. The impedance matching circuit 44 can achieve impedance matching between the switch circuit 53 and the duplexer circuit 62.

[0053] The switch circuit 51 is an example of a first switch circuit and is connected between the output terminal of the power amplifier circuit 11 and the input terminals of the transmit filter circuits 61T and 62T. The switch circuit 51 has terminals 511 to 513. The terminal 511 is connected to the output terminal of the power amplifier circuit 11 via the impedance matching circuit 41. The terminal 512 is connected to the input terminal of the transmit filter circuit 61T. The terminal 513 is connected to the input terminal of the transmit filter circuit 62T.

[0054] In this connection structure, the switch circuit 51 can, for example, connect the terminal 511 to any one of the terminals 512 and 513 based on a control signal from the RFIC 3. That is to say, the switch circuit 51 can switch the connection of the output terminal of the power amplifier circuit 11 between the transmission filter circuits 61T and 62T. The switch circuit 51 is, for example, constituted by a SPDT (Single-Pole Double-Throw) type switch and is sometimes referred to as a band selection switch.

[0055] The switch circuit 52 is an example of a second switch circuit and is connected between the high-frequency input terminals 111 and 112 and the input terminal of the power amplifier circuit 11. The switch circuit 52 has terminals 521 to 523. The terminal 521 is connected to the input terminal of the power amplifier circuit 11. The terminals 522 and 523 are respectively connected to the high-frequency input terminals 111 and 112.

[0056] In this connection structure, the switch circuit 52 can, for example, connect the terminal 521 to any one of the terminals 522 and 523 based on a control signal from the RFIC 3. That is to say, the switch circuit 52 can switch the connection of the input terminal of the power amplifier circuit 11 between the high-frequency input terminals 111 and 112. The switch circuit 52 is, for example, constituted by a SPDT type switch and is sometimes referred to as an input switch.

[0057] The switch circuit 53 is an example of a third switch circuit and is connected between the antenna connection terminal 100 and the duplexer circuits 61 and 62. The switch circuit 53 has terminals 531 to 533. The terminal 531 is connected to the antenna connection terminal 100. The terminal 532 is connected to the output terminal of the transmission filter circuit 61T and the input terminal of the reception filter circuit 61R via the impedance matching circuit 43. The terminal 533 is connected to the output terminal of the transmission filter circuit 62T and the input terminal of the reception filter circuit 62R via the impedance matching circuit 44.

[0058] In this connection structure, the switch circuit 53 can, for example, connect the terminal 531 to one or both of the terminals 532 and 533 based on a control signal from the RFIC 3. That is to say, the switch circuit 53 can switch the connection and non-connection between the antenna connection terminal 100 and the duplexer circuit 61, and can switch the connection and non-connection between the antenna connection terminal 100 and the duplexer circuit 62. The switch circuit 53 is, for example, constituted by a multi-connection type switch and is sometimes referred to as an antenna switch.

[0059] The switching circuit 54 is connected between the input terminal of the low-noise amplifier circuit 21 and the output terminals of the reception filter circuits 61R and 62R. The switching circuit 54 has terminals 541 to 543. The terminal 541 is connected to the input terminal of the low-noise amplifier circuit 21 via the impedance matching circuit 42. The terminal 542 is connected to the output terminal of the reception filter circuit 61R. The terminal 543 is connected to the output terminal of the reception filter circuit 62R.

[0060] In this connection structure, the switching circuit 54 can, for example, connect the terminal 541 to any one of the terminals 542 and 543 based on a control signal from the RFIC 3. That is to say, the switching circuit 54 can switch the connection of the input terminal of the low-noise amplifier circuit 21 between the reception filter circuits 61R and 62R. The switching circuit 54 is constituted by, for example, an SPDT type switch.

[0061] The switching circuit 55 is connected between the high-frequency output terminals 121 and 122 and the output terminal of the low-noise amplifier circuit 21. The switching circuit 55 has terminals 551 to 553. The terminal 551 is connected to the output terminal of the low-noise amplifier circuit 21. The terminals 552 and 553 are connected to the high-frequency output terminals 121 and 122, respectively.

[0062] In this connection structure, the switching circuit 55 can, for example, connect the terminal 551 to any one of the terminals 552 and 553 based on a control signal from the RFIC 3. That is to say, the switching circuit 55 can switch the connection of the output terminal of the low-noise amplifier circuit 21 between the high-frequency output terminals 121 and 122. The switching circuit 55 is constituted by, for example, an SPDT type switch and is sometimes referred to as an output switch.

[0063] The duplexer circuit 61 can pass high-frequency signals in frequency band A. The duplexer circuit 61 transmits the transmission signal and the reception signal in frequency band A in a frequency division duplex (FDD: Frequency Division Duplex) manner. The duplexer circuit 61 includes a transmission filter circuit 61T and a reception filter circuit 61R.

[0064] The transmission filter circuit 61T (A-Tx) has a passband including the uplink operation frequency band of frequency band A. Thus, the transmission filter circuit 61T can pass the transmission signal in frequency band A. The transmission filter circuit 61T is connected between the power amplifier circuit 11 and the antenna connection terminal 100. Specifically, the input terminal of the transmission filter circuit 61T is connected to the output terminal of the power amplifier circuit 11 via the switching circuit 51 and the impedance matching circuit 41. On the other hand, the output terminal of the transmission filter circuit 61T is connected to the antenna connection terminal 100 via the impedance matching circuit 43 and the switching circuit 53.

[0065] The reception filter circuit 61R(A-Rx) has a passband including the downlink operating band of frequency band A. Thus, the reception filter circuit 61R can pass the reception signal of frequency band A. The reception filter circuit 61R is connected between the antenna connection terminal 100 and the low-noise amplifier circuit 21. Specifically, the input terminal of the reception filter circuit 61R is connected to the antenna connection terminal 100 via the impedance matching circuit 43 and the switch circuit 53. On the other hand, the output terminal of the reception filter circuit 61R is connected to the low-noise amplifier circuit 21 via the switch circuit 54 and the impedance matching circuit 42.

[0066] The duplexer circuit 62 can pass the high-frequency signal of frequency band B. The duplexer circuit 62 transmits the transmission signal and the reception signal of frequency band B in the FDD mode. The duplexer circuit 62 includes a transmission filter circuit 62T and a reception filter circuit 62R.

[0067] The transmission filter circuit 62T(B-Tx) has a passband including the uplink operating band of frequency band B. Thus, the transmission filter circuit 62T can pass the transmission signal of frequency band B. The transmission filter circuit 62T is connected between the power amplifier circuit 11 and the antenna connection terminal 100. Specifically, the input terminal of the transmission filter circuit 62T is connected to the output terminal of the power amplifier circuit 11 via the switch circuit 51 and the impedance matching circuit 41. On the other hand, the output terminal of the transmission filter circuit 62T is connected to the antenna connection terminal 100 via the impedance matching circuit 44 and the switch circuit 53.

[0068] The reception filter circuit 62R(B-Rx) has a passband including the downlink operating band of frequency band B. Thus, the reception filter circuit 62R can pass the reception signal of frequency band B. The reception filter circuit 62R is connected between the antenna connection terminal 100 and the low-noise amplifier circuit 21. Specifically, the input terminal of the reception filter circuit 62R is connected to the antenna connection terminal 100 via the impedance matching circuit 44 and the switch circuit 53. On the other hand, the output terminal of the reception filter circuit 62R is connected to the low-noise amplifier circuit 21 via the switch circuit 54 and the impedance matching circuit 42.

[0069] The control circuit 80 is a power amplifier controller that controls the power amplifier circuit 11. The control circuit 80 receives a control signal from the RFIC 3 via the control terminal 130 and outputs a control signal to the power amplifier circuit 11.

[0070] In addition, it may also be that Figure 1 One or more of the circuits shown are not included in the high-frequency module 1. For example, the high-frequency module 1 only needs to have at least the power amplifier circuit 11, and other circuits may not be provided.

[0071] [1.2 Component Configuration of High-Frequency Module 1]

[0072] Next, with reference to Figure 2 and Figure 3 an example of the component configuration of the high-frequency module 1 configured as described above will be specifically described.

[0073] Figure 2 is a top view of the high-frequency module 1 according to the embodiment. Figure 3 is a cross-sectional view of the high-frequency module 1 according to the embodiment. Figure 3 The cross-section of the high-frequency module 1 in Figure 2 is the cross-section at the iii-iii line of

[0074] In addition to the components constituting the circuit shown in Figure 1 the high-frequency module 1 further includes a module substrate 90, a resin member 91, a shielding electrode layer 92, and a plurality of external connection terminals 150. In addition, in Figure 2 the illustration of the resin member 91 and the shielding electrode layer 92 is omitted. And, in Figure 2 and Figure 3 the illustration of the wirings connecting the plurality of components arranged on the module substrate 90 to each other is omitted.

[0075] The module substrate 90 has main surfaces 90a and 90b facing each other. In the present embodiment, the module substrate 90 has a rectangular shape when viewed from above, but the shape of the module substrate 90 is not limited thereto. As the module substrate 90, for example, a low-temperature co-fired ceramic (LTCC) substrate having a laminated structure of a plurality of dielectric layers, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board can be used, but it is not limited to them.

[0076] An integrated circuit 20 and 70, surface mount devices (SMDs) 41d to 44d, a switch circuit 53, and duplexer circuits 61 and 62 are arranged on the main surface 90a. The main surface 90a and the components on the main surface 90a are covered with the resin member 91.

[0077] Integrated circuit 20 includes a low-noise amplifier circuit 21, as well as switch circuits 54 and 55. The integrated circuit 20 is formed, for example, using CMOS (Complementary Metal Oxide Semiconductor), and specifically, it can be manufactured by an SOI (Silicon on Insulator) process. Thereby, the integrated circuit 20 can be manufactured at low cost. In addition, the integrated circuit 20 can also be formed of at least one of gallium arsenide (GaAs), silicon germanium (SiGe), and gallium nitride (GaN). Thereby, a high-quality low-noise amplifier circuit 21 and switch circuits 54 and 55 can be realized.

[0078] Integrated circuit 70 includes a first substrate 71 and a second substrate 72. The second substrate 72 and the first substrate 71 are laminated in this order from the main surface 90a side of the module substrate 90. The details of the integrated circuit 70 are described later. Figures 4 to 6 as described later.

[0079] Impedance matching elements that constitute impedance matching circuits 41 to 44 are respectively formed in SMDs 41d to 44d. In particular, an impedance matching element directly connected to the output terminal of the power amplifier circuit 11 is formed in SMD 41d. As the impedance matching element, for example, an inductor and / or a capacitor can be used, but it is not limited thereto. In addition, the electronic component in which the impedance matching element is formed is not limited to the SMD. For example, an integrated passive device (IPD: Integrated Passive Device) can be used instead of the SMD. In addition, the impedance matching elements that constitute the impedance matching circuits 41 to 44 can also be formed in the module substrate 90.

[0080] The switch circuit 53 is constituted, for example, by a plurality of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) connected in series, etc. The number of stages of the series connection of the MOSFETs is determined according to the required withstand voltage and is not particularly limited.

[0081] Each of the duplexer circuits 61 and 62 in the duplexer circuits can be constituted, for example, by any one of a surface acoustic wave (SAW: Surface Acoustic Wave) filter, a bulk acoustic wave (BAW: Bulk Acoustic Wave) filter, an LC resonance filter, and a dielectric filter, and is not limited to them.

[0082] The resin member 91 covers the main surface 90a and the components on the main surface 90a. The resin member 91 has a function of ensuring the reliability such as the mechanical strength and moisture resistance of the components on the main surface 90a. In addition, the resin member 91 may not be included in the high-frequency module 1.

[0083] The shielding electrode layer 92 is a metal thin film formed, for example, by a sputtering method, and is formed to cover the upper surface and side surfaces of the resin member 91 and the side surfaces of the module substrate 90. The shielding electrode layer 92 is set to a ground potential to suppress external noise from invading the components constituting the high-frequency module 1.

[0084] A plurality of external connection terminals 150 are arranged on the main surface 90b. In addition to the antenna connection terminal 100, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and control terminal 130 shown in Figure 1 , the plurality of external connection terminals 150 also include a ground terminal. Each of the external connection terminals among the plurality of external connection terminals 150 is joined to an input / output terminal and / or a ground terminal, etc. on the main board arranged in the negative z-axis direction of the high-frequency module 1. As the plurality of external connection terminals 150, for example, bump electrodes can be used, but it is not limited thereto.

[0085] In addition, Figure 2 and Figure 3 The component arrangement shown is an example and is not limited thereto. For example, part or all of the plurality of components may be arranged on the main surface 90b of the module substrate 90. In this case, it may also be that the main surface 90b and the components on the main surface 90b are covered with a resin member.

[0086] [1.3 Structure of the integrated circuit 70]

[0087] Next, the structure of the integrated circuit 70 will be described with reference to Figures 4 to 6 .

[0088] Figure 4 and Figure 5 are partial cross-sectional views of the high-frequency module 1 according to the embodiment. Specifically, Figure 4 is an enlarged cross-sectional view of the integrated circuit 70, Figure 5 is an enlarged cross-sectional view of the second substrate 72. In addition, in Figure 4 and Figure 5 , the illustration of the wiring and electrodes is omitted except for a part.

[0089] As shown in Figure 4 , the integrated circuit 70 has a first substrate 71 and a second substrate 72.

[0090] [1.3.1 Structure of the first substrate 71]

[0091] First, the first substrate 71 will be described. At least a part of the first substrate 71 is made of a first semiconductor material. Here, silicon (Si) is used as the first semiconductor material. In addition, the first semiconductor material is not limited to silicon. For example, as the first semiconductor material, a material containing any one of gallium arsenide, aluminum arsenide (AlAs), indium arsenide (InAs), indium phosphide (InP), gallium phosphide (GaP), indium antimonide (InSb), gallium nitride, indium nitride (InN), aluminum nitride (AlN), silicon, germanium (Ge), silicon carbide (SiC), and gallium(III) oxide (Ga2O3) as the main component, or a material containing a multi-component mixed crystal material composed of a plurality of these materials as the main component can be used, and they are not limited thereto.

[0092] The switching circuits 51 and 52 and the control circuit 80 are formed on the first substrate 71. In addition, the electrical circuits formed on the first substrate 71 are not limited to the switching circuits 51 and 52 and the control circuit 80. For example, only one or several of the switching circuits 51 and 52 and the control circuit 80 may be formed on the first substrate 71. Alternatively, a control circuit (not shown) that controls the switching circuit 51 and / or 52 may be formed on the first substrate 71.

[0093] The first substrate 71 is a plate-like member including a silicon substrate 711, a silicon dioxide (SiO2) layer 712, a silicon layer 713, a silicon dioxide layer 714, and a silicon nitride (SiN) layer 715. The silicon dioxide layer 712, the silicon layer 713, the silicon dioxide layer 714, and the silicon nitride layer 715 are laminated on the silicon substrate 711 in this order.

[0094] The silicon substrate 711 is made of, for example, a silicon single crystal and is used as a support substrate.

[0095] The silicon dioxide layer 712 is disposed on the silicon substrate 711 and is used as an insulating layer.

[0096] The silicon layer 713 is disposed on the silicon dioxide layer 712 and is used as a device layer. In Figure 4 In the cross section, a plurality of circuit elements 7130 constituting the control circuit 80 are formed in the silicon layer 713.

[0097] The silicon dioxide layer 714 is disposed on the silicon layer 713 and is used as a wiring formation layer. Wires for connecting the control circuit 80 and the switching circuits 51 and 52 formed in the silicon layer 713 to the electrodes 716 formed on the surface of the silicon nitride layer 715 are formed in the silicon dioxide layer 714. The wiring includes a plurality of wiring layers (not shown) and a plurality of via electrodes 7140 that connect between the plurality of wiring layers. The plurality of wiring layers and the plurality of via electrodes 7140 are made of, for example, copper or aluminum.

[0098] The silicon nitride layer 715 is disposed on the silicon dioxide layer 714 and is used as a passivation layer. Electrodes 716 are formed on a part of the surface of the silicon nitride layer 715 as a rewiring layer.

[0099] The electrodes 716 are joined to electrodes (not shown) disposed on the module substrate 90 via the electrodes 717. The surface of the electrodes 716 is insulated and coated with a resin layer 718.

[0100] The plurality of electrodes 717 are an example of the first electrodes and are disposed on the surface of the first substrate 71 facing the second substrate 72. The plurality of electrodes 717 are respectively electrodes protruding from the first substrate 71 toward the main surface 90a of the module substrate 90, and their tips are joined to the main surface 90a. The plurality of electrodes 717 each have a columnar conductor 717a and a bump electrode 717b. The bump electrodes 717b are joined to electrodes (not shown) disposed on the main surface 90a of the module substrate 90.

[0101] In addition, the first substrate 71 is not limited to Figure 4 the structure. For example, the first substrate 71 may not include one or several layers among the plurality of layers on the silicon substrate 711.

[0102] [1.3.2 Structure of the second substrate 72]

[0103] Next, the second substrate 72 will be described. At least a part of the second substrate 72 is made of a second semiconductor material different from the first semiconductor material. As the second semiconductor material, a material having a lower thermal conductivity than the thermal conductivity of the first semiconductor material is used, for example, gallium arsenide is used. In addition, the second semiconductor material is not limited to gallium arsenide. For example, as the second semiconductor material, a material containing any one of gallium arsenide, aluminum arsenide, indium arsenide, indium phosphide, gallium phosphide, indium antimonide, gallium nitride, indium nitride, aluminum nitride, silicon germanium, silicon carbide, gallium(III) oxide, and gallium bismuth (GaBi) as a main component, or a material containing a multi-component mixed crystal material composed of a plurality of these materials as a main component can be used, and they are not limited thereto.

[0104] A power amplifier circuit 11 is formed in the second substrate 72. Specifically, a plurality of circuit elements 721 and electrodes (not shown) for applying a voltage to the plurality of circuit elements 721 or electrodes (not shown) for providing a current are formed in the second substrate 72. The plurality of circuit elements 721 are, for example, heterojunction bipolar transistors (HBTs) obtained by connecting a plurality of unit transistors in parallel, and constitute the power amplifier circuit 11.

[0105] The second substrate 72 includes a semiconductor layer 72a, an epitaxial layer 72b formed on the surface of the semiconductor layer 72a, a plurality of circuit elements 721, and electrodes 722 and 723. The semiconductor layer 72a is made of a second semiconductor material and is bonded to the silicon nitride layer 715 of the first substrate 71. The semiconductor layer 72a is, for example, a GaAs layer. The circuit element 721 has a collector layer 721C, a base layer 721B, and an emitter layer 721E. The collector layer 721C, the base layer 721B, and the emitter layer 721E are stacked on the epitaxial layer 72b in this order. That is, in the circuit element 721, the collector layer 721C, the base layer 721B, and the emitter layer 721E are stacked in this order from the side of the first substrate 71.

[0106] As an example, the collector layer 721C is made of n-type gallium arsenide, the base layer 721B is made of p-type gallium arsenide, and the emitter layer 721E is made of n-type indium gallium phosphide (InGaP). The emitter layer 721E is bonded to the electrode 723 via the electrode 722 formed on the surface of the second substrate 72. The electrode 723 is bonded to the main surface 90a of the module substrate 90 via the electrode 724.

[0107] The electrode 724 is an example of the second electrode and is disposed on the surface of the second substrate 72 opposite to the surface facing the first substrate 71. The electrode 724 protrudes from the second substrate 72 toward the main surface 90a of the module substrate 90, and its tip is bonded to the main surface 90a. The electrode 724 functions as a heat dissipation path for the heat generated in the power amplifier circuit 11. The electrode 724 has a columnar conductor 724a and a bump electrode 724b. The bump electrode 724b is bonded to an electrode (not shown) disposed on the main surface 90a of the module substrate 90.

[0108] In addition, the second substrate 72 is not limited to Figure 4 and Figure 5 the structure of.

[0109] [1.3.3 Planar configuration of the first substrate 71, the second substrate 72, and the SMD 41d]

[0110] Next, with reference to Figure 6 the planar configuration of the first substrate 71, the second substrate 72, and the SMD 41d in a top view will be described. Figure 6 is a partial top view of the high-frequency module 1 according to the embodiment. In addition, in Figure 6 the integrated circuit 70 is seen through, and the dotted lines indicate the outlines of the circuits and electrodes in the first substrate 71 and the second substrate 72. In addition, in Figure 6 the illustration of the wirings and electrodes is omitted except for a part.

[0111] The first substrate 71 has a rectangular shape formed by four sides 71s1 to 71s4. The sides 71s1 and 71s2 are examples of a first side and a second side, respectively, facing each other. In addition, the sides 71s3 and 71s4 also face each other.

[0112] The second substrate 72 is smaller than the first substrate 71 and has a rectangular shape formed by four sides 72s1 to 72s4. The sides 72s1 and 72s2 face each other. In addition, the sides 72s3 and 72s4 also face each other.

[0113] The second substrate 72 is closer to the side 71s1 of the first substrate 71 than to the side 71s2. That is, the distance d1 between the second substrate 72 and the side 71s1 is shorter than the distance d2 between the second substrate 72 and the side 71s2. In addition, the distance between an object and a side represents the shortest distance between the object and the side.

[0114] The SMD 41d is closer to the side 71s1 of the first substrate 71 than to the side 71s2. That is, the distance d3 between the SMD 41d and the side 71s1 is shorter than the distance d4 between the SMD 41d and the side 71s2.

[0115] A plurality of electrodes 717 are arranged along the outer edge of the first substrate 71. However, the plurality of electrodes 717 are not arranged between the side 71s1 of the first substrate 71 and the second substrate 72. The switching circuits 51 and 52 and the control circuit 80 are also not arranged between the side 71s1 of the first substrate 71 and the second substrate 72. The switching circuits 51 and 52 and the control circuit 80 formed on the first substrate 71 do not overlap with the second substrate 72.

[0116] The plurality of electrodes 717 are arranged along the outer edge of the first substrate 71. One of the plurality of electrodes 717 is connected to the SMD 41d via a wiring pattern 90p1 formed on the module substrate 90. At this time, the electrode 717 connected to the SMD 41d is arranged along the side 71s1. That is, the electrode 717 connected to the SMD 41d is closer to the side 71s1 among the four sides 71s1 to 71s4 than to the sides 71s2 to 71s4.

[0117] A plurality of electrodes 724 are arranged along the outer edge of the second substrate 72 and are arranged at positions overlapping with the power amplifier circuit 11. One of the plurality of electrodes 724 is connected to the SMD 41d via a wiring pattern 90p2 formed on the module substrate 90. At this time, the electrode 724 among the plurality of electrodes 724 connected to the SMD 41d is closer to the SMD 41d than the other electrodes 724.

[0118] In addition, Figures 2 to 6The shapes and arrangements of the first substrate 71 and the second substrate 72 shown are illustrative and not limited thereto. For example, the shapes of the first substrate 71 and the second substrate 72 may not be rectangular either.

[0119] [1.4 Effects, etc.]

[0120] As described above, the high-frequency module 1 according to the present embodiment includes: a module substrate 90 having a main surface 90a; an integrated circuit 70 disposed on the main surface 90a and forming a power amplifier circuit 11; and an SMD 41d disposed on the main surface 90a and forming a circuit element directly connected to the power amplifier circuit 11. The integrated circuit 70 includes: a first substrate 71 at least a part of which is made of a first semiconductor material; and a second substrate 72 at least a part of which is made of a second semiconductor material different from the first semiconductor material. The power amplifier circuit 11 is formed on the second substrate 72. The first substrate 71 has sides 71s1 and 71s2 facing each other in a plan view. In the plan view, the SMD 41d is closer to the side 71s1 than to the side 71s2. In the plan view, the second substrate 72 is smaller than the first substrate 71, and the second substrate 72 overlaps the first substrate 71 at a position closer to the side 71s1 than to the side 71s2.

[0121] Accordingly, the second substrate 72 is disposed close to the side 71s1, so that the wiring connecting the power amplifier circuit 11 formed on the second substrate 72 and the circuit element formed on the SMD 41d can be shortened. Therefore, the wiring loss and the mismatch loss caused by the parasitic capacitance of the wiring can be reduced, and the electrical characteristics (such as the transmission power efficiency, etc.) of the high-frequency module 1 can be improved.

[0122] Further, for example, in the high-frequency module 1 according to the present embodiment, an electrical circuit may be formed on the first substrate 71.

[0123] Accordingly, in the plan view, the second substrate 72 on which the power amplifier circuit 11 is formed overlaps the first substrate 71 on which the electrical circuit is formed, so that the integrated circuit 70 can contribute to the miniaturization of the high-frequency module 1.

[0124] Further, for example, in the high-frequency module 1 according to the present embodiment, in the plan view, the electrical circuit may not be disposed between the second substrate 72 and the side 71s1 of the first substrate 71.

[0125] Accordingly, the second substrate 72 can be disposed closer to the side 71s1, and the wiring connecting the power amplifier circuit 11 formed on the second substrate 72 and the circuit element formed on the SMD 41d can be further shortened.

[0126] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that the electrical circuit includes at least one of a control circuit 80 that controls the power amplifier circuit 11, a switch circuit 51 connected to the output end of the power amplifier circuit 11, and a switch circuit 52 connected to the input end of the power amplifier circuit 11.

[0127] Accordingly, at least one of the control circuit 80 and the switch circuits 51 and 52 connected to the power amplifier circuit 11 formed on the second substrate 72 is formed on the first substrate 71, so that the wiring length between the power amplifier circuit 11 and at least one of the control circuit 80 and the switch circuits 51 and 52 can be shortened. Therefore, the influence of digital noise caused by the control signal can be reduced, and the wiring loss and the mismatch loss caused by the parasitic capacitance of the wiring can be reduced.

[0128] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that, in a plan view, the electrical circuit does not overlap with the second substrate 72.

[0129] Accordingly, the thermal influence of the second substrate 72 on the electrical circuit can be reduced, and the characteristic deterioration of the electrical circuit caused by heat can be suppressed.

[0130] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that the first substrate 71 has an electrode 717 disposed on the surface opposite to the second substrate 72.

[0131] Accordingly, the heat generated in the power amplifier circuit 11 in the second substrate 72 can be discharged to the module substrate 90 via the first substrate 71 and the electrode 717, and the characteristic deterioration of the power amplifier circuit 11 caused by heat can be suppressed.

[0132] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that a plurality of electrodes 717 are provided along the outer edge of the first substrate 71, and the plurality of electrodes 717 are not disposed between the second substrate 72 and the edge 71s1 of the first substrate 71.

[0133] Accordingly, the second substrate 72 can be disposed closer to the edge 71s1, and the presence of the electrode 717 between the second substrate 72 and the SMD 41d can be avoided. Therefore, the following situation can be suppressed: the wiring connecting the power amplifier circuit 11 formed on the second substrate 72 and the circuit element formed on the SMD 41d becomes long in order to avoid the electrode 717.

[0134] For another example, in the high-frequency module 1 according to the present embodiment, it is also possible that the electrode 717 among the plurality of electrodes 717 connected to the SMD 41d is disposed along the edge 71s1.

[0135] Accordingly, the electrode 717 connected to the SMD 41d can be disposed close to the SMD 41d, and the wiring connecting the SMD 41d and the electrode 717 can be shortened.

[0136] Further, for example, in the high-frequency module 1 according to the present embodiment, the second substrate 72 may have an electrode 724 disposed on a surface opposite to the surface facing the first substrate 71.

[0137] Accordingly, the second substrate 72 can discharge heat to the module substrate 90 from the surface on the opposite side of the first substrate 71 via the electrode 724, and the heat dissipation performance of the integrated circuit 70 can be improved.

[0138] Further, for example, in the high-frequency module 1 according to the present embodiment, the second substrate 72 may have a plurality of electrodes 724, and the electrode 724 connected to the SMD 41d among the plurality of electrodes 724 is disposed closer to the SMD 41d than the other electrodes 724.

[0139] Accordingly, the electrode 724 connected to the SMD 41d can be disposed close to the SMD 41d, and the wiring connecting the SMD 41d and the electrode 724 can be shortened.

[0140] Further, for example, in the high-frequency module 1 according to the present embodiment, the circuit element directly connected to the power amplifier circuit 11 may be an impedance matching element. Further, for example, in the high-frequency module 1 according to the present embodiment, the impedance matching element may be an inductor or a capacitor.

[0141] Accordingly, the impedance matching element constituting the impedance matching circuit 41 directly connected to the output terminal of the power amplifier circuit 11 can be formed in the SMD 41d. Thus, the wiring length between the power amplifier circuit 11 and the impedance matching circuit 41 can be shortened, and the wiring loss and the mismatch loss caused by the parasitic capacitance of the wiring can be reduced.

[0142] Further, for example, in the high-frequency module 1 according to the present embodiment, the power amplifier circuit 11 may include a circuit element 721 having a collector layer 721C, a base layer 721B, and an emitter layer 721E, and the collector layer 721C, the base layer 721B, and the emitter layer 721E are laminated in this order from the first substrate 71 side.

[0143] Accordingly, the wirings respectively connected to the collector layer 721C, the base layer 721B, and the emitter layer 721E can be simplified in the manufacturing process. In addition, when viewed from above, the area of the collector layer 721C is larger than the areas of the base layer 721B and the emitter layer 721E respectively. Therefore, by bonding the collector layer 721C to the first substrate 71, the bonding area can be increased compared with the case of bonding the base layer 721B or the emitter layer 721E to the first substrate 71. As a result, the bonding between the first substrate 71 and the second substrate 72 can be strengthened to suppress the peeling of the second substrate 72 from the first substrate 71.

[0144] In addition, for example, in the high-frequency module 1 according to the present embodiment, it may also be that the thermal conductivity of the first semiconductor material is higher than that of the second semiconductor material.

[0145] Accordingly, the heat generated in the power amplifier circuit 11 formed on the second substrate 72 can be discharged to the first substrate 71 made of the first semiconductor material having a higher thermal conductivity than that of the second semiconductor material constituting the second substrate 72, and the heat dissipation of the second substrate 72 can be promoted.

[0146] In addition, for example, in the high-frequency module 1 according to the present embodiment, it may also be that the first semiconductor material is silicon or gallium nitride, and the second semiconductor material is gallium arsenide or silicon germanium.

[0147] Accordingly, the heat generated in the power amplifier circuit 11 formed on the second substrate 72 can be discharged to the first substrate 71 made of silicon or gallium nitride having a higher thermal conductivity than that of gallium arsenide or silicon germanium constituting the second substrate 72, and the heat dissipation of the second substrate 72 can be promoted.

[0148] The communication device 5 according to the present embodiment includes: an RFIC 3 that processes high-frequency signals; and a high-frequency module 1 that transmits high-frequency signals between the RFIC 3 and the antenna 2.

[0149] Accordingly, in the communication device 5, the same effects as those of the high-frequency module 1 can be achieved.

[0150] (Other Embodiments)

[0151] As described above, the high-frequency module and the communication device according to the present invention have been described based on the embodiments. However, the high-frequency module and the communication device according to the present invention are not limited to the above embodiments. Other embodiments achieved by combining any of the structural elements in the above embodiments, modification examples obtained by making various modifications that those skilled in the art can think of within the scope of not departing from the gist of the present invention to the above embodiments, and various devices incorporating the above high-frequency module are also included in the present invention.

[0152] For example, in the above-described embodiment, the high-frequency module 1 supports frequency bands for FDD, but is not limited thereto. For example, the high-frequency module 1 may also support frequency bands for time-division duplex (TDD: Time Division Duplex), or may support both frequency bands for FDD and TDD. In this case, the high-frequency module 1 only needs to include a filter circuit having a passband including a frequency band for TDD and a switch circuit for switching between transmission and reception.

[0153] In addition, in the above-described embodiment, the number of the second substrates included in the integrated circuit is one, but is not limited thereto. The number of the second substrates included in the integrated circuit may also be two or more.

[0154] Industrial Applicability

[0155] The present invention, as a high-frequency module disposed at the front end, can be widely used in communication devices such as mobile phones.

[0156] Description of Reference Numerals

[0157] 1: High-frequency module; 2: Antenna; 3: RFIC; 4: BBIC; 5: Communication device; 11: Power amplifier circuit; 11A, 11B: Power amplifier; 20, 70: Integrated circuit; 21: Low-noise amplifier circuit; 41, 42, 43, 44: Impedance matching circuit; 41d, 42d, 43d, 44d: SMD; 51, 52, 53, 54, 55: Switch circuit; 61, 62: Duplexer circuit; 61R, 62R: Receive filter circuit; 61T, 62T: Transmit filter circuit; 71: First substrate; 71s1, 71s2, 71s3, 71s4, 72s1, 72s2, 72s3, 72s4: Side; 72: Second substrate; 72a: Semiconductor layer; 72b: Epitaxial layer; 80: Control circuit; 90: Module substrate; 90a, 90b: Main surface; 90p1, 90p2: Wiring pattern; 91: Resin member; 92: Shield electrode layer; 100: Antenna connection terminal; 111, 112: High-frequency input terminal; 121, 122: High-frequency output terminal; 130: Control terminal; 150: External connection terminal; 711: Silicon substrate; 712, 714: Silicon dioxide layer; 713: Silicon layer; 715: Silicon nitride layer; 716, 717, 722, 723, 724: Electrode; 717a, 724a: Columnar conductor; 717b, 724b: Bump electrode; 718: Resin layer; 721, 7130: Circuit element; 721B: Base layer; 721C: Collector layer; 721E: Emitter layer; 7140: Through-hole electrode.

Claims

1. A high-frequency module, comprising: A module substrate having a main surface; An integrated circuit disposed on the main surface and forming a power amplifier circuit; and An electronic component disposed on the main surface and forming a circuit element directly connected to the power amplifier circuit, Among them, The integrated circuit includes: A first substrate, at least a part of the first substrate being made of a first semiconductor material; and A second substrate, at least a part of the second substrate being made of a second semiconductor material different from the first semiconductor material, and the power amplifier circuit is formed on the second substrate, The first substrate has a first side and a second side facing each other in a plan view, In the plan view, the electronic component is closer to the first side than to the second side, In the plan view, the second substrate is smaller than the first substrate, and the second substrate overlaps the first substrate at a position closer to the first side than to the second side.

2. The high-frequency module according to claim 1, wherein An electrical circuit is formed on the first substrate.

3. The high-frequency module according to claim 2, wherein In the plan view, the electrical circuit is not disposed between the second substrate and the first side.

4. The high-frequency module according to claim 2 or 3, wherein The electrical circuit includes at least one of a control circuit for controlling the power amplifier circuit, a first switching circuit connected to an output terminal of the power amplifier circuit, and a second switching circuit connected to an input terminal of the power amplifier circuit.

5. The high-frequency module according to any one of claims 2 to 4, wherein In the plan view, the electrical circuit does not overlap with the power amplifier circuit.

6. The high-frequency module according to any one of claims 1 to 5, wherein The first substrate has a first electrode disposed on a surface opposite to the second substrate.

7. The high-frequency module according to claim 6, wherein The first substrate has a plurality of first electrodes including the first electrode along an outer edge of the first substrate, The plurality of first electrodes are not disposed between the second substrate and the first side.

8. The high-frequency module according to claim 7, wherein The first electrode connected to the electronic component among the plurality of first electrodes is disposed along the first side.

9. The high-frequency module according to any one of claims 1 to 8, wherein The second substrate has a second electrode disposed on a surface opposite to a surface opposite to the first substrate.

10. The high-frequency module according to claim 9, wherein The second substrate has a plurality of second electrodes including the second electrode, The second electrode connected to the electronic component among the plurality of second electrodes is disposed closer to the electronic component than the other second electrodes.

11. The high-frequency module according to any one of claims 1 to 10, wherein The circuit element is an impedance matching element.

12. The high-frequency module according to claim 11, wherein The impedance matching element is an inductor or a capacitor.

13. The high-frequency module according to any one of claims 1 to 12, wherein The power amplifier circuit includes a circuit element having a collector layer, a base layer, and an emitter layer. The collector layer, the base layer, and the emitter layer are stacked in this order starting from the first substrate side.

14. The high-frequency module according to any one of claims 1 to 13, wherein The thermal conductivity of the first semiconductor material is higher than that of the second semiconductor material.

15. The high-frequency module according to any one of claims 1 to 14, wherein The first semiconductor material is silicon or gallium nitride, The second semiconductor material is gallium arsenide or silicon germanium.

16. A communication device, comprising: A signal processing circuit that processes high-frequency signals; and The high-frequency module according to any one of claims 1 to 15, which transmits the high-frequency signal between the signal processing circuit and the antenna.

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