A microwave passive device with reconfigurable functions and performance

Abstract

The present invention relates to a microwave passive device with reconfigurable functions and performance, belonging to the field of reconfigurable circuit technology. It comprises three layers of sequentially connected microstrip structure layers, dielectric layers and metal ground planes; two E-type microstrip patches, twelve microstrip lines, six PIN diodes, one varactor diode and four ports are centrally symmetrically arranged on the microstrip structure layer, which respectively constitute a microwave-tunable microstrip patch coupled antenna, a microwave-tunable cross-coupled microstrip bandpass filter and a microwave-tunable directional coupler. By adjusting the capacitance of the varactor diode, the frequency adjustment of the antenna, the frequency adjustment of the filter and the coupling degree adjustment of the coupler are achieved, and the performance of the microwave passive device can be reconfigured. This microwave passive device with reconfigurable functions and performance has a simple structure, a high structural reuse rate, a wide range of applications, and a high degree of integration. Functions can be quickly switched, performance can be quickly adjusted, and independent operation can be achieved without affecting each other.

Description

Technical Field

[0001] The present invention belongs to the technical field of reconfigurable circuits, and in particular relates to a microwave passive device with reconfigurable functions and performance. Technical Background

[0002] With the rapid development of wireless communication technology, various reconfigurable microwave devices have emerged. However, the research on reconfigurable microwave devices is currently mainly focused on performance reconstruction or function reconstruction. Generally speaking, in the field of reconfigurable devices, some scholars are studying function reconfigurable devices, and some scholars are studying frequency reconfigurable devices. However, there are three main problems with existing microwave devices: (1) Single function, lack of research on both function reconfiguration and performance reconfiguration, and no research on microwave devices that can reconfigure both function and performance at the same time; (2) Low reuse rate, existing reconfigurable microwave devices often cannot achieve high reuse of microwave structures; (3) Function switching speed is not fast, reconstruction adjustment is slow and performance is relatively poor. Due to the mutual influence between functions, good functional indicators are often not obtained. Summary of the Invention

[0003] In order to simultaneously realize functional reconfiguration between different microwave devices and performance reconfiguration of functionally reconfigurable microwave devices, the present invention provides a microwave passive device with reconfigurable functions and performance.

[0004] A microwave passive device with reconfigurable functions and adjustable performance comprises three layers of sequentially connected microstrip structure layers, dielectric layers and metal grounding plates.

[0005] Two E-type microstrip patches, twelve microstrip lines, six PIN diodes, one varactor diode and four ports are symmetrically arranged on the microstrip structure layer, respectively constituting a microwave-tunable microstrip patch coupled antenna, a microwave-tunable cross-coupled microstrip bandpass filter and a microwave-tunable directional coupler;

[0006] The two E-type microstrip patches are respectively a first E-type microstrip patch 6 and a second E-type microstrip patch 7 with the same structure. The first E-type microstrip patch 6 is composed of three pairs of parallel microstrip lines and one vertical microstrip line. The three pairs of parallel microstrip lines are respectively a pair of middle microstrip lines, a pair of upper microstrip lines and a pair of lower microstrip lines.

[0007] The first E-type microstrip patch 6 and the second E-type microstrip patch 7 are matched in a tooth shape; a ninth microstrip line 9 is provided between one side of a pair of middle microstrip lines of the first E-type microstrip patch 6 and one side of a pair of middle microstrip lines of the second E-type microstrip patch 7; an eighth microstrip line 8 is provided between the inner side of a pair of upper microstrip lines of the first E-type microstrip patch 6 and the other side of a pair of middle microstrip lines of the adjacent second E-type microstrip patch 7; a tenth microstrip line 10 is provided between the other side of a pair of middle microstrip lines of the first E-type microstrip patch 6 and the pair of lower microstrip lines of the adjacent second E-type microstrip patch 7;

[0008] The middle portion of the outer side of the vertical microstrip line of the first E-type microstrip patch 6 is connected to one end of the L-shaped sixth microstrip line 5. The other end of the L-shaped sixth microstrip line 5 is connected to one end of the fifth microstrip line 3 via the varactor diode 4. The other end of the fifth microstrip line 3 is connected to one end of the first microstrip line 1 via the first PIN diode 2. The other end of the first microstrip line 1 is a first port 22. The first port 22 is located at the edge of the microstrip structure layer.

[0009] The middle portion of the sixth microstrip line 5 is connected to one end of the eleventh microstrip line 15 via the second PIN diode 14. The other end of the eleventh microstrip line 15 is connected to one end of the second microstrip line 17 via the third PIN diode 16. One end of the second microstrip line 17 is a second port 23. The second port 23 is located at the edge of the microstrip structure layer.

[0010] The middle portion of the outer side of the vertical microstrip line of the second E-type microstrip patch 7 is connected to one end of the L-shaped seventh microstrip line 11, and the other end of the seventh microstrip line 11 is connected to one end of the fourth microstrip line 13 through the sixth PIN diode 12. The other end of the fourth microstrip line 13 is a fourth port 25; the fourth port 25 is located at the edge of the microstrip structure layer;

[0011] The middle portion of the seventh microstrip line 11 is connected to one end of the twelfth microstrip line 20 via the fifth PIN diode 21. The other end of the twelfth microstrip line 20 is connected to one end of the third microstrip line 18 via the fourth PIN diode 19. The other end of the third microstrip line 18 is a third port 24. The third port 24 is located at the edge of the microstrip structure layer.

[0012] When the first port 22, the first microstrip line 1, the first PIN diode 2, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the first E-type microstrip patch 6, the eighth microstrip line 8, the ninth microstrip line 9, the tenth microstrip line 10, the second E-type microstrip patch 7, and the seventh microstrip line 11 are connected in sequence, and the first PIN diode 2 is turned on, a microwave tunable microstrip patch coupled antenna is formed;

[0013] When the first port 22, the first microstrip line 1, the first PIN diode 2, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the first E-type microstrip patch 6, the eighth microstrip line 8, the ninth microstrip line 9, the tenth microstrip line 10, the second E-type microstrip patch 7, the seventh microstrip line 11, the sixth PIN diode 12, the fourth microstrip line 13, and the fourth port 25 are connected in sequence, and the first PIN diode 2 and the sixth PIN diode 12 are turned on, a microwave tunable cross-coupled microstrip bandpass filter is formed;

[0014] When the first port 22, the first microstrip line 1, the first PIN diode 2, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the second PIN diode 14, the eleventh microstrip line 15, the third PIN diode 16, the second microstrip line 17, and the third port 24 are connected in sequence, the first E-type microstrip patch 6 is connected to the sixth microstrip line 5, the third port 24, the third microstrip line 18, the fourth PIN diode 19, the twelfth microstrip line 20, the fifth PIN diode 21, the seventh microstrip line 11, the sixth PIN diode 12, the fourth microstrip line 13, and the fourth port 25 are connected in sequence, the second E-type microstrip patch 7 is connected to the seventh microstrip line 11, and the first PIN diode 2, the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 19, the fifth PIN diode 21, and the sixth PIN diode 12 are all turned on, they together constitute a microwave tunable directional coupler.

[0015] The technical solutions are further defined as follows:

[0016] The material of the microstrip structure layer is copper, the material of the dielectric layer is Rogers 5880, the relative dielectric constant is 2.2, and the dielectric plate thickness is 0.5 mm; the material of the metal ground plate is copper.

[0017] The first PIN diode 2 , the second PIN diode 14 , the third PIN diode 16 , the fourth PIN diode 19 , the fifth PIN diode 21 and the sixth PIN diode 12 are all connected when they are forward biased, and are disconnected when they are reverse biased.

[0018] The first E-type microstrip patch 6 and the second E-type microstrip patch 7 are centrally symmetrical, and together with the eighth microstrip line 8 , the ninth microstrip line 9 , and the tenth microstrip line 10 , form a coupling structure.

[0019] Compared with the prior art, the beneficial technical effects of the present invention are embodied in the following aspects:

[0020] (1) The present invention realizes the functional reconfiguration of three microwave passive components and simultaneously realizes the performance reconstruction based on the functional reconfiguration.

[0021] (2) The present invention is mainly composed of a microstrip line, a PIN diode and a varactor diode. Most of the microstrip lines are shared by the microwave tunable antenna, the microwave tunable filter and the microwave tunable coupler. The first microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the seventh microstrip line, the first PIN diode, the varactor diode, the first E-type microstrip patch and the second E-type microstrip patch can be reused, and the reuse rate exceeds 90%.

[0022] (3) The present invention can adjust the antenna frequency while being functionally reconfigurable. By adjusting the capacitance value of the varactor diode, when the frequency is adjustable, only the capacitance value of the varactor diode needs to be adjusted, without changing the state of other PIN diodes. The present invention can adjust the filter frequency while being functionally reconfigurable. By adjusting the capacitance value of the varactor diode, when the frequency is adjustable, only the sixth PIN diode needs to be cut off and the capacitance value of the varactor diode needs to be adjusted. The present invention can adjust the coupling degree of the coupler while being functionally reconfigurable. S 31 Indicates the coupling degree. When the coupling degree is adjustable, only the capacitance value of the varactor diode needs to be adjusted without changing the state of other PIN diodes. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a top view of the present invention.

[0024] Figure 2 It is a functional structural diagram of the antenna of the present invention.

[0025] Figure 3 It is a functional structure diagram of the filter of the present invention.

[0026] Figure 4 It is a functional structural diagram of the coupler of the present invention.

[0027] Figure 5 This is an S-parameter simulation diagram of the present invention when working as an antenna.

[0028] Figure 6 This is the gain pattern when the capacitance value is 5.4 pF when the present invention works as an antenna.

[0029] Figure 7 This is the gain pattern when the capacitance value is 13.2 pF when the present invention works as an antenna.

[0030] Figure 8 This is the gain pattern when the capacitance value is 6pF when the present invention works as an antenna.

[0031] Figure 9 This is the gain pattern when the capacitance value is 14 pF when the present invention works as an antenna.

[0032] Figure 10 This is a simulation diagram of the S11 parameter when the present invention works in the filter function.

[0033] Figure 11 This is a simulation diagram of the S21 parameter when the present invention works in the filter function.

[0034] Figure 12 This is a simulation diagram of the S11 parameters when the present invention works as a coupler.

[0035] Figure 13 This is a simulation diagram of the S21 parameters when the present invention works as a coupler.

[0036] Figure 14 This is a simulation diagram of the S31 parameters when the present invention works as a coupler.

[0037] Figure 15 This is a simulation diagram of the S41 parameters when the present invention works as a coupler.

[0038] Figure 1-4 Sequence number: first microstrip line 1, first PIN diode 2, fifth microstrip line 3, varactor diode 4, sixth microstrip line 5, first E-type microstrip patch 6, second E-type microstrip patch 7, eighth microstrip line 8, ninth microstrip line 9, tenth microstrip line 10, seventh microstrip line 11, sixth PIN diode 12, fourth microstrip line 13, second PIN diode 14, eleventh microstrip line 15, third PIN diode 16, second microstrip line 17, third microstrip line 18, fourth PIN diode 19, twelfth microstrip line 20, fifth PIN diode 21, first port 22, second port 23, third port 24, fourth port 25. DETAILED DESCRIPTION

[0039] The invention will be further described below through embodiments with reference to the accompanying drawings. Example

[0040] See also Figure 1 The figure shows the overall microstrip structure layer of a microwave passive device with reconfigurable functions and adjustable performance of the present invention. The microstrip structure layer is connected to the dielectric layer and the metal ground plate in sequence.

[0041] The material of the microstrip structure layer is copper; the material of the dielectric layer is Rogers 5880, with a relative dielectric constant of 2.2 and a dielectric plate thickness of 0.5 mm; and the material of the metal ground plate is copper.

[0042] Two E-type microstrip patches, twelve microstrip lines, six PIN diodes, one varactor diode and four ports are symmetrically arranged on the microstrip structure layer, which respectively constitute a microwave tunable microstrip patch coupled antenna, a microwave tunable cross-coupled microstrip bandpass filter and a microwave tunable directional coupler.

[0043] The two E-type microstrip patches are a first E-type microstrip patch 6 and a second E-type microstrip patch 7 with the same structure. The first E-type microstrip patch 6 is composed of three pairs of parallel microstrip lines and one vertical microstrip line. The three pairs of parallel microstrip lines are a pair of middle microstrip lines, a pair of upper microstrip lines and a pair of lower microstrip lines. The spacing between each pair of parallel microstrip lines is 0.9 mm.

[0044] The first E-type microstrip patch 6 and the second E-type microstrip patch 7 are matched in a tooth shape; a ninth microstrip line 9 is provided between one side of a pair of middle microstrip lines of the first E-type microstrip patch 6 and one side of a pair of middle microstrip lines of the second E-type microstrip patch 7; an eighth microstrip line 8 is provided between the inner side of a pair of upper microstrip lines of the first E-type microstrip patch 6 and the other side of a pair of middle microstrip lines of the adjacent second E-type microstrip patch 7; a tenth microstrip line 10 is provided between the other side of a pair of middle microstrip lines of the first E-type microstrip patch 6 and a pair of lower microstrip lines of the adjacent second E-type microstrip patch 7.

[0045] The first and second E-type microstrip patches 6 and 7, which are centrally symmetrical, form a coupling structure together with the eighth microstrip line 8, the ninth microstrip line 9, and the tenth microstrip line 10. The width of the eighth microstrip line 8, the ninth microstrip line 9, and the tenth microstrip line 10 is 0.9 mm.

[0046] The middle portion of the vertical microstrip line of the first E-type microstrip patch 6 is connected to one end of the L-shaped sixth microstrip line 5. The other end of the L-shaped sixth microstrip line 5 is connected to one end of the fifth microstrip line 3 via a varactor diode 4. The other end of the fifth microstrip line 3 is connected to one end of the first microstrip line 1 via a first PIN diode 2. The other end of the first microstrip line 1 is a first port 22 located at the edge of the microstrip structure layer. The first microstrip line 1 is 1.52 mm wide and 21.88 mm long. The fifth and sixth microstrip lines 3 and 5 are both 1.2 mm wide. The operating range of the varactor diode 4 is 1.8 pF to 17.5 pF.

[0047] The middle of the sixth microstrip line 5 is connected to one end of the eleventh microstrip line 15 through the second PIN diode 14, and the other end of the eleventh microstrip line 15 is connected to one end of the second microstrip line 17 through the third PIN diode 16. One end of the second microstrip line 17 is the second port 23; the second port 23 is located at the edge of the microstrip structure layer.

[0048] The middle portion of the vertical microstrip line of the second E-type microstrip patch 7 is connected to one end of an L-shaped seventh microstrip line 11. The other end of the seventh microstrip line 11 is connected to one end of a fourth microstrip line 13 via a sixth PIN diode 12. The other end of the fourth microstrip line 13 forms a fourth port 25 located at the edge of the microstrip structure layer. The width of the seventh microstrip line 11 is 1.2 mm.

[0049] The middle part of the seventh microstrip line 11 is connected to one end of the twelfth microstrip line 20 through the fifth PIN diode 21, and the other end of the twelfth microstrip line 20 is connected to one end of the third microstrip line 18 through the fourth PIN diode 19. The other end of the third microstrip line 18 is the third port 24; the third port 24 is located at the edge of the microstrip structure layer.

[0050] The first PIN diode 2 , the second PIN diode 14 , the third PIN diode 16 , the fourth PIN diode 19 , the fifth PIN diode 21 and the sixth PIN diode 12 are all connected when they are forward biased, and are disconnected when they are reverse biased.

[0051] See also Figure 2 When the first port 22, the first microstrip line 1, the first PIN diode 2, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the first E-type microstrip patch 6, the eighth microstrip line 8, the ninth microstrip line 9, the tenth microstrip line 10, the second E-type microstrip patch 7, and the seventh microstrip line 11 are connected in sequence, and the first PIN diode 2 is turned on, a microwave-tunable microstrip patch coupled antenna is formed.

[0052] See also Figure 3 When the first port 22, the first microstrip line 1, the first PIN diode 2, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the first E-type microstrip patch 6, the eighth microstrip line 8, the ninth microstrip line 9, the tenth microstrip line 10, the second E-type microstrip patch 7, the seventh microstrip line 11, the sixth PIN diode 12, the fourth microstrip line 13, and the fourth port 25 are connected in sequence, and the first PIN diode 2 and the sixth PIN diode 12 are turned on, a microwave-tunable cross-coupled microstrip bandpass filter is formed.

[0053] See also Figure 4 When the first port 221, the first microstrip line 1, the first PIN diode 2, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the second PIN diode 14, the eleventh microstrip line 15, the third PIN diode 16, the second microstrip line 17, and the third port 24 are connected in sequence, the first E-type microstrip patch 6 is connected to the sixth microstrip line 5, the third port 24, the third microstrip line 18, the fourth PIN diode 19, the twelfth microstrip line 20, the fifth PIN diode 21, the seventh microstrip line 11, the sixth PIN diode 12, the fourth microstrip line 13, and the fourth port 25 are connected in sequence, and the second E-type microstrip patch 7 is connected to the seventh microstrip line 11, when the first PIN diode 2, the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 19, the fifth PIN diode 21, and the sixth PIN diode 12 are all turned on, they together constitute a microwave tunable directional coupler.

[0054] The working principle of the present invention is described in detail as follows:

[0055] See also Figure 1 By controlling the on-off switching of six PIN diodes, three structural functions are realized, thereby achieving the functional reconfiguration of the microwave tunable antenna, microwave tunable filter, and microwave tunable coupler. By controlling the adjustable capacitance value of the varactor diode, the resonant frequency of the microwave tunable antenna and microwave tunable filter and the coupling degree of the coupler are controlled, thereby achieving the frequency adjustment of the microwave tunable antenna and microwave tunable filter and the coupling degree of the coupler.

[0056] See also Figure 2 When the microwave tunable antenna is working, the first port 22 serves as the input port, the second port 23, the third port 24, and the fourth port 25 are inoperative; the first PIN diode 2 is turned on, and the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 18, the fifth PIN diode 21, and the sixth PIN diode 12 are all turned off. The capacitance is adjusted by the varactor diode 4, see Figure 5 The adjustable resonant frequency of the microwave tunable antenna is 4.31GHz~4.52GHz, and the reflection coefficient S11 of the resonant frequency is greater than 15dB. Figure 6 , the gain of the microwave tunable antenna is greater than 0dB when the capacitance value is 5.4pF. Figure 7 , the gain of the microwave tunable antenna is greater than 0dB when the capacitance value is 13.2pF. Figure 8 , the gain of the microwave tunable antenna is greater than 0dB when the capacitance value is 6pF. Figure 9 , the gain of the microwave tunable antenna is greater than 0dB when the capacitance value is 14pF.

[0057]

[0058] As can be seen from Table 1, when the first port 22 serves as the input port, the second port 23, the third port 24, and the fourth port 25 are all inoperative, and the first PIN diode 2 is turned on, while the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 19, the fifth PIN diode 21, and the sixth PIN diode 12 are all turned off, the antenna function can be reconfigured. When the capacitance value of the varactor diode 4 is 5.4 pF, the resonant frequency is 4.31 GHz. When the capacitance value of the varactor diode 4 is 13.2 pF, the resonant frequency is 4.38 GHz. When the capacitance value of the varactor diode 4 is 6 pF, the resonant frequency is 4.45 GHz. When the capacitance value of the varactor diode 4 is 14 pF, the resonant frequency is 4.52 GHz, thus achieving reconfigurable antenna performance.

[0059] See also Figure 3When the microwave tunable filter is operating, the first port 22 serves as the input port, the fourth port 25 serves as the output port, and the second port 23 and the third port 24 are inoperative. The first PIN diode 2 and the sixth PIN diode 12 are conductive, while the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 18, and the fifth PIN diode 21 are all cut off. The first microstrip line 1, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the first E-type microstrip patch 6, the eighth microstrip line 8, the ninth microstrip line 9, the tenth microstrip line 10, the second E-type microstrip patch 7, the seventh microstrip line 11, and the fourth microstrip line 13 work together. The capacitance is adjusted by the varactor diode 4, see Figure 10 , where the line marked with a circle represents the S11 when the capacitance value is 12.2pF, the line marked with an upper triangle represents the S11 when the capacitance value is 14.7pF, the line marked with a square represents the S11 when the capacitance value is 4.3pF, and the line marked with a lower triangle represents the S11 when the capacitance value is 15.6pF. The S11 parameter value of the filter is less than -10dB, and the center frequency range of the filter is 1.76GHz to 1.86GHz, that is, the adjustable operating frequency range of the filter is 1.76GHz to 1.86GHz. Figure 11 , where the broken line marked with a circle represents the S21 when the capacitance value is 12.2pF, the broken line marked with an upper triangle represents the S21 when the capacitance value is 14.7pF, the broken line marked with a square represents the S21 when the capacitance value is 4.3pF, and the broken line marked with a lower triangle represents the S21 when the capacitance value is 15.6pF. The S21 parameter value of the filter is greater than -3dB within the frequency range.

[0060]

[0061] As can be seen from Table 2, when the first port 22 serves as the input port, the fourth port 25 serves as the output port, the second port 23 and the third port 24 are both inoperative, and the first PIN diode 2 and the sixth PIN diode 12 are both turned on, and the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 19, and the fifth PIN diode 21 are all turned off, the filter function can be reconfigured. When the capacitance value of the varactor diode 4 is 12.2 pF, the filter center frequency is 1.76 GHz. When the capacitance value of the varactor diode 4 is 14.7 pF, the filter center frequency is 1.78 GHz. When the capacitance value of the varactor diode 4 is 4.3 pF, the filter center frequency is 1.81 GHz. When the capacitance value of the varactor diode 4 is 15.6 pF, the filter center frequency is 1.86 GHz, and the filter performance can be reconfigured.

[0062] See also Figure 4When the microwave tunable coupler is working, the first port 22 serves as the input port, the second port 23 serves as the through port, the third port 24 serves as the coupling port, and the fourth port 25 serves as the isolation port. The first PIN diode 2, the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 18, the fifth PIN diode 21, and the sixth PIN diode 12 are all in the on state. The first microstrip line 1, the fifth microstrip line 3, the varactor diode 4, the sixth microstrip line 5, the eleventh microstrip line, the second microstrip line, the third microstrip line 18, the twelfth microstrip line 20, the seventh microstrip line 11, the fourth microstrip line 13, the first E-type microstrip patch 6, the second E-type microstrip patch 7, the eighth microstrip line 8, the ninth microstrip line 9, and the tenth microstrip line 10 work together. The capacitance is adjusted by the varactor diode 4, see Figure 12 , where the line marked with an upper triangle represents the S11 when the capacitance value is 14.8pF, the line marked with a lower triangle represents the S11 when the capacitance value is 15.8pF, the line marked with a circle represents the S11 when the capacitance value is 3.4pF, and the line marked with a square represents the S11 when the capacitance value is 2.6pF. The S11 parameter value of the coupler is less than -10dB. Figure 13 The line marked with an upper triangle represents the S21 when the capacitance value is 14.8pF, the line marked with a lower triangle represents the S21 when the capacitance value is 15.8pF, the line marked with a circle represents the S21 when the capacitance value is 3.4pF, and the line marked with a square represents the S21 when the capacitance value is 2.6pF. The S21 parameter value of the coupler is close to 0dB, which meets the design requirements. Figure 14 , where the line marked with an upper triangle represents the S31 when the capacitance value is 14.8pF, the line marked with a lower triangle represents the S31 when the capacitance value is 15.8pF, the line marked with a circle represents the S31 when the capacitance value is 3.4pF, and the line marked with a square represents the S31 when the capacitance value is 2.6pF. The average value range of the coupler's S31 parameter is -26.53dB to -23.43dB, that is, the adjustable range of the coupling degree is -26.53dB to -23.43dB. Figure 15 The broken line marked with an upper triangle represents the S41 when the capacitance value is 14.8pF, the broken line marked with a lower triangle represents the S41 when the capacitance value is 15.8pF, the broken line marked with a circle represents the S41 when the capacitance value is 3.4pF, and the broken line marked with a square represents the S41 when the capacitance value is 2.6pF. The average value of the S41 parameter of the coupler is less than -10dB.

[0063]

[0064] As can be seen from Table 3, when the first port 22 serves as the input port, the second port 23 serves as the pass-through port, the third port 24 serves as the coupling port, and the fourth port 25 serves as the isolated output port, and the first PIN diode 2, the second PIN diode 14, the third PIN diode 16, the fourth PIN diode 19, the fifth PIN diode 21, and the sixth PIN diode 12 are all turned on, the coupler function can be reconfigured. When the capacitance value of the varactor diode 4 is 12.2 pF, the filter center frequency is 1.76 GHz. When the capacitance value of the varactor diode 4 is 14.7 pF, the filter center frequency is 1.78 GHz. When the capacitance value of the varactor diode 4 is 4.3 pF, the filter center frequency is 1.81 GHz. When the capacitance value of the varactor diode 4 is 15.6 pF, the filter center frequency is 1.86 GHz. Therefore, the coupler performance can be reconfigured.

[0065] It will be easily understood by those skilled in the art that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A microwave passive device with reconfigurable functions and adjustable performance, comprising three sequentially connected layers of a microstrip structure layer, a dielectric layer, and a metal ground plane, characterized in that: Two E-type microstrip patches, twelve microstrip lines, six PIN diodes, one varactor diode and four ports are symmetrically arranged on the microstrip structure layer, respectively constituting a microwave-tunable microstrip patch coupled antenna, a microwave-tunable cross-coupled microstrip bandpass filter and a microwave-tunable directional coupler; The two E-type microstrip patches are respectively a first E-type microstrip patch (6) and a second E-type microstrip patch (7) having the same structure, wherein the first E-type microstrip patch (6) is composed of three pairs of parallel microstrip lines and one vertical microstrip line, wherein the three pairs of parallel microstrip lines are respectively a pair of middle microstrip lines, a pair of upper microstrip lines and a pair of lower microstrip lines; The first E-type microstrip patch (6) and the second E-type microstrip patch (7) are matched in a tooth shape; a ninth microstrip line (9) is provided between one side of a pair of middle microstrip lines of the first E-type microstrip patch (6) and one side of a pair of middle microstrip lines of the second E-type microstrip patch (7); an eighth microstrip line (8) is provided between the inner side of a pair of upper microstrip lines of the first E-type microstrip patch (6) and the other side of a pair of middle microstrip lines of the adjacent second E-type microstrip patch (7); a tenth microstrip line (10) is provided between the other side of a pair of middle microstrip lines of the first E-type microstrip patch (6) and the pair of lower microstrip lines of the adjacent second E-type microstrip patch (7); A first E-type microstrip patch (6) and a second E-type microstrip patch (7) that are centrally symmetrical form a coupling structure together with an eighth microstrip line (8), a ninth microstrip line (9), and a tenth microstrip line (10); The middle portion of the outer side of the vertical microstrip line of the first E-type microstrip patch (6) is connected to one end of the L-shaped sixth microstrip line (5), the other end of the L-shaped sixth microstrip line (5) is connected to one end of the fifth microstrip line (3) via a varactor diode (4), the other end of the fifth microstrip line (3) is connected to one end of the first microstrip line (1) via a first PIN diode (2), and the other end of the first microstrip line (1) is a first port (22); the first port (22) is located at the edge of the microstrip structure layer; The middle portion of the sixth microstrip line (5) is connected to one end of the eleventh microstrip line (15) via a second PIN diode (14), and the other end of the eleventh microstrip line (15) is connected to one end of the second microstrip line (17) via a third PIN diode (16), and one end of the second microstrip line (17) is a second port (23); the second port (23) is located at the edge of the microstrip structure layer; The middle portion of the outer side of the vertical microstrip line of the second E-type microstrip patch (7) is connected to one end of the L-shaped seventh microstrip line (11), the other end of the seventh microstrip line (11) is connected to one end of the fourth microstrip line (13) via the sixth PIN diode (12), and the other end of the fourth microstrip line (13) is a fourth port (25); the fourth port (25) is located at the edge of the microstrip structure layer; The middle portion of the seventh microstrip line (11) is connected to one end of the twelfth microstrip line (20) via a fifth PIN diode (21); the other end of the twelfth microstrip line (20) is connected to one end of the third microstrip line (18) via a fourth PIN diode (19); the other end of the third microstrip line (18) is a third port (24); the third port (24) is located at the edge of the microstrip structure layer; When the first port (22), the first microstrip line (1), the first PIN diode (2), the fifth microstrip line (3), the varactor diode (4), the sixth microstrip line (5), the first E-type microstrip patch (6), the eighth microstrip line (8), the ninth microstrip line (9), the tenth microstrip line (10), the second E-type microstrip patch (7), and the seventh microstrip line (11) are connected in sequence, and when the first PIN diode (2) is turned on, a microwave-tunable microstrip patch coupling antenna is formed; When the first port (22), the first microstrip line (1), the first PIN diode (2), the fifth microstrip line (3), the varactor diode (4), the sixth microstrip line (5), the first E-type microstrip patch (6), the eighth microstrip line (8), the ninth microstrip line (9), the tenth microstrip line (10), the second E-type microstrip patch (7), the seventh microstrip line (11), the sixth PIN diode (12), the fourth microstrip line (13), and the fourth port (25) are connected in sequence, and when the first PIN diode (2) and the sixth PIN diode (12) are turned on, a microwave-tunable cross-coupled microstrip bandpass filter is formed; When the first port (22), the first microstrip line (1), the first PIN diode (2), the fifth microstrip line (3), the varactor diode (4), the sixth microstrip line (5), the second PIN diode (14), the eleventh microstrip line (15), the third PIN diode (16), the second microstrip line (17), and the second port (23) are connected in sequence, the first E-type microstrip patch (6) is connected to the sixth microstrip line (5), the third port (24), the third microstrip line (18), the fourth PIN diode (19), the twelfth microstrip line (20 ), a fifth PIN diode (21), a seventh microstrip line (11), a sixth PIN diode (12), a fourth microstrip line (13), and a fourth port (25) are connected in sequence, a second E-type microstrip patch (7) is connected to the seventh microstrip line (11), and when the first PIN diode (2), the second PIN diode (14), the third PIN diode (16), the fourth PIN diode (19), the fifth PIN diode (21), and the sixth PIN diode (12) are all turned on, they together constitute a microwave tunable directional coupler.

2. The microwave passive device with reconfigurable functions and adjustable performance according to claim 1, characterized in that: The material of the microstrip structure layer is copper, the material of the dielectric layer is Rogers 5880, the relative dielectric constant is 2.2, and the thickness of the dielectric layer is 0.5 mm; the material of the metal ground plate is copper.

3. The microwave passive device with reconfigurable functions and adjustable performance according to claim 1, characterized in that: The first PIN diode (2), the second PIN diode (14), the third PIN diode (16), the fourth PIN diode (19), the fifth PIN diode (21) and the sixth PIN diode (12) are all circuit-conducting when forward biased and circuit-cutting when reverse biased.

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