A semiconductor laser element with a one-dimensional charge density wave layer

Abstract

This invention proposes a semiconductor laser element with a one-dimensional charge density wave layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, with one-dimensional charge density wave layers disposed above and below the upper waveguide layer. This invention can induce a moiré superlattice bandgap, causing inconsistent velocities between spin quasiparticles and charged quasiparticles, resulting in spin-charge separation, reducing the single-electron excitation probability, and improving population inversion in the laser. The one-dimensional system enhances the quantum confinement effect, strengthens the confinement factor of the active layer of the laser element, modulates the optical field and confines charge carriers to the active region, reduces internal absorption loss and carrier absorption loss in the upper confinement layer, and modulates the tunneling barrier height, lowering the valence band order and hole injection barrier, improving hole injection efficiency, achieving continuous oscillation, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and more particularly to a semiconductor laser element having a one-dimensional charge density wave layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers and nitride semiconductor light-emitting diodes (LEDs) differ significantly:

[0004] 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are spontaneously emitted, and the output power of a single light-emitting diode is in the mW range.

[0005] 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes. This results in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect.

[0006] 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon.

[0007] 4) Different principles: Light emission diodes emit light by electrons and holes jumping to quantum wells or pn junctions under the action of external voltage, generating radiative recombination. Lasers, on the other hand, require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) Large internal lattice mismatch and strain lead to strong polarization effect, and strong QCSE quantum confinement Stark effect limits the improvement of laser electro-lasing gain;

[0010] 2) The optical waveguide has high absorption loss. The inherent carbon impurities in the p-type semiconductor will compensate for the acceptor and destroy the p-type. The ionization rate of p-type doping is low. A large number of unionized Mg acceptor impurities will lead to an increase in internal optical loss. In addition, the refractive index dispersion and confinement factor of the laser decrease with increasing wavelength, resulting in a decrease in the mode gain of the laser.

[0011] 3) p-type semiconductors have high Mg acceptor activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility. In addition, the quantum well polarization electric field raises the hole injection barrier and causes hole overflow from the active layer. Hole injection is uneven and inefficient, resulting in severe electron-hole asymmetry and mismatch in the quantum well. Electron leakage and carrier delocalization make hole transport in the quantum well more difficult, and the carrier injection is uneven. This leads to uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency.

[0012] 4) The increased band gap in the valence band of the laser makes it more difficult for holes to transport in the quantum well, resulting in non-uniform carrier injection and non-uniform gain. Summary of the Invention

[0013] To address one of the aforementioned technical problems, the present invention provides a semiconductor laser element having a one-dimensional charge density wave layer.

[0014] This invention provides a semiconductor laser device with a one-dimensional charge density wave layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, wherein a one-dimensional charge density wave layer is disposed between the active layer and the upper waveguide layer, and between the upper waveguide layer and the electron blocking layer.

[0015] Preferably, the one-dimensional charge density wave layer is any two or more combinations of MoTe2, BaSnO3, CsPbIBr2, Cs2AgFeCl6:In, RSe2, and CsAgBiBr6, and the doping element of the one-dimensional charge density wave layer is any one or any combination of Li, Be, Mg, Na, K, Ca, Sr, Fr, Ra, and Zn.

[0016] Preferably, the thickness of the one-dimensional charge density wave layer is 5 nm to 500 nm.

[0017] Preferably, the one-dimensional charge density wave layer is a topological Dirac superlattice structure.

[0018] Preferably, the one-dimensional charge density wave layer is any one of the following binary combination structures of the topological Dirac superlattice: MoTe2 / BaSnO3, MoTe2 / CsPbIBr2, MoTe2 / Cs2AgFeCl6:In, MoTe2 / RSe2, MoTe2 / CsAgBiBr6, BaSnO3 / CsPbIBr2, BaSnO3 / Cs2AgFeCl6:In, BaSnO3 / RSe2, BaSnO3 / CsAgBiBr6, CsPbIBr2 / Cs2AgFeCl6:In, CsPbIBr2 / RSe2, CsPbIBr2 / CsAgBiBr6, Cs2AgFeCl6:In / RSe2, Cs2AgFeCl6:In / CsAgBiBr6, RSe2 / CsAgBiBr6.

[0019] Preferably, the one-dimensional charge density wave layer is any one of the following ternary combined topological Dirac superlattice structures: MoTe2 / BaSnO3 / CsPbIBr2, MoTe2 / BaSnO3 / Cs2AgFeCl6:In, MoTe2 / BaSnO3 / RSe2, MoTe2 / BaSnO3 / CsAgBiBr6, MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In, MoTe2 / CsPbIBr2 / RSe2, MoTe2 / CsPbIBr2 / CsAgBiBr6, MoTe2 / Cs2AgFeCl6:In / RSe2, MoTe2 / Cs2AgFeCl6:In / CsAgBiBr6, MoTe2 / RSe2 / CsAgBiBr6, BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In, BaSnO3 / CsPbIBr2 / RSe2,BaSnO3 / CsPbIBr2 / CsAgBiBr6, BaSnO3 / Cs2AgFeCl6:In / RSe2,BaSnO3 / Cs2AgFeCl6:In / CsAgBiBr6,BaSnO3 / RSe2 / CsAgBiBr6,CsPbIBr2 / Cs2AgFeCl6:In / RSe2, CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6, CsPbIBr2 / RSe2 / CsAgBiBr6, Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

[0020] Preferably, the one-dimensional charge density wave layer is any one of the following quaternary combined topological Dirac superlattice structures: MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In, MoTe2 / BaSnO3 / CsPbIBr2 / RSe2, MoTe2 / BaSnO3 / CsPbIBr2 / CsAgBiBr6, MoTe2 / CsPbIBr2 / Cs2AgFeCl6. l6:In / RSe2,MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6,MoTe2 / Cs2AgFeCl6:In / RSe2 / CsAgB iBr6,BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2,BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6,

[0021] BaSnO3 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0022] CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

[0023] Preferably, the one-dimensional charge density wave layer is any one of the following five-element or six-element combined topological Dirac superlattice structures: MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2.

[0024] MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6,

[0025] MoTe2 / BaSnO3 / CsPbIBr2 / RSe2 / CsAgBiBr6,

[0026] MoTe2 / BaSnO3 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0027] MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0028] BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0029] MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

[0030] Preferably, the lower confining layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ;

[0031] The lower and upper waveguide layers are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm⁻¹. -3 Up to 5E19cm -3 ;

[0032] The electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ;

[0033] The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0034] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 angstroms to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 angstroms to 120 angstroms.

[0035] The beneficial effects of this invention are as follows: By setting a one-dimensional charge density wave layer between the active layer and the upper waveguide layer, and between the upper waveguide layer and the electron blocking layer, this one-dimensional charge density wave layer can induce a moiré superlattice bandgap, causing spin quasiparticles and charged quasiparticles to have inconsistent velocities, resulting in spin-charge separation, reducing the single-electron excitation probability, and improving the population inversion of the laser. At the same time, the one-dimensional system enhances the quantum confinement effect, strengthens the confinement factor of the active layer of the laser element, regulates the optical field and confines the carriers in the active region, reduces the internal absorption loss and carrier absorption loss of the upper confinement layer, and regulates the tunnel barrier height, reduces the valence band order, reduces the hole injection barrier, improves the hole injection efficiency, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element. Attached Figure Description

[0036] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0037] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element with a one-dimensional charge density wave layer according to an embodiment of the present invention.

[0038] Figure label:

[0039] 100. Substrate; 101. Lower confinement layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Electron blocking layer; 106. Upper confinement layer; 107. One-dimensional charge density wave layer. Detailed Implementation

[0040] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0041] like Figure 1 As shown, this embodiment proposes a semiconductor laser device with a one-dimensional charge density wave layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 arranged sequentially from bottom to top. A one-dimensional charge density wave layer 107 is provided between the active layer 103 and the upper waveguide layer 104, and between the upper waveguide layer 104 and the electron blocking layer 105.

[0042] Specifically, in this embodiment, the thickness of the one-dimensional charge density wave layer 107 is 5nm to 500nm, and it can be any two or more combinations of MoTe2, BaSnO3, CsPbIBr2, Cs2AgFeCl6:In, RSe2, and CsAgBiBr6. Furthermore, the doping element of the one-dimensional charge density wave layer 107 is any one or any combination of Li, Be, Mg, Na, K, Ca, Sr, Fr, Ra, and Zn.

[0043] More specifically, in this embodiment, the one-dimensional charge density wave layer 107 is a topological Dirac superlattice structure. A superlattice structure is a material with a high-dimensional spatial topological structure, composed of numerous micrometer-scale microstructures. It possesses a unique geometric spatial structure and many properties, such as high temperature resistance, chemical resistance, impact resistance, and corrosion resistance. Furthermore, it also exhibits high thermal conductivity, high electrical resistivity, and good relative error performance. These properties make the superlattice structure not only high in strength but also highly wear-resistant, allowing it to operate normally in harsh environments such as high temperatures and chemical corrosion. Low-dimensional topological quantum materials are a new type of material with special electronic structures and topological properties. These properties ensure unimpeded electron transport within the material. This special electronic structure is determined by the material's geometry and lattice structure. In low-dimensional topological quantum materials, the movement and transport directions of electrons are highly ordered, ensuring efficient electron transport within the material.

[0044] In this embodiment, the one-dimensional charge density wave layer 107 employs a topological Dirac superlattice structure that combines the advantages of superlattice structures and low-dimensional topologies. This structure can induce a moiré superlattice bandgap, causing spin quasiparticles and charged quasiparticles to have inconsistent velocities, resulting in spin-charge separation. This reduces the single-electron excitation probability, improves the population inversion of the laser, and simultaneously enhances the quantum confinement effect of the one-dimensional system. This strengthens the confinement factor of the active layer 103 of the laser element, regulates the optical field and confines the carriers to the active region, reduces the internal absorption loss and carrier absorption loss of the upper confinement layer 106, and regulates the tunnel barrier height, reduces the valence band order, lowers the hole injection barrier, improves the hole injection efficiency, achieves continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0045] Furthermore, the one-dimensional charge density wave layer 107 in this embodiment can be implemented using any of the following structures:

[0046] (1) Topological Dirac superlattice structure of binary composite structure

[0047] MoTe2 / BaSnO3,MoTe2 / CsPbIBr2,MoTe2 / Cs2AgFeCl6:In,MoTe2 / RSe2,MoTe2 / CsAgBiBr6,BaSnO3 / CsPbIBr2,BaSnO3 / Cs2AgFeCl6:In,BaSnO3 / RSe2,BaSnO3 / CsAgBiBr6,CsPbIBr2 / Cs2AgFeCl6:In, CsPbIBr2 / RSe2, CsPbIBr2 / CsAgBiBr6, Cs2AgFeCl6:In / RSe2, Cs2AgFeCl6:In / CsAgBiBr6, RSe2 / CsAgBiBr6.

[0048] (2) Topological Dirac superlattice structure of ternary composite structure

[0049] MoTe2 / BaSnO3 / CsPbIBr2,MoTe2 / BaSnO3 / Cs2AgFeCl6:In,MoTe2 / BaSnO3 / RSe2,MoTe2 / BaSnO3 / CsAgBiBr6,MoTe2 / CsPbIBr2 / Cs2A gFeCl6:In,MoTe2 / CsPbIBr2 / RSe2,MoTe2 / CsPbIBr2 / CsAgBiBr6,MoTe2 / Cs2AgFeCl6:In / RSe2,MoTe2 / Cs2AgFeCl6:In / CsAgBiBr6, MoTe2 / RSe2 / CsAgBiBr6,BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In, BaSnO3 / CsPbIBr2 / RSe2,BaSnO3 / CsPbIBr2 / CsAgBiBr6, BaSnO3 / Cs2AgFeCl6:In / RSe2,BaSnO3 / Cs2AgFeCl6:In / CsAgBiBr6, BaSnO3 / RSe2 / CsAgBiBr6, CsPbIBr2 / Cs2AgFeCl6:In / RSe2, CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6, CsPbIBr2 / RSe2 / CsAgBiBr6, Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

[0050] (3) Topological Dirac superlattice structure of quaternary composite structure

[0051] MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In, MoTe2 / BaSnO3 / CsPbIBr2 / RSe2,MoTe2 / BaSnO3 / CsPbIBr2 / CsAgBiBr6, MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2,MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6,

[0052] MoTe2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2,BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6,

[0053] BaSnO3 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0054] CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

[0055] (4) Topological Dirac superlattice structures with pentagonal or hexagramal combined structures

[0056] MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2,

[0057] MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6,

[0058] MoTe2 / BaSnO3 / CsPbIBr2 / RSe2 / CsAgBiBr6,

[0059] MoTe2 / BaSnO3 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0060] MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0061] BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6,

[0062] MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

[0063] The aforementioned topological Dirac superlattice structure can be selected according to the actual development process, and this embodiment does not impose any special limitations. The table below shows a comparison of parameters between the semiconductor laser element with a one-dimensional charge density wave layer proposed in this embodiment and a traditional semiconductor laser element. It can be seen that the semiconductor laser element with a one-dimensional charge density wave layer in this embodiment has higher performance.

[0064]

[0065] Furthermore, in this embodiment, the lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ;

[0066] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm⁻¹. -3 Up to 5E19cm -3 ;

[0067] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ;

[0068] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate 100, sapphire / AlN composite substrate 100, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate 100, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate 100.

[0069] The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 angstroms to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 angstroms to 120 angstroms.

[0070] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor laser device having a one-dimensional charge density wave layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, characterized in that, A one-dimensional charge density wave layer is provided between the active layer and the upper waveguide layer, and between the upper waveguide layer and the electron blocking layer. The one-dimensional charge density wave layer is a topological Dirac superlattice structure.

2. The semiconductor laser element according to claim 1, characterized in that, The one-dimensional charge density wave layer is any two or more combinations of MoTe2, BaSnO3, CsPbIBr2, Cs2AgFeCl6:In, RSe2, and CsAgBiBr6, and the doping element of the one-dimensional charge density wave layer is any one or any combination of Li, Be, Mg, Na, K, Ca, Sr, Fr, Ra, and Zn.

3. The semiconductor laser element according to claim 1, characterized in that, The thickness of the one-dimensional charge density wave layer is 5 nm to 500 nm.

4. The semiconductor laser element according to claim 1, characterized in that, The one-dimensional charge density wave layer is any one of the following binary combination structures of the topological Dirac superlattice: MoTe2 / BaSnO3, MoTe2 / CsPbIBr2, MoTe2 / Cs2AgFeCl6:In, MoTe2 / RSe2, MoTe2 / CsAgBiBr6, BaSnO3 / CsPbIBr2, BaSnO3 / Cs2AgFeCl6:In, BaSnO3 / RSe2, BaSnO3 / CsAgBiBr6, CsPbIBr2 / Cs2AgFeCl6:In, CsPbIBr2 / RSe2, CsPbIBr2 / CsAgBiBr6, Cs2AgFeCl6:In / RSe2, Cs2AgFeCl6:In / CsAgBiBr6, RSe2 / CsAgBiBr6.

5. The semiconductor laser element according to claim 1, characterized in that, The one-dimensional charge density wave layer is any one of the following ternary combined topological Dirac superlattice structures: MoTe2 / BaSnO3 / CsPbIBr2, MoTe2 / BaSnO3 / Cs2AgFeCl6:In, MoTe2 / BaSnO3 / RSe2, MoTe2 / BaSnO3 / CsAgBiBr6, MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In, MoTe2 / CsPbIBr2 / RSe2, MoTe2 / CsPbIBr2 / CsAgBiBr6, MoTe2 / Cs2AgFeCl6:In / RSe2, MoTe2 / Cs2AgFeCl6:In / CsAgBiBr6, MoTe2 / RSe2 / CsAgBiBr6, BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In BaSnO3 / CsPbIBr2 / RSe2, BaSnO3 / CsPbIBr2 / CsAgBiBr6, BaSnO3 / Cs2AgFeCl6:In / RSe2, BaSnO3 / Cs2AgFeCl6:In / CsAgBiBr6, BaSnO3 / RSe2 / CsAgBiBr6, CsPbIBr2 / Cs2AgFeCl6:In / RSe2, CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6, CsPbIBr2 / RSe2 / CsAgBiBr6, Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

6. The semiconductor laser element according to claim 1, characterized in that, The one-dimensional charge density wave layer is any one of the following quaternary combined topological Dirac superlattice structures: MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In, MoTe2 / BaSnO3 / CsPbIBr2 / RSe2, MoTe2 / BaSnO3 / CsPbIBr2 / CsAgBiBr6, MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2, MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6, MoTe2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6, BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6, BaSnO3 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6, CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

7. The semiconductor laser element according to claim 1, characterized in that, The one-dimensional charge density wave layer is any one of the following five-element or six-element combined topological Dirac superlattice structures: MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2, MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / CsAgBiBr6, MoTe2 / BaSnO3 / CsPbIBr2 / RSe2 / CsAgBiBr6, MoTe2 / BaSnO3 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6, MoTe2 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6, BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6. MoTe2 / BaSnO3 / CsPbIBr2 / Cs2AgFeCl6:In / RSe2 / CsAgBiBr6.

8. The semiconductor laser element according to claim 1, characterized in that, The lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ; The lower and upper waveguide layers are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm⁻¹. -3 Up to 5E19cm -3 ; The electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 Up to 1E20cm -3 ; The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

9. The semiconductor laser element according to claim 1, characterized in that, The active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 angstroms to 80 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 angstroms to 120 angstroms.

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