Deep silicon etching equipment and its assembly method

Abstract

This invention provides a deep silicon etching apparatus and its assembly method. The apparatus includes: a limiting device comprising an annular sidewall with multiple notches recessed from the top surface of the annular sidewall into the interior, the notches being spaced apart; a deep silicon reaction chamber, the limiting device being fitted onto the lower part of the deep silicon reaction chamber; a Faraday shield surrounding and covering the outer wall of the deep silicon reaction chamber, the lower edge of the Faraday shield connecting to the upper edge of the limiting device, the notches of the limiting device exposing the outer wall of the deep silicon reaction chamber; and a fixing film adhered to the Faraday shield and the exposed outer wall of the deep silicon reaction chamber to fix the Faraday shield to the deep silicon reaction chamber. This invention can prevent damage to the lower edge of the deep silicon reaction chamber, reduce spare parts consumption, reduce production costs, simplify installation, improve equipment maintenance efficiency, and increase production efficiency.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor integrated circuit manufacturing equipment, and in particular relates to a deep silicon etching device and its assembly method. Background Technology

[0002] Deep silicon etching machines are widely used in the semiconductor manufacturing industry. Deep silicon reaction chambers typically contain ceramic components. Some ceramic components need to be assembled before being installed into the reaction chamber. Some ceramic components have thin edges and vacuum-sealed surfaces, making them prone to damage during assembly. Severe damage can affect the seal and render the entire ceramic component unusable. Ceramic components are generally expensive, especially large ones, such as those in the ceramic chamber of a deep silicon etching machine. The following problems arise during the installation of the ceramic chamber in a deep silicon etching machine: 1) The ceramic reaction chamber of a deep silicon etching machine has a thin lower edge and requires vacuum sealing, making it prone to damage during installation. Severe damage can lead to leakage problems in the process chamber or render the ceramic component unusable; 2) Before installation, a Faraday cage needs to be installed outside the ceramic reaction chamber. There are dimensional requirements (e.g., 12 mm) between the lower edge of the Faraday cage and the lower edge of the chamber. The height and position need to be repeatedly adjusted and confirmed with calipers during installation, requiring at least two people to work together. After the position is confirmed, it needs to be secured with high-temperature tape immediately, resulting in low efficiency.

[0003] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this application. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a deep silicon etching device and its assembly method, so as to solve the problems of inconvenient installation and easy damage of ceramic reaction chambers in the prior art.

[0005] To achieve the above and other related objectives, the present invention provides a deep silicon etching apparatus, comprising: a limiting device including an annular sidewall, the top of which has multiple notches recessed into the annular sidewall extending beyond its top surface, the notches being spaced apart; a deep silicon reaction chamber, the limiting device being fitted onto the lower part of the deep silicon reaction chamber; a Faraday shield surrounding and covering the outer wall of the deep silicon reaction chamber, the lower edge of the Faraday shield connecting to the upper edge of the limiting device, the notches of the limiting device exposing the outer wall of the deep silicon reaction chamber; and a fixing film adhered to the Faraday shield and the exposed outer wall of the deep silicon reaction chamber to fix the Faraday shield to the deep silicon reaction chamber.

[0006] Optionally, the notch width of the limiting device is between 30 mm and 60 mm, and the distance between the lower edge of the notch and the bottom edge of the limiting device is between 4 mm and 6 mm.

[0007] Optionally, the height of the annular sidewall of the limiting device is between 10 mm and 15 mm.

[0008] Optionally, the inner diameter of the limiting device is equal to the outer diameter of the deep silicon reaction chamber.

[0009] Optionally, the number of the notches is three, and the three notches are arranged at equal intervals.

[0010] Optionally, the limiting device is made of polytetrafluoroethylene.

[0011] Optionally, the deep silicon reaction chamber is made of ceramic.

[0012] Optionally, a portion of the thickness of the inner wall of the lower edge of the deep silicon reaction chamber is removed to allow the base of the deep silicon reaction chamber to be embedded and connected, and the inner wall of the limiting device is fitted with the outer wall of the lower edge of the deep silicon reaction chamber to enhance the mechanical strength of the outer wall of the lower edge.

[0013] Optionally, the Faraday shield is attached to the outer wall of the deep silicon reaction chamber.

[0014] The present invention also provides an assembly method for a deep silicon etching apparatus, the assembly method comprising the following steps: 1) providing the limiting device and the deep silicon reaction chamber, wherein a portion of the thickness of the inner wall of the lower edge of the deep silicon reaction chamber is removed to allow the base of the deep silicon reaction chamber to be embedded and connected, and the limiting device is fitted onto the lower part of the deep silicon reaction chamber; 2) providing the Faraday shield, the Faraday shield surrounding and covering the outer wall of the deep silicon reaction chamber, the lower edge of the Faraday shield connecting with the upper edge of the limiting device, and the notch of the limiting device exposing the outer wall of the deep silicon reaction chamber; 3) providing the fixing film, the fixing film being pasted onto the Faraday shield and the outer wall of the deep silicon reaction chamber exposed by the notch, to fix the Faraday shield onto the deep silicon reaction chamber; 4) placing the deep silicon reaction chamber on the base, such that the base is embedded into the lower edge of the deep silicon reaction chamber.

[0015] Optionally, the Faraday shield surrounds the starting and ending edges of the deep silicon reaction chamber and is located at one of the plurality of notches.

[0016] As described above, the deep silicon etching apparatus and its assembly method of the present invention have the following beneficial effects:

[0017] This invention can effectively protect the edge of the ceramic cavity through the limiting device, preventing damage during installation and thus reducing the cost of periodic maintenance (PM). This invention can also effectively reduce the consumption of spare parts, thereby reducing production costs.

[0018] This invention, through a limiting device, allows for installation of the Faraday shield to be performed by only one person without the need for repeated height checks, greatly reducing installation difficulty. It can effectively improve the efficiency of periodic maintenance (PM), increase equipment uptime, and improve production efficiency. Attached Figure Description

[0019] The accompanying drawings, which form part of this specification, are used to provide a further understanding of the embodiments of this application and to illustrate the implementation of this application, together with the textual description, to explain the principles of this application. Obviously, the drawings described below are merely some embodiments of this application.

[0020] Figures 1-4 The diagram shows the structural schematics of each step in the assembly method of the deep silicon etching apparatus according to an embodiment of the present invention. Figure 4 The diagram shown is a structural schematic of a deep silicon etching apparatus according to an embodiment of the present invention.

[0021] Component designation explanation

[0022] 101 Limiting device

[0023] 102 Gap

[0024] 103 Deep Silicon Reaction Chamber

[0025] 104 Faraday shield

[0026] 1041 Initial Edge

[0027] 1042 Ending Edge

[0028] 105 Fixing film Detailed Implementation

[0029] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0030] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, whole, step, or component, but does not exclude the presence or addition of one or more other features, wholes, steps, or components.

[0031] Features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0032] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0033] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0034] In the context of this application, the structure described above the first feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0035] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0036] like Figures 1-4 As shown, this embodiment provides a deep silicon etching apparatus, which includes a limiting device 101, a deep silicon reaction chamber 103, a Faraday shield 104, and a fixing film 105.

[0037] like Figure 1 As shown, the limiting device 101 includes an annular sidewall, and the top of the annular sidewall is provided with a plurality of notches 102 that extend from the top surface of the annular sidewall into the interior of the annular sidewall, and the plurality of notches 102 are arranged at intervals.

[0038] In one embodiment, the width of the notch 102 in the limiting device 101 is between 30 mm and 60 mm, and the distance between the lower edge of the notch 102 and the bottom edge of the limiting device 101 is between 4 mm and 6 mm. For example, the width of the notch 102 can be 50 mm, and the distance between the lower edge of the notch 102 and the bottom edge of the limiting device 101 can be 5 mm. The notch 102 can facilitate the subsequent fixing of the Faraday shield 104.

[0039] In one embodiment, the height of the annular sidewall of the limiting device 101 is between 10 mm and 15 mm. The height of the annular sidewall of the limiting device 101 can be set according to the required distance between the Faraday shield 104 and the bottom of the deep silicon reaction chamber 103. For example, when the required distance between the Faraday shield 104 and the bottom of the deep silicon reaction chamber 103 is 12 mm, the height of the annular sidewall of the limiting device 101 can be set to 12 mm. Then, when installing the Faraday shield 104, the lower edge of the Faraday shield 104 can be directly connected to the upper edge of the limiting device 101, thereby eliminating the need for frequent measurements, greatly improving installation efficiency and saving installation time.

[0040] In one embodiment, the inner diameter of the limiting device 101 is equal to the outer diameter of the deep silicon reaction chamber 103. For example, the outer diameter of the deep silicon reaction chamber 103 is 3704 mm, and the inner diameter of the limiting device 101 is 3704 mm.

[0041] In one embodiment, there are three notches 102, and the three notches 102 are arranged at equal intervals, thereby achieving the effect of fixing the Faraday shield 104 with fewer fixing films 105. Of course, in other embodiments, the number of notches 102 can be adjusted according to the number of subsequent fixing films 105.

[0042] In one embodiment, the limiting device 101 is made of polytetrafluoroethylene (Teflon). The polytetrafluoroethylene limiting device 101 in this embodiment has the advantages of strong plasticity and relatively soft material. The lower part of the deep silicon reaction chamber 103 is placed therein, which can protect the lower edge of the deep silicon reaction chamber 103 and the sealing surface with the base from damage during assembly and placement.

[0043] like Figure 2 As shown, the deep silicon reaction chamber 103 includes an annular sidewall, and the limiting device 101 is sleeved on the lower part of the deep silicon reaction chamber 103.

[0044] In one embodiment, the deep silicon reaction chamber 103 is made of ceramic.

[0045] In one embodiment, a portion of the thickness of the inner wall of the lower edge of the deep silicon reaction chamber 103 is removed to form an annular groove, which allows the base of the deep silicon reaction chamber 103 to be embedded and connected. The inner wall of the limiting device 101 fits against the outer wall of the lower edge of the deep silicon reaction chamber 103 to enhance the mechanical strength of the outer wall of the lower edge.

[0046] like Figure 3 As shown, the Faraday shield 104 surrounds and covers the outer wall of the deep silicon reaction chamber 103. The lower edge of the Faraday shield 104 is connected to the upper edge of the limiting device 101. The notch 102 of the limiting device 101 exposes the outer wall of the deep silicon reaction chamber 103. The Faraday shield 104 can be made of metal or a composite material of flexible polymer and metal.

[0047] In one embodiment, the Faraday shield 104 is attached to the outer wall of the deep silicon reaction chamber 103.

[0048] like Figure 4 As shown, the fixing film 105 is adhered to the Faraday shield 104 and the outer wall of the deep silicon reaction chamber 103 exposed by the notch 102, so as to fix the Faraday shield 104 to the deep silicon reaction chamber 103. In one embodiment, each notch 102 is provided with a corresponding fixing film 105.

[0049] The present invention can effectively protect the edge of the ceramic cavity through the limiting device 101, prevent damage during installation, and thus reduce the cost of periodic maintenance (PM). The present invention can effectively reduce the consumption of spare parts, thereby reducing production costs.

[0050] The present invention, through the limiting device 101, enables the installation of the Faraday shield 104 to be carried out by only one person without the need for repeated height checks, which greatly reduces the installation difficulty, can effectively improve the efficiency of periodic maintenance (PM), increase the uptime of the equipment, and improve production efficiency.

[0051] like Figures 1-4 As shown, this embodiment also provides an assembly method for a deep silicon etching apparatus, the assembly method comprising the following steps:

[0052] like Figure 1 and Figure 2 As shown, firstly, step 1) is performed, providing the limiting device 101 and the deep silicon reaction chamber 103. Part of the thickness of the inner wall of the lower edge of the deep silicon reaction chamber 103 is removed to allow the base of the deep silicon reaction chamber 103 to be embedded and connected. The limiting device 101 is sleeved on the lower part of the deep silicon reaction chamber 103.

[0053] like Figure 3 As shown, then step 2) is performed, providing the Faraday shield 104, which surrounds and covers the outer wall of the deep silicon reaction chamber 103. The lower edge of the Faraday shield 104 is connected to the upper edge of the limiting device 101, and the notch 102 of the limiting device 101 exposes the outer wall of the deep silicon reaction chamber 103.

[0054] In one embodiment, the Faraday shield 104 surrounds the starting edge 1041 and ending edge 1042 of the deep silicon reaction chamber 103, and is located at one of the plurality of notches 102. This arrangement allows the fixing film 105 to be adhered to the junction of the starting edge 1041 and ending edge 1042 of the Faraday shield 104, ensuring the stability of the Faraday shield 104.

[0055] like Figure 4 As shown, step 3) is then performed, in which the fixing film 105 is provided and attached to the Faraday shield 104 and the outer wall of the deep silicon reaction chamber 103 exposed by the notch 102, so as to fix the Faraday shield 104 to the deep silicon reaction chamber 103.

[0056] Finally, in step 4), the deep silicon reaction chamber 103 is placed on the base, so that the base is embedded in the lower edge of the deep silicon reaction chamber 103.

[0057] The present invention, through the limiting device 101, enables the installation of the Faraday shield 104 to be carried out by only one person without the need for repeated height checks, which greatly reduces the installation difficulty, can effectively improve the efficiency of periodic maintenance (PM), increase the uptime of the equipment, and improve production efficiency.

[0058] As described above, the deep silicon etching apparatus and its assembly method of the present invention have the following beneficial effects:

[0059] The present invention can effectively protect the edge of the ceramic cavity through the limiting device 101, prevent damage during installation, and thus reduce the cost of periodic maintenance (PM). The present invention can effectively reduce the consumption of spare parts, thereby reducing production costs.

[0060] The present invention, through the limiting device 101, enables the installation of the Faraday shield 104 to be carried out by only one person without the need for repeated height checks, which greatly reduces the installation difficulty, can effectively improve the efficiency of periodic maintenance (PM), increase the uptime of the equipment, and improve production efficiency.

[0061] Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0062] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A deep silicon etching apparatus, characterized in that, The deep silicon etching equipment includes: A limiting device, the limiting device including an annular sidewall, the top of the annular sidewall having a plurality of notches recessed into the interior of the annular sidewall from the top surface of the annular sidewall, the plurality of notches being arranged at intervals; A deep silicon reaction chamber, wherein the limiting device is sleeved on the lower part of the deep silicon reaction chamber; A Faraday shield surrounds and covers the outer wall of the deep silicon reaction chamber. The lower edge of the Faraday shield is connected to the upper edge of the limiting device. The notch of the limiting device exposes the outer wall of the deep silicon reaction chamber. A fixing film is attached to the Faraday shield and the outer wall of the deep silicon reaction chamber exposed by the notch, so as to fix the Faraday shield to the deep silicon reaction chamber.

2. The deep silicon etching apparatus according to claim 1, characterized in that: The notch width of the limiting device is between 30 mm and 60 mm, and the distance between the lower edge of the notch and the bottom edge of the limiting device is between 4 mm and 6 mm.

3. The deep silicon etching apparatus according to claim 1, characterized in that: The height of the annular sidewall of the limiting device is between 10 mm and 15 mm.

4. The deep silicon etching apparatus according to claim 1, characterized in that: The inner diameter of the limiting device is equal to the outer diameter of the deep silicon reaction chamber.

5. The deep silicon etching apparatus according to claim 1, characterized in that: The number of gaps is three, and the three gaps are arranged at equal intervals.

6. The deep silicon etching apparatus according to claim 1, characterized in that: The limiting device is made of polytetrafluoroethylene.

7. The deep silicon etching apparatus according to claim 1, characterized in that: The deep silicon reaction chamber is made of ceramic.

8. The deep silicon etching apparatus according to claim 1, characterized in that: The inner wall of the lower edge of the deep silicon reaction chamber has a portion of its thickness removed to allow the base of the deep silicon reaction chamber to be embedded and connected. The inner wall of the limiting device fits against the outer wall of the lower edge of the deep silicon reaction chamber to enhance the mechanical strength of the outer wall of the lower edge.

9. The deep silicon etching apparatus according to claim 1, characterized in that: The Faraday shield is attached to the outer wall of the deep silicon reaction chamber.

10. A method for assembling a deep silicon etching apparatus as described in any one of claims 1 to 9, characterized in that, Includes the following steps: 1) Provide the limiting device and the deep silicon reaction chamber, wherein a portion of the thickness of the inner wall of the lower edge of the deep silicon reaction chamber is removed to allow the base of the deep silicon reaction chamber to be embedded and connected, and the limiting device is sleeved on the lower part of the deep silicon reaction chamber; 2) Provide the Faraday shield, which surrounds and covers the outer wall of the deep silicon reaction chamber. The lower edge of the Faraday shield is connected to the upper edge of the limiting device, and the notch of the limiting device exposes the outer wall of the deep silicon reaction chamber. 3) Provide the fixing film, and attach the fixing film to the Faraday shield and the outer wall of the deep silicon reaction chamber exposed by the notch, so as to fix the Faraday shield to the deep silicon reaction chamber; 4) Place the deep silicon reaction chamber on the base, so that the base is embedded in the lower edge of the deep silicon reaction chamber.

11. The assembly method of the deep silicon etching apparatus according to claim 10, characterized in that: The Faraday shield surrounds the starting and ending edges of the deep silicon reaction chamber and is located at one of the plurality of notches.

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