A method for preparing a high-resolution pattern and a nanoimprint pattern master

Abstract

This application provides a method for fabricating high-resolution patterns and a nanoimprint pattern master. This method utilizes the high selectivity and directionality of deep silicon etching technology and the high-step coverage of thin-film deposition processes. By depositing thin films within the pattern gaps, the pattern size is reduced. This allows for obtaining higher resolution and smaller-sized nanoimprint patterns without increasing the resolution of electron beam lithography itself. Furthermore, by modifying the etching and thin-film deposition parameters, different morphologies of the nanoimprint master and the size of the master pattern can be controlled, resulting in nanoimprint patterns with different feature sizes. Moreover, the fabrication method of this application obtains size-adjustable nanoimprint patterns without changing the mask, requiring only one mask, greatly simplifying the process and reducing costs.

Description

Technical Field

[0001] This application relates to the technical field of nanoimprinting, and in particular to a method for preparing high-resolution graphics and a nanoimprinting graphic master. Background Technology

[0002] Nanoimprint lithography is a micro / nano-scale manufacturing technology that achieves nanoscale precision and resolution by imprinting microstructure patterns onto a substrate. It has broad application prospects in semiconductor manufacturing, MEMS (Micro-Electro-Mechanical Systems), and biomedicine. Nanoimprint lithography overcomes the difficulties of traditional photolithography processes in reducing feature sizes, offering advantages such as low cost, high resolution, and high yield in low-end photolithography manufacturing. The preparation of nanoimprint master plates relies heavily on high-resolution photolithography technologies such as electron beam lithography. To further improve the resolution of nanoimprint master plates, the common approach is to improve the resolution of electron beam lithography itself. However, improving the resolution of electron beam lithography is technically constrained, being difficult and costly. Furthermore, electron beam lithography itself suffers from drawbacks such as long exposure times, high cost, and proximity effects, hindering the further development and widespread adoption of nanoimprint lithography.

[0003] Therefore, how to obtain high-resolution, smaller-sized nanoimprint masters without increasing the resolution of electron beam lithography itself is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] In view of this, this application provides a method for preparing high-resolution patterns and a nanoimprint pattern master, which can effectively solve the problems of high difficulty and high cost in improving the resolution of electron beam lithography itself.

[0005] This application provides a method for preparing high-resolution graphics, comprising the following steps:

[0006] S100: A first substrate is provided, and a mask having a first patterned structure is disposed on the first substrate;

[0007] S200: A second patterned structure is fabricated on the first substrate using a deep silicon etching process through the first patterned structure, and the mask is removed;

[0008] S300: A passivation layer is deposited on the side of the first substrate where the second patterned structure is located, such that the passivation layer covers the inner wall of the second patterned structure and the surface of the first substrate, thereby obtaining a first nanoimprint master.

[0009] S400: Fill the gaps in the pattern of the first nanoimprint master with master adhesive, so that the master adhesive is patterned into a master adhesive pattern, and transfer the master adhesive pattern by means of a soft film.

[0010] S500: A second substrate is provided and a nanoimprint adhesive is coated on the second substrate. The master pattern is pressed onto the nanoimprint adhesive, and the nanoimprint adhesive is subjected to ultraviolet curing treatment to separate the master pattern, that is, a master pattern structure is formed on the nanoimprint adhesive.

[0011] In one embodiment, the passivation layer is made of silicon dioxide or silicon nitride.

[0012] In one embodiment, the passivation layer is deposited using a method including low-pressure chemical vapor deposition, thermal oxidation, atomic layer deposition, or plasma-enhanced chemical vapor deposition.

[0013] In one embodiment, the soft film is a flexible transparent material.

[0014] This application also provides a method for preparing high-resolution graphics, comprising the following steps:

[0015] H100: A first substrate is provided, and a mask having a first patterned structure is disposed on the first substrate;

[0016] H200: A second patterned structure is fabricated on the first substrate using a deep silicon etching process through the first patterned structure, and the mask is removed;

[0017] H300: A passivation layer is deposited on the side of the first substrate where the second patterned structure is located, such that the passivation layer covers the inner wall of the second patterned structure and the surface of the first substrate;

[0018] H400: Remove the portion of the passivation layer located on the surface of the first substrate and the portion of the bottom wall of the second patterned structure to obtain a second nanoimprint master.

[0019] H500: Fill the gaps in the pattern of the second nanoimprint master with master adhesive, so that the master adhesive is patterned into a master adhesive pattern, and the master adhesive pattern is transferred out by a soft film.

[0020] H600: A second substrate is provided and a nanoimprint adhesive is coated on the second substrate. The master pattern is pressed onto the nanoimprint adhesive, and the nanoimprint adhesive is subjected to ultraviolet curing treatment to separate the master pattern, that is, a master pattern structure is formed on the nanoimprint adhesive.

[0021] In one embodiment, step H400 further includes: removing a portion of the passivation layer located on the surface of the first substrate and a portion of the bottom wall of the second patterned structure by reactive ion etching, while partially isotropic etching thins the passivation layer on the sidewall of the second patterned structure.

[0022] This application also provides a method for preparing high-resolution graphics, comprising the following steps:

[0023] Q100: A first substrate is provided, and a mask having a first patterned structure is disposed on the first substrate;

[0024] Q200: A second patterned structure is fabricated on the first substrate using a deep silicon etching process through the first patterned structure, and the mask is removed;

[0025] Q300: The surface of the first substrate is thermally oxidized to form an oxide layer, the oxide layer covering the inner wall of the second patterned structure;

[0026] Q400: Remove the oxide layer to obtain the third nanoimprint master.

[0027] Q500: Fill the gaps in the pattern of the third nanometer imprint master with master adhesive, so that the master adhesive is patterned into a master adhesive pattern, and the master adhesive pattern is bonded and transferred out through a soft film;

[0028] Q600: A second substrate is provided and a nanoimprint adhesive is coated on the second substrate. The master pattern is pressed onto the nanoimprint adhesive, and the nanoimprint adhesive is subjected to ultraviolet curing treatment to separate the master pattern, that is, a master pattern structure is formed on the nanoimprint adhesive.

[0029] In one embodiment, in step Q400, the oxide layer is removed by a buffer oxide etching solution or a dilute hydrofluoric acid solution.

[0030] In one embodiment, the thickness of the oxide layer is X, and the thermal oxidation consumes 0.44X of the thickness of the first substrate.

[0031] This application also provides a nanoimprint pattern master, which is fabricated using the high-resolution pattern preparation method described above.

[0032] In summary, this application provides a method for fabricating high-resolution patterns and a nanoimprint pattern master. This method utilizes the high selectivity and directionality of deep silicon etching technology and the high-step coverage of thin-film deposition processes. By depositing thin films within the pattern gaps, the pattern size is reduced. This allows for obtaining higher resolution and smaller-sized nanoimprint patterns without increasing the resolution of electron beam lithography itself. Furthermore, by modifying the etching and thin-film deposition parameters, different morphologies of the nanoimprint master and the reduction or enlargement of the master pattern size can be achieved, resulting in nanoimprint patterns with different feature sizes. Moreover, the fabrication method of this application obtains size-adjustable nanoimprint patterns without changing the mask, requiring only one mask, greatly simplifying the process and reducing costs. Attached Figure Description

[0033] Figure 1 This is a schematic flowchart illustrating a method for preparing high-resolution graphics in one embodiment of this application.

[0034] Figure 2 for Figure 1 A schematic diagram of the process for preparing medium-to-high resolution graphics.

[0035] Figure 3 This is a schematic flowchart illustrating a method for preparing high-resolution graphics in one embodiment of this application.

[0036] Figure 4 for Figure 3 A schematic diagram of the process for preparing medium-to-high resolution graphics.

[0037] Figure 5 This is a schematic flowchart illustrating a method for preparing high-resolution graphics in one embodiment of this application.

[0038] Figure 6 for Figure 5 A schematic diagram of the process for preparing medium-to-high resolution graphics.

[0039] Reference numerals: 10-First substrate; 12-Mask; 14-First pattern structure; 16-Second pattern structure; 18-Passivation layer; 20-First nanoimprint master; 22-Master adhesive pattern; 24-Soft film; 26-Second substrate; 28-Nanoimprint adhesive; 30-Master pattern structure; 32-Second nanoimprint master; 34-Oxide layer; 36-Third nanoimprint master. Detailed Implementation

[0040] Before describing the embodiments in detail, it should be understood that this application is not limited to the detailed structures or element arrangements described below or in the accompanying drawings. This application can be implemented in other ways. Furthermore, it should be understood that the wording and terminology used herein are for descriptive purposes only and should not be construed as limiting. The terms "comprising," "including," "having," and similar expressions used herein mean to include the items listed thereafter, their equivalents, and other additional items. In particular, when describing "an element," this application does not limit the number of elements to one, but may include multiple elements.

[0041] Example 1

[0042] Please refer to Figure 1 As shown, this application provides a method for preparing high-resolution graphics, including the following steps:

[0043] S100: A first substrate 10 is provided, and a mask 12 having a first pattern structure 14 is disposed on the first substrate 10;

[0044] S200: The second patterned structure 16 is fabricated on the first substrate 10 by using a deep silicon etching process through the first patterned structure 14, and the mask 12 is removed.

[0045] S300: A passivation layer 18 is deposited on the side where the second patterned structure 16 of the first substrate 10 is located, such that the passivation layer 18 covers the inner wall of the second patterned structure 16 and the surface of the first substrate 10, thereby obtaining the first nanoimprint master 20.

[0046] S400: Fill the gap between the patterns in the first nanoimprint master 20 with master adhesive, so that the master adhesive is patterned into master adhesive pattern 22, and the master adhesive pattern 22 is transferred out by the soft film 24.

[0047] S500: A second substrate 26 is provided and a nanoimprint adhesive 28 is coated on the second substrate 26. A master pattern 22 is pressed onto the nanoimprint adhesive 28. The nanoimprint adhesive 28 is subjected to ultraviolet curing treatment to separate the master pattern 22, that is, a master pattern structure 30 is formed on the nanoimprint adhesive 28.

[0048] More specifically, such as Figure 2 As shown, the specific technical solutions include:

[0049] A first substrate 10 is provided, for example, made of silicon. A mask 12 with a first pattern structure 14 is disposed on the first substrate 10. The first pattern structure 14 is, for example, a perforated structure disposed through the mask 12. The mask 12 is, for example, a photolithography mask, which can use electron beam photoresist. The electron beam photoresist can be positive or negative. Positive photoresist is, for example, PMMA (polymethyl methacrylate), ZEP-520A (a modified PMMA with benzene rings, composed of a copolymer of α-chloromethyl methacrylate and α-methylstyrene) or AR-P 6200 (SCAR62). Negative photoresist is, for example, HSQ (its composition is an inorganic compound based on silicon dioxide, composed of a hydrosilicate resin in a methyl isobutyl ketone solvent). In this embodiment, the mask 12 uses positive photoresist.

[0050] A second pattern structure 16 is fabricated on a first substrate 10 using a deep silicon etching process through a first pattern structure 14. The second pattern structure 16 is, for example, a trench structure. After deep silicon etching, a nanoimprint master pattern with a high aspect ratio is obtained, at which point the gap width of the pattern is a1. Then, the mask 12 is removed by a dry processing method such as oxygen plasma or argon plasma.

[0051] A passivation layer 18 is deposited on the side of the first substrate 10 where the second patterned structure 16 is located. The passivation layer 18 can be made of materials such as silicon dioxide or silicon nitride. The resulting inorganic thin film will not leave imprinting adhesive residue, can be used repeatedly for a long time, and is not afraid of high-temperature processes. This allows the passivation layer 18 to cover the inner wall of the second patterned structure 16 and the upper surface of the first substrate 10, thereby obtaining the first nanoimprint master 20. Optionally, the passivation layer 18 can be deposited by methods such as low-pressure chemical vapor deposition, thermal oxidation, atomic layer deposition, or plasma-enhanced chemical vapor deposition. These deposition methods are common semiconductor processes, making production line equipment more compatible and also enabling the first substrate 10 to have high step coverage. At this time, the thickness and sidewall coverage of the deposited passivation layer 18 can be controlled by controlling parameters, so that the passivation layer 18 does not affect the accuracy of the master pattern after deposition. The thickness of the passivation layer 18 deposited on the sidewall of the second pattern structure 16 is b1. Therefore, the gap width of the first nanoimprint master 20 is a1-2b1, which achieves the purpose of reducing the pattern size of the first nanoimprint master 20 and having a higher resolution.

[0052] The master pattern is transferred. Specifically, the first nanoimprint master 20 can be treated with an anti-sticking process first, and then the gaps between the patterns in the first nanoimprint master 20 can be filled with master adhesive, for example, by spin coating, so that the master adhesive is patterned into master adhesive pattern 22. The anti-sticking process can reduce the adhesion between the master adhesive and the first nanoimprint master 20, so as to facilitate the subsequent transfer of the master adhesive. The master adhesive pattern 22 is transferred out by means of a soft film 24. The soft film 24 can be made of a flexible and transparent material such as PET (polyethylene terephthalate) to facilitate the ultraviolet curing process in the subsequent nanoimprinting process.

[0053] A second substrate 26 is provided, and a nanoimprint adhesive 28 is coated on the second substrate 26. The second substrate 26 is made of a transparent material, such as quartz glass or SiC wafer. The nanoimprint adhesive 28 can be coated on the second substrate 26 by spin coating. A soft film 24 with the master pattern 22 is pressed onto the side of the second substrate 26 with the nanoimprint adhesive 28, so that the soft film 24 and the second substrate 26 are in close contact and uniform pressure is applied, so that the nanoimprint adhesive 28 fills into the master pattern 22 under the action of surface tension, or in other words, the master pattern 22 is embedded in the nanoimprint adhesive 28. After the nanoimprint adhesive 28 is cured with ultraviolet light for a period of time, the master pattern 22 is separated from the nanoimprint adhesive 28, that is, a high resolution, small size master pattern structure 30 (i.e., nanoimprint pattern master) is formed on the nanoimprint adhesive 28. At this time, the gap width of the master pattern structure 30 is a1′=a1-2b1.

[0054] Example 2

[0055] Please refer to Figure 3 As shown, this application provides a method for preparing high-resolution graphics, including the following steps:

[0056] H100: A first substrate 10 is provided, and a mask 12 having a first patterned structure 14 is disposed on the first substrate 10;

[0057] H200: The second patterned structure 16 is fabricated on the first substrate 10 by using a deep silicon etching process through the first patterned structure 14, and the mask 12 is removed.

[0058] H300: A passivation layer 18 is deposited on the side where the second patterned structure 16 of the first substrate 10 is located, such that the passivation layer 18 covers the inner wall of the second patterned structure 16 and the surface of the first substrate 10.

[0059] H400: Remove the portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second pattern structure 16 to obtain the second nanoimprint master 32.

[0060] H500: Fill the gap between the patterns in the second nanoprint master 32 with master adhesive, so that the master adhesive is patterned into master adhesive pattern 22, and the master adhesive pattern 22 is transferred out by the soft film 24.

[0061] H600: A second substrate 26 is provided and a nanoimprint adhesive 28 is coated on the second substrate 26. A master pattern 22 is pressed onto the nanoimprint adhesive 28. The nanoimprint adhesive 28 is subjected to ultraviolet curing treatment to separate the master pattern 22, that is, a master pattern structure 30 is formed on the nanoimprint adhesive 28.

[0062] Furthermore, step H400 also includes: removing a portion of the passivation layer 18 located on the surface of the first substrate 10 and a portion of the bottom wall of the second patterned structure 16 by reactive ion etching, while partially isotropic etching thins the passivation layer 18 on the sidewall of the second patterned structure 16.

[0063] More specifically, such as Figure 4 As shown, the specific technical solutions include:

[0064] A first substrate 10 is provided, for example, made of silicon. A mask 12 with a first pattern structure 14 is disposed on the first substrate 10. The first pattern structure 14 is, for example, a perforated structure disposed through the mask 12. The mask 12 is, for example, a photolithography mask, which can use electron beam photoresist. The electron beam photoresist can be positive or negative. Positive photoresist is, for example, PMMA (polymethyl methacrylate), ZEP-520A (a modified PMMA with benzene rings, composed of a copolymer of α-chloromethyl methacrylate and α-methylstyrene) or AR-P 6200 (SCAR62). Negative photoresist is, for example, HSQ (its composition is an inorganic compound based on silicon dioxide, composed of a hydrosilicate resin in a methyl isobutyl ketone solvent). In this embodiment, the mask 12 uses positive photoresist.

[0065] A second pattern structure 16 is fabricated on a first substrate 10 using a deep silicon etching process through a first pattern structure 14. The second pattern structure 16 is, for example, a trench structure. After deep silicon etching, a nanoimprint master pattern with a high aspect ratio is obtained, at which point the gap width of the pattern is a2. Then, the mask 12 is removed by a dry processing method such as oxygen plasma or argon plasma.

[0066] A passivation layer 18 is deposited on the side of the second patterned structure 16 on the first substrate 10. The passivation layer 18 can be made of materials such as silicon dioxide or silicon nitride, so that the passivation layer 18 covers the inner wall of the second patterned structure 16 and the upper surface of the first substrate 10. Optionally, the passivation layer 18 is deposited by methods such as low-pressure chemical vapor deposition, thermal oxidation, atomic layer deposition, or plasma-enhanced chemical vapor deposition, so that the first substrate 10 has high step coverage. At this time, the thickness and sidewall coverage of the deposited passivation layer 18 can be controlled by controlling parameters so that the passivation layer 18 does not affect the accuracy of the master pattern after deposition.

[0067] The portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second patterned structure 16 are removed to obtain the second nanoimprint master 32. Specifically, reactive ion etching is used to remove the portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second patterned structure 16. Simultaneously, partial isotropic etching is used to thin the passivation layer 18 on the sidewall of the second patterned structure 16. For example, due to the etching directionality, the portion of the surface of the first substrate 10 and the portion of the bottom wall of the second patterned structure 16 will be etched first. After the passivation layer 18 on the sidewall of the second patterned structure 16 is thinned, one layer remains, further improving the aspect ratio of the patterned structure. The thickness of the passivation layer 18 on the sidewall of the second patterned structure 16 after thinning is b2. Thus, when the deposited passivation layer 18 affects the accuracy of the target pattern, etching can eliminate this effect to ensure the accuracy of the target pattern. Therefore, the gap width of the second nanoimprint master 32 is a2-2b2, achieving the purpose of reducing the pattern size of the second nanoimprint master 32 and having a higher resolution.

[0068] The master pattern is transferred. Specifically, the second nanoimprint master 32 can be treated with an anti-sticking process first, and then the gaps between the patterns in the second nanoimprint master 32 can be filled with master adhesive, for example, by spin coating, so that the master adhesive is patterned into master adhesive pattern 22. The anti-sticking process can reduce the adhesion between the master adhesive and the second nanoimprint master 32, so as to facilitate the subsequent transfer of the master adhesive. The master adhesive pattern 22 is transferred out by means of a soft film 24. The soft film 24 can be made of a flexible and transparent material such as PET (polyethylene terephthalate) to facilitate the ultraviolet curing process in the subsequent nanoimprinting process.

[0069] A second substrate 26 is provided, and a nanoimprint adhesive 28 is coated on the second substrate 26. The second substrate 26 is made of a transparent material, such as quartz glass or SiC wafer. The nanoimprint adhesive 28 can be coated on the second substrate 26 by spin coating. A soft film 24 with a master pattern 22 is pressed onto the side of the second substrate 26 with the nanoimprint adhesive 28, so that the soft film 24 and the second substrate 26 are in close contact and uniform pressure is applied, so that the nanoimprint adhesive 28 fills into the master pattern 22 under the action of surface tension, or in other words, the master pattern 22 is embedded in the nanoimprint adhesive 28. After the nanoimprint adhesive 28 is cured with ultraviolet light for a period of time, the master pattern 22 is separated from the nanoimprint adhesive 28, that is, a high resolution, small size master pattern structure 30 (i.e., nanoimprint pattern master) is formed on the nanoimprint adhesive 28. At this time, the gap width of the master pattern structure 30 is a2′=a2-2b2.

[0070] Example 3

[0071] Please refer to Figure 5As shown, this application provides a method for preparing high-resolution graphics, including the following steps:

[0072] Q100: A first substrate 10 is provided, and a mask 12 having a first patterned structure 14 is disposed on the first substrate 10;

[0073] Q200: The second patterned structure 16 is fabricated on the first substrate 10 by using a deep silicon etching process through the first patterned structure 14, and the mask 12 is removed.

[0074] Q300: The surface of the first substrate 10 is thermally oxidized to form an oxide layer 34, which covers the inner wall of the second patterned structure 16;

[0075] Q400: Remove oxide layer 34 to obtain third nanoimprint master 36;

[0076] Q500: Fill the gap between the patterns in the third nanometer imprint master 36 with master glue, so that the master glue is patterned into master glue pattern 22, and the master glue pattern 22 is transferred out by the soft film 24.

[0077] Q600: A second substrate 26 is provided and a nanoimprint adhesive 28 is coated on the second substrate 26. A master pattern 22 is pressed onto the nanoimprint adhesive 28. The nanoimprint adhesive 28 is subjected to ultraviolet curing treatment to separate the master pattern 22, that is, a master pattern structure 30 is formed on the nanoimprint adhesive 28.

[0078] Preferably, in step Q400, the oxide layer 34 is removed by a buffer oxide etching solution or a dilute hydrofluoric acid solution.

[0079] More specifically, such as Figure 2 As shown, the specific technical solutions include:

[0080] A first substrate 10 is provided, for example, made of silicon. A mask 12 with a first pattern structure 14 is disposed on the first substrate 10. The first pattern structure 14 is, for example, a perforated structure disposed through the mask 12. The mask 12 is, for example, a photolithography mask, which can use electron beam photoresist. The electron beam photoresist can be positive or negative. Positive photoresist is, for example, PMMA (polymethyl methacrylate), ZEP-520A (a modified PMMA with benzene rings, composed of a copolymer of α-chloromethyl methacrylate and α-methylstyrene) or AR-P 6200 (SCAR62). Negative photoresist is, for example, HSQ (its composition is an inorganic compound based on silicon dioxide, composed of a hydrosilicate resin in a methyl isobutyl ketone solvent). In this embodiment, the mask 12 uses positive photoresist.

[0081] A second pattern structure 16 is fabricated on a first substrate 10 using a deep silicon etching process through a first pattern structure 14. The second pattern structure 16 is, for example, a trench structure. After deep silicon etching, a nanoimprint master pattern with a high aspect ratio is obtained, at which point the gap width of the pattern is a3. Then, the mask 12 is removed by a dry processing method such as oxygen plasma or argon plasma.

[0082] The space required for nanoimprinting is reduced by increasing the pattern gap of the second patterned structure 16. For example, an oxide layer 34 is generated by consuming a portion of the surface layer of the first substrate 10 through thermal oxidation, and then the oxide layer 34 is removed. Specifically, the entire surface of the first substrate 10 is thermally oxidized to form the oxide layer 34, which covers the inner wall of the second patterned structure 16. The thickness of the oxide layer 34 is X, and the value of the thickness X ranges from 10 Å to 1000 Å. The surface layer thickness of the first substrate 10 consumed to form the oxide layer 34 is 0.44X, and the value of the consumed surface layer thickness 0.44X ranges from 4.4 Å to 440 Å, where Å is the thickness unit angstrom. Therefore, the thickness b3 of the sidewall thinning of the second patterned structure 16 is 0.44X.

[0083] The oxide layer 34 is removed by a wet process using a buffer oxide etching solution or a dilute hydrofluoric acid solution to obtain the third nanoimprint master 36. During the removal of the oxide layer 34, the sidewall surface layer of the second pattern structure 16 is removed, thereby increasing the gap width of the second pattern structure 16. This achieves the purpose of increasing the pattern size of the third nanoimprint master 36 and having a higher resolution. The pattern gap width of the third nanoimprint master 36 is a3+2b3.

[0084] The master pattern is transferred. Specifically, the third nanoimprint master 36 can be treated to prevent sticking first, and then the master adhesive can be filled into the gaps between the patterns in the third nanoimprint master 36. For example, it can be filled by spin coating, so that the master adhesive is patterned into master adhesive pattern 22. The anti-sticking treatment can reduce the adhesion between the master adhesive and the third nanoimprint master 36, so as to facilitate the subsequent transfer of the master adhesive. The master adhesive pattern 22 is transferred out by using a soft film 24. The soft film 24 can be made of flexible and transparent materials such as PET (polyethylene terephthalate) to facilitate the ultraviolet curing treatment in the subsequent nanoimprinting process.

[0085] A second substrate 26 is provided, and a nanoimprint adhesive 28 is coated on the second substrate 26. The second substrate 26 is made of a transparent material, such as quartz glass or SiC wafer. The nanoimprint adhesive 28 can be coated on the second substrate 26 by spin coating. A soft film 24 with a master pattern 22 is pressed onto the side of the second substrate 26 with the nanoimprint adhesive 28, so that the soft film 24 and the second substrate 26 are in close contact and uniform pressure is applied, so that the nanoimprint adhesive 28 fills into the master pattern 22 under the action of surface tension, or in other words, the master pattern 22 is embedded in the nanoimprint adhesive 28. After the nanoimprint adhesive 28 is cured with ultraviolet light for a period of time, the master pattern 22 is separated from the nanoimprint adhesive 28, that is, a high resolution, small size master pattern structure 30 (i.e., nanoimprint pattern master) is formed on the nanoimprint adhesive 28. At this time, the gap width of the master pattern structure 30 is a3′=a3+2b3.

[0086] In addition, this application also provides a nanoimprint pattern master, which is made using the high-resolution pattern preparation method described above.

[0087] This application provides a method for controlling the size of nanoimprinted patterns. Specifically, in Embodiments 1 and 2, small-sized nanoimprinted patterns are obtained by reducing the pattern gap after depositing a passivation layer. In Embodiment 3, the pattern gap is increased by thermal oxidation followed by removal, thereby reducing the space required for the nanoimprinted pattern. It should also be understood that in some embodiments, step Q400 can be removed in Embodiment 3, i.e., the oxide layer formed after thermal oxidation is not removed, which can also reduce the pattern gap and obtain small-sized nanoimprinted patterns. Alternatively, in Embodiments 1 and 2, the passivation layer can be implemented as an oxide layer. This application achieves the reduction or enlargement of the master pattern size by pre-treating the substrate, i.e., depositing a thin film on the substrate surface and controlling the film thickness and step coverage. Small-sized pattern transfer can be successfully achieved through nanoimprinting technology; by optimizing the mask pattern design, high-resolution small-sized patterns can be further obtained.

[0088] In summary, this application provides a method for fabricating high-resolution patterns and nanoimprint patterns. This method utilizes the high selectivity and directionality of deep silicon etching technology and the high-step coverage of thin-film deposition processes. By depositing thin films within the pattern gaps, the pattern size is reduced. This allows for obtaining higher resolution and smaller-sized nanoimprint patterns without increasing the resolution of electron beam lithography itself. Furthermore, by modifying the etching and thin-film deposition parameters, different morphologies of the nanoimprint master and the reduction or enlargement of the master pattern size can be achieved, resulting in nanoimprint patterns with different feature sizes. Moreover, the fabrication method of this application obtains size-adjustable nanoimprint patterns without changing the mask, requiring only one mask, greatly simplifying the process and reducing costs.

[0089] The concepts described herein may be implemented in other forms without departing from their spirit and characteristics. The specific embodiments disclosed should be considered illustrative rather than restrictive. Therefore, the scope of this application is determined by the appended claims, and not by the preceding description. Any changes within the literal meaning and equivalent scope of the claims should fall within the scope of those claims.

Claims

1. A method for preparing high-resolution graphics, characterized in that, Includes the following steps: S100: A first substrate (10) is provided, and a mask (12) having a first pattern structure (14) is disposed on the first substrate (10). S200: The second pattern structure (16) is fabricated on the first substrate (10) by using the first pattern structure (14) through the deep silicon etching process, and the mask (12) is removed. S300: A passivation layer (18) is deposited on the side of the first substrate (10) where the second patterned structure (16) is located, such that the passivation layer (18) covers the inner wall of the second patterned structure (16) and the surface of the first substrate (10), thereby obtaining a first nanoimprint master (20); wherein, after the passivation layer (18) is deposited, the gap width of the second patterned structure (16) is reduced from the initial width a1 to a1-2b1, where b1 is the thickness of the passivation layer deposited on the side wall of the second patterned structure (16); S400: Fill the pattern gaps of the first nanoimprint master (20) with master adhesive, so that the master adhesive is patterned into master adhesive pattern (22), and the master adhesive pattern (22) is transferred out by the soft film (24); S5 00: Provide a second substrate (26) and coat the second substrate (26) with nanoimprint adhesive (28), press the master adhesive pattern (22) onto the nanoimprint adhesive (28), perform ultraviolet curing treatment on the nanoimprint adhesive (28), separate the master adhesive pattern (22), that is, form a master pattern structure (30) on the nanoimprint adhesive (28); the gap width of the master pattern structure (30) is a1′=a1-2b1.

2. The method for preparing high-resolution graphics as described in claim 1, characterized in that, The passivation layer (18) is made of silicon dioxide or silicon nitride.

3. The method for preparing high-resolution graphics as described in claim 1, characterized in that, The passivation layer (18) is deposited by low-pressure chemical vapor deposition, thermal oxidation, atomic layer deposition or plasma-enhanced chemical vapor deposition.

4. The method for preparing high-resolution graphics as described in claim 1, characterized in that, The soft film (24) is a flexible transparent material.

5. A method for preparing high-resolution graphics, characterized in that, Includes the following steps: H100: A first substrate (10) is provided, and a mask (12) having a first pattern structure (14) is disposed on the first substrate (10). H200: The second pattern structure (16) is fabricated on the first substrate (10) by using the first pattern structure (14) through the deep silicon etching process, and the mask (12) is removed. H300: A passivation layer (18) is deposited on the side of the first substrate (10) where the second patterned structure (16) is located, such that the passivation layer (18) covers the inner wall of the second patterned structure (16) and the surface of the first substrate (10); wherein, after the passivation layer (18) is deposited, the gap width of the second patterned structure (16) is reduced from the initial width a2 to a2-2b2, where b2 is the thickness of the passivation layer deposited on the side wall of the second patterned structure (16); H400: Remove the portion of the passivation layer (18) located on the surface of the first substrate (10) and the portion of the bottom wall of the second pattern structure (16) to obtain the second nanoimprint master (32). H500: Fill the gaps in the pattern of the second nanoimprint master (32) with master adhesive, so that the master adhesive is patterned into master adhesive pattern (22), and the master adhesive pattern (22) is transferred out by the soft film (24); H600: A second substrate (26) is provided and a nanoimprint adhesive (28) is coated on the second substrate (26). The master pattern (22) is pressed onto the nanoimprint adhesive (28). The nanoimprint adhesive (28) is subjected to ultraviolet curing treatment to separate the master pattern (22), that is, a master pattern structure (30) is formed on the nanoimprint adhesive (28). The gap width of the master pattern structure (30) is a2′=a2-2b2.

6. The method for preparing high-resolution graphics as described in claim 5, characterized in that, Step H400 further includes: removing a portion of the passivation layer (18) located on the surface of the first substrate (10) and a portion of the bottom wall of the second patterned structure (16) by reactive ion etching, while partially isotropic etching thins the passivation layer (18) on the sidewall of the second patterned structure (16).

7. A nanoimprint pattern master, characterized in that, The nanoimprint pattern master is fabricated using the high-resolution pattern preparation method described in any one of claims 1-6.

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