A magnesium-zinc co-doped AlGaInP red light semiconductor laser device and a preparation method thereof

Abstract

The application discloses a magnesium-zinc co-doped AlGaInP red light semiconductor laser device and a preparation method thereof, and belongs to the optical electronic technical field. 0.5 In 0.5 P lower transition layer, Al 0.5 In 0.5 P lower confinement layer, (Al x1 Ga 1‑x1 ) y1 In 1‑y1 P lower waveguide layer, Ga x2 In 1‑ x2 P first quantum well, (Al x3 Ga 1‑x3 ) y2 In 1‑y2 P barrier layer, Ga x4 In 1‑x4 P second quantum well, (Al x5 Ga 1‑x5 ) y3 In 1‑y3 P upper waveguide layer, Al 0.5 In 0.5 P upper confinement layer-1, Al 0.5 In 0.5 P upper confinement layer-2, Ga x6 In 1‑x6 P etching stop layer, Al 0.5 In 0.5 P upper confinement layer-3, Ga 0.5 In 0.5 P upper transition layer and a GaAs cap layer. The waveguide layer is low-doped with Zn to reduce absorption loss, the confinement layer is co-doped with Mg and Zn to reduce the memory effect of Mg doping, the high-doping of the confinement layer is realized to reduce carrier overflow, waste heat generation is reduced, and high-temperature working reliability is improved.

Description

TECHNICAL FIELD

[0001] The application relates to a magnesium-zinc co-doped AlGaInP red light semiconductor laser device and a preparation method thereof, and belongs to the optical electronic technical field. BACKGROUND

[0002] The AlGaInP red light semiconductor laser has the characteristics of small volume, light weight, small power consumption, strong visibility, direct modulation, high efficiency and reliability, and as laser ranging is applied to the automobile radar industry, higher requirements are put forward for the high-temperature working reliability of the laser.

[0003] The AlGaInP red light semiconductor laser has a small band gap and a large thermal resistance, and when working at high temperature, the electron leakage is serious, which leads to an increase in working current and temperature rise, accelerates the deterioration of material quality, and affects the high-temperature working reliability. The document Journal of Crystal Growth, 191 (3), 1998, 313-318 points out that high doping of the P confinement layer can improve the quasi-Fermi level position of the P-type confinement layer, improve the effective potential barrier for blocking the leakage electrons, and help to reduce the threshold current; meanwhile, the high doping concentration helps to reduce the series resistance. However, the document Journal of Alloys and Compounds, 742, 2018, 790-796 points out that when the doping concentration of the P confinement layer is high, the diffusion of the dopant will lead to the roughening of the interface between the confinement layer and the waveguide layer, and meanwhile, the high Mg doping concentration will easily lead to an increase in the incorporation of oxygen, forming non-radiative recombination centers in the active region, and reducing the reliability.

[0004] The commonly used P-type dopants for the AlGaInP red light semiconductor laser mainly include Mg and Zn, and the document Japanese Journal of Applied Physicals Letters, 33, 1994, 749-753 points out that due to the memory effect, it is difficult to obtain a steep doping interface for Mg, and the saturation level of Zn doping is low and easy to diffuse. The document Journal of Crystal Growth, 414, 2015, 215-218 points out that the low doping concentration of the confinement layer leads to more electron overflow and large series resistance, and the high doping concentration of the waveguide layer increases the carrier absorption loss, so the confinement layer should have a high doping concentration, and the linear doping concentration of the quantum well to the confinement layer should be gradually increased; compared with the waveguide layer, the diffusion of Zn to the confinement layer and the quantum well can be ignored. SUMMARY

[0005] In view of the deficiencies of the prior art, the application provides a magnesium-zinc co-doped AlGaInP red light semiconductor laser device and a preparation method thereof, wherein the AlGaInP waveguide layer is doped with Zn, the AlInP confinement layer is doped with Mg, and the AlInP confinement layer close to the waveguide layer is co-doped with Mg and Zn, so that the linear change of the doping concentration caused by the memory effect of Mg doping is reduced, and a high doping concentration is ensured.

[0006] The technical scheme of the application is as follows:

[0007] In a first aspect, the application provides a magnesium-zinc co-doped AlGaInP red light semiconductor laser device.

[0008] A magnesium-zinc co-doped AlGaInP red light semiconductor laser device comprises, from bottom to top, a GaAs substrate, a GaAs buffer layer, a Ga 0.5 In 0.5 P lower transition layer, an Al 0.5 In 0.5 P lower confinement layer, an (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer, a Ga x2 In 1- x2 P first quantum well, an (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer, a Ga x4 In 1-x4 P second quantum well, an (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, an Al 0.5 In 0.5 P upper confinement layer-1, an Al 0.5 In 0.5 P upper confinement layer-2, a Ga x6 In 1-x6 P etching stop layer, an Al 0.5 In 0.5 P upper confinement layer-3, a Ga 0.5 In 0.5 P upper transition layer and a GaAs cap layer.

[0009] In the formula, 0.3≤x1≤1, 0.4≤y1≤0.6; 0.3≤x2≤0.5; 0.4≤x3≤0.7, 0.4≤y2≤0.6; 0.3≤x4≤0.5; 0.45≤x5≤0.95, 0.4≤y3≤0.6; 0.5≤x6≤0.7.

[0010] wherein, (Al x5 Ga 1-x5 ) y3 In 1-y3 The Zn-doped upper waveguide layer has a doping concentration of 2E17-6E17 atoms / cm 3 Low doping reduces series resistance and reduces absorption loss, thereby improving photoelectric conversion efficiency; Al 0.5 In 0.5 The upper limiting layer-1 is co-doped with Mg and Zn, and has a doping concentration of 1E18-2E18 atoms / cm 3 , to ensure high doping concentration and reduce linear variation of doping concentration caused by Mg doping memory effect; Al 0.5 In 0.5 The upper limiting layer-2 and Al 0.5 In 0.5 The upper limiting layer-3 is doped with Mg, and has a doping concentration of 1E18-2E18 atoms / cm 3 , to ensure high doping concentration, suppress electron overflow, and reduce series resistance.

[0011] The second aspect of the application provides a preparation method of a Mg and Zn co-doped AlGaInP red light semiconductor laser device, and the method comprises the following steps:

[0012] S1, placing a GaAs substrate in a growth chamber of a MOCVD device, baking the GaAs substrate in an H2 environment by heating to 720±10℃, and introducing AsH3 to perform surface thermal treatment on the GaAs substrate;

[0013] S2, slowly reducing the temperature to 680±10℃ at a speed not higher than 30℃ / min, continuing to introduce TMGa and AsH3, and growing a GaAs buffer layer on the GaAs substrate, to prevent defects from spreading from the substrate into the limiting layer, provide a fresh growth interface, and improve material growth quality;

[0014] S3, maintaining the temperature at 680±10℃, growing a pause on the GaAs buffer layer, introducing PH3, and achieving growth pause by stopping V group source (100% AsH3) and III group source (TMGa), stopping for 3s to 30s, and depleting As atoms in the reaction chamber;

[0015] S4, maintaining the temperature at 680±10℃, introducing TMGa, TMIn and PH3, and growing Ga 0.5 In 0.5 P lower transition layer, to reduce band gap mutation and improve electron migration rate;

[0016] S5, temperature is slowly changed to 700±10℃, the temperature rising speed is not higher than 60℃ / min, TMAl, TMIn and PH3 are input, and P-type Al 0.5 In 0.5 P lower transition layer is grown on the Ga 0.5 In 0.5 P lower confinement layer is grown on the lower transition layer;

[0017] S6, temperature is slowly changed to 650±10℃, TMAl, TMIn, TMGa and PH3 are input, and (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer is grown on the lower confinement layer, by changing the input TMAl, TMGa flow, the TMIn flow is unchanged, Al composition is gradually changed, and the band gap is gradually changed, which is helpful to improve carrier injection efficiency and improve photoelectric conversion efficiency;

[0018] S7, temperature is kept at 650±10℃, TMIn, TMGa and PH3 are continuously input, and Ga x2 In 1-x2 P first quantum well is grown on the lower waveguide layer;

[0019] S8, temperature is kept at 650±10℃, TMAl, TMIn, TMGa and PH3 are input, and (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer is grown on the first quantum well;

[0020] S9, temperature is kept at 650±10℃, TMIn, TMGa and PH3 are continuously input, and Ga x4 In 1-x4 P second quantum well is grown on the barrier layer;

[0021] S10, temperature is slowly changed to 700±10℃, TMAl, TMIn, TMGa and PH3 are continuously input, and (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer is grown on the second quantum well, by changing the input TMAl, TMGa flow, the TMIn flow is unchanged, Al composition is gradually changed, and the band gap is gradually changed, which is helpful to improve carrier injection efficiency and improve photoelectric conversion efficiency;

[0022] S11, temperature is kept at 700±10℃, TMAl, TMIn and PH3 are continuously input, and P-type Al 0.5 In 0.5 P upper confinement layer-1 is grown on the upper waveguide layer;

[0023] S12, temperature is kept at 700±10℃, TMAl, TMIn and PH3 are continuously introduced, P-type Al is grown on the upper confining layer-1 0.5 In 0.5 P upper confining layer-2;

[0024] S13, temperature is kept at 700±10℃, TMGa, TMIn and PH3 are continuously introduced, P-type Ga is grown on the upper confining layer-2 x6 In 1-x6 P etching stop layer;

[0025] S14, temperature is kept at 700±10℃, TMAl, TMIn and PH3 are continuously introduced, P-type Al is grown on the etching stop layer 0.5 In 0.5 P upper confining layer-3;

[0026] S15, temperature is gradually changed to 680±10℃, TMIn, TMGa and PH3 are introduced, Ga is grown on the upper confining layer-3 0.5 In 0.5 P upper transition layer;

[0027] S16, temperature is decreased to 540±10℃, the decreasing speed is not more than 40℃ / min, TMGa and AsH3 are continuously introduced, GaAs cap layer is grown on the upper transition layer.

[0028] Further, in step S2, the doping source of the GaAs buffer layer is Si2H6, the doping concentration is 2E18-5E18 atoms / cm 3 , and the thickness is 0.1-0.3μm; according to the application, the thickness of the GaAs buffer layer is 0.2μm, and the doping concentration is 2E18 atoms / cm 3 .

[0029] Further, in step S4, the Ga 0.5 In 0.5 The doping source of the P lower transition layer is Si2H6, and the doping concentration is 2E18-5E18 atoms / cm 3 , and the thickness is 0.1-0.3μm; according to the application, the thickness of the Ga 0.5 In 0.5 The thickness of the P lower transition layer is 0.2μm, and the doping concentration is 4E18 atoms / cm 3 .

[0030] Further, in step S5, the Al 0.5 In 0.5The doping source for the lower confinement layer is Si₂H₆, with a doping concentration of 7E¹⁷-2E¹⁸ atoms / cm². 3 The thickness is 0.5-3 μm; according to the preferred embodiment of the present invention, Al 0.5 In 0.5 The thickness of the P-type confinement layer is 1.5 μm, and the doping concentration is 1.3E18 atoms / cm². 3 .

[0031] Further, in step S6, the (Al) 1-x1 Ga x1 ) y1 In 1-y1 The thickness of the lower waveguide layer is 0.05-0.3 μm, unintentionally doped, 0.3≤x1≤1, 0.4≤y1≤0.6; according to the preferred embodiment of the present invention, x1 gradually changes from 0.95 to 0.5, y1=0.5, and the thickness of the lower waveguide layer is 0.15 μm.

[0032] Further, in step S7, the Ga x2 In 1-x2 The thickness of the first quantum well is 4-7 nm, unintentionally doped, 0.3 ≤ x2 ≤ 0.5, and subjected to compressive strain; according to the preferred embodiment of the present invention, x2 = 0.4, and the thickness of the first quantum well is 5 nm.

[0033] Furthermore, in step S8, (Al) x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the P barrier layer is 5-15 nm, unintentionally doped, with 0.4≤x3≤0.7, 0.4≤y2≤0.6, and subjected to tensile strain; according to the present invention, x3=0.65, y2=0.42, and the barrier layer thickness is 12 nm.

[0034] Further, in step S9, the Ga x4 In 1-x4 The thickness of the second quantum well is 4-7 nm, unintentionally doped, 0.3 ≤ x4 ≤ 0.5, and subjected to compressive strain; according to the present invention, x4 = 0.4, and the thickness of the second quantum well is 5 nm.

[0035] Further, in step S10, the (Al) x5 Ga 1-x5 ) y3 In 1-y3 The thickness of the waveguide layer on P is 0.05-0.3 μm, with 0.45≤x5≤0.95 and 0.4≤y3≤0.6. The doping source is DEZn or DMZn, either fully doped or partially doped away from the quantum well, with a doping concentration of 2E17-6E17 atoms / cm². 3; according to the application, x5 gradually changes from 0.5 to 0.95, y3 = 0.5, and the upper waveguide layer has a thickness of 0.15 μm. Further preferably, when the thickness is greater than or equal to 0.1 μm, the 0.1 μm upper waveguide layer away from the quantum well is doped, and the doping concentration gradually changes from 2E17 to 5E17 atoms / cm 3 .

[0036] Further, in step S11, the Al 0.5 In 0.5 The doping source of the P upper confinement layer-1 is Cp2Mg and DEZn, and the doping concentration is 1E18-2E18 atoms / cm 3 , and the thickness is 0.02-0.05 μm; according to the application, the Al 0.5 In 0.5 The thickness of the P upper confinement layer-1 is 0.03 μm, and the doping concentration is 1.2E18 atoms / cm 3 . Preferably, the Cp2Mg doping flow is constant during growth, and the DEZn doping flow gradually decreases, so as to offset the delay caused by the memory effect of Mg doping and diffusion by Zn doping, so as to achieve a higher doping concentration. The specific doping flow is designed according to the doping concentration.

[0037] Further, in step S12, the Al 0.5 In 0.5 The doping source of the P upper confinement layer-2 is Cp2Mg, and the doping concentration is 1E18-2E18 atoms / cm 3 , and the thickness is 0.1-0.3 μm; according to the application, the Al 0.5 In 0.5 The thickness of the P upper confinement layer-2 is 0.15 μm, and the doping concentration is 1.2E18 atoms / cm 3 .

[0038] Further, in step S13, the Ga x6 In 1-x6 The doping source of the P etching stop layer is Cp2Mg, and the doping concentration is 1.5E18-3E18 atoms / cm 3 , 0.5≤x6≤0.7, and the thickness is 8-20 nm; according to the application, the Ga x6 In 1-x6 The thickness of the P etching stop layer is 10 nm, and the doping concentration is 2E18 atoms / cm 3 , x6 = 0.55.

[0039] Further, in step S14, the Al 0.5 In 0.5The doping source of the upper limiting layer-3 is Cp2Mg, and the doping concentration is 1E18-2E18 atoms / cm 3 , and the thickness is 0.5-1.2 μm; according to the application, preferably, Al 0.5 In 0.5 The thickness of the upper limiting layer-3 is 0.9 μm, and the doping concentration is 1.2E18 atoms / cm 3 .

[0040] Further, in step S15, the Ga 0.5 In 0.5 The doping source of the upper transition layer is Cp2Mg, and the doping concentration is 1.2E18-3E18 atoms / cm 3 , and the thickness is 20-40 nm; according to the application, preferably, Ga 0.5 In 0.5 The thickness of the upper transition layer is 24 nm, and the doping concentration is 2E18 atoms / cm 3 .

[0041] Further, in step S16, the thickness of the cap layer is 0.1-0.5 μm, the doping source is CBr4 or DEZn, and the doping concentration is 4E19-1E20 atoms / cm 3 ; according to the application, preferably, the thickness of the cap layer is 0.2 μm, and the doping concentration is 7E19 atoms / cm 3 .

[0042] The MOCVD equipment used in the method of the application is all prior art.

[0043] TMGa, TMIn, TMAl, PH3, AsH3, etc. are all MOCVD epitaxial growth raw materials, Si2H6, Cp2Mg, CBr4, DEZn, etc. are all epitaxial growth doping sources, and except for the upper limiting layer-1 of AlInP, the rest of the doping parts are all single doping sources. Mg and Zn are commonly used P-type doping sources in AlGaInP materials, but the doping characteristics of the two are different, Mg doping segregates in excess, and Zn doping replaces III group atoms in excess, which is easy to cause mismatching and blackening, and co-doping is beneficial to offsetting the doping delay caused by the "memory effect" of Mg doping by using the diffusion ability of Zn, but the growth conditions such as temperature and flow need to be optimized to avoid doping mismatching.

[0044] Technical features and beneficial effects of the application:

[0045] (1) Zn is used for doping the AlGaInP waveguide layer, a certain concentration of doping is ensured, series resistance is reduced, and photoelectric conversion efficiency is improved;

[0046] (2) Mg is used for doping the AlInP limiting layer, a higher doping concentration is used to reduce electron leakage and reduce waste heat generation;

[0047] (3) Mg and Zn co-doping in the AlInP confining layer close to the waveguide layer part, reducing the linear variation of the doping concentration caused by Mg doping memory effect, ensuring a higher doping concentration. BRIEF DESCRIPTION OF DRAWINGS

[0048] Figure 1 is a structural schematic diagram of the laser device described in the present application;

[0049] Figure 2 is a conventional structural schematic diagram of the laser device;

[0050] wherein 1 is a GaAs substrate (substrate off-angle 9-15°), 2 is a GaAs buffer layer, 3 is a Ga 0.5 In 0.5 P lower transition layer, 4 is an Al 0.5 In 0.5 P lower confining layer, 5 is an (Al x1 Ga 1-x1 ) y1 In 1-y1 P waveguide layer, 6 is a Ga x2 In 1-x2 P first quantum well, 7 is an (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer, 8 is a Ga x4 In 1-x4 P second quantum well, 9 is an (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, 10 is an Al 0.5 In 0.5 P upper confining layer-1, 11 is an Al 0.5 In 0.5 P upper confining layer-2, 12 is a Ga x6 In 1-x6 P etching stop layer, 13 is an Al 0.5 In 0.5 P upper confining layer-3, 14 is a Ga 0.5 In 0.5 P upper transition layer, and 15 is a GaAs cap layer.

[0051] Figure 3 is the operating current of the structure of the laser device described in the present application at different temperatures of 50-85℃;

[0052] Figure 4 is the operating current of the conventional structure of the laser device at different temperatures of 50-85℃. DETAILED DESCRIPTION

[0053] The application will be further described below by way of examples and with reference to the accompanying drawings, but is not limited thereto.

[0054] Example 1

[0055] A magnesium-zinc co-doped AlGaInP red light semiconductor laser device includes, from bottom to top, a GaAs substrate, a GaAs buffer layer, a Ga 0.5 In 0.5 P lower transition layer, an Al 0.5 In 0.5 P lower confinement layer, an (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer, a Ga x2 In 1- x2 P first quantum well, an (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer, a Ga x4 In 1-x4 P second quantum well, an (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, an Al 0.5 In 0.5 P upper confinement layer-1, an Al 0.5 In 0.5 P upper confinement layer-2, a Ga x6 In 1-x6 P etching stop layer, an Al 0.5 In 0.5 P upper confinement layer-3, a Ga 0.5 In 0.5 P upper transition layer and a GaAs cap layer.

[0056] Wherein, x1 gradually changes from 0.95 to 0.5, y1=0.5; x2=0.4, x3=0.65, y2=0.42, x4=0.4, x5 gradually changes from 0.5 to 0.95, y3=0.5, x6=0.55.

[0057] Wherein, (Al x5 Ga 1-x5 ) y3 In 1-y3 The upper waveguide layer of InP is doped with Zn, and the doping concentration is 2E17-6E17. Low doping reduces series resistance and reduces absorption loss, thereby improving photoelectric conversion efficiency; the Al 0.5 In 0.5P upper confining layer-1 is co-doped with Mg and Zn, and the doping concentration is 1.2E18 atoms / cm 3 , to ensure high doping concentration and reduce the linear variation of doping concentration caused by Mg doping memory effect; Al 0.5 In 0.5 P upper confining layer-2 and Al 0.5 In 0.5 P upper confining layer-3 is doped with Mg, and the doping concentration is 1.2E18 atoms / cm 3 , to ensure high doping concentration, inhibit electron overflow, and reduce series resistance.

[0058] Embodiment 2

[0059] An AlGaInP red semiconductor laser device co-doped with Mg and Zn, which has the structure as described in Embodiment 1, except that it comprises, from bottom to top, a GaAs substrate, a GaAs buffer layer, a Ga 0.5 In 0.5 P lower transition layer, Al 0.5 In 0.5 P lower confining layer, (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer, Ga x2 In 1-x2 P first quantum well, (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer, Ga x4 In 1-x4 P second quantum well, (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, Al 0.5 In 0.5 P upper confining layer-1, Al 0.5 In 0.5 P upper confining layer-2, Ga x6 In 1-x6 P etching stop layer, Al 0.5 In 0.5 P upper confining layer-3, Ga 0.5 In 0.5 P upper transition layer and a GaAs cap layer.

[0060] wherein x1=0.3, y1=0.4; x2=0.3, x3=0.4, y2=0.4, x4=0.3, x5=0.45, y3=0.4, x6=0.5.

[0061] Embodiment 3

[0062] A magnesium-zinc co-doped AlGaInP red light semiconductor laser device, the structure of which is as described in Embodiment 1, except that it comprises, in order from bottom to top, a GaAs substrate, a GaAs buffer layer, a Ga 0.5 In 0.5 P lower transition layer, an Al 0.5 In 0.5 P lower confinement layer, an (Al x1 Ga 1-x1 ) y1 In 1-y1 P lower waveguide layer, a Ga x2 In 1-x2 P first quantum well, an (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer, a Ga x4 In 1-x4 P second quantum well, an (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, an Al 0.5 In 0.5 P upper confinement layer-1, an Al 0.5 In 0.5 P upper confinement layer-2, a Ga x6 In 1-x6 P etching stop layer, an Al 0.5 In 0.5 P upper confinement layer-3, a Ga 0.5 In 0.5 P upper transition layer and a GaAs cap layer.

[0063] wherein x1=1, y1=0.6; x2=0.5, x3=0.7, y2=0.6, x4=0.5, x5=0.95, y3=0.6, x6=0.7.

[0064] Embodiment 4

[0065] A method for preparing the magnesium-zinc co-doped AlGaInP red light semiconductor laser device described in Embodiment 1, the method comprising the following steps:

[0066] S1, placing a GaAs substrate in a growth chamber of a MOCVD device, baking under a H2 environment at a temperature of 720±10℃, and passing in AsH3 to perform surface thermal treatment on the GaAs substrate;

[0067] S2, the temperature is slowly decreased to 680±10℃, the decreasing speed is not higher than 30℃ / min, TMGa and AsH3 are continuously inputted, a GaAs buffer layer is grown on the GaAs substrate, the purpose is to prevent defects from spreading into the confinement layer from the substrate, to provide a fresh growth interface and to improve the material growth quality; the doping source of the GaAs buffer layer is Si2H6, the thickness of the GaAs buffer layer is 0.2μm, and the doping concentration is 2E18 atoms / cm 3 .

[0068] S3, the temperature is kept at 680±10℃, a growth pause is grown on the GaAs buffer layer, PH3 is inputted, the growth pause is realized by stopping the V group source (100% AsH3) and the III group source (TMGa), the reaction chamber is depleted of As atoms for 3s to 30s;

[0069] S4, the temperature is kept at 680±10℃, TMGa, TMIn and PH3 are inputted, a Ga 0.5 In 0.5 P lower transition layer is grown on the GaAs buffer layer, the purpose is to reduce the band gap mutation and to improve the electron migration rate; the doping source of the Ga 0.5 In 0.5 P lower transition layer is Si2H6, the thickness of the Ga 0.5 In 0.5 P lower transition layer is 0.2μm, and the doping concentration is 4E18 atoms / cm 3 .

[0070] S5, the temperature is slowly increased to 700±10℃, the increasing speed is not higher than 60℃ / min, TMAl, TMIn and PH3 are inputted, an n-type Al 0.5 In 0.5 P lower confinement layer is grown on the Ga 0.5 In 0.5 P lower confinement layer; the doping source of the Al 0.5 In 0.5 P lower confinement layer is Si2H6, the thickness of the Al 0.5 In 0.5 P lower confinement layer is 1.5μm, and the doping concentration is 1.3E18 atoms / cm 3 .

[0071] S6, the temperature is slowly increased to 650±10℃, TMAl, TMIn, TMGa and PH3 are inputted, an (Al x1 Ga 1-x1 ) y1 In 1-y1P lower waveguide layer, by changing the TMAl, TMGa flow, TMIn flow is constant, Al composition gradually, band gap gradually helps to improve the carrier injection efficiency, improve photoelectric conversion efficiency; the (Al 1-x1 Ga x1 ) y1 In 1-y1 The thickness of the P lower waveguide layer is 0.15 μm, unintentionally doped, x1 gradually changes from 0.95 to 0.5, y1 = 0.5.

[0072] S7, the temperature is kept at 650±10℃, TMIn, TMGa and PH3 are continuously introduced, Ga x2 In 1-x2 P first quantum well; the Ga x2 In 1-x2 The thickness of the P first quantum well is 5 nm, unintentionally doped, x2 = 0.4, and is under compressive strain.

[0073] S8, the temperature is kept at 650±10℃, TMAl, TMIn, TMGa and PH3 are introduced, (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer; (Al x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the P barrier layer is 12 nm, unintentionally doped, x3 = 0.65, y2 = 0.42, and is under tensile strain.

[0074] S9, the temperature is kept at 650±10℃, TMIn, TMGa and PH3 are continuously introduced, Ga x4 In 1-x4 P second quantum well; the Ga x4 In 1-x4 The thickness of the P second quantum well is 5 nm, unintentionally doped, x4 = 0.4, and is under compressive strain.

[0075] S10, the temperature is slowly changed to 700±10℃, TMAl, TMIn, TMGa and PH3 are continuously introduced, (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, by changing the TMAl, TMGa flow, TMIn flow is constant, Al composition gradually, band gap gradually helps to improve the carrier injection efficiency, improve photoelectric conversion efficiency; the (Al x5 Ga 1-x5 )y3 In 1-y3 The thickness of the P upper waveguide layer is 0.15 μm, x5 gradually changes from 0.5 to 0.95, y3=0.5, the doping source is DEZn or DMZn, all doping, and the doping concentration is 4E17 atoms / cm 3 .

[0076] S11, the temperature is kept at 700±10℃, TMAl, TMIn and PH3 are continuously introduced, and P-type Al 0.5 In 0.5 P upper confinement layer-1; the Al 0.5 In 0.5 The doping source of the P upper confinement layer-1 is Cp2Mg and DEZn, the Al 0.5 In 0.5 The thickness of the P upper confinement layer-1 is 0.03 μm, and the doping concentration is 1.2E18 atoms / cm 3 The Cp2Mg doping flow is unchanged, and the DEZn doping flow gradually decreases during the growth process, the delay caused by the Mg doping memory effect is offset by Zn doping and diffusion, a stable and high doping concentration is achieved, and the specific doping flow is referred to the doping concentration design.

[0077] S12, the temperature is kept at 700±10℃, TMAl, TMIn and PH3 are continuously introduced, and P-type Al 0.5 In 0.5 P upper confinement layer-2; the Al 0.5 In 0.5 The doping source of the P upper confinement layer-2 is Cp2Mg, and the doping concentration is 1.2E18 atoms / cm 3 , and the thickness is 0.15 μm.

[0078] S13, the temperature is kept at 700±10℃, TMGa, TMIn and PH3 are continuously introduced, and P-type Ga x6 In 1-x6 P etching stop layer; the Ga x6 In 1-x6 The doping source of the P etching stop layer is Cp2Mg, and the doping concentration is 2E18 atoms / cm 3 , x6=0.55, and the thickness is 10 nm.

[0079] S14, the temperature is kept at 700±10℃, TMAl, TMIn and PH3 are continuously introduced, and P-type Al 0.5 In 0.5 P upper confinement layer-3; the Al 0.5 In 0.5The doping source of the upper transition layer is Cp2Mg, and the doping concentration is 2E18 atoms / cm 3 , and the thickness is 0.9 μm.

[0080] S15, the temperature is gradually changed to 680±10℃, TMIn, TMGa and PH3 are introduced, and Ga 0.5 In 0.5 The upper transition layer is grown on the upper limiting layer-3. 0.5 In 0.5 The doping source of the upper transition layer is Cp2Mg, and the doping concentration is 2E18 atoms / cm 3 , and the thickness is 24 nm.

[0081] S16, the temperature is reduced to 540±10℃, the temperature reduction speed is not more than 40℃ / min, TMGa and AsH3 are continuously introduced, and a GaAs cap layer is grown on the upper transition layer. The thickness of the cap layer is 0.2 μm, the doping source is CBr4 or DEZn, and the doping concentration is 7E19 atoms / cm 3 .

[0082] Example 5

[0083] A preparation method of a magnesium-zinc co-doped AlGaInP red light semiconductor laser device, the steps of which are as described in Example 4, except that in S10, the upper waveguide layer is not entirely doped, and the upper waveguide layer part of 0.1 μm far away from the quantum well is doped, and the doping concentration is gradually changed from 2E17 to 5E17 atoms / cm 3 .

[0084] Example 6

[0085] A preparation method of a magnesium-zinc co-doped AlGaInP red light semiconductor laser device, the steps of which are as described in Example 4, except that in step S2, the doping source of the GaAs buffer layer is Si2H6, and the doping concentration is 2E18 atoms / cm 3 , and the thickness is 0.1 μm. In step S4, the doping source of the Ga 0.5 In 0.5 The doping source of the lower transition layer is Si2H6, and the doping concentration is 2E18 atoms / cm 3 , and the thickness is 0.1 μm. In step S5, the doping source of the Al 0.5 In 0.5 The doping source of the lower limiting layer is Si2H6, and the doping concentration is 7E17 atoms / cm 3 , and the thickness is 0.5 μm. In step S6, the doping source of the (Al 1-x1 Ga x1 ) y1 In 1-y1The thickness of the P lower waveguide layer is 0.05 μm, it is unintentionally doped, x1 = 0.3, y1 = 0.4. In step S7, the Ga x2 In 1-x2 The thickness of the P first quantum well is 4 nm, it is unintentionally doped, x2 = 0.3, it is compressively strained. In step S8, the (Al x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the P barrier layer is 5 nm, it is unintentionally doped, x3 = 0.4, y2 = 0.4, it is tensile strained. In step S9, the Ga x4 In 1-x4 The thickness of the P second quantum well is 4 nm, it is unintentionally doped, x4 = 0.3, it is compressively strained. In step S10, the (Al x5 Ga 1-x5 ) y3 In 1-y3 The thickness of the P upper waveguide layer is 0.05 μm, x5 = 0.45, y3 = 0.4, the doping source is DEZn or DMZn, the doping concentration is 2E17 atoms / cm 3 ; in step S11, the Al 0.5 In 0.5 The doping source of the P upper confinement layer-1 is Cp2Mg and DEZn, the doping concentration is 1E18 atoms / cm 3 , the thickness is 0.02 μm. In step S12, the Al 0.5 In 0.5 The doping source of the P upper confinement layer-2 is Cp2Mg, the doping concentration is 1E18 atoms / cm 3 , the thickness is 0.1 μm. In step S13, the Ga x6 In 1-x6 The doping source of the P etch stop layer is Cp2Mg, the doping concentration is 1.5E18 atoms / cm 3 , x6 = 0.5, the thickness is 8 nm. In step S14, the Al 0.5 In 0.5 The doping source of the P upper confinement layer-3 is Cp2Mg, the doping concentration is 1E18 atoms / cm 3 , the thickness is 0.5 μm. In step S15, the Ga 0.5 In 0.5 The doping source of the P upper transition layer is Cp2Mg, the doping concentration is 1.2E18 atoms / cm 3 , the thickness is 20 nm. In step S16, the thickness of the cap layer is 0.1 μm, the doping source is CBr4, the doping concentration is 4E19 atoms / cm 3 .

[0086] Example 7

[0087] A method for preparing a magnesium-zinc co-doped AlGaInP red light semiconductor laser device, the steps of which are as described in Embodiment 4, except that in step S2, the doping source for the GaAs buffer layer is Si2H6, and the doping concentration is 5E18 atoms / cm 3 , and the thickness is 0.3 μm. In step S4, the doping source for the Ga 0.5 In 0.5 P lower transition layer is Si2H6, and the doping concentration is 5E18 atoms / cm 3 , and the thickness is 0.3 μm; in step S5, the doping source for the Al 0.5 In 0.5 P lower confinement layer is Si2H6, and the doping concentration is 2E18 atoms / cm 3 , and the thickness is 3 μm. In step S6, the (Al 1-x1 Ga x1 ) y1 In 1-y1 P waveguide layer has a thickness of 0.3 μm, is unintentionally doped, x1=1, and y1=0.6. In step S7, the Ga x2 In 1-x2 P first quantum well has a thickness of 7 nm, is unintentionally doped, x2=0.5, and is compressively strained. In step S8, the (Al x3 Ga 1-x3 ) y2 In 1-y2 P barrier layer has a thickness of 15 nm, is unintentionally doped, x3=0.7, y2=0.6, and is tensilely strained. In step S9, the Ga x4 In 1-x4 P second quantum well has a thickness of 7 nm, is unintentionally doped, x4=0.5, and is compressively strained; in step S10, the (Al x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer has a thickness of 0.3 μm, x5=0.95, y3=0.6, the doping source is DEZn or DMZn, and the doping concentration is 6E17 atoms / cm 3 ; in step S11, the doping source for the Al 0.5 In 0.5 P upper confinement layer-1 is Cp2Mg and DEZn, the doping concentration is 2E18 atoms / cm 3 , and the thickness is 0.05 μm. In step S12, the doping source for the Al 0.5 In 0.5 P upper confinement layer-2 is Cp2Mg, the doping concentration is 2E18 atoms / cm 3, thickness is 0.3 μm. In step S13, the Ga x6 In 1-x6 The doping source of the P etching stop layer is Cp2Mg, and the doping concentration is 3E18 atoms / cm 3 , x6=0.7, thickness is 20 nm. In step S14, the Al 0.5 In 0.5 The doping source of the upper limit layer-3 is Cp2Mg, and the doping concentration is 2E18 atoms / cm 3 , thickness is 1.2 μm. In step S15, the Ga 0.5 In 0.5 The doping source of the upper transition layer is Cp2Mg, and the doping concentration is 3E18 atoms / cm 3 , thickness is 40 nm. In step S16, the thickness of the cap layer is 0.5 μm, the doping source is DEZn, and the doping concentration is 1E20 atoms / cm 3 .

[0088] Figure 1 is a structural schematic diagram of the laser device of the present application, Figure 2 is a conventional structural schematic diagram. From the comparison structure, it can be seen that the present application inserts a magnesium-zinc co-doped upper limit layer-1 in the upper limit layer, reduces the linear change of the doping concentration caused by the Mg doping memory effect, and ensures a higher doping concentration of the limit layer; the waveguide layer is doped with Zn, reduces the series resistance, and improves the photoelectric conversion efficiency.

[0089] Figure 3 is the working current of the structure of the laser device of the present application at different temperatures of 50-85℃, Figure 4 is the working current of the conventional structure at different temperatures of 50-85℃. From the test results, it can be seen that the present application adopts a waveguide layer doped with Zn and a limit layer co-doped with Mg and Zn, improves the doping concentration of the limit layer, and reduces the working current at high temperature. Although the current sharply increases at 85℃, the device can still work normally, while the conventional structure fails and cannot work normally at 85℃.

Claims

1. A magnesium-zinc co-doped AlGaInP red semiconductor laser device, characterized in that, From bottom to top, it includes a GaAs substrate, a GaAs buffer layer, a lower transition layer, a lower confinement layer, a lower waveguide layer, a first quantum well, a barrier layer, a second quantum well, and (Al) x5 Ga 1-x5 ) y3 In 1-y3 P upper waveguide layer, Al 0.5 In 0.5 P upper confinement layer-1, Al 0.5 In 0.5 P upper confinement layer-2, Ga x6 In 1-x6 P corrosion termination layer, Al 0.5 In 0.5 P upper confinement layer-3, upper transition layer and cap layer; Where, 0.45≤x5≤0.95, 0.4≤y3≤0.6; 0.5≤x6≤0.7; Among them, (Al) x5 Ga 1-x5 ) y3 In 1-y3 The waveguide layer on P is doped with Zn, with a doping concentration of 2E17-6E17 atoms / cm². 3 Al 0.5 In 0.5 P-confinement layer-1 magnesium-zinc co-doped, doping concentration of 1E18-2E18 atoms / cm³ 3 Al 0.5 In 0.5 P upper confinement layer-2 and Al 0.5 In 0.5 The upper confinement layer-3 of P is doped with Mg, with a doping concentration of 1E18-2E18 atoms / cm³. 3 .

2. The magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 1, characterized in that, The semiconductor laser device includes one or more of the following solutions: I. The lower transition layer is Ga 0.5 In 0.5 P-level transition layer; II. The lower confinement layer is Al 0.5 In 0.5 P-level confinement layer; III. The lower waveguide layer is (Al) x1 Ga 1-x1 ) y1 In 1-y1 Under the waveguide layer of P, 0.3≤x1≤1, 0.4≤y1≤0.6; IV. The first quantum well is Ga x2 In 1-x2 P is the first quantum well, 0.3 ≤ x² ≤ 0.5; V. The barrier layer is (Al) x3 Ga 1-x3 ) y2 In 1-y2 For the P-layer, 0.4 ≤ x³ ≤ 0.7, 0.4 ≤ y² ≤ 0.6; VI. The second quantum well is Ga x4 In 1-x4 P is the second quantum well, 0.3 ≤ x⁴ ≤ 0.5; VII. The upper transition layer is Ga 0.5 In 0.5 P-transition layer; VIII. The cap layer is a GaAs cap layer.

3. A method for preparing the magnesium-zinc co-doped AlGaInP red semiconductor laser device as described in claim 1 or 2, characterized in that, Includes the following steps: S1. Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 720±10℃ for baking, and introduce AsH3 to perform surface heat treatment on the GaAs substrate. S2, the temperature is slowly reduced to 680±10℃, with a cooling rate not exceeding 30℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs buffer layer on the GaAs substrate. S3, the temperature is maintained at 680±10℃, growth is stopped on the GaAs buffer layer, PH3 is introduced, and growth is stopped by stopping the group V source (100% AsH3) and group III source (TMGa). The stoppage lasts for 3 to 30 seconds, and the As atoms in the reaction chamber are exhausted. S4, with the temperature maintained at 680±10℃, TMGa, TMIn, and PH3 are introduced to grow Ga on the GaAs buffer layer. 0.5 In 0.5 P-level transition layer; S5, the temperature is gradually increased to 700±10℃, with a heating rate not exceeding 60℃ / min, and TMAl, TMIn, and PH3 are introduced into the Ga... 0.5 In 0.5 n-type Al grows on the lower transition layer of P. 0.5 In 0.5 P-level confinement layer; S6, the temperature is gradually reduced to 650±10℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow (Al) on the lower confinement layer. x1 Ga 1-x1 ) y1 In 1-y1 In the lower waveguide layer of P, the Al composition is gradually changed by altering the flow rates of TMAl and TMGa while keeping the flow rate of TMIn constant. S7, with the temperature maintained at 650±10℃, continue to introduce TMI, TMGa, and PH3 to grow Ga on the lower waveguide layer. x2 In 1-x2 P-first quantum well; S8, the temperature is maintained at 650±10℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow (Al) on the first quantum well. x3 Ga 1-x3 ) y2 In 1-y2 P-barrier layer; S9, the temperature is maintained at 650±10℃, and TMI, TMGa and PH3 are continuously introduced to grow Ga on the barrier layer. x4 In 1-x4 P-second quantum well; S10, the temperature is gradually reduced to 700±10℃, and TMAl, TMIn, TMGa and PH3 are continuously introduced to grow (Al) on the second quantum well. x5 Ga 1-x5 ) y3 In 1-y3 By changing the flow rates of TMAl and TMGa while keeping the flow rate of TMIn constant in the waveguide layer on P, the Al composition can be gradually varied. S11, with the temperature maintained at 700±10℃, TMA1, TMI, and PH3 are continuously introduced to grow P-type Al on the upper waveguide layer. 0.5 In 0.5 P upper confinement layer -1; S12, with the temperature maintained at 700±10℃, TMAl, TMIn, and PH3 are continuously introduced to grow P-type Al on the upper confinement layer-1. 0.5 In 0.5 P upper confinement layer -2; S13, with the temperature maintained at 700±10℃, TMGa, TMIn, and PH3 are continuously introduced to grow p-type Ga on the upper confinement layer-2. x6 In 1-x6 P-corrosion termination layer; S14, with the temperature maintained at 700±10℃, TMAl, TMIn, and PH3 are continuously introduced to grow P-type Al on the corrosion termination layer. 0.5 In 0.5 P upper confinement layer -3; S15, the temperature is gradually increased to 680±10℃, and TMI, TMGa and PH3 are introduced to grow Ga in the upper confinement layer-3. 0.5 In 0.5 P-transition layer; S16, the temperature is reduced to 540±10℃, the cooling rate is not more than 40℃ / min, and TMGa and AsH3 are continued to be introduced to grow a GaAs cap layer on the upper transition layer.

4. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 3, characterized in that, In step S2, the doping source of the GaAs buffer layer is Si2H6, and the doping concentration is 2E18-5E18 atoms / cm³. 3 The thickness is 0.1-0.3 μm; in step S4, the Ga... 0.5 In 0.5 The doping source for the transition layer under P is Si₂H₆, with a doping concentration of 2E¹⁸-5E¹⁸ atoms / cm². 3 The thickness is 0.1-0.3 μm; in step S5, the Al 0.5 In 0.5 The doping source for the lower confinement layer is Si₂H₆, with a doping concentration of 7E¹⁷-2E¹⁸ atoms / cm². 3 The thickness is 0.5-3 μm; in step S6, the (Al) 1-x1 Ga x1 ) y1 In 1-y1 The thickness of the waveguide layer under P is 0.05-0.3 μm, unintentionally doped, 0.3≤x1≤1, 0.4≤y1≤0.6; in step S7, the Ga x2 In 1-x2 The thickness of the first quantum well (P) is 4-7 nm, unintentionally doped, 0.3 ≤ x² ≤ 0.5, and subjected to compressive strain; in step S8, (Al) x3 Ga 1-x3 ) y2 In 1-y2 The thickness of the P-barrier layer is 5-15 nm, unintentionally doped, with 0.4≤x3≤0.7, 0.4≤y2≤0.6, and subjected to tensile strain; in step S9, the Ga... x4 In 1-x4 The thickness of the second quantum well is 4-7 nm, unintentionally doped, 0.3 ≤ x 4 ≤ 0.5, and subjected to compressive strain; in step S15, the Ga... 0.5 In 0.5 The doping source for the transition layer on P is Cp₂Mg, with a doping concentration of 1.2E¹⁸-3E¹⁸ atoms / cm². 3 The thickness is 20-40 nm; in step S16, the thickness of the cap layer is 0.1-0.5 μm, the doping source is CBr4 or DEZn, and the doping concentration is 4E19-1E20 atoms / cm³. 3 .

5. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 4, characterized in that, In step S2, the GaAs buffer layer has a thickness of 0.2 μm and a doping concentration of 2E18 atoms / cm². 3 In step S4, Ga 0.5 In 0.5 The thickness of the transition layer under P is 0.2 μm, and the doping concentration is 4E18 atoms / cm. 3 In step S5, Al 0.5 In 0.5 The thickness of the P-type confinement layer is 1.5 μm, and the doping concentration is 1.3E18 atoms / cm². 3 In step S6, x1 gradually changes from 0.95 to 0.5, y1=0.5, and the thickness of the lower waveguide layer is 0.15μm; in step S7, x2=0.4, and the thickness of the first quantum well is 5nm; in step S8, x3=0.65, y2=0.42, and the thickness of the barrier layer is 12nm; in step S9, x4=0.4, and the thickness of the second quantum well is 5nm; in step S15, Ga... 0.5 In 0.5 The thickness of the transition layer on P is 24 nm, and the doping concentration is 2E18 atoms / cm². 3 In step S16, the cap layer thickness is 0.2 μm, and the doping concentration is 7E19 atoms / cm². 3 .

6. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 3, characterized in that, In step S10, the (A1) x5 Ga 1-x5 ) y3 In 1-y3 The thickness of the waveguide layer on P is 0.05-0.3 μm, with 0.45≤x5≤0.95 and 0.4≤y3≤0.

6. The doping source is DEZn or DMZn, either fully doped or partially doped away from the quantum well, with a doping concentration of 2E17-6E17 atoms / cm². 3 .

7. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 6, characterized in that, x5 gradually changes from 0.5 to 0.95, y3=0.5, and the thickness of the upper waveguide layer is 0.15μm.

8. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 6, characterized in that, In step S10, when the thickness of the upper waveguide layer is greater than 0.1 μm, the 0.1 μm portion of the upper waveguide layer furthest from the quantum well is doped, with the doping concentration gradually changing from 2E17 to 5E17 atoms / cm². 3 .

9. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 3, characterized in that, In step S11, the Al 0.5 In 0.5 The doping sources for the confinement layer-1 on P are Cp₂Mg and DEZn, with a doping concentration of 1E¹⁸-2E¹⁸ atoms / cm². 3 The thickness is 0.02-0.05μm; During the growth process, the Cp2Mg doping flux remained constant, while the DEZn doping flux gradually decreased.

10. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 3, characterized in that, In step S11, Al 0.5 In 0.5 The thickness of the confinement layer-1 on P is 0.03 μm, and the doping concentration is 1.2E18 atoms / cm². 3 .

11. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 3, characterized in that, In step S12, the Al 0.5 In 0.5 The doping source for the P-confinement layer-2 is Cp₂Mg, with a doping concentration of 1E¹⁸-2E¹⁸ atoms / cm². 3 The thickness is 0.1-0.3 μm; in step S13, the Ga... x6 In 1-x6 The doping source for the P-etch termination layer is Cp₂Mg, with a doping concentration of 1.5E¹⁸-3E¹⁸ atoms / cm². 3 0.5≤x6≤0.7, thickness is 8-20nm; in step S14, the Al 0.5 In 0.5 The doping source for the confinement layer-3 on P is Cp₂Mg, with a doping concentration of 1E¹⁸-2E¹⁸ atoms / cm². 3 The thickness is 0.5-1.2μm.

12. The method for fabricating the magnesium-zinc co-doped AlGaInP red semiconductor laser device according to claim 11, characterized in that, In step S12, Al 0.5 In 0.5 The thickness of the confinement layer-2 on P is 0.15 μm, and the doping concentration is 1.2E18 atoms / cm². 3 In step S13, Ga x6 In 1-x6 The thickness of the P-etching termination layer is 10 nm, and the doping concentration is 2 E18 atoms / cm. 3 x6 = 0.55; In step S14, Al 0.5 In 0.5 The thickness of the confinement layer-3 on P is 0.9 μm, and the doping concentration is 1.2E18 atoms / cm. 3 .

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