A multi-polarization state incident microscopic Raman spectrum stress detection method

Abstract

The present application relates to a kind of multi-polarization incident microscopic raman spectrum stress detection method, belong to optical microscopic measurement technical field;The present application utilizes radial polarized light under high numerical aperture (NA) objective lens incidence to realize the simultaneous excitation and acquisition of longitudinal optical (LO) phonon and transverse optical (TO) phonon in conjunction with polariscope, utilizes angular polarized light under high NA objective lens incidence to realize the independent excitation and acquisition of LO phonon in conjunction with polariscope.Independent excitation LO peak under angular polarized light incidence is used as prior signal, the effective separation of TO peak and LO peak excited by radial polarized light incidence is realized, and then the principle error introduced in the TO peak difficult to excite or difficult to separate from LO peak in the traditional raman spectrum stress detection method is eliminated, and the accurate measurement of microscale three-axis principal stress is realized;The present application effectively improves the stress detection precision of silicon material and gallium arsenide material semiconductor device under complex stress condition.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of optical microscopic measurement, and mainly relates to a multi-polarization-state incident microscopic Raman spectrum stress detection method and device for micro-scale three-axis principal stress detection of semiconductor devices of silicon and gallium arsenide materials. BACKGROUND

[0002] Residual stress is an important factor affecting the performance and reliability of semiconductor devices. By detecting the size of residual stress, the process can be effectively analyzed and improved, and the yield can be improved. Silicon is the largest and most widely used semiconductor material in the world, and more than 90% of semiconductor devices are made of silicon-based materials. As the second generation of semiconductor materials, gallium arsenide has a direct energy gap and excellent photoelectric performance, and its market value is increasing year by year. Therefore, it is of great significance to analyze the stress of silicon and gallium arsenide semiconductor devices. For semiconductor materials such as silicon and gallium arsenide, when there is residual stress, the lattice deformation will cause the Raman shift characteristic peak wavelength to shift relative to the stress-free state. The amount of shift is related to the size of the residual stress. By exciting and detecting the Raman spectrum signal of the semiconductor device, the stress can be effectively analyzed. The microscopic Raman spectrum stress detection method couples the Raman spectrometer with the microscope, and excites and collects the Raman signal of the sample to be measured through the microscope objective. It can obtain extremely high spectral resolution at the microscale. Compared with other existing stress detection methods, it has obvious advantages such as non-destructive testing, high sensitivity, and good repeatability. It has become a mainstream method for studying the micro-scale mechanical behavior of semiconductor devices.

[0003] Silicon and gallium arsenide belong to diamond structure and zinc blende structure semiconductor materials respectively, both of which contain three active Raman peaks (two transverse optical (TO) peaks and one longitudinal optical (LO) peak). In the stress-free state, the three spectral peaks are degenerate, and when there is stress, the three spectral peaks will shift to different degrees. Under a low numerical aperture (NA) objective, the axial component of the light field in the focal region is weak, making it difficult to excite TO phonons; although TO phonons and LO phonons can be excited simultaneously under a high-NA objective, it is difficult to achieve effective separation of the spectral peaks due to the close proximity of the TO and LO peaks. Therefore, existing microscopic Raman spectrum stress detection techniques are mostly based on the assumption of uniaxial or equal biaxial stress, that is, only the uniaxial principal stress component of the stress tensor is not zero, or only two principal stress components are not zero and equal. In this way, only the LO peak that is easiest to excite needs to be obtained to analyze the stress. The microscopic Raman spectrum stress detection method based on the assumption of uniaxial or equal biaxial stress has high detection accuracy in simple stress conditions, but has large principle error in complex stress conditions with three-axis principal stress existing simultaneously, making it difficult to accurately characterize the actual stress conditions. The structure design and packaging process of current semiconductor devices are becoming increasingly complex, and complex residual stress problems are becoming increasingly prominent. The existing method is difficult to meet the demand for accurate detection of complex stress.

[0004] Therefore, a key technical problem urgently needed to be solved in the current art is how to realize micro-scale triaxial principal stress detection of silicon material and gallium arsenide material semiconductor devices and improve stress detection accuracy thereof under complex stress conditions. SUMMARY

[0005] In order to overcome the deficiencies in the prior art, the present application provides a multi-polarization-state incident microscopic Raman spectrum stress detection method. The present application realizes simultaneous excitation and acquisition of longitudinal optical (LO) phonon and transverse optical (TO) phonon by using radial polarization light incidence under a high numerical aperture (NA) objective lens in combination with a polarizer, and realizes independent excitation and acquisition of LO phonon by using angular polarization light incidence under a high NA objective lens in combination with a polarizer. The LO peak excited under angular polarization light incidence is used as a prior signal to realize effective separation of the TO peak and the LO peak simultaneously excited under radial polarization light incidence, thereby eliminating the principle error introduced by the difficulty in exciting the TO peak or the difficulty in separating the TO peak from the LO peak in the conventional Raman spectrum stress detection method, and realizing accurate measurement of micro-scale triaxial principal stress. A half-wave plate plus S-wave plate polarization conversion device is introduced into the system to quickly convert linearly polarized light into radial polarization light or angular polarization light. A ring aperture diaphragm is arranged in front of the S-wave plate to suppress the low NA component of the incident light beam and improve the excitation efficiency of the TO phonon. The present application effectively improves the stress detection accuracy of silicon material and gallium arsenide material semiconductor devices under complex stress conditions.

[0006] To achieve the above object, the present application adopts the following technical solutions:

[0007] The present application provides a multi-polarization-state incident microscopic Raman spectrum stress detection device, characterized in that the device comprises: a laser, a polarizer, a half-wave plate, a collimating and expanding system, an S-wave plate, a ring aperture diaphragm, a beam splitter, a high numerical aperture objective lens, a sample, a two-dimensional displacement table, a mirror, a polarizer, a focusing lens, an optical fiber, a CT grating spectrometer, and an EMCCD camera.

[0008] The connection relationship of the above-mentioned components is as follows: the optical center of all optical components coincides with the optical axis formed by the central light beam of the incident laser and the Raman signal, and all lenses are perpendicular to the optical axis; wherein: the laser exit end is sequentially placed with the polarizer, the half-wave plate, the collimating and expanding system, the S-wave plate, and the ring aperture diaphragm; the ring aperture diaphragm exit end is placed with the beam splitter; the beam splitter reflection end is placed with the high numerical aperture objective lens; the sample is placed on the two-dimensional displacement table and aligned with the front focal plane of the objective lens; and the Raman signal detection path is sequentially placed with the mirror, the high-pass filter, the polarizer, the focusing lens, the optical fiber, the CT grating spectrometer, and the EMCCD camera.

[0009] Further, the wavelength of the laser exit is 532 nanometers, and the line width is less than 1 MHz.

[0010] Further, the half-wave plate and the S-wave plate jointly constitute a polarization conversion system.

[0011] Further, a ring aperture stop is arranged at the exit end of the S-wave plate.

[0012] Further, the polarizer is used to realize polarization direction selection of the detected Raman signal.

[0013] Further, the optical fiber is a signal collection input port, and the optical fiber also has a “pinhole” function in the confocal microscopic imaging system, which can block stray light from entering the spectrometer and effectively improve the confocality of the system. The optical fiber “pinhole” and the sample detection point are conjugate with respect to the system.

[0014] A multi-polarization state incident microscopic Raman spectrum stress detection method, characterized by comprising the following steps:

[0015] (1) the laser beam is converted into linearly polarized light with high polarization ratio by a polarizer;

[0016] (2) the linearly polarized light with high polarization ratio is converted into a specified angle by a half-wave plate;

[0017] (3) the light beam emitted from the half-wave plate is incident on an S-wave plate after collimation and expansion, and when the vector polarization direction coincides with the fast axis of the S-wave plate, the light beam is shaped into radial polarization light, and when the vector polarization direction coincides with the slow axis of the S-wave plate, the light beam is shaped into angular polarization light. The polarization conversion system composed of the half-wave plate and the S-wave plate realizes multi-polarization state selection of the incident polarization vector;

[0018] (4) the light beam emitted from the S-wave plate passes through a ring aperture stop to form a hollow ring-shaped beam, which is used to suppress low numerical aperture components in the incident light beam;

[0019] (5) the ring-shaped beam is reflected by a beam splitter to the back surface of a high numerical aperture objective, and the ring-shaped beam is focused by the high numerical aperture objective to excite Raman signals from a sample;

[0020] (6) the Raman signals carrying stress information of the sample and the Rayleigh scattering signals without stress information are collected by the same high numerical aperture objective, the collected light beam is filtered to remove most of the Rayleigh scattering signals by the beam splitter, the light beam is reflected by a mirror into a high-pass filter to remove residual Rayleigh scattering signals, and the light beam emitted from the high-pass filter only contains Raman signals;

[0021] (7) the light beam emitted from the high-pass filter is incident on a polarizer, and the light transmission axis direction of the polarizer is rotated to realize polarization direction selection of the detected Raman signal;

[0022] (8) the Raman signal emitted from the polarizer is coupled into an optical fiber by a focusing lens, dispersed by a CT grating spectrometer, and then enters an EMCCD camera, and the EMCCD camera is used to record optical phonon signals excited under different polarization states of incidence.

[0023] (9) Set the incident light beam as radial polarization light, and select to realize the simultaneous excitation of transverse optical TO phonon and longitudinal optical LO phonon by polarization detection of the analyzer; for

[001] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to

[010] crystal direction to realize the simultaneous excitation of LO1 phonon and TO phonon, and set the direction of the analyzer transparent axis parallel to

[100] crystal direction to realize the simultaneous excitation of LO2 phonon and TO phonon; for

[100] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to

[010] crystal direction to realize the simultaneous excitation of LO1 phonon and TO phonon, and set the direction of the analyzer transparent axis parallel to

[001] crystal direction to realize the simultaneous excitation of LO2 phonon and TO phonon; for

[110] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [-110] crystal direction to realize the simultaneous excitation of LO1 phonon and TO phonon, and set the direction of the analyzer transparent axis parallel to

[001] crystal direction to realize the simultaneous excitation of LO2 phonon and TO phonon;

[0024] (10) Set the incident light beam as angular polarization light, and select to realize the independent excitation of LO phonon by polarization detection of the analyzer; for

[001] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to

[010] or

[100] crystal direction to realize the independent excitation of LO phonon; for

[100] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to

[010] or

[001] crystal direction to realize the independent excitation of LO phonon; for

[110] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [-110] or

[001] crystal direction to realize the independent excitation of LO phonon;

[0025] (11) Use the EMCCD camera to record the optical phonon signals excited under different polarization states of incidence, take the LO peak excited under angular polarization light as the prior signal, record the peak position of the LO peak as ω3, separate TO1 peak and TO2 peak from the mode of simultaneous excitation of LO peak and TO peak, record the peak position of TO1 peak as ω1, and record the peak position of TO2 peak as ω2, and calculate the Raman shift displacement amounts Δω1, Δω2 and Δω3 of the excited phonon by the formula Δω i = ω i - ω0 respectively; in the formula, ω0 is the Raman shift wave number of the sample material in the stress-free state, which should be calibrated before measurement;

[0026] (12) For

[001] crystal plane silicon material and gallium arsenide material semiconductor devices, the relationship between the Raman shift and the three-axis principal stress is given by the following formula:

[0027]

[0028] For

[100] crystal plane silicon material and gallium arsenide material semiconductor device, the relationship between Raman shift and three-axis principal stress is given by the following formula:

[0029]

[0030] For

[110] crystal plane silicon material and gallium arsenide material semiconductor device, the relationship between Raman shift and three-axis principal stress is given by the following formula:

[0031]

[0032] By solving the equation, the three-axis principal stress σ 11 , σ 22 , σ 33 of the sample to be measured can be obtained; in the formula, p, q, r are phonon deformation potential constants, S 11 , S 12 , S 44 are elastic compliance constants; for silicon material, p=-1.85ω0 2 , q=-2.31ω0 2 , r=-0.71ω0 2 , S 11 =7.68×10 -6 MPa -1 , S 12 =-2.14×10 -6 MPa -1 , S 44 =12.6×10 -6 MPa -1 ; for gallium arsenide material, p=-2.4ω0 2 , q=-2.7ω0 2 , r=-0.9ω0 2 , S 11 =11.7×10 -6 MPa -1 , S 12 =-3.66×10 -6 MPa -1 , S 44 =16.8×10 -6 MPa -1 .

[0033] The amplitude modulation described in the application is amplitude modulation by using hyperbolic sine-Gaussian function through computer control amplitude spatial light modulator, and the best modulation is realized by optimizing the parameters of hyperbolic sine-Gaussian function.

[0034] The multi-polarization state incident microscopic Raman spectrum stress detection method has the characteristics that the independent excitation of LO optical phonons is realized by the incidence of the angular polarization light under the high numerical aperture objective lens combined with the polarizer; and the simultaneous excitation of TO phonons and LO phonons is realized by the incidence of the radial polarization light under the high numerical aperture objective lens combined with the polarizer.

[0035] The multi-polarization state incident microscopic Raman spectrum stress detection method has the characteristics that the effective separation of the LO peak and the TO peak is realized by taking the LO peak excited by the incidence of the angular polarization light as the prior signal.

[0036] The multi-polarization state incident microscopic Raman spectrum stress detection method has the characteristics that the effective separation of the LO peak and the TO peak is realized by taking the LO peak excited by the incidence of the angular polarization light as the prior signal. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 It is a schematic diagram of the multi-polarization state incident microscopic Raman spectrum stress detection method and device.

[0038] In the figure, 1 is a laser, 2 is a polarizer, 3 is a half-wave plate, 4 is a collimating and expanding system, 5 is an S wave plate, 6 is a ring aperture diaphragm, 7 is a beam splitter, 8 is a high numerical aperture objective lens, 9 is a sample, 10 is a two-dimensional displacement table, 11 is a mirror, 12 is a polarizer, 13 is a focusing lens, 14 is an optical fiber, 15 is a CT type grating spectrometer, and 16 is an EMCCD camera.

[0039] Figure 2 It is a schematic diagram of the simultaneous excitation of the LO peak and the TO peak by using the radial polarization incidence.

[0040] Figure 3 It is a schematic diagram of the independent excitation of the LO peak by using the angular polarization incidence. DETAILED DESCRIPTION

[0041] The embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0042] As Figure 1As shown, the present application provides a multi-polarization state incident microscopic Raman spectrum stress detection device. The device comprises a laser 1, a polarizer 2, a half-wave plate 3, a collimating beam expander system 4, an S-wave plate 5, a ring aperture diaphragm 6, a beam splitter 7, a high numerical aperture objective 8, a sample 9, a two-dimensional displacement table 10, a mirror 11, an analyzer 12, a focusing lens 13, an optical fiber 14, a CT grating spectrometer 15, and an EMCCD camera 16. The connection relationship of the above-mentioned devices is as follows: the optical center of all optical elements coincides with the optical axis formed by the center beam of the incident laser and the Raman signal, and all lenses are perpendicular to the optical axis; wherein: the laser exit end is sequentially placed with the polarizer, the half-wave plate, the collimating beam expander system, the S-wave plate, and the ring aperture diaphragm; the ring aperture diaphragm exit end is placed with the beam splitter; the beam splitter reflection end is placed with the high numerical aperture objective; the sample is placed on the two-dimensional displacement table and is aligned with the front focal plane of the objective; and the Raman signal detection path is sequentially placed with the mirror, the high-pass filter, the analyzer, the focusing lens, the optical fiber, the CT grating spectrometer, and the EMCCD camera.

[0043] The present application provides a multi-polarization state incident microscopic Raman spectrum stress detection method, which comprises the following steps:

[0044] (1) The laser exit beam passes through the polarizer to form high polarization ratio linearly polarized light;

[0045] (2) The high polarization ratio linearly polarized light passes through the half-wave plate modulation to change the vector polarization direction to a specified angle;

[0046] (3) The half-wave plate exit beam passes through the collimating beam expander system and then enters the S-wave plate, when the vector polarization direction coincides with the fast axis of the S-wave plate, the beam is shaped into radial polarization light, and when the vector polarization direction coincides with the slow axis of the S-wave plate, the beam is shaped into angular polarization light, and the polarization conversion system composed of the half-wave plate and the S-wave plate realizes the multi-polarization state selection of the incident polarization vector;

[0047] (4) The S-wave plate exit beam passes through the ring aperture diaphragm to form a hollow ring beam, which is used to suppress the low numerical aperture component in the incident beam;

[0048] (5) The ring beam is reflected by the beam splitter to the back end surface of the high numerical aperture objective, and the Raman signal of the sample is excited by the high numerical aperture objective;

[0049] (6) The Raman signal carrying the stress information of the sample and the Rayleigh scattering signal without stress information are collected by the same high numerical aperture objective, the collected beam is filtered to remove most of the Rayleigh scattering signal by the beam splitter, the residual Rayleigh scattering signal is removed by the mirror, and the high-pass filter only contains the Raman signal;

[0050] (7) The light transmission axis direction of the analyzer is set to rotate to realize the directional detection selection of the Raman signal polarization direction of the high-pass filter exit.

[0051] (8) The Raman signal emitted by the polarizer is coupled into the optical fiber by the focusing lens, dispersed by the CT grating spectrometer, and then enters the EMCCD camera. The EMCCD camera is used to record the optical phonon signals excited under different polarization states of incidence;

[0052] (9) As shown in Figure 2 , the incident light beam is set to be radially polarized light, and the simultaneous excitation of transverse optical TO phonons and longitudinal optical LO phonons is realized by combining the polarization detection of the polarizer. For a semiconductor device with a

[001] crystal surface, the direction of the polarizer's transparent axis is parallel to the

[010] crystal direction, the simultaneous excitation of LO1 phonons and TO phonons is realized, and the direction of the polarizer's transparent axis is parallel to the

[100] crystal direction, the simultaneous excitation of LO2 phonons and TO phonons is realized. For a semiconductor device with a

[100] crystal surface, the direction of the polarizer's transparent axis is parallel to the

[010] crystal direction, the simultaneous excitation of LO1 phonons and TO phonons is realized, and the direction of the polarizer's transparent axis is parallel to the

[001] crystal direction, the simultaneous excitation of LO2 phonons and TO phonons is realized. For a semiconductor device with a

[110] crystal surface, the direction of the polarizer's transparent axis is parallel to the [-110] crystal direction, the simultaneous excitation of LO1 phonons and TO phonons is realized, and the direction of the polarizer's transparent axis is parallel to the

[001] crystal direction, the simultaneous excitation of LO2 phonons and TO phonons is realized.

[0053] (10) As shown in Figure 3 , the incident light beam is set to be angularly polarized light, and the independent excitation of LO phonons is realized by combining the polarization detection of the polarizer. For a semiconductor device with a

[001] crystal surface, the direction of the polarizer's transparent axis is parallel to the

[010] or

[100] crystal direction, the independent excitation of LO phonons is realized. For a semiconductor device with a

[100] crystal surface, the direction of the polarizer's transparent axis is parallel to the

[010] or

[001] crystal direction, the independent excitation of LO phonons is realized. For a semiconductor device with a

[110] crystal surface, the direction of the polarizer's transparent axis is parallel to the [-110] or

[001] crystal direction, the independent excitation of LO phonons is realized.

[0054] (11) As shown in Figure 2 and Figure 3 , the LO peak position excited under radial polarization incidence is the same as the LO peak position excited under angular polarization incidence. The EMCCD camera is used to record the optical phonon signals excited under different polarization states of incidence. The LO peak excited under angularly polarized light is taken as the prior signal, and the peak position of the LO peak is recorded as ω3. From the mode of simultaneous excitation of LO peak and TO peak, TO1 peak and TO2 peak are separated out, the peak position of TO1 peak is recorded as ω1, and the peak position of TO2 peak is recorded as ω2. Through the formula Δω i = ω i- ω0 respectively calculate the Raman shift offset Δω1, Δω2, Δω3 of the excited phonon; in the formula, ω0 is the Raman shift wave number of the sample material in the stress-free state, which should be calibrated before the measurement starts;

[0055] (12) For the

[001] crystal plane silicon material and gallium arsenide material semiconductor devices, the relationship between the Raman shift and the three principal stresses is given by the following formula:

[0056]

[0057] For the

[100] crystal plane silicon material and gallium arsenide material semiconductor devices, the relationship between the Raman shift and the three principal stresses is given by the following formula:

[0058]

[0059] For the

[110] crystal plane silicon material and gallium arsenide material semiconductor devices, the relationship between the Raman shift and the three principal stresses is given by the following formula:

[0060]

[0061] By solving the relationship, the three principal stresses σ 11 , σ 22 , σ 33 of the sample to be measured can be obtained; in the formula, p, q, r are phonon deformation potential constants, S 11 , S 12 , S 44 are elastic compliance constants; for silicon material, p = -1.85ω0 2 , q = -2.31ω0 2 , r = -0.71ω0 2 , S 11 = 7.68 × 10 -6 MPa -1 , S 12 = -2.14 × 10 -6 MPa -1 , S 44 = 12.6 × 10 -6 MPa -1 ; for gallium arsenide material, p = -2.4ω0 2 , q = -2.7ω0 2 , r = -0.9ω0 2 , S 11 = 11.7 × 10 -6 MPa -1 , S 12 = -3.66 × 10 -6 MPa -1 , S 44 = 16.8 × 10 -6MPa -1 .

[0062] In this embodiment, the laser has an exit wavelength of 532 nm and a line width of less than 1 MHz.

[0063] The half-wave plate and the S-wave plate jointly constitute a polarization conversion system.

[0064] An annular aperture stop is arranged at the exit end of the S-wave plate.

[0065] The polarizer is used to realize polarization direction selection of a detected Raman signal.

[0066] The optical fiber is a signal collection input port, and the optical fiber also has a "pinhole" function in the confocal microscopic imaging system, can block stray light from entering the spectrometer, and effectively improve the confocality of the system. The optical fiber "pinhole" and the sample detection point are conjugate relative to the system.

[0067] The multi-polarization state incident microscopic Raman spectrum stress detection method and device are described in detail above. The present application is not limited to the above best embodiment. For those skilled in the art, according to the idea of the present application, the specific embodiment and the application range can be changed, and these changes should belong to the protection scope of the appended claims of the present application. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A multi-polarization state incident micro-Raman spectroscopy stress detection method, characterized in that: The multi-polarization state incident microscopic Raman spectrum stress detection method is realized by a multi-polarization state incident microscopic Raman spectrum stress detection device, and the device comprises a laser, a polarizer, a half-wave plate, a collimating and expanding system, an S-wave plate, a ring aperture diaphragm, a beam splitter, a high numerical aperture objective, a sample, a two-dimensional displacement table, a mirror, an analyzer, a focusing lens, an optical fiber, a CT grating spectrometer and an EMCCD camera. The laser emits light through the polarizer, the half-wave plate, the collimating and expanding system, the S-wave plate and the ring aperture diaphragm in sequence; the ring aperture diaphragm emits light through the beam splitter; the beam splitter reflects light through the high numerical aperture objective; the sample is placed on the two-dimensional displacement table and is aligned with the front focal plane of the objective; the Raman signal detection path comprises the mirror, the high-pass filter, the analyzer, the focusing lens, the optical fiber, the CT grating spectrometer and the EMCCD camera in sequence; the optical center of all optical elements is coincident with the optical axis formed by the central beam of the incident laser and the Raman signal, and all lenses are perpendicular to the optical axis. The laser emits light with a wavelength of 532 nm and a line width of less than 1 MHz. The half-wave plate and the S-wave plate jointly form a polarization conversion system. The S-wave plate emits light through the ring aperture diaphragm. The analyzer is used to realize the polarization direction selection of the detected Raman signal. The optical fiber is used as the signal collection input port, and the optical fiber has the function of "pinhole" in the confocal microscopic imaging system, which can block stray light from entering the spectrometer and effectively improve the confocal property of the system. The optical fiber "pinhole" and the sample detection point are conjugate relative to the system. The multi-polarization state incident microscopic Raman spectrum stress detection method comprises the following steps: (1) The laser emits light through the polarizer to form linearly polarized light with a high polarization ratio; (2) The linearly polarized light with a high polarization ratio passes through the half-wave plate to change the vector polarization direction to a specified angle; (3) The light emitted by the half-wave plate passes through the collimating and expanding system and then enters the S-wave plate. When the vector polarization direction is coincident with the fast axis of the S-wave plate, the light beam is shaped into radial polarization light. When the vector polarization direction is coincident with the slow axis of the S-wave plate, the light beam is shaped into angular polarization light. The polarization conversion system formed by the half-wave plate and the S-wave plate realizes the multi-polarization state selection of the incident polarization vector; (4) The light emitted by the S-wave plate passes through the ring aperture diaphragm to form a hollow ring beam, which is used to suppress the low numerical aperture component in the incident light beam; (5) The ring beam is reflected by the beam splitter to the back surface of the high numerical aperture objective, and the ring beam is focused by the high numerical aperture objective to excite the Raman signal of the sample; (6) The Raman signal carrying the stress information of the sample and the Rayleigh scattering signal without stress information are collected by the same high numerical aperture objective. The collected light beam is filtered by the beam splitter to remove most of the Rayleigh scattering signal, and then the light beam is reflected by the mirror to enter the high-pass filter to remove the residual Rayleigh scattering signal. The light beam emitted by the high-pass filter only contains the Raman signal; (7) The transmission axis direction of the analyzer is set to be rotatable to realize the directional detection selection of the polarization direction of the Raman signal emitted by the high-pass filter; (8) The Raman signal emitted by the analyzer is coupled into the optical fiber by the focusing lens, dispersed by the CT grating spectrometer and then enters the EMCCD camera. (9) Set the incident light beam as radial polarization light, combined with the polarization detection of the analyzer to select the simultaneous excitation of transverse optical TO phonon and longitudinal optical LO phonon; for [001] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [010] crystal direction to realize the simultaneous excitation of LO1 phonon and TO phonon, set the direction of the analyzer transparent axis parallel to [100] crystal direction to realize the simultaneous excitation of LO2 phonon and TO phonon; for [100] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [010] crystal direction to realize the simultaneous excitation of LO1 phonon and TO phonon, set the direction of the analyzer transparent axis parallel to [001] crystal direction to realize the simultaneous excitation of LO2 phonon and TO phonon; for [110] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [-110] crystal direction to realize the simultaneous excitation of LO1 phonon and TO phonon, set the direction of the analyzer transparent axis parallel to [001] crystal direction to realize the simultaneous excitation of LO2 phonon and TO phonon; (10) Set the incident light beam as angular polarization light, combined with the polarization detection of the analyzer to select the independent excitation of LO phonon; for [001] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [010] or [100] crystal direction to realize the independent excitation of LO phonon; for [100] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [010] or [001] crystal direction to realize the independent excitation of LO phonon; for [110] crystal plane semiconductor device, set the direction of the analyzer transparent axis parallel to [-110] or [001] crystal direction to realize the independent excitation of LO phonon; (11) using EMCCD camera to record the optical phonon signal excited under different polarization states of incident light, taking the LO peak excited under the incident of angular polarization light as the prior signal, recording the peak position of the LO peak as ω3, separating the TO1 peak and the TO2 peak from the mode excited simultaneously with the LO peak and the TO peak, recording the peak position of the TO1 peak as ω1, and recording the peak position of the TO2 peak as ω2, and calculating the Raman shift displacement amount Δω1, Δω2, Δω3 of the excited phonon through the formula Δω i = ω i - ω0 respectively; wherein ω0 is the Raman shift wave number of the sample material in the stress-free state, which should be calibrated before the measurement starts; (12) For [001] crystal plane silicon material and gallium arsenide material semiconductor device, the relationship between Raman shift and three-axis principal stress is given by the following formula: For [100] crystal plane silicon material and gallium arsenide material semiconductor device, the relationship between Raman shift and three-axis principal stress is given by the following formula: For [110] crystal plane silicon material and gallium arsenide material semiconductor device, the relationship between Raman shift and three-axis principal stress is given by the following formula: By solving the equation, the three principal stresses σ 11 , σ 22 , σ 33 of the sample to be measured can be obtained; in the formula, p, q, r are phonon deformation potential constants, S 11 , S 12 , S 44 are elastic compliance constants; for silicon material, p = -1.85ω0 2 , q = -2.31ω0 2 , r = -0.71ω0 2 , S 11 = 7.68×10 -6 MPa -1 , S 12 = -2.14×10 -6 MPa -1 , S 44 = 12.6×10 -6 MPa -1 ; for gallium arsenide material, p = -2.4ω0 2 , q = -2.7ω0 2 , r = -0.9ω0 2 , S 11 = 11.7×10 -6 MPa -1 , S 12 = -3.66×10 -6 MPa -1 , S 44 = 16.8×10 -6 MPa -1 .

2. The multi-polarization state incident micro-Raman spectroscopy stress detection method of claim 1, wherein Through the high numerical aperture objective under angular polarization light incidence combined with the analyzer to realize the independent excitation of LO optical phonon; through the high numerical aperture objective under radial polarization light incidence combined with the analyzer to realize the simultaneous excitation of TO phonon and LO phonon.

3. The multi-polarization state incident micro-Raman spectroscopy stress detection method of claim 1, wherein Through the LO peak excited under angular polarization light incidence as a priori signal, the effective separation of LO peak and TO peak is realized.

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