Polysilicon reduction furnace power supply voltage control method and device and computer equipment

Abstract

The application relates to a voltage control method and device of a polysilicon reduction furnace power supply, computer equipment, a storage medium and a computer program product. The method comprises the following steps: determining a corresponding initial current according to a current stage of the polysilicon reduction furnace power supply, obtaining measurement data of polysilicon, calculating a voltage deviation value according to the initial current and the measurement data of polysilicon, obtaining an expected voltage according to the voltage deviation value and the measurement data of polysilicon, obtaining a target voltage according to a working mode of the polysilicon reduction furnace power supply and the expected voltage, and performing voltage control on the polysilicon reduction furnace power supply according to the target voltage. The method can provide corresponding accurate voltages for polysilicon in different growth processes.

Description

Technical Field

[0001] This application relates to the field of electrical control technology, and in particular to a voltage control method, apparatus, computer equipment, computer-readable storage medium, and computer program product for a polysilicon reduction furnace power supply. Background Technology

[0002] Current polysilicon production typically employs a polysilicon reduction furnace to apply current and voltage to polysilicon for reduction growth. During the growth process, the resistance of the polysilicon changes significantly. Initially, the resistance of unbroken polysilicon may reach several megaohms; after breakdown, it starts at around one hundred ohms, then slowly decreases to 1-2 ohms within a week with heating. To ensure continuous and stable voltage and current during this long process, the polysilicon reduction furnace power supply needs to provide a consistently stable output voltage based on the different growth stages of the polysilicon.

[0003] Currently, a single control circuit is typically used, and operators manually adjust it based on historical production experience, or maintain a single controlled voltage throughout the entire polysilicon growth process. The power supply to the polysilicon reduction furnace cannot automatically output the corresponding voltage according to the polysilicon growth process, resulting in insufficient accuracy and reliability in providing voltages for polysilicon at different growth stages. Summary of the Invention

[0004] Therefore, it is necessary to provide a voltage control method, apparatus, computer equipment, computer-readable storage medium, and computer program product for a polycrystalline silicon reduction furnace power supply that can provide accurate voltages to polycrystalline silicon in different growth processes, in order to address the above-mentioned technical problems.

[0005] In a first aspect, this application provides a voltage control method for a polysilicon reduction furnace power supply, the method comprising:

[0006] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0007] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0008] The expected voltage is obtained based on the voltage deviation value and the measurement data of the polycrystalline silicon;

[0009] The target voltage is obtained based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage.

[0010] The power supply to the polysilicon reduction furnace is voltage controlled according to the target voltage.

[0011] In one embodiment, acquiring measurement data of the polycrystalline silicon and calculating the voltage deviation value based on the initial current and the measurement data of the polycrystalline silicon includes:

[0012] Acquire measurement data of polycrystalline silicon, and obtain the real-time resistance of polycrystalline silicon based on the measurement data of polycrystalline silicon;

[0013] The equivalent initial voltage is obtained based on the real-time resistance of the polysilicon and the initial current.

[0014] The voltage deviation value is obtained based on the equivalent initial voltage and the measurement data of the polycrystalline silicon.

[0015] In one embodiment, the measurement data of the polycrystalline silicon includes the real-time current and real-time voltage of the polycrystalline silicon. The step of acquiring the measurement data of the polycrystalline silicon and obtaining the real-time resistance of the polycrystalline silicon based on the measurement data includes:

[0016] The real-time current and real-time voltage of the polycrystalline silicon are obtained, and the real-time resistance of the polycrystalline silicon is obtained based on the real-time current and real-time voltage of the polycrystalline silicon.

[0017] The step of obtaining the voltage deviation value based on the equivalent initial voltage and the measurement data of the polycrystalline silicon includes:

[0018] The voltage deviation value is obtained based on the equivalent initial voltage and the real-time voltage of the polycrystalline silicon.

[0019] In one embodiment, obtaining the expected voltage based on the voltage deviation value and the measurement data of the polysilicon includes:

[0020] The adjustment parameters are obtained based on the measurement data of the polycrystalline silicon and the preset current threshold.

[0021] The expected voltage is obtained based on the voltage deviation value and the adjustment parameters.

[0022] In one embodiment, before obtaining the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage, the method further includes:

[0023] The real-time resistance of the polycrystalline silicon is obtained based on the measurement data of the polycrystalline silicon.

[0024] The equivalent initial voltage is obtained based on the real-time resistance of the polysilicon and the initial current.

[0025] The operating mode of the polysilicon reduction furnace power supply is determined based on the equivalent initial voltage and each preset voltage threshold.

[0026] In one embodiment, the operating modes include a single-layer operating mode, a multi-layer operating mode, and a limited-amplitude operating mode, and the step of obtaining the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage includes any one of the following:

[0027] First item,

[0028] When the operating mode is a single-layer operation mode, the target voltage is obtained according to the expected voltage and the first correspondence.

[0029] The second item,

[0030] When the operating mode is the stacked operation mode, the target voltage is obtained according to the expected voltage and the second correspondence.

[0031] The third item,

[0032] When the operating mode is the amplitude limiting mode, the expected voltage is limited according to the preset amplitude to obtain the target voltage.

[0033] In one embodiment, determining the corresponding initial current based on the current stage of the polysilicon reduction furnace power supply includes:

[0034] Acquire historical data packets; the historical data packets include the historical initial current of the polysilicon reduction furnace power supply;

[0035] From the historical initial currents, select the initial current that corresponds to the current stage of the polysilicon reduction furnace power supply.

[0036] Secondly, this application also provides a voltage control device for a polysilicon reduction furnace power supply, the device comprising:

[0037] The initial output module is used to determine the corresponding initial current based on the current stage of the power supply to the polysilicon reduction furnace.

[0038] The deviation calculation module is used to acquire the measurement data of polysilicon and calculate the voltage deviation value based on the initial current and the measurement data of polysilicon.

[0039] An adjustment module is used to obtain the expected voltage based on the voltage deviation value and the measurement data of the polycrystalline silicon;

[0040] The conditioning output module is used to obtain the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage.

[0041] The control module is used to control the voltage of the power supply for the polysilicon reduction furnace according to the target voltage.

[0042] Thirdly, this application also provides a computer device. The computer device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to perform the following steps:

[0043] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0044] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0045] The expected voltage is obtained based on the voltage deviation value and the measurement data of the polycrystalline silicon;

[0046] The target voltage is obtained based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage.

[0047] The power supply to the polysilicon reduction furnace is voltage controlled according to the target voltage.

[0048] Fourthly, this application also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program thereon, which, when executed by a processor, performs the following steps:

[0049] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0050] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0051] The expected voltage is obtained based on the voltage deviation value and the measurement data of the polycrystalline silicon;

[0052] The target voltage is obtained based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage.

[0053] The power supply to the polysilicon reduction furnace is voltage controlled according to the target voltage.

[0054] Fifthly, this application also provides a computer program product. The computer program product includes a computer program that, when executed by a processor, performs the following steps:

[0055] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0056] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0057] The expected voltage is obtained based on the voltage deviation value and the measurement data of the polycrystalline silicon;

[0058] The target voltage is obtained based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage.

[0059] The power supply to the polysilicon reduction furnace is voltage controlled according to the target voltage.

[0060] The aforementioned voltage control method, apparatus, computer equipment, computer-readable storage medium, and computer program product for a polysilicon reduction furnace power supply determine the corresponding initial current based on the current stage of the polysilicon reduction furnace power supply, acquire polysilicon measurement data, calculate the voltage deviation value based on the initial current and polysilicon measurement data, obtain the expected voltage based on the voltage deviation value and polysilicon measurement data, obtain the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage, and then control the voltage of the polysilicon reduction furnace power supply based on the target voltage. Based on the current stage of the polysilicon reduction furnace power supply, the initial current is determined, and polysilicon is measured based on the initial current to acquire polysilicon measurement data. The target voltage is obtained by combining the initial current, polysilicon measurement data, and the operating mode of the polysilicon reduction furnace power supply, and the voltage of the polysilicon reduction furnace power supply is controlled based on the target voltage. This provides accurate voltages for polysilicon at different growth processes. Attached Figure Description

[0061] Figure 1 This is an application environment diagram of a voltage control method for a polysilicon reduction furnace power supply in one embodiment;

[0062] Figure 2 This is a schematic flowchart of a voltage control method for a polysilicon reduction furnace power supply in one embodiment;

[0063] Figure 3 This is a flowchart illustrating the steps of obtaining measurement data of polysilicon and calculating the voltage deviation value based on the initial current and the measurement data of polysilicon in one embodiment.

[0064] Figure 4 A flowchart illustrating the steps of obtaining measurement data of polysilicon and calculating the voltage deviation value based on the initial current and the measurement data of polysilicon in another embodiment;

[0065] Figure 5 This is a flowchart illustrating the steps for obtaining the expected voltage based on the voltage deviation value and measurement data of polysilicon in one embodiment.

[0066] Figure 6 This is a flowchart illustrating the process before the step of obtaining the target voltage based on the operating mode and expected voltage of the polysilicon reduction furnace power supply in one embodiment.

[0067] Figure 7This is a flowchart illustrating the steps of obtaining the target voltage based on the operating mode and expected voltage of the polysilicon reduction furnace power supply in one embodiment.

[0068] Figure 8 This is a flowchart illustrating the steps for determining the corresponding initial current based on the current stage of the power supply to the polysilicon reduction furnace in one embodiment.

[0069] Figure 9 This is a voltage variation diagram for single-layer operation mode and stacked operation mode in one embodiment;

[0070] Figure 10 This is an application environment diagram of the voltage control method for the power supply of a polysilicon reduction furnace in another embodiment;

[0071] Figure 11 This is a structural block diagram of the voltage control device for the power supply of a polysilicon reduction furnace in one embodiment;

[0072] Figure 12 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0073] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0074] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0075] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0076] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0077] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0078] The voltage control method for the polysilicon reduction furnace power supply provided in this application embodiment can be applied to, for example... Figure 1 In the application environment shown, the polysilicon reduction furnace power supply 102 is connected to the polysilicon 106 (which acts as a load resistor in the circuit), supplying power to the polysilicon 106 to achieve its production. The growth process of the polysilicon 106 lasts for more than a week. During this process, the controller 104 connected to the polysilicon reduction furnace power supply 102 continuously collects real-time circuit data of the polysilicon 106 and controls the voltage of the power supply 102 to ensure a continuous and stable voltage during the polysilicon 106 reduction growth process.

[0079] In one embodiment, such as Figure 2 As shown, a voltage control method for a polysilicon reduction furnace power supply is provided, which is applied to... Figure 1 Taking controller 104 as an example, the following steps are included:

[0080] Step 202: Determine the corresponding initial current based on the current stage of the polysilicon reduction furnace power supply.

[0081] During the growth of polycrystalline silicon, the resistance changes significantly. Initially, the resistance of polycrystalline silicon before breakdown may reach several megaohms. After breakdown, the resistance initially drops to over one hundred ohms, then slowly decreases to 1-2 ohms within a week with heating. The polycrystalline silicon reduction furnace power supply continuously supplies power to the polycrystalline silicon. The current stage of the power supply can be determined based on its operating time or temperature. Different stages of the polycrystalline silicon reduction furnace power supply correspond to different initial currents, which power the polycrystalline silicon at different growth stages.

[0082] Specifically, by comparing the operating time or temperature of the polysilicon reduction furnace power supply with historical operating times or temperatures, the current stage of the power supply can be determined. Based on the current stage of the power supply, the corresponding initial current is determined and output to the polysilicon.

[0083] Step 204: Obtain the measurement data of polysilicon and calculate the voltage deviation value based on the initial current and the measurement data of polysilicon.

[0084] Specifically, the controller connects to the polysilicon wafer and acquires its measurement data. This measurement data corresponds to the actual measured data of the polysilicon, while the initial current determined by the controller corresponds to the theoretical data. Calculations are performed using both the measured and theoretical data, and the deviation is obtained by comparing the two. When the theoretical voltage data is calculated based on the initial current and the polysilicon measurement data, and the polysilicon measurement data includes the actual voltage data, the voltage deviation can be calculated based on the initial current and the polysilicon measurement data.

[0085] Optionally, the controller can also obtain the growth process of polycrystalline silicon based on the measurement data of polycrystalline silicon. For example, if the resistance value of polycrystalline silicon is measured, the growth process of polycrystalline silicon can be judged based on historical experience such as the resistance change curve of polycrystalline silicon.

[0086] Step 206: Obtain the expected voltage based on the voltage deviation value and the measurement data of the polycrystalline silicon.

[0087] Specifically, the growth process of polycrystalline silicon can be obtained from the measurement data, which means that the theoretical data corresponding to the current growth process of polycrystalline silicon (corresponding to the theoretical data mentioned above) can be obtained. Based on the corresponding theoretical data and the test data of polycrystalline silicon, the voltage adjustment parameters can be obtained. These voltage adjustment parameters are then further adjusted according to the voltage deviation value to obtain the expected voltage.

[0088] Step 208: Obtain the target voltage based on the operating mode and expected voltage of the polysilicon reduction furnace power supply.

[0089] Specifically, the expected voltage is the voltage applied to the power supply of the polysilicon reduction furnace before it has been processed. However, in actual applications, the voltage applied to the polysilicon will change depending on the operating mode of the power supply. Therefore, it is necessary to process the expected voltage in combination with the operating mode of the power supply to obtain the target voltage.

[0090] Step 210: Control the voltage of the polysilicon reduction furnace power supply according to the target voltage.

[0091] Specifically, after obtaining the target voltage, the power supply of the polysilicon reduction furnace is controlled based on the target voltage as the demand target for polysilicon.

[0092] In the aforementioned voltage control method for the polysilicon reduction furnace power supply, the initial current is determined based on the current stage of the power supply, polysilicon measurement data is acquired, voltage deviation is calculated based on the initial current and polysilicon measurement data, the expected voltage is obtained based on the voltage deviation and polysilicon measurement data, the target voltage is obtained based on the operating mode of the power supply and the expected voltage, and voltage control is performed on the power supply based on the target voltage. Specifically, the initial current is determined based on the current stage of the power supply, polysilicon is measured based on the initial current, and measurement data is acquired. The target voltage is obtained by combining the initial current, polysilicon measurement data, and the operating mode of the power supply, and voltage control is performed on the power supply based on the target voltage. This method provides accurate voltages for polysilicon at different growth stages.

[0093] In one embodiment, such as Figure 3 As shown, step 204 includes steps 302, 304 and 306.

[0094] Step 302: Obtain measurement data of polycrystalline silicon, and obtain the real-time resistance of polycrystalline silicon based on the measurement data of polycrystalline silicon.

[0095] The resistance changes significantly during the growth of polycrystalline silicon, and the real-time resistance of polycrystalline silicon can be used as an indicator of the growth process. Specifically, measurement data of polycrystalline silicon is acquired, which may include electrical parameters such as current, voltage, and temperature. The real-time resistance of polycrystalline silicon is then calculated based on this measurement data.

[0096] Step 304: Obtain the equivalent initial voltage based on the real-time resistance and initial current of the polysilicon.

[0097] After obtaining the real-time resistance of the polycrystalline silicon, the equivalent initial voltage can be calculated by multiplying the real-time resistance of the polycrystalline silicon by the initial current. This equivalent initial voltage is the theoretical voltage value that should be applied to the polycrystalline silicon at this time, while the voltage measured in the polycrystalline silicon measurement data is the actual voltage value applied to the polycrystalline silicon at this time. Due to circuit settings or the influence of other components in the polycrystalline silicon reduction furnace, the theoretical voltage value and the actual voltage value will deviate and the values ​​will not be equal.

[0098] Step 306: Obtain the voltage deviation value based on the equivalent initial voltage and the measurement data of polycrystalline silicon.

[0099] As described above, the equivalent initial voltage is the theoretical voltage that should be applied to the polysilicon at this point. The voltage measured in the polysilicon measurement data is the actual voltage applied to the polysilicon at this point. Due to circuit settings or the influence of other components in the polysilicon reduction furnace, there is a deviation between this theoretical voltage value and the actual voltage value. To calculate this deviation, the equivalent initial voltage is compared with the polysilicon measurement data, and the voltage deviation value is calculated.

[0100] In one embodiment, the measurement data for polycrystalline silicon includes the real-time current and real-time voltage of the polycrystalline silicon, such as... Figure 4 As shown, step 302 includes step 402, and step 306 includes step 404.

[0101] Step 402: Obtain the real-time current and real-time voltage of the polycrystalline silicon, and obtain the real-time resistance of the polycrystalline silicon based on the real-time current and real-time voltage of the polycrystalline silicon.

[0102] Specifically, by obtaining the real-time current and real-time voltage of the polycrystalline silicon, and dividing the real-time voltage by the real-time current, the real-time resistance of the polycrystalline silicon can be calculated. The real-time resistance of polycrystalline silicon serves as an indicator of its growth process and plays a crucial role in determining the growth process.

[0103] Step 404: Obtain the voltage deviation value based on the equivalent initial voltage and the real-time voltage of the polysilicon.

[0104] After obtaining the real-time resistance of the polycrystalline silicon, the equivalent initial voltage can be calculated by multiplying the real-time resistance of the polycrystalline silicon by the initial current. Then, the equivalent initial voltage is subtracted from the real-time voltage of the polycrystalline silicon to obtain a difference, which is used as the voltage deviation value. The voltage deviation value can be positive or negative and serves as one of the parameters for subsequent adjustment and control, playing an important role in the voltage control of the polycrystalline silicon reduction furnace power supply.

[0105] In one embodiment, such as Figure 5 As shown, step 206 includes steps 502 and 504.

[0106] Step 502: Obtain adjustment parameters based on the measurement data of polycrystalline silicon and the preset current threshold.

[0107] The preset current threshold is obtained by the staff based on their historical experience with the polysilicon growth process (i.e., the electrical parameters corresponding to polysilicon under different growth processes) and is stored in the controller.

[0108] The measurement data for polycrystalline silicon includes the real-time current. Specifically, firstly, based on the current polycrystalline silicon growth process (i.e., the real-time resistance of the polycrystalline silicon, which is typically used as an identifying characteristic of the polycrystalline silicon growth process), a corresponding preset current threshold is selected from historical experience of the polycrystalline silicon growth process. The controller compares the selected preset current threshold with the real-time current of the polycrystalline silicon, and the comparison result is used to obtain the adjustment parameters. The adjustment parameters may include proportional adjustment parameters and integral adjustment parameters, which are used together to achieve regulation.

[0109] For example, the value of this adjustment parameter is not unique. When the deviation between the preset current threshold and the measurement data of the polycrystalline silicon is large, an adjustment parameter with a larger absolute value is obtained. When the deviation between the preset current threshold and the measurement data of the polycrystalline silicon is small, an adjustment parameter with a smaller absolute value is obtained. Optionally, when the preset current threshold is greater than the measurement data of the polycrystalline silicon, the adjustment parameter is positive; when the preset current threshold is less than the measurement data of the polycrystalline silicon, the adjustment parameter is negative.

[0110] Step 504: Obtain the expected voltage based on the voltage deviation value and adjustment parameters.

[0111] The voltage deviation value is used as the basis for secondary adjustment, and the adjustment parameters are adjusted again. The equivalent initial voltage (calculated based on polysilicon measurement data and initial current) is then adjusted using the adjusted parameters to obtain the expected voltage. Specifically, the adjustment parameters are adjusted according to the magnitude of the voltage deviation value. The controller has voltage deviation levels, each corresponding to a range of voltage deviation values, and each level corresponds to a specific adjustment method for the adjustment parameters. The controller determines the adjustment of the adjustment parameters based on which voltage deviation level the value falls within.

[0112] In this embodiment, during the calculation of the expected voltage, adjustment parameters are obtained based on the measurement data of the polysilicon and a preset current threshold. Then, the voltage deviation value is used as a basis for secondary adjustment to further refine the adjustment parameters, ensuring accuracy. The adjusted adjustment parameters are then used to adjust the equivalent initial voltage calculated based on the polysilicon measurement data and the initial current to obtain the expected voltage. This ensures the accuracy of the expected voltage.

[0113] In one embodiment, such as Figure 6 As shown, before step 208, steps 602, 604, and 606 are also included.

[0114] Step 602: Obtain the real-time resistance of the polycrystalline silicon based on the measurement data of the polycrystalline silicon.

[0115] The resistance changes significantly during the growth of polycrystalline silicon, and the real-time resistance of polycrystalline silicon can be used as an indicator of the growth process. Specifically, measurement data of polycrystalline silicon is acquired, which may include electrical parameters such as current, voltage, and temperature. The real-time resistance of polycrystalline silicon is then calculated based on this measurement data.

[0116] Step 604: Obtain the equivalent initial voltage based on the real-time resistance and initial current of the polysilicon.

[0117] After obtaining the real-time resistance of the polysilicon, multiplying the real-time resistance by the initial current yields the equivalent initial voltage. This equivalent initial voltage is the theoretical voltage that should be applied to the polysilicon at this point, while the voltage measured in the polysilicon measurement data is the actual voltage applied to the polysilicon at this point. Due to circuit settings or the influence of other components in the polysilicon reduction furnace, the theoretical voltage value and the actual voltage value may deviate from each other, resulting in different values.

[0118] Based on the above description, it can be seen that steps 602 and 604 are the same as steps 302 and 304 described above, and can be considered as the same step.

[0119] Step 606: Determine the operating mode of the polysilicon reduction furnace power supply based on the equivalent initial voltage and each preset voltage threshold.

[0120] Each preset voltage threshold corresponds to a different operating mode of the polysilicon reduction furnace power supply. Each preset voltage threshold is a voltage range, and these voltage ranges do not overlap. Specifically, when the equivalent initial voltage is within the voltage range of a certain preset voltage threshold, the operating mode of the polysilicon reduction furnace power supply is determined to be the operating mode corresponding to that preset voltage threshold.

[0121] In one embodiment, the operating modes include single-layer operation mode, stacked operation mode, and limiting operation mode, such as... Figure 7 As shown, step 208 includes any one of steps 702, 704 and 706.

[0122] Step 702: When the operating mode is single-layer operation mode, the target voltage is obtained according to the expected voltage and the first correspondence.

[0123] When the operating mode is single-layer operation, the target voltage is obtained by substituting the expected voltage into the first correspondence. The first correspondence is the single-layer control formula:

[0124] U0sig = U1 * sqrt((sin(2*a)+2*pi - 2*pi) / (2*pi))Equation (1)

[0125] Wherein, U0sig is the target voltage in single-layer operation mode, U1 is the expected voltage connected to the single-layer operation branch (the power supply of the polysilicon reduction furnace includes single-layer operation branch and stacked operation branch), sqrt is a function algorithm, a is the single-layer control trigger angle, and pi is the calculated adjustment parameter.

[0126] Specifically, first substitute the fixed voltage of the single-layer operation output by the transformer into U1, and substitute the expected voltage into U0sig, and use the formula (1) to calculate the value of the single-layer control trigger angle α. Then, calculate the target voltage using formula (1).

[0127] Step 704: When the operating mode is the stacked operation mode, the target voltage is obtained according to the expected voltage and the second correspondence.

[0128] When the operating mode is the stacked operation mode, the expected voltage is substituted into the second correspondence to obtain the target voltage. The second correspondence is the stacked control formula:

[0129] U0db=U1* sqrt(2*k*k*pi-2*a1- 2*(k*k - 1)*a2 + sin(2*a1) + (k*k - 1)*sin(2 * a2) / (2*pi)) Formula (2)

[0130] Wherein, U0db is the target voltage in the stacked operation mode, U2 is the expected voltage connected to the stacked operation branch (the power supply of the polysilicon reduction furnace includes a single-layer operation branch and a stacked operation branch, and the stacked operation branch includes a single-layer operation branch), a1 is the first trigger angle of the stacked control, a2 is the second trigger angle of the stacked control, and k is the ratio of U2 / U1.

[0131] The stacked operation mode is based on the single-layer operation mode: the single-layer operation branch is run first, and then the stacked operation branch is run when the voltage in the circuit reaches the preset voltage threshold. After the calculation is completed according to the single-layer operation mode, the fixed voltage of the stacked operation output by the transformer is substituted into U2, the expected voltage is substituted into U0db, and the single-layer control trigger angle a is substituted into the first trigger angle a1 of the stacked control. The value of the second trigger angle a2 of the stacked control is calculated using the formula (2), and then the target voltage is calculated using the formula (2).

[0132] Step 706: When the operating mode is the amplitude limiting mode, the expected voltage is limited according to the preset amplitude to obtain the target voltage.

[0133] When the operating mode is the limiting mode, the expected voltage is limited according to a preset amplitude. This preset amplitude is related to the preset voltage thresholds described above; that is, the preset amplitude can be the maximum value of each voltage range among the preset voltage thresholds. For example, the preset amplitude is the preset voltage threshold with the largest value.

[0134] In this embodiment, the target voltage is obtained by adaptively processing the expected voltage under different operating modes of the polysilicon reduction furnace power supply. Making the target voltage conform to the requirements of the current polysilicon growth process is beneficial for stable polysilicon growth and improves the efficiency of the polysilicon reduction furnace.

[0135] In one embodiment, such as Figure 8 As shown, step 202 includes steps 802 and 804.

[0136] Step 802: Obtain historical data packets.

[0137] The historical data package includes the historical initial current of the polysilicon reduction furnace power supply.

[0138] The staff compiled historical experience of the polysilicon growth process into a historical data package. The controller retrieves and stores this data package, making it easy to retrieve the necessary data when voltage control of the polysilicon reduction furnace power supply is required. The historical data package includes the historical initial current of the polysilicon reduction furnace power supply, which represents the current output by the power supply at each stage of the polysilicon growth process.

[0139] Furthermore, the historical data package may also include a preset voltage threshold for determining the operating mode of the polysilicon reduction furnace power supply. For example, according to formulas (1) and (2) (setting a1 to 30 degrees, a and a2 as variables), a schematic diagram of voltage variation with firing angle is calculated and obtained, as shown below. Figure 9 As shown, line 1 represents the voltage change in single-layer operation mode, and line 2 represents the voltage change in multi-layer operation mode. It can be seen that there is voltage overlap between the single-layer and multi-layer operation modes; therefore, 199.877V can be taken as the dividing line between the two, i.e., the first preset voltage threshold. This corresponds to a 7.2-degree firing angle in single-layer operation mode and a 159.7-degree firing angle in multi-layer operation mode, respectively.

[0140] In this example, the step of determining the operating mode of the polysilicon reduction furnace power supply based on the equivalent initial voltage and each preset voltage threshold (i.e., step 606) is as follows: When the equivalent initial voltage is less than the first preset voltage threshold of 199.877V, the operating mode of the polysilicon reduction furnace power supply is confirmed to be single-layer operation mode. When the equivalent initial voltage is greater than the first preset voltage threshold of 199.877V, the operating mode of the polysilicon reduction furnace power supply is confirmed to be single-layer operation mode.

[0141] Maximum voltage in stacked operation mode ( Figure 9(Not shown in the image) can be used as the second preset voltage threshold. When the equivalent initial voltage is greater than the first preset voltage threshold of 199.877V and less than the second preset voltage threshold, the working mode of the polysilicon reduction furnace power supply is confirmed to be the limited operation mode, and the limited threshold is the second preset voltage threshold.

[0142] Step 804: Select the initial current corresponding to the current stage of the polysilicon reduction furnace power supply from the historical initial current.

[0143] Specifically, by comparing the operating time or temperature of the polysilicon reduction furnace power supply with historical operating times or temperatures, the current stage of the power supply can be determined. Based on this current stage, an initial current corresponding to the current stage is selected from historical initial currents, and this initial current is output to the polysilicon, ensuring that the initial current conforms to historical experience in the polysilicon growth process.

[0144] To better understand the above scheme, combined with Figure 10 The application scenarios shown below will be explained in detail with reference to a specific embodiment.

[0145] In one embodiment, the polysilicon reduction furnace power supply 102 adopts multi-stage segmented control with multiple taps ( Figure 10 The example is a 2-tap transformer output, with U1 outputting 200V and U2 outputting 400V. When the polysilicon reduction furnace power supply 102 operates in single-layer mode, thyristors V51 and V52 are used. When the polysilicon reduction furnace power supply 102 operates in multi-layer mode, thyristors V51, V52, V41, and V42 all operate. The polysilicon load can be considered a purely resistive load; RL in the diagram represents the equivalent resistance of the polysilicon. T40 and T50 in the diagram represent the current in the two branches, while the real-time current flowing through the polysilicon is T60. The voltage of the polysilicon is the value collected by the controller 104 on the voltage divider resistor group PT1 multiplied by 2. The target voltage output by the controller 104 is sent to the voltage generation element of the polysilicon reduction furnace power supply 102.

[0146] The controller acquires and stores historical data packets. Based on the operating time or temperature of the polysilicon reduction furnace power supply, it compares this data with historical operating times or temperatures to determine the current stage of the power supply. According to the current stage, it selects the initial current corresponding to the current stage from historical initial currents and outputs it to the polysilicon. The controller acquires the real-time current T60 and real-time voltage of the polysilicon (the voltage is the value collected by controller 104 on the voltage divider resistor group PT1 multiplied by 2). Dividing the real-time voltage by the real-time current yields the real-time resistance. Multiplying the real-time resistance by the initial current yields the equivalent initial voltage. The difference between the equivalent initial voltage and the real-time voltage is used as the voltage deviation value.

[0147] Based on historical experience in the polysilicon growth process, a corresponding preset current threshold is selected. The controller compares the selected preset current threshold with the real-time current of the polysilicon, and the comparison result is used to obtain the PI control parameter. Then, the voltage deviation value is used as the basis for secondary adjustment to further adjust the PI control parameter. The adjusted PI control parameter is then used to adjust the equivalent initial voltage calculated based on the polysilicon measurement data and the initial current to obtain the expected voltage.

[0148] Meanwhile, after obtaining the equivalent initial voltage, it is determined which preset voltage threshold range the equivalent initial voltage falls within, and then the working mode of the polysilicon reduction furnace power supply is determined to be the working mode corresponding to that preset voltage threshold.

[0149] When the operating mode is single-layer operation mode, the expected voltage is substituted into equation (1) to calculate the target voltage. When the operating mode is multi-layer operation mode, the expected voltage is substituted into equation (2) based on the calculation in equation (1) to calculate the target voltage. When the operating mode is amplitude-limiting operation mode, the expected voltage is limited by a preset voltage threshold as the preset amplitude to obtain the target voltage.

[0150] In this embodiment, an initial current is determined based on the current stage of the polysilicon reduction furnace power supply. Measurements are then performed on the polysilicon based on this initial current to obtain measurement data. The target voltage is obtained by combining the initial current, the polysilicon measurement data, and the operating mode of the polysilicon reduction furnace power supply. The power supply is then controlled according to this target voltage. This allows for the provision of accurate voltages for polysilicon at different growth stages.

[0151] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0152] Based on the same inventive concept, this application also provides a voltage control device for a polysilicon reduction furnace power supply used to implement the voltage control method for the polysilicon reduction furnace power supply described above. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations of the one or more embodiments of the voltage control device for a polysilicon reduction furnace power supply provided below can be found in the limitations of the voltage control method for the polysilicon reduction furnace power supply described above, and will not be repeated here.

[0153] In one embodiment, such as Figure 11 As shown, a voltage control device for a polysilicon reduction furnace power supply is provided, comprising: an initial output module 1102, a deviation calculation module 1104, an adjustment module 1106, a conditioning output module 1108, and a control module 1110, wherein:

[0154] The initial output module 1102 is used to determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace.

[0155] The deviation calculation module 1104 is used to acquire the measurement data of polysilicon and calculate the voltage deviation value based on the initial current and the measurement data of polysilicon.

[0156] The adjustment module 1106 is used to obtain the expected voltage based on the voltage deviation value and the measurement data of the polysilicon.

[0157] The conditioning output module 1108 is used to obtain the target voltage based on the operating mode and expected voltage of the polysilicon reduction furnace power supply.

[0158] The control module 1110 is used to control the voltage of the polysilicon reduction furnace power supply according to the target voltage.

[0159] In one embodiment, the deviation calculation module 1104 is further configured to acquire measurement data of polysilicon, obtain the real-time resistance of polysilicon based on the measurement data of polysilicon, obtain the equivalent initial voltage based on the real-time resistance of polysilicon and the initial current, and obtain the voltage deviation value based on the equivalent initial voltage and the measurement data of polysilicon.

[0160] In one embodiment, the deviation calculation module 1104 is further configured to obtain the real-time current and real-time voltage of the polysilicon, obtain the real-time resistance of the polysilicon based on the real-time current and real-time voltage of the polysilicon, and obtain the voltage deviation value based on the equivalent initial voltage and the real-time voltage of the polysilicon.

[0161] In one embodiment, the adjustment module 1106 is further configured to obtain adjustment parameters based on the measurement data of the polysilicon and a preset current threshold; and to obtain the expected voltage based on the voltage deviation value and the adjustment parameters.

[0162] In one embodiment, the voltage control device for the polysilicon reduction furnace power supply further includes a mode selection module, which is used to obtain the real-time resistance of the polysilicon based on the polysilicon measurement data before the conditioning output module 1108 obtains the target voltage based on the operating mode and expected voltage of the polysilicon reduction furnace power supply; obtain the equivalent initial voltage based on the real-time resistance and initial current of the polysilicon; and determine the operating mode of the polysilicon reduction furnace power supply based on the equivalent initial voltage and each preset voltage threshold.

[0163] In one embodiment, the conditioning output module 1108 is further configured to obtain the target voltage based on the expected voltage and the first correspondence when the operating mode is a single-layer operation mode; obtain the target voltage based on the expected voltage and the second correspondence when the operating mode is a multi-layer operation mode; and obtain the target voltage after limiting the expected voltage according to a preset amplitude when the operating mode is a limiting operation mode.

[0164] In one embodiment, the initial output module 1102 is further configured to acquire historical data packets; the historical data packets include the historical initial current of the polysilicon reduction furnace power supply; and select the initial current corresponding to the current stage of the polysilicon reduction furnace power supply from the historical initial current.

[0165] Each module in the voltage control device of the polysilicon reduction furnace power supply can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0166] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 12As shown, the computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When executed by the processor, the computer program implements a voltage control method for a polysilicon reduction furnace power supply. The display unit is used to form a visually visible image and can be a display screen, projection device, or virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0167] Those skilled in the art will understand that Figure 12 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0168] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0169] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0170] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0171] The expected voltage is obtained based on the voltage deviation value and the measurement data of polycrystalline silicon;

[0172] The target voltage is obtained based on the operating mode and expected voltage of the polysilicon reduction furnace power supply.

[0173] The voltage of the polysilicon reduction furnace power supply is controlled according to the target voltage.

[0174] In one embodiment, when the processor executes the computer program, it further performs the following steps: acquiring measurement data of polysilicon, obtaining the real-time resistance of polysilicon based on the measurement data of polysilicon; obtaining the equivalent initial voltage based on the real-time resistance of polysilicon and the initial current; and obtaining the voltage deviation value based on the equivalent initial voltage and the measurement data of polysilicon.

[0175] In one embodiment, when the processor executes the computer program, it further performs the following steps: acquiring the real-time current and real-time voltage of the polysilicon, obtaining the real-time resistance of the polysilicon based on the real-time current and real-time voltage of the polysilicon, and obtaining the voltage deviation value based on the equivalent initial voltage and the real-time voltage of the polysilicon.

[0176] In one embodiment, when the processor executes the computer program, it further performs the following steps: obtaining adjustment parameters based on the measurement data of the polysilicon and a preset current threshold; and obtaining the expected voltage based on the voltage deviation value and the adjustment parameters.

[0177] In one embodiment, when the processor executes the computer program, it further performs the following steps: obtaining the real-time resistance of the polysilicon based on the measurement data of the polysilicon; obtaining the equivalent initial voltage based on the real-time resistance of the polysilicon and the initial current; and determining the operating mode of the polysilicon reduction furnace power supply based on the equivalent initial voltage and each preset voltage threshold.

[0178] In one embodiment, when the processor executes the computer program, it further performs any one of the following steps: First, when the operating mode is a single-layer operation mode, the target voltage is obtained according to the expected voltage and a first correspondence. Second, when the operating mode is a multi-layer operation mode, the target voltage is obtained according to the expected voltage and a second correspondence. Third, when the operating mode is a limiting operation mode, the target voltage is obtained by limiting the expected voltage according to a preset amplitude.

[0179] In one embodiment, when the processor executes the computer program, it further performs the following steps: acquiring historical data packets; the historical data packets include the historical initial current of the polysilicon reduction furnace power supply; and selecting an initial current from the historical initial current that corresponds to the current stage of the polysilicon reduction furnace power supply.

[0180] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0181] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0182] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0183] The expected voltage is obtained based on the voltage deviation value and the measurement data of polycrystalline silicon;

[0184] The target voltage is obtained based on the operating mode and expected voltage of the polysilicon reduction furnace power supply.

[0185] The voltage of the polysilicon reduction furnace power supply is controlled according to the target voltage.

[0186] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: acquiring measurement data of polysilicon, obtaining the real-time resistance of polysilicon based on the measurement data of polysilicon; obtaining the equivalent initial voltage based on the real-time resistance of polysilicon and the initial current; and obtaining the voltage deviation value based on the equivalent initial voltage and the measurement data of polysilicon.

[0187] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: acquiring the real-time current and real-time voltage of the polysilicon, obtaining the real-time resistance of the polysilicon based on the real-time current and real-time voltage of the polysilicon, and obtaining the voltage deviation value based on the equivalent initial voltage and the real-time voltage of the polysilicon.

[0188] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: obtaining adjustment parameters based on the measurement data of the polysilicon and a preset current threshold; and obtaining the expected voltage based on the voltage deviation value and the adjustment parameters.

[0189] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: obtaining the real-time resistance of the polysilicon based on the measurement data of the polysilicon; obtaining the equivalent initial voltage based on the real-time resistance of the polysilicon and the initial current; and determining the operating mode of the polysilicon reduction furnace power supply based on the equivalent initial voltage and each preset voltage threshold.

[0190] In one embodiment, when the computer program is executed by the processor, it further performs any one of the following steps: First, when the operating mode is a single-layer operation mode, obtaining the target voltage according to the expected voltage and a first correspondence. Second, when the operating mode is a multi-layer operation mode, obtaining the target voltage according to the expected voltage and a second correspondence. Third, when the operating mode is a limiting operation mode, obtaining the target voltage by limiting the expected voltage according to a preset amplitude.

[0191] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: acquiring historical data packets; the historical data packets include the historical initial current of the polysilicon reduction furnace power supply; and selecting an initial current from the historical initial current that corresponds to the current stage of the polysilicon reduction furnace power supply.

[0192] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0193] Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace;

[0194] Acquire measurement data of polycrystalline silicon, and calculate the voltage deviation value based on the initial current and the measurement data of polycrystalline silicon;

[0195] The expected voltage is obtained based on the voltage deviation value and the measurement data of polycrystalline silicon;

[0196] The target voltage is obtained based on the operating mode and expected voltage of the polysilicon reduction furnace power supply.

[0197] The voltage of the polysilicon reduction furnace power supply is controlled according to the target voltage.

[0198] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: acquiring measurement data of polysilicon, obtaining the real-time resistance of polysilicon based on the measurement data of polysilicon; obtaining the equivalent initial voltage based on the real-time resistance of polysilicon and the initial current; and obtaining the voltage deviation value based on the equivalent initial voltage and the measurement data of polysilicon.

[0199] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: acquiring the real-time current and real-time voltage of the polysilicon, obtaining the real-time resistance of the polysilicon based on the real-time current and real-time voltage of the polysilicon, and obtaining the voltage deviation value based on the equivalent initial voltage and the real-time voltage of the polysilicon.

[0200] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: obtaining adjustment parameters based on the measurement data of the polysilicon and a preset current threshold; and obtaining the expected voltage based on the voltage deviation value and the adjustment parameters.

[0201] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: obtaining the real-time resistance of the polysilicon based on the measurement data of the polysilicon; obtaining the equivalent initial voltage based on the real-time resistance of the polysilicon and the initial current; and determining the operating mode of the polysilicon reduction furnace power supply based on the equivalent initial voltage and each preset voltage threshold.

[0202] In one embodiment, when the computer program is executed by the processor, it further performs any one of the following steps: First, when the operating mode is a single-layer operation mode, obtaining the target voltage according to the expected voltage and a first correspondence. Second, when the operating mode is a multi-layer operation mode, obtaining the target voltage according to the expected voltage and a second correspondence. Third, when the operating mode is a limiting operation mode, obtaining the target voltage by limiting the expected voltage according to a preset amplitude.

[0203] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: acquiring historical data packets; the historical data packets include the historical initial current of the polysilicon reduction furnace power supply; and selecting an initial current from the historical initial current that corresponds to the current stage of the polysilicon reduction furnace power supply.

[0204] It should be noted that the user information (including but not limited to user device information, user personal information, such as historical data packets) and data (including but not limited to data used for analysis, stored data, and displayed data) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions.

[0205] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0206] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0207] The above embodiments are merely illustrative of several implementation methods of this application, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A voltage control method for a polycrystalline silicon reduction furnace power supply, characterized in that, The method includes: Determine the corresponding initial current based on the current stage of the power supply of the polysilicon reduction furnace; Acquire measurement data of polycrystalline silicon, including real-time current and real-time voltage of polycrystalline silicon; The real-time resistance of the polysilicon is obtained based on the real-time current and real-time voltage of the polysilicon. The equivalent initial voltage is obtained based on the real-time resistance of the polysilicon and the initial current. The voltage deviation value is obtained based on the equivalent initial voltage and the real-time voltage of the polycrystalline silicon. The expected voltage is obtained based on the voltage deviation value and the measurement data of the polycrystalline silicon; The target voltage is obtained based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage. The power supply to the polysilicon reduction furnace is voltage controlled according to the target voltage.

2. The method according to claim 1, characterized in that, The step of obtaining the expected voltage based on the voltage deviation value and the measurement data of the polycrystalline silicon includes: The adjustment parameters are obtained based on the measurement data of the polycrystalline silicon and the preset current threshold. The expected voltage is obtained based on the voltage deviation value and the adjustment parameters.

3. The method according to claim 1, characterized in that, Before obtaining the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage, the method further includes: The operating mode of the polysilicon reduction furnace power supply is determined based on the equivalent initial voltage and each preset voltage threshold.

4. The method according to claim 1, characterized in that, The operating modes include single-layer operation mode, stacked operation mode, and limited-amplitude operation mode. The step of obtaining the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage includes any one of the following: First item, When the operating mode is a single-layer operation mode, the target voltage is obtained according to the expected voltage and the first correspondence. The second item, When the operating mode is the stacked operation mode, the target voltage is obtained according to the expected voltage and the second correspondence. The third item, When the operating mode is the amplitude limiting mode, the expected voltage is limited according to the preset amplitude to obtain the target voltage.

5. The method according to claim 4, characterized in that, The first correspondence is a single-layer control formula: U0sig = U1 * sqrt((sin(2*a)+2*pi - 2*a) / (2*pi)) Where U0sig is the target voltage in single-layer operation mode, U1 is the expected voltage connected to the single-layer operation branch, a is the single-layer control trigger angle, and pi is the calculated adjustment parameter. When the operating mode is a single-layer operation mode, obtaining the target voltage based on the expected voltage and the first correspondence includes: Substitute the fixed voltage of the single-layer operation output of the transformer into U1, substitute the expected voltage into U0sig, and use the single-layer control formula to calculate the single-layer control trigger angle α. Substituting the expected voltage into U1, and based on the calculated single-layer control trigger angle α, the target voltage is obtained.

6. The method according to claim 5, characterized in that, The second correspondence is the layer control formula: U0db=U1* sqrt(2*k*k*pi-2*a1- 2*(k*k - 1)*a2 + sin(2*a1) + (k*k - 1)*sin(2* a2) / (2*pi)); Wherein, U0db is the target voltage in the stacked operation mode, k is the ratio of U2 / U1, U2 is the expected voltage connected to the stacked operation branch, a1 is the first trigger angle of the stacked control, and a2 is the second trigger angle of the stacked control. When the operating mode is a stacked operation mode, obtaining the target voltage based on the expected voltage and the second correspondence includes: Substitute the fixed voltage of the transformer output for the stacked operation into U2, substitute the expected voltage into U0db, substitute the single-layer control trigger angle a into the stacked control first trigger angle a1, and calculate the stacked control second trigger angle a2. Substituting the expected voltage into U2, substituting the single-layer control trigger angle a into the stacked control first trigger angle a1, and based on the calculated stacked control second trigger angle a2, the target voltage is obtained.

7. The method according to claim 1, characterized in that, The determination of the corresponding initial current based on the current stage of the polysilicon reduction furnace power supply includes: Acquire historical data packets; the historical data packets include the historical initial current of the polysilicon reduction furnace power supply; From the historical initial currents, select the initial current that corresponds to the current stage of the polysilicon reduction furnace power supply.

8. A voltage control device for a polycrystalline silicon reduction furnace power supply, characterized in that, The device includes: The initial output module is used to determine the corresponding initial current based on the current stage of the power supply to the polysilicon reduction furnace. The deviation calculation module is used to acquire measurement data of polycrystalline silicon, including real-time current and real-time voltage of polycrystalline silicon; to obtain the real-time resistance of polycrystalline silicon based on the real-time current and real-time voltage of polycrystalline silicon; to obtain the equivalent initial voltage based on the real-time resistance of polycrystalline silicon and the initial current; and to obtain the voltage deviation value based on the equivalent initial voltage and the real-time voltage of polycrystalline silicon. An adjustment module is used to obtain the expected voltage based on the voltage deviation value and the measurement data of the polycrystalline silicon; The conditioning output module is used to obtain the target voltage based on the operating mode of the polysilicon reduction furnace power supply and the expected voltage. The control module is used to control the voltage of the power supply for the polysilicon reduction furnace according to the target voltage.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 7.

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