A transverse-longitudinal distribution adjustable huygens super surface

Abstract

The application claims a kind of adjustable huerres super surface of feeder horizontal and vertical distribution, belongs to adjustable huerres super surface's power supply field, including: dielectric layer;Upper metal layer, including first upper cross bar, first lower cross bar and the first vertical pole of connecting first upper cross bar, first lower cross bar, first PIN tube is equipped in the first vertical pole;Lower metal layer, including second upper cross bar, second lower cross bar, the second vertical pole of connecting second upper cross bar, second lower cross bar, first horizontal feed line and first vertical feed line, second PIN tube is equipped in the second vertical pole;The upper layer metal structure and lower layer metal structure are respectively arranged on the two sides of the dielectric layer;Metal via hole is connected with first lower cross bar on the upper side, and second upper cross bar on the lower side.The center frequency of the application is 9.4GHz, and the metal via hole is connected with the upper and lower metal layers and the feed line horizontal and vertical across the whole super surface, which is expected to simplify the feed network of huerres super surface array, with the characteristics of simple feed network.

Description

Technical Field

[0001] This invention relates to the field of feeding tunable Huygens metasurfaces, and more specifically to a tunable Huygens metasurface with a transverse and longitudinal distribution of feed lines. Background Technology

[0002] With proper design, the electrical impedance and magnetic admittance of Huygens metasurfaces can be used to modulate electromagnetic waves. Their structure mainly comprises electrical and magnetic resonant components, and with appropriate structural dimensions, Huygens resonance can be induced. At Huygens resonance, the metasurface unit exhibits near-perfect transmission characteristics. Due to the significantly improved transmission efficiency of Huygens metasurfaces, they have significant applications in various fields such as optical vortex beamforming, antenna radiation, holography, and dynamic wavefront control.

[0003] Due to the complexity, high fabrication difficulty, and high cost of multilayer Huygens metasurfaces, research on low-profile, via-free Huygens metasurfaces is currently very active, with two-layer and lower structures emerging. For example, Chinese Patent Publication No. CN110380222A discloses a Huygens metasurface unit, a transmission array antenna, and a unit phase control method. The unit includes a dielectric substrate, an upper metal layer on the upper surface of the dielectric substrate, and a lower metal layer on the lower surface of the dielectric substrate. Both the upper and lower metal layers include open metal resonant rings, with metal patches embedded inside the resonant rings. The opening positions of the open metal resonant rings in the upper and lower metal layers are anti-symmetrical. The metasurface is composed of an array of several unit structures. By adjusting the size of the outer ring opening and the length of the embedded metal patch, the unit structure can achieve 360° transmission phase control while maintaining a transmission amplitude above 2.5 dB. This invention solves the problem of multilayer Huygens metasurfaces requiring vias.

[0004] Since the performance of a Huygens metasurface is fixed once its structural dimensions are determined, the functionality of a planar array based on the Huygens metasurface is also fixed once it is manufactured. To solve this problem, tunable Huygens metasurfaces have emerged. Generally, tunable Huygens metasurfaces achieve tunable characteristics by adding active devices such as PIN diodes and varactor diodes. For example, [IEEE T ANTENN PROPAG,2022,70(9):7491-7500.] discloses a double-layer tunable Huygens metasurface: its element insertion loss is about 1dB, and the tunable characteristics are achieved by switching two PIN diodes. A 10×10 transmission array was fabricated to achieve beam scanning at ±50° in the E plane and ±40° in the H plane.

[0005] However, current tunable Huygens metasurfaces based on active devices suffer from complex feed networks. For an m x n reconfigurable transmission array based on a Huygens metasurface, m*n feed lines are needed to achieve independent control of each Huygens element. This type of reconfigurable transmission array antenna suffers from problems such as complex feed networks, high fabrication difficulty, and high manufacturing costs.

[0006] This invention designs an tunable Huygens metasurface model with orthogonal feeders, which is expected to combine with the row and column feeding mode of the array in [IEEE TVEHTECHNOL, 2021, 70(10): 9716-9724.] to achieve independent control of m*n array elements with only m+n feeders. At the same time, this structure also has the characteristics of simple structure, wide bandwidth, and large phase modulation. Summary of the Invention

[0007] This invention aims to solve the problems existing in the prior art. It proposes an tunable Huygens metasurface with a transverse and longitudinal feed distribution. The technical solution of this invention is as follows:

[0008] A tunable Huygens metasurface with transverse and longitudinal feed lines, comprising:

[0009] Dielectric layer;

[0010] The upper metal layer located above the dielectric layer includes a first upper horizontal bar, a first lower horizontal bar, and a first vertical bar connecting the first upper horizontal bar and the first lower horizontal bar, wherein a first PIN tube is provided inside the first vertical bar;

[0011] The lower metal layer located below the dielectric layer includes a second upper horizontal bar, a second lower horizontal bar, a second vertical bar connecting the second upper horizontal bar and the second lower horizontal bar, a first horizontal feed line and a first vertical feed line, wherein a second PIN tube is provided inside the first vertical bar;

[0012] And including metal vias that extend through the upper and lower metal layers.

[0013] The dielectric layer provides the physical basis for the phase shift by allowing electromagnetic waves to pass through; the upper metal layer above the dielectric layer and the lower metal layer below the dielectric layer generate Huygens resonance by utilizing the antisymmetric characteristics of their structure; the first PIN diode and the second PIN diode provide adjustable characteristics for the structure by utilizing their unidirectional conduction characteristics; metal vias are used to unify the voltage of the first lower crossbar and the second upper crossbar; the first vertical feed line and the first upper crossbar, which are orthogonally distributed in space, are used to independently feed the unit.

[0014] Furthermore, both the upper and lower metal layers are made of copper.

[0015] Furthermore, the dielectric layer is made of FR4 material, has a relative permittivity of 2.55, a thickness of 4.7 mm, a length of 15.6 mm, and a width of 15.6 mm.

[0016] Furthermore, the first vertical bar is provided with a first opening, the first PIN tube is disposed in the first opening, the length of the first opening is 0.2mm, and the first opening is 0.55mm away from the first lower horizontal bar below.

[0017] Furthermore, the second vertical rod is provided with a second opening, the second PIN tube is disposed in the second opening, the length of the second opening is 0.2mm, and the second opening is 0.55mm away from the upper second horizontal rod.

[0018] Furthermore, the length of the first upper crossbar and the first lower crossbar are both 15.6 mm, the width is both 1.1 mm, and the thickness is both 0.035 mm. The upper surface of the first upper crossbar is 2.35 mm away from the upper surface of the medium layer. The length of the first vertical bar is 5.1 mm and the width is 2.2 mm.

[0019] Furthermore, the second upper crossbar and the second lower crossbar are both 14.1 mm long, 1.1 mm wide, and 0.035 mm thick, and the lower surface of the second lower crossbar is 2.35 mm away from the lower surface of the medium layer; the second vertical bar is 5.1 mm long and 2.2 mm wide.

[0020] Furthermore, the first cross feed line has a length of 6.7 mm, a width of 0.2 mm, and a thickness of 0.035 mm; the first cross feed line is 1.15 mm away from the second opening;

[0021] The first vertical feed line has a length of 15.6 mm, a width of 0.2 mm, and a thickness of 0.035 mm; the distance between the first vertical feed line and the second upper horizontal bar and the second lower horizontal bar is 0.75 mm.

[0022] Furthermore, the diameter of the metal via is 0.2 mm and the height is 4.77 mm; the metal via is connected to the first lower crossbar at the top and the second upper crossbar at the bottom.

[0023] Furthermore, both the first and second PIN tubes are MACOM MADP-000907-14020 PIN tubes; the equivalent circuit for this type of PIN tube is R=7.8Ω and L=30pH in series when it is turned on, and the equivalent circuit for it is L=30pH and C=0.025pF in series when it is turned off.

[0024] The advantages and beneficial effects of this invention are as follows:

[0025] An m-row n-column tunable transmission array based on a Huygens metasurface typically requires m*n feed lines to independently control m*n cells. Due to the influence of the feed lines on the cells and the complexity of the feed line network, the actual test results of the tunable Huygens metasurface may differ significantly from the simulation results. This invention proposes a tunable Huygens metasurface with horizontally and vertically distributed feed lines. A central metal via ensures that one end of the upper and lower I-shaped structures is at the same potential, requiring only the potential of the first upper horizontal bar and the first vertical feed line to be controlled. The unique arrangement of the first upper horizontal bar and the first vertical feed line in the structure provides physical assurance that adjacent cells share a single feed line. Therefore, this invention promises to achieve independent row and column control with only m+n feed lines, greatly simplifying the feed line network. Furthermore, this invention features a simple structure, wide bandwidth, and large phase modulation. Attached Figure Description

[0026] Figure 1 This is a side view of an adjustable Huygens metasurface with a feed line distribution according to the present invention.

[0027] Figure 2 This is a front view of an adjustable Huygens metasurface with a transverse and longitudinal feed distribution as described in this invention.

[0028] Figure 3 This is a back view of an adjustable Huygens metasurface with a feed line distribution according to the present invention.

[0029] Figure 4 For the present invention in state 1 (on) and state 0 (off) |S 21 |Curve;

[0030] Figure 5 For the present invention in state 1 (on) and state 0 (off), S 21 Phase curve;

[0031] The attached diagram shows the markings and corresponding component names:

[0032] 1-Dielectric layer, 2-First upper horizontal bar, 3-First lower horizontal bar, 4-First vertical bar, 5-First opening, 6-First PIN tube, 7-Second upper horizontal bar, 8-Second lower horizontal bar, 9-Second vertical bar, 10-Second opening, 11-Second PIN tube, 12-First horizontal feed, 13-First vertical feed, 14-Metal via Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and thoroughly described below with reference to the accompanying drawings. The described embodiments are merely some embodiments of the present invention.

[0034] The technical solution of the present invention to solve the above-mentioned technical problems is:

[0035] In the description of this invention, it should be understood that the terms "front", "rear", "left", "right", "up", "down", "vertical", "horizontal", "high", "low", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the scope of protection of this invention.

[0036] Example

[0037] like Figure 1-3 As shown, an tunable Huygens metasurface with feed lines arranged horizontally and vertically includes:

[0038] Dielectric layer 1: In this example, the material of dielectric layer 1 is FR4, and the relative permittivity ε of dielectric layer 1 is... r =2.55, thickness h=4.7mm, length is 15.6mm, width is 15.6mm, and dielectric loss angle is.

[0039] The metal via 14 is made of copper, and the metal via 14 is connected to the first lower crossbar 3 at the top and the second upper crossbar 7 at the bottom.

[0040] Specifically, the diameter of the metal via 14 is 0.2 mm and the height is 4.77 mm.

[0041] The upper metal layer and the lower metal layer are respectively disposed on both sides of the dielectric layer 1, and the materials of the upper metal layer and the lower metal layer are both copper.

[0042] Specifically, the upper metal structure is laid horizontally on the upper surface of the dielectric plate 1, and the lower metal structure is laid horizontally on the lower surface of the dielectric plate 1.

[0043] The upper metal layer includes a first upper horizontal bar 2, a first lower horizontal bar 3, and a first vertical bar 4 connecting the first upper horizontal bar 2 and the first lower horizontal bar 3. The first vertical bar 4 is provided with a first opening 5. The corresponding optimization was carried out with performance as the target, and the position of the first opening 5 with the best performance was obtained. This position is relatively close to the first lower horizontal bar. Specifically, the performance is best when the distance between the first opening 5 and the first lower horizontal bar 3 is 0.55mm. The first PIN tube 6 is placed at the first opening 5.

[0044] In this embodiment, the length of the first upper crossbar 2 and the first lower crossbar 3 are both 15.6 mm, the width is both 1.1 mm, and the thickness is both 0.035 mm. The distance from the upper surface of the first upper crossbar 2 to the upper surface of the medium layer 1 is 2.35 mm. The length of the first vertical bar 4 is 5.1 mm and the width is 2.2 mm. The length of the first opening 5 is 0.2 mm and the width is 2.2 mm.

[0045] The lower metal layer includes a second upper horizontal bar 7, a second lower horizontal bar 8, a second vertical bar 9 connecting the second upper horizontal bar 7 and the second lower horizontal bar 8, a first horizontal feed line 12, and a first vertical feed line 13. The second vertical bar 9 has a second opening 10. The second opening 10 has been optimized for performance, and the optimal position of the second opening 10 is obtained. This position is relatively close to the second upper horizontal bar 7. Specifically, the optimal performance is achieved when the distance between the second opening 10 and the second upper horizontal bar 7 is 0.55mm. The second PIN tube 11 is placed at the second opening 10. The distance between the first horizontal feed line 12 and the second opening 10 is 1.15mm. The distance between the first vertical feed line 13 and the second upper horizontal bar 7 and the second lower horizontal bar 8 is 0.75mm.

[0046] In this embodiment, the second upper horizontal bar 7 and the second lower horizontal bar 8 are both 14.1 mm long, 1.1 mm wide, and 0.035 mm thick. The distance from the lower surface of the second lower horizontal bar 8 to the lower surface of the dielectric layer 1 is 2.35 mm. The second vertical bar 9 is 5.1 mm long and 2.2 mm wide. The second opening 10 is 0.2 mm long and 2.2 mm wide. The first horizontal feed line 12 is 6.7 mm long, 0.2 mm wide, and 0.035 mm thick. The first vertical feed line 13 is 15.6 mm long, 0.2 mm wide, and 0.035 mm thick.

[0047] The dimensions mentioned above are all parameters obtained after optimization using the professional electromagnetic simulation software CST Studio Suite. The optimization goal is to enable the Huygens metasurface unit to obtain greater transmittance and greater phase change of transmitted waves.

[0048] The PIN tube is installed at the opening, allowing the Huygens metasurface unit to achieve reconfigurability directly by controlling the opening and closing of the PIN tube.

[0049] In this example, both the first PIN tube 6 and the second PIN tube 11 are PIN tubes of model MACOM MADP-000907-14020. The equivalent circuit for conduction is R=7.8Ω and L=30pH in series, and the equivalent circuit for cutoff is L=30pH and C=0.025pF in series.

[0050] The structure achieves Huygens resonance through the central symmetry of the upper and lower I-shaped structures; the first PIN tube 6 and the second PIN tube are used to provide different states for the Huygens metasurface, providing the physical basis for the tunable Huygens metasurface; the metal via 14 is used to connect the upper and lower metal layers, so that the power supply of the structure only needs to control the upper and lower layer feed line voltages; in the power supply of the array, the first horizontal feed line 12, the first vertical feed line 13 and the first upper horizontal bar 2 in the lower metal layer are expected to simplify the number of bias lines of the entire array by making reasonable arrangements between the units.

[0051] When both the first PIN tube 6 and the second PIN tube 11 are in the conducting state (state 1), the transmission performance of the present invention is strong. In the range of 8-12 GHz, the insertion loss of the Huygens metasurface unit is significantly less than 1.5 dB, which can effectively realize the transmission of electromagnetic waves.

[0052] When both the first PIN diode 6 and the second PIN diode 11 are in the off state (state 0), the transmission amplitude of the Huygens metasurface is greater than -3dB in most frequency bands. For example... Figure 4 As shown, in this state, the Huygens metasurface produces Huygens resonances at approximately 9.4 GHz. Figure 5 As shown, the phase shift brought about by the Huygens metasurface in this state basically covers the entire 360°, providing a basic theoretical requirement for the subsequent use of reconfigurable Huygens metasurfaces to achieve certain functions.

[0053] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0054] The above embodiments should be understood as illustrative only and not as limiting the scope of protection of the present invention. After reading the description of the present invention, those skilled in the art can make various alterations or modifications to the present invention, and these equivalent changes and modifications also fall within the scope defined by the claims of the present invention.

Claims

1. An adjustable Huygens metasurface with transversely and longitudinally distributed feed lines, characterized in that, include: Dielectric layer; The upper metal layer located above the dielectric layer includes a first upper horizontal bar, a first lower horizontal bar, and a first vertical bar connecting the first upper horizontal bar and the first lower horizontal bar, wherein a first PIN tube is provided inside the first vertical bar; The lower metal layer located below the dielectric layer includes a second upper horizontal bar, a second lower horizontal bar, a second vertical bar connecting the second upper horizontal bar and the second lower horizontal bar, a first horizontal feed line and a first vertical feed line, wherein a second PIN tube is provided inside the first vertical bar; And including metal vias extending through the upper and lower metal layers; The dielectric layer provides the physical basis for electromagnetic wave transmission and the generation of a certain phase shift; the upper metal layer above the dielectric layer and the lower metal layer below the dielectric layer generate Huygens resonance using their antisymmetric structural characteristics; the first PIN diode and the second PIN diode provide adjustable characteristics for the structure using their unidirectional conduction characteristics; metal vias are used to unify the voltage of the first lower crossbar and the second upper crossbar; the first vertical feed line and the first upper crossbar, which are orthogonally distributed in space, are used to independently feed the unit; The first upper crossbar and the first lower crossbar are both 15.6 mm long, 1.1 mm wide, and 0.035 mm thick. The upper surface of the first upper crossbar is 2.35 mm away from the upper surface of the medium layer. The first vertical bar is 5.1 mm long and 2.2 mm wide. The second upper crossbar and the second lower crossbar are both 14.1 mm long, 1.1 mm wide, and 0.035 mm thick. The lower surface of the second lower crossbar is 2.35 mm away from the lower surface of the medium layer. The second vertical bar is 5.1 mm long and 2.2 mm wide. The first horizontal feed line has a length of 6.7 mm, a width of 0.2 mm, and a thickness of 0.035 mm; the first horizontal feed line is 1.15 mm away from the second opening; the first vertical feed line has a length of 15.6 mm, a width of 0.2 mm, and a thickness of 0.035 mm; the first vertical feed line is 0.75 mm away from both the second upper horizontal and lower horizontal and vertical rods.

2. The adjustable Huygens metasurface with transverse and longitudinal feed distribution according to claim 1, characterized in that, Both the upper and lower metal layers are made of copper.

3. The adjustable Huygens metasurface with transverse and longitudinal feed distribution according to claim 1, characterized in that, The dielectric layer is made of FR4 material, has a relative permittivity of 2.55, a thickness of 4.7 mm, a length of 15.6 mm, and a width of 15.6 mm.

4. The adjustable Huygens metasurface with transverse and longitudinal feed distribution according to claim 1, characterized in that, The first vertical bar has a first opening, the first PIN tube is disposed in the first opening, the length of the first opening is 0.2mm, and the first opening is 0.55mm away from the first lower horizontal bar below.

5. The adjustable Huygens metasurface with transverse and longitudinal feed distribution according to claim 1, characterized in that, The second vertical bar has a second opening, the second PIN tube is disposed in the second opening, the length of the second opening is 0.2mm, and the second opening is 0.55mm away from the upper second horizontal bar.

6. The adjustable Huygens metasurface with transverse and longitudinal feed distribution according to claim 1, characterized in that, The diameter of the metal through hole is 0.2 mm and the height is 4.77 mm; the metal through hole is connected to the first lower crossbar at the top and the second upper crossbar at the bottom.

7. The adjustable Huygens metasurface with transverse and longitudinal feed distribution according to claim 1, characterized in that, Both the first and second PIN diodes are MACOM MADP-000907-14020 PIN diodes; the equivalent circuit for the conduction of this type of PIN diode is as follows: and The series and cutoff equivalent circuits are and Series connection.

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