A weaving method of an embedded inorganic semiconductor-based thermoelectric fabric

By embedding inorganic thermoelectric blocks into the fabric and forming a series structure, the problem of poor flexibility of inorganic thermoelectric materials is solved, and efficient thermoelectric conversion and temperature difference cooling are achieved, which is suitable for smart wearable devices.

CN116716693BActive Publication Date: 2026-04-10DONGHUA UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DONGHUA UNIV
Filing Date
2023-06-09
Publication Date
2026-04-10

AI Technical Summary

Technical Problem

Existing thermoelectric fabrics suffer from problems such as poor flexibility, low thermoelectric conversion efficiency, and inability to provide cooling, and the flexible application of inorganic bulk thermoelectric materials is limited by stiffness.

Method used

The method of weaving embedded inorganic semiconductor-based thermoelectric fabric involves embedding inorganic thermoelectric blocks into pocket-shaped spaces in the fabric and tightly wrapping them during the weaving process. These blocks are then welded together with conductive yarns to form a series structure.

Benefits of technology

Thermoelectric fabrics with high flexibility and high thermoelectric conversion efficiency have been developed, which can generate electricity and provide cooling due to temperature difference. They also have mechanical stability and durability, and are suitable for self-powering and temperature regulation of smart wearable devices.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a weaving method of embedded inorganic semiconductor base thermoelectric fabric, comprising the following steps: determining the size of inorganic thermoelectric block according to the design size of the thermoelectric fabric; then plating conductive material on the upper surface and the lower surface of the inorganic thermoelectric block; then determining the length of warp yarn and weft yarn according to the design size of the thermoelectric fabric; determining the size of each pocket-like space according to the size of the inorganic thermoelectric block; starting the weaving process; after the weaving is completed, heating the upper surface and the lower surface of the fabric, welding the conductive yarn and the inorganic thermoelectric block; finally, connecting all the inorganic thermoelectric blocks in series to obtain the thermoelectric fabric. The application combines the thermoelectric principle and the textile technology, embeds the inorganic thermoelectric block into the fabric, and realizes one-piece forming, thus solving the key technical problem of the flexibility of the inorganic thermoelectric material, realizing three-dimensional deformation while maintaining excellent thermoelectric performance, and realizing temperature difference refrigeration while maintaining high thermoelectric conversion efficiency.
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Description

TECHNICAL FIELD

[0001] The present application relates to the weaving technology of thermoelectric fabric, in particular to a weaving method of embedded inorganic semiconductor-based thermoelectric fabric. BACKGROUND

[0002] With the development of mobile networks, sensors, Internet of Things, big data and artificial intelligence, smart wearable devices have shown broad application prospects in the fields of health care, smart clothing and smart skin. Thermoelectric materials are a new type of functional materials that can convert heat energy and electrical energy. They are widely concerned due to their small size, light weight, no moving parts, no noise, no pollution, long service life and easy control. Excellent thermoelectric materials can efficiently recover heat energy. Based on the wearability of fabric, the combination of traditional textiles and thermoelectric materials can utilize the wearable thermoelectric generator to collect and convert the excess heat of the human body, which theoretically realizes the self-power supply of smart wearable textiles.

[0003] Current thermoelectric fabrics mainly attach organic thermoelectric materials or powdered inorganic thermoelectric materials to textile yarns through methods such as soaking and coating to prepare P-type and N-type yarns or composite yarns with P-type segments, N-type segments and electrode segments, and then interleave the yarns into a flexible fabric with a certain thickness to obtain a thermoelectric conversion fabric. Although such fabrics have a certain flexibility, the organic thermoelectric materials themselves have poor thermoelectric performance, and most textile yarns are insulating. Although the coated thermoelectric materials have certain electrical conductivity, the resistance is very large, resulting in low thermoelectric conversion efficiency and only being able to be used for thermoelectric generation, not refrigeration.

[0004] Inorganic bulk thermoelectric materials have superior thermoelectric performance, but their application as flexible thermoelectric materials is limited by their inherent rigidity. The application publication CN109524533A discloses a coil-shaped thermoelectric unit, a fabric-structured thermoelectric device and its preparation and application, but the fabric-structured thermoelectric device prepared only has power generation function and cannot be refrigerated. The power generation power is in the order of μW, and the application range is very limited. The application publication CN111095583A discloses a thermoelectric fabric that can be used for temperature control on the surface of a motor vehicle seat, but the fabric is only connected by flexible wires such as copper wires. Although it can achieve refrigeration function, the area of each part is large, and after arrangement, it can only bend in one direction, with limited flexibility and lack of comfort, and cannot be worn. SUMMARY

[0005] In view of the deficiencies of the prior art, the technical problem to be solved by the present application is to provide a weaving method of embedded inorganic semiconductor-based thermoelectric fabric.

[0006] The technical scheme for solving the technical problem of the present application is to provide a weaving method of an embedded inorganic semiconductor-based thermoelectric fabric, characterized in that the method comprises the following steps:

[0007] Step 1, determining the size of the inorganic thermoelectric block according to the design size of the thermoelectric fabric;

[0008] Step 2, plating conductive material on the upper surface and the lower surface of the inorganic thermoelectric block;

[0009] Step 3, before weaving, determining the length of the warp yarn and the weft yarn according to the design size of the thermoelectric fabric, and determining the size of each pocket-shaped space according to the size of the inorganic thermoelectric block;

[0010] Step 4, during weaving, the specific steps are as follows:

[0011] S4.1, warp yarn on-machine: selecting a plurality of non-conductive yarns as warp yarns; then fixing one end of the warp yarns on the back roller, sequentially performing threading and reeding according to the weave pattern, and finally fixing the other end of the warp yarns on the front roller;

[0012] S4.2, weaving the first unit structure: the fabric weave structure of the first unit structure is single-layer weave, and the weft yarns use non-conductive yarns; after weaving two weft non-conductive yarns, the weaving of the first unit structure is completed;

[0013] S4.3, weaving the second unit structure: the fabric weave structure of the second unit structure is composed of multi-layer weave and single-layer weave, and the weft yarns use non-conductive yarns; the two fabric weaves are formed simultaneously when the weft yarns are introduced, and the weaving is performed until at least one-third of the inorganic thermoelectric block is covered;

[0014] S4.4, weaving the third unit structure: the fabric weave structure of the third unit structure is composed of multi-layer weave and float weave, and the weft yarns are replaced with conductive yarns; the two fabric weaves are formed simultaneously when the weft yarns are introduced, and a plurality of weft conductive yarns are woven until the upper surface and the lower surface of the inorganic thermoelectric block are completely covered, and the weaving of the third unit structure is completed;

[0015] S4.5, weaving the second unit structure again: the two fabric weaves are formed simultaneously when the weft yarns are introduced, and the weft yarns are replaced with non-conductive yarns; weaving again until the inorganic thermoelectric block is completely covered, at which time a plurality of one-sided closed pocket-shaped structures are formed in the weft direction;

[0016] S4.6, placing the inorganic thermoelectric blocks in the one-sided closed pocket-shaped structure, wherein the P-type inorganic thermoelectric blocks and the N-type inorganic thermoelectric blocks are arranged at intervals in the weft direction and the warp direction, and the upper surface and the lower surface of the inorganic thermoelectric blocks are tightly attached to the upper surface and the lower surface of the fabric, respectively, one fabric organization cycle is completed; starting the weaving of the next fabric organization cycle, after the first unit structure of the next fabric organization cycle is woven according to S4.2, the one-sided closed pocket-shaped structure of the current fabric organization cycle becomes a fully closed pocket-shaped structure, thereby forming a pocket-shaped space and completely wrapping the inorganic thermoelectric blocks therein;

[0017] S4.7, repeating S4.3-S4.6, and weaving to the designed length, and completing the weaving;

[0018] Step 5, heating the upper surface and the lower surface of the fabric, and welding the conductive yarns and the inorganic thermoelectric blocks conductive;

[0019] Step 6, removing all the conductive yarns in the float organization of the third unit structure in one of the upper surface and the lower surface of one pocket-shaped space, and simultaneously removing all the conductive yarns in the float organization of the third unit structure in the other of the upper surface and the lower surface of the four pocket-shaped spaces adjacent to the pocket-shaped space; after the entire fabric is processed in the above manner, all the inorganic thermoelectric blocks are connected in series, and a thermoelectric fabric is obtained.

[0020] Compared with the prior art, the present application has the following beneficial effects:

[0021] (1) The present application combines the thermoelectric principle with the textile technology, and through reasonable design of the fabric organization structure, pocket-shaped spaces of the same size are woven in the warp and weft directions, and the inorganic thermoelectric blocks are embedded in the fabric during the weaving of the pocket-shaped structure into a one-sided closed structure, which is integrally formed. The application overcomes the limitation of the inherent rigidity of the inorganic thermoelectric blocks as flexible thermoelectric materials, solves the key technical problem of the flexibility of inorganic thermoelectric materials, maintains excellent thermoelectric performance, has high flexibility, realizes three-dimensional deformation, maintains high thermoelectric conversion efficiency, realizes temperature difference refrigeration, and has good mechanical stability, washability and durability.

[0022] (2) The present application can adjust the thickness and performance of the thermoelectric fabric by changing the material, size and arrangement of the inorganic thermoelectric blocks; by using different functional yarns and different design of fabric organization structure, the thermoelectric fabric can be given diversified functions, such as using elastic yarns for non-conductive yarns to make the fabric flexible and elastic; using yarns with larger yarn count for the lower layer yarns and yarns with smaller yarn count for the upper layer yarns in the multi-layer fabric organization part can increase the wicking effect of the fabric, thereby increasing the thermal comfort of the fabric, etc.

[0023] (3) The thermoelectric fabric prepared by the present application can be cut arbitrarily, and the materials used can be recycled green.

[0024] (4) The present application is simple to operate, low in cost, and can be used to prepare large-area thermoelectric fabric on a large scale, thereby paving the way for commercial production of thermoelectric fabric.

[0025] (5) The thermoelectric fabric of the present application has been successfully applied to the field of intelligent wearable devices. The entire thermoelectric conversion system has good electrical conductivity and high thermoelectric conversion efficiency, and can realize temperature difference power generation and temperature difference refrigeration. Its high power density can power mobile electronic devices including mobile phones, and can also realize temperature regulation of the human body. The heating temperature difference can reach more than 20K, and the refrigeration temperature difference can reach more than 10K. It can also be applied to the fields of medical health, aerospace, military, etc. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is a schematic diagram of the overall structure of the thermoelectric fabric of the present application;

[0027] Figure 2 is a cross-sectional view of the thermoelectric fabric of the present application along the A-A direction; Figure 1

[0028] Figure 3 is a schematic diagram of the removal of all conductive yarns in the float stitch of step 6 of the present application;

[0029] Figure 4 is a distribution diagram of three unit structures of the present application;

[0030] Figure 5 is a drawing of the present application example 1 and example 2;

[0031] Figure 6 is a drawing of the present application example 1 and example 2;

[0032] Figure 7 is a drawing of the first unit structure of the present application example 1 and example 2;

[0033] Figure 8 is a drawing of the second unit structure of the present application example 1 and example 2;

[0034] Figure 9 is a drawing of the third unit structure of the present application example 1 and example 2;

[0035] Figure 10 is a diagram of the sustained refrigeration temperature difference of the thermoelectric fabric of the present application example 1 on the human body;

[0036] Figure 11 ​The figure of the current and power density of the thermoelectric fabric in Example 1 of the present application varying with the voltage density under different temperature differences;

[0037] Figure 12 The figure of the thermoelectric fabric woven in Example 1 of the present application.

[0038] In the figure, non-conductive yarn 1, inorganic thermoelectric block 2, conductive yarn 3. DETAILED DESCRIPTION

[0039] The specific embodiments of the present application are given below. The specific embodiments are only used to further illustrate the present application and do not limit the protection scope of the claims of the present application.

[0040] The present application provides a weaving method of embedded inorganic semiconductor-based thermoelectric fabric (referred to as method), characterized in that the method comprises the following steps:

[0041] Step 1, determine the size of the inorganic thermoelectric block 2 according to the design size of the thermoelectric fabric;

[0042] Preferably, in step 1, the thickness of the inorganic thermoelectric block 2 is ≤ the thickness of the thermoelectric fabric (preferably less than 2mm of the thickness of the thermoelectric fabric), and the width of the inorganic thermoelectric block 2 is less than the ratio of the overall width of the thermoelectric fabric to the number of inorganic thermoelectric blocks 2 along the weft direction.

[0043] Preferably, in step 1, the shape of the inorganic thermoelectric block 2 is a cuboid, a cylinder, a trapezoidal body or an hourglass type. The inorganic thermoelectric block 2 is made of inorganic semiconductor material.

[0044] Step 2, plating conductive material on the upper surface and lower surface of the inorganic thermoelectric block 2 for contact and conduction with the conductive yarn 3 on the upper surface and lower surface of the fabric;

[0045] Preferably, in step 2, the upper surface and lower surface of the inorganic thermoelectric block 2 are the two opposite surfaces with the largest temperature difference of the inorganic thermoelectric block 2.

[0046] Preferably, in step 2, the conductive material uses tin;

[0047] Step 3, before weaving, determine the length of the warp yarn and weft yarn according to the design size of the thermoelectric fabric; determine the size of each pocket-shaped space according to the size of the inorganic thermoelectric block 2;

[0048] Preferably, in step 3, the length of the warp yarn is 50-100cm longer than the overall length of the thermoelectric fabric, the length of the weft yarn is 5-10cm longer than the width of the thermoelectric fabric, and the size of the pocket-shaped space can completely wrap the inorganic thermoelectric block 2.

[0049] Step 4, during the weaving process, the specific steps are as follows:

[0050] S4.1, warp on machine: take several non-conductive yarns 1 from the yarn cylinder as warp yarns; then fix one end of the warp yarns on the back roller, and then carry out threading and reeding according to the weave pattern, and finally fix the other end of the warp yarns on the front roller;

[0051] S4.2, weaving the first unit structure: the fabric weave structure of the first unit structure is single-layer weave, and the weft yarns use non-conductive yarns 1; after weaving two non-conductive weft yarns 1, the weaving of the first unit structure is completed;

[0052] S4.3, weaving the second unit structure: the fabric weave structure of the second unit structure is composed of multi-layer weave (preferably double-layer weave) and single-layer weave, and the weft yarns still use non-conductive yarns 1; the two fabric weaves are formed at the same time when the weft yarns are introduced, and are woven to cover at least one-third of the inorganic thermoelectric block 2;

[0053] S4.4, weaving the third unit structure: the fabric weave structure of the third unit structure is composed of multi-layer weave (preferably double-layer weave) and float weave, and the weft yarns are replaced by conductive yarns 3; the two fabric weaves are formed at the same time when the weft yarns are introduced, and several weft conductive yarns 3 are woven until the upper surface and the lower surface of the inorganic thermoelectric block 2 are completely covered, and the weaving of the third unit structure is completed;

[0054] Preferably, in S4.4, the conductive yarns 3 are woven in even wefts, and more preferably in four wefts, six wefts, eight wefts and ten wefts.

[0055] S4.5, weaving the second unit structure again: the two fabric weaves are formed at the same time when the weft yarns are introduced, and the weft yarns are replaced by non-conductive yarns 1; weaving again until the inorganic thermoelectric block 2 is completely covered, at which time several single-sided closed pocket-like structures are formed in the weft direction;

[0056] S4.6, placing the inorganic thermoelectric block 2 in the single-sided closed pocket-like structure, wherein the P-type inorganic thermoelectric block and the N-type inorganic thermoelectric block are arranged at intervals in the weft direction and the warp direction (i.e. one P-type inorganic thermoelectric block is adjacent to N-type inorganic thermoelectric blocks in the warp direction and the weft direction, and one N-type inorganic thermoelectric block is adjacent to P-type inorganic thermoelectric blocks in the warp direction and the weft direction), and the upper surface and the lower surface of the inorganic thermoelectric block 2 are tightly attached to the upper surface and the lower surface of the fabric, respectively, and one fabric weave cycle is completed; start weaving of the next fabric weave cycle, and after weaving the first unit structure of the next fabric weave cycle according to S4.2, the single-sided closed pocket-like structure of the current fabric weave cycle becomes a fully closed pocket-like structure, thereby forming a pocket-like space and completely wrapping the inorganic thermoelectric block 2 therein;

[0057] S4.7, repeating S4.3-S4.6, weaving to the designed length, ending the weaving process, and taking off the machine, and the weaving is completed;

[0058] Preferably, in step 4, the fabric structure of the multi-layer structure and the single-layer structure is plain weave, twill weave or satin weave (preferably plain weave).

[0059] Preferably, in step 4, the conductive yarn 3 is a metal wire, a metal staple yarn, a carbon nanotube yarn or a carbon fiber.

[0060] Step 5, heat the upper surface and the lower surface of the fabric to weld the conductive yarn 3 with the inorganic thermoelectric block 2;

[0061] Preferably, in step 5, heating is performed using an electric soldering iron or a hot table.

[0062] Step 6, remove all conductive yarns 3 in the float weave of the third unit structure in one of the upper surface and the lower surface of one of the pocket-like spaces (the upper surface in this embodiment), while removing all conductive yarns 3 in the float weave of the third unit structure in the other of the upper surface and the lower surface of the four pocket-like spaces adjacent to the pocket-like space (the lower surface in this embodiment) (as shown in Figure 3 After the entire fabric is processed in the above manner, all the inorganic thermoelectric blocks 2 are connected in series to obtain a thermoelectric fabric.

[0063] Preferably, the method further comprises step 7: heat setting the thermoelectric fabric, so that the inorganic thermoelectric blocks 2 are more tightly wrapped by the fabric, which helps to improve the thermoelectric efficiency. Preferably, only the area containing the inorganic thermoelectric blocks 2 is heat set.

[0064] Embodiment 1

[0065] Step 1, the size of the thermoelectric fabric is 1000mm x 90mm, and the thickness is 5.5mm; the size of the inorganic thermoelectric block 2 is 2.5mm x 2.5mm x 5mm, which is divided into P-type and N-type;

[0066] Step 2, a conductive material is plated on the upper surface and the lower surface of the inorganic thermoelectric block 2; the melting point of the tin paste selected is 138℃;

[0067] Step 3, the length of the warp yarn is 1300mm, and the length of the weft yarn is 100mm; the length of the pocket-like space is 11mm, and the width is 10mm; the weft yarn of the float weave is a plated tin copper wire with a diameter of 0.1mm; the warp yarn of the float weave is a cotton yarn with a count of 10s / 2; except for the warp yarn and weft yarn of the float weave, the other warp and weft yarns are polyester yarns with a count of 40s / 2;

[0068] Step 4, weaving process: the weaving equipment used is a semi-automatic sample loom;

[0069] S4.1, warp on machine: select 2000 pieces of polyester yarn with a length of 1300 mm and 20 pieces of cotton yarn with a length of 1300 mm as warp yarns; then fix one end of the warp yarns on the back roller, sequentially perform threading and reeding according to the weave chart (as shown in Figure 6 ), and finally fix the other end of the warp yarns on the front roller; after threading all the warp yarns, adjust the tension;

[0070] Among them, the threading is specifically: 5 harness frames are used, the threading mode is forward threading, the first 4 harness frames are used to thread the polyester yarn, and 20 groups are sequentially forward threaded; the fifth harness frame is used to thread the cotton yarn, and 2 groups are threaded; the above process is repeated for 10 times.

[0071] Among them, the reeding is specifically: the steel reed number used is 88 (British); during the reeding process, the polyester yarn is reeded with 4 entries per reed, and the cotton yarn is reeded with 1 entry per reed due to the thicker yarn count; the reeding chart is as shown in Figure 5 .

[0072] S4.2, weaving the first unit structure: the single-layer weave of the first unit structure adopts plain weave, and the weft yarn uses polyester yarn with a count of 40s / 2; the first unit structure is used to complete the opening, weft insertion and beating-up procedures of the fabric in sequence, and the first unit structure is woven after weaving two wefts; Figure 7 .

[0073] S4.3, weaving the second unit structure: the multi-layer weave of the second unit structure adopts double-layer plain weave, the single-layer weave adopts plain weave, and the weft yarn adopts polyester yarn with a count of 40s / 2; the second unit structure is used to form two kinds of fabric structures simultaneously during weft insertion, and 16 wefts are woven; Figure 8 .

[0074] S4.4, weaving the third unit structure: the multi-layer weave of the third unit structure adopts double-layer plain weave, and the weft yarn adopts tinned copper wire; the third unit structure is used to form two kinds of fabric structures simultaneously during weft insertion, and 10 wefts are woven to completely cover the upper surface and the lower surface of the inorganic thermoelectric block 2; Figure 9 .

[0075] S4.5, weaving the second unit structure again: the multi-layer weave of the second unit structure adopts double-layer weave, the single-layer weave adopts plain weave, and the weft yarn adopts polyester yarn with a count of 40s / 2; the second unit structure is used to form two kinds of fabric structures simultaneously during weft insertion, and 16 wefts are woven, at this time, a plurality of single-sided closed pocket-shaped structures are formed in the weft direction; Figure 8 .

[0076] S4.6, put the inorganic thermoelectric block 2 into the one-sided closed pocket-shaped structure, wherein the P-type inorganic thermoelectric block and the N-type inorganic thermoelectric block are arranged at intervals in the weft direction and the warp direction, the upper surface and the lower surface of the inorganic thermoelectric block 2 are tightly attached to the upper surface and the lower surface of the fabric respectively, one fabric organization cycle is completed; start weaving of the next fabric organization cycle, after the first unit structure of the next fabric organization cycle is completed according to S4.2, the one-sided closed pocket-shaped structure of the current fabric organization cycle becomes a fully closed pocket-shaped structure, thereby forming a pocket-shaped space and completely wrapping the inorganic thermoelectric block 2 therein;

[0077] S4.7, repeat S4.3-S4.6, end the weaving process, and take out the fabric;

[0078] Step 5, heat the upper surface and the lower surface of the fabric using an electric soldering iron, and weld the tinned copper wire with the inorganic thermoelectric block 2 to be conductive;

[0079] Step 6, remove all tinned copper wires in the float organization of the third unit structure in the upper surface of one pocket-shaped space, and remove all tinned copper wires in the float organization of the third unit structure in the lower surface of four pocket-shaped spaces adjacent to the pocket-shaped space; after the entire fabric is processed in the above manner, all inorganic thermoelectric blocks 2 are connected in series, thereby obtaining a thermoelectric fabric;

[0080] Step 7, heat set the fabric, the heat setting temperature is controlled between 60-100℃, each piece of fabric is heat set 3-5 times, and the processing time of each time is 5-10s, and the temperature used for heat setting is actually adjusted according to the fabric shrinkage.

[0081] The woven thermoelectric fabric can realize temperature regulation for the human body, the heating temperature difference is greater than 20K, the refrigeration temperature difference is greater than 10K, and the refrigeration capacity is >200W / m 2 (as shown in Figure 10 ). Under a temperature difference of 25K, a power density of 6W / m 2 (as shown in Figure 11 ) can be generated. After being worn by the human body, if the temperature difference with the outside reaches 15K, the thermoelectric fabric can stably and continuously supply power for portable electronic products such as mobile phones.

[0082] Example 2

[0083] Step 1, the size of the thermoelectric fabric is 100mm×100mm, and the thickness is 2.5mm; the size of the inorganic thermoelectric block 2 is 2mm×2mm×2mm, which is divided into P-type and N-type;

[0084] Step 2, the conductive material is plated on the upper surface and the lower surface of the inorganic thermoelectric block 2; the melting point of the tin paste selected is 138℃;

[0085] Step 3, the length of warp yarn is 500mm, the length of weft yarn is 110mm; the length of pocket-like space is 8mm, the width is 8mm; the weft yarn of float stitch is core-spun yarn of tinned copper wire coated spandex, the count is 0.1mm+40D; the warp yarn of float stitch is core-spun yarn of cotton yarn coated spandex, the count is 16s / 2+40D; the warp and weft yarns except the warp and weft yarns of float stitch are core-spun yarn of polyester yarn coated spandex, the count is 60s / 2+40D;

[0086] Step 4, the weaving process: the weaving equipment used is semi-automatic sample loom;

[0087] S4.1, warp yarn on the machine: 200 pieces of core-spun yarn of polyester yarn coated spandex with a length of 500mm and 32 pieces of core-spun yarn of cotton yarn coated spandex are selected as warp yarns; then one end of the warp yarns is fixed on the back roller, the threading and reeding are sequentially carried out according to the weave chart (such as Figure 6 ), and finally the other end of the warp yarns is fixed on the front roller; after all the warp yarns are threaded, the tension is adjusted;

[0088] Among them, the threading of the reed is as follows: 5 harnesses are used, the threading mode is forward threading, the first 4 harnesses are used to thread the core-spun yarn of polyester yarn coated spandex, and 20 groups are sequentially forward threaded; the fifth harness is used to thread the core-spun yarn of cotton yarn coated spandex, and two groups are threaded; the above process is repeated for 16 times.

[0089] Among them, the threading of the reed is as follows: the steel reed number used is 78 (English system), during the threading of the reed, the polyester yarn is threaded into the reed with 4 entries per reed, and the cotton yarn is threaded into the reed with 1 entry per reed due to the thicker yarn count, and the threading chart is as shown in Figure 5 .

[0090] S4.2, weaving the first unit structure: the single-layer weave of the first unit structure adopts plain weave, and the weft yarn uses the core-spun yarn of polyester yarn coated spandex; the harness plate chart of the first unit structure (such as Figure 7 ) is used to sequentially complete the opening, weft insertion and beating-up procedures of the fabric, and the first unit structure is woven after two wefts are woven;

[0091] S4.3, weaving the second unit structure: the multi-layer weave of the second unit structure adopts double-layer plain weave, the single-layer weave adopts plain weave, and the weft yarn adopts the core-spun yarn of polyester yarn coated spandex; the harness plate chart of the second unit structure (such as Figure 8 ) is used, and the two kinds of fabric weaves are formed at the same time during weft insertion, and 12 wefts are woven;

[0092] S4.4, weaving the third unit structure: the multi-layer weave of the third unit structure adopts double-layer plain weave, and the weft yarn adopts the core-spun yarn of tinned copper wire coated spandex; the harness plate chart of the third unit structure (such as Figure 9As shown), two kinds of fabric organizations are formed at the same time when weft is introduced, 8 wefts are woven, and the upper surface and the lower surface of the inorganic thermoelectric block 2 are completely covered;

[0093] S4.5, weaving the second unit structure again: the multi-layer organization of the second unit structure adopts double-layer organization, the single-layer organization adopts plain weave, and the weft adopts polyester yarn covered spandex core-spun yarn; the second unit structure is woven by using the second unit structure loom plate diagram (as shown in the figure) Figure 8 As shown), two kinds of fabric organizations are formed at the same time when weft is introduced, 8 wefts are woven, and the upper surface and the lower surface of the inorganic thermoelectric block 2 are completely covered;

[0094] S4.6, the inorganic thermoelectric block 2 is put into the one-side closed pocket-shaped structure, wherein the P-type inorganic thermoelectric block and the N-type inorganic thermoelectric block are arranged at intervals in the weft direction and the warp direction, the upper surface and the lower surface of the inorganic thermoelectric block 2 are tightly attached to the upper surface and the lower surface of the fabric respectively, and one fabric organization cycle is completed; the weaving of the next fabric organization cycle is started, after the first unit structure of the next fabric organization cycle is woven according to S4.2, the one-side closed pocket-shaped structure of the current fabric organization cycle becomes a fully closed pocket-shaped structure, thereby forming a pocket-shaped space and completely wrapping the inorganic thermoelectric block 2 in the pocket-shaped space;

[0095] S4.7, repeating S4.3-S4.6, the weaving process is ended, and the machine is stopped;

[0096] Step 5, using an electric soldering iron to heat the upper surface and the lower surface of the fabric, the tinned copper wire covered spandex core-spun yarn is welded to the inorganic thermoelectric block 2 for conduction;

[0097] Step 6, all the tinned copper wire covered spandex core-spun yarns in the float organization of the third unit structure in the lower surface of one pocket-shaped space are removed, and at the same time, all the tinned copper wire covered spandex core-spun yarns in the float organization of the third unit structure in the upper surface of the four pocket-shaped spaces adjacent to the pocket-shaped space are removed; after the entire fabric is processed in the above manner, all the inorganic thermoelectric blocks 2 are connected in series, and the thermoelectric fabric is obtained.

[0098] The woven thermoelectric fabric has flexibility and elasticity, and the rebound rate is 20%.

[0099] The unmentioned parts of the application are applicable to the prior art.

Claims

1. A method for weaving an embedded inorganic semiconductor-based thermoelectric fabric, characterized in that, The method includes the following steps: Step 1: Determine the dimensions of the inorganic thermoelectric block based on the design dimensions of the thermoelectric fabric; Step 2: Plate conductive material onto the upper and lower surfaces of the inorganic thermoelectric block; Step 3: Before weaving, determine the lengths of the warp and weft yarns according to the design dimensions of the thermoelectric fabric; determine the dimensions of each pocket-shaped space according to the dimensions of the inorganic thermoelectric block; Step 4, the weaving process, the specific steps are as follows: S4.1 Warp yarn loading: Select several non-conductive yarns as warp yarns; then fix one end of the warp yarns on the back roller, and thread the hemp and reed in sequence according to the weave diagram, and finally fix the other end of the warp yarns on the front roller. S4.2 Weaving the first unit structure: The fabric structure of the first unit structure is a single-layer structure, and the weft yarns are non-conductive yarns; after weaving two wefts of non-conductive yarns, the weaving of the first unit structure is completed; S4.3 Weaving the second unit structure: The fabric structure of the second unit structure consists of a multi-layer structure and a single-layer structure, and the weft yarn uses non-conductive yarn; the two fabric structures are formed simultaneously when weft is inserted, and woven to cover at least one-third of the inorganic thermoelectric block; S4.4 Weaving the third unit structure: The fabric structure of the third unit structure consists of multi-layer structure and float structure, and the weft yarn is replaced with conductive yarn; the two fabric structures are formed simultaneously when weft is inserted, and several weft conductive yarns are woven until the upper and lower surfaces of the inorganic thermoelectric block are completely covered, and the weaving of the third unit structure is completed. S4.5, Weave the second unit structure again: The two fabric structures are formed simultaneously when weft is inserted, and the weft yarn is replaced with non-conductive yarn; weave again until the inorganic thermoelectric block is completely covered, at which point several uniformly spaced, one-sided closed pocket-shaped structures are formed along the weft direction. S4.6 Place an inorganic thermoelectric block inside a one-sided sealed pocket-like structure. The P-type and N-type inorganic thermoelectric blocks are spaced apart in both the weft and warp directions. The upper and lower surfaces of the inorganic thermoelectric blocks are in close contact with the upper and lower surfaces of the fabric, respectively. One fabric structure cycle is completed. Begin weaving the next fabric structure cycle. After completing the first unit structure of the next fabric structure cycle according to S4.2, the one-sided sealed pocket-like structure of the current fabric structure cycle becomes a fully sealed pocket-like structure, thereby forming a pocket-like space and completely enclosing the inorganic thermoelectric block. S4.

7. Repeat S4.3 to S4.6 until the designed length is reached, and weaving is complete; Step 5: Heat the upper and lower surfaces of the fabric to weld the conductive yarn to the inorganic thermoelectric block for conductivity; Step 6: Remove all conductive yarns from the float yarn structure of the third unit structure in one of the upper and lower surfaces of a pocket-shaped space. At the same time, remove all conductive yarns from the float yarn structure of the third unit structure in the other of the upper and lower surfaces of the four pocket-shaped spaces adjacent to this pocket-shaped space. After the entire fabric is processed in the above manner, connect all the inorganic thermoelectric blocks in series to obtain a thermoelectric fabric.

2. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In step 1, the thickness of the inorganic thermoelectric block is less than or equal to the thickness of the thermoelectric fabric, and the width of the inorganic thermoelectric block is less than the ratio of the overall width of the thermoelectric fabric to the number of inorganic thermoelectric blocks along the weft direction.

3. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In step 1, the inorganic thermoelectric block is in the shape of a cuboid, cylinder, trapezoid, or hourglass.

4. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In step 2, the upper and lower surfaces of the inorganic thermoelectric block are the two opposite surfaces with the largest temperature difference.

5. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In step 3, the length of the warp yarn is 50-100cm longer than the overall length of the thermoelectric fabric, and the length of the weft yarn is 5-10cm longer than the width of the thermoelectric fabric. The size of the pocket-shaped space is sufficient to completely enclose the inorganic thermoelectric block.

6. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In S4.4, the conductive yarn is woven with an even number of wefts.

7. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In S4.6, the adjacent inorganic thermoelectric blocks of a P-type inorganic thermoelectric block in both the longitudinal and latitudinal directions are all N-type inorganic thermoelectric blocks, and the adjacent inorganic thermoelectric blocks of an N-type inorganic thermoelectric block in both the longitudinal and latitudinal directions are all P-type inorganic thermoelectric blocks.

8. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, In step 4, the fabric weave structure of multi-layer and single-layer structures is plain weave, twill weave, or satin weave.

9. The weaving method of the embedded inorganic semiconductor-based thermoelectric fabric according to claim 1, characterized in that, The method also includes step 7: heat setting the thermoelectric fabric so that the inorganic thermoelectric mass is more tightly covered by the fabric.

Citation Information

Patent Citations

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