Apparatus for manufacturing evaporation mask and method for manufacturing evaporation mask

Abstract

A manufacturing apparatus of an evaporation mask includes: a support base material having a first surface for supporting a plated member; a first support member and a second support member provided on the first surface so as to surround an outer periphery of the plated member; and an electrode portion provided at a prescribed height from the first surface, the first support member having: a first wall portion provided on the first surface; and a first extension portion extending toward an inner side of the first surface at an upper portion of the first wall portion, the second support member having: a second wall portion provided on the first surface; and a second extension portion extending toward an inner side of the second wall portion at an upper portion of the second wall portion, the first wall portion having: a first portion in which a height decreases in a prescribed height range from the first surface; and a first step portion formed on an inner side of the first wall portion by the first portion, the second wall portion having a second step portion formed by the electrode portion extending toward an inner side of the second wall portion at a position at a prescribed height from the first surface.

Description

TECHNICAL FIELD

[0001] One embodiment of the present application relates to a manufacturing apparatus of an evaporation mask, and a manufacturing method of an evaporation mask using the manufacturing apparatus. BACKGROUND

[0002] In recent years, an organic EL display device using an organic EL element as a light emitting element is known. The organic EL element has an anode electrode, a cathode electrode, and a layer containing an organic EL material (hereinafter, referred to as an "organic EL layer") provided between the anode electrode and the cathode electrode. The organic EL layer contains, for example, a functional layer such as a light emitting layer, an electron injection layer, a hole injection layer, and the like. By applying a voltage to the anode electrode and the cathode electrode, respectively, a current flows between the anode electrode and the cathode electrode, and the organic EL element can emit light.

[0003] In forming a light emitting layer of an organic EL element, for example, a vacuum evaporation method can be used. The vacuum evaporation method is a method in which an evaporation material is sublimated by heating with a heater under vacuum and deposited (evaporated) on a surface of a substrate. By using the vacuum evaporation method, a thin film of the evaporation material can be formed on the surface of the substrate. In the vacuum evaporation method, by using a mask (evaporation mask) having a plurality of fine opening patterns, a high-fineness thin film pattern can be formed.

[0004] An electrofine forming mask (EFM) manufactured using an electroforming technique using an electric field plating (plating method) is one of evaporation masks. For example, a method of manufacturing an evaporation mask using an electroforming technique is disclosed in Patent Document 1.

[0005] PRIOR ART DOCUMENTS

[0006] PATENT DOCUMENT

[0007] Patent Document 1: Japanese Patent Application Publication No. 2017-210633 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] For example, when an organic EL display device is manufactured using a damaged evaporation mask, the light emitting layer of the organic EL element corresponding to the damaged portion of the evaporation mask cannot be normally evaporated. For example, when there is a defect such as a clogging of a fine opening pattern due to a manufacturing failure of the evaporation mask, the organic EL element of the organic EL display device manufactured using the evaporation mask including the defect cannot be evaporated with a light emitting layer. The organic EL element which is not evaporated with a light emitting layer does not emit light, and thus, the organic EL display device can have a display failure. In addition, when there is a defect such as a connection of opening patterns which should be separated due to a manufacturing failure of the evaporation mask, the organic EL element of the organic EL display device manufactured using the evaporation mask including the defect can form a light emitting layer in a region where the light emitting layer should not be formed, and can have a failure in separation of elements. Therefore, in the manufacturing of the evaporation mask, a technique is required in which not only a plurality of fine opening patterns can be formed with high precision, but also defects can not be generated. In addition, a device (evaporation mask manufacturing device) which can manufacture an evaporation mask without defects is required.

[0010] An object of one embodiment of the present application is to provide a manufacturing device of an evaporation mask and a manufacturing method of an evaporation mask which can suppress defects.

[0011] Means for solving the technical problem

[0012] One embodiment of the present application provides a manufacturing device of an evaporation mask including: a support base material having a first surface for supporting a plated member; a first support member and a second support member provided on the first surface so as to surround the outer periphery of the plated member; and an electrode portion provided at a predetermined height from the first surface, the first support member has a first wall portion provided on the first surface and a first extension portion extending inward of the first surface at an upper portion of the first wall portion, the second support member has a second wall portion provided on the first surface and a second extension portion extending inward of the second wall portion at an upper portion of the second wall portion, the first wall portion has a first portion in which the height is reduced in a range of the predetermined height from the first surface, and a first step portion formed inward of the first wall portion by the first portion, the second wall portion has a second step portion formed inward of the second wall portion at a position apart from the first surface by the predetermined height by the electrode portion, and the first support member and the second support member are arranged so that the plated member can be sandwiched between the first step portion and the second step portion and the first surface.

[0013] One embodiment of the present invention provides a method for manufacturing a vapor deposition mask, comprising: a step of forming a first resist mask with a first film thickness in an inner region of a second surface; and a step of forming a release layer on a second surface of the first resist mask on a side where a first step portion is provided and on a side opposite to the side where the first step portion is provided, using a vapor deposition mask manufacturing apparatus, wherein the vapor deposition mask manufacturing apparatus comprises: a support base having a first surface for supporting a part to be deposited; a first support member and a second support member disposed on the first surface in a manner surrounding the outer periphery of the part to be deposited; and an electrode portion disposed at a predetermined height spaced from the first surface, the first support member having: a first wall portion disposed on the first surface; and a first extension portion extending inward from the upper portion of the first wall portion toward the inner side of the first surface, the second support member having: a second wall portion disposed on the first surface; and a second extension portion extending inward from the upper portion of the second wall portion toward the inner side of the first surface, the first wall portion having: a portion extending inward from the first surface... The specified height range, a first portion of reduced height; and a first step portion formed on the inner side of the first wall portion using the first portion, the second wall portion having a second step portion formed by the electrode portion extending into the inner side of the second wall portion at a position at a specified height from the first surface, the first support member and the second support member being configured to clamp the plated component between the first step portion and the second step portion and the first surface, the first protrusion and the second protrusion covering a portion of the second surface of the plated component, the length of the second protrusion covering the second surface being greater than the length of the first protrusion covering the plated component, and in cross-section, the distance between the end of the second protrusion and the end of the first resist mask disposed on the second surface is equal to the distance between the end of the first protrusion and the end of the first resist mask, the distance between the second protrusion and the second surface is 10 mm, and the distance between the end of the second protrusion and the end of the first resist mask is 4 mm. Attached Figure Description

[0014] Figure 1 A schematic plan view showing a vapor deposition mask unit manufactured by a method according to one embodiment of the present invention.

[0015] Figure 2 Indicates along Figure 1 The cross-sectional structure of line A1-A2 is shown.

[0016] Figure 3 (A) Figure 3 (B) and Figure 3 (C) is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask according to one embodiment of the present invention.

[0017] Figure 4 (A) and Figure 4 (B) of FIG. 1 are schematic cross-sectional views showing a method of manufacturing a vapor deposition mask of an embodiment of the present application.

[0018] Figure 5 is a schematic plan view showing an apparatus for manufacturing a vapor deposition mask of an embodiment of the present application.

[0019] Figure 6 is a schematic plan view showing an apparatus for manufacturing a vapor deposition mask of an embodiment of the present application.

[0020] Figure 7 (A) of FIG. 3 shows a cross-sectional structure along Figure 6 B1-B2 shown in FIG. 4, Figure 7 (B) of FIG. 3 shows a cross-sectional structure along Figure 6 C1-C2 shown in FIG. 5.

[0021] Figure 8 is a schematic plan view showing an apparatus and a method for manufacturing a vapor deposition mask of an embodiment of the present application.

[0022] Figure 9 (A) of FIG. 7 shows a cross-sectional structure along Figure 8 D1-D2 shown in FIG. 8, Figure 9 (B) of FIG. 7 shows a cross-sectional structure along Figure 8 E1-E2 shown in FIG. 9.

[0023] Figure 10 is a graph showing a relationship between a film thickness of an outermost portion of a peeling layer and a height of a protruding portion when a plating process is performed using an apparatus for manufacturing a vapor deposition mask of an embodiment of the present application.

[0024] Figure 11 (A) and Figure 11 (B) of FIG. 11 are schematic cross-sectional views showing a method of manufacturing a vapor deposition mask of an embodiment of the present application.

[0025] Figure 12 (A) and Figure 12 (B) of FIG. 13 are schematic cross-sectional views showing a method of manufacturing a vapor deposition mask of an embodiment of the present application.

[0026] Figure 13 (A), Figure 13 (B) and Figure 13 (C) of FIG. 15 are schematic cross-sectional views showing a method of manufacturing a vapor deposition mask of an embodiment of the present application.

[0027] Figure 14 (A) and Figure 14(B) is a schematic cross-sectional view showing a method of manufacturing the evaporation mask of one embodiment of the present application.

[0028] Figure 15 (B) is a schematic cross-sectional view showing a method of manufacturing the evaporation mask unit of one embodiment of the present application.

[0029] Figure 16 (A) and Figure 16 (B) is a schematic cross-sectional view showing a method of manufacturing the evaporation mask unit of one embodiment of the present application.

[0030] Figure 17 (A) and Figure 17 (B) is a schematic cross-sectional view showing a method of manufacturing the evaporation mask unit of one embodiment of the present application. DETAILED DESCRIPTION

[0031] Hereinafter, embodiments of the present application will be described with reference to drawings. However, the present application can be implemented in many different ways, and is not construed as being limited to the description of the following examples. In order to make the description clearer, the width, the thickness, the shape, and the like of each portion shown in the drawings are sometimes schematically shown compared to actual ones, but this is only an example, and is not intended to limit the interpretation of the present application. In addition, in the present specification and each drawing, the same reference numerals (or the same reference numerals followed by different letters) are assigned to the same components throughout the specification and each drawing, and sometimes detailed description will be omitted. In addition, the words "first", "second", and the like added to each component are used for convenience in order to distinguish each component, and do not have any meaning other than that, unless otherwise specified.

[0032] In the present specification, in the case where it is expressed that a certain component or region is "on (or below) another component or region", unless otherwise specified, it is not only the case where the certain component or region is directly on (or directly below) the other component or region, but also the case where the certain component or region is on (or below) the other component or region, that is, the case where other components or regions are included between the certain component or region and the other component or region on (or below) the other component or region.

[0033] In addition, in the present specification, the expressions "α includes A, B, or C", "α includes any one of A, B, and C", "α includes one selected from A, B, and C", and the like, unless otherwise specified, do not exclude the case where α includes a combination of a plurality of A to C. Furthermore, these expressions do not exclude the case where α includes other components.

[0034] <1. Structure of evaporation mask unit 100>

[0035] Figure 1 is a schematic plan view of the evaporation mask unit 100. Figure 2 is a cross-sectional structure of A1 and A2 shown in Figure 1 Figure 1 and Figure 2 The structure of the evaporation mask unit 100 shown in Figure 1 and Figure 2 is an example, and the structure of the evaporation mask unit 100 is not limited to

[0036] As shown in Figure 1 , the evaporation mask unit 100 includes at least one evaporation mask 102, a support frame 108 that surrounds the at least one evaporation mask 102, and a connecting portion 106 for connecting the support frame 108 and the at least one evaporation mask 102. In Figure 1 , the at least one evaporation mask 102 is composed of a plurality of evaporation masks 102, and the plurality of evaporation masks 102 are respectively fixed to the support frame 108 via the connecting portion 106.

[0037] As shown in the enlarged view of Figure 1 , the evaporation mask 102 has a plurality of openings 103. In the evaporation mask 102, the plurality of openings 103 are arranged in a prescribed region to form a mask pattern 104. The evaporation mask 102 can include a plurality of mask patterns 104. The evaporation mask 102 is connected to the connecting portion 106 in a region where the mask pattern 104 is not formed, and is held on the support frame 108.

[0038] As shown in Figure 2 , the evaporation mask 102 is a plate-like member, and the plurality of openings 103 are through-holes that penetrate the plate-like member. The evaporation mask 102 can be formed using a metal material, and details will be described later. In order to support the evaporation mask 102 as a flat plate, the support frame 108 is provided. In order to hold the plurality of evaporation masks 102, a lattice-shaped frame can be provided in the support frame 108. In the evaporation mask unit 100, the support frame 108 corresponds to the size of the mother glass substrate, the mask pattern 104 is arranged corresponding to each display panel produced in the mother glass substrate, and the plurality of openings 103 are arranged corresponding to the arrangement of pixels in the display panel.

[0039] The connecting portion 106 has a function of connecting the evaporation mask 102 and the support frame 108, and fixing them to each other. Therefore, although the support frame 108 is not in direct contact with the evaporation mask 102, the connecting portion 106 is in contact with the evaporation mask 102 at a non-opening portion (a region where the mask pattern 104 is not formed) of the evaporation mask 102, and is in contact with the side surface of the support frame 108.

[0040] ​also, Figure 1 and Figure 2 The example shown illustrates a manner in which multiple vapor deposition masks 102 are held on a support frame 108, but one embodiment of the invention is not limited thereto. For example, it may also be a structure in which a single vapor deposition mask 102 is held on the support frame 108 via a connecting portion 106.

[0041] The vapor deposition mask unit 100 of one embodiment of the present invention can be used in the manufacturing process of a display panel, specifically in the process of forming an organic EL element. More specifically, it can be used in the process of forming the light-emitting layer of the organic EL element using a vacuum vapor deposition method. In the process of forming the light-emitting layer, the vapor deposition area on the mother glass substrate side is configured to match the mask pattern 104 on the vapor deposition mask 102 side, and the vapor deposition material is deposited in the vapor deposition area through a plurality of openings 103.

[0042] The vapor deposition mask 102 and the connector 106 can be formed using zero-valent metals such as nickel (Ni), copper (Cu), titanium (Ti), and chromium (Cr). That is, the release layer 116 and the connector 106 have a metal film. The material composition of the vapor deposition mask 102 and the connector 106 can be the same as each other. Similarly, the support frame 108 can also be formed using zero-valent metals such as nickel (Ni), iron (Fe), cobalt (Co), chromium (Cr), and manganese (Mn). For example, the material composition of the support frame 108 can be an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy may contain carbon (C).

[0043] <2. Manufacturing method of vapor deposition mask unit 100>

[0044] Figure 3 (A) Figure 4 (B) is a schematic cross-sectional view illustrating the manufacturing method of the vapor deposition mask 102. Figure 5 and Figure 6 This is a schematic plan view showing the manufacturing method of the vapor deposition mask 102 and the vapor deposition mask manufacturing apparatus 150. Figure 7 (A) is along Figure 6 The cross-sectional structure of B1-B2 shown is as follows: Figure 7 (B) is along Figure 6 The cross-sectional structure of C1-C2 shown is as follows. Figure 8 This is a schematic cross-sectional view showing the manufacturing method of the vapor deposition mask 102 and the vapor deposition mask manufacturing apparatus 150. Figure 9 (A) is along Figure 8 The cross-sectional structure of D1-D2 shown is as follows. Figure 9 (B) is along Figure 8A cross-sectional structure of E1-E2 shown, Figure 10 A graph of a relationship of a film thickness of an outermost periphery of a peeling layer 116 with respect to a height of a protrusion when a plating process is performed using a vapor deposition mask manufacturing apparatus 150, Figure 11 (A) to Figure 17 (B) of FIG. 10 is a schematic cross-sectional view showing a manufacturing method of the vapor deposition mask 102. Figure 3 (A) to Figure 17 The manufacturing method of the vapor deposition mask 102 or the structure of the vapor deposition mask manufacturing apparatus 150 shown in (A) to Figure 3 (A) to Figure 17 (B) is not limited to the structure shown in (A) to Figure 1 (A) to Figure 2 The same or similar structures are omitted here.

[0045] Figure 3 (A) of FIG. 10 shows a stage of forming the first resist mask 114 on the second face 110A of the first support substrate 110. In one embodiment of the present application, the first support substrate 110 is made of metal. The first support substrate 110 can be formed using, for example, a metal material such as copper (Cu), aluminum (Al), titanium (Ti), iron (Fe), nickel (Ni), cobalt (Co), chromium (Cr), molybdenum (Mo), manganese (Mn), or an alloy thereof. The alloy can be, for example, an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and can contain carbon (C). For example, the first support substrate 110 can be formed of stainless steel containing iron (Fe) as a main component and containing chromium (Cr) and nickel (Ni). In addition, in one embodiment of the present application, an example is given in which the first support substrate 110 is made of metal, but the first support substrate 110 is not limited to being made of metal. For example, the first support substrate 110 can be formed of an insulator such as glass, quartz, ceramic, or plastic. In one embodiment of the present application, the first support substrate 110 is sometimes referred to as a plating target.

[0046] The first resist mask 114 is formed by photolithography using a photosensitive resin material. As the photosensitive resin material, a coating-type photoresist or a dry film resist (DFR) can be used. When a plurality of vapor deposition masks 102 are arranged in the vapor deposition mask unit 100 shown in Figure 1 (A) to

[0047] Figure 3(B) indicates the stage of forming the release layer 116. Details of the stage of forming the release layer 116 will be explained later. The release layer 116 is formed on the second surface 110A of the first support substrate 110 on which the first resist mask 114 is formed, in the area exposed from the frame-shaped first resist mask. Specifically, using the vapor deposition mask manufacturing apparatus 150, the release layer 116 is formed on both the side of the first resist mask 114 on the second surface 110A where the first step portion 156A is provided and the opposite side of the side where the first step portion 156A is provided. That is, the release layer 116 is formed on a portion of the second surface 110A where the first resist mask 114 is not provided. The release layer 116 can be formed, for example, using the same metallic material as the material used to form the vapor deposition mask 102. That is, the release layer 116 has a metallic film. The release layer 116 can be formed using, for example, a zero-valent metallic material such as nickel (Ni), copper (Cu), titanium (Ti), or chromium (Cr). The release layer 116 can be formed using a plating method. For example, the release layer 116 can be fabricated on the first support substrate 110 by nickel plating. When the release layer 116 is formed using a plating method, the first support substrate 110 can be cleaned and a release agent can be applied to the second surface 110A.

[0048] Figure 3 (C) indicates the stage of removing the first photoresist mask 114. The first photoresist mask 114 is removed using a stripping solution. An opening 118 is formed in the area where the first photoresist mask 114 has been removed. In other words, the first photoresist mask 114 is removed from the first support substrate 110, and the release layer 116 is separated into an inner region 120 and an outer region 122 through the opening 118.

[0049] In the case of forming the peeling layer 116, it is preferable to... Figure 4 As shown in (A), the film thickness d1 of the first resist mask 114 is formed to be the same as or approximately the same as the designed film thickness d2 of the release layer 116. When the release layer 116 is formed by plating, the release layer 116 grows from the second surface 110A of the conductive first support substrate 110 in the direction of increasing film thickness. By setting the film thickness to a level where the upper surface of the first resist mask 114 will not contact the release layer 116 when the release layer 116 grows to the desired designed film thickness d2, the subsequent stripping process of the first resist mask 114 can be performed well.

[0050] Generally, during the formation of the release layer 116, the electric field is concentrated at the outermost periphery of the vapor deposition mask 102. As a result, the film thickness at the outermost periphery of the vapor deposition mask 102 is greater than the film thickness on the inner side of the mask. Therefore, as... Figure 4As shown in (B) of FIG. 1, when the peeling layer 116 is formed thicker (d2 > dl) than the first resist mask 114, the peeling layer 116 grows in a manner to cover the upper surface of the first resist mask 114. When the first resist mask 114 is removed in this state, a part of the peeling layer 116 is peeled off to become a problem. That is, when the first resist mask 114 is immersed in a peeling liquid, swelling occurs, and in conjunction therewith, a part of the peeling layer 116 that covers the upper surface of the first resist mask 114 is pushed upward, and thus the peeling layer 116 is peeled off. When the peeling layer 116 is peeled off, the evaporation mask 102 formed thereafter on the peeling layer 116 becomes a defective product that is broken. When an organic EL display device is manufactured using the broken evaporation mask, the organic EL element corresponding to the broken part of the evaporation mask is not evaporated with a light emitting layer. The organic EL element that is not evaporated with the light emitting layer does not emit light, and thus display defects become a problem in the organic EL display device.

[0051] As described above, the peeling layer 116 formed by the plating method has a tendency that the film thickness becomes large in the vicinity of the outermost periphery where the film growth is easily promoted compared to the central portion. Therefore, when the condition is set so that the film thickness of the peeling layer 116 in the vicinity of the outermost periphery does not exceed the film thickness of the first resist mask 114, there is a case where the film thickness of the peeling layer 116 in the vicinity of the central portion is insufficient.

[0052] To eliminate such a defective condition, in the manufacturing method of the evaporation mask 102 of one embodiment of the present application, the peeling layer 116 is formed using the evaporation mask manufacturing apparatus 150 shown in (A) of FIG. 2. Figure 5 The peeling layer 116 is formed using the evaporation mask manufacturing apparatus 150 shown in (A) of FIG. 2. Figure 3 The peeling layer 116 is formed using the evaporation mask manufacturing apparatus 150 shown in (A) of FIG. 2. Figure 5 The peeling layer 116 is formed using the evaporation mask manufacturing apparatus 150 shown in (A) of FIG. 2. Figure 6 The peeling layer 116 is formed using the evaporation mask manufacturing apparatus 150 shown in (A) of FIG. 2. Figure 4 The peeling layer 116 is formed using the evaporation mask manufacturing apparatus 150 shown in (A) of FIG. 2.

[0053] Figure 5 (A) of FIG. 2 shows a manner in which the second support member 164 is detached from the first surface 151 A of the support base material 151 (A) in the evaporation mask manufacturing apparatus 150, as one example, the second support member 164 is a detachable member, and the second support member 164 is detached from the first surface 151 A of the support base material 151 (A). Figure 7 (A) of FIG. 2 shows a manner in which the second support member 164 is detached from the first surface 151 A of the support base material 151 (A) in the evaporation mask manufacturing apparatus 150, as one example, the second support member 164 is a detachable member, and the second support member 164 is detached from the first surface 151 A of the support base material 151 (A). Figure 6 (A) of FIG. 2 shows a manner in which the second support member 164 is detached from the first surface 151 A of the support base material 151 (A) in the evaporation mask manufacturing apparatus 150, as one example, the second support member 164 is a detachable member, and the second support member 164 is detached from the first surface 151 A of the support base material 151 (A). Figure 7 (A) of FIG. 2 shows a manner in which the second support member 164 is detached from the first surface 151 A of the support base material 151 (A) in the evaporation mask manufacturing apparatus 150, as one example, the second support member 164 is a detachable member, and the second support member 164 is detached from the first surface 151 A of the support base material 151 (A). Figure 5 (A) of FIG. 2 shows a manner in which the second support member 164 is detached from the first surface 151 A of the support base material 151 (A) in the evaporation mask manufacturing apparatus 150, as one example, the second support member 164 is a detachable member, and the second support member 164 is detached from the first surface 151 A of the support base material 151 (A). Figure 6 (A) of FIG. 2 shows a manner in which the second support member 164 is detached from the first surface 151 A of the support base material 151 (A) in the evaporation mask manufacturing apparatus 150, as one example, the second support member 164 is a detachable member, and the second support member 164 is detached from the first surface 151 A of the support base material 151 (A). Figure 8The receiving portion 152; and the outer edge portion 111 covering the first support substrate 110. Figure 8 The frame-shaped portion 154. The storage portion 152 is provided between the support base 151 and the frame-shaped portion 154.

[0054] The frame portion 154 includes: a first support member 162; a second support member 164; and a method for fixing the first support member 162 to the first surface 151A of the support base 151. Figure 7 (A)) fixing components 166A and 166B; and for fixing the second support component 164 to the first surface 151A of the support base 151. Figure 7 (A)) The fixing member 168. In addition, the frame-shaped part 154 has an opening 190 provided by the first support member 162 and the second support member 164.

[0055] The first support member 162 has a first protrusion 162A. Figure 7 (A) Figure 7 (B)) and the first wall portion 157A. The first support member 162 has a U-shaped shape when viewed from above. The U-shaped shape includes a first side 190A, a second side 190B, and a third side 190C. The first side 190A is opposite to (opposite to) the fourth side 190D included in the second support member 164. The second side 190B is opposite to (opposite to) the third side 190C. The first protrusion 162A ( Figure 7 (A) Figure 7 (B)) and the first wall portion 157A are provided on the first surface 151A of the supporting base material 151. Figure 7 The first wall portion 157A is disposed on the upper part of the first surface 151A of the supporting base 151, between the first surface 151A and the first protrusion 162A, in contact with the first surface 151A and the first protrusion 162A. The first protrusion 162A is disposed on the upper part of the first wall portion 157A in such a way that it extends inward toward the first surface 151A. The first support member 162 is detachably fixed to the first surface 151A of the supporting base 151 by fixing members 166A, 166B and 166C. The number of fixing members 166 is arbitrary. In one embodiment of the present invention, the number of fixing members 166 is, for example, eight.

[0056] The second support member 164 has an electrode portion 163, a third support member 165, a fourth side 190D, a second protrusion 165A, and a second wall portion 157B. The electrode portion 163, the third support member 165, the fourth side 190D, the second protrusion 165A, and the second wall portion 157B are disposed on the first surface 151A of the support base material 151. Figure 7The second wall portion 157B is provided on the upper portion of the first face 151A of the support base material 151 between the first face 151A of the support base material 151 and the second protruding portion 165A in contact with the first face 151A of the support base material 151 and the second protruding portion 165A. The electrode portion 163 is provided on the upper portion of the first face 151A of the support base material 151 between the first face 151A and the second protruding portion 165A in contact with the second protruding portion 165A. The second protruding portion 165A is provided on the upper portion of the electrode portion 163 in contact with the electrode portion 163 and protruding toward the inner side of the first face 151A. The second support member 164 is detachably fixed to the first face 151A of the support base material 151 by the fixing member 168 Figure 7 The number of the fixing members 168 is arbitrary. The third support member 165 is provided so as to surround the electrode portion 163. In one embodiment of the present application, the number of the fixing members 168 is, for example, two. For example, by making at least either one of the first support member 162 and the second support member 164 detachable with respect to the first face 151A of the support base material 151 Figure 7 (A), it is possible to store the first support substrate 110 Figure 8 in the storage portion 152 and to detach the first support substrate 110 from the storage portion 152 Figure 8 .

[0057] As Figure 6 , Figure 7 (A) and Figure 7In the manner in which the second support member 164 is mounted on the first face 151A, the first support member 162 is disposed adjacent to the second support member 164, the first protruding portion 162A is disposed adjacent to the second protruding portion 165A, the first step portion 156A is disposed adjacent to the second step portion 156B, and the first wall portion 157A is disposed adjacent to the second wall portion 157B, as shown in (B). In addition, the opening portion 190 is composed of four sides, a first side 190A, a second side 190B, a third side 190C, and a fourth side 190D. The length LI is the length of the first side 190A and the fourth side 190D, and is also the length between the first protruding portion 162A and the second protruding portion 165A. The length L2 is the length of the second side 190B and the third side 190C, and is also the length between the first protruding portion 162A and the first protruding portion 162A. In addition, the length L3 of the receiving portion 152 is a length corresponding to the length LI of the opening portion 190, and the length L4 of the receiving portion 152 is a length corresponding to the length L2 of the opening portion 190. The length L3 of the receiving portion 152 is also the length between the first step portion 156A and the second step portion 156B. The length L4 of the receiving portion 152 is also the length of the first protruding portion 162A and the second protruding portion 165A. In addition, in one embodiment of the present application, the length is also referred to as a distance.

[0058] The length LI is shorter (smaller) than the length L2, the length L3 is shorter (smaller) than the length L4, the length LI is shorter (smaller) than the length L3, and the length L2 is shorter (smaller) than the length L4. That is, the opening portion of the opening portion 190 is smaller than the receiving portion 152. In addition, the opening portion of the opening portion 190 is smaller than the first support substrate 110. Therefore, the first support substrate 110 can be reliably received and fixed in the receiving portion 152, and thus the position of the first support substrate 110 does not shift when the deposition mask manufacturing apparatus 150 is immersed in a plating bath. As a result, the film thickness of the separation layer 116 formed on the first support substrate 110 is uniformly formed in the center portion and the outer peripheral portion of the separation layer 116, and the separation layer 116 is uniformly formed in the plane. In one embodiment of the present application, the length LI is sometimes referred to as a first width, the length L2 is sometimes referred to as a second width, the length L3 is sometimes referred to as a third width, and the length L4 is sometimes referred to as a fourth width.

[0059] According to Figure 7 (A) and Figure 7(B) Fixing member 166A is provided through the opening 176A of the first support member 162 and the opening 186A of the support base 151. Fixing member 166B is provided through the opening 176B of the first support member 162 and the opening 186B of the support base 151. Fixing member 166C is provided through the opening 176C of the first support member 162 and the opening 186C of the support base 151. Thus, the first support member 162 can be mounted and fixed on the first surface 151A. In addition, the second support member 164 can be mounted and fixed on the first surface 151A by means of fixing member 168 being provided through the opening 178 of the third support member 165, the opening 173 of the electrode part 163, and the opening 186D of the support base 151.

[0060] like Figure 7 As shown in (A), the first wall portion 157A has a first part 157C and a first stepped part 156A. The first part 157C is provided such that its height decreases within a predetermined height K range from the first surface 151A. The first stepped part 156A is provided on the inner side of the first wall portion 157A by means of the first part 157C. The second wall portion 157B has a second stepped part 156B. The second stepped part 156B is formed by an electrode part 163 extending into the inner side of the second wall portion 157B at a predetermined height K away from the first surface 151A. The electrode part 163 is provided at a predetermined height K away from the first surface 151A and extends to the opposite side relative to the second protrusion 165A of the second support member 164 (third support member 165). Because the electrode part 163 extends to the opposite side relative to the second protrusion 165A, connecting members such as clips can be easily connected to the electrode part 163. As a result, during the plating process described later, it is easy to apply voltage to the electrode portion 163 via the connecting member.

[0061] Figure 8 , Figure 9 (A) and Figure 9 (B) indicates the stage in which the release layer 116 is formed using the vapor deposition mask manufacturing apparatus 150. In the following description, the distinction between (B) and (C) is sometimes omitted. Figures 1-7 (B) Description of the same or similar structure.

[0062] like Figure 8 , Figure 9 (A) and Figure 9As shown in (B), during the stage of forming the release layer 116, the first support substrate 110 is housed and fixed to the housing portion 152. Specifically, the first support substrate 110 is placed on the first surface 151A of the support base material 151, and at least two sides of the periphery of the first support substrate 110 abut against at least two sides of the U-shaped corner of the first support member 162. For example, the two sides of the first support substrate 110 abut against the first side 190A and the second side 190B (third side 190C) of the housing portion 152.

[0063] At this time, circle 162C (as shown by the dashed line of the first support substrate 110) Figure 9 As shown in (A), the outer edge 111 of one side of the first support substrate 110 abuts against the first step portion 156A. In other words, a portion of the outer edge 111 of the first support substrate 110 is embedded in the first step portion 156A of the first support member 162, and the first support substrate 110 is sandwiched between the first surface 151A and the first step portion 156A.

[0064] Next, the second support member 164 is installed and fixed onto the first surface 151A of the support base 151. At this time, circle 164C (as shown by the dashed line) Figure 9 As shown in (A), the outer edge 111 of one side of the first support substrate 110 abuts against the second stepped portion 156B. In other words, a portion of the outer edge 111 of the first support substrate 110 is embedded in the second stepped portion 156B of the second support member 164, and the first support substrate 110 is sandwiched between the first surface 151A and the second stepped portion 156B. A portion of the second surface 110A of the first support substrate 110 is exposed relative to the opening 190, and the remaining portion of the second surface 110A of the first support substrate 110 is covered by the frame portion 154.

[0065] As a result, the first support member 162 and the second support member 164 are disposed on the first surface 151A in a manner that surrounds the outer periphery of the first support substrate 110. In addition, the first surface 151A of the support base material 151 is capable of supporting the first support substrate 110.

[0066] Next, the vapor deposition mask manufacturing apparatus 150, which houses the first support substrate 110, is immersed in a plating bath. A plating process is performed by applying a voltage between a solution containing a metallic material filled in the plating bath and the electrode portion 163. Using the vapor deposition mask manufacturing apparatus 150, a release layer 116 grows from the second surface 110A of the conductive first support substrate 110 in the direction of increasing film thickness, thus forming a release layer 116 on the second surface 110A of the first support substrate 110. In other words, the release layer 116 is provided on both the side where the first step portion 156A is provided and the opposite side of the side where the first step portion 156A is provided, relative to the first resist mask 114 provided on the second surface 110A. That is, the release layer 116 is provided on a portion of the second surface 110A where the first resist mask 114 is not provided. The release layer 116 has a metallic film formed using a metallic material.

[0067] like Figure 9 As shown in (A), the first support member 162 or the first protrusion 162A covers a portion of the second surface 110A of the first support substrate 110 and the first resist mask 114. In the cross-sectional structure along D1-D2 (when viewed from the cross-section), the distance H between the portion of the first protrusion 162A facing the first support substrate 110 and the second surface 110A is, for example, 10 mm. Furthermore, the distance W between the end of the first protrusion 162A of the first support member 162 and the end of the first resist mask 114 disposed on the second surface 110A is, for example, 4 mm. In this case, the designed film thickness d2 of the release layer 116 is 120 μm. In one embodiment of the invention, the distance H is also referred to as the height of the protrusion, and the distance W is also referred to as the coverage width.

[0068] The second support member 164 or the second protrusion 165A covers a portion of the second surface 110A of the first support substrate 110 and the first resist mask 114. In the cross-sectional structure along D1-D2 (when viewed from the cross-section), the distance H between the portion (surface) of the second protrusion 165A facing the first support substrate 110 and the second surface 110A is, for example, 10 mm. The distance W between the end of the second protrusion 165A of the third support member 165 and the end of the first resist mask 114 disposed on the second surface 110A is, for example, 4 mm. The length of the second protrusion 165A covering the first support substrate 110 is longer (greater) than the length of the first protrusion 162A covering the first support substrate 110.

[0069] like Figure 9As shown in (B), the first support member 162 covers the first resist mask 114 and the first support substrate 110. Furthermore, similar to the cross-sectional structure along D1-D2 (when viewed from the cross-section), in the cross-sectional structure along E1-E2 (when viewed from the cross-section), the distance H between the portion (surface) of the first protrusion 162A facing the first support substrate 110 and the second surface 110A is 10 mm, the distance W between the end of the first protrusion 162A and the end of the first resist mask 114 disposed on the second surface 110A is 4 mm, and the designed film thickness d2 of the release layer 116 is 120 μm.

[0070] When the first support substrate 110 is housed and fixed in the housing portion 152, the first support substrate 110 abuts against at least two sides of the U-shaped corner of the first support member 162, and the first support substrate 110 enters a portion of the first support member 162 and the second support member 164 (third support member 165). As a result, the first support substrate 110 can be stably fixed in the housing portion 152, and therefore, the film thickness of the release layer 116 formed on the first support substrate 110 is uniformly formed in the center and outer periphery of the release layer 116, and the release layer 116 is uniformly formed in-plane.

[0071] Furthermore, in one embodiment of the present invention, the vapor deposition mask manufacturing apparatus 150 has an opening 190, with distances W and H configured at predetermined values. Therefore, the first protrusion 162A can cover the first support substrate 110 and the first resist mask 114. As a result, the vapor deposition mask manufacturing apparatus 150 can control the circulation of the solution containing the metal material filled in the plating bath within the vapor deposition mask manufacturing apparatus 150. That is, near the outermost periphery of the first support substrate 110, the circulation of the solution is suppressed, thereby reducing the ion concentration in the nearby solution as the release layer 116 grows. Correspondingly, the growth rate of the release layer 116 near the outermost periphery of the first support substrate 110 decreases, thus suppressing the film thickness from increasing beyond that of the central portion. Therefore, the vapor deposition mask manufacturing apparatus 150 can uniformly form the circulated metal material as the release layer 116 on the first support substrate 110, and uniformly form the film thickness of the release layer 116 at both the center and outer periphery of the release layer 116.

[0072] like Figure 10As shown, for example, when the distance H (height of the overhanging portion H) is 3.5 mm, the film thickness of the outermost periphery of the peeling layer 116 is 19.5 μm or more and 20.5 μm or less, when the distance H (height of the overhanging portion H) is 6 mm, the film thickness of the outermost periphery of the peeling layer 116 is 59.5 μm or more and 60.5 μm or less, when the distance H (height of the overhanging portion H) is 9 mm, the film thickness of the outermost periphery of the peeling layer 116 is 99.5 μm or more and 100.5 μm or less, and when the distance H (height of the overhanging portion H) is 10 mm, the film thickness of the outermost periphery of the peeling layer 116 is 119.5 μm or more and 120.5 μm or less. That is, when the design film thickness d2 of the peeling layer 116 is set, the distance H (height of the overhanging portion H) can be set using Figure 10 For example, in one embodiment of the present application, as described above, by setting the distance H (height of the overhanging portion H) to 10 mm, the design film thickness d2 of the peeling layer 116 can be set to 120 μm.

[0073] The evaporation mask manufacturing apparatus 150 of one embodiment of the present application has an opening portion 190, and the distance W and the distance H are formed with predetermined values based on Figure 10 , the film thickness of the peeling layer 116 can be controlled. As a result, the film thickness of the peeling layer 116 does not deviate between the central portion and the vicinity of the outermost periphery, and thus, at the stage of peeling the peeling layer 116 from the second surface 110A of the first support substrate 110, which will be described later, the peeling layer 116 can be prevented from being peeled, damaged, or the like.

[0074] Figure 11 (A) of FIG. 16A indicates a stage of providing the peeling layer 116 with an adhesive layer 124. The adhesive layer 124 preferably uses a resist film having a predetermined adhesive force or adhesive force in an unexposed state. The resist film is, for example, a dry film resist. The adhesive layer 124 preferably covers the entire surface of the inner side region 120 of the peeling layer 116, and the end portion of the adhesive layer 124 extends to the outer side of the peeling layer 116. The end portion of the adhesive layer 124 can also extend to the outer side region 122 of the peeling layer 116. The peeling layer 116 supplied as a film-like member has such a size that the inner side region of the peeling layer 116 can be reliably covered.

[0075] may be, for example, as Figure 11As shown in (B) of FIG. 12, the outer peripheral portion of the adhesive layer 124 is not exposed, and the inner side region of the adhesive layer 124 is exposed. Specifically, the outer peripheral portion 132 including the region overlapping the end portion of the release layer 116 in the adhesive layer 124 can be left unexposed, and the region inside the outer peripheral portion 132 can be exposed and subjected to a process of curing the exposed surface of the region inside the outer peripheral portion 132. At least a part of the outer side region 122 (region subjected to the exposure process) preferably overlaps the release layer 116. The selective exposure of the adhesive layer 124 can be performed using a photomask. For example, in the case where the photosensitive dry film resist used as the adhesive layer 124 is a positive type, a first photomask 126 in which a light-shielding portion 129 is formed so as to surround a light-transmitting portion 130 can be used. Through such an exposure process, a region (region inside the outer side region 122) in which the adhesive force is reduced, which is cured compared to the outer side region 122 (unexposed region), can be formed on the adhesive layer 124.

[0076] Further, as described above, the dry film resist loses the adhesive force on the surface through the exposure process, but the portion that has been in contact with another surface in the unexposed state maintains the adhesive force after being cured by light irradiation.

[0077] Figure 12 (A) of FIG. 12 shows a stage in which the adhesive layer 124 is brought into close contact with the second surface 112A of the second support substrate 112, and the release layer 116 is laminated with the first support substrate 110. At this time, most of the adhesive layer 124 has been exposed, and the surface thereof has lost the adhesive force. Therefore, the second support substrate 112 is fixed to the unexposed outer peripheral portion 132 of the adhesive layer 124. On the other hand, the interface between the adhesive layer 124 and the release layer 116 has been in close contact at the time before the exposure, and although the adhesive force is lost due to the exposure, a certain degree of close contact force is maintained. Further, the second support substrate 112 is formed of the same material as the first support substrate 110.

[0078] In addition, the interface between the unexposed outer peripheral portion 132 and the release layer 116 can be increased in close contact property by performing a baking process after the lamination. The conditions of the baking process are, for example, 60°C for 1 hour.

[0079] Figure 12 (B) of FIG. 12 shows a stage in which the release layer 116 is peeled from the second surface 110A of the first support substrate 110. The release layer 116 can be peeled from the first support substrate 110 by applying a physical force to the interface between the release layer 116 and the first support substrate 110. For example, a jig having a sharp tip is pressed against the interface between the first support substrate 110 and the release layer 116 to form a portion that becomes a trigger for the peeling, and then an external force is applied in a manner to peel the first support substrate 110, so that the release layer 116 can be peeled from the first support substrate 110.

[0080] Figure 13 (A) indicates a stage of forming a second resist mask 138 on the second support substrate 112 provided with the peeling layer 116. The second resist mask 138 is formed in a prescribed pattern. That is, the second resist mask 138 is selectively formed in regions where the plurality of openings 103 and a later-described dummy pattern 140 are to be formed. For example, a negative type photoresist is applied on the peeling layer 116, and exposure is performed using a photomask so that the regions where the plurality of openings 103 and the dummy pattern 140 are to be formed are selectively exposed. In addition, a positive type photoresist is applied on the peeling layer 116, and exposure is performed using a photomask so that the non-opening portions are selectively exposed. Then, by performing development, the second resist mask 138 patterned can be obtained. Furthermore, it is preferable that the second resist mask 138 also be formed in the outer edge portion of the peeling layer 116 so that the peeling layer 116 can be easily peeled from the evaporation mask unit 100.

[0081] Figure 13 (B) indicates a stage of forming an plated pattern in regions not covered by the second resist mask 138 using a plating method to form the evaporation mask 102. The formation of the plated pattern can be performed in one stage, or can be performed in a plurality of stages. In the case of being performed in a plurality of stages, the plating treatment can be performed in such a manner that different metals are formed in different stages. In addition, the plating treatment can be performed in such a manner that the upper surface of the plated pattern becomes lower than the upper surface of the second resist mask 138, or can be performed in such a manner that the upper surface of the plated pattern becomes higher than the upper surface of the second resist mask 138. In the latter case, the planarization of the upper surface of the plated pattern can be performed by polishing the upper surface (front surface) of the plated pattern. Subsequently, as shown in (C), the second resist mask 138 is removed by etching using a peeling liquid, and / or ashing, and the evaporation mask 102 in which the mask pattern is formed by the plurality of openings 103 can be produced on the peeling layer 116. Figure 13

[0082] Furthermore, as shown in (B) and (C), when the evaporation mask 102 is formed, the dummy pattern 140 which is isolated from the evaporation mask 102 is formed. The dummy pattern 140 is configured to surround the plurality of evaporation masks 102 in plan view. The dummy pattern 140 and the evaporation mask 102 are formed simultaneously, and thus, they can have the same composition and thickness as each other. Figure 13 Figure 13

[0083] Figure 14 ​​​(A) of FIG. 10A indicates one way of a protective film 142 for protecting the mask pattern 104 of the evaporation mask 102. The protective film 142 can use a dry film resist. The protective film 142 has, for example, a structure in which a photocurable resin film 144 is sandwiched by a peeling film 145 and a protective film 146. The photocurable resin film 144 contains a negative type photocurable resin. That is, it contains a high molecule or an oligomer that can be cured by light. The thickness of the photocurable resin film 144 can be arbitrarily selected, for example, from a range of 20 μm or more and 500 μm or less, 50 μm or more and 200 μm or less, or 50 μm or more and 120 μm or less. The protective film 146 contains a high molecule material. The high molecule material can be selected from, for example, a polyolefin, a polyimide, a polyester, a polystyrene, or a fluorine-containing polyolefin, or the like.

[0084] Figure 14 (B) of FIG. 10A indicates a state in which the protective film 142 is arranged on the evaporation mask 102. The protective film 142 is arranged so that, after the peeling film 145 is peeled, the photocurable resin film 144 is sandwiched by the evaporation mask 102 and the protective film 146. The protective film 142 is provided in a manner of covering at least all of the mask patterns 104.

[0085] Next, the photocurable resin film 144 is exposed to light. Specifically, as shown in (A) of FIG. 10B, a second photomask 128 having a light-shielding portion 129 and a light-transmitting portion 130 is arranged so that the light-transmitting portion 130 overlaps the mask pattern 104, and exposure is performed using the second photomask 128. As a result, the solubility of the exposed portion with respect to a developing solution is reduced. Figure 15

[0086] Figure 16 (A) of FIG. 10C indicates a state in which, after the photocurable resin film 144 is exposed to light, the protective film 146 is peeled and developed, and a third resist mask 148 is formed on the mask pattern 104. As shown in (A) of FIG. 10C, when a plurality of mask patterns 104 are formed on the peeling layer 116, the third resist mask 148 is provided for each mask pattern 104. In addition, since a support frame is to be formed on the dummy pattern 140 in a later process, the third resist mask 148 is not provided on the dummy pattern 140. Figure 16

[0087] Figure 16 (B) of FIG. 10C indicates a stage in which the support frame 108 is arranged on the dummy pattern 140. When a plurality of mask patterns 104 are formed, the support frame 108 is arranged between the respective mask patterns. The support frame 108 can have a form in which an outer contour pattern is wide, and a pattern formed inside the outer contour pattern (a pattern formed between the mask patterns 104) is narrow.

[0088] Figure 17 ​​(A) indicates the stage of forming the connector 106 using a plating method. In the connector 106, metallic material is deposited primarily from the portion of the surface of the vapor deposition mask 102 that is not covered by the support frame 108 and the third resist mask 148. The result is, as... Figure 17 As shown in (A), a connecting portion 106 is formed that connects to the upper surface of the vapor deposition mask 102 and the side surface of the support frame 108. By forming the connecting portion 106, the vapor deposition mask 102 and the support frame 108 can be connected and fixed.

[0089] The result of forming the connecting portion 106 can be that the thickness of the connecting portion 106 is the same as the thickness of the third photoresist mask 148, or the thickness of the connecting portion 106 is less than the thickness of the third photoresist mask 148, or it can be as follows: Figure 17 As shown in (A), the thickness of the connecting portion 106 is greater than the thickness of the third resist mask 148. When the thickness of the connecting portion 106 is greater than the thickness of the third resist mask 148, the vapor deposition mask 102 and the support frame 108 can be more firmly bonded. On the other hand, when the thickness of the connecting portion 106 is less than or equal to the thickness of the third resist mask 148, it is possible to prevent the connecting portion 106 from forming on the third resist mask 148. As a result, it is possible to prevent adverse situations such as the connecting portion 106 being damaged when the third resist mask 148 is removed, or the mask pattern 104 being damaged due to the damage of the connecting portion 106.

[0090] like Figure 17 As shown in (B), by peeling off the third resist mask 148 using a stripping solution, a vapor deposition mask unit 100 can be formed on the second support substrate 112. Then, the release layer 116 is peeled off from the second support substrate 112, and further peeled off from the vapor deposition mask 102, thereby obtaining... Figure 2 The vapor deposition mask unit 100 shown is shown.

[0091] Furthermore, the vapor deposition mask 102 forms a fine mask pattern 104, therefore, it is also required that the film thickness be uniform in the central portion and near the outermost periphery. Therefore, the vapor deposition mask manufacturing apparatus 150 described above can also form... Figure 13 During the deposition process of the vapor deposition mask 102 shown in (B) and (C), it is used to house the second support substrate 112.

[0092] In the manufacturing process of the vapor deposition mask unit 100 of this embodiment, after the release layer 116 is transferred to the second support substrate 112, the photocurable resin film 144 is exposed and developed to form the second photoresist mask 138. Figure 16 (A) Figure 16 (B) and the stage of removing the second resist mask 138 using a stripping solution. Figure 17(A) to (C) of the above-described embodiment, wet processing with a chemical liquid is performed. Figure 17

[0093] By using the above-described manufacturing method of the evaporation mask manufacturing apparatus 150 or the evaporation mask 102, it is possible to suppress the film thickness d1 of the first resist mask 114 from becoming thicker than necessary. That is, it is possible to suppress the thickening of the first resist mask 114. In addition, by using the manufacturing method of the evaporation mask manufacturing apparatus 150 or the evaporation mask 102, it is possible to suppress the thickening of the first resist mask 114, and thus it is possible to simplify the manufacturing method and suppress an increase in cost with manufacturing.

[0094] The structure of the evaporation mask, the evaporation mask manufacturing apparatus, the manufacturing method of the evaporation mask, the structure of the evaporation mask unit, and the manufacturing method of the evaporation mask unit, which are described as embodiments of the present application in the foregoing, can be appropriately combined to be implemented as long as they do not contradict each other. In addition, a technical solution obtained by appropriately adding, deleting, or designing a constituent element, or a technical solution obtained by appropriately adding, omitting, or changing a condition of a process, based on the structure of the evaporation mask, the evaporation mask manufacturing apparatus, the manufacturing method of the evaporation mask, the structure of the evaporation mask unit, and the manufacturing method of the evaporation mask unit, is also included in the scope of the present application as long as it contains the gist of the present application.

[0095] In addition, even if other effects different from the effects brought about by the technical solutions of the above-described embodiments are effects known from the description of the present specification or effects that can be easily anticipated by those skilled in the art from the description of the present specification, they can of course be understood as effects brought about by the present application.

[0096] Explanation of Reference Signs

[0097] ​100: evaporation mask unit, 102: evaporation mask, 103: opening, 104: mask pattern, 106: connecting portion, 108: support frame, 110: first support substrate, 110A: second surface, 111: outer edge portion, 112: second support substrate, 112A: second surface, 114: first resist mask, 116: peeling layer, 118: opening portion, 120: inner side region, 122: outer side region, 124: adhesive layer, 126: first photomask, 128: second photomask, 129: light shielding portion, 130: light transmitting portion, 132: outer peripheral portion, 138: second resist mask, 140: dummy pattern, 142: protective film, 144: photocurable resin film, 145: peeling film, 146: protective film, 148: third resist mask, 150: evaporation mask manufacturing apparatus, 151: support base material, 151A: first surface, 152: housing portion, 154: frame-shaped portion, 156A: first step portion, 156B: second step portion, 157A: first wall portion, 157B: second wall portion, 157C: first part, 162: first support member, 162A: first protruding portion, 162C: circle, 163: electrode portion, 164: second support member, 164C: circle, 165: third support member, 165A: second protruding portion, 166: fixing member, 166A: fixing member, 166B: fixing member, 166C: fixing member, 168: fixing member, 173: opening portion, 176A: opening portion, 176B: opening portion, 176C: opening portion, 178: opening portion, 186A: opening portion, 186B: opening portion, 186C: opening portion, 186D: opening portion, 190: opening portion, 190A: first side, 190B: second side, 190C: third side, 190D: fourth side.

Claims

1. An apparatus for manufacturing an evaporation mask, characterized by comprising: Including: a support base material having a first surface for supporting a plated member; a first support member and a second support member provided on the first surface in a manner surrounding the outer periphery of the plated member; and an electrode portion provided apart from the first surface, the first support member has a first wall portion extending in a direction intersecting the first surface, and a first protruding portion protruding inward in a direction parallel to the first surface at an upper portion of the first wall portion, the second support member has a second wall portion extending in a direction intersecting the first surface, and a second protruding portion protruding inward in a direction parallel to the first surface at an upper portion of the second wall portion, the electrode portion is sandwiched between the second wall portion and the second protruding portion, the first wall portion has a first step portion recessed outward in a direction parallel to the first surface, the second wall portion has a second step portion recessed outward in a direction parallel to the first surface with respect to the electrode portion, the first support member and the second support member are arranged in a manner capable of sandwiching the plated member between the first step portion and the second step portion and the first surface.

2. The manufacturing apparatus for a vapor deposition mask according to claim 1, wherein: a distance between the first protruding portion and the second protruding portion in a direction parallel to the first surface is smaller than a distance between the first step portion and the second step portion in a direction parallel to the first surface.

3. The manufacturing apparatus for a vapor deposition mask according to claim 2, wherein: the first protruding portion and the second protruding portion cover a portion of a second surface of the plated member, a length of the second protruding portion covering the second surface is greater than a length of the first protruding portion covering the plated member.

4. The manufacturing apparatus for a vapor deposition mask according to claim 3, wherein: a distance between the second protruding portion and the second surface in a direction intersecting the first surface is equal to a distance between the first protruding portion and the second surface in a direction intersecting the first surface when viewed in cross section.

5. The manufacturing apparatus for a vapor deposition mask according to claim 3, wherein: a distance between an end portion of the second protruding portion and an end portion of a first resist mask provided on the second surface in a direction parallel to the first surface is equal to a distance between an end portion of the first protruding portion and the end portion of the first resist mask in a direction parallel to the first surface when viewed in cross section.

6. The manufacturing apparatus for a vapor deposition mask according to claim 5, wherein: a distance between the second protruding portion and the second surface in a direction parallel to the first surface is 10 mm, and a distance between the end portion of the second protruding portion and the end portion of the first resist mask in a direction parallel to the first surface is 4 mm when viewed in cross section.

7. The manufacturing apparatus for a vapor deposition mask according to claim 5, wherein: a peeling layer is provided on a side of the first resist mask on which the first step portion is provided and on a side opposite to the side on which the first step portion is provided when viewed in cross section.

8. A method for manufacturing an evaporation mask, which is a method for manufacturing an evaporation mask using the manufacturing apparatus for an evaporation mask according to claim 6, characterized by, Including: forming the first resist mask at a first film thickness in an inner side region of the second face; and a manufacturing apparatus of the evaporation mask according to claim 6, forming a peeling layer on each of the second face on a side where the first step portion is provided and on a side opposite to the side where the first step portion is provided of the first resist mask.

9. The manufacturing method of the evaporation mask according to claim 8, wherein: the plated member is sandwiched between the first step portion and the second step portion and the first face.

10. The manufacturing method of the evaporation mask according to claim 9, wherein: the peeling layer is formed of a metal film.

11. The manufacturing method of the evaporation mask according to claim 10, wherein: the peeling layer is formed by plating.

12. The manufacturing method of the evaporation mask according to claim 8, wherein: a thickness of the peeling layer is equal to the first film thickness.

13. The manufacturing method of the evaporation mask according to claim 8, wherein: a thickness of the peeling layer is 119.5 μm or more and 120.5 μm or less.

Images