Infrared sensing device and display device

Abstract

This application discloses an infrared sensing device and a display device, belonging to the field of sensor technology. The infrared sensing device includes: an infrared emitter for emitting short-wave infrared light of a predetermined wavelength; a semiconductor structure, wherein the transparent band of the semiconductor structure includes the predetermined wavelength, and the semiconductor structure is used to allow the short-wave infrared light of the predetermined wavelength emitted by the infrared emitter to pass through; and an infrared sensing array located on one side of the semiconductor structure for sensing the short-wave infrared light of the predetermined wavelength passing through the semiconductor structure. This application can isolate environmental noise, improve the signal-to-noise ratio, and reduce costs.

Description

Technical Field

[0001] This application belongs to the field of sensor technology, and in particular relates to an infrared sensing device and a display device. Background Technology

[0002] To reduce the impact of ambient light noise, existing sensor manufacturers use methods such as coating infrared ink or adding filters to infrared sensing devices to filter out ambient light, allowing the infrared light emitted by the infrared emitter to pass through and reach the infrared sensing array. However, infrared ink and filters require coating manufacturers to design them specifically based on the infrared light band emitted by the infrared emitter, increasing the cost of infrared sensing devices. Summary of the Invention

[0003] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes an infrared sensing device and a display device that can isolate environmental noise, improve the signal-to-noise ratio, and reduce costs.

[0004] In a first aspect, this application provides an infrared sensing device, comprising:

[0005] An infrared emitter, used to emit short-wave infrared light in a predetermined band;

[0006] A semiconductor structure, wherein the transparent band of the semiconductor structure includes the predetermined band, and the semiconductor structure is used to allow short-wave infrared light of the predetermined band emitted by the infrared emitter to pass through;

[0007] An infrared sensing array, located on one side of the semiconductor structure, is used to sense short-wave infrared light passing through the predetermined band of the semiconductor structure.

[0008] The infrared sensing device according to this application can utilize the light transmission characteristics of a semiconductor structure to enable an infrared emitter to emit short-wave infrared light of a predetermined band. The transparent band of the semiconductor structure includes the predetermined band, isolating ambient light noise of other bands, improving the signal-to-noise ratio, and reducing costs.

[0009] According to one embodiment of this application, the infrared sensing device further includes a bonding substrate;

[0010] The infrared emitter and the infrared sensing array are located on the same side of the bonding substrate, and the semiconductor structure is located on the side of the infrared sensing array opposite to the bonding substrate.

[0011] According to one embodiment of this application, the infrared sensing device further includes an infrared sensor;

[0012] The infrared emitter and the infrared sensor are located on the same side of the bonding substrate; the infrared sensor includes the infrared sensing array and the semiconductor structure.

[0013] According to one embodiment of this application, the infrared sensor further includes a substrate;

[0014] The substrate is located on the side of the infrared sensing array opposite to the bonding substrate, and the semiconductor structure includes the substrate.

[0015] According to one embodiment of this application, the infrared sensor further includes a readout circuit layer;

[0016] The readout circuit layer is located between the substrate and the infrared sensing array, and the semiconductor structure further includes the readout circuit layer.

[0017] According to one embodiment of this application, the infrared sensor further includes a wiring layer;

[0018] The wiring layer is located between the substrate and the readout circuit layer, and the semiconductor structure further includes the wiring layer.

[0019] According to one embodiment of this application, the infrared sensing device further includes an encapsulation layer and a first light-transmitting layer;

[0020] The encapsulation layer is located on the bonding substrate and covers the infrared sensor; the first light-transmitting layer is located on the side of the infrared sensor away from the bonding substrate, the first light-transmitting layer penetrates the encapsulation layer and corresponds to the position of the infrared sensing array.

[0021] According to one embodiment of this application, the orthographic projection of the first light-transmitting layer onto the infrared sensor covers the infrared sensing array.

[0022] According to one embodiment of this application, the infrared sensing device further includes an infrared sensor;

[0023] The infrared emitter and the infrared sensor are located on the same side of the bonding substrate; the infrared sensor includes the infrared sensing array, and the semiconductor structure is located on the side of the infrared sensor opposite to the bonding substrate.

[0024] According to one embodiment of this application, the infrared sensor further includes a substrate, a wiring layer, and a readout circuit layer;

[0025] The substrate is located between the bonding substrate and the infrared sensing array, the wiring layer is located between the substrate and the infrared sensing array, and the readout circuit layer is located between the wiring layer and the infrared sensing array.

[0026] According to one embodiment of this application, the infrared sensing device further includes an encapsulation layer;

[0027] The encapsulation layer is located on the bonding substrate and covers the infrared sensor; the semiconductor structure penetrates the encapsulation layer and corresponds to the position of the infrared sensing array.

[0028] According to one embodiment of this application, the orthographic projection of the semiconductor structure onto the infrared sensor covers the infrared sensing array.

[0029] According to one embodiment of this application, the infrared sensing device further includes a second light-transmitting layer;

[0030] The encapsulation layer also covers the infrared emitter, and the second light-transmitting layer is located on the side of the infrared emitter away from the bonding substrate. The second light-transmitting layer penetrates the encapsulation layer and corresponds to the position of the infrared emitter.

[0031] According to one embodiment of this application, the semiconductor structure is made of silicon, and the predetermined wavelength range is 1.2 μm to 1.4 μm.

[0032] Secondly, this application provides a display device, which includes a display panel and the aforementioned infrared sensing device;

[0033] The infrared sensor is located on one side of the display panel.

[0034] According to the display device of this application, the light transmission characteristics of the semiconductor structure can be used to enable the infrared emitter to emit short-wave infrared light of a predetermined band. The transparent band of the semiconductor structure includes the predetermined band, which isolates ambient light noise of other bands, improves the signal-to-noise ratio, and reduces costs.

[0035] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0036] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0037] Figure 1 This is one of the structural schematic diagrams of the infrared sensing device provided in the embodiments of this application;

[0038] Figure 2 This is one of the scenario diagrams of the infrared sensing device provided in the embodiments of this application;

[0039] Figure 3 This is a second schematic diagram of the structure of the infrared sensing device provided in the embodiments of this application;

[0040] Figure 4This is a second scenario diagram of the infrared sensing device provided in the embodiments of this application;

[0041] Figure 5 This is a schematic diagram of the structure of the display device provided in the embodiments of this application. Detailed Implementation

[0042] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0043] The following is for reference. Figures 1-5 This application describes the infrared sensing device and display device provided in the embodiments of this application.

[0044] Figure 1 and Figure 3 This is a schematic diagram of an infrared sensing device provided in an embodiment of this application. The infrared sensing device can be a proximity sensing device, which can be applied to ranging environments such as near-ear detection of mobile terminals, in-ear detection of earphones, or proximity detection of robotic vacuum cleaners.

[0045] like Figure 1 and Figure 3 As shown, the infrared sensing device provided in this application embodiment includes an infrared emitter 1, a semiconductor structure 2, and an infrared sensing array 3.

[0046] Infrared emitter 1 is used to emit short-wave infrared light of a predetermined wavelength. The predetermined wavelength is set based on the light transmission characteristics of semiconductor structure 2. Infrared emitter 1 may include an infrared LED (Light-Emitting Diode) (not shown in the figure), which is used to emit short-wave infrared light of the predetermined wavelength.

[0047] The transparent band of semiconductor structure 2 includes a predetermined band, which allows short-wave infrared light of the predetermined band emitted by infrared emitter 1 to pass through. A transparent band means that semiconductor structure 2 is transparent to this band, i.e., semiconductor structure 2 does not absorb light of this band. The predetermined band is set based on the transparent band of semiconductor structure 2, and the predetermined band is located within the transparent band of semiconductor structure 2; that is, the transparent band of semiconductor structure 2 includes the predetermined band, allowing short-wave infrared light of the predetermined band emitted by infrared emitter 1 to pass through semiconductor structure 2, while ambient light cannot pass through semiconductor structure 2.

[0048] An infrared sensing array 3 is located on one side of the semiconductor structure 2. The infrared sensing array 3 is used to sense short-wave infrared light of a predetermined band passing through the semiconductor structure 2. The short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the semiconductor structure 2 and reaches the infrared sensing array 3. The infrared sensing array 3 senses the short-wave infrared light of the predetermined band and excites photoelectrons to generate distance based on the intensity change of the short-wave infrared light.

[0049] It should be noted that the different materials of semiconductor structure 2 and the different transparent bands of semiconductor structure 2 result in different predetermined bands of short-wave infrared light emitted by infrared emitter 1, and different predetermined bands of short-wave infrared light sensed by infrared sensing array 3.

[0050] This embodiment utilizes the light-transmitting properties of the semiconductor structure 2 to enable the infrared emitter 1 to emit short-wave infrared light of a predetermined wavelength. The transparent wavelength of the semiconductor structure 2 includes this predetermined wavelength, ensuring that the short-wave infrared light of the predetermined wavelength emitted by the infrared emitter 1 passes through the semiconductor structure 2 and reaches the infrared sensing array 3. This isolates ambient light noise of other wavelengths without affecting the sufficient stability of the short-wave infrared light signal, thereby improving the signal-to-noise ratio and reducing dark current. Furthermore, by adjusting the wavelength emitted by the infrared emitter and the wavelength sensed by the infrared sensing array 3 according to the transparent wavelength of the semiconductor structure 2, there is no need to design infrared inks and filters specifically, reducing the cost of the infrared sensing device.

[0051] In some embodiments, the material of the semiconductor structure 2 includes silicon, with a predetermined wavelength range of 1.2 μm to 1.4 μm.

[0052] Visible light has a wavelength range of 380nm to 780nm, categorized from longest to shortest as red, orange, yellow, green, cyan, blue, and violet. Infrared light has wavelengths longer than red light, ranging from 780nm to 1mm, and its spectrum lies beyond that of red light. Within infrared light, the spectral range with higher transmittance when sunlight passes through the atmosphere is often called the "atmospheric window." The 1μm to 14μm band includes three "atmospheric windows," defined as: shortwave (SWIR): 1μm to 2.5μm, midwave (MWIR): 2.5μm to 5μm, and longwave (LWIR): 8μm to 4μm. Minerals, man-made materials, and some other geological features possess unique compositions that can be "seen" by shortwave infrared, but are invisible to the naked eye and by visible and near-infrared light.

[0053] Silicon has a bandgap of 1.12 eV, corresponding to a wavelength of 1.1 μm. Therefore, silicon is transparent in the 1.1 μm to 6 μm wavelength range, with typical wavelengths of 1.31 μm and 1.55 μm, and theoretically does not absorb infrared light. This transparent band lies within the short-wave infrared band, and pure silicon has a transmittance of 90% to 95% at a wavelength of 1.3 μm. The predetermined band can be set from 1.2 μm to 1.4 μm.

[0054] Infrared sensing devices in related technologies typically operate in the 0.78μm to 0.94μm wavelength range, requiring additional infrared ink or filters to filter infrared light in this range, resulting in high costs. This embodiment, however, utilizes silicon as the material of semiconductor structure 2, defining a predetermined wavelength range of 1.2μm to 1.4μm. The infrared emitter 1 emits short-wave infrared light within this predetermined wavelength range, and the infrared sensing array 3 senses this short-wave infrared light. This eliminates the need for additional infrared ink or filters, effectively isolating ambient light noise and reducing costs.

[0055] It should be noted that the semiconductor structure 2 can also be made of other materials, and the predetermined wavelength can also be other wavelengths, as long as it can ensure that the semiconductor structure 2 can pass through the light of the predetermined wavelength while blocking the light of other wavelengths.

[0056] In some embodiments, such as Figure 1 and Figure 3 As shown, the infrared sensing device also includes a bonding substrate 4. The infrared emitter 1 and the infrared sensing array 3 are located on the same side of the bonding substrate 4, and the semiconductor structure 2 is located on the side of the infrared sensing array 3 opposite to the bonding substrate 4. The bonding substrate 4 can be a PCB (Printed Circuit Board) substrate.

[0057] For example, both the infrared emitter 1 and the infrared sensing array 3 are located above the bonding substrate 4, and the semiconductor structure 2 is located above the infrared sensing array 3. Figure 2 and Figure 4 As shown, the infrared sensing array 3 emits short-wave infrared light of a predetermined band upwards. When an object 10 approaches the top of the infrared sensing array 3, part of the short-wave infrared light emitted by the infrared emitter 1 is reflected by the object 10. The reflected short-wave infrared light passes through the semiconductor structure 2 and reaches the infrared sensing array 3. The infrared sensing array 3 senses the short-wave infrared light that has passed through the semiconductor structure 2, thereby realizing distance detection.

[0058] In some embodiments, such as Figure 1 As shown, the infrared sensing device also includes an infrared sensor 30. The infrared emitter 1 and the infrared sensor 30 are located on the same side of the bonding substrate 4, and the infrared sensor 30 includes an infrared sensing array 3 and a semiconductor structure 2.

[0059] Both the infrared sensor 30 and the infrared emitter 1 are bonded to the bonding substrate 4, and the infrared sensor 30 and the infrared emitter 1 are bonded to the same side of the bonding substrate 4. The infrared sensing array 3 and the semiconductor structure 2 are devices in the infrared sensor 30, and the infrared sensing array 3 is located between the bonding substrate 4 and the semiconductor structure 2.

[0060] In this embodiment, some components of the infrared sensor 30 are used as semiconductor structure 2, so that the short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the semiconductor structure 2 to reach the infrared sensing array 3. The semiconductor structure 2 isolates ambient light noise, thereby improving the signal-to-noise ratio while ensuring sufficient and stable short-wave infrared light signal. Moreover, no additional components need to be set outside the infrared sensor 30, further reducing costs.

[0061] In some embodiments, such as Figure 1 As shown, the infrared sensor 30 also includes a substrate 31. The substrate 31 is located on the side of the infrared sensing array 3 opposite to the bonding substrate 4, and the semiconductor structure 2 includes the substrate 31. The substrate 31 is made of a semiconductor material, such as silicon.

[0062] In this embodiment, the substrate 31 in the infrared sensor 30 is used as the semiconductor structure 2, and the substrate 31 is located on the side of the infrared sensing array 3 away from the bonding substrate 4, so that the short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the substrate 31 to reach the infrared sensing array 3. The substrate 31 isolates ambient light noise, thereby improving the signal-to-noise ratio while ensuring sufficient and stable short-wave infrared light signal. Moreover, no additional devices need to be set outside the infrared sensor 30, further reducing costs.

[0063] In some embodiments, such as Figure 1 As shown, the infrared sensor 30 also includes a readout circuit layer 32. The readout circuit layer 32 is located between the substrate 31 and the infrared sensing array 3, and the semiconductor structure 2 also includes a readout circuit layer 32. The readout circuit layer 32 is made of a semiconductor material, and the material of the readout circuit layer 32 is the same as that of the substrate 31, such as silicon. The readout circuit layer 32 is electrically connected to the infrared sensing array 3, which converts the sensed short-wave infrared light into an electrical signal, and the readout circuit layer 32 reads out the electrical signal converted by the infrared sensing array 3.

[0064] In this embodiment, the substrate 31 and readout circuit layer 32 in the infrared sensor 30 are used as semiconductor structure 2. The substrate 31 and readout circuit layer 32 are both located on the side of the infrared sensing array 3 away from the bonding substrate 4, so that the short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the substrate 31 and readout circuit layer 32 to reach the infrared sensing array 3. The substrate 31 and readout circuit layer 32 isolate ambient light noise. Under the premise of ensuring sufficient and stable short-wave infrared light signal, the signal-to-noise ratio is improved. Moreover, no additional devices need to be set outside the infrared sensor 30, further reducing costs.

[0065] In some embodiments, such as Figure 1 As shown, the infrared sensor 30 also includes a wiring layer 33. The wiring layer 33 is located between the substrate 31 and the readout circuit layer 32, and the semiconductor structure 2 also includes a wiring layer 33. The wiring layer 33 is made of a semiconductor material, and the material of the wiring layer 33 is the same as that of the substrate 31 and the readout circuit layer 32, such as silicon. Various traces are provided in the wiring layer 33, through which electrical connections between various devices in the infrared sensing device can be achieved.

[0066] In this embodiment, the substrate 31, readout circuit layer 32, and wiring layer 33 in the infrared sensor 30 are used as semiconductor structure 2. The substrate 31, readout circuit layer 32, and wiring layer 33 are all located on the side of the infrared sensing array 3 away from the bonding substrate 4, so that the short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the substrate 31, readout circuit layer 32, and wiring layer 33 to reach the infrared sensing array 3. The substrate 31, readout circuit layer 32, and wiring layer 33 isolate ambient light noise. Under the premise of ensuring sufficient and stable short-wave infrared light signal, the signal-to-noise ratio is improved. Moreover, no additional devices need to be set outside the infrared sensor 30, further reducing costs.

[0067] In some embodiments, such as Figure 1 As shown, the infrared sensing device also includes an encapsulation layer 5 and a first light-transmitting layer 6. The encapsulation layer 5 is located on the bonding substrate 4 and covers the infrared sensor 30. The first light-transmitting layer 6 is located on the side of the infrared sensor 30 facing away from the bonding substrate 4, penetrates through the encapsulation layer 5, and corresponds to the position of the infrared sensing array 3. The encapsulation layer 5 can be a resin-type encapsulation cover, etc., and the first light-transmitting layer 6 can be a light-transmitting film, etc.

[0068] The encapsulation layer 5 is used to encapsulate the infrared sensor 30 on the bonding substrate 4. Since the encapsulation layer 5 covers the infrared sensor 30, a first light-transmitting layer 6 is also required. The first light-transmitting layer 6 is located on the side of the infrared sensor 30 away from the bonding substrate 4, and the first light-transmitting layer 6 penetrates the encapsulation layer 5. The position of the first light-transmitting layer 6 corresponds to the position of the infrared sensing array 3, thereby ensuring that short-wave infrared light can pass through the first light-transmitting layer 6 to reach the infrared sensor 30.

[0069] In some embodiments, the orthographic projection of the first light-transmitting layer 6 onto the infrared sensor 30 covers the infrared sensing array 3. For example, the orthographic projection of the first light-transmitting layer 6 onto the infrared sensor 30 exactly covers the infrared sensing array 3 to ensure that sufficient and stable short-wave infrared light reaches the infrared sensor 30.

[0070] In some embodiments, the infrared sensing device further includes a second light-transmitting layer 7. The encapsulation layer 5 also covers the infrared emitter 1, and the second light-transmitting layer 7 penetrates the encapsulation layer 5 and corresponds to the position of the infrared emitter 1. The second light-transmitting layer 7 may be a light-transmitting film or the like.

[0071] The encapsulation layer 5 is also used to encapsulate the infrared emitter 1 on the bonding substrate 4. Since the encapsulation layer 5 covers the infrared emitter 1, a second light-transmitting layer 7 is also required. The second light-transmitting layer 7 is located on the side of the infrared emitter 1 away from the bonding substrate 4, and the second light-transmitting layer 7 penetrates the encapsulation layer 5. The position of the second light-transmitting layer 7 corresponds to the position of the infrared emitter 1, thereby ensuring that the short-wave infrared light emitted by the infrared emitter 1 can reach outside the encapsulation layer 5.

[0072] In some embodiments, the infrared emitter 1 may further include a lens (not shown) located on the infrared LED for focusing short-wave infrared light of a predetermined wavelength emitted by the infrared LED. The orthographic projection of the second light-transmitting layer 7 on the bonding substrate 4 covers the orthographic projection of the lens on the bonding substrate 4. For example, the orthographic projection of the second light-transmitting layer 7 on the bonding substrate 4 and the orthographic projection of the lens on the bonding substrate 4 completely overlap to ensure that all short-wave infrared light emitted by the infrared emitter 1 can reach outside the encapsulation layer 5.

[0073] like Figure 2 As shown, the infrared sensor array 3 emits short-wave infrared light of a predetermined wavelength upwards. This short-wave infrared light passes through the second transparent layer 7 and reaches the outside of the encapsulation layer 5. When an object 10 approaches above the infrared sensor 30, part of the short-wave infrared light emitted by the infrared emitter 1 is reflected by the object 10. The reflected short-wave infrared light passes through the first transparent layer 6 and reaches the infrared sensor 30. The short-wave infrared light reaching the infrared sensor 30 passes through the semiconductor structure 2 and reaches the infrared sensor array 3. The infrared sensor array 3 senses the short-wave infrared light that has passed through the semiconductor structure 2, thereby achieving distance detection.

[0074] In some embodiments, such as Figure 3 As shown, the infrared sensing device also includes an infrared sensor 30. The infrared emitter 1 and the infrared sensor 30 are located on the same side of the bonding substrate 4. The infrared sensor 30 includes an infrared sensing array 3, and a semiconductor structure 2 is located on the side of the infrared sensor 30 opposite to the bonding substrate 4.

[0075] Both the infrared sensor 30 and the infrared emitter 1 are bonded to the bonding substrate 4, and the infrared sensor 30 and the infrared emitter 1 are bonded to the same side of the bonding substrate 4. The infrared sensing array 3 is a device in the infrared sensor 30, and the semiconductor structure 2 is disposed outside the infrared sensor 30, with the infrared sensor 30 located between the bonding substrate 4 and the semiconductor structure 2.

[0076] In this embodiment, the semiconductor structure 2 is located outside the infrared sensor 30, so that the short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the semiconductor structure 2 to reach the infrared sensing array 3. The semiconductor structure 2 isolates ambient light noise, thereby improving the signal-to-noise ratio and reducing costs while ensuring sufficient and stable short-wave infrared light signal.

[0077] In some embodiments, such as Figure 3 As shown, the infrared sensor 30 also includes a substrate 31, a wiring layer 33, and a readout circuit layer 32. The substrate 31 is located between the bonding substrate 4 and the infrared sensing array 3, the wiring layer 33 is located between the substrate 31 and the infrared sensing array 3, and the readout circuit layer 32 is located between the wiring layer 33 and the infrared sensing array 3. The materials of the substrate 31, the readout circuit layer 32, and the wiring layer 33 can be the same or different, and no specific limitation is made here.

[0078] In this embodiment, the substrate 31, the readout circuit layer 32, and the wiring layer 33 are located between the infrared sensing array 3 and the bonding substrate 4, so that the short-wave infrared light of the predetermined band emitted by the infrared emitter 1 passes through the semiconductor structure 2 and reaches the infrared sensing array 3, without passing through the substrate 31, the readout circuit layer 32, and the wiring layer 33. This improves the signal-to-noise ratio and reduces costs while ensuring sufficient and stable short-wave infrared light signals.

[0079] In some embodiments, such as Figure 3 As shown, the infrared sensing device also includes an encapsulation layer 5. The encapsulation layer 5 is located on the bonding substrate 4 and covers the infrared sensor 30. The semiconductor structure 2 penetrates the encapsulation layer 5 and corresponds to the position of the infrared sensing array 3.

[0080] The encapsulation layer 5 is used to encapsulate the infrared sensor 30 on the bonding substrate 4. Since the encapsulation layer 5 covers the infrared sensor 30, the semiconductor structure 2 penetrates through the encapsulation layer 5, and the position of the semiconductor structure 2 corresponds to the position of the infrared sensing array 3, thereby ensuring that short-wave infrared light can pass through the semiconductor structure 2 to reach the infrared sensing array 3.

[0081] In some embodiments, the semiconductor structure 2 can be a lens that penetrates the encapsulation layer 5, so as to concentrate the short-wave infrared light while ensuring that the short-wave infrared light passes through, thereby increasing the amount of short-wave infrared light transmitted.

[0082] In some embodiments, the orthographic projection of the semiconductor structure 2 onto the infrared sensor 30 covers the infrared sensing array 3. For example, the orthographic projection of the semiconductor structure 2 onto the infrared sensor 30 exactly covers the infrared sensing array 3 to ensure that sufficient and stable short-wave infrared light reaches the infrared sensor 30.

[0083] In some embodiments, the infrared sensing device further includes a second light-transmitting layer 7. The encapsulation layer 5 also covers the infrared emitter 1, and the second light-transmitting layer 7 penetrates the encapsulation layer 5 and corresponds to the position of the infrared emitter 1. The second light-transmitting layer 7 may be a light-transmitting film or the like.

[0084] like Figure 4 As shown, the infrared sensor array 3 emits short-wave infrared light of a predetermined band upwards. This short-wave infrared light passes through the second light-transmitting layer 7 and reaches the outside of the encapsulation layer 5. When an object 10 approaches above the infrared sensor 30, part of the short-wave infrared light emitted by the infrared emitter 1 is reflected by the object 10. The reflected short-wave infrared light passes through the semiconductor structure 2 and reaches the infrared sensor array 3. The infrared sensor array 3 senses the short-wave infrared light that has passed through the semiconductor structure 2, thereby achieving distance detection.

[0085] In some embodiments, such as Figure 1 and Figure 3 As shown, the infrared sensor 30 may further include a first electrode 34 and a second electrode 35. The first electrode 34 and the second electrode 35 are disposed opposite to each other, the infrared sensing array 3 is located between the first electrode 34 and the second electrode 35, and the second electrode 35 is located between the infrared sensing array 3 and the readout circuit layer 32. The first electrode 34 is used for input voltage, and the infrared sensing array 3 is electrically connected to the readout circuit layer 32 through the second electrode 35.

[0086] In some embodiments, such as Figure 1 and Figure 3 As shown, the infrared sensor 30 may further include an analog-to-digital converter module 36, a digital processing module 37, and a power control module 38. The analog-to-digital converter module 36, the digital processing module 37, the power control module 38, and the readout circuit layer 32 are all located on the wiring layer 33, with the analog-to-digital converter module 36 located between the digital processing module 37 and the readout circuit layer 32, and the power control module 38 located on the side of the readout circuit layer 32 away from the analog-to-digital converter module 36.

[0087] The analog-to-digital converter (ADC) module 36 is electrically connected to the readout circuit layer 32 via traces in the wiring layer 33, and is used to convert the analog signals read from the readout circuit layer 32 into digital signals. The digital processing module 37 is electrically connected to the ADC module 36 via traces in the wiring layer 33, and is used to process the digital signals converted by the ADC module 36 and output the processed signals. The power control module 38 is electrically connected to the readout circuit layer 32, the ADC module 36, the digital processing module 37, and the infrared transmitter 1 via traces in the wiring layer 33, and is used to supply power to the readout circuit layer 32, the ADC module 36, the digital processing module 37, and the infrared transmitter 1.

[0088] The infrared sensing device provided in the embodiments of this application utilizes the light transmission characteristics of a semiconductor structure to enable an infrared emitter to emit short-wave infrared light of a predetermined band. The transparent band of the semiconductor structure includes the predetermined band, which isolates ambient light noise of other bands, improves the signal-to-noise ratio, and reduces costs.

[0089] Accordingly, this application also provides a display device, including an infrared sensing device 100 and a display panel 200. The infrared sensing device 100 is the same as the infrared sensing device in the above embodiments, and will not be described in detail here. The infrared sensing device 100 is located on one side of the display panel 200, for example, the infrared sensing device 100 may be located on the back of the display panel 200.

[0090] The display device provided in the embodiments of this application utilizes the light transmission characteristics of a semiconductor structure to enable an infrared emitter to emit short-wave infrared light of a predetermined band. The transparent band of the semiconductor structure includes the predetermined band, which isolates ambient light noise of other bands, improves the signal-to-noise ratio, and reduces costs.

[0091] In some embodiments, the display device may further include a terminal module (not shown in the figure), and the infrared sensing device 100 and the display panel 200 are electrically connected to the terminal module, respectively.

[0092] The display device provided in this application embodiment can be applied to any product or component with display function, such as mobile phones, tablets, televisions, monitors, laptops, digital photo frames, and navigators.

[0093] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and are not limited in number; for example, a first object can be one or more.

[0094] In the description of this application, "multiple" means two or more.

[0095] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0096] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. An infrared sensing device, characterized by include: An infrared emitter, used to emit short-wave infrared light in a predetermined band; A semiconductor structure, wherein the transparent band of the semiconductor structure includes the predetermined band, and the semiconductor structure is used to allow short-wave infrared light of the predetermined band emitted by the infrared emitter to pass through; An infrared sensing array, located on one side of the semiconductor structure, is used to sense short-wave infrared light passing through the predetermined band of the semiconductor structure. The infrared sensing device further includes an infrared sensor, which includes the infrared sensing array, a substrate, a wiring layer, and a readout circuit layer. The semiconductor structure includes the substrate, the wiring layer, and the readout circuit layer. The infrared sensing device further includes a bonding substrate; the infrared emitter and the infrared sensing array are located on the same side of the bonding substrate, and the semiconductor structure is located on the side of the infrared sensing array opposite to the bonding substrate; The substrate is located on the side of the infrared sensing array opposite to the bonding substrate; the readout circuit layer is located between the substrate and the infrared sensing array; The wiring layer is located between the substrate and the readout circuit layer; the substrate, the wiring layer and the readout circuit layer are all semiconductor materials.

2. The infrared sensing device according to claim 1, characterized in that, The infrared emitter and the infrared sensor are located on the same side of the bonding substrate; the infrared sensor includes the infrared sensing array and the semiconductor structure.

3. The infrared sensing device of claim 2, wherein, The infrared sensing device further includes an encapsulation layer and a first light-transmitting layer; The encapsulation layer is located on the bonding substrate and covers the infrared sensor; the first light-transmitting layer is located on the side of the infrared sensor away from the bonding substrate, the first light-transmitting layer penetrates the encapsulation layer and corresponds to the position of the infrared sensing array.

4. The infrared sensing device of claim 3, wherein, The orthogonal projection of the first light-transmitting layer onto the infrared sensor covers the infrared sensing array.

5. The infrared sensing device according to claim 1, characterized in that, The infrared emitter and the infrared sensor are located on the same side of the bonding substrate; the infrared sensor includes the infrared sensing array, and the semiconductor structure is located on the side of the infrared sensor opposite to the bonding substrate.

6. The infrared sensing device according to claim 5, characterized in that, The substrate is located between the bonding substrate and the infrared sensing array, the wiring layer is located between the substrate and the infrared sensing array, and the readout circuit layer is located between the wiring layer and the infrared sensing array.

7. The infrared sensing device of claim 5, wherein, The infrared sensing device also includes an encapsulation layer; The encapsulation layer is located on the bonding substrate and covers the infrared sensor; the semiconductor structure penetrates the encapsulation layer and corresponds to the position of the infrared sensing array.

8. The infrared sensing device of claim 7, wherein, The orthographic projection of the semiconductor structure onto the infrared sensor covers the infrared sensing array.

9. The infrared sensing device of claim 3 or 7, wherein, The infrared sensing device also includes a second light-transmitting layer; The encapsulation layer also covers the infrared emitter, and the second light-transmitting layer is located on the side of the infrared emitter away from the bonding substrate. The second light-transmitting layer penetrates the encapsulation layer and corresponds to the position of the infrared emitter.

10. The infrared sensing device of claim 1, wherein, The semiconductor structure is made of silicon, and the predetermined wavelength range is 1.2 μm to 1.4 μm.

11. A display device, characterized by comprising: Includes a display panel and an infrared sensing device as described in any one of claims 1 to 10; The infrared sensor is located on one side of the display panel.

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