A thin film hydrogen sensor based on inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide and a method for preparing the same

Abstract

The application discloses a kind of thin film hydrogen sensor based on inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide and preparation method thereof, belong to hydrogen sensor field, the present application combines traditional semiconductor metal oxide with mesoporous inorganic-organic hybrid layer, on insulating inorganic or polymer substrate using molecular layer / atomic layer deposition technology, by introducing a porous hydroquinone zinc film (Zn-HQ), then depositing semiconductor metal oxide (MO) film, prepared MO / Zn-HQ composite film type hydrogen sensor, in the case where there is no noble metal modification, obtained sensitivity high, response fast, good selectivity, low-temperature workable semiconductor oxide film type hydrogen sensor.The hydrogen sensor structure is simple, hydrogen-sensitive performance is excellent, and the preparation process is compatible with microelectronic process, and it is convenient to be applied to integrated, miniaturized and intelligent microelectromechanical system and multifunctional sensor.

Description

Technical Field

[0001] This invention belongs to the field of hydrogen sensors, specifically relating to a thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide and its preparation method. Background Technology

[0002] Hydrogen, as a sustainable, renewable, green, and pollution-free clean energy source with high calorific value, has become one of the most competitive alternatives to traditional fossil fuels and has been widely used in fields such as road transportation, industrial synthesis, and aerospace. However, hydrogen is a colorless, odorless, and extremely lightweight flammable gas, and it is highly explosive when its volume fraction in the atmosphere reaches 4-75%. Therefore, it is necessary to develop stable and reliable hydrogen sensors to detect potential leaks during hydrogen production, storage, and use.

[0003] Semiconductor metal oxide hydrogen sensors have advantages such as simple structure, low cost, long lifespan, and stable and reliable performance, making them suitable for mass production and one of the mainstream hydrogen sensors currently available. Among them, SnO2 is the most common hydrogen sensor using this material, offering high sensitivity and rapid response. However, semiconductor metal oxide hydrogen sensors typically require high operating temperatures (~300℃), have poor selectivity, and are sensitive to various reducing gases. Therefore, surface modification with precious metals as catalysts is necessary to lower the operating temperature and improve selectivity, but this undoubtedly increases manufacturing costs significantly.

[0004] Atomic layer deposition (ALD) and its sub-type molecular layer deposition (MLD) have flourished as novel material preparation technologies over the past two decades. ALD / MLD involves alternating pulses of a gaseous precursor into a reaction chamber, causing a chemisorption reaction on the substrate surface to form a thin film. It is a special type of chemical vapor deposition, characterized by self-limitation and self-saturation, allowing for precise control of film thickness and composition at the atomic scale. Because films prepared using ALD / MLD technology exhibit excellent three-dimensional adhesion and large-area uniformity, they are highly suitable for compatibility with microelectromechanical systems (MEMS) to fabricate ultrathin, composite, and integrated multifunctional sensors. Summary of the Invention

[0005] This invention provides a thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide and its fabrication method. A traditional semiconductor metal oxide is combined with a mesoporous inorganic-organic hybrid layer. A porous zinc hydroquinone (Zn-HQ) thin film is introduced onto an insulating inorganic or polymer substrate using molecular layer / atomic layer deposition technology, followed by the deposition of a semiconductor metal oxide (MO) thin film. This process fabricates a MO / Zn-HQ composite thin-film hydrogen sensor, achieving high sensitivity, fast response, good selectivity, and low-temperature operation without noble metal modification.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide comprises, from bottom to top: an insulating substrate, an inorganic-organic hybrid nanoporous zinc hydroquinone film (Zn-HQ layer), a semiconductor metal oxide film layer, and a conductive electrode layer; the basic structural unit of the porous Zn-HQ film is (ZnO)2 (Zn-O-C6H4-O); the surface of the metal oxide film has a large number of shallow nanopores formed by the permeation of the porous Zn-HQ layer during the growth of the metal oxide film, forming a heterojunction structure beneficial to hydrogen sensing performance; wherein the thickness of the Zn-HQ layer is approximately 10-50 nm and the thickness of the metal oxide layer is approximately 10-50 nm.

[0008] A method for fabricating a thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide includes the following steps:

[0009] (1) The insulating substrate was ultrasonically cleaned in sequence with acetone, isopropanol, anhydrous ethanol and deionized water for 5 minutes, and then dried with high-purity nitrogen (99.999%) for later use.

[0010] (2) On the treated insulating substrate, a porous Zn-HQ thin film with a thickness of 10-50 nm is grown using MLD technology;

[0011] (3) On the Zn-HQ / insulating substrate grown in step (2), a semiconductor metal oxide thin film with a thickness of 10-50 nm is deposited by ALD technology;

[0012] (4) Using a mask, deposit a metal interdigitated electrode with a thickness of 100-200 nm on the MO / Zn-HQ / insulating substrate prepared in step (3) as a conductive electrode. After wire bonding and packaging, the MO / Zn-HQ composite thin film hydrogen sensor can be obtained.

[0013] In the steps described above, the reaction parameters for the porous hydroquinone zinc MLD technology in step (2) are set as follows: the source temperature of the metal precursor diethyl zinc is room temperature, the source temperature of the hydroquinone organic precursor is 150 ℃, the carrier gas and cleaning gas are 99.999% high-purity nitrogen, the deposition temperature is 170 ℃-300 ℃, the pulse cycle used for deposition is: 0.1-2 s metal precursor pulse, 2-15 s cleaning pulse, 5-25 s organic precursor pulse, 2-20 s cleaning pulse, and the number of deposition cycles is 35-200.

[0014] In step (3), the reaction parameters for the semiconductor metal oxide ALD technology are set as follows: the source temperature of the metal precursor is room temperature to 200°C, the oxygen source precursor is deionized water at room temperature or ozone, the carrier gas and cleaning gas are 99.999% high-purity nitrogen, the deposition temperature is 50°C to 450°C, and the pulse cycle used for deposition is: 0.1-2 s metal precursor pulse, 2-15 s cleaning pulse, 0.1-5 s oxygen source pulse, 2-20 s cleaning pulse, and the number of deposition cycles is 100-2000; the semiconductor metal oxide includes, but is not limited to, tin oxide, zinc oxide, titanium oxide, iron oxide, and molybdenum oxide;

[0015] Beneficial Effects: This invention provides a thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide and its fabrication method. An inorganic-organic hybrid nanoporous membrane Zn-HQ is deposited by MLD on an insulating inorganic or polymer substrate, and a semiconductor metal oxide thin film is deposited on top using ALD technology as the gas-sensitive material layer. The surface of the metal oxide thin film exhibits numerous shallow nanopores formed during the growth of the metal oxide film, permeating into the porous Zn-HQ layer. This forms a heterojunction structure beneficial to hydrogen sensitivity, achieving a high-sensitivity response to hydrogen with a detection limit as low as 1 ppm and excellent hydrogen selectivity (S0). H2 / S CO = ~106, S H2 / S NH3 = ~25), a relatively low operating temperature range (75℃ - 175℃), which solves the shortcomings of high operating temperature and poor hydrogen selectivity of semiconductor oxide sensors; it obtains a semiconductor metal oxide thin film hydrogen sensor with high sensitivity, short response time and low detection concentration, and the cost is greatly reduced compared with traditional noble metal modified semiconductor oxide hydrogen sensors; the hydrogen sensor obtained by this invention has a simple structure, excellent hydrogen sensitivity performance, and the preparation process is compatible with microelectronics process, which is convenient for application in integrated, miniaturized and intelligent microelectromechanical systems and multifunctional sensors. Attached Figure Description

[0016] Figure 1(a) is a scanning electron microscope (SEM) image of the porous Zn-HQ thin film in an embodiment of the present invention; Figure 1 (b) is a scanning electron microscope (SEM) image of the SnO2 / Zn-HQ / SiO2 / Si thin film hydrogen sensor sample in the embodiments of the present invention; Figure 1 (c) An atomic force microscope (AFM) image of the SnO2 / Zn-HQ / SiO2 / Si thin film hydrogen sensor sample in the embodiment of the present invention; Figure 1 (d) is a scanning electron microscope (SEM) cross-sectional image of the SnO2 / Zn-HQ / SiO2 / Si thin film hydrogen sensor sample in the embodiment of the present invention;

[0017] Figure 2 The surface XPS spectra of the SnO2 / Zn-HQ / SiO2 / Si samples in the embodiments of the present invention are as follows: (a) full spectrum, (b) Zn 2p, (c) Sn 3d, (d) O 1s;

[0018] Figure 3 The following are the following curves for SnO2 / Zn-HQ / SiO2 / Si samples with different ALD cycles (i.e., different thicknesses) in this embodiment of the invention: (a) sensitivity versus time curves, (b) effect of ALD cycle number on sensitivity, (c) effect of ALD cycle number on response time, and (d) effect of ALD cycle number on recovery time for 30 ppm hydrogen at a working temperature of 125 ℃.

[0019] Figure 4 The following are the following parameters for the SnO2 / Zn-HQ / SiO2 / Si samples in this embodiment of the invention: (a) sensitivity and (b) response / recovery time to 30 ppm hydrogen at different operating temperatures;

[0020] Figure 5 This is a long-term stability test of the SnO2 / Zn-HQ / SiO2 / Si sample after 6 months in the embodiments of the present invention;

[0021] Figure 6 The sensitivity response curves (a) and fitting results (b) of the SnO2 / Zn-HQ / SiO2 / Si samples in this embodiment of the invention for H2 concentrations of 1-1000 ppm at 175 ℃ are shown.

[0022] Figure 7 (a) Five consecutive repeatability tests of the SnO2 / Zn-HQ / SiO2 / Si sample at 175°C in the embodiments of the present invention; Figure 7 (b) Comparison of selectivity of SnO2 / Zn-HQ / SiO2 / Si samples in the embodiments of the present invention when passing through 30ppm H2 and several 30ppm interfering gases at the optimal operating temperature of 125 °C. Detailed Implementation

[0023] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments:

[0024] Example 1

[0025] A thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide comprises: a SiO2 / Si substrate, a porous Zn-HQ thin film, a SnO2 thin film, and a Pt interdigitated electrode.

[0026] The above-described method for manufacturing the sensor includes the following steps:

[0027] (1) Select SiO2 / Si as the substrate of the sensor, place it on the cleaning rack, then place the cleaning rack in the beaker, and then use acetone, isopropanol, anhydrous ethanol and deionized water to perform ultrasonic cleaning for 5 minutes each. Finally, blow the cleaned SiO2 / Si substrate with high-purity nitrogen (99.999%) for later use.

[0028] (2) A 20 nm thick porous Zn-HQ film was deposited on the SiO2 / Si substrate cleaned in step (1) using MLD. The deposition temperature was 200 °C. The precursor sources used were diethylzinc (DEZ) and hydroquinone (HQ). The pulse time and cleaning time of diethylzinc (DEZ) were 0.1 s and 5.0 s, respectively. The pulse time and cleaning time of hydroquinone (HQ) were 8.0 s and 4.0 s, respectively. The deposition cycle was 100 cycles.

[0029] (3) Based on step (2), a 14 nm thick SnO2 film was deposited using ALD technology at a deposition temperature of 120 °C. The precursor sources used were tetra(dimethylamino)tin (TDMSn) and water (H2O). The pulse and cleaning times for tetra(dimethylamino)tin (TDMSn) and water (H2O) were 0.2 s and 6.0 s, respectively. The deposition cycle number was 140 cycles.

[0030] (4) Place the interdigitated electrode mask tightly onto the sample after step (3), and then use magnetron sputtering to sputter a ~100 nm thick metal platinum (Pt) as a conductive electrode. After wiring and encapsulation, it can be used as a sensitive element for detecting hydrogen.

[0031] Figure 1SEM and AFM characterization of the SnO2 / Zn-HQ / SiO2 / Si sample show that Zn-HQ film and SnO2 film are uniformly deposited sequentially on SiO2 / Si substrate, and the SnO2 film surface has a large number of shallow nanopores, which are formed by conformal deposition of SnO2 on porous Zn-HQ during SnO2 growth.

[0032] Figure 2 The image shows the XPS spectrum of the SnO2 / Zn-HQ / SiO2 / Si sample. The image indicates that the sample surface contains Sn and O elements, where Sn is SnO2. 4+ Since the porous Zn-HQ film was completely conformally covered by the SnO2 film, Zn could not be detected on the sample surface. The asymmetric O 1s peak after deep profiling can be divided into lattice oxygen and oxygen vacancies, with the surface oxygen vacancy concentration as high as 25.12%.

[0033] Figure 3 To investigate the effect of different SnO2 cycle numbers on the hydrogen sensing performance of the SnO2 / Zn-HQ / SiO2 / Si thin-film hydrogen sensor, Figure (a) shows the sensitivity change curve over time, indicating that the device has the highest hydrogen response at 140 cycles. Based on Figures (b), (c), and (d) showing the effects of different cycle numbers on sensitivity, response time, and recovery time, it can be concluded that 140 cycles is the optimal ALD cycle number for depositing the SnO2 thin film. Both excessively thin and excessively thick gas-sensitive material layers will affect the hydrogen sensing performance of the device.

[0034] Figure 4 The sensitivity of the SnO2 / Zn-HQ / SiO2 / Si sample as a function of temperature when 30 ppm H2 is introduced at different operating temperatures is shown. It can be seen that this hydrogen sensor has a high sensitivity of 247.06 at 75℃ and a response time of nearly 1000 seconds. When the operating temperature is increased to 125℃, the sensitivity can reach 112.54, while the response time is as short as 151 s, showing the best overall hydrogen sensing performance.

[0035] Figure 5 By plotting and comparing the SnO2 / Zn-HQ / SiO2 / Si sample after 6 months of storage with the previous data, it was found that the sensitivity of the sample did not change significantly after long-term storage, but the response speed increased, which is beneficial for the use of hydrogen sensors.

[0036] Figure 6 The results show that the sample has a detection range of 1-1000 ppm and reflects a linear relationship between concentration and sensitivity on a logarithmic scale.

[0037] Figure 7 (a) shows that after multiple consecutive tests, the hydrogen-sensitivity performance of the sample remained stable and even slightly enhanced; Figure 7(b) This confirms that the sample exhibits excellent selectivity even without noble metal modification.

[0038] Example 2

[0039] A composite thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide comprises: a polyethylene terephthalate (PET) substrate, a porous Zn-HQ thin film, a ZnO thin film, and an Au interdigitated electrode.

[0040] The above-described method for manufacturing the sensor includes the following steps:

[0041] (1) Select PET as the substrate of the sensor, and use acetone, isopropanol, anhydrous ethanol and deionized water to perform ultrasonic cleaning for 5 minutes each. Finally, dry the cleaned PET substrate with high-purity nitrogen (99.999%) for later use.

[0042] (2) A 40 nm thick porous Zn-HQ film was deposited on the PET substrate cleaned in step (1) using MLD at a deposition temperature of 170 °C. The precursor sources used were diethylzinc (DEZ) and hydroquinone (HQ). The pulse time and cleaning time for diethylzinc (DEZ) were 0.1 s and 5.0 s, respectively, and the pulse time and cleaning time for hydroquinone (HQ) were 8.0 s and 4.0 s, respectively. The deposition cycle was 200 cycles.

[0043] (3) Based on step (2), a 38 nm thick ZnO film was deposited using ALD technology at a deposition temperature of 200 °C. The precursor sources used were diethylzinc (DEZ) and water (H2O). The pulse and cleaning times for tetra(dimethylamino)tin (TDMSn) and water (H2O) were 0.1 s and 4.0 s, respectively, and the deposition cycle number was 380 cycles.

[0044] (4) Place the interdigitated electrode mask tightly onto the sample after step (3), and then use magnetron sputtering to sputter a gold (Au) layer with a thickness of ~150 nm as a conductive electrode. After wiring and encapsulation, it can be used as a sensitive element for detecting hydrogen.

[0045] Example 3

[0046] A composite thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide includes: a quartz glass substrate, a porous Zn-HQ thin film, a TiO2 thin film, and an Al interdigitated electrode.

[0047] The above-described method for manufacturing the sensor includes the following steps:

[0048] (1) Select quartz glass as the substrate of the sensor, and use acetone, isopropanol, anhydrous ethanol and deionized water to perform ultrasonic cleaning for 5 minutes each. Finally, dry the cleaned quartz glass substrate with high-purity nitrogen (99.999%) and set it aside.

[0049] (2) A 50 nm thick porous Zn-HQ film was deposited on the quartz glass substrate cleaned in step (1) using MLD. The deposition temperature was 250 °C. The precursor sources used were diethylzinc (EZ) and hydroquinone (HQ). The pulse time and cleaning time of diethylzinc (DEZ) were 0.1 s and 5.0 s, respectively. The pulse time and cleaning time of hydroquinone (HQ) were 8.0 s and 4.0 s, respectively. The deposition cycle number was 250 cycles.

[0050] (3) Based on step (2), a 10 nm thick TiO2 film was deposited using ALD technology at a deposition temperature of 250 °C. The precursor sources used were titanium tetrachloride (TiCl4) and water (H2O). The pulse and cleaning times for titanium tetrachloride (TiCl4) and water (H2O) were 0.1 s and 4.0 s, respectively. The deposition cycle number was 500 cycles.

[0051] (4) The interdigitated electrode mask is attached to the sample after step (3) is completed. Then, a metal aluminum (Al) with a thickness of ~200 nm is deposited as a conductive electrode by vacuum evaporation. After wiring and encapsulation, it can be used as a sensitive element for detecting hydrogen.

[0052] Example 4

[0053] A composite thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide includes: a polyimide (PI) substrate, a porous Zn-HQ thin film, an Fe2O3 thin film, and a Ta interdigitated electrode.

[0054] The above-described method for manufacturing the sensor includes the following steps:

[0055] (1) Select PI as the substrate of the sensor, and use acetone, isopropanol, anhydrous ethanol and deionized water to perform ultrasonic cleaning for 5 minutes each. Finally, dry the cleaned PI substrate with high-purity nitrogen (99.999%) and set it aside.

[0056] (2) A 30 nm thick porous Zn-HQ film was deposited on the PI substrate cleaned in step (1) using MLD. The deposition temperature was 200 °C. The precursor sources used were diethylzinc (DEZ) and hydroquinone (HQ). The pulse time and cleaning time of diethylzinc (DEZ) were 0.1 s and 5.0 s, respectively. The pulse time and cleaning time of hydroquinone (HQ) were 8.0 s and 4.0 s, respectively. The deposition cycle number was 150 cycles.

[0057] (3) Based on step (2), a 20 nm thick Fe2O3 film was deposited using ALD technology at a deposition temperature of 300 °C. The precursor sources used were ferrocene (Fe(C5H5)2) and ozone (O3). The pulse and cleaning times for ferrocene (Fe(C5H5)2) and ozone (O3) were 2.0 s and 5.0 s, respectively. The deposition cycle number was 200 cycles.

[0058] (4) Place the interdigitated electrode mask tightly onto the sample after step (3), and then use magnetron sputtering to sputter a 150 nm thick tantalum (Ta) metal as a conductive electrode. After wiring and encapsulation, it can be used as a sensitive element for detecting hydrogen.

[0059] Example 5

[0060] A composite thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide includes a polyethylene naphthalate (PEN) substrate, a porous Zn-HQ thin film, a MoO3 thin film, and tungsten W interdigitated electrodes.

[0061] The above-described method for manufacturing the sensor includes the following steps:

[0062] (1) PEN was selected as the substrate of the sensor. It was ultrasonically cleaned for 5 minutes each with acetone, isopropanol, anhydrous ethanol and deionized water. Finally, the cleaned PEN substrate was dried with high-purity nitrogen (99.999%) and set aside.

[0063] (2) A 50 nm thick porous Zn-HQ film was deposited on the PEN substrate cleaned in step (1) using MLD. The deposition temperature was 170 °C. The precursor sources used were diethylzinc (DEZ) and hydroquinone (HQ). The pulse time and cleaning time of diethylzinc (DEZ) were 0.1 s and 5.0 s, respectively. The pulse time and cleaning time of hydroquinone (HQ) were 8.0 s and 4.0 s, respectively. The deposition cycle number was 200 cycles.

[0064] (3) Based on step (2), a 45 nm thick MoO3 film was deposited using ALD technology at a deposition temperature of 100 °C. The precursor sources used were molybdenum hexacarbonyl (Mo(CO)6) and deionized water, respectively. The pulse and cleaning times for molybdenum hexacarbonyl (Mo(CO)6) and deionized water were 3.0 s and 6.0 s, respectively. The deposition cycle number was 500 cycles.

[0065] (4) Place the interdigitated electrode mask tightly onto the sample after step (3), and then use magnetron sputtering to sputter a 150 nm thick tungsten (W) metal as a conductive electrode. After wiring and encapsulation, it can be used as a sensitive element for detecting hydrogen.

[0066] The above are merely preferred embodiments of the present invention, which will help those skilled in the art to further understand the present invention, but do not limit the present invention in any way. It should be noted that for those skilled in the art, any modifications and improvements made without departing from the concept of the present invention are protected by the present invention.

Claims

1. A thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide, characterized in that, From bottom to top, the structure consists of: an insulating substrate, an inorganic-organic hybrid nanoporous membrane Zn-HQ layer, a semiconductor metal oxide thin film layer, and a conductive electrode layer; wherein, the inorganic-organic hybrid nanoporous membrane Zn-HQ layer has a thickness of 10-50 nm; the semiconductor metal oxide thin film layer has a thickness of 10-50 nm; the surface of the metal oxide thin film contains a large number of shallow nanopores formed by the permeation of the inorganic-organic hybrid nanoporous membrane Zn-HQ layer during the growth of the metal oxide thin film; the semiconductor metal oxide includes tin oxide, zinc oxide, titanium oxide, iron oxide, and molybdenum oxide.

2. A method for fabricating a thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide, wherein the thin-film hydrogen sensor is based on the one described in claim 1, characterized in that, Includes the following steps: (1) Clean and dry the insulating substrate for later use; (2) On the cleaned insulating substrate, an inorganic-organic hybrid nanoporous membrane Zn-HQ layer was grown using MLD technology. The reaction parameters of MLD technology were set as follows: the source temperature of the metal precursor diethylzinc was room temperature, the source temperature of the hydroquinone organic precursor was 150 ℃, the carrier gas and cleaning gas were 99.999% high-purity nitrogen, the deposition temperature was 170℃-300℃, and the pulse cycle used for deposition was: 0.1-2 s metal precursor pulse, 2-15 s cleaning pulse, 5-25 s organic precursor pulse, 2-20 s cleaning pulse, and the number of deposition cycles was 35-200. (3) On the inorganic-organic hybrid nanoporous membrane Zn-HQ layer / insulating substrate grown in step (2), a semiconductor metal oxide thin film is deposited by ALD technology. The reaction parameters of ALD technology are set as follows: the source temperature of the metal precursor is room temperature-200℃, the oxygen source precursor is deionized water or ozone, the source temperature is room temperature, the carrier gas and cleaning gas are 99.999% high-purity nitrogen, the deposition temperature is 50℃-450℃, the pulse cycle used for deposition is: 0.1-2 s metal precursor pulse, 2-15 s cleaning pulse, 0.1-5 s oxygen source pulse, 2-20 s cleaning pulse, and the number of deposition cycles is 100-2000. (4) A conductive electrode is deposited on the semiconductor metal oxide thin film / inorganic-organic hybrid nanoporous film Zn-HQ layer / insulating substrate prepared in step (3), and after lead wires and encapsulation, a thin film hydrogen sensor is obtained.

3. The method for fabricating a thin-film hydrogen sensor based on an inorganic-organic hybrid nanoporous membrane / semiconductor metal oxide according to claim 2, characterized in that, The thickness of the conductive electrode deposited in step (4) is 100-200 nm.

Images