Ion gate transistor and preparation method thereof, mask sensing device and application thereof

Abstract

The application relates to an ion-gated transistor and a preparation method and a mask sensing device and application thereof. The preparation method comprises the following steps: firstly, preparing a transistor by adopting a multilayer photoetching technology; secondly, modifying a gate of the transistor by adopting an aptamer with a terminal group of a mercapto group; wherein the aptamer comprises at least one of a SARS-CoV-2 aptamer, an H1N1 aptamer and an H5N1 aptamer; finally, forming an ion gel dielectric layer on the modified transistor, and obtaining the ion-gated transistor. Compared with the prior art, the application can realize real-time and continuous detection of pathogenic bacteria of respiratory infectious diseases in air, and thus solves the problem that there is currently a lack of technology for rapidly diagnosing respiratory infectious diseases in an early stage.

Description

Technical Field

[0001] This invention belongs to the field of wearable smart electronics technology, and relates to an ion-gated transistor and its preparation method, as well as a mask sensing device and its application. Background Technology

[0002] Respiratory infectious diseases are illnesses caused by pathogens invading the human body through the respiratory tract, including the nasal cavity, pharynx, and trachea. They have extremely high morbidity and infectivity, easily leading to outbreaks and epidemics, posing a serious threat to human life and health. During the spread of respiratory infectious diseases, droplets and air are the main transmission media. Therefore, direct detection of airborne infectious disease pathogens can lead to rapid disease diagnosis and prevent the spread of infection in the early stages of an outbreak.

[0003] Current clinical diagnostic methods mainly include reverse transcription combined with real-time polymerase chain reaction (RT-PCR) and enzyme-linked immunosorbent assay (ELISA). However, these techniques require time-consuming processes such as sampling and laboratory analysis, as well as expensive equipment and specialized operators, making them unsuitable for point-of-care testing (POCT). Therefore, there is a need to develop a rapid, sensitive, portable, and simple wearable device for the trace detection of airborne respiratory infectious disease viruses. Ion-gated transistors (IGTs) are favored by researchers due to their advantages such as output signal amplification, high sensitivity, small size, and low power consumption. However, in the current technology, no wearable device based on IGTs for detecting airborne infectious viruses has yet been developed. Summary of the Invention

[0004] The purpose of this invention is to provide an ion-gated transistor and its preparation method, as well as a mask sensing device and its application, to solve the problems that existing respiratory infectious disease monitoring equipment is expensive, complex to operate, and unsuitable for directly diagnosing respiratory infectious diseases through air samples.

[0005] The objective of this invention can be achieved through the following technical solutions:

[0006] A method for fabricating an ion-gated transistor includes the following steps:

[0007] S1: Flexible transistors are fabricated using multilayer photolithography technology;

[0008] S2: The gate of the flexible transistor is modified with an aptamer with a thiol end group; wherein the aptamer is an aptamer corresponding to a virus associated with respiratory infectious diseases.

[0009] S3: An ion-gel dielectric layer is formed on the modified flexible transistor to obtain an ion-gated transistor.

[0010] Further, step S1 includes:

[0011] S1-1: Chromium and gold layers are sequentially deposited on a flexible substrate by ultraviolet lithography and thermal evaporation to form the source, drain and gate.

[0012] S1-2: The channel layer of the device is prepared by secondary photolithography and spin coating of poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate with a thickness of 300~350nm, and a transistor is obtained.

[0013] Further, in step S1-1, the thickness of the chromium layer is 5~10nm, the thickness of the gold layer is 50~100nm, and the flexible substrate is polyethylene terephthalate.

[0014] In steps S1-2, the thickness of the channel layer is 300~350nm; the spin coating speed is 1000~1500 rpm.

[0015] Furthermore, step S2 includes:

[0016] S2-1: Prepare an aptamer solution, mix it with a tris(2-carboxyethyl)phosphine solution, and allow it to stand for activation;

[0017] S2-2: The activated mixed solution is dropped onto the gate of the transistor, then incubated at room temperature for 18-24 hours, then soaked in BSA solution, and finally washed and dried to obtain the modified transistor.

[0018] Further, in step S2-1, the aptamer solution includes at least one of SARS-CoV-2 aptamer solution, H1N1 aptamer solution, and H5N1 aptamer solution, with a solution concentration of 20~25μM, and the solvent is preferably 1X PBS buffer.

[0019] The tris(2-carboxyethyl)phosphine solution is preferably a 10-15 mM aqueous solution;

[0020] The mixing volume ratio of the aptamer solution to the tris(2-carboxyethyl)phosphine solution is 98:2 to 99:1;

[0021] During the static activation process, the activation temperature is room temperature and the activation time is 1~1.5h.

[0022] Further, in step S2-2, the concentration of the BSA solution is 0.1~1 mg / mL, and the treatment time is 1~1.5h;

[0023] The washing process used 1X PBS buffer as the detergent; the drying process included drying with nitrogen gas.

[0024] Further, step S3 includes:

[0025] S3-1: Water is mixed with dimethyl sulfoxide and a heat-soluble polymer to obtain the first reaction solution;

[0026] S3-2: Under closed conditions, the first reaction solution is stirred and heated at 80~90℃ for 1.5~2h, then the ionic solution is added, and the reaction is continued to be stirred for 30~45min to obtain the second reaction solution;

[0027] S3-3: The second reaction solution is 3D printed onto the modified flexible transistor, and after multiple freezing cycles, an ion gel dielectric layer is formed, resulting in an ion-gated transistor.

[0028] Further, in step S3-1, the heat-soluble polymer is polyvinyl alcohol; in step S3-3, the ionic solution is 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide;

[0029] The mass ratio of water, dimethyl sulfoxide, thermosoluble polymer, and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide is (3.2~3.8):(0.8~1.2):(0.6~1.0):(1.25~1.35).

[0030] In step S3-3, during the 3D printing process, the printing temperature is 40~48℃ and the printing layer thickness is 0.8~1.5mm;

[0031] The multiple freezing process includes: first freezing at -20℃ to -40℃ for 30 to 60 minutes, then taking it out and letting it stand at room temperature for 30 to 60 minutes, and then freezing at -20℃ to -40℃ for 30 to 60 minutes, and repeating this cycle.

[0032] A mask sensing device with integrated ion-gated transistor includes a mask body, a breathing valve disposed on the mask body, and an ion-gated transistor disposed within the breathing valve.

[0033] The ion-gated transistor is fabricated using the method described in any one of claims 1 to 8.

[0034] Furthermore, the ion-gated transistor is also electrically connected to the wireless transmission module;

[0035] The breathing valve includes an upper breathing valve body and a lower breathing valve body, with the detection part of the ion-gated transistor clamped and fixed between the upper breathing valve body and the lower breathing valve body.

[0036] The upper breathing valve body has an air inlet chamber on one side corresponding to the detection area, and multiple air inlet pipes connected to the air inlet chamber are opened on the other opposite side; the lower breathing valve body has multiple air outlet branch pipes arranged in parallel on one side corresponding to the detection area, and multiple air outlet main pipes connected to the air outlet branch pipes are opened on the other opposite side.

[0037] An application of a mask sensing device integrating an ion-gated transistor includes using the mask sensing device to remotely detect trace target molecules in a gas, achieving real-time, rapid, and sensitive detection; wherein the trace target molecules include viral proteins related to respiratory infectious diseases.

[0038] This invention provides an ion-gated transistor and its fabrication method, as well as a mask sensing device integrating the ion-gated transistor. The ion-gated transistor is fabricated by synthesizing a thermosoluble polymer-ion gel based on a dual-solvent system, and then using 3D printing technology to pattern it on the electrode layer of the transistor to serve as a dielectric layer. Using a novel ion gel as the dielectric layer of the transistor, the resulting ion-gated transistor exhibits excellent field-effect performance. Modification of the ion-gated transistor with an aptamer probe enables highly sensitive detection of respiratory infectious disease viral proteins existing in gaseous form.

[0039] The aforementioned mask sensing device also includes a breathing valve and a circuit board. The breathing valve consists of a detachable upper and lower layer structure fabricated using 3D printing, and its internal structure features tiny, delicate flower-shaped air-guiding tubes to enrich the target air. The circuit board integrates a wireless transmission module. When this module is assembled with an ion-gated transistor sensor onto the mask, the resulting wearable mask sensing device can achieve real-time, continuous detection of airborne respiratory pathogens. This addresses the current lack of technology for rapid diagnosis of respiratory infectious diseases in their early stages.

[0040] Compared with the prior art, the present invention has the following characteristics:

[0041] 1) The mask sensing device with integrated ion-gated transistors in this invention uses ion gel as the dielectric layer, which enables the ion-gated transistors to have an all-solid-state structure and can be integrated into wearable devices for detection scenarios where gas is the target.

[0042] 2) The ion gel layer in this invention provides a sensitive gate control function, which, combined with the output signal amplification function of the ion-gated transistor, enables trace detection of viral proteins of respiratory infectious diseases in the air, and has the characteristics of rapid response and simple operation.

[0043] 3) The mask sensing device with integrated ion-gated transistor in this invention integrates a wireless transmission system. As a wearable device in the form of a special mask, it can provide personal protection while enabling continuous and remote real-time monitoring, providing an effective method for the early diagnosis and prevention of respiratory infectious diseases. Attached Figure Description

[0044] Figure 1 This is a schematic diagram of the structure of the ion-gated transistor prepared in Example 1;

[0045] Figure 2 This is a schematic diagram of the breathing valve prepared in Example 1, where (a) and (b) are the top and front views of the upper breathing valve, respectively, and (c) and (d) are the top and front views of the lower breathing valve, respectively.

[0046] Figure 3 This is a schematic diagram of the mask sensing device with integrated ion-gated transistors prepared in Example 1;

[0047] Figure 4 A schematic diagram of the structure of a breather valve for encapsulating an ion-gated transistor;

[0048] Figure 5 The transfer characteristic curve of the mask sensing device with integrated ion-gated transistor prepared in Example 2;

[0049] Figure 6 This is a schematic diagram of the specific gas sensitivity testing device used in this invention;

[0050] Figure 7 The transfer characteristic curve of the mask sensing device with integrated SARS-CoV-2-treated ion-gated transistor prepared in Example 3 during the SARS-CoV-2 specific gas sensitivity test;

[0051] Figure 8 The transfer characteristic curve of the mask sensing device with integrated H1N1-treated ion-gated transistor prepared in Example 4 during the SARS-CoV-2 specific gas sensitivity test;

[0052] Figure 9 The transfer characteristic curve of the mask sensing device with integrated H5N1-treated ion-gated transistor prepared in Example 5 during the SARS-CoV-2 specific gas sensitivity test;

[0053] Explanation of markings in the diagram:

[0054] 1-Flexible substrate, 2-Chromium layer, 3-Gold layer, 4-Channel layer, 5-Ion gel dielectric layer;

[0055] 6-Breathing valve: 601-Upper breathing valve body, 602-Lower breathing valve body, 603-Inlet chamber, 604-Inlet pipe, 605-Outlet branch pipe, 606-Outlet main pipe;

[0056] 7-PCB circuit board, 8-ZIF interface cable, 9-ion-gated transistor;

[0057] 10-Gas washing bottle, 11-Test chamber, 12-Liquid-sealed beaker. Detailed Implementation

[0058] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. These embodiments are based on the technical solution of the present invention and provide detailed implementation methods and specific operating procedures. However, the scope of protection of the present invention is not limited to the following embodiments.

[0059] Example 1:

[0060] A mask sensing device integrating an ion-gated transistor, the preparation method of which includes the following steps:

[0061] S1: Fabrication of ion-gated transistor electrodes:

[0062] S1-1: Polyethylene terephthalate with a thickness of 0.018 mm is used as a flexible substrate 1, and is cleaned sequentially with deionized water and ethanol and then with plasma ozone.

[0063] S1-2: A chromium layer 2 and a gold layer 3 are sequentially deposited on a flexible substrate 1 by ultraviolet lithography and thermal evaporation, and the source, drain and gate are formed simultaneously; the thickness of the chromium layer is about 10 nm and the thickness of the gold layer is about 100 nm.

[0064] S1-3: A poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate layer was prepared between the source and drain electrodes by secondary photolithography and spin coating at 1000 rpm, which served as the channel layer 4 of the device. The thickness of the layer was approximately 300 nm, and a transistor was obtained.

[0065] S2: Fabrication of the dielectric layer of the ion-gated transistor:

[0066] S2-1: Add 3.5 g of water and 1.0 g of dimethyl sulfoxide to a beaker, add 0.8 g of polyvinyl alcohol, and stir at 300 rpm for 10 minutes at room temperature to obtain the first reaction solution;

[0067] S2-2: After sealing the beaker containing the first reaction solution with plastic wrap, transfer it to an oil bath and react at 85 °C with a stirring speed of 300 rpm for 2 hours to allow the heat-soluble polymer to fully dissolve.

[0068] S2-3: Weigh 1.3 g of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide as an ionic solution. Using a standard 3 mL syringe, slowly add the ionic solution to the first reaction solution multiple times while stirring. Continue the reaction for 30 minutes to obtain the second reaction solution.

[0069] S2-4: After the reaction is complete, the second reaction liquid is transferred to the syringe used for 3D printing. The temperature during 3D printing is set to 45 ℃ and the thickness of the printed gel is 1.0 mm. The transistor is printed and the printed layer covers the source, drain, channel layer 4 and part of the gate, while exposing another part of the gate. When the aptamer is modified on the gate, the exposed part can be used as a detection site.

[0070] S2-5: Place the product obtained in step S2-4 in a refrigerator and freeze it at -20°C for 60 minutes. Remove it and let it sit at room temperature for 30 minutes, then place it back in the refrigerator. Repeat this process four times to form the ion-glued dielectric layer 5 and obtain the ion-glued transistor 9. The structure of the ion-glued transistor is as follows: Figure 1 As shown.

[0071] S3: Fabrication of a mask sensing device integrating ion-gated transistors:

[0072] A breather valve, consisting of two layers with intricate internal airway structures, was fabricated using photosensitive resin (ANYCUBIC) via 3D printing. This valve encapsulates and protects the detection area of ​​the ion-gated transistor while simultaneously collecting the gaseous sample. The structure of this breather valve is as follows: Figure 2 , Figure 4 As shown, the device includes an upper breathing valve body 601 and a lower breathing valve body 602. The upper breathing valve body 601 has an air inlet chamber 603 on one side corresponding to the detection area, and multiple air inlet pipes 604 connected to the air inlet chamber 603 on the opposite side. The lower breathing valve body 602 has multiple air outlet branch pipes 605 arranged side-by-side on one side corresponding to the detection area, and multiple main air outlet pipes 606 connected to the air outlet branch pipes 605 on the opposite side. The detection area of ​​the ion-gated transistor 9 is clamped and fixed between the upper breathing valve body 601 and the lower breathing valve body 602.

[0073] The ion-gated transistor 9 is connected to the PCB circuit board 7 of the integrated wireless module via a ZIF interface cable 8, and is powered by a small lithium battery. Finally, the entire device is assembled on the outward-facing side of the mask, thus obtaining the mask sensing device with integrated ion-gated transistors. Figure 3 As shown. The layered structure of the breathing valve with encapsulated ion-gated transistors on the mask is as follows: Figure 4 As shown.

[0074] Example 2:

[0075] The mask sensing device with integrated ion-gated transistors in this embodiment differs from that in Embodiment 1 only in that:

[0076] S2: Fabrication of the dielectric layer of the ion-gated transistor:

[0077] S2-1: Add 3.5 g of water and 1.0 g of dimethyl sulfoxide to a beaker, add 0.65 g of polyvinyl alcohol, and stir at 300 rpm for 10 minutes at room temperature to obtain the first reaction solution;

[0078] S2-2: After sealing the beaker containing the first reaction solution, transfer it to an oil bath and react at 85°C with a stirring speed of 300 rpm for 2 hours to allow the hot-soluble polymer to fully dissolve.

[0079] S2-3: Weigh 1.3 g of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide as an ionic solution, and slowly add the ionic solution to the first reaction solution with stirring using a regular 3 mL syringe. Continue the reaction for 30 minutes to obtain the second reaction solution.

[0080] S2-4: After the reaction is complete, the second reaction liquid is transferred to the syringe used for 3D printing. The temperature during 3D printing is set to 45 ℃ and the thickness of the printed gel is 1.0 mm. The transistor is printed and the printed layer covers the source, drain, channel layer 4 and part of the gate, while exposing another part of the gate.

[0081] S2-5: Place the product obtained in step S2-4 into a refrigerator and freeze it at -20 ℃ for 60 minutes. Remove it and let it stand at room temperature for 30 minutes. Then put it back into the refrigerator. Repeat the above operation 4 times to form the ion gel dielectric layer 5 and obtain the ion-gated transistor. The rest is the same as in Example 1.

[0082] This embodiment also includes testing the transfer characteristic curves of the mask sensing device with integrated ion-gated transistors using a Keithley 2612B digital source meter. The gate voltage was set to 0.04 V, and the source-drain voltage was between 0 and 1.6 V. The results are as follows: Figure 5 As shown, the curve corresponding to the left vertical axis is the transfer characteristic curve of the ion-gated transistor, and the curve corresponding to the right vertical axis is the transconductance curve obtained by differentiating the transfer characteristic curve. The results show that the ion-gated transistor has excellent field-effect performance.

[0083] Example 3:

[0084] The mask sensing device with an ion-gated transistor modified with a SARS-CoV-2 aptamer in this embodiment differs from that in Example 2 only in that:

[0085] S2: Fabrication of ion-gated transistors modified with SARS-CoV-2 aptamers:

[0086] S2-1: The transistor is cleaned sequentially with deionized water and ethanol, then cleaned with plasma ozone, and finally dried with nitrogen to obtain a pre-treated transistor.

[0087] S2-2: Prepare a 20 μM SARS-CoV-2 aptamer solution (Angpu Topmai Biotechnology Co., Ltd., S1-79-56nt, 1X PBS buffer) using 1X PBS buffer (pH=7.4) as the solvent, and mix this solution with 10 mM tris(2-carboxyethyl)phosphine (TCEP) deionized water at a volume ratio of 99:1, and incubate at room temperature for 1 h for activation;

[0088] S2-3: The activated mixed solution is dropped onto the gate of the pretreated transistor and then incubated at room temperature for 18 hours;

[0089] S2-4: The SARS-CoV-2 aptamer was modified by soaking in BSA (0.1 mg / mL) for 1 h to block nonspecific binding, followed by rinsing with 1XPBS buffer (pH=7.4) and drying under nitrogen to obtain the transistor.

[0090] S2-5: Add 3.5 g of water and 1.0 g of dimethyl sulfoxide to a beaker, add 0.65 g of polyvinyl alcohol, and stir at 300 rpm for 10 minutes at room temperature to obtain the first reaction solution;

[0091] S2-6: After sealing the beaker containing the first reaction solution, transfer it to an oil bath and react at 85°C with a stirring speed of 300 rpm for 2 hours to allow the hot-soluble polymer to fully dissolve.

[0092] S2-7: Weigh 1.3 g of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide as an ionic solution. Using a standard 3 mL syringe, slowly add the ionic solution to the first reaction solution while stirring. Continue the reaction for 30 minutes to obtain the second reaction solution.

[0093] S2-8: After the reaction is complete, the second reaction solution is transferred to the syringe used for 3D printing. The temperature for 3D printing is set to 45 ℃ and the thickness of the printed gel is 1.0 mm. The gel is then printed onto the transistor.

[0094] S2-9: Place the product obtained in step S2-8 into a refrigerator and freeze it at -20 ℃ for 60 minutes. Take it out and let it stand at room temperature for 30 minutes. Then put it back into the refrigerator. Repeat the above operation 3 to 4 times to obtain the ion-gated transistor modified with SARS-CoV-2 aptamer.

[0095] S3: Fabrication of a mask sensing device integrating an ion-gated transistor modified with a SARS-CoV-2 aptamer:

[0096] A breathing valve (same structure as in Example 1) consisting of two layers with fine internal tracheal structures was fabricated using photosensitive resin (ANYCUBIC) via 3D printing. This valve was used to encapsulate and protect the detection site of the ion-gated transistor modified with the SARS-CoV-2 aptamer, while also serving to collect gaseous samples.

[0097] The ion-gated transistor is connected to the circuit board of the integrated wireless module via a ZIF interface line and powered by a small lithium battery. Finally, the entire device is assembled on the outward side of the mask, thus obtaining a mask sensing device with an integrated ion-gated transistor modified with SARS-CoV-2 aptamers.

[0098] The rest is the same as in Example 1.

[0099] This embodiment also includes testing the response of a mask sensing device with integrated ion-gated transistors to a carrier gas containing the SARS-CoV-2 spike protein. The testing device is as follows: Figure 6 As shown, the device includes a gas washing bottle 10 containing a viral protein solution, a test chamber 11, and a liquid-sealed beaker 12 connected in sequence. One end of the gas washing bottle 10 serves as a nitrogen inlet, and the other end is connected to the sealed test chamber 11, which is made of acrylic material.

[0100] Before testing, the chamber and ventilation pipes were cleaned with high-purity nitrogen (concentration of 99.999%) for at least 1 hour. Then, the mask sensing device with ion-gated transistors modified with SARS-CoV-2 aptamers was placed in the test chamber, and the chamber was cleaned with high-purity nitrogen for 30 minutes.

[0101] During testing, the flow rate of high-purity nitrogen was controlled at 100 mL / min using a glass rotor flowmeter. The nitrogen gas was then passed through a gas washing bottle 10 containing 15 mL of 10 pg / mL SARS-CoV-2 spike protein solution (Beijing Yiqiao Shenzhou Technology Co., Ltd., 40591-V08H, with 1X PBS buffer as the solvent) and then into the test chamber 11 where the mask sensing device was placed. Deionized water was introduced through the outlet port of the chamber.

[0102] The ventilation process lasted for 20 minutes, and then tests were conducted at parameters of 0.04 V gate voltage and 0~1.5 V source-drain voltage (transfer characteristic curve, test method is the same as in Example 2). The test results are as follows. Figure 7As shown, "0" represents the transfer characteristic curve measured by the ion-gated transistor mask sensor when no carrier gas containing SARS-CoV-2 spike protein solution is introduced into the test chamber; "SARS-CoV-2" represents the transfer characteristic curve measured by the ion-gated transistor mask sensor when carrier gas containing SARS-CoV-2 spike protein solution is introduced into the test chamber. When carrier gas containing SARS-CoV-2 spike protein solution is introduced, the maximum current value of the transfer characteristic curve of the ion-gated transistor mask sensor modified with SARS-CoV-2 aptamer decreases, indicating that the sensor can detect low concentrations of gaseous SARS-CoV-2 spike protein.

[0103] Example 4:

[0104] The mask sensing device with an integrated H1N1 aptamer-modified ion-gated transistor in this embodiment differs from that in Embodiment 3 only in that:

[0105] In step S2-2, a 20 μM H1N1 aptamer solution (Sangon Biotech Co., Ltd., nucleotide sequence as shown in SEQ ID NO.1, specifically 5′-AATTAACCCTCACTAAAGGGCTGAGTCTCAAAACCGCAATAACTGGTTGTATGGTCGAATAAGTTAA-3′, wherein the 5′ end is modified with a thiol group (SH); the solvent is 1X PBS buffer) is used instead of the SARS-CoV-2 aptamer solution.

[0106] During the test, the flow rate of high-purity nitrogen was 100 mL / min, and 15 mL of 10 pg / mL H1N1 protein solution (Beijing Yiqiao Shenzhou Technology Co., Ltd., 11684-V08H, solvent is 1X PBS buffer) was used instead of SARS-CoV-2 spike protein solution in the gas washing bottle.

[0107] The rest is the same as in Example 3. The test results are as follows: Figure 8 As shown, "0" represents the transfer characteristic curve measured by the ion-gated transistor mask sensor when no carrier gas containing H1N1 protein solution is introduced into the test chamber; "H1N1" represents the transfer characteristic curve measured by the ion-gated transistor mask sensor when carrier gas containing H1N1 protein solution is introduced into the test chamber. When carrier gas containing H1N1 protein solution is introduced, the maximum current value of the transfer characteristic curve of the ion-gated transistor mask sensor modified with H1N1 aptamer decreases, indicating that the sensor can detect low concentrations of gaseous H1N1 protein.

[0108] Example 5:

[0109] The mask sensing device with an integrated H5N1 aptamer-modified ion-gated transistor in this embodiment differs from that in Embodiment 3 only in that:

[0110] In step S2-2, a 20 μM H5N1 aptamer solution (Sangon Biotech Co., Ltd., nucleotide sequence as shown in SEQ ID NO.2, specifically 5′-AATTAACCCTCACTAAAGGGCTGAGTCGAATAAGTTAA-3′, wherein the 5′ end is modified with a thiol group (SH); the solvent is 1X PBS buffer) is used instead of the SARS-CoV-2 aptamer solution.

[0111] During the test, the flow rate of high-purity nitrogen was 100 mL / min, and 15 mL of 10 pg / mL H5N1 protein solution (Beijing Yiqiao Shenzhou Technology Co., Ltd., 11062-V08H1, solvent is 1X PBS buffer) was used instead of SARS-CoV-2 spike protein solution in the gas washing bottle.

[0112] The rest is the same as in Example 3. The test results are as follows: Figure 9 As shown, "0" represents the transfer characteristic curve measured by the ion-gated transistor mask sensor when no carrier gas containing H5N1 protein solution is introduced into the test chamber; "H5N1" represents the transfer characteristic curve measured by the ion-gated transistor mask sensor when carrier gas containing H5N1 protein solution is introduced into the test chamber. When carrier gas containing H5N1 protein solution is introduced, the maximum current value of the transfer characteristic curve of the ion-gated transistor mask sensor modified with H5N1 aptamer decreases, indicating that the sensor can detect low concentrations of gaseous H5N1 protein.

[0113] The sequence involved in this invention is as follows:

[0114] SEQ ID No. 1:

[0115] aattaaccct cactaaaggg ctgagtctca aaaccgcaat aactggttgt atggtcgaat 60

[0116] aagttaa 67

[0117] SEQ ID No. 2:

[0118] aattaaccct cactaaaggg ctgagtcgaa taagttaa 38

[0119] The above description of the embodiments is provided to enable those skilled in the art to understand and use the invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the above embodiments, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the invention should be within the protection scope of the present invention.

Claims

1. A method for fabricating an ion-gated transistor, characterized in that, The method includes the following steps: S1: Transistors are fabricated using multilayer photolithography technology; S2: The gate of the transistor is modified with an aptamer with a thiol end group; wherein the aptamer is an aptamer corresponding to a virus associated with respiratory infectious diseases; S3: An ion-gel dielectric layer (5) is formed on the modified transistor to obtain an ion-gated transistor, including: S3-1: Water is mixed with dimethyl sulfoxide and a heat-soluble polymer to obtain a first reaction solution; the heat-soluble polymer is polyvinyl alcohol; S3-2: Under closed conditions, the first reaction solution is stirred and heated at 80~90℃ for 1.5~2h, then an ionic solution is added, and the reaction is continued to be stirred for 30~45min to obtain the second reaction solution; the ionic solution is 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide; S3-3: The second reaction solution is 3D printed onto the modified transistor, and after multiple freezing cycles, an ion gel dielectric layer (5) is formed, and an ion-gated transistor is obtained.

2. The method for fabricating an ion-gated transistor according to claim 1, characterized in that, Step S1 includes: S1-1: A chromium layer (2) and a gold layer (3) are sequentially deposited on a flexible substrate (1) by ultraviolet lithography and thermal evaporation to form the source, drain and gate. The thickness of the chromium layer (2) is 5~10nm, the thickness of the gold layer (3) is 50~100nm, and the flexible substrate (1) is polyethylene terephthalate. S1-2: The channel layer (4) of the device was prepared by secondary photolithography and spin coating of poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate, and the transistor was obtained. The thickness of the channel layer (4) is 300~350nm; the spin coating speed is 1000~1500 rpm.

3. The method for fabricating an ion-gated transistor according to claim 1, characterized in that, Step S2 includes: S2-1: Prepare an aptamer solution, mix it with a tris(2-carboxyethyl)phosphine solution, and allow it to stand for activation; S2-2: The activated mixed solution is dropped onto the gate of the transistor, then incubated at room temperature for 18-24 hours, then soaked in BSA solution, and finally washed and dried to obtain the modified transistor.

4. The method for fabricating an ion-gated transistor according to claim 3, characterized in that, In step S2-1, the aptamer solution includes at least one of SARS-CoV-2 aptamer, H1N1 aptamer, and H5N1 aptamer, with a solution concentration of 20-25 μM and PBS buffer as the solvent. The concentration of the tri(2-carboxyethyl)phosphine solution is 10~15mM; The mixing volume ratio of the aptamer solution to the tris(2-carboxyethyl)phosphine solution is 98:2 to 99:1; During the static activation process, the activation temperature is room temperature and the activation time is 1~1.5h.

5. The method for fabricating an ion-gated transistor according to claim 3, characterized in that, In step S2-2, the concentration of the BSA solution is 0.1~1 mg / mL, and the treatment time is 1~1.5 h; The washing process used PBS buffer as the detergent; the drying process included drying with nitrogen gas.

6. The method for fabricating an ion-gated transistor according to claim 1, characterized in that, The mass ratio of water, dimethyl sulfoxide, thermosoluble polymer, and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide is (3.2~3.8):(0.8~1.2):(0.6~1.0):(1.25~1.35). In step S3-3, during the 3D printing process, the printing temperature is 40-48℃ and the printing layer thickness is 0.8-1.5mm; The multiple freezing process includes: first freezing at -20℃ to -40℃ for 30 to 60 minutes, then taking it out and letting it stand at room temperature for 30 to 60 minutes, and then freezing at -20℃ to -40℃ for 30 to 60 minutes, and repeating this cycle.

7. A mask sensing device integrating an ion-gated transistor, characterized in that, The mask sensing device includes a mask body, a breathing valve (6) disposed on the mask body, and an ion-gated transistor (9) disposed in the breathing valve (6). The ion-gated transistor is fabricated using the method described in any one of claims 1 to 6.

8. A mask sensing device with integrated ion-gated transistors according to claim 7, characterized in that, The ion-gated transistor is also electrically connected to the wireless transmission module; The breathing valve includes an upper breathing valve body (601) and a lower breathing valve body (602), and the detection part of the ion-gated transistor (9) is sandwiched between the upper breathing valve body (601) and the lower breathing valve body (602). The upper breathing valve body (601) has an air inlet chamber (603) on one side corresponding to the detection part of the ion-gated transistor (9), and multiple air inlet pipes (604) connected to the air inlet chamber (603) on the other side; the lower breathing valve body (602) has multiple air outlet branch pipes (605) arranged in parallel on one side corresponding to the detection part, and multiple air outlet main pipes (606) connected to the air outlet branch pipes (605) on the other side.

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