A high-side drive circuit for a MOSFET

Abstract

The application discloses a high-side driving circuit of a MOS tube and relates to the technical field of battery charging and discharging control. The driving circuit comprises an MCU, a first energy storage module, a second energy storage module, a switch control module, a MOS tube Q1 and a MOS tube Q2. The MCU is connected with the first energy storage module, the second energy storage module and the switch control module. The first energy storage module is connected with a positive electrode port of a battery and the second energy storage module. The switch control module is connected with the second energy storage module, a gate of the MOS tube Q1 and a gate of the MOS tube Q2. A drain of the MOS tube Q1 is connected with the positive electrode port of the battery, and a source of the MOS tube Q1 is connected with a source of the MOS tube Q2. A drain of the MOS tube Q2 is connected with a battery charging and discharging port. The MCU is used for controlling the turn-on and turn-off of the MOS tube Q1 and the MOS tube Q2. The application realizes efficient control of the MOS tube.

Description

Technical Field

[0001] This invention relates to the field of battery charging and discharging control technology, and in particular to a high-side drive circuit for a MOSFET. Background Technology

[0002] In existing technologies, the high-side driver chip BQ76200 is generally used in battery management systems to drive the high-side MOSFETs to conduct, thereby connecting the battery positive terminal to the battery charge / discharge port to realize the battery charge / discharge operation. However, when using the high-side driver chip BQ76200, not only is a large number of MOSFETs required, but the chip also has low driving efficiency for turning the MOSFETs on and off, and the turn-off delay of the MOSFETs is long, which can easily lead to a very high power demand for the MOSFETs and cause damage. Summary of the Invention

[0003] In order to improve the driving efficiency of MOSFET turn-on and turn-off and reduce the number of MOSFETs used, and to achieve efficient control of battery charging and discharging, this application provides a high-side driving circuit for MOSFETs.

[0004] This application provides a high-side drive circuit for MOSFETs, which adopts the following technical solution: the drive circuit includes an MCU, a first energy storage module, a second energy storage module, a switch control module, MOSFET Q1, and MOSFET Q2;

[0005] The MCU is connected to the first energy storage module, the second energy storage module, and the switch control module, respectively; the first energy storage module is connected to the positive terminal of the battery and the second energy storage module, respectively; the switch control module is connected to the second energy storage module, the gate of MOSFET Q1, and the gate of MOSFET Q2, respectively; the drain of MOSFET Q1 is connected to the positive terminal of the battery, and the source of MOSFET Q1 is connected to the source of MOSFET Q2; the drain of MOSFET Q2 is connected to the battery charging / discharging port.

[0006] The MCU is used to control the on and off states of MOSFETs Q1 and Q2.

[0007] By adopting the above technical solution, the MCU controls the high-side drive circuit. The high-side drive circuit is powered directly by battery energy. After the voltage is amplified by the first energy storage module and the second energy storage module, a higher drive voltage is generated. This voltage is then used by the switch control module to turn on the MOSFET, improving the drive efficiency of the MOSFET. In addition, the switch control module can discharge the charge of the MOSFET gate-source capacitor, enabling the rapid turn-off of MOSFETs Q1 and Q2, shortening the turn-off delay of the MOSFET, avoiding damage to the MOSFET, and using fewer MOSFETs, thus reducing costs and achieving efficient control of battery charging and discharging.

[0008] In one specific implementation scheme, the MCU controls the conduction of MOSFETs Q1 and Q2, specifically including:

[0009] The MCU controls the first energy storage module to turn on, and battery power charges the first energy storage module through the battery's positive terminal; the MCU detects the voltage value V at the output terminal of the first energy storage module. f And when the voltage value V f Reaching the first preset voltage V drive1 At this time, the MCU controls the second energy storage module to turn on, causing the first energy storage module to charge the second energy storage module; the MCU detects the voltage value V at the output terminal of the second energy storage module. s And when the voltage value V s Reaching the second preset voltage V drive2 When the MCU controls the switch control module to turn on, the switch control module drives MOSFET Q1 and MOSFET Q2 to conduct according to the electrical energy output by the second energy storage module, so as to realize the connection between the positive terminal of the battery and the charging and discharging port of the battery.

[0010] The MCU controls the turn-off of MOSFETs Q1 and Q2, specifically including:

[0011] When the MCU controls the switch control module to turn off, the switch control module automatically discharges the charge of the gate-source capacitors of MOSFET Q1 and MOSFET Q2, thereby turning off MOSFETs Q1 and Q2 and disconnecting the battery positive terminal from the battery charging / discharging port.

[0012] By adopting the above technical solution, when MOSFETs Q1 and Q2 need to be turned on to control the battery charging and discharging operation, the battery's electrical energy is first used by the first energy storage module in the front stage to charge itself. When charging is complete, the output voltage reaches the first preset voltage V. drive1 Then, the first energy storage module charges the second energy storage module; when the second energy storage module is fully charged, the output voltage reaches the second preset voltage V. drive2 When a high driving voltage is generated, the two MOSFETs are turned on through the switch control module. When it is necessary to turn off MOSFETs Q1 and Q2 and control the battery to stop charging and discharging, the MCU controls the switch control module to turn off, cutting off the voltage input to the gates of the two MOSFETs. At the same time, the switch control module automatically discharges the charge of the gate-source capacitors of the MOSFETs, realizing the rapid turn-off of MOSFETs Q1 and Q2 and achieving efficient control of battery charging and discharging.

[0013] In one specific implementation scheme, the MCU is used to control the alternating charging of the first energy storage module and the second energy storage module, specifically including:

[0014] MCU detects the output voltage value V of the first energy storage module f And when the voltage value Vf Below the third preset voltage V drive3 At this time, the MCU controls the second energy storage module to shut down, causing the first energy storage module to stop charging the second energy storage module, and controls the first energy storage module to turn on, so that the battery energy can charge the first energy storage module through the battery positive terminal.

[0015] MCU detects the output voltage value V of the second energy storage module s And when the voltage value V s Below the fourth preset voltage V drive4 At this time, the MCU controls the first energy storage module to shut down, so that the first energy storage module stops receiving battery power, and controls the second energy storage module to turn on, so that the first energy storage module charges the second energy storage module.

[0016] By adopting the above technical solution, the energy storage part of the drive circuit is divided into a first energy storage module in the front stage and a second energy storage module in the back stage, and the charging is controlled to alternate. The second energy storage module in the back stage can maintain a high voltage to drive the MOSFET. The first energy storage module in the front stage absorbs and stores electrical energy from the battery to provide energy for the second energy storage module in the back stage.

[0017] In one specific implementation, the first energy storage module includes diode D8, capacitor C4, transistor Q6, transistor Q7, resistor R13, resistor R14, resistor R15, and resistor R16.

[0018] The anode of diode D8 is connected to the positive terminal of the battery; the cathode of diode D8 is connected to the anode of capacitor C4 and the second energy storage module; the cathode of capacitor C4 is connected to the second energy storage module, and the cathode of capacitor C4 is also connected to the collector of transistor Q6 and the collector of transistor Q7 through a series resistor R13; the emitter of transistor Q7 is connected to the first terminal of resistor R14 and the negative terminal of the battery; the base of transistor Q7 is connected to the second terminal of resistor R14 and the first terminal of resistor R15; the second terminal of resistor R15 is connected to the base of transistor Q6 and the first terminal of resistor R16; the second terminal of resistor R16 is connected to the MCU.

[0019] By adopting the above technical solution, diode D8 prevents current backflow, and capacitor C4 stores and releases electrical energy.

[0020] In one specific implementation, the second energy storage module includes diode D11, diode D17, capacitor C5, transistor Q8, transistor Q9, transistor Q10, resistor R17, resistor R18, resistor R19, resistor R20, resistor R21, and resistor R22.

[0021] The anode of diode D17 is connected to the first energy storage module; the cathode of diode D17 is connected to the anode of capacitor C5 and the switch control module; the cathode of capacitor C5 is connected to the first terminal of resistor R17; the second terminal of resistor R17 is connected to the emitter of transistor Q8 and the first terminal of resistor R18; the collector of transistor Q8 is connected to the anode of diode D11 and the collector of transistor Q9; the cathode of diode D11 is connected to the first energy storage module; the base of transistor Q8 is connected to the... The emitter of transistor Q9 is connected to the second terminal of resistor R18 and the first terminal of resistor R19; the base of transistor Q9 is connected to the second terminal of resistor R19 and the first terminal of resistor R20; the second terminal of resistor R20 is connected to the collector of transistor Q10; the emitter of transistor Q10 is connected to the first terminal of resistor R21; the second terminal of resistor R21 is connected to the negative terminal of the battery and the first terminal of resistor R22; the second terminal of resistor R22 is connected to the base of transistor Q10 and the MCU.

[0022] By adopting the above technical solution, diode D17 prevents reverse current flow, and capacitor C5 stores and releases electrical energy.

[0023] In one specific implementation, the switch control module includes transistors Q11, Q12, Q13, Q14, and Q15; resistors R30, R31, R32, R34, R35, R36, R37, R38, R39, R40, and R41; diode D13; and capacitor C11.

[0024] The emitter of transistor Q11 is connected to the second energy storage module and the first terminal of resistor R30; the base of transistor Q11 is connected to the second terminal of resistor R30, the emitter of transistor Q12, and the first terminal of resistor R31; the collector of transistor Q12 is connected to the collector of transistor Q11, the first terminal of resistor R36, the first terminal of resistor R39, and the base of transistor Q15; the base of transistor Q12 is connected to the second terminal of resistor R31 and the first terminal of resistor R32; the second terminal of resistor R32 is connected to the collector of transistor Q13; the emitter of transistor Q13 is connected to the first terminal of resistor R35; the second terminal of resistor R35 is connected to the first terminal of resistor R34 and the negative terminal of the battery; the second terminal of resistor R34 is connected to the MCU.

[0025] The second terminal of resistor R36 is connected to the anode of diode D13; the cathode of diode D13 is connected to the first terminals of resistors R40, R41, R37, and R38, and the anode of capacitor C11; the cathode of capacitor C11 is connected to the source of MOSFET Q15 and the source of MOSFET Q2; the second terminal of resistor R38 is connected to the collector of transistors Q14 and Q15, and the second terminal of resistor R39; the second terminal of resistor R40 is connected to the gate of MOSFET Q15; and the second terminal of resistor R41 is connected to the gate of MOSFET Q2.

[0026] By adopting the above technical solution, diode D13 prevents reverse current flow, and the charge of the gate-source capacitors of MOSFET Q1 and MOSFET Q2 is discharged by the switch control module 4, thereby realizing the rapid turn-off of MOSFETs Q1 and Q2.

[0027] In one specific implementation scheme, the high-side drive circuit further includes a sleep control module, which is connected to the MCU, the battery positive terminal, and the first energy storage module respectively; the sleep control module includes transistors Q3, Q4, and Q5, resistors R7, R8, R9, R10, and R11.

[0028] The emitter of transistor Q3 is connected to the positive terminal of the battery and the first terminal of resistor R7. The collector of transistor Q3 is connected to the first energy storage module and the collector of transistor Q4. The emitter of transistor Q4 is connected to the base of transistor Q3, the second terminal of resistor R7, and the first terminal of resistor R8. The second terminal of resistor R8 is connected to the base of transistor Q4 and the first terminal of resistor R9. The second terminal of resistor R9 is connected to the collector of transistor Q5. The emitter of transistor Q5 is connected to the first terminal of resistor R10. The second terminal of resistor R10 is connected to the first terminal of resistor R11 and the negative terminal of the battery. The second terminal of resistor R11 is connected to the base of transistor Q5 and the MCU.

[0029] By adopting the above technical solution, when it is not necessary to control the MOSFET to turn on and off, the hibernation control module cuts off the power input from the battery to the entire drive circuit, and the drive circuit enters a low-power mode to avoid energy waste.

[0030] In one specific implementation, the high-side drive circuit further includes a battery positive voltage detection module; the battery positive voltage detection module is connected to the MCU, the battery positive port, and the battery negative port respectively; the battery positive voltage detection module includes resistors R1, R2, and R3, and capacitor C1; the battery positive port is connected to the battery negative port through resistors R1, R2, and R3 connected in series, and capacitor C1 is connected in parallel across resistor R3;

[0031] The first energy storage module also includes resistors R42, R43, and R44, and capacitor C7; the negative terminal of capacitor C4 is connected to the negative terminal of the battery through resistors R42, R43, and R44 connected in series; capacitor C7 is connected in parallel across resistor R44.

[0032] The MCU determines the negative terminal voltage of capacitor C4 by detecting the voltage between resistors R43 and R44; the MCU determines the positive terminal voltage of capacitor C4 by detecting the voltage between resistors R2 and R3; and the MCU determines the output voltage V of the first energy storage module based on the positive and negative terminal voltages of capacitor C4. f .

[0033] In one specific implementation, the second energy storage module further includes resistors R24, R25, R26, R27, R28, and R29, and capacitors C9 and C8.

[0034] The negative terminal of capacitor C5 is connected to the negative terminal of the battery through resistors R27, R28, and R29 connected in series; capacitor C9 is connected in parallel across resistor R29; the positive terminal of capacitor C5 is connected to the negative terminal of the battery through resistors R24, R25, and R26 connected in series; capacitor C8 is connected in parallel across resistor R26.

[0035] The MCU determines the negative voltage of capacitor C5 by detecting the voltage between resistors R28 and R29; the MCU determines the positive voltage of capacitor C5 by detecting the voltage between resistors R25 and R26; and the MCU determines the output voltage V of the second energy storage module based on the positive and negative voltages of capacitor C5. s .

[0036] In one specific implementation, the high-side drive circuit further includes a battery charge / discharge voltage detection module, which is connected to the MCU, the battery negative terminal, and the drain of the battery charge / discharge port. The battery charge / discharge voltage detection module includes resistors R4, R5, and R6, and capacitor C2. The battery charge / discharge port is connected to the battery charge / discharge port through resistors R4, R5, and R6 connected in series. Capacitor C2 is connected in parallel across resistor R6.

[0037] The MCU determines the voltage value of the battery charging and discharging port by detecting the voltage value between resistors R6 and R5.

[0038] By adopting the above technical solution, MCU1 can determine the voltage value of the battery charging and discharging port by detecting the voltage value between resistor R6 and resistor R5, which facilitates the judgment of the battery charging and discharging status.

[0039] In summary, the technical solution of this application includes at least the following beneficial technical effects:

[0040] 1. The high-side drive circuit is controlled by the MCU. The high-side drive circuit is powered directly by battery power. After the voltage is amplified by the first energy storage module and the second energy storage module, a higher drive voltage is generated. The switch control module turns on the MOSFET, which improves the driving efficiency of the MOSFET. In addition, the switch control module can discharge the charge of the gate-source capacitor of the MOSFET, realize the rapid turn-off of MOSFETs Q1 and Q2, shorten the turn-off delay of the MOSFET, avoid damage to the MOSFET, and use fewer MOSFETs, which reduces the cost and achieves efficient control of battery charging and discharging.

[0041] 2. The energy storage section of the high-side drive circuit is divided into a first energy storage module in the front stage and a second energy storage module in the back stage, and the charging is controlled to alternate. The first energy storage module in the front stage absorbs and stores electrical energy from the battery, and provides energy for the second energy storage module in the back stage. The second energy storage module in the back stage maintains high voltage, thereby driving the MOSFET to conduct continuously. Attached Figure Description

[0042] Figure 1 This is a partial circuit diagram of the high-side drive circuit of the MOS transistor in an embodiment of this application;

[0043] Figure 2 This is an overall circuit diagram of the high-side drive circuit of the MOS transistor in the embodiments of this application;

[0044] Figure 3 This is a specific circuit diagram of the high-side drive circuit of the MOS transistor in the embodiments of this application.

[0045] Explanation of reference numerals in the attached figures:

[0046] 1. MCU; 2. First energy storage module; 3. Second energy storage module; 4. Switch control module; 5. Sleep control module; 6. Battery positive voltage detection module; 7. Battery charge / discharge voltage detection module. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be further described in detail below with reference to the accompanying drawings.

[0048] This application discloses a high-side drive circuit for a MOSFET, referring to... Figure 1 The driving circuit is connected to the positive terminal of the battery and the charging / discharging port of the battery, respectively; the driving circuit includes MCU1, first energy storage module 2, second energy storage module 3, switch control module 4, MOSFET Q1, and MOSFET Q2;

[0049] MCU1 is connected to the first energy storage module 2, the second energy storage module 3, and the switch control module 4 respectively; the first energy storage module 2 is connected to the positive terminal of the battery and the second energy storage module 3 respectively; the switch control module 4 is connected to the second energy storage module 3, the gate of MOSFET Q1, and the gate of MOSFET Q2 respectively; the drain of MOSFET Q1 is connected to the positive terminal of the battery, and the source of MOSFET Q1 is connected to the source of MOSFET Q2; the drain of MOSFET Q2 is connected to the battery charging / discharging port.

[0050] MCU1 is used to control the on and off states of MOSFETs Q1 and Q2.

[0051] Therefore, through the connection of the above modules, the MCU controls the high-side drive circuit. By directly using battery power to supply power to the high-side drive circuit, the voltage is amplified by the first energy storage module and the second energy storage module to generate a higher drive voltage. This voltage is then used by the switch control module to turn on the MOSFET, improving the drive efficiency of the MOSFET. In addition, the switch control module can discharge the charge of the MOSFET's gate-source capacitor, enabling the rapid turn-off of MOSFETs Q1 and Q2, shortening the turn-off delay of the MOSFET, avoiding damage to the MOSFET, and using fewer MOSFETs, thus reducing costs and achieving efficient control of battery charging and discharging.

[0052] Furthermore, the MCU1 controls the conduction of MOSFETs Q1 and Q2, specifically including:

[0053] MCU1 controls the first energy storage module 2 to turn on, and battery power charges the first energy storage module 2 through the positive terminal of the battery; MCU1 detects the voltage value V at the output terminal of the first energy storage module 2. f And when the voltage value V f Reaching the first preset voltage V drive1 At this time, MCU1 controls the second energy storage module 3 to turn on, causing the first energy storage module 2 to charge the second energy storage module 3; MCU1 detects the voltage value V at the output terminal of the second energy storage module 3. s And when the voltage value V s Reaching the second preset voltage V drive2 When the MCU1 controls the switch control module 4 to turn on, the switch control module 4 drives MOSFET Q1 and MOSFET Q2 to conduct according to the electrical energy output by the second energy storage module 3, so as to realize the connection between the positive terminal of the battery and the charging and discharging port of the battery.

[0054] The MCU1 controls the turn-off of MOSFETs Q1 and Q2, specifically including:

[0055] MCU1 controls the switch control module 4 to turn off. The switch control module 4 automatically discharges the charge of the gate-source capacitors of MOSFET Q1 and MOSFET Q2, thereby turning off MOSFET Q1 and MOSFET Q2 and disconnecting the battery positive terminal from the battery charging / discharging port.

[0056] In this context, the gate-source capacitance of MOSFET Q1 is the parasitic gate-source capacitance of MOSFET Q1, and the gate-source capacitance of MOSFET Q2 is the parasitic gate-source capacitance of MOSFET Q2. Both MOSFET Q1 and MOSFET Q2 are NMOS transistors.

[0057] Among them, a first preset voltage V can be set. drive1 Second preset voltage V drive2 Equal, first preset voltage V drive1 Second preset voltage V drive2 The specific value can be set by those skilled in the art based on the characteristics of the gate drive voltages of MOSFETs Q1 and Q2. For example, the first preset voltage V... drive1 The value can be determined based on the voltage value V. f Reaching the first preset voltage V drive1 At that time, it can be set to charge the second energy storage module 3 in the subsequent stage; the second preset voltage V drive2 The value can be determined based on the voltage value V. s Reaching the second preset voltage V drive2 At that time, it can drive the conduction of MOSFETs Q1 and Q2 to be set.

[0058] When the MCU detects that the external environment and battery conditions are normal, it needs to turn on MOSFETs Q1 and Q2 to control the battery charging and discharging operation. However, because the battery voltage is low, it cannot directly drive the two MOSFETs to turn on. Therefore, it first uses the battery's power to charge itself through the first energy storage module in the front stage. After charging is complete, the output voltage reaches the first preset voltage V. drive1 Then, the first energy storage module charges the second energy storage module; when the second energy storage module is fully charged, the output voltage reaches the second preset voltage V. drive2 When the battery is in a high-temperature, high-current, high-voltage state, or low-temperature, low-voltage state, a higher driving voltage is generated to drive the two MOSFETs to conduct. When the MCU detects that the battery is in a state of over-temperature, over-current, over-voltage, low-temperature, or low-voltage state, the battery needs to stop working, which means that MOSFETs Q1 and Q2 need to be turned off to control the battery to stop charging and discharging. At this time, the MCU controls the switch control module to turn off, cutting off the voltage input to the gates of the two MOSFETs. At the same time, the switch control module automatically discharges the charge of the gate-source capacitors of the MOSFETs, realizing the rapid turn-off of MOSFETs Q1 and Q2, and achieving efficient control of battery charging and discharging.

[0059] Furthermore, MCU1 is used to control the alternating charging of the first energy storage module 2 and the second energy storage module 3, specifically including:

[0060] MCU1 detects the voltage value V at the output terminal of the first energy storage module 2. f And when the voltage value V f Below the third preset voltage V drive3 At this time, MCU1 controls the second energy storage module 3 to turn off, so that the first energy storage module 2 stops charging the second energy storage module 3, and controls the first energy storage module 2 to turn on, so that the battery energy charges the first energy storage module 2 through the battery positive terminal.

[0061] MCU1 detects the voltage value V at the output terminal of the second energy storage module 3. s And when the voltage value V s Below the fourth preset voltage V drive4 At this time, MCU1 controls the first energy storage module 2 to turn off, so that the first energy storage module 2 stops receiving battery power, that is, the first energy storage module 2 stops charging itself, and controls the second energy storage module 3 to turn on, so that the first energy storage module 2 charges the second energy storage module 3.

[0062] Among them, a third preset voltage V can be set. drive3 and the fourth preset voltage V drive4 Equal, third preset voltage V drive3 and the fourth preset voltage V drive4 The specific value can be set by those skilled in the art based on the characteristics of the gate drive voltages of MOSFETs Q1 and Q2. For example, the third preset voltage V... drive3 The value can be determined based on the voltage value V. f Below the third preset voltage V drive3 At that time, it is impossible to set the charging of the second energy storage module 3 in the subsequent stage; the fourth preset voltage V drive4 The value can be determined based on the voltage value V. s Below the fourth preset voltage V drive4 At that time, it is impossible to drive the MOSFETs Q1 and Q2 to conduct for setting.

[0063] Because in the MOS conduction state, the output of the switching control module needs to have a continuous high power output in order to continuously drive the two MOS transistors to conduct, but after the battery power charges the first energy storage module, the power of the first energy storage module is not infinite. The power of the first energy storage module also needs to be transferred to the second energy storage module. When the power stored in the first energy storage module is sufficient, the voltage stored in the first energy storage module is higher than the battery voltage. At this time, the battery naturally cannot directly transfer charge to the first energy storage module.

[0064] Therefore, the energy storage section of the high-side drive circuit is divided into a first-stage energy storage module and a second-stage energy storage module, and their charging is controlled to alternate. The second-stage energy storage module can maintain a high voltage to drive the MOSFET. The first-stage energy storage module absorbs and stores electrical energy from the battery, providing energy for the second-stage energy storage module. Furthermore, the first-stage energy storage module can have periods of lower voltage, i.e., when the output voltage V of the first-stage energy storage module is... f Below the third preset voltage V drive3 When the first and second energy storage modules are disconnected, the battery is allowed to supply charge to the first energy storage module, charging it and raising its voltage. Meanwhile, when the output voltage V of the second energy storage module in the subsequent stage... s Below the fourth preset voltage V drive4 When the voltage drops too low, the first energy storage module and the positive terminal of the battery are disconnected, and the first energy storage module is controlled to supply charge to the second energy storage module, ensuring that the output voltage of the second energy storage module can continuously drive the MOSFETs Q1 and Q2 to conduct. When the output voltage of the first energy storage module in the current stage drops too low again, the first and second energy storage modules are disconnected again to charge the first energy storage module. This process is repeated continuously to ensure that the drive circuit can continuously drive the MOSFETs to conduct.

[0065] Furthermore, referring to Figure 2 The drive circuit also includes a sleep control module 5; the sleep control module 5 is connected to the MCU1, the battery positive terminal, and the first energy storage module 2 respectively; the MCU1 is also used to control the sleep control module 5 to turn off, cut off the path of battery power to charge the first energy storage module 2, and make the drive circuit enter sleep mode.

[0066] Therefore, when it is not necessary to control the MOSFET to turn on and off, the sleep control module cuts off the power input of the entire drive circuit, and the drive circuit enters a low-power mode to avoid energy waste.

[0067] Furthermore, referring to Figure 2 The driving circuit also includes a battery positive voltage detection module 6 and a battery charge / discharge voltage detection module 7. The battery positive voltage detection module 6 is connected to the MCU1, the battery positive port, and the battery negative port, respectively. The battery charge / discharge voltage detection module 7 is connected to the battery charge / discharge port and the battery negative port, respectively.

[0068] MCU1 detects the voltage value at the positive terminal of the battery through the positive terminal voltage detection module 6, and detects the voltage value at the charging and discharging port of the battery through the charging and discharging voltage detection module 7. Based on the voltage values ​​at the positive terminal of the battery and the charging and discharging port, MCU1 determines whether the charging and discharging status of the battery is normal.

[0069] Furthermore, referring to Figure 3 This is a specific implementation of the high-side drive circuit in this application:

[0070] The first energy storage module 2 includes a diode D8, a capacitor C4, a transistor Q6, a transistor Q7, a resistor R13, a resistor R16, a resistor R15, and a resistor R14; the first energy storage module 2 is connected to the positive terminal of the battery, the negative terminal of the battery, MCU1, and the second energy storage module 3, respectively.

[0071] Specifically, the anode of diode D8 is connected to the positive terminal of the battery; the cathode of diode D8 is connected to the anode of capacitor C4 and the second energy storage module 3; the cathode of capacitor C4 is connected to the second energy storage module 3, and the cathode of capacitor C4 is also connected to the collectors of transistors Q6 and Q7 through a series resistor R13; the emitter of transistor Q7 is connected to the first terminal of resistor R14 and the negative terminal of the battery; the base of transistor Q7 is connected to the second terminal of resistor R14 and the first terminal of resistor R15; the second terminal of resistor R15 is connected to the base of transistor Q6 and the first terminal of resistor R16; the second terminal of resistor R16 is connected to MCU1. Specifically, the second terminal of resistor R16 is connected to the MCU_P3.3 pin of MCU1.

[0072] In this circuit, diode D8 prevents reverse current flow. When MCU1 outputs a high level through the MCU_P3.3 pin, transistors Q6 and Q7 conduct, thus enabling the first energy storage module 2. Battery energy charges capacitor C4 through the positive terminal of the battery, and capacitor C4 stores the energy. When MCU1 outputs a low level through the MCU_P3.3 pin, transistors Q6 and Q7 turn off, thus turning off the first energy storage module 2. This stops the first energy storage module 2 from receiving battery energy and from charging itself. In this circuit, capacitor C4 is responsible for both energy storage and release. The output voltage V of the first energy storage module 2 can be obtained from the voltage across capacitor C4. f .

[0073] The first energy storage module 2 may further include resistors R42, R43, and R44, capacitor C7, and Zener diode D18; wherein, the negative terminal of capacitor C4 is connected to the negative terminal of the battery through resistors R42, R43, and R44 connected in series; capacitor C7 is connected in parallel across resistor R44; the positive terminal of Zener diode D18 is connected to the negative terminal of capacitor C4, the negative terminal of diode D8, and the second energy storage module 3; the negative terminal of Zener diode D18 is connected to the positive terminal of capacitor C4 and the second energy storage module 3.

[0074] The battery positive voltage detection module 6 includes resistors R1, R2, R3, and capacitor C1; the battery positive port is connected to the battery negative port through resistors R1, R2, and R3 connected in series, and capacitor C1 is connected in parallel across resistor R3.

[0075] Through the above circuit, on the one hand, the MCU1 determines the negative terminal voltage of capacitor C4 by detecting the voltage between resistors R43 and R44; on the other hand, the MCU1 determines the positive terminal voltage of capacitor C4 by detecting the voltage between resistors R2 and R3 in the battery positive terminal voltage detection module 6; based on the positive and negative terminal voltages of capacitor C4, the MCU1 determines the output voltage V of the first energy storage module 2. f .

[0076] On the other hand, when the first energy storage module 2 is turned off, the electrical energy at the positive terminal of the battery stops charging capacitor C4. However, the circuit formed by resistors R42, R112, and R44 with capacitor C4 can continue to charge capacitor C4, and the Zener diode D18 limits the maximum voltage value of capacitor C4 to prevent overcharging. For example, when the first energy storage module 2 is turned off, the voltage value of capacitor C4 can reach 15V, but the circuit formed by resistors R42, R112, and R44 with capacitor C4 can continue to charge capacitor C4, and the Zener diode D18 limits the maximum voltage value of capacitor C4 to 20V.

[0077] Furthermore, the second energy storage module 3 includes diode D17, diode D11, capacitor C5, transistor Q8, transistor Q10, transistor Q9, resistor R17, resistor R18, resistor R19, resistor R20, resistor R22, and resistor R21; the second energy storage module 3 is connected to the first energy storage module 2, the battery negative terminal, MCU1, and switch control module 4 respectively;

[0078] Specifically, the anode of diode D17 is connected to the first energy storage module 2; the cathode of diode D17 is connected to the anode of capacitor C5 and the switch control module 4; the cathode of capacitor C5 is connected to the first terminal of resistor R17; the second terminal of resistor R17 is connected to the emitter of transistor Q8 and the first terminal of resistor R18; the collector of transistor Q8 is connected to the anode of diode D11 and the collector of transistor Q9; the cathode of diode D11 is connected to the first energy storage module 2; and the base of transistor Q8 is connected to the anode of diode D11 and the collector of transistor Q9. Do not connect the emitter of transistor Q9, the second terminal of resistor R18, or the first terminal of resistor R19; connect the base of transistor Q9 to the second terminal of resistor R19 and the first terminal of resistor R20; connect the second terminal of resistor R20 to the collector of transistor Q10; connect the emitter of transistor Q10 to the first terminal of resistor R21; connect the second terminal of resistor R21 to the negative terminal of the battery and the first terminal of resistor R22; connect the second terminal of resistor R22 to the base of transistor Q10 and MCU1. Specifically, connect the second terminal of resistor R22 to the base of transistor Q10 and the MCUP_3.2 pin of MCU1.

[0079] In this circuit, diode D17 prevents reverse current flow. When MCU1 outputs a high level through the MCU_P3.2 pin, transistors Q10, Q9, and Q8 are turned on, thereby enabling the second energy storage module 3 to start. This allows the energy in capacitor C4 to charge capacitor C5, which stores the energy. In other words, the first energy storage module 2 charges the second energy storage module 3. When MCU1 outputs a low level through the MCU_P3.2 pin, transistors Q10, Q9, and Q8 are turned off, thereby turning off the second energy storage module 3. This stops the energy in capacitor C4 from charging capacitor C5, meaning the first energy storage module 2 stops charging the second energy storage module 3. In this circuit, energy is stored and released through capacitor C5.

[0080] Furthermore, the second energy storage module 3 also includes a resistor R23 and a capacitor C6; the base of the transistor Q10 is connected to the MCUP_3.2 pin of the MCU1 through a series resistor R22, and the capacitor C6 is connected in parallel across the two ends of the resistor R23. The resistor R23 and the capacitor C6 are used to speed up the turn-on and turn-off speed of the transistor Q10.

[0081] Furthermore, the second energy storage module 3 also includes resistors R24, R25, R26, R27, R28, and R29, capacitor C9, Zener diode D12, and capacitor C8.

[0082] The negative terminal of capacitor C5 is connected to the negative terminal of the battery through resistors R27, R28, and R29 connected in series. Capacitor C9 is connected in parallel across resistor R29. The positive terminal of Zener diode D12 is connected to the negative terminal of capacitor C5 and the first terminal of resistor R17. The negative terminal of Zener diode D12 is connected to the positive terminal of capacitor C5, the negative terminal of diode D17, resistor R24, and switch control module 4.

[0083] The positive terminal of capacitor C5 is connected to the negative terminal of the battery through resistors R24, R25, and R26 connected in series; capacitor C8 is connected in parallel across resistor R26.

[0084] Through the above circuit, on the one hand, MCU1 determines the negative terminal voltage of capacitor C5 by detecting the voltage between resistors R28 and R29; on the other hand, MCU1 determines the positive terminal voltage of capacitor C5 by detecting the voltage between resistors R25 and R26; and based on the positive and negative terminal voltages of capacitor C5, MCU1 determines the output voltage V of the second energy storage module 3. s ;

[0085] On the other hand, when the second energy storage module 3 is turned off, the energy from capacitor C4 stops charging capacitor C5. However, the circuit formed by resistors R27, R28, R29, and capacitor C5 can continue to charge capacitor C5, and the Zener diode D12 limits the maximum voltage of capacitor C5 to prevent overcharging. For example, when the second energy storage module 3 is turned off, the voltage of capacitor C5 can reach 15V, but the circuit formed by resistors R27, R28, R29, and capacitor C5 can continue to charge capacitor C5, and the Zener diode D12 limits the maximum voltage of capacitor C5 to 20V.

[0086] Furthermore, referring to Figure 3 The switch control module 4 includes transistors Q11, Q12, and Q13, resistors R30, R31, R32, R35, R34, R36, R40, R41, R37, R38, and R39, a diode D13, a capacitor C11, and transistors Q14 and Q15. The switch control module 4 is connected to the second energy storage module 3, the battery negative terminal, MCU1, MOSFET Q1, and MOSFET Q2.

[0087] Specifically, the emitter of transistor Q11 is connected to the second energy storage module 3 and the first terminal of resistor R30; the base of transistor Q11 is connected to the second terminal of resistor R30, the emitter of transistor Q12, and the first terminal of resistor R31; the collector of transistor Q12 is connected to the collector of transistor Q11, the first terminal of resistor R36, the first terminal of resistor R39, and the base of transistor Q15; the base of transistor Q12 is connected to the second terminal of resistor R31 and the first terminal of resistor R32; the second terminal of resistor R32 is connected to the collector of transistor Q13; the emitter of transistor Q13 is connected to the first terminal of resistor R35; the second terminal of resistor R35 is connected to the first terminal of resistor R34 and the negative terminal of the battery; the second terminal of resistor R34 is connected to MCU1; specifically, the second terminal of resistor R34 is connected to the MCU_P3.5 pin of MCU1.

[0088] The second terminal of resistor R36 is connected to the anode of diode D13; the cathode of diode D13 is connected to the first terminals of resistors R40, R41, R37, and R38, and the anode of capacitor C11; the cathode of capacitor C11 is connected to the source of MOSFET Q15 and the source of MOSFET Q2; the second terminal of resistor R38 is connected to the collector of transistors Q14 and Q15, and the second terminal of resistor R39; the second terminal of resistor R40 is connected to the gate of MOSFET Q15; and the second terminal of resistor R41 is connected to the gate of MOSFET Q2.

[0089] In this circuit, diode D13 prevents reverse current flow. When MCU1 outputs a high level through the MCU_P3.5 pin, transistors Q13, Q12, and Q11 conduct, thereby turning on the switch control module 4. The energy released by capacitor C5 then passes through transistor Q11, resistor R36, diode D13, and resistor R40 to drive MOSFET Q1 to conduct. The energy released by capacitor C5 also passes through transistor Q11, resistor R36, diode D13, and resistor R41 to drive MOSFET Q2 to conduct. When MCU1 outputs a low level through the MCU_P3.5 pin, transistors Q11, Q12, and Q13 are turned off, thereby turning off the switch control module 4. Transistors Q14 and Q15 conduct, and the charge on the gate-source capacitors of MOSFETs Q1 and Q2 is discharged by the switch control module 4, achieving rapid turn-off of MOSFETs Q1 and Q2. Specifically, the charge on the gate-source capacitors of MOSFET Q1 and Q2 is discharged by capacitor C11.

[0090] Furthermore, the switch control module 4 also includes a resistor R33 and a capacitor C10. The base of the transistor Q13 is connected to the MCU_P3.5 pin of the MCU1 through the series resistor R33. The capacitor C10 is connected in parallel across the two ends of the resistor R33. The resistor R33 and the capacitor C10 are used to speed up the turn-on and turn-off speed of the transistor Q13.

[0091] Furthermore, the sleep control module 5 includes transistors Q3, Q4, and Q5, resistors R7, R8, R9, R11, and R10; the sleep control module 5 is connected to the positive terminal of the battery, the negative terminal of the battery, MCU1, and the first energy storage module 2, respectively.

[0092] Specifically, the emitter of transistor Q3 is connected to the positive terminal of the battery and the first end of resistor R7; the collector of transistor Q3 is connected to the first energy storage module 2 and the collector of transistor Q4; the emitter of transistor Q4 is connected to the base of transistor Q3, the second end of resistor R7, and the first end of resistor R8; the second end of resistor R8 is connected to the base of transistor Q4 and the first end of resistor R9; the second end of resistor R9 is connected to the collector of transistor Q5; the emitter of transistor Q5 is connected to the first end of resistor R10; the second end of resistor R10 is connected to the first end of resistor R11 and the negative terminal of the battery; the second end of resistor R11 is connected to the base of transistor Q5 and MCU1. Specifically, the second end of resistor R11 is connected to the base of transistor Q5 and the MCU_P3.1 pin of MCU1.

[0093] When MCU1 outputs a high level through the MCU_P3.1 pin, transistors Q5, Q4, and Q3 are turned on, thereby enabling the sleep control module 5. Battery energy charges the first energy storage module 2 through the positive terminal of the battery, i.e., the battery energy charges capacitor C4. When MCU1 outputs a low level through the MCU_P3.1 pin, transistors Q5, Q4, and Q3 are turned off, thereby turning off the sleep control module 5. This cuts off the path for battery energy to charge the first energy storage module 2 through the positive terminal of the battery, causing the drive circuit to enter sleep mode.

[0094] Furthermore, the sleep control module 5 also includes a resistor R12 and a capacitor C3. The base of the transistor Q5 is connected to the MCU_P3.1 pin of the MCU1 through the series resistor R12. The capacitor C3 is connected in parallel across the two ends of the resistor R12. The resistor R12 and the capacitor C3 are used to speed up the turn-on and turn-off speed of the transistor Q5.

[0095] Furthermore, the second energy storage module 3 also includes a diode D15; the positive terminal of diode D15 is connected to the source of MOSFET Q1 and the source of MOSFET Q2, and the negative terminal of diode D15 is connected to the positive terminal of diode D12, the negative terminal of capacitor C5, and the first end of resistor R15, respectively; when the switch control module 4 is turned off, the second energy storage module 3 can discharge the charge of the gate-source capacitors of MOSFET Q1 and MOSFET Q2, thereby further accelerating the turn-off speed of MOSFET Q1 and MOSFET Q2.

[0096] Reference Figure 3 Furthermore, the battery charge / discharge voltage detection module 7 includes resistors R4, R5, R6, and capacitor C2. The battery charge / discharge port is connected to the battery negative terminal port through resistors R4, R5, and R6 connected in series. The capacitor C2 is connected in parallel across resistor R6.

[0097] MCU1 detects the voltage between resistors R6 and R5 through its ADC-Charge pin to determine the voltage at the battery charging / discharging port. Additionally, MCU1 detects the voltage between resistors R2 and R3 through its ADC-BAT pin to determine the voltage at the battery's positive terminal. Based on the voltage values ​​at both the positive and negative terminals, MCU1 determines whether the battery's charging / discharging status is normal.

[0098] The above are all preferred embodiments of this application and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A high-side drive circuit for a MOSFET, characterized in that, The driving circuit comprises an MCU (1), a first energy storage module (2), a second energy storage module (3), a switch control module (4), a MOS tube Q1 and a MOS tube Q2. The MCU (1) is connected with the first energy storage module (2), the second energy storage module (3) and the switch control module (4) respectively; the first energy storage module (2) is connected with a battery positive electrode port and the second energy storage module (3); the switch control module (4) is connected with the second energy storage module (3), a gate of the MOS tube Q1 and a gate of the MOS tube Q2; a drain of the MOS tube Q1 is connected with the battery positive electrode port, a source of the MOS tube Q1 is connected with a source of the MOS tube Q2; a drain of the MOS tube Q2 is connected with a battery charging and discharging port. The MCU (1) is used for controlling the turn-on and turn-off of the MOS tube Q1 and the MOS tube Q2. The MCU (1) controls the turn-on of the MOS tube Q1 and the MOS tube Q2, and specifically comprises the following steps: The MCU (1) controls the first energy storage module (2) to turn on, and the battery energy charges the first energy storage module (2) through the positive terminal of the battery; the MCU (1) detects the voltage value V at the output terminal of the first energy storage module (2). f When the voltage value V f Reaching the first preset voltage V drive1 At this time, the MCU (1) controls the second energy storage module (3) to turn on, so that the first energy storage module (2) charges the second energy storage module (3); the MCU (1) detects the voltage value V at the output terminal of the second energy storage module (3). s When the voltage value V s Reaching the second preset voltage V drive2 When the MCU (1) controls the switch control module (4) to turn on, the switch control module (4) drives the MOS transistors Q1 and Q2 to conduct according to the electrical energy output by the second energy storage module (3), so as to realize the connection between the positive terminal of the battery and the charging and discharging port of the battery; The MCU (1) controls the turn-off of the MOS tube Q1 and the MOS tube Q2, and specifically comprises the following steps: The MCU (1) controls the switch control module (4) to be closed, and the switch control module (4) automatically bleeds the electric quantity of the gate-source capacitance of the MOS tube Q1 and the gate-source capacitance of the MOS tube Q2, so that the MOS tube Q1 and the MOS tube Q2 are turned off, and the battery positive electrode port is disconnected with the battery charging and discharging port. The first energy storage module (2) comprises a diode D8, a capacitor C4, a triode Q6, a triode Q7, a resistor R13, a resistor R14, a resistor R15 and a resistor R16. A positive electrode of the diode D8 is connected with the battery positive electrode port; a negative electrode of the diode D8 is connected with a positive electrode of the capacitor C4 and the second energy storage module (3) respectively; a negative electrode of the capacitor C4 is connected with the second energy storage module (3) respectively, and the negative electrode of the capacitor C4 is further connected with a collector of the triode Q6 and a collector of the triode Q7 through the resistor R13 in series; an emitter of the triode Q7 is connected with a first end of the resistor R14 and a battery negative electrode port respectively; a base of the triode Q7 is connected with a second end of the resistor R14 and a first end of the resistor R15 respectively; a second end of the resistor R15 is connected with a base of the triode Q6 and a first end of the resistor R16 respectively; and a second end of the resistor R16 is connected with the MCU (1).

2. The high-side driver circuit of the MOSFET according to claim 1, wherein: The MCU (1) is used for controlling the first energy storage module (2) and the second energy storage module (3) to charge alternately, and specifically comprises the following steps: MCU (1) detects the voltage value V of the output end of the first energy storage module (2) f , and when the voltage value V f is lower than the third preset voltage V drive3 , the MCU (1) controls the second energy storage module (3) to be closed, so that the first energy storage module (2) stops charging the second energy storage module (3), and controls the first energy storage module (2) to be opened, so that the battery electric energy charges the first energy storage module (2) through the positive electrode port of the battery. MCU (1) detects the voltage value V of the output end of the second energy storage module (3) s , and when the voltage value V s is lower than the fourth preset voltage V drive4 , the MCU (1) controls the first energy storage module (2) to be closed, so that the first energy storage module (2) stops receiving battery power, and controls the second energy storage module (3) to be opened, so that the first energy storage module (2) charges the second energy storage module (3).

3. The high-side driver circuit for a MOSFET according to claim 1, wherein: The second energy storage module (3) comprises a diode D11, a diode D17, a capacitor C5, a triode Q8, a triode Q9, a triode Q10, a resistor R17, a resistor R18, a resistor R19, a resistor R20, a resistor R21 and a resistor R22. The positive electrode of diode D17 is connected with the first energy storage module (2); the negative electrode of diode D17 is connected with the positive electrode of capacitor C5 and the switch control module (4) respectively; the negative electrode of capacitor C5 is connected with the first end of resistor R17 respectively; the second end of resistor R17 is connected with the emitter of triode Q8 and the first end of resistor R18 respectively; the collector of triode Q8 is connected with the positive electrode of diode D11 and the collector of triode Q9 respectively; the negative electrode of diode D11 is connected with the first energy storage module (2); the base of triode Q8 is connected with the emitter of triode Q9, the second end of resistor R18 and the first end of resistor R19 respectively; the base of triode Q9 is connected with the second end of resistor R19 and the first end of resistor R20 respectively; the second end of resistor R20 is connected with the collector of triode Q10; the emitter of triode Q10 is connected with the first end of resistor R21; the second end of resistor R21 is connected with the negative electrode port of the battery and the first end of resistor R22 respectively; the second end of resistor R22 is connected with the base of triode Q10 and the MCU (1) respectively.

4. The high-side driver circuit for a MOSFET according to claim 1, wherein: The switch control module (4) comprises triode Q11, triode Q12, triode Q13, triode Q14, triode Q15, resistor R30, resistor R31, resistor R32, resistor R34, resistor R35, resistor R36, resistor R37, resistor R38, resistor R39, resistor R40, resistor R41, diode D13 and capacitor C11; The emitter of triode Q11 is connected with the second energy storage module (3) and the first end of resistor R30 respectively; the base of triode Q11 is connected with the second end of resistor R30, the emitter of triode Q12 and the first end of resistor R31 respectively; the collector of triode Q12 is connected with the collector of triode Q11, the first end of resistor R36, the first end of resistor R39 and the base of triode Q15 respectively; the base of triode Q12 is connected with the second end of resistor R31 and the first end of resistor R32 respectively; the second end of resistor R32 is connected with the collector of triode Q13; the emitter of triode Q13 is connected with the first end of resistor R35; the second end of resistor R35 is connected with the first end of resistor R34 and the negative electrode port of the battery respectively; the second end of resistor R34 is connected with the MCU (1); The second end of resistor R36 is connected with the positive electrode of diode D13; the negative electrode of diode D13 is connected with the first end of resistor R40, the first end of resistor R41, the second end of resistor R37, the first end of resistor R38 and the positive electrode of capacitor C11 respectively; the negative electrode of capacitor C11 is connected with the source of MOS tube Q15 and the source of MOS tube Q2 respectively; the second end of resistor R38 is connected with the collector of triode Q14, the collector of triode Q15 and the second end of resistor R39; the second end of resistor R40 is connected with the gate of MOS tube Q15; the second end of resistor R41 is connected with the gate of MOS tube Q2.

5. The high-side driver circuit for a MOSFET according to claim 1, wherein: The sleep control module (5) is connected with the MCU (1), the positive electrode port of the battery, and the first energy storage module (2) respectively. The emitter of the triode Q3 is connected with the positive electrode port of the battery and the first end of the resistor R7 respectively; the collector of the triode Q3 is connected with the first energy storage module (2) and the collector of the triode Q4 respectively; the emitter of the triode Q4 is connected with the base of the triode Q3, the second end of the resistor R7, and the first end of the resistor R8 respectively; the second end of the resistor R8 is connected with the base of the triode Q4 and the first end of the resistor R9 respectively; the second end of the resistor R9 is connected with the collector of the triode Q5; the emitter of the triode Q5 is connected with the first end of the resistor R10; the second end of the resistor R10 is connected with the first end of the resistor R11 and the negative electrode port of the battery respectively; the second end of the resistor R11 is connected with the base of the triode Q5 and the MCU (1) respectively.

6. The high-side driver circuit of the MOSFET of claim 4, wherein: The battery positive electrode voltage detection module (6) is connected with the MCU (1), the positive electrode port of the battery, and the negative electrode port of the battery respectively; the battery positive electrode voltage detection module (6) comprises the resistor R1, the resistor R2, the resistor R3, and the capacitor C1; the positive electrode port of the battery is connected with the negative electrode port of the battery through the resistor R1, the resistor R2, and the resistor R3 connected in series; the capacitor C1 is connected in parallel across the resistor R3. The first energy storage module (2) further comprises the resistor R42, the resistor R43, the resistor R44, and the capacitor C7; the negative electrode of the capacitor C4 is connected with the negative electrode port of the battery through the resistor R42, the resistor R43, and the resistor R44 connected in series; the capacitor C7 is connected in parallel across the resistor R44; MCU(1) determines the voltage value of the negative pole of the capacitor C4 by detecting the voltage value between the resistor R43 and the resistor R44; MCU(1) determines the voltage value of the positive pole of the capacitor C4 by detecting the voltage value between the resistor R2 and the resistor R3; MCU(1) determines the voltage value V of the output end of the first energy storage module (2) according to the voltage value of the positive pole of the capacitor C4 and the voltage value of the negative pole of the capacitor C4 f .

7. The high-side driver circuit of the MOSFET of claim 3, wherein: The second energy storage module (3) further comprises the resistor R24, the resistor R25, the resistor R26, the resistor R27, the resistor R28, the resistor R29, the capacitor C9, and the capacitor C8. The negative electrode of the capacitor C5 is connected with the negative electrode port of the battery through the resistor R27, the resistor R28, and the resistor R29 connected in series; the capacitor C9 is connected in parallel across the resistor R29; the positive electrode of the capacitor C5 is connected with the negative electrode port of the battery through the resistor R24, the resistor R25, and the resistor R26 connected in series; the capacitor C8 is connected in parallel across the resistor R26. MCU(1) determines the voltage value of the negative pole of the capacitor C5 by detecting the voltage value between the resistor R28 and the resistor R29; MCU(1) determines the voltage value of the positive pole of the capacitor C5 by detecting the voltage value between the resistor R25 and the resistor R26; MCU(1) determines the voltage value V of the output end of the second energy storage module (3) according to the voltage value of the positive pole of the capacitor C5 and the voltage value of the negative pole of the capacitor C5 s .

8. The high-side driver circuit for a MOSFET according to claim 1, wherein: The battery charging and discharging voltage detection module (7) is connected with the MCU (1), the battery charging and discharging port, and the negative electrode port of the battery respectively; the battery charging and discharging voltage detection module (7) comprises the resistor R4, the resistor R5, the resistor R6, and the capacitor C2; the battery charging and discharging port is connected with the negative electrode port of the battery through the resistor R4, the resistor R5, and the resistor R6 connected in series; the capacitor C2 is connected in parallel across the resistor R6. The MCU (1) determines the voltage value of the battery charging and discharging port by detecting the voltage value between the resistor R6 and the resistor R5.

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