A multi-channel integrated oxygen-ion transistor and a method for manufacturing the same
By designing a multi-channel integrated oxygen ion transistor, the problem of unstable reservoir state in the existing technology was solved, achieving higher cycle stability and more reservoir states, thereby improving the computing power and energy efficiency of the storage pool computing system.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2023-07-27
- Publication Date
- 2026-07-10
AI Technical Summary
When developing memory cell computing systems, existing ion transistors struggle to obtain a sufficient number of stable and adjustable memory cell states. This is due to the inherent randomness of the physical mechanisms of memory cell devices and materials, resulting in poor cycle stability and limited output signals.
Design a multi-channel integrated oxygen-ion transistor, including a substrate, channels of different lengths, a drain, a source, an electrolyte layer, and a gate, wherein at least two channels of different lengths share a single gate, and the transistor is fabricated using an oxide material and standard photolithography and magnetron sputtering processes to realize multiple output current responses as computing resources.
It improves the separability and cycle stability of the storage pool state, enhances the accuracy and energy efficiency of the computing system, obtains more storage pool states through multiple output current responses, and improves the processing capability of the storage pool computing system.
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Figure CN116895687B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a multi-channel integrated oxygen ion transistor and its fabrication method. Background Technology
[0002] The rapid development of artificial intelligence technology and intelligent edge devices has brought numerous conveniences to human society, but it has also ushered in the "big data" era, with the amount of data to be processed growing exponentially. The existing von Neumann architecture with its separate storage and computing capabilities can no longer meet the demands for high-speed, energy-efficient information processing, necessitating the development of new computing systems. Therefore, developing reservoir computing (RC) systems based on novel devices such as ion transistors is a promising solution.
[0003] Currently, RC systems are mainly implemented in hardware by utilizing the physical phenomena exhibited by different devices and materials. The most important aspect of memory pool computation is ensuring that, for the same input signal, the memory pool state is stable and repeatable, and that there are a sufficient number of memory pool states to effectively extract features.
[0004] However, the hardware implementation of RC systems is currently affected by many non-ideal factors: due to the inherent randomness of the physical mechanisms of the reservoir devices and materials, it is difficult to guarantee the cyclic stability of the current response of the reservoir devices; secondly, the number of output terminals of the reservoir devices is limited, and the number of output signals that can be collected is small, making it difficult to obtain a sufficient number of reservoir states. Summary of the Invention
[0005] The purpose of this application is to provide a multi-channel integrated oxygen ion transistor and its fabrication method, so as to solve the problem that it is difficult to obtain a sufficient number of stable and adjustable reservoir states when developing a memory pool computing system using existing ion transistors.
[0006] In a first aspect, this application provides a multi-channel integrated oxygen-ion transistor, the multi-channel integrated oxygen-ion transistor comprising:
[0007] A substrate, at least two channels of different lengths disposed on the substrate, a drain and a source disposed on both sides of the channels above the substrate, and an electrolyte layer and a gate disposed sequentially on the channels;
[0008] In this configuration, at least two channels of different lengths share a single gate.
[0009] With the above technical solution, the multi-channel integrated oxygen ion transistor provided in this application includes: a substrate, at least two channels of different lengths disposed on the substrate, a drain and a source disposed on both sides of the channels above the substrate, and an electrolyte layer and a gate disposed sequentially on the channels; wherein, at least two channels of different lengths share a single gate, so that when a signal is input to the gate, multiple output current responses can be collected at the drain as computing resources, which is beneficial for obtaining more reservoir states.
[0010] In one possible implementation, both the channel and the electrolyte layer are made of oxide materials.
[0011] In one possible implementation, the channel is made of amorphous indium gallium zinc oxide.
[0012] In one possible implementation, the electrolyte layer is made of substoichiometric tantalum oxide.
[0013] In one possible implementation, the channel lengths of at least two different lengths include 2 micrometers, 5 micrometers, and 10 micrometers.
[0014] Secondly, this application also provides a method for fabricating a multi-channel integrated oxygen-ion transistor, the method comprising:
[0015] A silicon dioxide layer of a first predetermined thickness is formed on a P-type silicon wafer by oxidation to obtain a substrate;
[0016] The source and drain electrodes are formed on the substrate using standard photolithography and electron beam evaporation processes.
[0017] At least two channels and an electrolyte layer of different lengths are sputtered using standard photolithography and magnetron sputtering processes;
[0018] The gate is formed using standard photolithography and electron beam evaporation processes;
[0019] In this configuration, at least two channels of different lengths share a single gate.
[0020] In one possible implementation, forming the source and drain on the substrate using standard photolithography and electron beam evaporation processes includes:
[0021] The source and drain electrodes are patterned on the substrate using standard photolithography, and a second predetermined thickness of metal material is deposited using electron beam evaporation. The source and drain electrodes are then stripped to form the source and drain electrodes.
[0022] In one possible implementation, the process of sputtering at least two channels and electrolyte layers of different lengths using standard photolithography and magnetron sputtering includes:
[0023] The trench is patterned using standard photolithography, and the trench material with a third preset thickness is deposited by magnetron sputtering.
[0024] Electrolyte material of a fourth predetermined thickness is deposited by magnetron sputtering, and then peeled off to form at least two channels and electrolyte layers of different lengths.
[0025] In one possible implementation, forming the gate using standard photolithography and electron beam evaporation processes includes:
[0026] The gate is patterned using standard photolithography, and a metal material of a fifth predetermined thickness is deposited using electron beam evaporation. The gate is then peeled off to form the gate.
[0027] In one possible implementation, the metal material includes gold, platinum, or molybdenum, and the second preset thickness is greater than or equal to 10 nanometers and less than or equal to 35 nanometers. The specific value of the second preset thickness is not limited in the embodiments of this application, and can be adjusted according to the actual application scenario.
[0028] The beneficial effects of the method for fabricating the multi-channel integrated oxygen-ion transistor provided in the second aspect are the same as those of the multi-channel integrated oxygen-ion transistor described in the first aspect or any possible implementation of the first aspect, and will not be repeated here. Attached Figure Description
[0029] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:
[0030] Figure 1 This illustration shows a schematic diagram of a storage pool computing principle provided in an embodiment of this application;
[0031] Figure 2 This illustration shows a schematic diagram of the structure of a multi-channel integrated oxygen ion transistor according to an embodiment of this application;
[0032] Figure 3 A schematic diagram of a channel of different lengths provided in an embodiment of this application is shown;
[0033] Figure 4 A schematic cross-sectional view of a multi-channel integrated oxygen ion transistor provided in an embodiment of this application is shown.
[0034] Figure 5This illustration shows a schematic diagram of the DC response current-DC gate voltage curve of a multi-channel integrated oxygen ion transistor according to an embodiment of this application after 100 cyclic scans.
[0035] Figure 6 This illustration shows a schematic diagram of the current variation amplitude of a multi-channel integrated oxygen ion transistor under DC conditions for 100 cyclic scans, according to an embodiment of this application.
[0036] Figure 7 This illustration shows a schematic diagram of the current response curve of a multi-channel integrated oxygen ion transistor provided in this application under AC conditions with 200 cycles of voltage pulses.
[0037] Figure 8 This illustration shows a normalized decay current response curve of a multi-channel integrated oxygen ion transistor according to an embodiment of this application.
[0038] Figure 9 This illustration shows the normalized decay current variation amplitude corresponding to a multi-channel integrated oxygen ion transistor provided in this application when 200 cycles of voltage pulses are cyclically scanned under AC conditions.
[0039] Figure 10 The diagram illustrates the current response of a multi-channel integrated oxygen ion transistor with different channel lengths, according to an embodiment of this application.
[0040] Figure 11 This illustration shows a normalized decay current curve of a multi-channel integrated oxygen ion transistor according to an embodiment of this application.
[0041] Figure 12 This illustration shows a schematic diagram of the relaxation time obtained by fitting a multi-channel integrated oxygen-ion transistor according to an embodiment of this application;
[0042] Figure 13 This illustration shows a flowchart of a method for fabricating a multi-channel integrated oxygen ion transistor according to an embodiment of this application;
[0043] Figure 14 This illustration shows a schematic diagram of a device fabrication process according to an embodiment of this application.
[0044] Figure label:
[0045] 101-Substrate; 102-Channel; 103-Drain; 104-Source; 105-Electrolyte layer; 106-Gate. Detailed Implementation
[0046] To facilitate a clear description of the technical solutions in the embodiments of this application, the terms "first" and "second" are used in the embodiments of this application to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are only used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and the terms "first" and "second" are not necessarily different.
[0047] It should be noted that, in this application, the terms "exemplary" or "for example" are used to indicate that something is being described as an example, illustration, or illustration. Any embodiment or design described as "exemplary" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments or design solutions. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.
[0048] In this application, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can mean: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can mean: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.
[0049] Pool computing originated from Echo State Networks and Liquid State Machines. Figure 1 This application provides a schematic diagram illustrating the computing principle of a storage pool, as shown in the embodiment. Figure 1 As shown, the main features include: the reservoir contains internal recurrent feedback connections, thus enabling the processing of time-series information; an in-memory computing working mode; information is stored in the reservoir's state, and processing is achieved through changes in the reservoir's state; and input weights (W). in ) and internal weights of the reservoir (W) re Once randomly generated, the values are fixed and do not require training; only the output weights (W) are considered. out The system needs to be trained using a simple linear regression algorithm based on the target task, which greatly reduces training time and energy consumption. Therefore, the storage pool computing system can achieve high-speed and high-energy-efficiency information processing.
[0050] Figure 2 This illustration shows a schematic diagram of the structure of a multi-channel integrated oxygen ion transistor according to an embodiment of this application, as shown below. Figure 2 As shown, the multi-channel integrated oxygen-ion transistor includes:
[0051] The substrate 101, at least two channels 102 of different lengths disposed on the substrate 101, a drain 103 and a source 104 disposed on both sides of the channel 102 above the substrate, and an electrolyte layer 105 and a gate 106 disposed sequentially on the channel 102.
[0052] In this configuration, at least two channels 102 of different lengths share a single gate 106.
[0053] Ion transistors have a read-write separation operating mode, where the write process occurs at the gate and the read process occurs at the drain. This read-write separation structure gives the device better channel current regulation capability and stability. Ion transistors have a deterministic operating mechanism, relying on the movement of all ions in the electrolyte layer under the gate voltage, rather than randomly forming uncertain conductive filaments, which is beneficial for obtaining better cycle stability.
[0054] Figure 3 This illustration shows a schematic diagram of a channel of different lengths provided in an embodiment of this application. See also... Figure 3 The lengths of the channels, including at least two different lengths, are 2 micrometers (µm), 5 micrometers (µm), and 10 micrometers (µm). In this application embodiment, the number and length of the channels are not specifically limited, and can be adjusted according to the actual application scenario.
[0055] In summary, the multi-channel integrated oxygen ion transistor provided in this application includes: a substrate, at least two channels of different lengths disposed on the substrate, a drain and a source disposed on both sides of the channels above the substrate, and an electrolyte layer and a gate disposed sequentially on the channels; wherein, at least two channels of different lengths share a single gate, so that when a signal is input to the gate, multiple output current responses can be collected at the drain as computing resources, which is beneficial for obtaining more reservoir states.
[0056] Figure 4 This illustration shows a cross-sectional structural diagram of a multi-channel integrated oxygen-ion transistor according to an embodiment of this application. Figure 4 As shown, the multi-channel integrated oxygen-ion transistor includes:
[0057] The substrate 101, at least two channels 102 of different lengths disposed on the substrate 101, a drain 103 and a source 104 disposed on both sides of the channel 102 above the substrate, and an electrolyte layer 105 and a gate 106 disposed sequentially on the channel 102.
[0058] In this configuration, at least two channels 102 of different lengths share a single gate 106.
[0059] Optionally, both the channel and the electrolyte layer are made of oxide materials. The electrolyte layer is made of oxide materials, which can conduct electricity by relying on the movement of oxygen ions. Since the migration energy of oxygen ions is relatively large, they are not easily affected by small external disturbances, which is conducive to obtaining better cycle stability. Furthermore, the improvement of cycle stability is conducive to improving the separability characteristics of the reservoir state.
[0060] For example, the channel is made of amorphous indium gallium zinc oxide, and the electrolyte layer is made of substoichiometric tantalum oxide.
[0061] Figure 5 This diagram illustrates the DC response current-DC gate voltage curve of a multi-channel integrated oxygen ion transistor according to an embodiment of this application after 100 cyclic scans. Figure 6 This illustration shows a schematic diagram of the current variation amplitude of a multi-channel integrated oxygen-ion transistor provided in an embodiment of this application under DC conditions for 100 cyclic scans. Figure 5 As shown, the DC gate voltage (V) g The device exhibits excellent cycle stability after 100 scans. To further quantify the output current fluctuation, the low-resistivity current (Ig) at a gate voltage of 2V was analyzed. max ) and high-resistivity current (I min ) to quantify, such as Figure 6 As shown, the fluctuations in the high-resistivity state and the low-resistivity state are 6.2% and 3.4%, respectively, indicating that the device has excellent cycle stability under DC conditions.
[0062] Figure 7 This illustration shows a schematic diagram of the current response curve of a multi-channel integrated oxygen ion transistor provided in this application under AC conditions with 200 cycles of voltage pulses. Figure 7 As can be seen, the current curves basically overlap. Normalizing the decay current curve after removing the gate voltage yields the following result. Figure 8 The diagram shown is a normalized decay current response curve of a multi-channel integrated oxygen ion transistor according to an embodiment of this application, and the current at t=5s is quantized. Figure 9This illustration shows a schematic diagram of the normalized decay current variation amplitude of a multi-channel integrated oxygen ion transistor after 200 cycles of voltage pulse scanning under AC conditions, as provided in an embodiment of this application. It is also a schematic diagram of the quantization results. Figure 9 As shown, the current fluctuation is only 4%, indicating that the multi-channel integrated oxygen ion transistor also has excellent cycle stability under AC conditions. The improvement of cycle stability is beneficial to improving the separability of the reservoir state.
[0063] Figure 10 This illustration shows a schematic diagram of the current response of a multi-channel integrated oxygen ion transistor with different channel lengths, according to an embodiment of this application. Figure 10 It can be seen that different channel lengths will produce different current responses under the same gate voltage pulse input signal. Figure 11 This illustration shows a normalized decay current curve of a multi-channel integrated oxygen-ion transistor according to an embodiment of this application. Figure 11 It can be seen that different decay characteristics can be obtained after normalizing the decay current curve. Figure 12 The diagram illustrates the relaxation time obtained by fitting a multi-channel integrated oxygen ion transistor according to an embodiment of this application. By fitting with a first-order exponential relaxation equation, different relaxation times can be obtained. The fitting formula is y = y0 + exp(-t / τ), which shows that the decay current curves under different channel lengths can be used as different computing resources. This is beneficial for increasing the number of reservoir states, promoting feature extraction of input signals, and further improving the accuracy of the reservoir computing system.
[0064] In summary, the multi-channel integrated oxygen ion transistor provided in this application includes: a substrate, at least two channels of different lengths disposed on the substrate, a drain and a source disposed on both sides of the channels above the substrate, and an electrolyte layer and a gate disposed sequentially on the channels; wherein, at least two channels of different lengths share a single gate, so that when a signal is input to the gate, multiple output current responses can be collected at the drain as computing resources, which is beneficial for obtaining more reservoir states.
[0065] Figure 13 This document illustrates a flowchart of a method for fabricating a multi-channel integrated oxygen-ion transistor according to an embodiment of this application. Figure 13 As shown, the fabrication method of the multi-channel integrated oxygen ion transistor includes:
[0066] Step 201: Oxidize a silicon dioxide layer of a first preset thickness on a P-type silicon wafer to obtain a substrate.
[0067] Figure 14This application provides a schematic diagram of a device fabrication process according to an embodiment of the present application. Figure 14 As shown, a silicon dioxide layer of a first preset thickness is formed on a P-type silicon wafer by oxidation to obtain a substrate. The substrate is a SiO2 / P-Si substrate. The first preset thickness includes 300 nanometers. The thickness of the silicon wafer is approximately 500 micrometers. In this embodiment, the thickness of the silicon wafer and the first preset thickness are not specifically limited. They can be adjusted according to the actual application scenario.
[0068] Step 202: Form the source and drain electrodes on the substrate using standard photolithography and electron beam evaporation processes.
[0069] In this application, as Figure 14 As shown, the source and drain electrodes can be patterned on the substrate (SiO2 / P-Si) using standard photolithography, and a second predetermined thickness of metal material can be deposited using electron beam evaporation. The source and drain electrodes can then be stripped to form the source and drain electrodes.
[0070] The metal material includes gold (Au), platinum (Pt), or molybdenum (Mo), and is mainly used for electrical conductivity; the second preset thickness is greater than or equal to 10 nanometers and less than or equal to 35 nanometers. The specific value of the second preset thickness is not limited in this application embodiment, and can be adjusted according to the actual application scenario.
[0071] Step 203: Sputter at least two channels and electrolyte layers of different lengths using standard photolithography and magnetron sputtering processes.
[0072] See also in this application. Figure 14 The channel can be patterned using standard photolithography, and a third preset thickness of channel material can be sputtered and deposited using magnetron sputtering. An electrolyte material of a fourth preset thickness can be sputtered and deposited using magnetron sputtering, and then peeled off to form at least two channels and electrolyte layers of different lengths.
[0073] The third preset thickness can be 5-20 nanometers, and the channel material can include IGZO. x NbO x Materials such as x-values can be adjusted according to the content of different components, and the specific x-values are not limited in the embodiments of this application.
[0074] The fourth preset thickness can be 30-60 nanometers, and the electrolyte material can be TaO. x HfO x WO xThe oxide material, wherein the x value can be adjusted according to the content of different components, and the specific x value is not limited in the embodiments of this application.
[0075] Step 204: Form a gate using standard photolithography and electron beam evaporation processes; wherein at least two channels of different lengths share a single gate.
[0076] See also in this application. Figure 14 The gate can be patterned using standard photolithography, and a metal material of a fifth preset thickness can be deposited using electron beam evaporation, and then peeled off to form the gate.
[0077] The fifth preset thickness can be 10-35 nanometers. In this application embodiment, the specific value of the fifth preset thickness is not limited, and it can be adjusted according to the actual application scenario.
[0078] In summary, the fabrication method of the multi-channel integrated oxygen-ion transistor provided in this application involves forming a silicon dioxide layer of a first predetermined thickness on a P-type silicon wafer to obtain a substrate; forming a source and a drain on the substrate using standard photolithography and electron beam evaporation processes; sputtering at least two channels and an electrolyte layer of different lengths using standard photolithography and magnetron sputtering processes; and forming a gate using standard photolithography and electron beam evaporation processes. The at least two channels of different lengths share a single gate, allowing multiple output current responses to be collected at the drain for computational resource acquisition when a signal is input to the gate, thus facilitating the acquisition of more reservoir states.
[0079] This application provides a method for fabricating a multi-channel integrated oxygen-ion transistor, which can fabricate transistors such as... Figure 2-3 To avoid repetition, any of the multi-channel integrated oxygen-ion transistors shown will not be described again here.
[0080] Although this application has been described herein in conjunction with various embodiments, those skilled in the art, by reviewing the accompanying drawings, the disclosure, and the appended claims, will understand and implement other variations of the disclosed embodiments in carrying out the claimed application. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple instances. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.
[0081] Although this application has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made thereto without departing from the spirit and scope of this application. Accordingly, this specification and drawings are merely exemplary illustrations of this application as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of this application. Clearly, those skilled in the art can make various alterations and modifications to this application without departing from the spirit and scope of this application. Thus, if such modifications and modifications of this application fall within the scope of the claims of this application and their equivalents, this application is also intended to include such modifications and modifications.
Claims
1. A multi-channel integrated oxygen-ion transistor, characterized in that, The multi-channel integrated oxygen-ion transistor includes: A substrate, at least two channels of different lengths disposed on the substrate, a drain and a source disposed on both sides of the channels above the substrate, and an electrolyte layer and a gate disposed sequentially on the channels; In this configuration, at least two channels of different lengths share a single gate.
2. The multi-channel integrated oxygen-ion transistor according to claim 1, characterized in that, Both the channel and the electrolyte layer are made of oxide materials.
3. The multi-channel integrated oxygen-ion transistor according to claim 2, characterized in that, The channel is made of amorphous indium gallium zinc oxide.
4. The multi-channel integrated oxygen-ion transistor according to claim 2, characterized in that, The electrolyte layer is made of substoichiometric tantalum oxide.
5. The multi-channel integrated oxygen-ion transistor according to claim 1, characterized in that, The channel lengths, including at least two different lengths, are 2 micrometers, 5 micrometers, and 10 micrometers.
6. A method for fabricating a multi-channel integrated oxygen-ion transistor, characterized in that, The method for fabricating the multi-channel integrated oxygen-ion transistor according to any one of claims 1-5 includes: A silicon dioxide layer of a first predetermined thickness is formed on a P-type silicon wafer by oxidation to obtain a substrate; The source and drain electrodes are formed on the substrate using standard photolithography and electron beam evaporation processes. At least two channels and an electrolyte layer of different lengths are sputtered using standard photolithography and magnetron sputtering processes; The gate is formed using standard photolithography and electron beam evaporation processes; In this configuration, at least two channels of different lengths share a single gate.
7. The method for fabricating a multi-channel integrated oxygen-ion transistor according to claim 6, characterized in that, The source and drain electrodes are formed on the substrate using standard photolithography and electron beam evaporation processes, including: The source and drain electrodes are patterned on the substrate using standard photolithography, and a second predetermined thickness of metal material is deposited using electron beam evaporation. The source and drain electrodes are then stripped to form the source and drain electrodes.
8. The method for fabricating a multi-channel integrated oxygen-ion transistor according to claim 6, characterized in that, The process of sputtering at least two channels and an electrolyte layer of different lengths using standard photolithography and magnetron sputtering includes: The trench is patterned using standard photolithography, and the trench material with a third preset thickness is deposited by magnetron sputtering. Electrolyte material of a fourth predetermined thickness is deposited by magnetron sputtering, and then peeled off to form at least two channels and electrolyte layers of different lengths.
9. The method for fabricating a multi-channel integrated oxygen-ion transistor according to claim 6, characterized in that, The method of forming the gate using standard photolithography and electron beam evaporation includes: The gate is patterned using standard photolithography, and a metal material of a fifth predetermined thickness is deposited using electron beam evaporation. The gate is then peeled off to form the gate.
10. The method for fabricating a multi-channel integrated oxygen-ion transistor according to claim 7, characterized in that, The metallic material includes gold, platinum, or molybdenum.