A heating disc, a control method, a storage medium and a wafer spacing adjusting mechanism

Abstract

The application provides a heating disc, a control method, a storage medium and a wafer spacing adjustment mechanism. The heating disc comprises: a heating disc body for heating a wafer thereon to carry out thin film deposition; at least one spacing adjustment mechanism, a lower end of which contacts the heating disc body, and an upper end of which supports the wafer at least during the thin film deposition, wherein the lower end of the spacing adjustment mechanism is made of piezoelectric material and is stretched and contracted according to a control voltage received to adjust the distance between the wafer and the heating disc body; and a controller connected to the lower end of the at least one spacing adjustment mechanism and configured to: determine the control voltage of the spacing adjustment mechanism according to a body temperature of the heating disc body; and provide the control voltage to the lower end of the spacing adjustment mechanism to adjust the distance between the wafer and the heating disc body to a target distance corresponding to the body temperature.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of thin film deposition, and in particular to a heating disc, a wafer spacing adjustment mechanism, a heating disc control method, and a computer readable storage medium. BACKGROUND

[0002] Atomic layer deposition (ALD) equipment usually uses a heating disc to heat a wafer to be processed to promote the deposition of a thin film on the wafer surface, and prevents direct contact between the wafer and the heating disc by adding ceramic columns on the heating disc. By using ceramic columns of different heights, the ALD equipment can adjust the gap between the wafer and the heating disc to change the process parameters of the backside film formation and heating of the wafer, thereby affecting the final film thickness and thin film uniformity.

[0003] However, in the existing ALD equipment, different processes often require different gap distances, so it is necessary to shut down the equipment multiple times to replace ceramic columns of different heights or prepare multiple reaction chambers for different processes to realize a pipeline operation, thereby greatly affecting the processing efficiency of semiconductor wafers or greatly increasing the volume and cost of the ALD equipment. In addition, due to the limitation of processing precision, there will inevitably be slight height and flatness differences between different heating discs, so that different film thicknesses and thin film uniformities will be obtained even if the same ceramic column is arranged on different heating discs, thereby affecting the process repeatability and control precision of the film thickness.

[0004] In order to overcome the above-mentioned defects existing in the prior art, the technical field urgently needs a thin film deposition technology for real-time and accurate control of the spacing between the wafer and the heating disc body to simultaneously improve the processing precision and processing efficiency of thin film deposition. SUMMARY

[0005] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an extensive overview of all contemplated aspects, and is neither intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description presented later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a heating disc, a wafer spacing adjustment mechanism, a heating disc control method, and a computer readable storage medium, which can quickly adjust the spacing between the wafer and the heating disc with the change of the heating disc temperature parameter, thereby simultaneously improving the processing precision and processing efficiency of thin film deposition.

[0007] Specifically, the heating plate according to the first aspect of the present application comprises: a heating plate body for heating a wafer thereon to perform thin film deposition; at least one spacing adjustment mechanism, a lower end of which contacts the heating plate body, and an upper end of which supports the wafer at least during the thin film deposition, wherein the lower end of the spacing adjustment mechanism is made of piezoelectric material and is capable of stretching and contracting according to a control voltage received to adjust the distance between the wafer and the heating plate body; and a controller connected to the lower end of the at least one spacing adjustment mechanism and configured to: determine the control voltage of the spacing adjustment mechanism according to the body temperature of the heating plate body; and provide the control voltage to the lower end of the spacing adjustment mechanism to adjust the distance between the wafer and the heating plate body to a target distance corresponding to the body temperature.

[0008] Further, in some embodiments of the present application, the step of determining the control voltage of the spacing adjustment mechanism according to the body temperature of the heating plate body comprises: determining a process temperature of the thin film deposition and comparing it with the body temperature; in response to the difference between the process temperature and the body temperature being greater than a preset temperature threshold, determining a higher first control voltage for the spacing adjustment mechanism to increase the distance between the wafer and the heating plate body; and in response to the difference between the process temperature and the body temperature being less than the temperature threshold, determining a lower second control voltage for the spacing adjustment mechanism to decrease the distance between the wafer and the heating plate body.

[0009] Further, in some embodiments of the present application, the heating plate comprises a first spacing adjustment mechanism arranged in a central region of the heating plate and a second spacing adjustment mechanism arranged in an edge region of the heating plate. The step of determining the control voltage of the spacing adjustment mechanism according to the body temperature of the heating plate body comprises: determining a higher third control voltage for the first spacing adjustment mechanism and a lower fourth control voltage for the second spacing adjustment mechanism to reduce the support force of the second spacing adjustment mechanism on the edge region of the wafer.

[0010] Further, in some embodiments of the present application, the step of determining a higher third control voltage for the first distance adjusting mechanism and a lower fourth control voltage for the second distance adjusting mechanism to reduce the support force of the second distance adjusting mechanism on the edge region of the wafer includes: determining the third control voltage for the first distance adjusting mechanism according to the body temperature of the heating disc body and a pre-calibrated corresponding relationship between body temperature and control voltage; determining a corresponding control voltage difference for each of the second distance adjusting mechanisms according to the distance of each of the second distance adjusting mechanisms to the first distance adjusting mechanism; and determining the fourth control voltage for each of the second distance adjusting mechanisms according to the control voltage difference to correspondingly reduce the support force of each of the second distance adjusting mechanisms on the edge region of the wafer.

[0011] Further, in some embodiments of the present application, the heating disc further comprises a detector for detecting the wafer warping. The step of determining a higher third control voltage for the first distance adjusting mechanism and a lower fourth control voltage for the second distance adjusting mechanism to reduce the support force of the second distance adjusting mechanism on the edge region of the wafer includes: determining the third control voltage for the first distance adjusting mechanism; determining the wafer warping via the detector; determining a corresponding control voltage difference for each of the second distance adjusting mechanisms according to the wafer warping and the distance of each of the second distance adjusting mechanisms to the first distance adjusting mechanism; and determining the fourth control voltage for each of the second distance adjusting mechanisms according to the control voltage difference to correspondingly reduce the support force of each of the second distance adjusting mechanisms on the edge region of the wafer.

[0012] Further, in some embodiments of the present application, the heating disc body is provided with a plurality of mounting holes. The lower end of the distance adjusting mechanism extends into the mounting hole to contact the heating disc body and expose the upper end of the ceramic structure to support the wafer and / or contact the reaction gas.

[0013] Further, in some embodiments of the present application, the controller is connected in parallel to the corresponding distance adjusting mechanism via the plurality of mounting holes to provide the control voltage thereto.

[0014] In addition, the wafer distance adjusting mechanism according to the second aspect of the present application comprises a lower end and an upper end. The lower end is made of piezoelectric material, contacts the heating disc, and expands and contracts according to the control voltage received. The upper end is made of ceramic material, supports the wafer at least during the film deposition process, and adjusts the distance of the wafer to the heating disc in cooperation with the expansion and contraction of the lower end.

[0015] Further, the control method of a heating plate according to the third aspect of the present application comprises the following steps: determining a body temperature of a heating plate body, wherein the heating plate body is used to heat a wafer thereon for thin film deposition; determining a control voltage of at least one distance adjusting mechanism according to the body temperature, wherein a lower end of the at least one distance adjusting mechanism contacts the heating plate body, and an upper end thereof supports the wafer at least during the thin film deposition, the lower end of the distance adjusting mechanism is made of piezoelectric material and is capable of stretching and contracting according to the control voltage to adjust the distance between the wafer and the heating plate body; and providing the control voltage to the lower end of the at least one distance adjusting mechanism to adjust the distance between the wafer and the heating plate body to a target distance corresponding to the body temperature.

[0016] Further, the computer readable storage medium according to the fourth aspect of the present application has computer instructions stored thereon. When the computer instructions are executed by a processor, the control method of a heating plate according to the third aspect of the present application is implemented. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above features and advantages of the present application will be better understood through reading the detailed description of the embodiments of the present application in conjunction with the following drawings, in which: the components are not necessarily drawn to scale and components of similar or identical function or features can have the same or similar reference label.

[0018] Figure 1 A structural schematic diagram of a heating plate according to some embodiments of the present application is shown.

[0019] Figure 2 A flowchart of a control method of a heating plate according to some embodiments of the present application is shown.

[0020] Figure 3 A schematic diagram of a piezoelectric control principle according to some embodiments of the present application is shown.

[0021] Figure 4A A schematic diagram of wafer warping according to some embodiments of the present application is shown.

[0022] Figure 4B A schematic diagram of wafer warping suppression according to some embodiments of the present application is shown.

[0023] REFERENCE SIGNS

[0024] 10 heating plate body

[0025] 20 distance adjusting mechanism

[0026] 21 lower end

[0027] 22 upper end

[0028] 23 first pitch adjustment mechanism

[0029] 24 second pitch adjustment mechanism

[0030] 30 controller

[0031] 40 wafer DETAILED DESCRIPTION

[0032] The following detailed description is presented to enable any person skilled in the art to make and use the present application. Various modifications to the embodiments described herein will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments without departing from the scope of the application. Accordingly, the present application is not intended to be limited to the embodiments described herein but is to be accorded the widest scope consistent with the claims, the principles and the practices disclosed herein.

[0033] In the description of the present application, it is to be understood that the terms "mounting", "connected", "connecting" should be interpreted broadly, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0034] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only used for the convenience of description, and do not mean that the device described should be manufactured or operated in a specific orientation, so it should not be understood as a limitation of the present application.

[0035] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or sections, these components, regions, layers and / or sections should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or sections. Therefore, the first component, region, layer and / or section discussed below can be referred to as the second component, region, layer and / or section without departing from some embodiments of the present application.

[0036] As mentioned above, in the existing ALD device, different processes often require different gap distances, so it is necessary to shut down the device multiple times to replace ceramic columns of different heights or prepare multiple reaction chambers for different processes to achieve a pipeline operation, thereby greatly affecting the processing efficiency of semiconductor wafers or greatly increasing the volume and cost of the ALD device. In addition, due to the limitation of processing precision, there will inevitably be slight height and flatness differences between different heating plates, so that different film thickness and film uniformity will be obtained even if the same ceramic column is arranged on different heating plates, thereby affecting the process repeatability and the control precision of the film thickness.

[0037] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a heating plate, a wafer gap adjusting mechanism, a heating plate control method and a computer readable storage medium, which can quickly adjust the gap between the wafer and the heating plate with the change of the temperature parameter of the heating plate, thereby synchronously improving the processing precision and processing efficiency of film deposition.

[0038] In some non-limiting embodiments, the above-mentioned heating plate provided by the first aspect of the present application is configured with a heating plate body, a wafer gap adjusting mechanism provided by the second aspect of the present application, a memory and a controller. The memory includes but is not limited to the above-mentioned computer readable storage medium provided by the fourth aspect of the present application, and computer instructions are stored on the computer readable storage medium. The controller is connected to the memory and is configured to read and execute the computer instructions stored on the memory to implement the control method of the heating plate according to the third aspect of the present application.

[0039] For details, please refer to Figure 1 , Figure 1 The structure of the heating plate provided by some embodiments of the present application is shown in the figure.

[0040] As Figure 1 shown, in some embodiments of the present application, the heating plate includes a heating plate body 10, at least one gap adjusting mechanism 20, and a controller 30.

[0041] The heating plate body 10 is provided with a plurality of mounting holes to respectively accommodate and mount the lower ends of each gap adjusting mechanism 20, and the upper ends of the mounting holes are exposed through each gap adjusting mechanism 20 to support the wafer 40 to be processed. In addition, the heating plate body 10 is also provided with a heating assembly for heating the wafer 40 thereon to perform film deposition.

[0042] The at least one pitch adjustment mechanism 20 can be designed in the shape of a cylinder, with its lower end 21 extending into the mounting hole to contact the heating plate body 10. Made of piezoelectric material, it can extend and retract according to the applied control voltage to adjust the distance between the wafer 40 and the heating plate body. The upper end 22 of the at least one pitch adjustment mechanism 20 can be made of ceramic materials such as alumina or aluminum nitride, exposing upwards to the mounting hole to support the wafer 40 and / or contact the reaction gas, at least during thin film deposition. By designing the pitch adjustment mechanism 20 as a composite structure consisting of a piezoelectric retractable lower end 21 and an upper end 22 made of ceramic material, the present invention can control the pitch between the wafer and the heating plate body in real time and with precision, while also preventing the piezoelectric material sintered from inorganic salts from decomposing and penetrating into the wafer 40 under high-temperature conditions, thereby avoiding contamination of the wafer 40 and the reaction chamber.

[0043] The controller 30 can be located below the heating plate body 10 and connected in parallel to the lower end 21 of at least one spacing adjustment mechanism 20 via a mounting hole on the heating plate body 10. Based on the body temperature of the heating plate body 10, the controller determines the control voltage of each spacing adjustment mechanism 20 and provides the control voltage to the lower end of the spacing adjustment mechanism 20 to adjust the distance between the wafer 40 and the heating plate body 10 to the target distance corresponding to the body temperature. This allows for real-time and precise control of the spacing between the wafer 40 and the heating plate body 10, thereby simultaneously improving the processing accuracy and efficiency of thin film deposition.

[0044] The working principle of the heating plate and wafer pitch adjustment mechanism 20 described above will be described below with reference to some embodiments of heating plate control methods. Those skilled in the art will understand that these heating plate control methods are merely non-limiting embodiments provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions convenient for public implementation, rather than limiting all functions or all operating modes of the heating plate and wafer pitch adjustment mechanism 20. Similarly, the heating plate and wafer pitch adjustment mechanism 20 are also merely a non-limiting embodiment provided by the present invention, and do not constitute a limitation on the execution order or executing entity of the steps in these heating plate control methods.

[0045] Please refer to the reference. Figures 1-4B . Figure 2 A schematic flowchart of a heating plate control method according to some embodiments of the present invention is shown. Figure 3 A schematic diagram of the piezoelectric control principle provided according to some embodiments of the present invention is shown. Figure 4A A schematic diagram of wafer warpage provided according to some embodiments of the present invention is shown. Figure 4B A schematic diagram illustrating the suppression of wafer warpage according to some embodiments of the present invention is shown.

[0046] likeFigure 1 and Figure 2 As shown, during the thin film deposition process, the controller 30 can first determine the body temperature T of the heating plate body 10, and determine the control voltage V of at least one pitch adjustment mechanism 20 based on the body temperature T.

[0047] Please refer to the details. Figure 3 The lower end 21, made of piezoelectric material, expands and contracts with changes in the applied control voltage, thereby cooperating with the upper end 22 of the spacing adjustment mechanism to adjust the distance between the wafer 40 and the heating plate body 10. In some embodiments, a technician can pre-calibrate a first correspondence between the length L of the spacing adjustment mechanism 20 and the control voltage V, V = F1(L), and then calibrate a second correspondence between the target length L0 that achieves ideal thin film parameters at the process temperature T0, L0 = F2(T0). These two correspondences are then combined to determine a third correspondence between the target control voltage V0 and the process temperature T0, V0 = F1(F2(T0)) = F3(T0). The technician can then store this third correspondence V0 = F3(T0) as control information in the controller 30 and bind this control information to the corresponding heating plate body 10. Thus, during the thin film deposition process, the controller 30 can determine the control voltage V of each spacing adjustment mechanism 20 based on the pre-calibrated and stored third correspondence V0 = F3(T0) and the measured heating plate body temperature T.

[0048] Specifically, in some embodiments, in response to the measured heating plate body temperature T being greater than the target process temperature T0, and the difference between the two being greater than a preset temperature threshold, the controller 30 can determine that the actual temperature of the wafer 40 is too high. Based on the aforementioned third correspondence V0 = F3(T0), it determines a higher first control voltage V1 (i.e., V1 > V0) for the spacing adjustment mechanism 20, increasing the distance between the wafer 40 and the heating plate body 10 to reduce the actual temperature of the wafer 40. Conversely, in response to the measured heating plate body temperature T being less than the preset temperature threshold, the controller 30 can determine that the actual temperature of the wafer 40 is within an acceptable fluctuation range. Based on the aforementioned third correspondence V0 = F3(T0), it determines a lower second control voltage V2 (i.e., V2 = V0) for the spacing adjustment mechanism 20, decreasing the distance between the wafer 40 and the heating plate body 10 to maintain the actual temperature of the wafer 40.

[0049] Furthermore, such as Figures 4A-4B As shown, the aforementioned spacing adjustment mechanism 20 can be divided into a first spacing adjustment mechanism 23 located in the center region of the heating plate and a second spacing adjustment mechanism 24 located in the edge region of the heating plate, depending on the installation position. For Figure 4AIn view of the common situation that the wafer 40 is heated to be warped upward, the controller 30 can determine a higher third control voltage V3 for the first spacing adjustment mechanism 23 in the central region, and a lower fourth control voltage V4 for the second spacing adjustment mechanism 20 in the edge region, so as to reduce the support force of the second spacing adjustment mechanism 20 on the edge region of the wafer 40, thereby suppressing the phenomenon that the edge region of the wafer 40 is warped upward as shown, and improving the uniformity of the film thickness. Figure 4B In view of the common situation that the wafer 40 is heated to be warped upward, the controller 30 can determine a higher third control voltage V3 for the first spacing adjustment mechanism 23 in the central region, and a lower fourth control voltage V4 for the second spacing adjustment mechanism 20 in the edge region, so as to reduce the support force of the second spacing adjustment mechanism 20 on the edge region of the wafer 40, thereby suppressing the phenomenon that the edge region of the wafer 40 is warped upward as shown, and improving the uniformity of the film thickness.

[0050] Specifically, in one embodiment for suppressing wafer warping, the technician can further measure the distance d2 from each second spacing adjustment mechanism 24 to the center of the heating disc, and calibrate the control voltage difference AV = F4(d2-d1) of each second spacing adjustment mechanism 24 to the first spacing adjustment mechanism 23 according to the distance. Then, during the film deposition process, the controller 30 can first determine the third control voltage V3 of the first spacing adjustment mechanism 23 according to the body temperature of the heating disc body 10 and the third corresponding relationship V0 = F3(T0) calibrated in advance, and then determine the corresponding control voltage difference AV of each second spacing adjustment mechanism 24 according to the distance (d2-d1) from each second spacing adjustment mechanism 24 to the first spacing adjustment mechanism 23. Then, the controller 30 can determine the fourth control voltage V4 of each second spacing adjustment mechanism 24 according to the third control voltage V3 and the control voltage difference AV, so as to correspondingly reduce the support force of each second spacing adjustment mechanism 24 on the edge region of the wafer 40.

[0051] In addition, in another embodiment for suppressing wafer warping, the heating disc can further preferably comprise a detector for detecting the wafer warping degree. The technician can also calibrate the corresponding relationship between the control voltage difference AV and the wafer warping degree and the interval distance (d2-d1). Thus, after determining the third control voltage V3 of the first spacing adjustment mechanism 23, the controller 30 can further determine the wafer warping degree of the wafer 40 via the detector, and determine the corresponding control voltage difference AV of each second spacing adjustment mechanism 24 according to the wafer warping degree and the distance (d2-d1) from each second spacing adjustment mechanism 24 to the first spacing adjustment mechanism 23. Then, the controller 30 can determine the fourth control voltage V4 of each second spacing adjustment mechanism 24 as described above, so as to correspondingly reduce the support force of each second spacing adjustment mechanism 24 on the edge region of the wafer 40.

[0052] Please continue to refer to Figure 2After determining the control voltages of the distance adjustment mechanisms 20, the controller 30 can provide the control voltages to the lower ends of the corresponding distance adjustment mechanisms 20 respectively, so as to adjust the distance between the wafer 40 and the heating disc body 10 to the target distance corresponding to the body temperature T in real time, thereby synchronously improving the processing precision and efficiency of thin film deposition.

[0053] In summary, the above heating disc, wafer distance adjustment mechanism, control method and storage medium provided by the present application can control the distance between the wafer and the heating disc body in real time and accurately, so as to synchronously improve the processing precision and efficiency of thin film deposition.

[0054] Although the above-described methods are illustrated and described as a series of acts for simplicity, it is to be understood and appreciated that the methods are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that shown and described herein. In addition, not all illustrated acts can be required to implement a methodology in accordance with one or more embodiments.

[0055] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating tray, characterized by The heating disc comprises: a heating disc body for heating a wafer thereon for film deposition; a first spacing adjustment mechanism arranged at a central region of the heating disc body, and a second spacing adjustment mechanism arranged at an edge region of the heating disc body, wherein lower ends of the first and second spacing adjustment mechanisms contact the heating disc body, and upper ends of the first and second spacing adjustment mechanisms support the wafer at least during the film deposition, the upper ends of the first and second spacing adjustment mechanisms are made of ceramic material, and the lower ends of the first and second spacing adjustment mechanisms are made of piezoelectric material and are capable of stretching and contracting according to a control voltage applied thereto to adjust a distance between the wafer and the heating disc body; and a controller connected to the lower ends of the first and second spacing adjustment mechanisms and configured to determine a third control voltage higher than a fourth control voltage for the first and second spacing adjustment mechanisms respectively to reduce a supporting force of the second spacing adjustment mechanism on an edge region of the wafer, and to provide the control voltage to the lower ends of the first and second spacing adjustment mechanisms to adjust the distance between the wafer and the heating disc body to a target distance corresponding to a body temperature of the heating disc body.

2. The heating tray of claim 1, wherein, The step of determining the control voltage of the spacing adjustment mechanism according to the body temperature of the heating disc body comprises: determining a process temperature of the film deposition and comparing the process temperature with the body temperature; in response to a difference between the process temperature and the body temperature being greater than a preset temperature threshold, determining a first control voltage higher than the control voltage for the spacing adjustment mechanism to increase the distance between the wafer and the heating disc body; and in response to the difference between the process temperature and the body temperature being less than the temperature threshold, determining a second control voltage lower than the control voltage for the spacing adjustment mechanism to decrease the distance between the wafer and the heating disc body.

3. The heating tray of claim 1, wherein, The step of determining the third control voltage higher than the fourth control voltage for the first and second spacing adjustment mechanisms respectively to reduce the supporting force of the second spacing adjustment mechanism on the edge region of the wafer comprises: determining the third control voltage of the first spacing adjustment mechanism according to the body temperature of the heating disc body and a pre-calibrated corresponding relationship between the body temperature and the control voltage; determining a control voltage difference for each of the second spacing adjustment mechanisms according to a distance between each of the second spacing adjustment mechanisms and the first spacing adjustment mechanism; and determining the fourth control voltage of each of the second spacing adjustment mechanisms according to the control voltage difference to correspondingly reduce the supporting force of each of the second spacing adjustment mechanisms on the edge region of the wafer.

4. The heating tray of claim 1, wherein, The heating disc further comprises a detector for detecting a warping degree of the wafer, and the step of determining the third control voltage higher than the fourth control voltage for the first and second spacing adjustment mechanisms respectively to reduce the supporting force of the second spacing adjustment mechanism on the edge region of the wafer comprises: determining the third control voltage of the first spacing adjustment mechanism according to the warping degree of the wafer and the pre-calibrated corresponding relationship between the body temperature and the control voltage; determining a third control voltage of the first distance adjusting mechanism; determining a warpage of the wafer via the detector; determining a corresponding control voltage difference of each of the second distance adjusting mechanisms according to the warpage and a distance from each of the second distance adjusting mechanisms to the first distance adjusting mechanism, respectively; and determining a fourth control voltage of each of the second distance adjusting mechanisms according to the control voltage difference, respectively, to correspondingly reduce a supporting force of each of the second distance adjusting mechanisms on the edge region of the wafer.

5. The heating tray of claim 1, wherein, The heating disc body is provided with a plurality of mounting holes, and the lower end of the distance adjusting mechanism extends into the mounting hole to contact the heating disc body and expose the upper end of the ceramic structure to support the wafer and / or contact the reaction gas.

6. The heating tray of claim 5, wherein, The controller is connected to the corresponding distance adjusting mechanism in parallel via the plurality of mounting holes to provide the control voltage to the distance adjusting mechanism.

7. A control method of a heating disc, characterized by, comprising the steps of: determining a body temperature of a heating disc body, wherein the heating disc body is used to heat a wafer thereon for film deposition; determining a higher third control voltage for a first distance adjusting mechanism and a lower fourth control voltage for a second distance adjusting mechanism to reduce a supporting force of the second distance adjusting mechanism on an edge region of the wafer, wherein the lower end of the first distance adjusting mechanism and the second distance adjusting mechanism contacts the heating disc body, and the upper end thereof supports the wafer at least during the film deposition, the upper end of the distance adjusting mechanism is made of ceramic material to support the wafer at least during the film deposition, the lower end of the distance adjusting mechanism is made of piezoelectric material to stretch and contract according to the control voltage received thereby to adjust a distance of the wafer to the heating disc body; and providing the control voltage to the lower end of the at least one distance adjusting mechanism to adjust the distance of the wafer to the heating disc body to a target distance corresponding to the body temperature.

8. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions are executed by the processor to implement the control method of the heating disc as claimed in claim 7. The computer instructions are executed by the processor to implement the control method of the heating disc as claimed in claim 7.

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