Based on two-dimensional material Nb8PtSe 20 Infrared Response Detector and Its Fabrication Method

Abstract

The application belongs to the technical field of photoelectric detectors, and discloses an infrared response detector based on a two-dimensional material Nb8PtSe 20 and a preparation method thereof. The infrared response detector comprises, from bottom to top, a substrate, a two-dimensional material Nb8PtSe 20 and an electrode. The infrared light detector contains a specific structure, and utilizes the two-dimensional material Nb8PtSe 20 , so that the infrared light detector can not only normally work at room temperature, but also has a higher response in a 1064nm wave band (short infrared) and a 10.6mu m wave band (mid-infrared).

Description

Technical Field

[0001] This invention belongs to the field of photodetector technology, and specifically relates to two-dimensional material Nb8PtSe. 20 Infrared response detector and its fabrication method. Background Technology

[0002] Two-dimensional (2D) material-based photodetectors have attracted considerable attention due to their unique structure and excellent electronic and optoelectronic properties. These 2D materials, including graphene and black phosphorus, exhibit a wide distribution across band gap values. Currently, 2D material-based photodetectors have been reported to possess many impressive properties, including ultra-high optical response, polarization-sensitive light detection, an ultra-wide detection band covering wavelengths from ultraviolet to terahertz frequencies, and high spatial resolution imaging characteristics due to their unique electronic and optoelectronic properties. The atoms in 2D materials are arranged in a plane by tight covalent or ionic bonds to form atomic layers, and these atomic-level thin layers are bonded together by weak van der Waals interactions along a three-dimensional space perpendicular to the 2D plane. These weak interlayer interactions make it possible to peel bulk crystals into isolated 2D sheets or even single atomic-level thin layers.

[0003] Optoelectronic devices are semiconductor devices constructed using the transmission and interconversion mechanisms of photons and electrons. They are widely used in various fields and have enormous strategic demand and importance. Infrared photodetectors are not only a part of photoelectric detectors but also an important component of infrared technology, widely used in thermal imaging, optical communication, and spectral analysis. Currently, infrared detectors based on mercury cadmium telluride (HgGdTe) and antimony compounds (including InAs / GaSb and InAs / InAsSb) are considered one of the most ideal choices for fabricating third-generation infrared detectors due to their good uniformity, low dark current, and wide wavelength tuning range, and have dominated the commercial infrared detector market for many years.

[0004] However, traditional mid-infrared photodetectors such as HgCdTe, InSb, InAs / InGaSb and quantum superlattices are limited by complex material growth and manufacturing techniques, environmental toxicity, low yield, high cost and susceptibility to interference from various heat sources and sunlight sources, and they require liquid nitrogen temperature to function properly.

[0005] To address these issues, there is an urgent need to find promising alternative materials or design novel structures for the next generation of highly sensitive uncooled mid-infrared photodetectors. Summary of the Invention

[0006] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a method based on the two-dimensional material Nb8PtSe. 20An infrared-responsive detector and its fabrication method. The purpose of this invention is to provide a novel two-dimensional layered material, Nb8PtSe. 20 Infrared response detector based on Nb8PtSe 20 The infrared photodetector described in this invention not only operates normally at room temperature, but also exhibits high response in the 1064nm (short infrared) and 10.6μm (mid infrared) bands. Furthermore, the infrared response detector described in this invention has advantages such as low cost and simple material fabrication.

[0007] The first aspect of the present invention provides a material based on two-dimensional Nb8PtSe. 20 Infrared response detector.

[0008] Specifically, based on the two-dimensional material Nb8PtSe 20 The infrared response detector, from bottom to top, includes a substrate, a two-dimensional material Nb8PtSe, and a two-dimensional material Nb8PtSe. 20 ,electrode.

[0009] Preferably, the substrate is a silicon wafer with a SiO2 layer on its surface.

[0010] Preferably, the electrode is a metal electrode.

[0011] Preferably, the electrode is composed of a Ti layer and an Au layer from bottom to top.

[0012] Preferably, the thickness of the Ti layer is 5-20 nm, more preferably 10-12 nm.

[0013] Preferably, the thickness of the Au layer is 90-110 nm, more preferably 95-100 nm.

[0014] Preferably, the number of electrodes is 2.

[0015] Preferably, the electrode has a specific shape or pattern.

[0016] Preferably, the electrode pattern is designed as four parallel, opposite rectangular or elliptical strip-shaped probe electrodes, connected to an outwardly extending 500μm*500μm square. The parallel arrangement and opposite arrangement of the probe electrodes avoids interference between the test electrodes and facilitates the calculation of the effective channel area required for subsequent performance calculations such as responsivity.

[0017] A second aspect of the present invention provides a material based on two-dimensional Nb8PtSe. 20 The fabrication method of the infrared response detector.

[0018] Specifically, based on the two-dimensional material Nb8PtSe 20 The method for fabricating an infrared-response detector includes the following steps:

[0019] Two-dimensional material Nb8PtSe 20 The electrode area is placed on a substrate, coated with a layer of positive adhesive, heated and cured, exposed, then immersed in a developer, removed, and the electrode material is vapor-deposited. After vapor deposition, the unexposed positive adhesive is removed by immersion in an organic solvent to obtain the infrared response detector.

[0020] Preferably, the temperature for heat curing is 95-105℃ and the time is 3-5 minutes; more preferably, the temperature for heat curing is 95-100℃ and the time is 4-5 minutes.

[0021] Preferably, the developing solution comprises a tetramethylammonium hydroxide solution.

[0022] Preferably, the mass fraction of the tetramethylammonium hydroxide solution is 5-40%, more preferably 10-30%.

[0023] Preferably, the organic solvent includes acetone.

[0024] Preferably, the two-dimensional material Nb8PtSe 20 Prepared by solid-phase synthesis.

[0025] Preferably, the two-dimensional material Nb8PtSe 20 The preparation method includes the following steps: weighing Nb, Pt, and Se elements, mixing them, placing the resulting mixture in a reaction vessel, evacuating and sealing the reaction vessel, and then heating and maintaining the temperature of the reaction vessel to obtain the two-dimensional material Nb8PtSe. 20 .

[0026] Preferably, the molar ratio of Nb, Pt, and Se is 2:1:7.

[0027] Preferably, the reaction vessel is a quartz tube.

[0028] Preferably, the reaction vessel is evacuated for 10 seconds. -5 Torr below.

[0029] Preferably, the reaction vessel is sealed using a hydrogen-oxygen mixture.

[0030] Preferably, the heating and heat preservation temperature is 880-910K, and the heat preservation time is 140-150 hours; more preferably, the heating and heat preservation temperature is 890-990K, and the heat preservation time is 147-150 hours.

[0031] Preferably, the two-dimensional material Nb8PtSe prepared by the above method is... 20 Transfer the material to 3M white tape and fold it multiple times to transfer the two-dimensional Nb8PtSe material. 20Symmetrically peeled off, then the two-dimensional material Nb8PtSe on the 3M white tape was removed. 20 The material is transferred onto a PDMS thin film and held for 5-10 minutes. Then, the 3M white tape and the PDMS film are separated. Finally, the PDMS film is bonded to a silicon wafer with a 280-285nm SiO2 film on its surface. After holding for 1-2 minutes, they are separated, thus completing the transfer of the two-dimensional material Nb8PtSe. 20 The process of transferring the material onto a silicon wafer.

[0032] The electrode pattern is drawn using the layout software Klayout and then imported into the software that controls the lithography machine.

[0033] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0034] (1) The present invention is based on Nb8PtSe 20 The infrared photodetector contains a specific structure and utilizes the two-dimensional material Nb8PtSe. 20 It can not only work normally at room temperature, but also has a high response in the 1064nm band (short infrared) and the 10.6μm band (mid infrared).

[0035] (2) The infrared response detector described in this invention has the advantages of low cost and simple material manufacturing. Attached Figure Description

[0036] Figure 1 The Nb8PtSe prepared in step (1) of Example 1 of this invention 20 Optical microscope image;

[0037] Figure 2 Nb8PtSe in step (2) of embodiment 1 of the present invention 20 Optical microscope image on a silicon wafer;

[0038] Figure 3 Nb8PtSe is the Nb8PtSe of Embodiment 1 of the present invention. 20 X-ray diffraction pattern;

[0039] Figure 4 Nb8PtSe is the Nb8PtSe of Embodiment 1 of the present invention. 20 Scanning electron microscope image;

[0040] Figure 5 Nb8PtSe is the Nb8PtSe of Embodiment 1 of the present invention. 20 EDS (energy dispersive spectroscopy) image;

[0041] Figure 6 Nb8PtSe is the Nb8PtSe of Embodiment 1 of the present invention. 20 Raman spectra;

[0042] Figure 7 An optical microscope image of the infrared response detector prepared in Example 1 of this invention;

[0043] Figure 8 This is one of the photoelectric response results of the infrared response detector at 1064 nm in Embodiment 1 of the present invention;

[0044] Figure 9 This is the second photoelectric response result of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0045] Figure 10 This is the third result of the photoelectric response of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0046] Figure 11 This is the fourth result of the photoelectric response of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0047] Figure 12 This is the fifth result of the photoelectric response of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0048] Figure 13 This is one of the photoelectric response results of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention;

[0049] Figure 14 This is the second photoelectric response result of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention;

[0050] Figure 15 This is the third result of the photoelectric response of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention;

[0051] Figure 16 This is the fourth result of the photoelectric response of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention. Detailed Implementation

[0052] To enable those skilled in the art to more clearly understand the technical solutions described in this invention, the following embodiments are provided for illustration. It should be noted that the following embodiments do not constitute a limitation on the scope of protection claimed by this invention.

[0053] Unless otherwise specified, the raw materials, reagents or devices used in the following examples are available from conventional commercial sources or can be obtained by existing known methods.

[0054] Example 1: Fabrication of an Infrared Response Detector

[0055] A method based on the two-dimensional material Nb8PtSe 20The infrared response detector, from bottom to top, consists of a silicon wafer with a 285nm SiO2 thin film on its surface, and a two-dimensional material Nb8PtSe. 20 Electrodes; the electrodes, from bottom to top, consist of a 10nm thick Ti layer and a 100nm thick Au layer.

[0056] A method based on the two-dimensional material Nb8PtSe 20 The method for fabricating an infrared-response detector includes the following steps:

[0057] (1) Weigh out Nb, Pt, and Se elements (molar ratio of Nb, Pt, and Se is 2:1:7, total mass is 0.5g), mix them, and place the resulting mixture in a quartz tube with a length of 10cm and an outer diameter of 13mm. Use a molecular pump to evacuate the tube to a vacuum level of 10. -5 Below Torr, the quartz tube is sealed with a hydrogen-oxygen mixture and cooled. Then, the quartz tube is placed in a muffle furnace and held at 900 K for 150 hours to obtain Nb8PtSe. 20 ;

[0058] (2) Use experimental tweezers to handle the above Nb8PtSe 20 Transfer to 3M white tape and fold Nb8PtSe 10 times. 20 Peel symmetrically, then remove the Nb8PtSe from the 3M white tape. 20 The material was transferred onto a PDMS thin film and held for 10 minutes. Then, the 3M white tape and the PDMS thin film were separated. Finally, the PDMS thin film was attached to a silicon wafer with a 285nm SiO2 film on its surface, held for 1 minute, and then separated. This completes the Nb8PtSe transfer process. 20 The process of transferring the material onto a silicon wafer;

[0059] (3) Nb8PtSe 20 After being transferred onto a silicon wafer, a layer of positive adhesive is spin-coated onto the wafer surface and cured at 100°C for 4 minutes on a heating stage to fix and stabilize the adhesive. Then, the adhesive in the specific electrode pattern area is modified by ultraviolet exposure through a photolithography machine. The silicon wafer is then placed in a tetramethylammonium hydroxide solution (15% by mass) for 10 seconds. After development, it is removed to obtain the blank area of ​​the specific electrode pattern. Then, 10 nm of Ti and 100 nm of Au are deposited on the silicon wafer surface by electron beam evaporation. After evaporation, the silicon wafer is placed in acetone to remove the unexposed adhesive and the metal Ti and Au on it, thus obtaining an infrared response detector.

[0060] The electrode pattern was drawn using the layout software Klayout and then imported into the software controlling the lithography machine. The electrode pattern was designed as four parallel, paired rectangular or elliptical strip-shaped probe electrodes, connected to an outwardly extending 500μm*500μm square. This parallel, paired probe electrode structure avoids interference between test electrodes and facilitates the calculation of the effective channel area required for subsequent performance metrics such as responsivity.

[0061] Figure 1 The Nb8PtSe prepared in step (1) of Example 1 of this invention 20 Optical microscope image. From Figure 1 It can be seen that the Nb8PtSe obtained in step (1) above 20 It has a black, needle-like shape.

[0062] Figure 2 Nb8PtSe in step (2) of embodiment 1 of the present invention 20 Optical microscope image on a silicon wafer.

[0063] Figure 3 Nb8PtSe is the Nb8PtSe of Embodiment 1 of the present invention. 20 X-ray diffraction pattern.

[0064] Figure 3 (The horizontal axis "degree" represents degrees, and "Intensity" represents intensity) represents the scanning of Nb8PtSe using an X-ray diffractometer. 20 The results are polycrystalline, with the following being Nb8PtSe. 20 The standard spectrum of the powder, with the curve above being the spectrum obtained from experimental testing (experimental spectrum), shows that the two agree very well, proving that step (1) of the present invention yielded Nb8PtSe with very high purity. 20 Polycrystalline. Then, Nb8PtSe is transferred onto the silicon wafer. 20 It is attached to conductive adhesive and placed inside the scanning electron microscope (SEM) chamber for further clear observation of the single crystal surface morphology (e.g., ...). Figure 4 (As shown).

[0065] EDS is an elemental composition analysis method used in scanning electron microscopy. Through EDS characterization, the atomic composition and proportions of materials can be analyzed, such as... Figure 5 As shown, the atomic ratio of Se, Nb, and Pt is 58.776%:36.490%:4.734%. It can be seen that the ratio of Nb, Pt, and Se is very close to 8:1:20, proving that the single crystal prepared in this embodiment has the same elemental ratio as the desired single crystal. Preliminary characterization confirms that the experiment successfully obtained high-quality Nb8PtSe. 20 Single crystal.

[0066] Figure 6 Nb8PtSe is the Nb8PtSe of Embodiment 1 of the present invention. 20 Raman spectra of Nb8PtSe at a two-dimensional scale. 20 The thin slices were tested using a Raman spectrometer, and the results were as follows: Figure 6 (The horizontal axis “Raman shift” represents the Raman shift, and the vertical axis “Intensity” represents the intensity.)

[0067] Figure 7 An optical microscope image of the infrared response detector prepared in Example 1 of the present invention.

[0068] Transistor and photoelectric testing: The infrared response detector prepared in Example 1 was placed on a probe stage, and the probe was used to contact the metal electrode. The IV curve data was then measured using a picoampere meter. Conductive silver paste was used to connect the Au wire and the 500μm*500μm electrode deposited on the device. After fixing, conductive silver paste was used to fix the other end of the Au wire to the conductive copper sheet on the circuit board. The Cu wire was then fixed to the copper sheet, thus extending the electrode outwards for subsequent testing. Due to the infrared response detector's large dark current and good conductivity, a lock-in amplifier SR830 was selected for measurement. The output current frequency of the lock-in amplifier was set to 113.1Hz and 3.333Hz respectively. Lasers from 1064nm and 10.6μm lasers were sequentially applied to the extended infrared response detector, and the photoelectric data was measured using the lock-in amplifier SR830.

[0069] Figure 8 This is one of the photoelectric response results of the infrared response detector at 1064 nm in Embodiment 1 of the present invention;

[0070] Figure 9 This is the second photoelectric response result of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0071] Figure 10 This is the third result of the photoelectric response of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0072] Figure 11 This is the fourth result of the photoelectric response of the infrared response detector at 1064nm in Embodiment 1 of the present invention;

[0073] Figure 12 This is the fifth result of the photoelectric response of the infrared response detector at 1064nm in Embodiment 1 of the present invention.

[0074] in, Figure 8 The dark current of the infrared response detector varies with bias voltage. It can be seen that the dark current increases with increasing bias voltage (the infrared response detector with a larger dark current corresponds to Nb8PtSe).20 The thicker the material, the better its response to infrared radiation, indicating that the infrared response detector has good conductivity. Figure 9 The figure shows the changes in photocurrent and responsivity with the power density of a 1064nm laser. As can be seen from the figure, the photoresponsivity of the infrared response detector is around 1.2A / W, which is relatively high in the short infrared region, indicating that the infrared response detector has high sensitivity to light. Figure 10 The diagram shows the changes in photocurrent and responsivity as a function of the bias voltage of the infrared response detector. It can be seen that the photocurrent and responsivity increase as the bias voltage of the infrared response detector increases. Figure 11 Since the intensity of the photocurrent in an infrared response detector varies under different laser polarization angles, the Nb8PtSe content in the detector can be determined by observing the change in photocurrent with the polarization angle. 20 Anisotropy. Figure 12 The response time of the infrared response detector was demonstrated, with a fall time of approximately 128ms, which is relatively short.

[0075] Figure 13 This is one of the photoelectric response results of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention;

[0076] Figure 14 This is the second photoelectric response result of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention;

[0077] Figure 15 This is the third result of the photoelectric response of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention;

[0078] Figure 16 This is the fourth result of the photoelectric response of the infrared response detector at 10.6 μm in Embodiment 1 of the present invention.

[0079] in, Figure 13 The dark current of the infrared response detector varies with the bias voltage. Figure 14 The diagram shows the change in photocurrent with the power density of a 10.6 μm laser. The fitting curve shows a near-linear change, indicating that the Nb8PtSe in the infrared response detector exhibits good performance. 20 The efficiency with which photons are converted into electrons is very high. Figure 15-16 As can be seen, the photoresponse of the infrared response detector is around 30 mA / W, which is relatively high in the mid-infrared region, indicating that the infrared response detector has high sensitivity to light. Overall, the infrared response detector exhibits excellent response performance at 1064 nm and 10.6 μm.

Claims

1. An infrared response detector, characterized in that, From bottom to top, it includes the substrate, the two-dimensional material Nb8PtSe, and so on. 20 ,electrode.

2. The infrared response detector according to claim 1, characterized in that, The substrate is a silicon wafer with a SiO2 layer on its surface.

3. The infrared response detector according to claim 1, characterized in that, The electrode is a metal electrode.

4. The infrared response detector according to claim 3, characterized in that, The electrode consists of a Ti layer and an Au layer from bottom to top.

5. The infrared response detector according to claim 4, characterized in that, The thickness of the Ti layer is 5-20 nm; the thickness of the Au layer is 90-110 nm.

6. A method for preparing an infrared response detector according to any one of claims 1-5, characterized in that, Includes the following steps: Two-dimensional material Nb8PtSe 20 The electrode area is placed on a substrate, coated with a layer of positive adhesive, heated and cured, exposed, then immersed in a developer, removed, and the electrode material is vapor-deposited. After vapor deposition, the unexposed positive adhesive is removed by immersion in an organic solvent to obtain the infrared response detector.

7. The preparation method according to claim 6, characterized in that, The two-dimensional material Nb8PtSe 20 Prepared by solid-phase synthesis.

8. The preparation method according to claim 7, characterized in that, The two-dimensional material Nb8PtSe 20 The preparation method includes the following steps: weighing Nb, Pt, and Se elements, mixing them, placing the resulting mixture in a reaction vessel, evacuating and sealing the reaction vessel, and then heating and maintaining the temperature of the reaction vessel to obtain the two-dimensional material Nb8PtSe. 20 .

9. The preparation method according to claim 8, characterized in that, The molar ratio of Nb, Pt, and Se is 2:1:7; the reaction vessel is evacuated for 10 minutes. -5 The heating and heat preservation temperature is 880-910K, and the heat preservation time is 140-150 hours.

10. The preparation method according to claim 6, characterized in that, The two-dimensional material Nb8PtSe 20 Transfer the material to 3M white tape and fold it multiple times to transfer the two-dimensional Nb8PtSe material. 20 Symmetrically peeled off, then the two-dimensional material Nb8PtSe on the 3M white tape was removed. 20 The material is transferred onto an organosilicon film. After holding for 5-10 minutes, the 3M white tape and the organosilicon film are separated. Finally, the organosilicon film is attached to a silicon wafer with a 280-285nm SiO2 film on its surface. After holding for 1-2 minutes, they are separated, thus completing the transfer of the two-dimensional material Nb8PtSe. 20 The process of transferring the material onto a silicon wafer.

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