Semiconductor rare earth doped composite multi-core optical fiber and its preform, preparation method and application

Abstract

The present invention discloses a semiconductor rare earth doped composite multi-core optical fiber and its preform, preparation method and application, belonging to the field of composite optical fiber technology, which includes a rare earth doped core located in the middle and a quartz cladding arranged on its periphery, wherein at least one pair of semiconductor cores is arranged in the quartz cladding; by utilizing the combination of rare earth ions and co-doping materials in the rare earth doped core, and the corresponding optimization of semiconductor materials in the semiconductor core, the composite multi-core optical fiber has both the gain function of the rare earth doped optical fiber and the sensing function of the semiconductor optical fiber. The semiconductor rare earth doped composite multi-core optical fiber of the present invention can realize the reliable combination of rare earth materials and semiconductor materials in the optical fiber, so that the optical fiber has both the gain function and can meet the needs of thermoelectric, piezoelectric and / or photoelectric conversion, effectively improving the functionality of the composite optical fiber, improving the sensitivity of the composite optical fiber to changes in environmental conditions and increasing its response rate, thereby improving the functionality of the composite optical fiber.

Description

Technical Field

[0001] The present invention belongs to the technical field of composite optical fibers, and in particular relates to semiconductor rare earth doped composite multi-core optical fibers and preforms, as well as preparation methods and applications thereof. Background Art

[0002] In the field of optical devices, rare-earth-doped fibers are widely used and researched as gain media in fiber lasers and fiber amplifiers. Common examples include erbium-doped fibers and erbium-ytterbium co-doped fibers for fiber amplifiers; and ytterbium-doped fibers, thulium-doped fibers, and ytterbium-holmium co-doped fibers for fiber lasers. After decades of development, the preparation process for rare-earth-doped fibers using MCVD and PCVD combined with the tube-and-rod method, as well as their application in related fields, has become relatively mature.

[0003] With the rapid development of optical fiber technology, fibers with diverse functions and components, such as multicomponent fibers, organic fibers, semiconductor fibers, and crystal fibers, are becoming the forefront of research. Functional multiplication has become the future development direction of composite fibers, and it is more in line with the development needs of miniaturized optical fiber devices.

[0004] Semiconductor optical fibers have developed rapidly in recent years. Leveraging the miniaturization potential of optical fibers, semiconductors with diverse piezoelectric, thermoelectric, and optoelectronic properties can be incorporated into optical fibers, providing a new approach to miniaturizing semiconductor devices. Common methods for preparing semiconductor optical fibers include the fused core method and capillary deposition.

[0005] Although semiconductor fibers and rare-earth-doped fibers have achieved certain applications, the control process for traditional gain fibers typically involves using a fiber beam splitter to separate a portion of the signal light for analysis, and then adjusting the gain based on the analysis results. However, traditional optical fibers take a long time to respond to external environmental conditions such as pressure and temperature. Therefore, traditional gain fibers cannot quickly adjust and respond to changes in the external environment, and their inability to respond in a timely manner has certain application limitations.

[0006] To this end, researchers are considering combining the sensing function of semiconductor optical fibers with the gain function of rare-earth-doped optical fibers in order to achieve operations such as real-time and timely gain control. However, the traditional way of combining materials is to mix the two materials, but for semiconductor materials and rare-earth-doped glass, the two cannot be simply mixed and then drawn into optical fibers. This is because semiconductor doping into the optical fiber core will cause a sharp increase in optical fiber loss, thereby affecting the optical fiber transmission performance and gain. For this reason, how to achieve effective combination of semiconductor optical fibers and rare-earth-doped optical fibers has become a technical problem that has plagued the industry, and has also limited the application and development of composite optical fibers to a certain extent. Summary of the Invention

[0007] In response to one or more of the above-mentioned defects or improvement needs of the prior art, the present invention provides a semiconductor rare earth doped composite multi-core optical fiber and its preform, preparation method and application, which can realize the composite setting of semiconductor materials and rare earth elements in the composite multi-core optical fiber, so that the composite multi-core optical fiber can simultaneously exert the characteristics of the two materials, realize real-time gain and timely regulation of the composite optical fiber, and improve the functionality of the composite optical fiber.

[0008] To achieve the above object, one aspect of the present invention provides a semiconductor rare earth doped composite multi-core optical fiber, which includes a rare earth doped core located in the middle and a quartz cladding disposed around the outer periphery of the rare earth doped core;

[0009] At least one pair of semiconductor cores is disposed in the quartz cladding; the two semiconductor cores in each pair of semiconductor cores are symmetrically disposed with respect to the rare earth doped core; and

[0010] The at least one pair of semiconductor cores includes at least one of a piezoelectric semiconductor core, a thermoelectric semiconductor core, and an optoelectronic semiconductor core; and

[0011] The rare earth doped core is a SiO2 core layer doped with rare earth ions and co-doping substances; the rare earth ions are Er 3 + 、Yb 3+ 、 Tm 3+ and Ho 3+ The co-doped material is one or more of Al2O3, P2O5, CeO2, and Nb2O5.

[0012] As a further improvement of the present invention, the percentage concentration range of the rare earth ions is:

[0013] Yb2O3: 0.2~1.4mol%;

[0014] Er2O3: 0.02~0.1mol%;

[0015] Tm2O3: 0.05~0.5mol%;

[0016] Ho2O3: 0.02~0.1mol%;

[0017] The percentage solubility range of the co-doped substance is:

[0018] Al2O3: 1~15mol%;

[0019] P2O5: 1~13mol%;

[0020] CeO2: 1~6mol%;

[0021] Nb2O5:5~20mol%

[0022] As a further improvement of the present invention, the semiconductor material in the at least one pair of semiconductor cores is one or more of ZnO, CdTe, GaAs, ZnTe, Bi2Te3, SiGe, Si, and Ge.

[0023] As a further improvement of the present invention, the radial distance between the semiconductor fiber core and the surface of the rare-earth-doped fiber core is between 2 and 10 times the radius of the rare-earth-doped fiber core;

[0024] and / or

[0025] The diameter of the rare earth doped fiber core is 3 to 20 μm, and the diameter of the semiconductor fiber core is 10 to 50 μm;

[0026] and / or

[0027] The diameter of the optical fiber cladding is 100 to 400 μm, and the diameter of the optical fiber coating is 200 to 700 μm.

[0028] As a further improvement of the present invention, the quartz cladding contains at least two pairs of semiconductor cores of different types, and the interface spacing between two adjacent semiconductor cores of different semiconductor types is not less than 1 / 10 of the diameter of any semiconductor core.

[0029] Another aspect of the present invention provides a preform rod for preparing the semiconductor rare earth doped composite multi-core optical fiber, which comprises a quartz sleeve and a rare earth doped core rod embedded in the middle of the quartz sleeve;

[0030] The quartz sleeve is a prefabricated tubular structure or is formed by drilling a hole in the center of a quartz rod, and the rare earth doped core rod is embedded in the embedding hole in the middle of the sleeve; and

[0031] At least one pair of filling holes is formed on one end surface of the quartz sleeve along the axial direction of the sleeve; the two holes in each pair of filling holes are symmetrically arranged relative to the interlocking hole, and the two filling holes are respectively filled with the same semiconductor material;

[0032] The positions and sizes of the embedding holes and the filling holes in the quartz sleeve correspond to the positions and sizes of the rare-earth-doped cores and the semiconductor cores in the composite multi-core optical fiber, which is equivalent to the cross-sectional structure of the preform being magnified by the cross-sectional structure of the composite multi-core optical fiber at a specific ratio.

[0033] As a further improvement of the present invention, one end of the preform rod is tapered into a conical structure, and a vacuum plug is provided at the other end of the preform rod.

[0034] Another aspect of the present invention provides a method for preparing a semiconductor rare earth doped composite multi-core optical fiber, which is used for preparing the semiconductor rare earth doped composite multi-core optical fiber, and comprises the following steps:

[0035] S1: prepare rare earth doped core rod for standby use;

[0036] S2: According to the design parameters of the composite multi-core optical fiber, select the corresponding size of quartz sleeve or quartz rod;

[0037] A filling hole for embedding semiconductor material is formed in the axial direction on one end surface of the quartz sleeve; or an embedding hole for embedding a rare earth doped core rod is formed in the center of the quartz rod and filling holes for filling semiconductor material are formed on the periphery of the embedding hole;

[0038] S3: inserting the rare earth doped core rod into the central opening of the quartz sleeve or the quartz rod; at the same time, filling the corresponding filling hole with semiconductor material powder of the corresponding composition, or embedding the corresponding pressed semiconductor core rod into the corresponding filling hole;

[0039] S4: A vacuum plug is installed at one end of the quartz sleeve or quartz rod to close the holes and form an integral preform rod.

[0040] S5: The formed preform rod is placed on a fiber drawing tower and drawn at 1700-2000°C to produce a semiconductor rare earth doped composite multi-core optical fiber.

[0041] As a further improvement of the present invention, in step S1, the method for preparing the rare earth-doped core rod is:

[0042] A quartz tube of corresponding size is selected, and a mixed core rod of rare earth material and co-doped material is prepared in the quartz tube by MCVD method or PCVD method, and then the mixed core rod is corroded into corresponding size for standby use after preparation;

[0043] or

[0044] Pure SiO2 material, rare earth material and co-doped material are processed into multi-component glass core rods through a melt quenching process, and then polished into corresponding sizes for use.

[0045] Another aspect of the present invention provides an optical fiber device, which includes the semiconductor rare earth doped composite multi-core optical fiber.

[0046] The above-mentioned improved technical features can be combined with each other as long as they do not conflict with each other.

[0047] In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:

[0048] (1) The semiconductor rare earth doped composite multi-core optical fiber of the present invention comprises a rare earth doped core located in the middle and a quartz cladding arranged on the periphery thereof, wherein at least one pair of semiconductor cores is arranged in the quartz cladding, and the two cores in each pair of semiconductor cores are symmetrically arranged with respect to the rare earth doped cores. By utilizing the combination of rare earth ions and co-doped substances in the rare earth doped cores, and the corresponding optimization of semiconductor materials in the semiconductor cores, the composite multi-core optical fiber has both the gain function of the rare earth doped optical fiber and the sensing function of the semiconductor optical fiber, and provides conditions for the integration of multiple sensing functions in multiple composite multi-core optical fibers, effectively improving the functionality of the composite optical fiber, realizing real-time gain control of the composite optical fiber, and greatly improving the control response rate of the composite optical fiber.

[0049] (2) The semiconductor rare earth doped composite multi-core optical fiber of the present invention can effectively increase the doping concentration of rare earth ions in the optical fiber by preferably setting the types and contents of rare earth doping elements and co-doping substances, prevent the occurrence of ion clustering, avoid the increase in loss caused by optical fiber crystallization, and effectively improve the gain function of the composite multi-core optical fiber.

[0050] (3) The semiconductor rare earth doped composite multi-core optical fiber of the present invention effectively ensures the normal operation of the semiconductor core and the rare earth doped core by optimizing the core spacing between the semiconductor core and the rare earth doped core, avoiding the mutual influence between the two, and providing a guarantee for the geometric dimension design of the composite multi-core optical fiber.

[0051] (4) The preform rod of the semiconductor rare earth doped composite multi-core optical fiber of the present invention has a simple structure and is easy to prepare. It can effectively meet the drawing preparation requirements of the semiconductor rare earth doped composite multi-core optical fiber, provide conditions for the preparation of the semiconductor rare earth doped composite multi-core optical fiber, and effectively ensure the reliability and accuracy of the composite optical fiber drawing and forming.

[0052] (5) The method for preparing the semiconductor rare earth doped composite multi-core optical fiber of the present invention has simple steps and is easy to operate. By making the rare earth doped core rod and the preform rod in correspondence and optimizing the drawing conditions, the semiconductor rare earth doped glass composite optical fiber can be quickly prepared, thereby improving the efficiency and quality of the composite optical fiber preparation.

[0053] (6) The semiconductor rare earth doped composite multi-core optical fiber of the present invention can realize the reliable combination of rare earth materials and semiconductor materials in the optical fiber, so that the optical fiber has both gain function and can meet the needs of thermoelectric, piezoelectric and / or photoelectric conversion, effectively improving the functionality of the composite optical fiber, improving the composite optical fiber's ability to sense changes in environmental conditions and increasing its response rate, thereby improving the functionality of the composite optical fiber, and having good practical value and application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0055] Figure 1 Schematic diagram of the cross-sectional structure of the semiconductor rare earth doped composite multi-core optical fiber in Example 1 of the present invention;

[0056] Figure 2 Schematic diagram of the cross-sectional structure of the semiconductor rare earth doped composite multi-core optical fiber in Example 2 of the present invention;

[0057] Figure 3 Schematic diagram of the cross-sectional structure of the semiconductor rare earth doped composite multi-core optical fiber in Example 3 of the present invention;

[0058] Figure 4 Schematic diagram of the cross-sectional structure of the semiconductor rare earth doped composite multi-core optical fiber in Example 4 of the present invention;

[0059] Figure 5 Schematic diagram of the cross-sectional structure of the semiconductor rare earth doped composite multi-core optical fiber in Example 5 of the present invention;

[0060] Figure 6 Schematic diagram of a semiconductor rare earth doped composite multi-core optical fiber preform according to an embodiment of the present invention;

[0061] Figure 7 Schematic diagram of the application of a composite multi-core optical fiber in an optical fiber device according to an embodiment of the present invention;

[0062] In all the drawings, the same reference numerals represent the same technical features, specifically:

[0063] 1. Composite multi-core optical fiber; 101. Rare earth-doped fiber core; 102. First semiconductor fiber core; 103. Second semiconductor fiber core; 104. Third semiconductor fiber core; 1041. Ge material core; 1042. Si material core; 105. Silica cladding; 106. Coating layer.

[0064] 2. Preform rod; 201. Quartz sleeve; 202. Rare earth doped core rod; 203. Filling hole; 204. Semiconductor material; 205. Vacuum plug. DETAILED DESCRIPTION

[0065] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

[0066] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0067] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0068] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0069] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0070] Example:

[0071] See also Figures 1 to 5 The semiconductor rare-earth-doped composite multi-core optical fiber 1 in a preferred embodiment of the present invention comprises a central rare-earth-doped core 101 and a silica cladding 105 surrounding the rare-earth-doped core 101. At least one pair of semiconductor cores is disposed within the silica cladding 105. The coexistence of the rare-earth-doped core 101 and the semiconductor cores allows for both gain modulation and environmental sensing functions to be implemented within the composite optical fiber, effectively avoiding the dramatic increase in optical fiber loss that would otherwise occur if the two materials were directly mixed.

[0072] Specifically, the quartz cladding 105 of the semiconductor rare-earth-doped composite multi-core optical fiber 1 in the preferred embodiment includes multiple core layers, namely, a rare-earth-doped core 101 located in the middle and at least one pair of semiconductor cores arranged on both sides of the rare-earth-doped core 101. The rare-earth-doped core 101 and each semiconductor core are separated by the quartz cladding 104 and are arranged independently of each other to avoid interference and influence between them.

[0073] In more detail, the rare earth doped core 101 in the preferred embodiment is a SiO2 core layer doped with rare earth ions and co-doping substances, which serves as the gain medium layer of the composite multi-core optical fiber and can amplify the input signal light or generate laser output by absorbing pump light. In the preferred embodiment, the rare earth doped core 101 is composed of pure SiO2 glass or multi-component glass doped with rare earth ions, wherein the doped rare earth ions are preferably Er 3+ 、Yb 3+ 、 Tm 3+ and Ho 3+ One or more of them can act as activated ions to play a gain role in the composite optical fiber.

[0074] At the same time, in order to increase the doping concentration of rare earth ions in the optical fiber, in a preferred embodiment, one or more of Al2O3, P2O5, CeO2, and Nb2O5 are also co-doped into the rare earth-doped core 101. The introduction of co-doped substances can prevent ion clustering and avoid increased losses caused by optical fiber crystallization.

[0075] In actual doping, the rare earth ions and co-doping materials are doped in the form of oxide doping. The percentage concentration range of each rare earth doping material in the fiber core is preferably as follows:

[0076] Yb2O3: 0.2~1.4mol%;

[0077] Er2O3: 0.02~0.1mol%;

[0078] Tm2O3: 0.05~0.5mol%;

[0079] Ho2O3: 0.02~0.1mol%;

[0080] The percentage solubility range of each co-doped substance is preferably as follows:

[0081] Al2O3: 1~15mol%;

[0082] P2O5: 1~13mol%;

[0083] CeO2: 1~6mol%;

[0084] Nb2O5: 5~20mol%.

[0085] More specifically, during the actual doping process, the rare earth dopant can be one or more of the aforementioned rare earth dopant materials, and the co-doping material can also be one or more of the aforementioned rare earth dopant materials. Accordingly, in addition to the rare earth dopant and the co-doping material, the remaining basic dopant is SiO2.

[0086] Furthermore, in actual configuration, the diameter of the composite multi-core optical fiber 1 is preferably 100-400 μm, and the diameter of the rare-earth-doped core 101 is preferably 3-20 μm.

[0087] More specifically, in the preferred embodiment, the silica cladding 105 is further provided with at least one pair of semiconductor cores corresponding to the rare-earth-doped core 101. In practice, the rare-earth-doped core 101 is positioned at the center of the composite multi-core optical fiber 1, while the two semiconductor cores in each pair are located on either side of the rare-earth-doped core 101 and are symmetrically arranged around the rare-earth-doped core 101. Furthermore, in the preferred embodiment, the semiconductor cores may comprise one or more of the following: ZnO, CdTe, GaAs, ZnTe, Bi2Te3, SiGe, Si, and Ge, primarily serving the purpose of signal conversion and sensing.

[0088] It should be noted that each pair of semiconductor cores is arranged symmetrically relative to the rare-earth-doped core 101 because, in an optical fiber, slight unevenness and asymmetry can cause changes in the optical fiber's polarization state. Therefore, to ensure the symmetry of the stress field on the end face of the rare-earth-doped core 101 and the stability of the polarization state and mode of the signal light when transmitting in the rare-earth-doped core 101, each pair of semiconductor cores in the preferred embodiment is symmetrically arranged outside the rare-earth-doped core 101. A more preferred arrangement is a centrosymmetric structure, meaning that the centers of the two semiconductor cores are coplanar with the center of the rare-earth-doped core 101, and the distances from the centers of the two semiconductor cores to the center of the rare-earth-doped core 101 are equal.

[0089] More specifically, to maintain the waveguide structure of rare-earth-doped core 101 and prevent interaction between the cores, a certain distance should be maintained between the semiconductor core and the rare-earth-doped core 101. In a preferred embodiment, the distance between the center of each semiconductor core and the center of rare-earth-doped core 101 is no less than (semiconductor core radius + 3 times the radius of rare-earth-doped core 101). In other words, the radial distance between the surface of the semiconductor core and the surface of the rare-earth-doped core 101 is no less than 2 times the radius of the rare-earth-doped core 101.

[0090] Preferably, the radial distance between the surface of the semiconductor fiber core and the surface of the rare-earth-doped fiber core 101 is between 2 and 10 times the radius of the rare-earth-doped fiber core 101 .

[0091] Of course, in actual configuration, the distance between the semiconductor core and the rare-earth-doped core 101 cannot be too large, otherwise it will affect the geometric design of the optical fiber. Therefore, in a preferred embodiment, the radial distance between the semiconductor core and the surface of the rare-earth-doped core 101 is further preferably between 2 and 5 times the radius of the rare-earth-doped core 101.

[0092] Furthermore, in a preferred embodiment, the semiconductor cores disposed in the quartz cladding 105 may comprise multiple pairs of the same type of semiconductor material, such as two pairs of semiconductor cores comprising optoelectronic semiconductor materials. Furthermore, the multiple pairs of semiconductor cores in the quartz cladding 105 may comprise different types of semiconductor materials, such as a pair of optoelectronic semiconductor cores and a pair of piezoelectric semiconductor cores, or three types of semiconductor cores.

[0093] In an actual configuration, each pair of semiconductor cores in the quartz cladding 105 is centrally symmetrical about the rare-earth-doped core 101. Furthermore, in an actual configuration, the diameters of the semiconductor cores of different types can be the same or different, and the core spacings between the different types of semiconductor cores and the rare-earth-doped core 101 can be the same.

[0094] During the drawing process, the optical fiber experiences a thermal history from high temperature to room temperature. The difference in thermal expansion coefficients between the semiconductor material and the quartz glass causes residual stress in the optical fiber. At the same time, the distance from the stress area to the core directly affects the refractive index of the core. Therefore, in actual settings, considering the differences in working characteristics and thermal expansion coefficients of different semiconductor materials, different semiconductor cores generate different stresses in the optical fiber. Accordingly, the core spacing between different types of semiconductor cores and the rare earth doped core 101 can be the same or different, and the generated birefringence is preferably within 10 -4 ~10 -3 between.

[0095] In a preferred embodiment, the above-mentioned birefringence ∆ β The calculation formula is preferably as follows:

[0096]

[0097] Where, C is the photoelastic coefficient, E is the elastic modulus, μ is Poisson's ratio, ε is the shape variable, R is the semiconductor core radius, d is the core distance between the semiconductor fiber core and the rare earth doped fiber core 101, b is the diameter of the rare earth-doped fiber core 101.

[0098] To prevent interference between two different semiconductor cores, the interface (surface) spacing between two adjacent pairs of different semiconductor cores is no less than 1 / 10 of the diameter of either semiconductor core. Furthermore, the interface spacing is preferably no less than 5 μm.

[0099] Furthermore, in actual configuration, the diameter of the semiconductor core is preferably 10 to 50 μm.

[0100] By aligning the semiconductor cores within the quartz cladding 105, the composite multi-core optical fiber can achieve both gain output requirements and timely sensing of changing environmental conditions. Furthermore, the optimized structural design and corresponding optimization of the structural parameters of the composite multi-core optical fiber 1 effectively prevent mutual interference between different core types and increase in fiber loss, truly achieving the integration of environmental sensing and gain modulation functions.

[0101] Further preferably, to enhance the strength of the composite multi-core optical fiber 1 after fabrication, a coating layer 106 is preferably applied to the outer surface of the quartz cladding 105. The coating thickness is preferably 1.5 to 3 times the outer diameter of the quartz cladding 105, ensuring sufficient coating thickness for better protection. For example, in a preferred embodiment, the diameter of the quartz cladding 105 is 100 to 400 μm. In this case, the thickness of the coating layer 106 is preferably 200 to 700 μm.

[0102] For the semiconductor rare earth doped composite multi-core optical fiber in the preferred embodiment, it is prepared by drawing a specially designed preform rod.

[0103] Therefore, as another aspect of the present invention, a preform rod 2 suitable for the preparation of the aforementioned semiconductor rare earth doped composite multi-core optical fiber drawing is preferably proposed, which is as follows Figure 6 As shown in .

[0104] Specifically, the preform 2 in the preferred embodiment comprises a quartz sleeve 201 of a predetermined outer diameter and a rare-earth-doped core rod 202 coaxially embedded within the quartz sleeve 201. The ratio of the diameter (outer diameter) of the quartz sleeve 201 to the diameter of the rare-earth-doped core rod 202 is equal to the ratio of the outer diameter of the quartz cladding 105 to the diameter of the rare-earth-doped core 101 in the semiconductor rare-earth-doped composite multi-core optical fiber 1. The wall thickness of the quartz sleeve 201 is preferably 4 to 99 times the diameter of the rare-earth-doped core 101.

[0105] At the same time, at one end of the quartz sleeve 201, at least one pair of filling holes 203 is defined along its axial direction for filling the quartz sleeve 201 with semiconductor material 204. In practice, the locations of the filling holes 203 correspond to the locations of the semiconductor cores within the composite multi-core optical fiber 1. Specifically, the ratio of the distance between the center of the filling hole 203 and the center of the quartz sleeve 201 to the outer diameter of the quartz sleeve 201 is equal to the ratio of the distance between the corresponding semiconductor core and the center of the optical fiber to the outer diameter of the optical fiber. Similarly, the dimensions of each filling hole 203 and the distance between adjacent semiconductor cores within the multiple pairs of semiconductor cores are also determined in the same manner as described above and are not further elaborated here.

[0106] Furthermore, the filling hole 203 in the preferred embodiment is closed at one end and open at the other, with the semiconductor material 204 being filled from the open end. In practice, the filling hole 203 can be drilled as a blind hole upon creation, or initially drilled as a through hole and then sealed during the tapering process of the preform 2. A vacuum plug 205 is provided at the open end of the filling hole 203 in the preferred embodiment to seal the filling hole 203 after the semiconductor material 204 is filled, thereby forming a monolithic preform 2 structure.

[0107] As another preferred solution for preparing the preform 2, a quartz rod of a certain size can be used in place of the aforementioned quartz sleeve 201. A coaxial hole can be formed in the center of the quartz rod to form a receiving hole for the rare-earth-doped core rod 202. In this case, the quartz rod with the central receiving hole can essentially be considered a quartz sleeve 201 with a central hole. Subsequently, corresponding filling holes 203 are sequentially formed around the periphery of the central receiving hole.

[0108] During the actual hole-drilling operation, due to the influence of processing conditions or other factors, there may be certain deviations in the inner diameter of each hole or the size of the distance from the center. Therefore, during actual processing, it should be ensured that the difference in the distance between the center of each hole and the center of the quartz sleeve 201 or the quartz rod is no more than 0.05 mm, and the difference in the diameter of the symmetrical holes used to embed the same pair of semiconductor fiber cores is no more than 0.02 mm.

[0109] Furthermore, the rare earth-doped core rod 202 of the preferred embodiment is preferably prepared in at least two ways. The first method involves preparing a glass core rod containing a rare earth dopant and a co-doping material in a quartz tube of a certain size using MCVD or PCVD. The second method involves processing pure SiO2 material, a rare earth material, and a co-doping material into a multi-component glass core rod through a melt-quenching process, which is then polished to a certain size for later use.

[0110] Accordingly, the arrangement of the semiconductor fiber core in the preform rod 2 can be achieved by filling the semiconductor material 204 , or by pressing the semiconductor material 204 into a semiconductor core rod and then inserting it into the corresponding filling hole 203 .

[0111] After the preparation of the preform rod 2 is completed, the preform rod 2 is placed on an optical fiber drawing tower, and corresponding process parameters are selected to complete the drawing of the composite multi-core optical fiber.

[0112] As another aspect of the present invention, a method for preparing the composite multi-core optical fiber 1 is also disclosed, which preferably includes the following steps:

[0113] S1: Preparation of rare earth doped core rod;

[0114] In a preferred embodiment, the method for preparing the rare earth doped core rod is preferably the MCVD method or the PCVD method, which is achieved by selecting a quartz tube of corresponding size, and preparing a mixed core rod of rare earth material and co-doped material in the quartz tube by the aforementioned method, and then corroding it into the corresponding size for standby use after preparation.

[0115] In another preferred embodiment, the rare earth doped core rod is preferably prepared by processing pure SiO2 material, rare earth material, and co-doped material into a multi-component glass core rod through a melt quenching process, and then polishing the core rod into a certain size for use.

[0116] S2: Select a quartz sleeve 201 or a quartz rod of corresponding size based on the design parameters of the composite multi-core optical fiber 1; define an axial filling hole for embedding a semiconductor material on one end face of the quartz sleeve 201; or define an embedding hole for embedding a rare-earth-doped core rod and a filling hole for filling a semiconductor material in the center and the peripheral area of ​​the quartz rod.

[0117] In a preferred embodiment, the opened filling holes are preferably subjected to processes such as polishing and cleaning, which will not be described in detail here.

[0118] S3: inserting the prepared rare earth doped core rod into the central opening of the quartz sleeve 201 or the quartz rod; at the same time, filling the corresponding filling hole with semiconductor material powder of the corresponding composition, or embedding the corresponding pressed semiconductor core rod into the corresponding filling hole;

[0119] S4: a vacuum plug is provided at one end of the quartz sleeve 201 or the quartz rod to seal the filling holes, thereby forming an integral preform rod 2;

[0120] Preferably, the end of the quartz sleeve 201 or the quartz rod facing away from the vacuum plug is subjected to a taper process, so that one end of the preform rod 2 is drawn into a tapered structure;

[0121] Of course, in actual settings, the taper operation of the quartz sleeve 201 or one end of the quartz rod can be performed after the filling of the filling hole is completed, or after the filling hole is opened in step S2, which will not be described in detail here.

[0122] S5: placing the preform rod 2 on an optical fiber drawing tower, and drawing the preform rod at 1700-2000° C. to produce a semiconductor rare earth doped composite multi-core optical fiber.

[0123] To ensure the semiconductor fiber core is as uniform as possible, the drawing process in S5 must be maintained at a high temperature to ensure full melting of the semiconductor material, thus achieving secondary homogenization. Furthermore, due to the significant difference in expansion coefficient between the semiconductor material and the quartz material, the bare fiber is preferably subjected to a heat-insulating annealing treatment during the fiber drawing process in S5 to reduce residual stress in the composite multi-core optical fiber 1 and thereby improve its strength. In actual settings, the holding furnace temperature is controlled between 800°C and 1000°C, preferably at 900°C.

[0124] Further preferably, after the composite multi-core optical fiber 1 is drawn and formed, a protective layer, ie, a coating layer 106 , is coated on its periphery to enhance the strength of the optical fiber.

[0125] As another aspect of the present invention, an optical fiber device is also provided, wherein the gain medium and the sensing medium of the optical fiber device are the semiconductor rare earth doped composite multi-core optical fiber prepared above.

[0126] In order to better explain and illustrate the technical solution of the present invention, the technical solution of the present invention is further illustrated by three specific embodiments as follows. Specific embodiment 1:

[0128] In this embodiment, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and two first semiconductor cores 102 disposed in a silica cladding 105. The rare-earth-doped core 101 is doped with Al2O3, P2O5, and Yb2O3, with dopant concentrations of 0.25 mol% for Yb2O3, 2.5 mol% for Al2O3, and 2.0 mol% for P2O5. The semiconductor material included in the first semiconductor core 102 is Bi2Te3.

[0129] In this embodiment, the preparation process of the composite multi-core optical fiber 1 is preferably as follows:

[0130] S1. Prepare rare earth doped core rods doped with Al2O3, P2O5 and Yb2O3 using MCVD or PCVD platform process;

[0131] S2. Select a quartz sleeve 201 of appropriate size and stretch the prepared rare earth-doped core rod doped with Al2O3, P2O5, and Yb2O3 into a solid rod of a certain size. Then, according to the cross-sectional structure designed for the composite multi-core optical fiber 1, two identical filling holes are drilled symmetrically with the center of the solid rod in the solid rod, and one end of the solid rod is tapered and cleaned.

[0132] S3, filling the polished filling hole with Bi2Te3 semiconductor powder; or, inserting a pressed Bi2Te3 semiconductor core rod into the polished filling hole, and providing a matching vacuum plug at one end of the opening of the filling hole, thereby forming a preform rod 2;

[0133] S4. The preform rod 2 is placed on a fiber drawing tower and is drawn into an optical fiber at a high temperature of 1700°C. The drawn optical fiber is annealed in a 900°C holding furnace. Finally, a protective layer is coated on the surface of the optical fiber to improve the strength of the optical fiber.

[0134] The semiconductor rare earth doped composite multi-core optical fiber prepared by the above method has an end face structure as follows: Figure 1 As shown in .

[0135] In this case, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and a silica cladding 105 surrounding the rare-earth-doped core 101. A pair of first semiconductor cores 102 are symmetrically arranged within the silica cladding 105 relative to the rare-earth-doped core 101. The optical fiber diameter (excluding the coating) is 125 μm, and the intercore spacing between the semiconductor core and the rare-earth-doped core 101 is 30 μm. The rare-earth-doped core 101 is a co-doped core of Al2O3, P2O5, and Yb2O3, with a diameter of 10 μm. The first semiconductor core 102 is a Bi2Te3 semiconductor core with a diameter of 20 μm and exhibits a thermoelectric effect. The resulting composite multi-core optical fiber can be used to fabricate optical fiber devices that respond to ambient temperature. Specific embodiment 2:

[0137] In this embodiment, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and two second semiconductor cores 103 disposed in a silica cladding 105. The rare-earth-doped core 101 is doped with P2O5, Yb2O3, and Er2O3, with concentrations of Yb2O3 being 1.2 mol%, Er2O3 being 0.05 mol%, and P2O5 being 12.0 mol%. The semiconductor material included in the second semiconductor cores 103 is ZnTe.

[0138] In this embodiment, the preparation process of the composite multi-core optical fiber 1 is preferably as follows:

[0139] S1. Prepare rare earth doped core rods doped with P2O5, Yb2O3 and Er2O3 using MCVD or PCVD platform process;

[0140] S2. Select a quartz rod of appropriate size. According to the cross-sectional structure of the composite multi-core optical fiber 1, drill a center hole in the center of the quartz rod to serve as the embedding hole for embedding the rare-earth-doped core rod. Drill two additional filling holes with axes parallel to the axis of the embedding hole symmetrically around the embedding hole. After the holes are drilled, taper one end of the quartz rod and clean it.

[0141] S3. Etching a rare earth-doped core rod to a corresponding radius, cleaning it, and then embedding it into the embedding hole in the center of the quartz rod; simultaneously, filling the polished filling hole with ZnTe semiconductor powder; alternatively, inserting a pressed ZnTe semiconductor core rod into the polished filling hole, and placing a matching vacuum plug at one end of the opening of the filling hole, thereby forming a preform rod 2;

[0142] S4. The preform rod 2 is placed on a fiber drawing tower and is drawn into an optical fiber at a high temperature of 1900°C. The drawn optical fiber is annealed in a 900°C holding furnace and finally a protective layer is coated on the surface of the optical fiber to improve the strength of the optical fiber.

[0143] The semiconductor rare earth doped composite multi-core optical fiber prepared by the above method has an end face structure as follows: Figure 2 As shown in .

[0144] In this case, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and a silica cladding 105 surrounding the rare-earth-doped core 101. A pair of second semiconductor cores 103 are symmetrically arranged within the silica cladding 105 relative to the rare-earth-doped core 101. The optical fiber diameter (excluding the coating) is 130 μm, and the intercore spacing between the semiconductor core and the rare-earth-doped core 101 is 20 μm. The rare-earth-doped core 101 is a co-doped core of P2O5, Yb2O3, and Er2O3, with a diameter of 3 μm. The second semiconductor core 103 is a ZnTe semiconductor core with a diameter of 10 μm and exhibits a piezoelectric effect. The resulting composite multi-core optical fiber can be used to fabricate optical fiber devices that respond to environmental pressure. Specific embodiment 3:

[0146] In this embodiment, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and two pairs of third semiconductor cores 104 disposed in a silica cladding 105 .

[0147] Among them, the matrix material of the rare earth doped fiber core 101 is SiO2, and on this basis it is doped with Al2O3, Nb2O5, Tm2O3 and Ho2O3, wherein the concentration of each dopant is as follows: SiO2 is 64.77mol%, Nb2O5 is 20.0mol%, Al2O3 is 15.0mol%, Tm2O3 is 0.2mol%, and Ho2O3 is 0.03mol%.

[0148] The third semiconductor fiber core 104 includes two pairs of semiconductor fibers arranged at 90° intervals, such as Figure 3 The Ge material core 1041 and the Si material core 1042 shown in FIG. 1 are each composed of two pairs of cores disposed on either side of the rare earth doped core 101. In other words, the four third semiconductor cores 104 are disposed at intervals of 90°.

[0149] In this embodiment, the preparation process of the composite multi-core optical fiber 1 is preferably as follows:

[0150] S1. Prepare a multi-component glass core rod composed of SiO2, Al2O3, Nb2O5, Tm2O3 and Ho2O3 by a melt quenching process, and polish it into a rare earth doped core rod of a certain size for use;

[0151] S2. Select a quartz rod of appropriate size. According to the cross-sectional structure designed for the composite multi-core optical fiber 1, drill a center hole in the center of the quartz rod to serve as the embedding hole for embedding the rare-earth-doped core rod. Drill four additional filling holes with axes parallel to the axis of the embedding hole symmetrically around the embedding hole. After each hole is drilled, polish it, taper one end of the quartz rod, and clean it for later use.

[0152] In a preferred embodiment, a line connecting the centers of the four filling holes forms a square, and the center of the square is exactly the center of the embedding hole.

[0153] S3. Clean the rare earth doped core rod and insert it into the embedding hole; at the same time, fill the polished corresponding filling holes with Ge and Si semiconductor powders respectively; or, insert the pressed Ge and Si semiconductor core rods into the polished corresponding filling holes, and install a matching vacuum plug at one end of the opening of the filling hole, thereby forming a preform rod 2;

[0154] S4. The preform rod 2 is placed on a fiber drawing tower and is drawn into an optical fiber at a high temperature of 1750°C. The drawn optical fiber is annealed in a 900°C holding furnace. Finally, a protective layer is coated on the surface of the optical fiber to improve the strength of the optical fiber.

[0155] The semiconductor rare earth doped composite multi-core optical fiber prepared by the above method has an end face structure as follows: Figure 3 As shown in .

[0156] In this case, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and a silica cladding 105 surrounding the rare-earth-doped core 101. Within the silica cladding 105, a pair of Ge cores 1041 and a pair of Si cores 1042 are symmetrically arranged relative to the rare-earth-doped core 101. The optical fiber diameter (excluding the coating) is 400 μm, and the intercore spacing between the semiconductor core and the rare-earth-doped core 101 is 50 μm. The rare-earth-doped core 101 is a co-doped core of SiO2, Al2O3, Nb2O5, Tm2O3, and Ho2O3, with a diameter of 20 μm. The third semiconductor core 104 is a Ge core and a Si core, both with a diameter of 40 μm, exhibiting a photoelectric effect. The resulting composite multi-core optical fiber can be used to fabricate optical fiber devices that respond to ambient light energy. Specific embodiment 4:

[0158] In this embodiment, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and two pairs of semiconductor cores disposed in a silica cladding 105 , namely, a pair of first semiconductor cores 102 and a pair of third semiconductor cores 104 .

[0159] The rare earth-doped core 101 includes dopants such as P2O5, CeO2, and Er2O3, with concentrations of Er2O3 being 0.05 mol%, CeO2 being 1.2 mol%, and P2O5 being 11.0 mol%. The first semiconductor core 102 includes Bi2Te3 as the semiconductor material, and the third semiconductor core 104 includes Ge as the semiconductor material.

[0160] In this embodiment, the preparation process of the composite multi-core optical fiber 1 is preferably as follows:

[0161] S1. Prepare rare earth doped core rods doped with P2O5, CeO2 and Er2O3 using MCVD or PCVD platform process;

[0162] S2. Select a quartz sleeve 201 of appropriate size, combine it with the prepared rare earth doped core rod co-doped with P2O5, CeO2 and Er2O3, and stretch it into a solid rod of a certain size. Then, according to the designed cross-sectional structure, four filling holes are drilled symmetrically around the center of the solid rod on the solid rod, and one end of the solid rod is tapered and cleaned.

[0163] S3, filling the filling hole with two semiconductor materials, and setting a matching vacuum plug at one end of the opening of the filling hole, thereby forming a preform rod 2;

[0164] During the actual filling process, both semiconductor materials can be filled using one of the following two methods: First, fill the semiconductor powder into the corresponding polished filling hole; Second, press the semiconductor material into a semiconductor core rod and insert it into the polished filling hole;

[0165] S4. The preform rod 2 is placed on a fiber drawing tower and is drawn into an optical fiber at a high temperature of 1750°C. The drawn optical fiber is annealed in a 900°C holding furnace. Finally, a protective layer is coated on the surface of the optical fiber to improve the strength of the optical fiber.

[0166] The semiconductor rare earth doped composite multi-core optical fiber prepared by the above method has an end face structure as follows: Figure 4 As shown in .

[0167] At this time, the composite multi-core optical fiber 1 includes a rare earth doped core 101 and a silica cladding 105 covering the outer periphery of the rare earth doped core 101 . A pair of first semiconductor cores 102 and a pair of third semiconductor cores 104 are symmetrically arranged in the silica cladding 105 relative to the rare earth doped core 101 .

[0168] Among them, the optical fiber diameter (excluding the coating layer) is 125μm, the core spacing between the semiconductor fiber core and the rare-earth-doped fiber core 101 is 10μm, and the rare-earth-doped fiber core 101 is a P2O5, CeO2 and Er2O3 co-doped fiber core, and its diameter is 3μm; the diameters of the first semiconductor fiber core 102 and the third semiconductor fiber core 104 are both 10μm, the first semiconductor fiber core 102 has a thermoelectric effect, and the third semiconductor fiber core 104 has a photoelectric effect. The composite multi-core optical fiber prepared can be used to prepare optical fiber devices that respond to ambient light energy and temperature. Specific embodiment 5:

[0170] In this embodiment, the composite multi-core optical fiber 1 includes a rare-earth-doped core 101 and three pairs of semiconductor cores disposed in a silica cladding 105 , namely, a pair of first semiconductor cores 102 , a pair of second semiconductor cores 103 , and a pair of third semiconductor cores 104 .

[0171] Among them, the matrix material of the rare earth doped fiber core 101 is SiO2, and on this basis it is doped with Al2O3, Nb2O5, Tm2O3 and Ho2O3, wherein the concentration of each dopant is as follows: SiO2 is 64.77mol%, Nb2O5 is 20.0mol%, Al2O3 is 15.0mol%, Tm2O3 is 0.2mol%, and Ho2O3 is 0.03mol%.

[0172] In this embodiment, the semiconductor materials used for the three semiconductor fiber cores are Si, ZnTe and Bi2Te3, respectively. The angles between two adjacent pairs of semiconductor fiber cores are preferably the same, that is, they are arranged 60° apart from each other. At the same time, the core spacing between each semiconductor fiber core and the rare-earth-doped fiber core 101 is preferably the same, that is, the center of each semiconductor fiber core is preferably on a concentric circle with the center of the rare-earth-doped fiber core 101 as the center.

[0173] In this embodiment, the preparation process of the composite multi-core optical fiber 1 is preferably as follows:

[0174] S1. Prepare a multi-component glass core rod composed of SiO2, Al2O3, Nb2O5, Tm2O3 and Ho2O3 by a melt quenching process, and polish it into a rare earth doped core rod of a certain size for use;

[0175] S2. Select a quartz rod of appropriate size. According to the cross-sectional structure designed for the composite multi-core optical fiber 1, drill a center hole in the center of the quartz rod to serve as the embedding hole for embedding the rare-earth-doped core rod. Six additional filling holes are drilled with the embedding hole as the symmetrical center, with the axes parallel to the axis of the embedding hole. The line connecting the centers of the six filling holes forms a regular hexagon with the center of the embedding hole as the center. After the holes are drilled, polish them, taper one end of the quartz rod, and clean it for later use.

[0176] S3. Clean the rare earth doped core rod and insert it into the embedding hole. Simultaneously, fill the filling hole with the three semiconductor materials and install a matching vacuum plug at one end of the opening of the filling hole to form a preform rod 2.

[0177] During the actual filling process, the three semiconductor materials can be filled using one of the following two methods: First, fill the semiconductor powder into the corresponding polished filling hole; Second, press the semiconductor material into a semiconductor core rod and insert it into the polished filling hole;

[0178] S4. The preform rod 2 is placed on a fiber drawing tower and is drawn into an optical fiber at a high temperature of 1850°C. The drawn optical fiber is annealed in a 900°C holding furnace. Finally, a protective layer is coated on the surface of the optical fiber to improve the strength of the optical fiber.

[0179] The semiconductor rare earth doped composite multi-core optical fiber prepared by the above method has an end face structure as follows: Figure 5 As shown in .

[0180] At this time, the composite multi-core optical fiber 1 includes a rare earth-doped core 101 and a quartz cladding 105 covering the outer periphery of the rare earth-doped core 101. In the quartz cladding 105, a pair of Si material cores, a pair of ZnTe material cores, and a pair of Bi2Te3 material cores are symmetrically arranged relative to the rare earth-doped core 101.

[0181] Among them, the optical fiber diameter (excluding the coating layer) is 400μm, the core spacing between the semiconductor fiber core and the rare-earth doped fiber core 101 is 60μm, and the rare-earth doped fiber core 101 is a SiO2, Al2O3, Nb2O5, Tm2O3 and Ho2O3 co-doped fiber core, and its diameter is 20μm; the diameter of the three semiconductor fiber cores is 50μm, and they have thermoelectric effect, piezoelectric effect and photoelectric effect respectively. The prepared composite multi-core optical fiber can be used to prepare composite functional optical fiber devices that respond to ambient temperature, pressure and light energy.

[0182] For the semiconductor rare earth doped glass composite optical fibers in specific embodiments 1 to 5, the functions of the materials and devices used are as follows:

[0183]

[0184] The semiconductor rare earth doped composite multi-core optical fiber of the present invention can realize the reliable recombination of rare earth materials and semiconductor materials in the optical fiber, so that the optical fiber has both gain function and can meet the requirements of thermoelectric, piezoelectric and / or photoelectric conversion, effectively improving the functionality of the composite optical fiber, improving the composite optical fiber's ability to sense changes in environmental conditions and increasing its response rate, thereby improving the functionality of the composite optical fiber, and having good practical value and application prospects.

[0185] It will be easily understood by those skilled in the art that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A semiconductor rare earth doped composite multi-core optical fiber, characterized in that: It comprises a rare earth doped fiber core located in the middle and a quartz cladding arranged around the outer periphery of the rare earth doped fiber core; At least one pair of semiconductor cores is disposed in the quartz cladding; the two semiconductor cores in each pair of semiconductor cores are symmetrically disposed relative to the rare earth doped core; and The at least one pair of semiconductor cores includes at least one of a piezoelectric semiconductor core, a thermoelectric semiconductor core, and an optoelectronic semiconductor core; and The rare earth doped core is a SiO2 core layer doped with rare earth ions and co-doping substances; the rare earth ions are Er 3+ 、Yb 3 + 、 Tm 3+ and Ho 3+ One or more of; the co-doped material is one or more of Al2O3, P2O5, CeO2, Nb2O5; The semiconductor material in the at least one pair of semiconductor cores is one or more of ZnO, CdTe, GaAs, ZnTe, Bi2Te3, SiGe, Si, and Ge; and The radial distance between the surface of the semiconductor fiber core and the surface of the rare earth doped fiber core is not less than 2 times the radius of the rare earth doped fiber core.

2. The semiconductor rare earth doped composite multi-core optical fiber according to claim 1, characterized in that: The percentage concentration range of the rare earth ions is: Yb2O3: 0.2~1.4mol%; Er2O3: 0.02~0.1mol%; Tm2O3: 0.05~0.5mol%; Ho2O3: 0.02~0.1mol%; The percentage concentration range of the co-doped substance is: Al2O3: 1~15mol%; P2O5: 1~13mol%; CeO2: 1~6mol%; Nb2O5: 5~20mol%.

3. The semiconductor rare earth doped composite multi-core optical fiber according to claim 1, characterized in that: The radial distance between the semiconductor fiber core and the surface of the rare earth doped fiber core is between 2 and 10 times the radius of the rare earth doped fiber core; and / or The diameter of the rare earth doped fiber core is 3 to 20 μm, and the diameter of the semiconductor fiber core is 10 to 50 μm; and / or The diameter of the quartz cladding is 100-400 μm, and the diameter of the optical fiber coating is 200-700 μm.

4. The semiconductor rare earth doped composite multi-core optical fiber according to any one of claims 1 to 3, characterized in that The quartz cladding contains at least two pairs of semiconductor cores of different types, and the spacing between the interfaces of two adjacent semiconductor cores of different semiconductor types is not less than 1 / 10 of the diameter of any semiconductor core.

5. A preform rod for preparing the semiconductor rare earth doped composite multi-core optical fiber according to any one of claims 1 to 4, characterized in that: It comprises a quartz sleeve and a rare earth doped core rod embedded in the middle of the quartz sleeve; The quartz sleeve is a prefabricated tubular structure or is formed by drilling a hole in the center of a quartz rod, and the rare earth doped core rod is embedded in the embedding hole in the middle of the sleeve; and At least one pair of filling holes is formed on one end surface of the quartz sleeve along the axial direction of the sleeve; the two holes in each pair of filling holes are symmetrically arranged relative to the embedding hole, and the two holes in each pair of filling holes are respectively filled with the same semiconductor material; The positions and sizes of the embedding holes and the filling holes in the quartz sleeve correspond to the positions and sizes of the rare-earth-doped cores and the semiconductor cores in the composite multi-core optical fiber, which is equivalent to the cross-sectional structure of the preform being magnified by the cross-sectional structure of the composite multi-core optical fiber at a specific ratio.

6. The preform according to claim 5, characterized in that One end of the preform rod is tapered into a conical structure, and the other end of the preform rod is provided with a vacuum plug.

7. A method for preparing a semiconductor rare earth doped composite multi-core optical fiber, used for preparing the semiconductor rare earth doped composite multi-core optical fiber according to any one of claims 1 to 4, characterized in that: The steps include: S1: prepare rare earth doped core rod for standby use; S2: According to the design parameters of the composite multi-core optical fiber, select the corresponding size of quartz sleeve or quartz rod; A filling hole for embedding semiconductor material is formed in the axial direction on one end surface of the quartz sleeve; or an embedding hole for embedding a rare earth doped core rod is formed in the center of the quartz rod and filling holes for filling semiconductor material are formed on the periphery of the embedding hole; S3: inserting the rare earth doped core rod into the central opening of the quartz sleeve or the quartz rod; at the same time, filling the corresponding filling hole with semiconductor material powder of the corresponding composition, or embedding the corresponding pressed semiconductor core rod into the corresponding filling hole; S4: A vacuum plug is provided at one end of the quartz sleeve or the quartz rod to seal the holes, thereby forming an integral preform rod; S5: The formed preform rod is placed on a fiber drawing tower and drawn at 1700-2000°C to produce a semiconductor rare earth doped composite multi-core optical fiber.

8. The method for preparing a semiconductor rare earth doped composite multi-core optical fiber according to claim 7, characterized in that: In step S1, the preparation method of the rare earth doped core rod is: A quartz tube of corresponding size is selected, and a mixed core rod of rare earth material and co-doped material is prepared in the quartz tube by MCVD method or PCVD method, and then the mixed core rod is corroded into corresponding size for standby use after preparation; or Pure SiO2 material, rare earth material and co-doped material are processed into multi-component glass core rods through a melt quenching process, and then polished into corresponding sizes for use.

9. An optical fiber device, characterized in that: The optical fiber device comprises the semiconductor rare earth doped composite multi-core optical fiber according to any one of claims 1 to 4.

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