Vapor deposition apparatus and electrode plates

Abstract

This application relates to a vapor deposition apparatus and an electrode plate. The vapor deposition apparatus includes: a housing having a process chamber and an air inlet communicating therewith; and an electrode plate assembly including a first electrode plate and a second electrode plate. The first electrode plate divides the process chamber into a first chamber and a second chamber. The first electrode plate has a plurality of dispersion holes communicating with the first chamber and the second chamber. Each dispersion hole includes a connecting section and a first hole section successively distributed along its axial direction. The first hole section extends to the surface of the first electrode plate facing the second chamber. The connecting section is located at the end of the first hole section facing away from the second chamber. Along the axial direction, the diameter of the first hole section increases, and the diameter at the end facing the second chamber is larger than the diameter at the end facing away from the second chamber. The diameter of the connecting section is smaller than the diameter of the first hole section facing away from the second chamber. The vapor deposition apparatus provided in this application can rapidly and uniformly form plasma, thereby improving the uniformity of the film thickness.

Description

Technical Field

[0001] This application relates to the field of chemical vapor deposition, and in particular to a vapor deposition apparatus and electrode plate. Background Technology

[0002] In existing display panels, large-area, high-precision film deposition is often required. Based on this, PECVD (Plasma Enhanced Chemical Vapor Deposition) has been widely used due to its high film quality, low required temperature, and fast deposition rate. A PECVD apparatus includes a first electrode plate that mixes and discharges process gases to form plasma. During operation, the process gases pass through through-holes in the first electrode plate and diffuse and ionize, forming plasma clouds, which then react and deposit to form a film. However, existing first electrode plates have multiple through-holes spaced apart. Gases diffuse through these through-holes, creating conical dead zones between adjacent through-holes. The plasma in these dead zones is relatively sparse, resulting in uneven plasma density and a decrease in the uniformity of the deposited film thickness.

[0003] Therefore, there is an urgent need for a vapor deposition device and corresponding electrode plate that can improve the problem of uneven film thickness. Summary of the Invention

[0004] This application provides a vapor deposition apparatus and electrode plate that can form more uniform plasma clouds at a faster speed, thereby improving the uniformity of film formation.

[0005] In a first aspect, an embodiment of this application provides a vapor deposition apparatus, comprising: a housing having a process chamber and an air inlet communicating with the process chamber; an electrode assembly disposed in the process chamber, the electrode assembly including a first electrode plate and a second electrode plate spaced apart, the first electrode plate being connected to the housing and dividing the process chamber into a first chamber and a second chamber, the air inlet communicating with the first chamber, the second electrode plate being located in the second chamber, and the first electrode plate having a plurality of dispersion holes respectively communicating with the first chamber and the second chamber; wherein, the dispersion holes include connecting sections and first hole sections successively distributed along their own axial direction, the first hole sections extending to the surface of the first electrode plate facing the second chamber, the connecting sections being disposed at the end of the first hole sections facing away from the second chamber, and along the axial direction, the diameter of the first hole sections tending to increase, with the diameter of the hole section facing the second chamber being larger than the diameter of the hole section facing away from the second chamber, and the diameter of the connecting sections being smaller than the diameter of the hole section facing away from the second chamber.

[0006] According to one aspect of the embodiments of this application, the first hole segment includes a plurality of first sub-hole segments distributed sequentially along the axial direction. Among two adjacent first sub-hole segments, the minimum hole diameter of the first sub-hole segment closer to the second chamber is greater than or equal to the maximum hole diameter of the first sub-hole segment away from the second chamber.

[0007] According to one aspect of the embodiments of this application, the diameter of each first sub-hole segment near the end of the second chamber is larger than the diameter of the end away from the second chamber.

[0008] According to one aspect of the embodiments of this application, the radial dimension of the first sub-hole segment gradually increases along the axial direction.

[0009] According to one aspect of the embodiments of this application, the diameter of the hole is the same at all points along the axial direction of the connecting segment.

[0010] According to one aspect of the embodiments of this application, the dispersion hole further includes a second hole segment disposed axially on the side of the connecting section away from the first hole segment. The second hole segment extends to the surface of the first electrode plate facing the first chamber. Along the axial direction, the diameter of the second hole segment tends to increase, and the diameter of the hole at the end facing the first chamber is larger than the diameter of the hole at the end away from the first chamber.

[0011] According to one aspect of the embodiments of this application, the second hole segment includes a plurality of second sub-hole segments, wherein in two adjacent second sub-hole segments, the minimum hole diameter of the second sub-hole segment closer to the first chamber is greater than or equal to the maximum hole diameter of the second sub-hole segment away from the first chamber.

[0012] According to one aspect of the embodiments of this application, the diameter of each second sub-hole segment near the end of the first chamber is larger than the diameter of the end away from the first chamber.

[0013] According to one aspect of the embodiments of this application, the radial dimension of the second sub-hole segment gradually increases along the axial direction.

[0014] According to one aspect of the embodiments of this application, the second hole segment has the same structure as the first hole segment and is symmetrically arranged in the axial direction.

[0015] According to one aspect of the embodiments of this application, the aperture of the connecting segment is smaller than the minimum aperture of the second segment.

[0016] According to one aspect of the embodiments of this application, a plurality of dispersed holes are arranged in an array, wherein the minimum distance between any two adjacent dispersed holes is equal.

[0017] According to one aspect of the embodiments of this application, the first electrode plate further includes a plurality of supplementary holes that respectively connect the first chamber and the second chamber, and the supplementary holes are disposed between adjacent dispersion holes.

[0018] According to one aspect of the embodiments of this application, the diameter of the supplementary hole is 400μm to 800μm.

[0019] Secondly, embodiments of this application provide an electrode plate applied in a vapor deposition apparatus. The electrode plate has a first surface and a second surface disposed opposite to each other, and the electrode plate is provided with a plurality of dispersion holes penetrating the electrode plate in its own thickness direction. The dispersion holes include connecting segments and first hole segments distributed successively along their own axial direction. The first hole segment extends to the first surface, and the connecting segment is disposed at the end of the first hole segment away from the first surface. Along the axial direction, the hole diameter of the first hole segment tends to increase, and the hole diameter at the end closer to the first surface is larger than the hole diameter at the end away from the first surface. The hole diameter of the connecting segment is smaller than the hole diameter on the side of the first hole segment away from the first surface.

[0020] According to one aspect of the embodiments of this application, the dispersion hole further includes a second hole segment, which is disposed on the side of the connecting section away from the first hole segment and extends to the second surface; along the axial direction, the diameter of the second hole segment tends to increase and the diameter of the end near the second surface is larger than the diameter of the end away from the second surface.

[0021] The vapor deposition apparatus provided in this application embodiment has a process chamber and a first electrode plate and a second electrode plate disposed in the chamber. The first electrode plate divides the process chamber into a first chamber and a second chamber and is provided with a plurality of dispersion holes with gradually changing pore sizes in the thickness direction. When using this vapor deposition apparatus, the process gas flows from the first chamber to the second chamber through these dispersion holes. The pore size of the dispersion holes gradually increases in the first pore section located near the second chamber, allowing the gas passing through the hole to change its flow direction earlier and achieve sufficient diffusion. Furthermore, the pore size of the connecting section connected to the first pore section is smaller than the pore size of the first pore section near the connecting section, i.e., a pore size difference is formed at the boundary of the first pore section in the lower pore region. This forms a new discharge tip, increasing the contact area between the gas and the tip discharge, thereby increasing the plasma generation speed and allowing the plasma to cover a larger space. Therefore, the vapor deposition apparatus provided in this application embodiment can achieve better plasma diffusion distribution, thereby improving the uniformity of the film thickness. Attached Figure Description

[0022] The features, advantages, and technical effects of exemplary embodiments of this application will now be described with reference to the accompanying drawings.

[0023] Figure 1 This is a schematic diagram of the structure of the vapor deposition apparatus provided in the embodiments of this application;

[0024] Figure 2 This is a bottom view of the first electrode plate provided in one embodiment of this application;

[0025] Figure 3 yes Figure 2 Sectional view at point A-A';

[0026] Figure 4This is a cross-sectional view of the first electrode plate provided in another embodiment of this application;

[0027] Figure 5 This is a cross-sectional view of the first electrode plate provided in another embodiment of this application;

[0028] Figure 6 This is a cross-sectional view of the first electrode plate provided in another embodiment of this application;

[0029] Figure 7 This is a bottom view of the first electrode plate provided in another embodiment of this application;

[0030] Figure 8 yes Figure 7 Sectional view at point B-B';

[0031] Figure 9 This is a schematic diagram of the electrode plate provided in the embodiment of this application.

[0032] in:

[0033] 1000-Vacuum-phase deposition apparatus;

[0034] 100 - Housing; 200 - Electrode assembly;

[0035] 10 - Process cavity; 20 - Air inlet; 30 - First electrode plate; 40 - Second electrode plate; 50 - First surface; 60 - Second surface;

[0036] 11-First chamber; 12-Second chamber; 31-Dispersion hole; 32-Supplement hole;

[0037] 311-First hole segment; 312-Connecting segment; 313-Second hole segment; 314-First discharge tip; 315-Second discharge tip; 316-Third discharge tip; 317-Fourth discharge tip;

[0038] 311a - First sub-hole section; 313a - Second sub-hole section

[0039] X-axis.

[0040] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not drawn to scale. Detailed Implementation

[0041] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0042] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0043] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0044] The features and exemplary embodiments of various aspects of this application will now be described in detail. Furthermore, the features, structures, or characteristics described below may be combined in any suitable manner in one or more embodiments.

[0045] Thin-film fabrication processes are frequently used in the current field of large-scale integrated circuit manufacturing. Among these processes, PECVD (Plasma Enhanced Chemical Vapor Deposition) is widely used in optoelectronic device fabrication due to its advantages such as low deposition temperature, good film adhesion, and strong step coverage. A PECVD apparatus requires a pair of electrode plates, one of which can be grounded, while the other is connected to a high-frequency alternating current to excite a discharge at the electrode tip, thereby forming plasma. The electrode plate connected to the alternating current typically has a through-hole, allowing the process gas to pass through and enter the reaction chamber below for mixing and reaction.

[0046] Based on this, the inventors discovered that in existing PECVD equipment, the through holes in the electrode plate receiving the high-frequency current are typically multiple spaced straight through holes, meaning the axis of the holes is parallel to the thickness direction of the electrode plate. In this case, gas flowing through the through hole can only diffuse after completely passing through it, thus creating a roughly conical blind zone of a certain size between adjacent through holes, resulting in insufficient gas mixing. Furthermore, the electrode plate with straight through holes only forms a discharge tip at the edge of the hole on the gas outlet side, leading to a slower plasma formation rate.

[0047] To address the aforementioned issues, this application provides a vapor deposition apparatus and a corresponding electrode plate. The electrode plate assembly in the vapor deposition apparatus includes a first electrode plate connected to a radio frequency power supply. The dispersion holes in the first electrode plate have gradually increasing apertures, which can effectively improve the plasma formation rate and spatial distribution uniformity.

[0048] It is understood that, as an optional example, the following embodiments of this application are only illustrated by taking the vapor deposition apparatus provided in this application as an RF-PECVD (radio frequency enhanced plasma chemical vapor deposition) apparatus, but are not limited thereto, and can also be applied to other types of PECVD methods and protected thereto.

[0049] To better understand this application, the following will be combined with... Figures 1 to 9 The display module and display device according to the embodiments of this application will be described in detail.

[0050] Please refer to the following: Figures 1-3 , Figure 1 This is a schematic diagram of the structure of the vapor deposition apparatus provided in the embodiments of this application. Figure 2 This is a bottom view of the first electrode plate provided in one embodiment of this application. Figure 3 yes Figure 2A cross-sectional view at point A-A'. In a first aspect, according to an embodiment of this application, a vapor deposition apparatus 1000 is provided, comprising: a housing 100 and an electrode assembly 200, wherein the housing 100 has a process chamber 10 and an air inlet 20 communicating with the process chamber 10, and the electrode assembly 200 is disposed in the process chamber 10.

[0051] The electrode assembly 200 includes a first electrode 30 and a second electrode 40 spaced apart. The first electrode 30 is connected to the housing 100 and divides the process chamber 10 into a first chamber 11 and a second chamber 12. The air inlet 20 communicates with the first chamber 11. The second electrode 40 is located in the second chamber 12. The first electrode 30 is provided with a plurality of dispersion holes 31 that communicate with the first chamber 11 and the second chamber 12 respectively. The dispersion hole 31 includes a connecting section 312 and a first hole section 311 that are successively distributed along its own axial direction X. The first hole section 311 extends to the surface of the first electrode 30 facing the second chamber 12. The connecting section 312 is located at the end of the first hole section 311 away from the second chamber 12. Along the axial direction X, the diameter of the first hole section 311 increases, and the diameter of the end facing the second chamber 12 is larger than the diameter of the end away from the second chamber 12. The diameter of the connecting section 312 is smaller than the diameter of the first hole section 311 on the side away from the second chamber 12.

[0052] This application provides a vapor deposition apparatus 1000. A first electrode plate 30 and a second electrode plate 40 are disposed opposite each other within a housing 100 of the apparatus. The first electrode plate 30 is detachably connected to the housing 100 by means of snap-fit, fasteners, or fitting. The first electrode plate 30 divides the process cavity 10 formed by the housing 100 into two parts: a first chamber 11 and a second chamber 12. The first chamber 11 is connected to an air inlet 20, and the second chamber 12 is provided with the opposing second electrode plate 40. A plurality of dispersion holes 31 are spaced apart in the first electrode plate 30, and the first chamber 11 and the second chamber 12 are interconnected through these dispersion holes 31.

[0053] In using the vapor deposition apparatus 1000 provided in this application embodiment, the first substrate 30 can be electrically connected to the radio frequency power supply, and the second electrode 40 can be grounded to form an electric field between the two electrodes. At the same time, the process gas controlled by the mass flow controller is input through the inlet 20 into the first chamber 11, and then enters the second chamber 12 through the dispersion hole 31 in the first electrode 30. The process gas is rapidly ionized in the second chamber 12 by the radio frequency alternating voltage provided by the radio frequency power supply to form plasma, and finally reacts and forms a film in the plasma environment.

[0054] In this embodiment, the first electrode plate 30 is provided with a plurality of dispersion holes 31 for the process gas to pass through. These dispersion holes 31 have multiple segments with different diameters along their own axial direction X. First, the dispersion holes 31 include a first segment 311 and a connecting segment 312 connected along the axial direction X. The first segment 311 extends to the surface of the first electrode plate 30 near the second chamber 12, that is, a first discharge tip 314 is formed at the junction of the first segment 311 and this surface. At the same time, the diameter of the end of the first segment 311 near the connecting end 312 is larger than the diameter of the connecting segment 312, that is, there is a difference between the diameter of the first segment 311 and the diameter of the connecting segment 312. Thus, an annular surface perpendicular to the axial direction X is formed at the junction of these two regions, thereby forming a second discharge tip 315. It can be seen that the first electrode plate 30 provided in this embodiment has at least two discharge tips in a certain region near the second chamber 12, which can form plasma more quickly and uniformly, and can correspondingly improve the spatial density of plasma.

[0055] Furthermore, the aperture of the first orifice 311 increases in the direction from the first chamber 11 to the second chamber 12, and the aperture of the first orifice 311 near the second chamber 12 is larger than the aperture of the end away from the second chamber 12. By setting the first orifice 311 to have an increasing aperture, a small buffer space can be formed in a portion of the dispersion orifice 31 near the second chamber 12. This allows the gas flowing through the dispersion orifice 31 to mix and diffuse earlier within the dispersion orifice 31, improving the mixing uniformity of the gas mixture. Moreover, setting the first orifice 311 of the dispersion orifice 31 to have an increasing aperture also allows the gas flowing out of the dispersion orifice 31 to diffuse at a wider angle, thereby effectively reducing the blind zone between adjacent dispersion orifices 31.

[0056] It is understood that the increasing diameter trend of the first aperture segment 311 refers to an overall increasing trend in aperture diameter. That is, the aperture of the first aperture segment 311 can first increase and then decrease, first decrease and then increase, or change repeatedly, as long as it ultimately shows an overall increasing trend, and the aperture at the end closer to the second chamber 12 is larger than the aperture at the end away from the second chamber 12. For example, in some optional embodiments, the first aperture segment 311 can be a frustum-shaped aperture with a uniformly increasing aperture, but this application is not limited to this.

[0057] Please refer to the following: Figure 4 and Figure 5 , Figure 4 This is a cross-sectional view of the first electrode plate provided in another embodiment of this application. Figure 5This is a cross-sectional view of the first electrode plate provided in another embodiment of this application. In some optional embodiments, the first hole segment 311 includes a plurality of first sub-hole segments 311a distributed sequentially along the axial direction X. Among two adjacent first sub-hole segments 311a, the minimum hole diameter of the first sub-hole segment 311a closer to the second chamber 12 is greater than or equal to the maximum hole diameter of the first sub-hole segment 311a away from the second chamber 12.

[0058] To further increase the number of discharge tips that the first electrode plate 30 can provide, the first aperture segment 311 in this embodiment can have multiple first sub-aperture segments 311a, and a new discharge tip is formed at the junction of every two adjacent first sub-aperture segments 311a. Taking the first aperture segment 311 including two first sub-aperture segments 311a as an example, the minimum diameter of the first sub-aperture segment 311a near the second chamber 12 can be greater than the maximum diameter of the first sub-aperture segment 311a near the connecting segment 312, thereby enabling the formation of a third discharge tip 316 at the junction of two first sub-aperture segments 311a, similar to the junction of the first aperture segment 311 and the connecting segment 312. When the vapor deposition apparatus 1000 is in operation, the first electrode 30 is connected to the radio frequency power supply. The first discharge tip 314, which is closest to the second electrode 40, will first form a discharge. The third discharge tip 316 and the second discharge tip 315 will then begin to discharge. Due to the cascading effect, the discharge rapidly diffuses to the entire first aperture section 311 and finally to the entire surface of the first electrode 30 near the second chamber 12. This can effectively increase the contact area between the mixed gas and the discharge area, making the plasma coverage area larger and easier to form, and also increasing the spatial density of the plasma.

[0059] In these first sub-hole segments 311a, the diameter of each first sub-hole segment 311a can remain constant. That is, the first hole segment 311 can be formed by multiple cylindrical first hole segments 311a connected together. At the same time, the diameter of these first sub-hole segments 311a increases progressively along the direction from the first chamber 11 to the second chamber 12, forming a tower-shaped hole. The cylindrical straight holes are easy to process, which can correspondingly reduce the production cost of the vapor deposition apparatus 1000.

[0060] It is understood that the embodiments and figures in this application are only illustrated by the example of having two first sub-hole segments 311a in the first hole segment 311. However, it should be understood that this application is not limited to this. The first hole segment 311 may also have more first sub-hole segments 311a, and a discharge tip is formed between every two adjacent first sub-hole segments 311a. This can further improve the plasma formation rate and the discharge contact area of ​​the mixed gas, thereby better ensuring the spatial density of the plasma in the second chamber 12.

[0061] In some alternative embodiments, the diameter of each first sub-hole segment 311a near the end of the second chamber 12 is larger than the diameter of the end away from the second chamber 12.

[0062] As an example, each first sub-hole segment 311a can exhibit a trend of increasing aperture in the direction from the first chamber 11 to the second chamber 12. That is, similar to the overall aperture change trend of the first hole segment 311, the aperture of each first sub-hole segment 311a can first increase and then decrease, first decrease and then increase, or change repeatedly. As long as the aperture at the end closer to the second chamber 12 is greater than the aperture at the end away from the second chamber 12 and conforms to the overall change trend of the first hole segment 311, this application does not impose any specific limitations on this.

[0063] In some alternative embodiments, the radial dimension of the first sub-hole segment 311a gradually increases along the axial direction X.

[0064] Similar to the case where the first orifice segment 311 includes only one frustum-shaped orifice, each first sub-orifice segment 311a can also be a frustum-shaped orifice, gradually expanding along the axial direction X to eventually form a near-multi-stage trumpet-shaped first orifice segment 311. Setting the orifice diameter of each first sub-orifice segment 311a to be uniform and gradually increasing allows the flow direction of the mixed gas to be guided through the sidewalls of the first orifice segment 311, enabling the mixed gas to flow more smoothly and diffuse out of the dispersion hole 31.

[0065] In some alternative embodiments, the aperture of the connecting segment 312 is the same at all points along the axial direction X.

[0066] The connecting end 312 connects the first chamber 11 and the first orifice 311. When using the vapor deposition apparatus 1000 provided in this embodiment, the gas first flows through the connecting end 312 and then enters the first orifice 311, which has a larger orifice diameter than the connecting end 312. Keeping the orifice diameter of the connecting end 312 the same throughout simplifies the processing of the connecting end 312 and also reduces the impact on the flow direction and velocity of the gas passing through it.

[0067] Please see Figure 6 , Figure 6 This is a cross-sectional view of the first electrode plate provided in another embodiment of this application. In some optional embodiments, the dispersion hole 31 further includes a second hole section 313 disposed along the axial direction X on the side of the connecting section 312 opposite to the first hole section 311. The second hole section 313 extends to the surface of the first electrode plate 30 facing the first chamber 11. Along the axial direction X, the diameter of the second hole section 313 tends to increase, and the diameter of the hole at the end facing the first chamber 11 is larger than the diameter of the hole at the end away from the first chamber 11.

[0068] Corresponding to the first orifice 311, a second orifice 313 can be provided on the other side of the connecting section 312. The diameter of the second orifice 313 increases in the direction from the second chamber 12 to the first chamber 11. The second orifice 313 is located in the first electrode plate 30 near the first chamber 11. The gas in the first chamber 11 enters the dispersion hole 31 through the second orifice 313. Therefore, setting the second orifice 313 to have an increasing diameter in the axial direction allows for a certain size of cavity space within the second orifice 313, thereby enabling the gas entering it to mix thoroughly, improving the uniformity of the process gas, and facilitating the next step of operation.

[0069] Please refer to it again. Figure 4 and Figure 5 In some optional embodiments, the second aperture segment 313 includes a plurality of second sub-aperture segments 313a. Among two adjacent second sub-aperture segments 313a, the minimum aperture of the second sub-aperture segment 313a closer to the first chamber 11 is greater than or equal to the maximum aperture of the second sub-aperture segment 313a away from the first chamber 11.

[0070] Corresponding to the first orifice section 311, the second orifice section 313 may also include multiple second sub-orifice sections 313a. The diameter of these second sub-orifice sections 313a increases progressively along the direction from the second chamber 12 to the first chamber 11, making the entry and mixing of gas smoother.

[0071] In some alternative embodiments, the diameter of each second sub-hole segment 313a at the end near the first chamber 11 is larger than the diameter at the end away from the first chamber 11. Furthermore, the radial dimension of the second sub-hole segment 313a can gradually increase along the axial direction X.

[0072] In this embodiment, the aperture change of the second aperture segment 313 can be set in the same way as the aperture change of the first aperture segment 311. That is, with the connecting segment 312 as the center, the first aperture segment 311 and the second aperture segment 313 can be set accordingly. The second aperture segment 313 with a uniform and gradually changing aperture is more conducive to the flow of gas.

[0073] In some optional embodiments, the second hole segment 313 has the same structure as the first hole segment 311 and is symmetrically arranged in the axial direction X.

[0074] The plurality of dispersion holes 31 in the first electrode plate 30 provided in this application embodiment can be symmetrically arranged in the axial direction X with the central cross section as the plane of symmetry. That is, the number and shape of the sub-regions of the first hole segment 311 and the second hole segment 313 are the same, and they are respectively arranged facing the two sides of the first electrode plate 30.

[0075] It is understandable that the symmetrical plane between the first hole segment 311 and the second hole segment 313, i.e., the aforementioned central cross-section, can be parallel to the two side surfaces of the first electrode plate 30 perpendicular to its own thickness direction, and the vertical distance between the central cross-section and these two surfaces can be the same. In this case, the first electrode plate 30 can be a plate-shaped component that is completely symmetrical from top to bottom. Therefore, during installation, the step of identifying or recognizing the upper and lower surfaces of the first electrode plate 30 can be eliminated, and installation can be carried out directly. It can also prevent defects caused by installation errors and has a foolproof function.

[0076] Furthermore, during use, the first electrode plate 30 requires tip discharge from a portion of its area near the second chamber 12. Therefore, as the usage time increases, this portion of the area will be eroded and damaged under the continuous scouring of plasma. In order to ensure the quality of film formation, the first electrode plate 30 provided in this embodiment can be flipped 180° and reused. That is, the original second hole segment 312 is flipped and used as the first hole segment 311, while the original first hole segment 311 is used as the second hole segment 312. This allows the original second hole segment 313, which is less damaged, to perform tip discharge, thereby effectively extending the service life of the first electrode plate 30 and reducing the equipment costs required for production.

[0077] In some alternative embodiments, the aperture of the connecting segment 312 is smaller than the minimum aperture of the second segment 313.

[0078] In an embodiment where the dispersion orifice 31 includes a second orifice segment 313, a connecting end 312, and a first orifice segment 311 arranged sequentially, the orifice diameter of the connecting end 312 can be smaller than the minimum diameter of both the first orifice segment 311 and the second orifice segment 313. That is, the region with the smallest orifice diameter of the dispersion orifice 31 is located in the connecting segment 312. By setting a thinner connecting segment 312, the gas flow rate in the connecting segment 312 can be increased while maintaining a constant air intake. When the gas enters the connecting segment 312, where the orifice diameter suddenly decreases after passing through the larger upper space of the second orifice segment 313, it is pushed by the subsequent gas, resulting in a higher flow rate. This allows the gas to enter the first orifice segment 311 at a higher flow rate, enabling it to disperse and diffuse more quickly within the space of the first orifice segment 311, further increasing the diffusion range and diffusion rate of the mixed gas.

[0079] In some alternative embodiments, a plurality of dispersion holes 31 are arranged in an array, with the minimum distance between any two adjacent dispersion holes 31 being equal.

[0080] To further improve the uniformity of film formation in the vapor deposition apparatus 1000, the plurality of dispersion holes 31 in the first substrate 30 can be arranged in an equally spaced array, with the same minimum spacing between each dispersion hole 31. This allows for a further improvement in the spatial distribution uniformity of the formed plasma through the uniform distribution of the dispersion holes 31.

[0081] Please refer to the following: Figure 7 and Figure 8 , Figure 7 This is a bottom view of the first electrode plate provided in another embodiment of this application. Figure 8 yes Figure 7 A cross-sectional view at point B-B'. In some optional embodiments, the first electrode plate 30 further includes a plurality of supplementary holes 32 respectively communicating with the first chamber 11 and the second chamber 12, the supplementary holes 32 being disposed between adjacent dispersion holes 31.

[0082] In the first electrode plate 30 provided in this application embodiment, a plurality of dispersion holes 31 are provided. As mentioned above, the aperture of the dispersion holes 31 can effectively reduce the blind zone between adjacent holes. On this basis, in order to further eliminate the blind zone, supplementary holes 32 can also be provided between adjacent dispersion holes 31. The supplementary holes 32 are also provided through the first electrode plate 30 in the axial direction X. The gas in the first chamber 11 can also enter the second chamber 12 through the supplementary holes 32.

[0083] Understandably, in order to reduce the number of supplementary holes 32 and leave as much space as possible for the distribution holes 31 to discharge, the supplementary holes 32 can be through holes. At the same time, the cross-sectional shape of the supplementary holes 32 can be adjusted according to the distribution design, area requirements and processing conditions, for example, it can be a round hole, a square hole, a triangular hole, a diamond hole, etc., and this application does not make any specific limitation in this regard.

[0084] In some optional embodiments, the aperture of the supplementary hole 32 is 400 μm to 800 μm.

[0085] The supplementary hole 32 provided in this embodiment is disposed between the dispersion holes 31. The diameter of the supplementary hole 32 should ensure that the spacing between adjacent dispersion holes 31 is not obstructed. At the same time, it should also ensure the gas flow rate that can pass through. Based on achieving the aforementioned functions, the diameter of the supplementary hole 32 can be 400μm to 800μm, but this application is not limited to this and can be designed according to the usage requirements.

[0086] Please see Figure 9 , Figure 9This is a schematic diagram of the structure of the electrode plate provided in the embodiments of this application. In a second aspect, embodiments of this application provide an electrode plate 30, applied in a vapor deposition apparatus. The electrode plate 30 has a first surface 50 and a second surface 60 disposed opposite to each other, and the electrode plate 30 is provided with a plurality of dispersion holes 31 penetrating the electrode plate 300 in its thickness direction. Each dispersion hole 31 includes a connecting segment 312 and a first hole segment 311 successively distributed along its own axial direction X. The first hole segment 311 extends to the first surface 50, and the connecting segment 312 is disposed at the end of the first hole segment 311 facing away from the first surface 50. Along the axial direction X, the diameter of the first hole segment 311 increases in size, and the diameter near the first surface 50 is larger than the diameter away from the first surface 50. The diameter of the connecting segment 312 is smaller than the diameter of the first hole segment 311 on the side facing away from the first surface 50.

[0087] In some optional embodiments, the dispersion hole 31 further includes a second hole segment 313, which is disposed on the side of the connecting segment 312 away from the first hole segment 311 and extends to the second surface 60; along the axial direction X, the diameter of the second hole segment 313 tends to increase and the diameter of the end near the second surface 60 is larger than the diameter of the end away from the second surface 60.

[0088] The electrode plate 30 provided in this application embodiment has all the beneficial effects of the first electrode plate 30 in the vapor deposition apparatus 1000 provided in this application embodiment. For details, please refer to the specific descriptions of the vapor deposition apparatus 1000 and the first electrode plate 30 therein in the above embodiments. This embodiment will not repeat the description here.

[0089] It is understood that the above description and details are merely exemplary and explanatory, and do not constitute a limitation on this application. Those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Thus, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A vapor deposition apparatus, characterized in that, include: The housing has a process chamber and an air inlet communicating with the process chamber; An electrode assembly is disposed in the process chamber. The electrode assembly includes a first electrode plate and a second electrode plate spaced apart. The first electrode plate is connected to the housing and divides the process chamber into a first chamber and a second chamber. The air inlet communicates with the first chamber. The second electrode plate is located in the second chamber. The first electrode plate is provided with a plurality of dispersion holes that communicate with the first chamber and the second chamber respectively. Each dispersion hole includes a connecting section, a first hole section, and a second hole section disposed along the axial direction on the side of the connecting section opposite to the first hole section. The first hole section extends... The connecting segment is disposed at the end of the first hole segment facing away from the second chamber, and along the axial direction, the diameter of the first hole segment increases, with the diameter at the end facing the second chamber being larger than the diameter at the end facing away from the second chamber. The diameter of the connecting segment is smaller than the diameter of the first hole segment facing away from the second chamber. The second hole segment extends to the surface of the first electrode plate facing the first chamber. The first electrode plate also includes a plurality of supplementary holes that respectively connect the first chamber and the second chamber, and the supplementary holes are disposed between adjacent dispersion holes. The second hole segment has the same structure as the first hole segment and is symmetrically arranged in the axial direction, and the diameter of the connecting segment is smaller than the minimum diameter of the second hole segment.

2. The vapor deposition apparatus according to claim 1, characterized in that, The first hole segment includes a plurality of first sub-hole segments distributed sequentially along the axial direction. Among two adjacent first sub-hole segments, the minimum hole diameter of the first sub-hole segment closer to the second chamber is greater than or equal to the maximum hole diameter of the first sub-hole segment away from the second chamber.

3. The vapor deposition apparatus according to claim 2, characterized in that, The diameter of each of the first sub-hole segments near the second chamber is larger than the diameter of the segment away from the second chamber.

4. The vapor deposition apparatus according to claim 2, characterized in that, The radial dimension of the first sub-hole segment gradually increases along the axial direction.

5. The vapor deposition apparatus according to claim 2, characterized in that, The diameter of the holes in the connecting section is the same at all points along the axial direction.

6. The vapor deposition apparatus according to claim 1, characterized in that, Along the axial direction, the diameter of the second hole segment tends to increase, and the diameter of the hole at the end facing the first chamber is larger than the diameter of the hole at the end away from the first chamber.

7. The vapor deposition apparatus according to claim 6, characterized in that, The second segment includes multiple second sub-segments. Among two adjacent second sub-segments, the minimum aperture of the second sub-segment closer to the first chamber is greater than or equal to the maximum aperture of the second sub-segment away from the first chamber.

8. The vapor deposition apparatus according to claim 7, characterized in that, The diameter of each second sub-hole segment near the end of the first chamber is larger than the diameter of the end away from the first chamber.

9. The vapor deposition apparatus according to claim 7, characterized in that, The radial dimension of the second sub-hole segment gradually increases along the axial direction.

10. The vapor deposition apparatus according to claim 1, characterized in that, The array of multiple dispersion holes is arranged such that the minimum distance between any two adjacent dispersion holes is equal.

11. The vapor deposition apparatus according to claim 1, characterized in that, The diameter of the supplementary hole is 400μm~800μm.

12. An electrode plate used in a vapor deposition apparatus, characterized in that, The electrode plate has a first surface and a second surface arranged opposite to each other. It is provided with a plurality of dispersion holes penetrating the electrode plate in its thickness direction. Each dispersion hole includes a connecting segment and a first hole segment successively distributed along its own axial direction. The first hole segment extends to the first surface. The connecting segment is located at the end of the first hole segment facing away from the first surface. Along the axial direction, the diameter of the first hole segment increases, and the diameter near the first surface is larger than the diameter away from the first surface. The diameter of the connecting segment is smaller than the diameter of the first hole segment facing away from the first surface. The dispersion hole also includes a second hole segment located on the side of the connecting segment facing away from the first hole segment and extending to the second surface. The electrode plate also includes a plurality of supplementary holes, which are disposed between adjacent dispersion holes. The second hole segment has the same structure as the first hole segment and is symmetrically arranged in the axial direction, and the diameter of the connecting segment is smaller than the minimum diameter of the second hole segment.

13. The electrode plate according to claim 12, characterized in that, Along the axial direction, the diameter of the second hole segment tends to increase, and the diameter of the hole near the end of the second surface is larger than the diameter of the hole away from the second surface.

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