A twin process chamber magnetron sputtering system

Abstract

The application belongs to the technical field of vacuum coating equipment, and particularly discloses a magnetron sputtering system of twin process chambers, which comprises a multi-piece sample feeding chamber, a first twin process chamber and a second twin process chamber, the first twin process chamber and the second twin process chamber are of the same structure, the multi-piece sample feeding chamber, the first twin process chamber and the second twin process chamber are connected through high-vacuum isolation valves respectively; the multi-piece sample feeding chamber is designed with front and rear doors, and the multi-piece sample feeding chamber is provided with a multi-piece workpiece device and a conveying manipulator; the first twin process chamber and the second twin process chamber are both provided with a target gun system and a workpiece disc. The magnetron sputtering system can continuously produce under the condition of keeping vacuum, save time, improve production efficiency, save time, improve production efficiency, improve maintenance efficiency and reduce maintenance difficulty.

Description

Technical Field

[0001] This invention belongs to the field of vacuum coating equipment technology, specifically relating to a magnetron sputtering coating equipment, and more particularly to a magnetron sputtering system for a twin process chamber. Background Technology

[0002] Magnetron sputtering is a type of physical vapor deposition that can be used to prepare various materials such as metals, semiconductors, and insulators. It boasts advantages such as simple equipment, ease of control, large coating area, and strong adhesion. Existing magnetron sputtering equipment has achieved high-speed, low-temperature, and low-damage coating capabilities, effectively improving gas ionization rates. A magnetic field is introduced onto the target cathode surface, using the magnetic field to confine charged particles and increase plasma density, thereby increasing the sputtering rate. Currently, there are various magnetron sputtering equipment technologies on the market, and the advantages and disadvantages of single-wafer or multi-wafer R&D or production equipment vary. For example, loading and unloading workpieces in single-wafer / multi-wafer equipment requires repeatedly venting the process chamber from process vacuum to atmospheric pressure (venting) and back to process vacuum (evacuation) each time a workpiece is changed, resulting in relatively wasted time. Common vacuum configurations use cold pumps due to their good stability and fast pumping speed, but for some special processes with residual particles, this leads to frequent cold pump maintenance and efficiency losses. The more workpieces a multi-wafer magnetron sputtering equipment can plate, the larger the designed chamber needs to be. A single-door design will increase the difficulty of equipment maintenance. Summary of the Invention

[0003] To address the problems existing in the current technology, the present invention provides a magnetron sputtering system for twin process chambers, which can maintain the process vacuum in the process chamber continuously during the process, making it easier to maintain the structure of the process chamber. In addition, the configuration of the vacuum system has been redesigned, making it more suitable for special processes with residual particles, reducing process maintenance and improving production efficiency.

[0004] The complete technical solution of this invention includes:

[0005] A magnetron sputtering system with twin process chambers includes multiple sample inlet chambers, a first twin process chamber, and a second twin process chamber. The first and second twin process chambers have the same structure. The multiple sample inlet chambers and the first twin process chamber are connected by a first high-vacuum isolation valve, and the multiple sample inlet chambers and the second twin process chamber are connected by a second high-vacuum isolation valve.

[0006] The multi-piece sample inlet chamber, the first twin process chamber, and the second twin process chamber all adopt a front-opening door design, including a front door at the front and a rear door at the rear; the multi-piece sample inlet chamber is equipped with a multi-piece workpiece device and a conveying robot.

[0007] Both the first and second twin process chambers are equipped with target gun systems and workpiece tray systems.

[0008] Furthermore, the multi-piece sample inlet chamber has an independent vacuum system.

[0009] Furthermore, the conveying robot arm can be raised and lowered, and can rotate 360 ​​degrees.

[0010] Furthermore, both the first and second twin process chambers are equipped with a target gun system and a workpiece disk system. Each workpiece disk system includes a rotary spindle, multiple planetary axes, and a workpiece disk. The rotary spindle and planetary axes provide two-axis rotation. The spindle drives multiple planetary axes to rotate, and each planetary axis drives a workpiece disk to rotate. The rotation speeds of the two axes can be set separately, and the rotation speeds of each planetary axis are consistent.

[0011] Furthermore, both the first twin process chamber and the second twin process chamber are equipped with independent vacuum systems.

[0012] Furthermore, in the vacuum systems of the first and second twin process chambers, the high vacuum pump uses a molecular pump and a cold pump, while the foreboard pump in the roughing chamber uses a mechanical pump.

[0013] The method for performing magnetron sputtering using the aforementioned magnetron sputtering system includes the following steps:

[0014] (1) Load the workpiece tray carrying the workpiece onto the multi-piece workpiece device of the multi-piece sample chamber, use the multi-piece sample chamber vacuum system to evacuate the multi-piece sample chamber to the required vacuum, at which time the twin process chamber is under the required process vacuum; rotate the spindle of the workpiece tray of the first twin process chamber to the corresponding planetary axis workpiece stage position, rotate the corresponding planetary axis workpiece stage to the workpiece loading position, open the first high vacuum isolation valve between the multi-piece sample chamber and the first twin process chamber, the transfer robot takes the workpiece from the multi-piece workpiece device, retracts to the position of the transfer robot of the multi-piece sample chamber, then the transfer robot rises to the loading high position, transfers the workpiece tray carrying the workpiece to the position above the planetary axis workpiece stage of the first twin process chamber, the transfer robot descends, places the workpiece tray on the workpiece stage on the planetary axis, the robot returns to the multi-piece sample chamber, closes the first high vacuum isolation valve between the multi-piece sample chamber and the first twin process chamber, through the above operation steps, all the workpieces in the first twin process chamber are loaded in sequence;

[0015] The loading process in the second twin process chamber is the same as the loading process in the first twin process chamber.

[0016] (2) After the first twin process chamber and the second twin process chamber are loaded, the process parameters are set and the magnetron sputtering coating process begins.

[0017] (3) After the coating of the first twin process chamber is completed, the spindle of the workpiece disk is rotated to the position of the planetary workpiece disk to be sampled, the planetary shaft is rotated to the sampling position, the first high vacuum isolation valve between the multi-piece sample chamber and the first twin process chamber is opened, the transfer robot is lowered to the sampling low position and inserted into the bottom of the workpiece disk, the transfer robot is raised to the high position and lifted the workpiece disk back to the position of the multi-piece sample chamber robot, and then the transfer robot places the workpiece disk at the position specified by the program on the multi-piece workpiece device stage. The above operations are performed in sequence until all the workpiece disks are taken out and placed on the multi-piece workpiece device stage, and the first high vacuum isolation valve between the first twin process chamber and the multi-piece sample chamber is closed.

[0018] The same sampling operation is performed on the parts removed from the second twin process chamber.

[0019] Furthermore, in step (2), for processes with residual particles, during sputtering coating, the cold pump is turned off and a molecular pump is used, and the residual particles are drawn into the recovery device by the mechanical pump in front of the molecular pump.

[0020] Furthermore, the first twin process chamber and the second twin process chamber can perform the same process to achieve continuous coating operation; or they can perform different coating processes respectively, with the different coating processes not affecting each other.

[0021] The advantages of this invention over the prior art are:

[0022] 1. The multi-piece sample inlet chamber and the twin process chamber of the present invention both adopt independent vacuum systems, so that the processes performed in the twin process chambers do not affect each other. The workpiece is transferred through the multi-piece sample inlet chamber. The twin process chamber can continuously produce under vacuum conditions through the cooperation of the multi-piece sample inlet chamber, saving time and improving production efficiency.

[0023] 2. Except for the time spent changing the target material and maintaining the process chamber, the process chamber is kept under a relative process vacuum. When performing the coating process, there is no need to repeatedly evacuate the vacuum, saving time and improving production efficiency.

[0024] 3. The high vacuum pump set is a combination of molecular pump and cold pump, which can maintain a stable process vacuum and is also suitable for some special processes with residual particles, reducing the maintenance of process cold pumps and making the process applicable to a wider range of processes.

[0025] 4. Both the multi-piece sample inlet chamber and the twin process chamber adopt a front and rear door design, which provides a more convenient maintenance mode for process maintenance, improves maintenance efficiency, and reduces maintenance difficulty. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the magnetron sputtering system structure of the twin process chamber of the present invention.

[0027] Figure 2 This is a schematic diagram of a multi-piece sample inlet chamber structure.

[0028] Figure 3 This is a schematic diagram of the twin manufacturing process chamber structure.

[0029] Figure 4 This is a schematic diagram of the workpiece disk system structure.

[0030] In the diagram: 1-Multi-piece sample inlet chamber, 2-First twin process chamber, 3-Second twin process chamber, 4-Front door of sample inlet chamber, 5-Rear door of sample inlet chamber, 6-Multi-piece workpiece device, 7-Transfer robot, 8-Vacuum system of sample inlet chamber, 9-Front door of twin process chamber, 10-Rear door of twin process chamber, 11-Target gun system, 12-Workpiece disk system, 13-Workpiece disk rotary spindle, 14-Workpiece disk planetary axis, 15-Workpiece disk, 16-Vacuum system of twin process chamber, 17-Electrical cabinet, 18-System control panel. Detailed Implementation

[0031] The present invention will now be described in detail with reference to embodiments and accompanying drawings. However, it should be understood that the embodiments and drawings are for illustrative purposes only and do not constitute any limitation on the scope of protection of the present invention. All reasonable modifications and combinations included within the inventive spirit of the present invention fall within the scope of protection of the present invention.

[0032] This invention discloses a magnetron sputtering system for a twin process chamber, such as Figure 1-4 As shown, it includes a multi-piece sample inlet chamber 1, a first twin process chamber 2, and a second twin process chamber 3. The three chambers are arranged side by side as a single unit. The first twin process chamber 2 and the second twin process chamber 3 have the same structure and are located on both sides of the multi-piece sample inlet chamber 1. The multi-piece sample inlet chamber 1 and the first twin process chamber 2 are connected by a first high-vacuum isolation valve, and the multi-piece sample inlet chamber 1 and the second twin process chamber 3 are connected by a second high-vacuum isolation valve.

[0033] The multi-piece sample inlet chamber 1 adopts a front and rear door design, including a front door 4 on the front side and a rear door 5 on the rear side. The multi-piece sample inlet chamber 1 is equipped with a multi-piece workpiece device 6 and a conveying robot 7. The multi-piece sample inlet chamber 1 has an independent sample inlet chamber vacuum system 8. The conveying robot 7 can be raised and lowered and can rotate 360 ​​degrees.

[0034] Both the first twin process chamber 2 and the second twin process chamber 3 have a front and rear door design, including a front door 9 at the front and a rear door 10 at the rear. They employ an upward sputtering method. The front door of the twin process chamber is equipped with an observation window and a baffle. A target gun system 11 is installed at the bottom of both the first twin process chamber 2 and the second twin process chamber 3, and a workpiece disk system 12 is installed above the chambers. In the workpiece disk system 12, two axes of rotation are provided by a workpiece disk rotating spindle 13 and workpiece disk planetary axes 14. The spindle drives multiple planetary axes 14 to rotate, and each planetary axis 14 drives a workpiece disk 15 to rotate. The rotation speeds of the two axes can be set separately, but the rotation speeds of all planetary axes 14 are consistent. The first twin process chamber 2 and the second twin process chamber 3 are equipped with independent twin process chamber vacuum systems 16. Each is equipped with its own electrical cabinet 17 and system control panel 18. In the vacuum system of the twin process chamber, the high vacuum pump uses a molecular pump and a cold pump, while the foreboard pump of the roughing chamber uses a mechanical pump.

[0035] The method for magnetron sputtering deposition using the above-mentioned twin process chamber magnetron sputtering system includes:

[0036] (1) Load the workpiece tray carrying the workpiece onto the multi-workpiece device of the multi-piece sample inlet chamber. Use the vacuum system to evacuate the multi-piece sample inlet chamber to the required vacuum (at this time, the twin process chamber is under the required process vacuum). The spindle of the workpiece tray in the first twin process chamber rotates to the position of the corresponding planetary axis workpiece stage. The corresponding planetary axis workpiece stage rotates to the position of loading the workpiece. Open the first high vacuum isolation valve between the multi-piece sample inlet chamber and the first twin process chamber. The transfer robot takes the workpiece from the multi-workpiece device and retracts to the transfer robot 7 of the multi-piece sample inlet chamber 1. The workpiece tray is then moved to the loading high position by the transfer robot 7, which then transfers the workpiece tray above the planetary axis workpiece stage of the first twin process chamber 2. The transfer robot 7 descends and places the workpiece tray on the workpiece stage on the planetary axis. The robot returns to the multi-piece sample inlet chamber and closes the first high-vacuum isolation valve between the multi-piece sample inlet chamber and the first twin process chamber 2. Through the above operation steps, all workpieces in the first twin process chamber 2 are loaded in sequence, and the loading of the second twin process chamber 3 is the same as the loading of workpieces in the first twin process chamber 2.

[0037] (2) Once the first twin process chamber 2 and the second twin process chamber 3 are loaded, the process parameters can be set and the sputtering process can begin.

[0038] For processes with residual particles, during sputtering coating, the cold pump is turned off and a molecular pump is used. The residual particles from the special process are drawn into the recovery device by the mechanical pump in front of the molecular pump.

[0039] (3) After the coating process is completed, for example, after the coating of the first twin process chamber 2 is completed, the spindle of the workpiece disk is rotated to the position of the planetary workpiece disk to be sampled, and the planetary shaft is rotated to the sampling position. The first high vacuum isolation valve between the multi-piece sample chamber 1 and the first twin process chamber 2 is opened. The transfer robot 7 is lowered to the sampling low position and inserted into the bottom of the workpiece disk to be sampled. The transfer robot 7 is raised to the high position and lifted the workpiece disk to be sampled back to the position of the multi-piece sample chamber robot. Then the transfer robot 7 places the workpiece disk to be sampled in the position specified by the program on the multi-piece workpiece device stage 6. The above operations are performed in sequence until all the workpiece disks are taken out and placed on the multi-piece workpiece device stage. The first high vacuum isolation valve between the first twin process chamber 2 and the multi-piece sample chamber 1 is closed. The same sampling operation can be performed on the workpieces in the second twin process chamber 3. Alternatively, the multi-piece sample chamber can be vented in the current state, the multi-piece sample chamber door can be opened, and the workpieces can be taken out. The process can be reasonably configured, is easy to use and operate, can be continuously produced, and has high production efficiency.

[0040] Furthermore, since the first and second twin process chambers can each perform different coating processes, and because the two twin process chambers share a single multi-plate sample inlet and the time required for the transition from low to high vacuum and the coating process itself differs, it is necessary to control the coating process in both twin process chambers to efficiently complete different multi-process vacuum coating operations and reduce equipment idle time and waiting time at each stage. Specifically, this includes:

[0041] First, the coating time for different coating processes is pre-calibrated. In the actual coating process, the coating material may be an oxide, a metal, or a combination of both. Due to the different coating materials, their sputtering and deposition rates also vary. To obtain a more uniform and accurate coating time estimate, this invention calibrates different coating materials before the reaction. Specifically, sample workpieces are selected, and data such as the distance between the coating material and the workpiece, coating power, gas flow rate, number of workpieces, and workpiece disk rotation speed are recorded. After coating, the coating thickness and coating uniformity of the sample surface are measured, and workpieces that do not meet the uniformity requirements are discarded. For the remaining workpieces, the relationship between each parameter and the coating thickness is analyzed to see if there is a linear relationship. For parameters with non-linear relationships, fixed parameter values ​​are used during coating. For parameters with linear relationships, their linear relationship with the coating thickness is recorded and stored in the control system as a preset setting, which can be selected during the actual coating process. After final determination, a linear relationship between sputtering power, coating time, and coating thickness was found.

[0042] Subsequently, the loading / unloading and vacuuming times for the workpieces in the multi-piece sample chambers were set, and the required coating time was calculated according to the coating thickness requirements of each twin process chamber using the previous method. Simultaneously, the coating time for each twin process chamber was added to the corresponding sample injection and vacuuming times, the sample injection (transfer from the multi-piece sample chamber to the twin process chamber) transfer and vacuuming times, the sample unloading (transfer from the twin process chamber to the multi-piece sample chamber) transfer and vacuuming times, and the sample unloading and vacuum release times, forming a complete process cycle. The process cycle times for each twin process chamber were compared to select a reasonable process sequence.

[0043] Furthermore, because magnetron sputtering vacuum coating processes require a high degree of vacuum, inaccurate vacuum control often leads to a decrease in coating quality or an increase in time. In this invention, pressure sensors are used to detect the vacuum level in each chamber during evacuation. For the sample injection chamber, the detected vacuum pressure value needs to be compared with a reference value (usually standard atmospheric pressure). If the requirement is met, the high-vacuum isolation valve is opened for sample injection / extraction. That is, the pressure value P is measured using a pressure sensor. i And by comparing it with the standard atmospheric pressure P0, we get k = P i / P0, when k meets (i.e. is less than) the preset value, the vacuum level is considered to meet the requirements.

[0044] In existing technologies, the reference value used is usually standard atmospheric pressure. However, in actual production, the real-time atmospheric pressure is not always standard atmospheric pressure. Studies have shown that during the rainy season or seasonal transitions, the deviation between real-time atmospheric pressure and standard atmospheric pressure can reach as high as -3% to -9%, resulting in a large deviation in the cavity reference and leading to defective products during cavity sampling. Furthermore, existing technologies indicate that another important factor during vacuuming is the "desorption" process, where gas molecules adsorbed on the workpiece surface in the atmospheric environment are gradually released from the surface during degassing. For typical metal surfaces, the degassing rate changes linearly with surface area and inversely with time. For polymer surfaces, the time behavior typically follows the reciprocal of the square root. The adsorption and desorption processes of different gas molecules on the workpiece surface are significant factors affecting the quality of cavity vacuuming and subsequent coating processes.

[0045] Through the study of the above process, this invention further discovers that under normal conditions, the partial pressures of other molecules in the atmosphere and on the surface of the same type of workpiece generally remain stable and can be considered constants. However, for water molecules in the atmosphere, due to differences in production location (southern or northern) and season (dry / rainy season), the water content (humidity value) in the atmosphere fluctuates greatly. For coated workpieces with certain specific process requirements, the influence of atmospheric water content (humidity value) on workpiece quality is more significant than the deviation in air pressure.

[0046] Since the adsorption process of water molecules on different workpiece surfaces is a complex kinetic problem, it is difficult to calculate accurately under normal conditions. Therefore, this invention quantifies it into a relatively calculable index through data statistics, and designs the following method:

[0047] Environmental pressure and humidity sensors are installed around the equipment to collect real-time atmospheric pressure and humidity values, denoted as P. L and R L And transmit it to the control system in real time.

[0048] A pressure sensor is installed in the injection chamber to collect the pressure value P of the injection chamber. i And convert it as follows:

[0049]

[0050] In the formula, w is the humidity coefficient, which ranges from 0.1 to 0.15.

[0051] When k L If the vacuum level meets (i.e., is less than) the preset value, it is considered to meet the requirements, and various operations can then be performed.

[0052] During equipment maintenance and repair, for multi-piece sample inlet chambers and twin process chambers, the front and rear chamber doors of the corresponding chambers can be opened to disassemble, assemble, and maintain the chambers and chamber components.

[0053] The above-described embodiments are merely some implementation methods of this application. For those skilled in the art, various modifications and improvements can be made without departing from the inventive concept of this application, and these all fall within the protection scope of this application.

Claims

1. A method for magnetron sputtering by a magnetron sputtering system with twin process chambers, characterized in that, The magnetron sputtering system with twin process chambers comprises a multi-piece sample chamber, a first twin process chamber and a second twin process chamber, the first and second twin process chambers are identical in structure, the multi-piece sample chamber and the first twin process chamber are connected by a first high-vacuum isolation valve, and the multi-piece sample chamber and the second twin process chamber are connected by a second high-vacuum isolation valve; the first and second twin process chambers are each provided with a target gun system and a workpiece disc system; the multi-piece sample chamber has an independent vacuum system; the first and second twin process chambers are each provided with an independent vacuum system; The coating process control of the first and second twin process chambers specifically comprises: First, the coating time of different coating processes is pre-calibrated, specifically, a sample workpiece is selected, and the coating material and workpiece distance, coating power, gas flow, workpiece quantity, and workpiece disc rotation speed data are recorded; after coating, the coating thickness of the sample and the coating uniformity of the sample surface are measured, and the workpieces with non-uniformity not meeting the requirements are removed; Whether there is a linear relationship between each parameter and the coating thickness is analyzed for the remaining workpieces, and for the parameters with linear relationship, such as sputtering power and coating time, the linear relationship between the parameters and the coating thickness is recorded, and the relationship is stored in the control system as a preset setting, and for the parameters with non-linear relationship, fixed parameter values are used during coating; Subsequently, the workpiece loading / demounting and vacuum pumping time in the multi-piece sample chamber is set, and the required coating time is calculated according to the coating thickness requirement of each twin process chamber; the coating time of each twin process chamber is added to the corresponding sample loading and vacuum pumping, sample loading transmission and vacuum pumping, sample unloading transmission and vacuum pumping, sample unloading and vacuum pumping time as a whole process cycle, and the process cycle time of each twin process chamber is compared to select the process sequence; During vacuum pumping in each chamber, a pressure sensor is used to detect the vacuum degree, and for the sample chamber, the detected vacuum pressure value is compared with the reference value, and when the requirement is met, the high-vacuum isolation valve is opened for sample loading / unloading operation; An ambient pressure and humidity sensor is arranged at the periphery of the device to collect the ambient atmospheric pressure and humidity values in real time, respectively, denoted as P L and R L , and transmit them to the control system in real time. A pressure sensor is arranged in the sample chamber to collect the pressure value P of the sample chamber i and is converted as follows: In the formula, w is a humidity coefficient, and has a value range of 0.1-0.15; when k L When the preset value is met, it is considered that the vacuum degree has met the requirement.

2. The method of magnetron sputtering according to claim 1, wherein The multi-piece sample chamber, the first twin process chamber and the second twin process chamber all adopt a front and rear door opening mode, including a front door located in the front and a rear door located in the rear; the multi-piece sample chamber is provided with a plurality of workpiece devices and a transmission manipulator.

3. The method of magnetron sputtering according to claim 2, wherein, The transmission manipulator can be lifted and rotated by 360 degrees.

4. The method of magnetron sputtering of claim 1, wherein, The workpiece disc system comprises a rotating main shaft, a plurality of planetary shafts and workpiece discs, the rotating main shaft and the planetary shafts provide two-axis rotation, the main shaft drives the plurality of planetary shafts to rotate, each planetary shaft drives a workpiece disc to rotate, and the rotation speeds of the two shafts can be set respectively, and the rotation speeds of the planetary shafts are consistent.

5. The method of magnetron sputtering of claim 1, wherein, In the vacuum system of the first and second twin process chambers, a molecular pump and a cold pump are used for the high-vacuum pump, and a mechanical pump is used for the rough pumping chamber.

6. The method of magnetron sputtering according to claim 5, wherein, The method comprises the following steps: (1) Load the workpiece disc carrying workpieces on the multi-piece workpiece device of the multi-piece loading chamber, use the multi-piece loading chamber vacuum system to pump the multi-piece loading chamber to the required vacuum, at this time the twin process chambers are under the required process vacuum; rotate the workpiece disc spindle of the first twin process chamber to the corresponding planetary shaft workpiece table position, rotate the corresponding planetary shaft workpiece table to the position where the workpieces are loaded, open the first high-vacuum isolation valve between the multi-piece loading chamber and the first twin process chamber, the transfer robot takes out the workpieces from the multi-piece workpiece device, retracts to the position of the transfer robot in the multi-piece loading chamber, then the transfer robot rises to the loading high position, transfers the workpiece disc carrying workpieces to above the planetary shaft workpiece table position of the first twin process chamber, the transfer robot descends, places the workpiece disc on the workpiece table on the planetary shaft, the robot returns to the multi-piece loading chamber, closes the first high-vacuum isolation valve between the multi-piece loading chamber and the first twin process chamber, through the above operation steps, all the workpieces in the first twin process chamber are sequentially loaded; The loading of the second twin process chamber is consistent with the loading of the first twin process chamber; (2) After the first twin process chamber and the second twin process chamber are loaded, set the process parameters, and start the magnetron sputtering coating process; (3) After the coating of the first twin process chamber is completed, rotate the workpiece disc spindle to the position of the planetary workpiece disc to be sampled, rotate the planetary shaft to the position where sampling is possible, open the first high-vacuum isolation valve between the multi-piece loading chamber and the first twin process chamber, lower the transfer robot to the sampling low position to extend into the bottom of the workpiece disc, raise the transfer robot to the high position to hold the workpiece disc back to the position of the transfer robot in the multi-piece loading chamber, then the transfer robot places the workpiece disc on the program-specified position on the multi-piece workpiece device table, sequentially perform the above operations until all the workpiece discs are taken out and placed on the multi-piece workpiece device table, close the first high-vacuum isolation valve between the first twin process chamber and the multi-piece loading chamber; The workpiece taking of the second twin process chamber is performed with the same sampling operation.

7. The method of magnetron sputtering according to claim 6, wherein In step (2), for the process with residual particles, during sputtering coating, the cold pump is closed and the molecular pump is used, and the residual particles are pumped away by the mechanical pump in front of the molecular pump to the recycling device.

8. The method of magnetron sputtering according to claim 6, wherein, The first twin process chamber and the second twin process chamber can perform the same process to realize continuous coating operation; or perform different coating processes respectively, and the different coating processes do not affect each other.

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