Synchronization control method of complex semiconductor laser networks based on unidirectional dependency

Abstract

The present invention relates to a method for synchronous control of a semiconductor laser network, and more particularly to a method for synchronous control of a complex semiconductor laser network based on unidirectional dependencies. The method constructs a semiconductor laser complex network model, adjusts parameter data in the semiconductor laser complex network model based on the unidirectional dependencies in the synchronization cluster, calculates the complex slowly varying electric field amplitude using the semiconductor laser complex network model, and finally calculates a synchronization state value based on the complex slowly varying electric field amplitude using a mean square error function. When the synchronization state value is not less than a preset synchronization state value, the parameter data in the semiconductor laser complex network model is adjusted. The method achieves synchronization stability control of the entire semiconductor laser network by changing the operating parameters of the semiconductor laser at the initial level in the directed network unidirectional dependency hierarchy, thereby improving network control efficiency and reducing network control costs.

Description

Technical Field

[0001] The present invention relates to the technical field of network synchronization control, and in particular to a complex semiconductor laser network synchronization control method based on a unidirectional dependency relationship. Background Art

[0002] With the rapid development of information technology and the advancement of digital transformation, communication networks have become an indispensable infrastructure in modern society, supporting information exchange and data transmission between people. However, with the increasing popularity of networks and the continuous expansion of their application, the security issues of all-optical communications have become increasingly prominent. Semiconductor lasers have many potential applications in secure optical communication networks. Their main advantage lies in leveraging laser chaos technology to achieve secure information transmission. Laser chaos synchronization can achieve efficient and highly secure key distribution and encrypted communication. This communication method based on chaotic synchronization offers high confidentiality and interference resistance during information transmission, making it more vulnerable to eavesdropping and attacks, thereby improving the security of information transmission. Traditional research on semiconductor laser synchronization has focused on the dynamic behavior of individual lasers and synchronization phenomena under simple mutual injection structures. However, with the increasing complexity of information networks, a deeper understanding of complex network systems formed by coupled multiple lasers is needed. Introducing complex network theory into the study of the nonlinear dynamics of semiconductor lasers provides a more comprehensive and in-depth understanding. By exploring the relationship between network topology and laser dynamics, we can better understand the synchronization behavior and stability of multi-laser systems. This will help develop more effective methods for laser network synchronization and control, improving the security and efficiency of secure optical communication networks. It will also provide new research perspectives and methods to meet the growing demand for communication security in the modern information society, provide strong support for the development and application of semiconductor lasers in secure optical communication technologies, and lay a solid foundation for building safer and more reliable communication networks.

[0003] The dynamic behavior of directed complex semiconductor laser networks is extremely complex. This complexity is reflected not only in the diverse topological structures of the network nodes but also in the intricate coupling mechanisms between them. Therefore, the resources required to control the network state may increase exponentially with the number of controlled nodes. By analyzing the network topology and finding the minimum number of control nodes to achieve global synchronization control of complex semiconductor laser networks, this problem can be solved more efficiently and economically. Therefore, effectively controlling the global synchronization stability of complex networks by controlling only a few source nodes and achieving the desired network state is of great practical significance. Summary of the Invention

[0004] The present invention overcomes the deficiencies of the prior art and provides a method for synchronously controlling a complex semiconductor laser network based on a unidirectional dependency relationship.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is:

[0006] A first aspect of the present invention provides a method for synchronously controlling a complex semiconductor laser network based on a unidirectional dependency relationship, comprising the following steps:

[0007] Obtaining a light injection relationship between semiconductor lasers, determining a directed edge description between semiconductor laser nodes based on the light injection relationship between the semiconductor lasers, and constructing a network topology structure based on the directed edge description between the semiconductor laser nodes;

[0008] generating an adjacency matrix according to the network topology, obtaining a minimum balanced partition of the semiconductor laser complex network based on the adjacency matrix, and determining a synchronization cluster according to the minimum balanced partition of the semiconductor laser complex network;

[0009] Constructing a semiconductor laser complex network model, adjusting parameter data in the semiconductor laser complex network model according to the unidirectional dependency in the synchronization cluster, and calculating the complex slowly varying electric field amplitude through the semiconductor laser complex network model;

[0010] A synchronization state value is obtained by calculating the amplitude of the complex slowly varying electric field through a mean square error function. When the synchronization state value is not less than a preset synchronization state value, parameter data in the semiconductor laser complex network model is adjusted until the synchronization state value is less than the preset synchronization state value.

[0011] Furthermore, in the complex semiconductor laser network synchronization control method based on unidirectional dependency, the calculation formula of the semiconductor laser complex network model is as follows:

[0012]

[0013]

[0014] Among them, the subscripts m and n represent the number of nodes in the complex network; E m (t), E n (t) are the complex slowly varying electric field amplitudes of the mth and nth lasers in the network respectively; N m (t) is the average carrier density of the mth laser in the network, A mn Represents the adjacency matrix corresponding to the network topology; k f represents the self-feedback intensity of the laser; ε is the gain saturation coefficient; α is the linewidth enhancement factor; σ is the injection intensity of the laser; G N is the differential gain coefficient; q is the photon charge; τ s is the photon lifetime; τ pis the carrier lifetime; N0 is the transparent carrier density; p f is the current factor; I th is the threshold current; τ f is the feedback delay; τ c is the injection delay; t is the time; ω represents the frequency of the laser; i represents the unit of the imaginary part of the complex number.

[0015] Furthermore, in the complex semiconductor laser network synchronization control method based on a one-way dependency, the synchronization state value is obtained by calculating the amplitude of the complex slow electric field through a mean square error function, which specifically includes:

[0016] The cluster synchronization stability in a complex network of semiconductor lasers can be described by the mean square error function, which satisfies the following relationship:

[0017]

[0018] Among them, N s represents the number of lasers in a cluster in the complex network. The symbol <·> is the average value of the output sequence over a period of time. RMS represents the synchronization state value. E m (t) is the complex slowly varying electric field amplitude of the mth laser; represents the mean value of the electric field amplitude of all nodes in the sth cluster of the semiconductor laser complex network, Express Find the mean value in time t.

[0019] A second aspect of the present invention provides a complex semiconductor laser network synchronization control system based on a unidirectional dependency relationship. The system includes a memory and a processor. The memory includes a complex semiconductor laser network synchronization control method program based on a unidirectional dependency relationship. When the complex semiconductor laser network synchronization control method program based on a unidirectional dependency relationship is executed by the processor, the following steps are implemented:

[0020] Obtaining a light injection relationship between semiconductor lasers, determining a directed edge description between semiconductor laser nodes based on the light injection relationship between the semiconductor lasers, and constructing a network topology structure based on the directed edge description between the semiconductor laser nodes;

[0021] generating an adjacency matrix according to the network topology, obtaining a minimum balanced partition of the semiconductor laser complex network based on the adjacency matrix, and determining a synchronization cluster according to the minimum balanced partition of the semiconductor laser complex network;

[0022] Constructing a semiconductor laser complex network model, adjusting parameter data in the semiconductor laser complex network model according to the unidirectional dependency in the synchronization cluster, and calculating the complex slowly varying electric field amplitude through the semiconductor laser complex network model;

[0023] A synchronization state value is obtained by calculating the amplitude of the complex slowly varying electric field through a mean square error function. When the synchronization state value is not less than a preset synchronization state value, parameter data in the semiconductor laser complex network model is adjusted until the synchronization state value is less than the preset synchronization state value.

[0024] In this system, the calculation formula of the semiconductor laser complex network model is as follows:

[0025]

[0026]

[0027] Among them, the subscripts m and n represent the number of nodes in the complex network; E m (t), E n (t) are the complex slowly varying electric field amplitudes of the mth and nth lasers in the network respectively; N m (t) is the average carrier density of the mth laser in the network, A mn Represents the adjacency matrix corresponding to the network topology; k f represents the self-feedback intensity of the laser; ε is the gain saturation coefficient; α is the linewidth enhancement factor; σ is the injection intensity of the laser; G N is the differential gain coefficient; q is the photon charge; τ s is the photon lifetime; τ p is the carrier lifetime; N0 is the transparent carrier density; p f is the current factor; I th is the threshold current; τ f is the feedback delay; τ c is the injection delay; t is the time; ω represents the frequency of the laser; i represents the unit of the imaginary part of the complex number.

[0028] In this system, the synchronization state value is obtained by calculating the complex slow electric field amplitude through the mean square error function, which specifically includes:

[0029] The cluster synchronization stability in a complex network of semiconductor lasers can be described by the mean square error function, which satisfies the following relationship:

[0030]

[0031] Among them, N srepresents the number of lasers in a cluster in the complex network. The symbol <·> is the average value of the output sequence over a period of time. RMS represents the synchronization state value. E m (t) is the complex slowly varying electric field amplitude of the mth laser; represents the mean value of the electric field amplitude of all nodes in the sth cluster of the semiconductor laser complex network, Express Find the mean value in time t.

[0032] A third aspect of the present invention provides a computer-readable storage medium, which includes a program for a method for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship. When the program for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship is executed by a processor, the steps of any one of the methods for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship are implemented.

[0033] The present invention solves the defects existing in the background technology and has the following beneficial effects:

[0034] This invention proposes a synchronization control scheme based on the unidirectional dependencies in a complex directed semiconductor laser network. By changing the operating parameters of the semiconductor lasers at the initial level in the directed network's unidirectional dependency hierarchy, the synchronization stability of the entire semiconductor laser network is controlled, improving network control efficiency and reducing network control costs. This invention innovates at the mechanism level, achieving synchronous control of lasers throughout the entire network by changing the basic operating parameters of the semiconductor laser cluster at the initial level in the directed network's unidirectional dependency hierarchy. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, without paying any creative work, they can also obtain drawings of other embodiments based on these drawings.

[0036] Figure 1 The figure shows a schematic diagram of a traditional synchronous control scheme of a semiconductor laser network based on common light injection;

[0037] Figure 2 A schematic diagram of a semiconductor laser network synchronization control system based on a unidirectional dependency relationship in a directed network is shown;

[0038] Figure 3 A schematic diagram of the adjacency matrix in the semiconductor laser network topology is shown;

[0039] Figure 4 shows a schematic diagram of the synchronization state;

[0040] Figure 5 The overall method flow chart of the complex semiconductor laser network synchronization control method based on unidirectional dependency is shown;

[0041] Figure 6 The system block diagram of a complex semiconductor laser network synchronization control system based on unidirectional dependency is shown. DETAILED DESCRIPTION

[0042] In order to more clearly understand the above-mentioned objects, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the absence of conflict, the embodiments of the present application and the features therein can be combined with each other.

[0043] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present invention is not limited to the specific embodiments disclosed below.

[0044] First, the existing method of controlling semiconductor laser network synchronization often involves reintroducing a new driver laser into the existing laser network. This new driver laser is then injected into the remaining lasers to achieve synchronization of the injected chaotic signal. Figure 1 As shown in Figure 1, the semiconductor laser network consists of five lasers, which can be divided into three synchronized clusters based on the adjacency matrix. A new external laser, D, is introduced, and its chaotic optical signal is injected into Laser 1 and Laser 2. By adjusting the injection intensity, the chaotic outputs of Laser 1 and Laser 2 can be synchronized.

[0045] like Figure 5 As shown, the first aspect of the present invention provides a complex semiconductor laser network synchronization control method based on a unidirectional dependency relationship, comprising the following steps:

[0046] S102: Acquire a light injection relationship between semiconductor lasers, determine a directed edge description between semiconductor laser nodes based on the light injection relationship between the semiconductor lasers, and construct a network topology structure based on the directed edge description between the semiconductor laser nodes;

[0047] S104: generating an adjacency matrix according to the network topology, obtaining a minimum balanced partition of the semiconductor laser complex network based on the adjacency matrix, and determining a synchronization cluster according to the minimum balanced partition of the semiconductor laser complex network;

[0048] S106: constructing a semiconductor laser complex network model, adjusting parameter data in the semiconductor laser complex network model according to the unidirectional dependency in the synchronization cluster, and calculating the complex slowly varying electric field amplitude through the semiconductor laser complex network model;

[0049] S108: Calculate the synchronization state value based on the amplitude of the complex slowly varying electric field through the mean square error function, and when the synchronization state value is not less than the preset synchronization state value, adjust the parameter data in the semiconductor laser complex network model until the synchronization state value is less than the preset synchronization state value.

[0050] In the steps S102 to S108 of this solution, Figure 2 Taking the network topology structure in the as an example, the study shows that in a directed semiconductor laser network, cluster 1 will be unidirectionally dependent on cluster 2 in different clusters divided according to the topological structure of the complex network. That is, when cluster 1 is in a synchronized state, cluster 2 may be synchronized, and when cluster 1 is out of synchronization, cluster 2 must be out of synchronization. The present invention uses this unidirectional dependency relationship in the directed network and proposes a strategy that uses the initial level in the unidirectional dependency hierarchy to control the synchronization state of the entire network, so as to achieve the purpose of cluster synchronization of the entire network. Figure 2 As shown, the complex directed network consists of 9 semiconductor lasers, in which all nodes have the same dynamics, and the dynamic model of each node is represented by the optical feedback semiconductor laser rate equation. In the initial state, the parameters of all lasers in the semiconductor laser network are kept completely consistent, and the light injection between different lasers is single injection rather than mutual injection. In order to more clearly display the dynamic state between each laser, the semiconductor laser is mapped to the topological structure of the complex network using graph theory. Each node represents a semiconductor laser, and the directed edges between nodes describe that the semiconductor laser receives light injection from other semiconductor lasers. According to Figure 2 The adjacency matrix of the network topology shown in the figure can be used to find the minimum balanced partition of the complex network. The division of the synchronous cluster is consistent with the minimum balanced partition. Figure 2 The complex network in [1] can be divided into four clusters: C1 = {1, 2, 3}, C2 = {4, 5}, C3 = {6, 7}, and C4 = {8, 9}. The light injection directions between the lasers in this complex network are C1 → C2, C1 → C3, and C1, C3 → C4. The unidirectional dependencies in this complex network are: C2 and C3 both unidirectionally depend on C1, while C4 unidirectionally depends on both C1 and C3. This scheme makes C1 more easily synchronized by changing the basic parameters of the laser in C1, thereby controlling the synchronization of the remaining clusters in the entire complex network.

[0051] In this scheme, the semiconductor laser complex network model satisfies the following relationship:

[0052]

[0053]

[0054] Among them, the subscripts m and n represent the number of nodes in the complex network; E m (t), E n (t) are the complex slowly varying electric field amplitudes of the mth and nth lasers in the network respectively; N m (t) is the average carrier density of the mth laser in the network, A mn Represents the adjacency matrix corresponding to the network topology; k f represents the self-feedback intensity of the laser; ε is the gain saturation coefficient; α is the linewidth enhancement factor; σ is the injection intensity of the laser; G N is the differential gain coefficient; q is the photon charge; τ s is the photon lifetime; τ p is the carrier lifetime; N0 is the transparent carrier density; p f is the current factor; I th is the threshold current; τ f is the feedback delay; τ c is the injection delay; t is the time; ω represents the frequency of the laser; i represents the unit of the imaginary part of the complex number.

[0055] Among them, the differential gain coefficient is 1.5×10 -8 ps -1 , the electron charge q is 1.6×10 -19 C, photon lifetime τ s The value of is 2ns, and the carrier lifetime τ p The value of is 2ps, and the transparent carrier density N0 is 1.5×10 8 , current factor p f The value is 2.5, the threshold current I th The value is 14.7mA, and the feedback delay τ f The value of is 1ns, the injection delay τ c The value is 1ns.

[0056] It should be noted that in mathematical expressions, Indicated as E m (t) Derivative with respect to time t; Indicates N m (t) Take the derivative with respect to time t.

[0057] The cluster synchronization stability in a semiconductor laser network can be described by the mean square error function, which satisfies the following relationship:

[0058]

[0059] Among them, N s represents the number of lasers in a cluster in the complex network. The symbol <·> is the average value of the output sequence over a period of time. RMS represents the synchronization state value. E m (t) is the complex slowly varying electric field amplitude of the mth laser; represents the mean value of the electric field amplitude of all nodes in the sth cluster of the semiconductor laser complex network, Express Find the mean value in time t.

[0060] It should be noted that, in this scheme, when the RMS value is less than 0.01, it is defined as the lasers in a certain cluster in the complex network have reached the synchronization state.

[0061] First, ensure that the initial parameters of all lasers in the entire network are the same: k f =8ns -1 ,ε=5×10 -7 , α=5, Figure 2 The network structure is used as an example to illustrate how to achieve synchronization of the entire network by changing the parameters of the C1 laser. Figure 4 The synchronization states of each cluster in the semiconductor laser network under different injection intensities σ are given. Figure 4 As can be seen in (a), under the condition of maintaining the above initial parameters, and with the same light injection direction as analyzed above, the synchronization state of C2 and C3 depends on C1. As long as C1 is out of synchronization, C2 and C3 will definitely be out of synchronization; while C4 depends on C1 and C3. As long as any cluster in C1 and C3 is different, C4 will definitely be out of synchronization. And according to the definition that the RMS value is less than 0.01, it can be seen that under this parameter, when σ>6ns -1 When , all clusters in the semiconductor laser network are out of sync.

[0062] At this point, the synchronization state of the entire semiconductor laser network can be controlled by changing the self-feedback intensity and linewidth enhancement factor of the laser in C1. Figure 4 As shown in (b), by changing the linewidth enhancement factor of the laser in C1 to α = 4, the synchronization interval of each cluster is increased, and it can be achieved when the injection intensity σ ≤ 9ns. -1 All clusters remain synchronized. Figure 4 As shown in (c), the self-feedback intensity k of the laser in C1 is changed. f =5ns -1, the synchronization interval of each cluster is increased, and the injection intensity σ≤9ns can be achieved -1 All clusters remain synchronized.

[0063] In summary, the present invention proposes a synchronization control scheme based on the unidirectional dependencies in a complex directed semiconductor laser network. By changing the operating parameters of the semiconductor lasers at the initial level in the unidirectional dependency hierarchy of the directed network, the synchronization stability of the entire semiconductor laser network is controlled, thereby improving network control efficiency and reducing network control costs. The present invention innovates from a mechanism perspective, achieving synchronous control of lasers in the entire network by changing the basic operating parameters of the semiconductor laser cluster at the initial level in the unidirectional dependency hierarchy of the directed network.

[0064] like Figure 6 As shown, the second aspect of the present invention provides a complex semiconductor laser network synchronization control system 4 based on a one-way dependency relationship, the system comprising a memory 41 and a processor 62, the memory comprising a complex semiconductor laser network synchronization control method program based on a one-way dependency relationship, and when the complex semiconductor laser network synchronization control method program based on a one-way dependency relationship is executed by the processor 62, the following steps are implemented:

[0065] Obtaining a light injection relationship between semiconductor lasers, determining a directed edge description between semiconductor laser nodes based on the light injection relationship between the semiconductor lasers, and constructing a network topology structure based on the directed edge description between the semiconductor laser nodes;

[0066] generating an adjacency matrix according to the network topology, obtaining a minimum balanced partition of the semiconductor laser complex network based on the adjacency matrix, and determining a synchronization cluster according to the minimum balanced partition of the semiconductor laser complex network;

[0067] Constructing a semiconductor laser complex network model, adjusting parameter data in the semiconductor laser complex network model according to the unidirectional dependency in the synchronization cluster, and calculating the complex slowly varying electric field amplitude through the semiconductor laser complex network model;

[0068] A synchronization state value is obtained by calculating the amplitude of the complex slowly varying electric field through a mean square error function. When the synchronization state value is not less than a preset synchronization state value, parameter data in the semiconductor laser complex network model is adjusted until the synchronization state value is less than the preset synchronization state value.

[0069] In this system, the calculation formula of the semiconductor laser complex network model is as follows:

[0070]

[0071]

[0072] Among them, the subscripts m and n represent the number of nodes in the complex network; E m (t), E n (t) are the complex slowly varying electric field amplitudes of the mth and nth lasers in the network respectively; N m (t) is the average carrier density of the mth laser in the network, A mn Represents the adjacency matrix corresponding to the network topology; k f represents the self-feedback intensity of the laser; ε is the gain saturation coefficient; α is the linewidth enhancement factor; σ is the injection intensity of the laser; G N is the differential gain coefficient; q is the photon charge; τ s is the photon lifetime; τ p is the carrier lifetime; N0 is the transparent carrier density; p f is the current factor; I th is the threshold current; τ f is the feedback delay; τ c is the injection delay; t is the time; ω represents the frequency of the laser; i represents the unit of the imaginary part of the complex number.

[0073] In this system, the synchronization state value is obtained by calculating the complex slow electric field amplitude through the mean square error function, which specifically includes:

[0074] The cluster synchronization stability in a complex network of semiconductor lasers can be described by the mean square error function, which satisfies the following relationship:

[0075]

[0076] Among them, N s represents the number of lasers in a cluster in the complex network. The symbol <·> is the average value of the output sequence over a period of time. RMS represents the synchronization state value. E m (t) is the complex slowly varying electric field amplitude of the mth laser; represents the mean value of the electric field amplitude of all nodes in the sth cluster of the semiconductor laser complex network, Express Find the mean value in time t.

[0077] A third aspect of the present invention provides a computer-readable storage medium, which includes a program for a method for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship. When the program for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship is executed by a processor, the steps of any one of the methods for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship are implemented.

[0078] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0079] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed across multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the scheme of this embodiment.

[0080] In addition, all functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may be separately used as a unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0081] Those skilled in the art will appreciate that all or part of the steps of the above-mentioned method embodiments may be implemented by hardware associated with program instructions, and the aforementioned program may be stored in a computer-readable storage medium. When the program is executed, the program executes the steps of the above-mentioned method embodiments. The aforementioned storage medium includes various media that can store program codes, such as mobile storage devices, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical disks.

[0082] Alternatively, if the above-mentioned integrated unit of the present invention is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the methods of each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROM, RAM, magnetic disks or optical disks.

[0083] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A complex semiconductor laser network synchronization control method based on unidirectional dependency, characterized in that: The following steps are involved: Obtaining a light injection relationship between semiconductor lasers, determining a directed edge description between semiconductor laser nodes based on the light injection relationship between the semiconductor lasers, and constructing a network topology structure based on the directed edge description between the semiconductor laser nodes; generating an adjacency matrix according to the network topology, obtaining a minimum balanced partition of the semiconductor laser complex network based on the adjacency matrix, and determining a synchronization cluster according to the minimum balanced partition of the semiconductor laser complex network; Constructing a semiconductor laser complex network model, adjusting parameter data in the semiconductor laser complex network model according to the unidirectional dependency in the synchronization cluster, and calculating the complex slowly varying electric field amplitude through the semiconductor laser complex network model; A synchronization state value is obtained by calculating the amplitude of the complex slowly varying electric field through a mean square error function, and when the synchronization state value is not less than a preset synchronization state value, parameter data in the semiconductor laser complex network model is adjusted until the synchronization state value is less than the preset synchronization state value; The calculation formula of the semiconductor laser complex network model is as follows: ， ， Among them, the corner mark Respectively represent the number of nodes in the complex network; 、 The first The complex slowly varying electric field amplitude of each laser; It is the first The average carrier density of a laser, Represents the adjacency matrix corresponding to the network topology; represents the self-feedback intensity of the laser; is the gain saturation coefficient; is the linewidth enhancement factor; is the injection intensity of the laser; is the differential gain coefficient; is the photon charge; is the photon lifetime; is the carrier lifetime; is the transparent carrier density; is the current factor; is the threshold current; is the feedback delay; is the injection delay; For time; Indicates the frequency of the laser; The unit representing the imaginary part of a complex number; The synchronization state value is obtained by calculating the amplitude of the complex slow electric field through the mean square error function, which specifically includes: The cluster synchronization stability in a complex network of semiconductor lasers can be described by the mean square error function, which satisfies the following relationship: ， in, Indicates the number of lasers in a cluster in the complex network, symbol To find the average value of the output sequence over a period of time; Indicates the synchronization status value; It is The complex slowly varying electric field amplitude of each laser; Represents the semiconductor laser complex network The mean electric field amplitude of all nodes in a cluster, Express beg The mean over time.

2. A complex semiconductor laser network synchronization control system based on one-way dependency, characterized in that: The system includes a memory and a processor. The memory includes a program for a complex semiconductor laser network synchronization control method based on a one-way dependency relationship. When the program for a complex semiconductor laser network synchronization control method based on a one-way dependency relationship is executed by the processor, the following steps are implemented: Obtaining a light injection relationship between semiconductor lasers, determining a directed edge description between semiconductor laser nodes based on the light injection relationship between the semiconductor lasers, and constructing a network topology structure based on the directed edge description between the semiconductor laser nodes; generating an adjacency matrix according to the network topology, obtaining a minimum balanced partition of the semiconductor laser complex network based on the adjacency matrix, and determining a synchronization cluster according to the minimum balanced partition of the semiconductor laser complex network; Constructing a semiconductor laser complex network model, adjusting parameter data in the semiconductor laser complex network model according to the unidirectional dependency in the synchronization cluster, and calculating the complex slowly varying electric field amplitude through the semiconductor laser complex network model; A synchronization state value is obtained by calculating the amplitude of the complex slowly varying electric field through a mean square error function, and when the synchronization state value is not less than a preset synchronization state value, parameter data in the semiconductor laser complex network model is adjusted until the synchronization state value is less than the preset synchronization state value; The calculation formula of the semiconductor laser complex network model is as follows: ， ， Among them, the corner mark Respectively represent the number of nodes in the complex network; 、 The first The complex slowly varying electric field amplitude of each laser; It is the first The average carrier density of a laser, Represents the adjacency matrix corresponding to the network topology; represents the self-feedback intensity of the laser; is the gain saturation coefficient; is the linewidth enhancement factor; is the injection intensity of the laser; is the differential gain coefficient; is the photon charge; is the photon lifetime; is the carrier lifetime; is the transparent carrier density; is the current factor; is the threshold current; is the feedback delay; is the injection delay; For time; Indicates the frequency of the laser; The unit representing the imaginary part of a complex number; The synchronization state value is obtained by calculating the amplitude of the complex slow electric field through the mean square error function, which specifically includes: The cluster synchronization stability in a complex network of semiconductor lasers can be described by the mean square error function, which satisfies the following relationship: ， in, Indicates the number of lasers in a cluster in the complex network, symbol To find the average value of the output sequence over a period of time; Indicates the synchronization status value; It is The complex slowly varying electric field amplitude of each laser; Represents the semiconductor laser complex network The mean electric field amplitude of all nodes in a cluster, Express beg The mean over time.

3. A computer-readable storage medium, characterized in that The computer-readable storage medium includes a program for a method for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship. When the program for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship is executed by a processor, the steps of the method for synchronously controlling a complex semiconductor laser network based on a one-way dependency relationship as described in any one of claims 1-2 are implemented.

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