Dynamic random access memory and forming method and working method thereof

Abstract

A dynamic random access memory and a forming method and a working method thereof, wherein the memory comprises: a plurality of first channel columns and a plurality of second channel columns arranged alternately along a second direction, the plurality of first channel columns in a first channel column region have first central axes parallel to the second direction, the plurality of second channel columns in a second channel column region have second central axes parallel to the second direction, and the first central axes are not coincident with the second central axes. The integration of the device structure is effectively improved due to the increase of the second channel column between adjacent first channel columns. The first central axes are not coincident with the second central axes of the plurality of second channel columns, which can ensure that the first channel columns and the second channel columns are staggered with each other and have sufficient isolation gap, thereby reducing the problem of short circuit between adjacent transistors. In addition, two independent memory arrays are formed, and a fixed voltage can be applied to the bit line of one of the memory arrays to prevent crosstalk in the other memory array.

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