Wafer tray machining method

Abstract

The present invention relates to the field of tray processing technology, and specifically discloses a wafer tray machining method, comprising the following steps: rough machining the tray blank; respectively abutting the two side end faces of the wafer tray with a pressure plate and a bottom plate, then performing axis centering and table alignment on the outer ring surface of the wafer tray, and performing outer circle finishing machining on the outer ring surface after axis centering and table alignment; respectively performing semi-finishing machining on the two side end faces of the wafer tray; cutting the outer ring surface of the wafer tray to form a raised portion and a recessed portion, and cutting the inner ring surface of the wafer tray to form an annular groove; and cutting the raised portion of the wafer tray to form an annular bevel. During the machining process, the present invention first ensures that the roundness, flatness, concentricity and parallelism of the wafer tray meet the requirements, and then performs other machining on the wafer tray, so that the wafer tray can meet the size requirements of the drawing after machining, thereby reducing the manufacturing cost.

Description

Technical Field

[0001] The present invention relates to the technical field of tray processing, and in particular to a wafer tray machining method. Background Art

[0002] In semiconductor processing, physical vapor deposition (PVD) is a commonly used method for coating wafer surfaces. When sputtering, the wafer surface must be very flat. Tilts in the wafer surface can lead to uneven coating, which in turn reduces wafer quality and affects wafer usability. Wafers are supported on trays, so the tray's molding accuracy directly affects the wafer's surface flatness.

[0003] During the existing pallet manufacturing process, the original pallet blank is secured with internal or external clamps to facilitate subsequent processing. Pallets are made of a relatively soft Al-Si-Cu aluminum alloy, which can easily deform when secured with these clamps. This can result in the pallet's roundness, flatness, concentricity, and parallelism not meeting the required dimensions. Consequently, the finished pallet will not meet the dimensional requirements of the drawing. Summary of the Invention

[0004] The purpose of the present invention is to provide a wafer tray machining method to solve the problem in the prior art that the tray is easily deformed when fixed by an internal support clamp or an external clamp, resulting in the roundness, flatness, concentricity and parallelism of the tray not meeting the requirements, and further causing the processed tray to not meet the dimensional requirements of the drawing.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] The present invention provides a wafer tray machining method, comprising the following steps:

[0007] S1. Rough-processing the tray blank to form a wafer tray having an outer ring surface, an inner ring surface, and two side end surfaces;

[0008] S2, respectively contacting the two side end surfaces of the wafer tray with a pressure plate and a base plate so that the pressure plate and the base plate clamp and fix the wafer tray, then performing axis centering and table alignment on the outer ring surface of the wafer tray, and performing outer circle finishing on the outer ring surface after axis centering and table alignment;

[0009] S3, performing semi-finishing processing on the two side end surfaces of the wafer tray to reduce the flatness of the two side end surfaces;

[0010] S4, clamping the outer annular surface and one of the side end surfaces of the wafer tray with an external clamp to cut the outer annular surface of the wafer tray to form a protrusion and a recess, and cutting the inner annular surface of the wafer tray to form an annular groove;

[0011] S5. Clamp the inner annular surface and the other side end surface of the wafer tray by an inner support fixture to cut the raised portion of the wafer tray to form an annular inclined surface.

[0012] As an optional solution of the above-mentioned wafer tray machining method, in step S2, it also includes: connecting the above-mentioned pressure plate and the above-mentioned base plate through a bolt structure to clamp the above-mentioned wafer tray.

[0013] As an optional solution to the above-mentioned wafer tray machining method, the axis centering and calibration range of the above-mentioned outer ring surface of the above-mentioned wafer tray is less than or equal to 0.3mm, and the roundness range of the above-mentioned outer ring surface after outer circle finishing is less than or equal to 0.1mm.

[0014] As an optional solution to the above-mentioned wafer tray machining method, after the two side end surfaces of the above-mentioned wafer tray are semi-finished respectively, the flatness range of the two side end surfaces is less than or equal to 0.1 mm.

[0015] As an optional solution of the above-mentioned wafer tray machining method, in step S4, it also includes: selecting the side end surface with smaller flatness among the two side end surfaces as the clamping surface of the above-mentioned outer clamp.

[0016] As an optional solution of the above-mentioned wafer tray machining method, in step S4, it also includes: cutting the above-mentioned wafer tray by using a diamond blade in combination with alcohol.

[0017] As an optional solution of the above-mentioned wafer tray machining method, after step S4 and before step S5, it also includes: machining each side of the above-mentioned wafer tray to form chamfers.

[0018] As an optional solution of the above-mentioned wafer tray machining method, in step S5, it also includes: tightening the above-mentioned recessed portion by using a steel hoop.

[0019] As an optional solution of the above-mentioned wafer tray machining method, in step S1 and step S2, it also includes: machining the above-mentioned wafer tray by a common lathe.

[0020] As an optional solution of the above-mentioned wafer tray machining method, in step S3, step S4 and step S5, it also includes: machining the above-mentioned wafer tray by a CNC lathe.

[0021] The beneficial effects of the present invention are:

[0022] In the present invention, the tray blank is firstly rough-machined to form a wafer tray with an outer ring surface, an inner ring surface and two side end surfaces, so that the wafer tray has a preliminary shape, which is convenient for subsequent processing; the two side end surfaces of the wafer tray are then clamped by the pressing plate and the bottom plate, which can avoid the inner support clamp or the outer clamp directly acting on the wafer tray itself and causing the wafer tray to deform, so that the outer ring surface of the wafer tray can be turned with high precision. The concentricity and circularity of the wafer tray can be ensured by aligning the axis and the table. degree; then semi-finishing is performed on the two side end faces of the wafer tray respectively, thereby reducing the flatness of the two side end faces and ensuring the parallelism of the wafer tray, which facilitates the subsequent clamping of the wafer tray by the external clamp and improves the processing accuracy; then the wafer tray is clamped by the external clamp to facilitate the processing of the outer ring surface of the wafer tray to form a protrusion and a recessed portion, and the processing of the inner ring surface to form an annular groove; finally, the wafer tray is clamped by the internal support clamp to facilitate the processing of the protrusion of the wafer tray to form an annular inclined surface. During the processing of this wafer tray machining method, first ensure that the roundness, flatness, concentricity and parallelism of the wafer tray meet the requirements, and then perform other processing on the wafer tray, so that the wafer tray can meet the size requirements of the drawing after processing, thereby reducing manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic flow chart of a wafer tray machining method according to an embodiment of the present invention;

[0024] Figure 2 A schematic structural diagram of a wafer tray obtained after processing in step S1 according to an embodiment of the present invention;

[0025] Figure 3 A schematic structural diagram of a wafer tray obtained after processing in step S2 according to an embodiment of the present invention;

[0026] Figure 4 A schematic structural diagram of a wafer tray obtained after processing in step S4 according to an embodiment of the present invention;

[0027] Figure 5 for Figure 4 A partial enlarged view of point A in the middle;

[0028] Figure 6 A schematic structural diagram of a wafer tray obtained after processing in step S5 according to an embodiment of the present invention;

[0029] Figure 7 for Figure 6 A partial enlarged view of point B in the middle.

[0030] In the picture:

[0031] 1. Wafer tray; 11. Outer ring surface; 111. Raised portion; 1111. Annular slope; 112. Recessed portion; 12. Inner ring surface; 121. Annular groove; 13. Side end surface; 2. Press plate; 3. Bottom plate; 4. External clamp; 5. Internal support clamp; 6. Bolt structure. DETAILED DESCRIPTION

[0032] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0033] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and are not intended to indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions, and the first feature being "above", "above" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature includes the first feature being directly below and obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0034] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0035] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0036] This embodiment provides a wafer tray machining method for machining and manufacturing a wafer tray.

[0037] like Figures 1 to 7 As shown, the wafer tray machining method includes the following steps:

[0038] S1, rough-machining the tray blank to form a wafer tray 1 having an outer ring surface 11, an inner ring surface 12 and two side end surfaces 13;

[0039] S2, respectively contacting the two side end surfaces 13 of the wafer tray 1 with the pressing plate 2 and the bottom plate 3 so that the pressing plate 2 and the bottom plate 3 clamp and fix the wafer tray 1, then performing axis centering and table alignment on the outer ring surface 11 of the wafer tray 1, and performing outer circle finishing on the outer ring surface 11 after axis centering and table alignment;

[0040] S3, semi-finishing the two side end surfaces 13 of the wafer tray 1 to reduce the flatness of the two side end surfaces 13;

[0041] S4. Clamp the outer ring surface 11 and one of the side end surfaces 13 of the wafer tray 1 with the outer clamp 4 to cut the outer ring surface 11 of the wafer tray 1 to form a protrusion 111 and a recess 112, and cut the inner ring surface 12 of the wafer tray 1 to form an annular groove 121;

[0042] S5 , clamping the inner annular surface 12 and the other side end surface 13 of the wafer tray 1 by the inner support fixture 5 to cut the raised portion 111 of the wafer tray 1 to form an annular inclined surface 1111 .

[0043] In this embodiment, the tray blank is first rough-machined to form a wafer tray 1 with an outer ring surface 11, an inner ring surface 12 and two side end surfaces 13, so that the wafer tray 1 has a preliminary shape, which is convenient for subsequent processing; the two side end surfaces 13 of the wafer tray 1 are clamped by the pressure plate 2 and the bottom plate 3, which can avoid the inner support clamp 5 or the outer clamp 4 directly acting on the wafer tray 1 itself and causing the wafer tray 1 to deform, so that the outer ring surface 11 of the wafer tray 1 can be high-precision turned outer circle finishing, wherein the axis alignment and table alignment can ensure the concentricity and roundness of the wafer tray 1; and then the wafer The two side end surfaces 13 of the tray 1 are semi-finished, thereby reducing the flatness of the two side end surfaces 13 and ensuring the parallelism of the wafer tray 1, facilitating the subsequent clamping of the wafer tray 1 by the external clamp 4 and thereby improving machining accuracy. The wafer tray 1 is then clamped by the external clamp 4 to facilitate machining of the outer annular surface 11 of the wafer tray 1 to form a protrusion 111 and a recess 112, and machining of the inner annular surface 12 to form an annular groove 121. Finally, the wafer tray 1 is clamped by the internal support clamp 5 to facilitate machining of the protrusion 111 of the wafer tray 1 to form an annular bevel 1111. During the machining process of this wafer tray machining method, the roundness, flatness, concentricity, and parallelism of the wafer tray 1 are first ensured to meet the requirements, and then other machining is performed on the wafer tray 1. This ensures that the wafer tray 1 meets the dimensional requirements of the drawing after machining, thereby reducing manufacturing costs. Optionally, the wafer tray 1 is an Al-Si-Cu aluminum alloy tray.

[0044] Furthermore, in step S2, the pressure plate 2 and the base plate 3 are connected by a bolt structure 6 to clamp the wafer tray 1, so as to facilitate the adjustment of the distance between the pressure plate 2 and the base plate 3, thereby meeting the requirements of clamping the two side end surfaces 13 with different spacings. At the same time, during the axis centering and table alignment process of the wafer tray 1, the position of the wafer tray 1 relative to the base plate 3 can also be conveniently adjusted. Optionally, the axis centering and table alignment range of the outer ring surface 11 of the wafer tray 1 is less than or equal to 0.3 mm, so as to ensure that the concentricity of the outer ring surface 11 is within the allowable error range before the outer circle finishing of the outer ring surface 11 is performed, thereby improving the processing accuracy, and the roundness range of the outer ring surface 11 after the outer circle finishing is less than or equal to 0.1 mm, thereby ensuring that the roundness of the outer ring surface 11 of the wafer tray 1 after the outer circle finishing meets the drawing requirements.

[0045] Furthermore, after the two side end surfaces 13 of the wafer tray 1 are semi-finished, the flatness range of the two side end surfaces 13 is less than or equal to 0.1 mm, so that the flatness of the two side end surfaces 13 meets the requirements of the drawing.

[0046] At the same time, in step S4, it also includes selecting the side end face 13 with the smaller flatness among the two side end faces 13 as the clamping surface of the outer clamp 4, thereby improving the position accuracy of the wafer tray 1 relative to the outer clamp 4, so as to improve the subsequent processing accuracy of the outer ring surface 11 and the inner ring surface 12. Among them, in step S4, it also includes axial centering and table alignment of the outer ring surface 11 of the wafer tray 1, and ensuring that the axial centering and table alignment range of the outer ring surface 11 is less than or equal to 0.1mm. Optionally, in step S4, it also includes fine machining of the side end faces 13 to further reduce the flatness of the two side end faces 13. Further optionally, in step S4, it also includes cutting the wafer tray 1 by using a diamond blade in combination with alcohol to avoid chip squeezing during the cutting process and causing an increase in cutting force.

[0047] Furthermore, after step S4 and before step S5, the edges of wafer tray 1 are processed to form chamfers, so that wafer tray 1 meets the requirements of the drawings. At the same time, step S5 also includes tightening the recessed portion 112 with a steel hoop. When the inner support fixture 5 is used, the steel hoop can tighten the recessed portion 112 of wafer tray 1, preventing the wafer tray 1 from deforming. This ensures the machining accuracy of the annular bevel 1111 and the subsequent machining accuracy of the inner annular surface 12, the side end surface 13, and the chamfers.

[0048] Furthermore, in steps S1 and S2, wafer tray 1 is further processed using a conventional lathe. Conventional lathes have low tool requirements and are easy to change, which can reduce the cost of rough-machining the wafer tray 1 from the original tray. They also facilitate the addition of the pressure plate 2 and the base plate 3, meeting the requirements for finishing the outer diameter of the wafer tray 1. At the same time, in steps S3, S4, and S5, wafer tray 1 is further processed using a CNC lathe, so that subsequent processing is completed by the CNC lathe. This ensures the processing accuracy of the wafer tray 1 while facilitating large-scale processing of the wafer tray 1.

[0049] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. A wafer tray machining method, characterized in that: The following steps are involved: S1, rough-processing the tray blank to form a wafer tray (1) having an outer ring surface (11), an inner ring surface (12) and two side end surfaces (13); S2, respectively contacting the two side end surfaces (13) of the wafer tray (1) with the pressing plate (2) and the bottom plate (3), so that the pressing plate (2) and the bottom plate (3) clamp and fix the wafer tray (1), then performing axis centering and table alignment on the outer ring surface (11) of the wafer tray (1), and performing outer circle finishing on the outer ring surface (11) after axis centering and table alignment; S3, performing semi-finishing processing on the two side end surfaces (13) of the wafer tray (1) respectively to reduce the flatness of the two side end surfaces (13); S4, clamping the outer ring surface (11) and one of the side end surfaces (13) of the wafer tray (1) by an external clamp (4), cutting the outer ring surface (11) of the wafer tray (1) to form a raised portion (111) and a recessed portion (112), and cutting the inner ring surface (12) of the wafer tray (1) to form an annular groove (121); S5. Clamp the inner annular surface (12) and the other side end surface (13) of the wafer tray (1) with an inner support clamp (5) to cut the raised portion (111) of the wafer tray (1) to form an annular inclined surface (1111).

2. The wafer tray machining method according to claim 1, characterized in that: In step S2, it also includes: connecting the pressure plate (2) and the base plate (3) through a bolt structure (6) to clamp the wafer tray (1).

3. The wafer tray machining method according to claim 1, characterized in that: The axis centering and calibrating range of the outer ring surface (11) of the wafer tray (1) is less than or equal to 0.3 mm, and the roundness range of the outer ring surface (11) after finishing the outer circle is less than or equal to 0.1 mm.

4. The wafer tray machining method according to claim 1, wherein: After the two side end surfaces (13) of the wafer tray (1) are semi-finished respectively, the flatness range of the two side end surfaces (13) is less than or equal to 0.1 mm.

5. The wafer tray machining method according to claim 1, wherein: In step S4, it also includes: selecting the side end surface (13) with smaller flatness among the two side end surfaces (13) as the clamping surface of the outer clamp (4).

6. The wafer tray machining method according to claim 1, wherein: In step S4, it also includes: cutting the wafer tray (1) using a diamond blade in combination with alcohol.

7. The wafer tray machining method according to claim 1, wherein: After step S4 and before step S5, the method further includes: processing each side of the wafer tray (1) to form chamfers.

8. The wafer tray machining method according to claim 1, wherein: In step S5, it further includes: tightening the recessed portion (112) by using a steel hoop.

9. The wafer tray machining method according to claim 1, wherein: In step S1 and step S2, the method further includes: processing the wafer tray (1) by a common lathe.

10. The wafer tray machining method according to claim 1, wherein: In step S3, step S4 and step S5, the method further includes: processing the wafer tray (1) by a numerically controlled lathe.

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