Push-pull power amplifier system and RF front-end module

Abstract

The present invention belongs to the technical field of amplifying circuits, and in particular, relates to a push-pull power amplifying system. It includes a substrate; an input conversion circuit, configured to convert an input radio frequency signal into a first differential signal and a second differential signal; a first chip arranged on the substrate includes a first power amplifier, configured to receive the first differential signal, and output the first differential signal after amplification; a second chip arranged on the substrate includes a second power amplifier, configured to receive the second differential signal, and output the second differential signal after amplification, and the first chip and the second chip are relatively separated on the substrate; an output conversion circuit, configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal. Therefore, the present invention realizes that by placing the first power amplifier and the second power amplifier on different chips respectively, the heat dissipation of the push-pull power amplifying system is improved, and the power consumption loss is reduced.

Description

Technical Field

[0001] The present invention belongs to the field of amplifier circuits, and in particular relates to a push-pull power amplifier system and a radio frequency front-end module. Background Art

[0002] As the core RF unit in the communication system, the performance characteristics of the push-pull power amplifier circuit have a great impact on the overall system indicators and the transmission capacity of the communication system. The push-pull power amplifier circuit can achieve high power, high efficiency, low distortion, and relatively balanced overall performance. At present, the transistors in the push-pull power amplifier circuit will generate a certain amount of heat during operation, which leads to poor heat dissipation of the push-pull power amplifier, seriously affecting the performance of the push-pull power amplifier and increasing power consumption. Summary of the invention

[0003] The technical problem to be solved by the present invention is: to provide a push-pull power amplifier system in view of the heat dissipation problem of the push-pull power amplifier in the prior art.

[0004] In order to solve the above technical problems, an embodiment of the present invention provides a push-pull power amplification system, comprising:

[0005] substrate;

[0006] An input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;

[0007] A first chip is disposed on the substrate, wherein the first chip includes a first power amplifier configured to receive the first differential signal and amplify the first differential signal before outputting it;

[0008] A second chip is disposed on the substrate, the second chip includes a second power amplifier, and is configured to receive the second differential signal, and output the second differential signal after amplification, and the first chip and the second chip are relatively separated and disposed on the substrate;

[0009] The output conversion circuit is configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal.

[0010] Optionally, the input conversion circuit includes a first input balun, the output conversion circuit includes a first output balun, the first power amplifier includes a first amplifying transistor, and the second power amplifier includes a second amplifying transistor;

[0011] The first input balun comprises a plurality of first input terminals, the first input terminal of the first input balun is configured to receive the input RF signal, and the second input terminal is connected to a ground terminal or a power terminal;

[0012] The first input balun includes a plurality of first output terminals, a first output terminal of the first input balun is connected to the input terminal of the first amplifying transistor, an output terminal of the first amplifying transistor is connected to the first input terminal of the output balun, a second output terminal of the first input balun is connected to the input terminal of the second amplifying transistor, and an output terminal of the second amplifying transistor is connected to the second input terminal of the first output balun;

[0013] The first input balun includes a primary coil and a secondary coil, the primary coil has a plurality of primary input terminals arranged at different positions, each of the primary input terminals is connected to an output terminal of a primary control switch, the input terminals of the plurality of primary control switches are connected to the plurality of first input terminals respectively, the secondary coil has a plurality of secondary output terminals arranged at different positions, each of the secondary output terminals is connected to an input terminal of a secondary control switch respectively, the output terminals of the plurality of secondary control switches are connected to the plurality of first output terminals respectively;

[0014] The primary control switch and the secondary control switch are turned on or off according to the control signal, thereby adapting to input radio frequency signals of different frequency bands.

[0015] Optionally, the first input balun includes two first input terminals and two first output terminals, the primary coil includes a first primary input terminal and a correspondingly connected first primary control switch, a second primary input terminal and a correspondingly connected second primary control switch, and the secondary coil includes a first secondary output terminal and a correspondingly connected first secondary control switch, a second secondary output terminal and a correspondingly connected second secondary control switch;

[0016] The input end of the first primary control switch is connected to one of the first input ends, and the output end is connected to the first primary input end; the input end of the second primary control switch is connected to another of the first input ends, and the output end is connected to the second primary input end;

[0017] The input end of the first secondary control switch is connected to the first secondary output terminal, and the output end is connected to one of the first output terminals; the input end of the second secondary control switch is connected to the second secondary output terminal, and the output end is connected to another of the first output terminals;

[0018] When the first input balun is configured to receive a first input RF signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are opened;

[0019] When the first input balun is configured to receive a second input RF signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are opened.

[0020] Optionally, it also includes a first control chip arranged on the substrate, the first control chip is arranged between the first chip and the second chip of the substrate, and the first control chip is configured to control the opening or closing of the multiple primary control switches and the multiple secondary control switches in the first input balun.

[0021] Another push-pull power amplification system is also provided, comprising: a substrate;

[0022] An input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;

[0023] A first chip is disposed on the substrate, wherein the first chip includes a first power amplifier configured to receive the first differential signal and output the first differential signal after amplifying the first differential signal;

[0024] A second chip is disposed on the substrate, the second chip includes a second power amplifier, and is configured to receive the second differential signal, and output the second differential signal after amplification, and the first chip and the second chip are relatively separated and disposed on the substrate;

[0025] an output conversion circuit, configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal;

[0026] The input conversion circuit includes a first input balun and a second input balun, the output conversion circuit also includes a first output balun and a second output balun, the first power amplifier includes a first amplifying transistor and a third amplifying transistor, and the second power amplifier includes a second amplifying transistor and a fourth amplifying transistor;

[0027] The first input terminal of the first input balun is configured to receive a first input RF signal, the second input terminal is connected to a ground terminal or a power terminal, the first output terminal of the first input balun is connected to the input terminal of the first amplifying transistor, the output terminal of the first amplifying transistor is connected to the first input terminal of the first output balun, the second output terminal of the first input balun is connected to the input terminal of the second amplifying transistor, and the output terminal of the second amplifying transistor is connected to the second input terminal of the first output balun;

[0028] The first input terminal of the second input balun is configured to receive a second input RF signal, the second input terminal is connected to the ground terminal or the power supply terminal, the first output terminal of the second input balun is connected to the input terminal of the third amplifying transistor, the output terminal of the third amplifying transistor is connected to the first input terminal of the second output balun, the second output terminal of the second input balun is connected to the input terminal of the fourth amplifying transistor, and the output terminal of the fourth amplifying transistor is connected to the second input terminal of the second output balun.

[0029] Optionally, it also includes a control chipset set on the substrate, the control chipset set is set between the first chip and the second chip of the substrate, the control chipset includes a first sub-control chip and a second sub-control chip, the first sub-control chip is configured to control the bias signals of the first amplifying transistor and the second amplifying transistor, and the second sub-control chip is configured to control the bias signals of the third amplifying transistor and the fourth amplifying transistor.

[0030] Optionally, the third amplifier transistor is arranged on a side of the first amplifier transistor away from the control chipset, the fourth amplifier transistor is arranged on a side of the second amplifier transistor away from the control chipset, the first amplifier transistor and the second amplifier transistor are both adjacent to the control chipset, the first amplifier transistor and the second amplifier transistor are configured to amplify a first input RF signal, and the third amplifier transistor and the fourth amplifier transistor are configured to amplify a second input RF signal, wherein a frequency band of the first input RF signal is greater than a frequency band of the second input RF signal.

[0031] Optionally, the first input balun arranged on the substrate is adjacent to the first amplifying transistor and the second amplifying transistor; the second input balun arranged on the substrate is adjacent to the third amplifying transistor and the fourth amplifying transistor; the first output balun arranged on the substrate is adjacent to the first amplifying transistor and the second amplifying transistor, and the second output balun arranged on the substrate is adjacent to the third amplifying transistor and the fourth amplifying transistor.

[0032] Optionally, the first output balun disposed on the substrate at least partially overlaps with a projection of the control chipset in the longitudinal direction, and the second output balun disposed on the substrate at least partially overlaps with a projection of the control chipset in the longitudinal direction.

[0033] The present invention also provides a radio frequency front-end module, comprising the above-mentioned push-pull power amplification system.

[0034] The push-pull power amplifier system of the present invention comprises a substrate; an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal; a first chip arranged on the substrate, the first chip comprising a first power amplifier configured to receive the first differential signal, and output the first differential signal after amplification; a second chip arranged on the substrate, the second chip comprising a second power amplifier configured to receive the second differential signal, and output the second differential signal after amplification, the first chip and the second chip being arranged relatively separately on the substrate; and an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal. The present invention physically isolates the first power amplifier and the second power amplifier by placing the first power amplifier and the second power amplifier on different chips respectively, thereby avoiding the phenomenon of the first power amplifier and the second power amplifier being heated due to mutual influence caused by heat during operation, improving the heat dissipation of the push-pull power amplifier system, and ultimately ensuring the performance of the push-pull power amplifier system and reducing power consumption loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a schematic structural diagram of a push-pull power amplifier system provided by a first embodiment of the present invention;

[0036] Figure 2 is a schematic structural diagram of a push-pull power amplifier system provided by a second embodiment of the present invention;

[0037] Figure 3 is a schematic structural diagram of a push-pull power amplifier system provided by a third embodiment of the present invention;

[0038] Figure 4 is a schematic structural diagram of a push-pull power amplifier system provided by a fourth embodiment of the present invention;

[0039] Figure 5 is a schematic structural diagram of a push-pull power amplifier system provided by a fifth embodiment of the present invention;

[0040] Figure 6 is a schematic structural diagram of a push-pull power amplifier system provided by a sixth embodiment of the present invention;

[0041] Figure 7 is a schematic structural diagram of a push-pull power amplifier system provided by a seventh embodiment of the present invention;

[0042] Figure 8 2 is a schematic diagram of the structure of a push-pull power amplifier system provided by an eighth embodiment of the present invention.

[0043] The reference numerals in the specification are as follows:

[0044] 1. Input conversion circuit; 11. First input balun; 12. Second input balun; 2. First chip; 21. First power amplifier; 211. First amplifying transistor; 212. Third amplifying transistor; 3. Second chip; 31. Second power amplifier; 311. Second amplifying transistor; 312. Fourth amplifying transistor; 4. Output conversion circuit; 41. First output balun; 42. Second output balun; 5. First control chip; 6. Control chipset; 7. Substrate; S1. First primary control switch; S2. Second primary control switch; S3. First secondary control switch; S4. Second secondary control switch. DETAILED DESCRIPTION

[0045] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0046] like Figure 1 As shown, an embodiment of the present invention provides a push-pull power amplifier system, which includes a substrate 7, an input conversion circuit 1, a first chip 2, a second chip 3 and an output conversion circuit 4. It can be understood that the substrate 7 can be a PCB printed board, and the input conversion circuit 1, the first chip 2, the second chip 3 and the output conversion circuit 4 are arranged on the substrate 7. The input conversion circuit 1 is electrically connected to the input end of the first power amplifier 21 in the first chip 2 and the input end of the second power amplifier 31 in the second chip 3, respectively, and the output end of the first power amplifier 21 and the output end of the second power amplifier 31 are both electrically connected to the output conversion circuit 4.

[0047] The input conversion circuit 1 is configured to convert the input RF signal into a first differential signal and a second differential signal. It is understandable that the input conversion circuit 1 is a circuit for receiving the input RF signal and performing a first conversion on the RF signal, wherein the first conversion process can be set according to the design requirements of the circuit, for example, the first conversion process is to convert the single-ended RF input signal into the first differential signal and the second differential signal through an input balun and then output them, and the input RF signal is a RF signal of any frequency band to be amplified, such as a RF signal of the N77 frequency band, a RF signal of the N79 frequency band, and the like.

[0048] It should be noted that the input conversion circuit 1 may include one or more input baluns. For input RF signals of different frequency bands, only one input balun may be used for conversion, or multiple input baluns may be used to convert RF signals of different frequency bands respectively.

[0049] The first chip 2 is arranged on the substrate 7, and the first chip 2 includes a first power amplifier 21, which is configured to receive the first differential signal and output the first differential signal after amplifying it. It can be understood that the first chip 2 is a semiconductor chip and is arranged on the substrate 7. The first chip 2 contains the first power amplifier 21, that is, the first power amplifier 21 is integrated. The first power amplifier 21 is used to receive the first differential signal, amplify it, and output the amplified first differential signal.

[0050] The second chip 3 is arranged on the substrate 7, and the second chip 3 includes a second power amplifier 31, which is configured to receive the second differential signal, and output the second differential signal after amplification. The first chip 2 and the second chip 3 are relatively separated on the substrate 7. It can be understood that the second chip 3 belongs to a semiconductor chip and is arranged on the substrate 7. The second chip 3 contains the second power amplifier circuit, that is, the second power amplifier 31 is integrated. The second power amplifier 31 is used to receive the second differential signal, amplify it, and output the amplified second differential signal. The first chip 2 and the second chip 3 are relatively separated and arranged at different positions on the substrate 7, that is, the first chip 2 and the second chip 3 are physically isolated on the substrate 7. In this way, through the relatively separated arrangement, the heat dissipation of the first chip 2 and the second chip 3 can be isolated from each other, and the first power amplifier 21 and the second power amplifier 31 will not affect each other due to heat during operation, thereby ensuring effective heat dissipation and improving the heat dissipation of the push-pull power amplifier system. The first power amplifier 21 and the second power amplifier 21 can be composed of one or more power amplifier transistors.

[0051] The output conversion circuit 4 is configured to convert the amplified first differential signal and the amplified second differential signal into an output RF signal. It can be understood that the output conversion circuit 4 performs a second conversion on the received amplified first differential circuit signal and the amplified second differential signal, and finally outputs the output RF signal. The second conversion process can be set according to the design requirements of the circuit. For example, the second conversion process is the process of output balun conversion. The second conversion process can also be the inverse process of the first conversion (input balun conversion), that is, the first differential circuit signal amplified by the first power amplifier and the second differential signal amplified by the second power amplifier are converted and then the output RF signal is output. The output RF signal is the RF signal after differential amplification of the input RF signal.

[0052] It should be noted that the output conversion circuit 4 may include one or more output baluns. For the first differential circuit signal and the second differential signal of different frequency bands, only one output balun may be used for conversion, or multiple input baluns may be used to convert the first differential circuit signal and the second differential signal of different frequency bands respectively.

[0053] Thus, the push-pull power amplifier system of the present invention comprises a substrate 7; an input conversion circuit 1, configured to convert an input radio frequency signal into a first differential signal and a second differential signal; a first chip 2 arranged on the substrate 7, the first chip 2 comprising a first power amplifier 21, configured to receive the first differential signal, and output the first differential signal after amplification; a second chip 3 arranged on the substrate 7, the second chip 3 comprising a second power amplifier 31, configured to receive the second differential signal, and output the second differential signal after amplification, the first chip 2 and the second chip 3 being relatively separated on the substrate 7; and an output conversion circuit 4, configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal. Therefore, the present invention realizes that the first power amplifier 21 and the second power amplifier 31 are placed on different chips respectively, thereby physically isolating the first power amplifier 21 and the second power amplifier 31, improving the heat dissipation of the push-pull power amplifier system, and finally ensuring the performance of the push-pull power amplifier system and reducing power consumption loss.

[0054] In one embodiment, if Figure 2 and Figure 3 As shown, the input conversion circuit 1 includes a first input balun 11, the output conversion circuit 4 includes a first output balun 41, the first power amplifier 21 includes a first amplifier transistor 211, and the second power amplifier 31 includes a second amplifier transistor 311, wherein the first input balun 11 is electrically connected to the first amplifier transistor 211 and the second amplifier transistor 311, and the first output balun 41 is electrically connected to the first amplifier transistor 211 and the second amplifier transistor 311.

[0055] The first input balun 11 includes multiple first input terminals, the first input terminal of the first input balun 11 is configured to receive the input RF signal, the second input terminal is connected to the ground terminal or the power supply terminal, the first input balun 11 includes multiple first output terminals, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the output balun, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41.

[0056] It can be understood that the first input balun 11 converts the unbalanced input RF signal into a two-ended differential signal for long-distance transmission. The first input balun 11 includes a first input terminal, a second input terminal, a first output terminal and a second output terminal. The first input terminal of the first input balun 11 is used to receive the input RF signal. The second input terminal of the first input balun 11 is connected to the ground terminal or the power supply terminal, wherein the power supply terminal can be selected to connect to a provided voltage source or current source according to circuit requirements, such as a voltage source of +5V or +12V, etc., wherein the first output balun 41 includes multiple first input terminals, one second input terminal, multiple first output terminals and one second output terminal.

[0057] The first input balun includes a primary coil and a secondary coil, the primary coil has a plurality of primary input terminals arranged at different positions, each of the primary input terminals corresponds to an output terminal of a primary control switch, the input terminals of the plurality of primary control switches are respectively connected to the plurality of first input terminals, the secondary coil has a plurality of secondary output terminals arranged at different positions, each of the secondary output terminals corresponds to an input terminal of a secondary control switch, the output terminals of the plurality of secondary control switches are respectively connected to the plurality of first output terminals

[0058] It can be understood that the primary coil and the secondary coil in the first input balun 11 are spiral coils formed by winding a metal layer of wire, and different parts of the primary coil have the primary input terminal and the primary control switch, wherein the selection of the primary input terminal at the position of the primary coil can be set according to different frequency bands, that is, a radio frequency signal of one frequency band corresponds to a part of the primary coil, and each of the primary input terminals is connected to an output end of the primary control switch, that is, each of the primary input terminals is controlled by the primary control switch corresponding thereto to control the on and off state, and the secondary coil Different parts have output terminals and control switches, wherein the selection of the secondary output terminals at the position of the secondary coil can be set according to different frequency bands, that is, a radio frequency signal of one frequency band corresponds to a position of the secondary coil, and each secondary output terminal is connected to an input terminal of a secondary control switch, that is, each secondary output terminal is controlled to be turned on and off by the corresponding secondary control switch, the input terminals of the multiple primary control switches are respectively connected to the multiple first input terminals of the input balun, and the output terminals of the multiple secondary control switches are connected to the multiple first output terminals of the input balun. The primary control switch and the secondary control switch are turned on or off according to the control signal, so as to adapt to the input radio frequency signals of different frequency bands.

[0059] It can be understood that there is a one-to-one mapping correspondence between the control signal and the frequency band to which the input RF signal belongs, that is, the control signal can be used to distinguish which frequency band the input RF signal is adapted to. For example, if the input RF signal is an RF signal of the N77 frequency band, then the control signal is a signal for controlling the main control switch and the secondary control switch corresponding to the N77 frequency band. Through the control signal, the host control switch and the secondary control switch corresponding to the N77 frequency band can be controlled to be turned on, and all remaining host control switches and secondary control switches can be turned off. Then, the input RF signal can be processed by the input balun conversion corresponding to the N77 frequency band and the primary coil, and the input RF signal can be processed by the input balun conversion corresponding to the N77 frequency band and the secondary coil, thereby realizing the switching of the main control switches and secondary control switches at different parts of different RF signals and performing corresponding input balun conversion.

[0060] Among them, the input RF signal outputs the first differential signal and the second differential signal under the joint action of the primary coil and the secondary coil of the first input balun 11. In this way, the present invention can switch the primary control switch of the primary coil at different parts and the secondary control switch of the secondary coil for different RF signals through the first input balun 11 including the primary coil and the secondary coil, and perform input balun conversion corresponding to the input RF signal to obtain the first differential signal and the second differential signal, realize the switching of the primary control switch corresponding to the primary coil and the secondary control switch corresponding to the secondary coil according to the control signal, complete the function of the first input balun 11 automatically matching the input RF signal, meet the switching of the input RF signal frequency band diversity, and can achieve the multi-band conversion requirements without expanding the capacity of the substrate 7, saving the space of the substrate 7, reducing the cost, and realizing the flexibility and variability of the first input balun 11.

[0061] In one embodiment, if Figure 3 As shown, the first input balun includes two first input terminals and two first output terminals, the primary coil includes a first primary input terminal and a correspondingly connected first primary control switch S1, a second primary input terminal and a correspondingly connected second primary control switch S2, and the secondary coil includes a first secondary output terminal and a correspondingly connected first secondary control switch S3, a second secondary output terminal and a correspondingly connected second secondary control switch S4.

[0062] The input end of the first main-stage control switch is connected to one of the first input ends, and the output end is connected to the first main-stage input endpoint; the input end of the second main-stage control switch is connected to another of the first input ends, and the output end is connected to the second main-stage input endpoint; the input end of the first secondary-stage control switch is connected to the first secondary-stage output endpoint, and the output end is connected to one of the first output ends; the input end of the second secondary-stage control switch is connected to the second secondary-stage output endpoint, and the output end is connected to another of the first output ends; when the first input balun is configured to receive a first input RF signal, the first main-stage control switch and the first secondary-stage control switch are closed, and the second main-stage control switch and the second secondary-stage control switch are disconnected; when the first input balun is configured to receive a second input RF signal, the second main-stage control switch and the second secondary-stage control switch are closed, and the first main-stage control switch and the first secondary-stage control switch are disconnected.

[0063] It can be understood that the primary coil and the secondary coil are spiral coils formed by winding a wire of a metal layer, and the primary coil includes the first primary input terminal and a correspondingly connected first primary control switch, and the second primary input terminal and a correspondingly connected second primary control switch, the input terminal of the first primary control switch is connected to one of the first input terminals of the input balun, and the input terminal of the second primary control switch is connected to the other first input terminal of the input balun. The secondary coil includes the first secondary output terminal and a correspondingly connected first secondary control switch, and the second secondary output terminal and a correspondingly connected second secondary control switch, the input terminal of the first secondary control switch is connected to the first secondary output terminal, and the output terminal is connected to one of the first output terminals, the input terminal of the second secondary control switch is connected to the second secondary output terminal, and the output terminal is connected to another of the first output terminals.

[0064] When the first input balun 11 is configured to receive a first input RF signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are opened.

[0065] It can be understood that the input RF signal includes a first input RF signal and a second input RF signal, and the first input RF signal and the second input RF signal belong to different frequency bands, for example, the first input RF signal may be an input RF signal of the N77 frequency band, and the second input RF signal may be an input RF signal of the N79 frequency band. When the first input balun 11 is configured to receive the first input RF signal, a control signal is sent through the control chip to control the first main-stage control switch and the first secondary-stage control switch in the first input balun 11 to be closed, and the second main-stage control switch and the second secondary-stage control switch to be disconnected, so as to lead the first secondary-stage output terminal to be connected to the first output terminal of the first input balun 11. For example, the first main-stage input terminal and the first secondary-stage output terminal correspond to the input balun conversion of the N77 frequency band, and a control signal is sent through the control chip to control the first main-stage control switch and the first secondary-stage control switch to be closed, and the second main-stage control switch and the second secondary-stage control switch to be disconnected, so as to output the converted first differential signal and the second differential signal through the first output terminal and the second output terminal of the input balun.

[0066] When the first input balun 11 is configured to receive a second input RF signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are opened.

[0067] It can be understood that when the first input balun 11 is configured to receive a second input RF signal, a control signal is sent through the control chip to control the second main-stage control switch and the second secondary-stage control switch in the first input balun 11 to close, and the first main-stage control switch and the first secondary-stage control switch to disconnect, so as to lead the second secondary-stage output endpoint to be connected to the first output end of the first input balun 11, so that both the first output end and the second output end output the first differential signal and the second differential signal. For example, the second main-stage input endpoint and the second secondary-stage output endpoint correspond to the input balun conversion of the N79 frequency band, and a control signal is sent through the control chip to control the second main-stage control switch and the second secondary-stage control switch to close, and the first main-stage control switch and the first secondary-stage control switch to disconnect, so that the converted first differential signal and the second differential signal are output through the first output end and the second output end of the input balun.

[0068] In this embodiment, the first primary control switch, the second primary control switch, the first secondary control switch, and the second secondary control switch are turned off or on according to the frequency band size of the RF input signal. If the frequency band of the RF input signal is relatively large (for example, the N79 frequency band), the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are turned off, so that the length of the inductance line connected to the primary coil and the secondary coil of the first input balun is relatively short. If the frequency band of the RF input signal is relatively small (for example, the N77 frequency band), the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are turned off, so that the length of the inductance line connected to the primary coil and the secondary coil of the first input balun is relatively long; thereby realizing that the RF input signals of different frequency bands can be adapted by using one first input balun.

[0069] In this way, the present invention realizes that when the first input balun 11 is configured to receive the first input RF signal, the first main control switch and the first secondary control switch are turned off, and the second main control switch and the second secondary control switch are turned off; when the first input balun 11 is configured to receive the second input RF signal, the second main control switch and the second secondary control switch are turned off, and the first main control switch and the first secondary control switch are turned off. This realizes that according to the configured first input RF signal or the second input RF signal, and under the control of the control chip, the first main control switch, the first secondary control switch, the second main control switch and the second secondary control switch in the primary coil and the secondary coil are closed or disconnected, and corresponding conversion output is achieved according to the input RF signals of different frequency bands, thereby meeting the switching of the diversity of the frequency bands of the input RF signals, and the multi-band conversion requirements can be achieved without expanding the capacity of the substrate 7, thereby saving the space of the substrate 7, reducing the cost, and realizing the flexibility and variability of the first input balun 11.

[0070] In one embodiment, if Figure 4 As shown, the input conversion circuit 1 includes a first input balun 11 and a second input balun 12, the output conversion circuit 4 also includes a first output balun 41 and a second output balun 42, the first power amplifier 21 includes a first amplifying transistor 211 and a third amplifying transistor 212, and the second power amplifier 31 includes a second amplifying transistor 311 and a fourth amplifying transistor 312.

[0071] It can be understood that the first power amplifier 21 includes electronic components of the first amplifying transistor 211 and the third amplifying transistor 212, and the first amplifying transistor 211 and the third amplifying transistor 212 are amplifying transistors corresponding to different frequency bands, which can be set according to circuit requirements, for example, the first amplifying transistor 211 is an amplifying transistor suitable for the N79 frequency band, and the third amplifying transistor 212 is an amplifying transistor suitable for the N77 frequency band. The second power amplifier 31 includes electronic components of the second amplifying transistor 311 and the fourth amplifying transistor 312, and the second amplifying transistor 311 and the fourth amplifying transistor 312 are amplifying transistors corresponding to different frequency bands, which can be set according to circuit requirements, for example, the second amplifying transistor 311 is an amplifying transistor suitable for the N79 frequency band, and the fourth amplifying transistor 312 is an amplifying transistor suitable for the N77 frequency band, that is, the first amplifying transistor 211 corresponds to the second amplifying transistor 311, and the third amplifying transistor 212 corresponds to the fourth amplifying transistor 312.

[0072] The first input terminal of the first input balun 11 is configured to receive a first input RF signal, the second input terminal is connected to the ground terminal or the power supply terminal, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the first output balun 41, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41.

[0073] The first input terminal of the second input balun 12 is configured to receive a second input RF signal, the second input terminal is connected to the ground terminal or the power supply terminal, the first output terminal of the second input balun 12 is connected to the input terminal of the third amplifying transistor 212, the output terminal of the third amplifying transistor 212 is connected to the first input terminal of the second output balun 42, the second output terminal of the second input balun 12 is connected to the input terminal of the fourth amplifying transistor 312, and the output terminal of the fourth amplifying transistor 312 is connected to the second input terminal of the second output balun 42.

[0074] It can be understood that the input RF signal includes a first input RF signal and a second input RF signal, and the first input RF signal and the second input RF signal belong to different frequency bands. For example, the first input RF signal can be an input RF signal of the N79 frequency band, and the second input RF signal can be an input RF signal of the N77 frequency band. The first RF signal is converted by the first input balun 11 and input to the input end of the first amplifying transistor 211 through the first output end of the first input balun 11. After amplification by the first amplifying transistor 211, the first RF signal is output through the output end of the first amplifying transistor 211 and transmitted to the first input end of the first output balun 41. At the same time, it is input to the input end of the second amplifying transistor 311 through the second output end of the first input balun 11. After being amplified by the second amplifier transistor 311, the second RF signal is output through the output end of the second amplifier transistor 311 and transmitted to the second input end of the first output balun 41; after being converted by the second input balun 12, the second RF signal is input to the input end of the third amplifier transistor 212 through the first output end of the second input balun 12, and after being amplified by the third amplifier transistor 212, the second RF signal is output through the output end of the third amplifier transistor 212 and transmitted to the first input end of the second output balun 42, and at the same time, the second RF signal is input to the input end of the fourth amplifier transistor 312 through the second output end of the second input balun 12, and after being amplified by the fourth amplifier transistor 312, the second RF signal is output through the output end of the fourth amplifier transistor 312 and transmitted to the second input end of the second output balun 42.

[0075] Thus, the present invention is configured to receive a first input RF signal through the first input terminal of the first input balun 11, the second input terminal is connected to the ground terminal or the power terminal, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the first output balun 41, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41; the first input terminal of the second input balun 12 is configured to receive a second input RF signal , the second input terminal is connected to the ground terminal or the power supply terminal, the first output terminal of the second input balun 12 is connected to the input terminal of the third amplifying transistor 212, the output terminal of the third amplifying transistor 212 is connected to the first input terminal of the second output balun 42, the second output terminal of the second input balun 12 is connected to the input terminal of the fourth amplifying transistor 312, and the output terminal of the fourth amplifying transistor 312 is connected to the second input terminal of the second output balun 42. Therefore, according to the configured first input RF signal or the second input RF signal, the corresponding amplifying transistors of different frequency bands are selected for amplification processing, so as to output the corresponding amplified RF signal. The first power amplifier 21 and the second power amplifier can use corresponding different power amplifying transistors for corresponding amplification output according to the input RF signals of different frequency bands, meet the switching of the diversity of the frequency bands of the input RF signals, and can achieve the amplification requirements of multiple frequency bands without expanding the capacity of the substrate 7, saving the space of the substrate 7, reducing the cost, and realizing the flexibility and variability of the first power amplifier 21 and the second power amplifier 31. And because different input baluns, different amplifying transistors and different output baluns are used to convert and amplify input RF signals of different frequency bands, the push-pull power amplifier system in this embodiment can simultaneously convert and amplify input RF signals of different frequency bands, thereby improving the working efficiency of the push-pull power amplifier system.

[0076] In one embodiment, if Figure 5As shown, the push-pull power amplifier system also includes a first control chip 5 disposed on a substrate 7, the first control chip 5 being disposed between the first chip 2 and the second chip 3 of the substrate 7, and the first control chip being configured to control the opening or closing of the multiple primary control switches and the multiple secondary control switches in the first input balun. Specifically, the first control chip 5 is used as a control chip for controlling the input conversion circuit 1 to adapt to the input RF signals of different frequency bands, and the control signal sent by the first control chip 5 controls the first input balun 11 in the input conversion circuit 1 to switch different primary control switches and secondary control switches for input RF signals of different frequency bands, thereby controlling the input conversion circuit 1 to switch the switches for input RF signals of different frequency bands.

[0077] Further, the first control chip 5 is respectively connected to the first bias port on the first chip 2 and the second bias port on the second chip 3. It is understandable that the first control chip 5 can be set according to circuit requirements, and the first control chip is respectively controlled to provide corresponding bias current or / and bias voltage for the bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and the bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 according to input RF signals of different frequency bands, the first bias port is the port on the bias circuit in the first chip 2 connected to the first control chip 5 through the pin line, and the second bias port is the port on the bias circuit in the second chip 3 connected to the control chip through the pin line, for example, the first control chip 5 can include a plurality of CMOS transistors, and the bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and the bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 are controlled by the on-off state of the CMOS transistors to provide corresponding bias current or / and bias voltage, thereby satisfying the switching requirements of the first chip 2 and the second chip 3 for input RF signals of different frequency bands.

[0078] In one embodiment, if Figure 6As shown, the push-pull power amplifier system further includes a control chip group 6 disposed on a substrate 7, the control chip group 6 being disposed between the first chip 2 and the second chip 3 of the substrate, the control chip group 6 including a first sub-control chip and a second sub-control chip, the first sub-control chip being configured to control the bias signals of the first amplifying transistor and the second amplifying transistor, and the second sub-control chip being configured to control the bias signals of the third amplifying transistor and the fourth amplifying transistor. Specifically, the first sub-control chip is respectively connected to the first bias port on the first chip 2 and the second bias port on the second chip 3, and the second sub-control chip is respectively connected to the third bias port on the first chip 2 and the fourth bias port on the second chip 3. It is understandable that the control chip group 6 can be set according to circuit requirements. In this embodiment, when the first power amplifier includes the first amplifying transistor and the third amplifying transistor, and the second power amplifier includes the second amplifying transistor and the fourth amplifying transistor, the first sub-control chip is respectively used to control the bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and the bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 according to the input RF signals of different frequency bands. The second sub-control chip is used to control the bias circuit corresponding to the third amplifying transistor 212 of the first chip 2 and the bias circuit corresponding to the fourth amplifying transistor 312 of the second chip 3 respectively according to the input RF signals of different frequency bands. The third bias port is a port on the bias circuit in the first chip 2 connected by the control chip through the pin line, and the fourth bias port is a port on the bias circuit in the second chip 3 connected by the control chip through the pin line. For example, the first sub-control chip and the second sub-control chip may include a plurality of CMOS transistors, and the bias circuit in the first chip 2 and the bias circuit in the second chip 3 are controlled by the on-off state of the CMOS transistors to provide corresponding bias currents and / or bias voltages, so as to complete the switching of the bias circuits of the first chip 2 and the second chip 3, thereby meeting the switching requirements of the first chip 2 and the second chip 3 for input RF signals of different frequency bands. At the same time, the control chipset 6 can also be used as a control chip to control the input conversion circuit 1 to adapt to the input RF signals of different frequency bands. The control signal emitted by the control chipset 6 controls the switching of the first input balun 11 and the second input balun 12 in the input conversion circuit 1, and different input baluns are switched for input RF signals of different frequency bands, thereby controlling the input conversion circuit 1 to switch different input baluns for input RF signals of different frequency bands.

[0079] In this embodiment, the control chip group 6 may include only one sub-control chip, that is, only one control chip may be used to control the amplifying transistors of different frequency bands, that is, multiple different pins are set in one control chip, and are led to the bias circuits corresponding to the amplifying transistors of different frequency bands through different pin lines; the control chip group 6 may include multiple sub-control chips, that is, multiple control chips may be used to control the amplifying transistors of different frequency bands, that is, one control chip controls the amplifying transistors of one frequency band. By using one control chip to control the amplifying transistors of different frequency bands, the push-pull power amplification system can be reduced. By using multiple control chips to control the amplifying transistors of different frequency bands, the phenomenon of signal interference can be avoided when the amplifying transistors of different frequency bands are amplifying at the same time.

[0080] In one embodiment, if Figure 7 As shown, the third amplifying transistor 212 is arranged on a side of the first amplifying transistor 211 away from the control chipset 6, the fourth amplifying transistor 312 is arranged on a side of the second amplifying transistor 311 away from the control chipset 6, and the first amplifying transistor 311 and the second amplifying transistor 311 are both adjacent to the control chipset 6. The first amplifying transistor and the second amplifying transistor are configured to amplify a first input RF signal, and the third amplifying transistor and the fourth amplifying transistor are configured to amplify a second input RF signal, wherein the frequency band of the first input RF signal is greater than the frequency band of the second input RF signal.

[0081] It can be understood that the first amplifying transistor 211 and the third amplifying transistor 212 are disposed on the first chip 2 , and the second amplifying transistor 311 and the fourth amplifying transistor 312 are disposed on the second chip 3 . Preferably, the first amplifying transistor 211 and the second amplifying transistor 311 are amplifying transistors suitable for the N79 frequency band, the third amplifying transistor 212 and the fourth amplifying transistor 312 are amplifying transistors suitable for the N77 frequency band, the first input balun 41 is arranged at a position adjacent to both the first amplifying transistor 211 and the second amplifying transistor 311, and the second input balun 42 is arranged at a position adjacent to both the third amplifying transistor 212 and the fourth amplifying transistor 312. By arranging the first amplifying transistor 211 and the second amplifying transistor 311 in the first chip 2 and the third amplifying transistor 212 and the fourth amplifying transistor 312 in the second chip 3 to be physically isolated in space, the heat between the first chip 2 and the second chip 3 can be spatially separated, which is convenient for heat dissipation, and the situation in which heat accumulation aggravates the temperature rise will not occur, and the signal transmission on the circuit will not be affected, thereby improving the heat dissipation of the push-pull power amplifier system, and ultimately ensuring the performance of the push-pull power amplifier system and reducing power consumption loss.

[0082] In one embodiment, the first output balun 41 disposed on the substrate 7 at least partially overlaps with the projection of the first control chip 5 in the longitudinal direction, and the second output balun 42 disposed on the substrate 7 at least partially overlaps with the projection of the first control chip 5 in the longitudinal direction.

[0083] It can be understood that the first output balun 41 and the second control chip 6 are arranged on different layers of the substrate, and the first output balun 41 and the first control chip 5 have at least partially overlapping component parts in their longitudinal projections, and the second output balun 42 and the first control chip 5 are arranged on different layers of the substrate, and the second output balun 42 and the second control chip 6 have at least partially overlapping component parts in their longitudinal projections. In this way, the routing of the first control chip 5 and the first output balun 41 on the substrate 7 can be more convenient and the performance can be optimized, which is convenient for the first control chip 5 to transmit signals to the first output balun 41, and the routing of the second control chip 6 and the second output balun 42 on the substrate 7 can be more convenient and the performance can be optimized, which is convenient for the second control chip 6 to transmit signals to the second output balun 42, thereby making the switching of the first output balun 41 and the second output balun 42 faster and more accurate, improving the output performance of the push-pull power amplifier system, and being able to reduce the wiring path of the substrate, thereby reducing the area of ​​the substrate, saving the substrate cost, and reducing the processing cost.

[0084] In one embodiment, if Figure 8 As shown, the first input balun 11 disposed on the substrate 7 is disposed adjacent to the first amplifying transistor 211 and the second amplifying transistor 311 ; the second input balun 12 disposed on the substrate 7 is disposed adjacent to the third amplifying transistor 212 and the fourth amplifying transistor 312 . The first output balun 41 is arranged on the substrate 7 adjacent to the first amplifier transistor 211 and the second amplifier transistor 311, and the second output balun 42 is arranged on the substrate 7 adjacent to the third amplifier transistor 212 and the fourth amplifier transistor 312. In this way, the routing of the first amplifier transistor 211 and the second amplifier transistor 311 output to the first output balun 41 can be more convenient and the performance can be optimized, so that the signal of the first amplifier transistor 211 and / or the second amplifier transistor 311 can be transmitted to the first output balun 41 with the lowest loss, and the routing of the third amplifier transistor 212 and the fourth amplifier transistor 312 output to the second output balun 42 can be more convenient and the performance can be optimized, so that the signal of the third amplifier transistor 212 and / or the fourth amplifier transistor 312 can be transmitted to the second output balun 42 with the lowest loss, thereby making the output of the first output balun 41 and the second output balun 42 faster and more accurate, thereby improving the output performance of the push-pull power amplifier system.

[0085] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A push-pull power amplifier system, characterized in that: include: substrate; An input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal, the input conversion circuit comprising one or more input baluns; A first chip is disposed on the substrate, the first chip includes a first power amplifier, and is configured to receive the first differential signal, amplify the first differential signal, and then output; a second chip disposed on the substrate, the second chip comprising a second power amplifier configured to receive the second differential signal and amplify the second differential signal before outputting it, the first chip and the second chip being relatively separated and disposed on the substrate; The output conversion circuit is configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal, and the output conversion circuit includes one or more output baluns.

2. The push-pull power amplifier system according to claim 1, characterized in that: The input conversion circuit includes a first input balun, the output conversion circuit includes a first output balun, the first power amplifier includes a first amplifying transistor, and the second power amplifier includes a second amplifying transistor; The first input balun comprises a plurality of first input terminals, the first input terminal of the first input balun is configured to receive the input RF signal, and the second input terminal is connected to a ground terminal or a power terminal; The first input balun includes multiple first output terminals, the first output terminal of the first input balun is connected to the input terminal of the first amplifying transistor, the output terminal of the first amplifying transistor is connected to the first input terminal of the output balun, the second output terminal of the first input balun is connected to the input terminal of the second amplifying transistor, and the output terminal of the second amplifying transistor is connected to the second input terminal of the first output balun.

3. The push-pull power amplifier system according to claim 2, characterized in that: The first input balun includes a primary coil and a secondary coil, and the primary coil and the secondary coil are spiral coils formed by winding a metal layer of wire. The primary coil has a plurality of primary input terminals arranged at different positions, each of the primary input terminals corresponds to the output terminal of a primary control switch, and the input terminals of the plurality of primary control switches are respectively connected to the plurality of first input terminals. The secondary coil has a plurality of secondary output terminals arranged at different positions, each of the secondary output terminals corresponds to the input terminal of a secondary control switch, and the output terminals of the plurality of secondary control switches are respectively connected to the plurality of first output terminals.

4. The push-pull power amplifier system as claimed in claim 3, characterized in that: The primary control switch and the secondary control switch are turned on or off according to the control signal, thereby adapting to input radio frequency signals of different frequency bands.

5. The push-pull power amplifier system according to claim 1, characterized in that: The input RF signal includes a first input RF signal and a second input RF signal. The first input end of the input conversion circuit is configured to receive the first input RF signal, and the second input end of the input conversion circuit is configured to receive the second input RF signal. The first input RF signal and the second input RF signal belong to different frequency bands.

6. The push-pull power amplifier system as claimed in claim 2, characterized in that: The first input balun includes two first input terminals and two first output terminals, and the first input balun also includes a primary coil and a secondary coil, the primary coil includes a first primary input terminal and a first primary control switch connected to it, a second primary input terminal and a second primary control switch connected to it, and the secondary coil includes a first secondary output terminal and a first secondary control switch connected to it, a second secondary output terminal and a second secondary control switch connected to it; The input end of the first primary control switch is connected to one of the first input ends, and the output end is connected to the first primary input end; the input end of the second primary control switch is connected to another of the first input ends, and the output end is connected to the second primary input end; The input end of the first secondary control switch is connected to the first secondary output terminal, and the output end is connected to one of the first output terminals. The input end of the second secondary control switch is connected to the second secondary output terminal, and the output end is connected to another of the first output terminals.

7. The push-pull power amplifier system according to claim 6, characterized in that: When the first input balun is configured to receive a first input RF signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are opened; When the first input balun is configured to receive a second input RF signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are opened.

8. The push-pull power amplifier system as claimed in claim 3, characterized in that: It also includes a first control chip arranged on the substrate, wherein the first control chip is arranged between the first chip and the second chip of the substrate, and the first control chip is configured to control the opening or closing of multiple primary control switches and multiple secondary control switches in the first input balun.

9. The push-pull power amplifier system as claimed in claim 8, characterized in that: The first control chip is respectively connected to a first bias port on the first chip and a second bias port on the second chip, wherein the first bias port is a port on the bias circuit in the first chip connected to the first control chip through a pin line, and the second bias port is a port on the bias circuit in the second chip connected to the first control chip through a pin line.

10. The push-pull power amplifier system according to claim 1, characterized in that: The input conversion circuit includes a first input balun and a second input balun, the output conversion circuit also includes a first output balun and a second output balun, the first power amplifier includes a first amplifying transistor and a third amplifying transistor, and the second power amplifier includes a second amplifying transistor and a fourth amplifying transistor; The first input terminal of the first input balun is configured to receive a first input RF signal, the second input terminal is connected to a ground terminal or a power terminal, the first output terminal of the first input balun is connected to the input terminal of the first amplifying transistor, the output terminal of the first amplifying transistor is connected to the first input terminal of the first output balun, the second output terminal of the first input balun is connected to the input terminal of the second amplifying transistor, and the output terminal of the second amplifying transistor is connected to the second input terminal of the first output balun; The first input terminal of the second input balun is configured to receive a second input RF signal, the second input terminal is connected to a ground terminal or a power supply terminal, the first output terminal of the second input balun is connected to the input terminal of the third amplifying transistor, the output terminal of the third amplifying transistor is connected to the first input terminal of the second output balun, the second output terminal of the second input balun is connected to the input terminal of the fourth amplifying transistor, and the output terminal of the fourth amplifying transistor is connected to the second input terminal of the second output balun; The first amplifying transistor and the third amplifying transistor are amplifying transistors corresponding to different frequency bands, the second amplifying transistor and the fourth amplifying transistor are amplifying transistors corresponding to different frequency bands, and the frequency band of the first amplifying transistor corresponds to that of the second amplifying transistor, and the frequency band of the third amplifying transistor corresponds to that of the fourth amplifying transistor.

11. The push-pull power amplifier system according to claim 10, characterized in that: It also includes a control chipset set on the substrate, the control chipset set is set between the first chip and the second chip of the substrate, the control chipset includes a first sub-control chip and a second sub-control chip, the first sub-control chip is configured to control the bias signals of the first amplifying transistor and the second amplifying transistor, and the second sub-control chip is configured to control the bias signals of the third amplifying transistor and the fourth amplifying transistor.

12. The push-pull power amplifier system according to claim 11, characterized in that: The first sub-control chip is respectively connected to a first bias port on the first chip and a second bias port on the second chip, and the second sub-control chip is respectively connected to a third bias port on the first chip and a fourth bias port on the second chip.

13. The push-pull power amplifier system according to claim 11, characterized in that: The third amplifier transistor is arranged on a side of the first amplifier transistor away from the control chipset, the fourth amplifier transistor is arranged on a side of the second amplifier transistor away from the control chipset, the first amplifier transistor and the second amplifier transistor are both adjacent to the control chipset, the first amplifier transistor and the second amplifier transistor are configured to amplify a first input RF signal, the third amplifier transistor and the fourth amplifier transistor are configured to amplify a second input RF signal, wherein a frequency band of the first input RF signal is greater than a frequency band of the second input RF signal.

14. The push-pull power amplifier system according to claim 11, characterized in that: The first input balun disposed on the substrate is disposed adjacent to the first amplifying transistor and the second amplifying transistor; the second input balun disposed on the substrate is disposed adjacent to the third amplifying transistor and the fourth amplifying transistor; The first output balun disposed on the substrate is disposed adjacent to the first amplifying transistor and the second amplifying transistor, and the second output balun disposed on the substrate is disposed adjacent to the third amplifying transistor and the fourth amplifying transistor.

15. The push-pull power amplifier system according to claim 13, characterized in that: The first output balun disposed on the substrate at least partially overlaps with a projection of the control chipset in the longitudinal direction, and the second output balun disposed on the substrate at least partially overlaps with a projection of the control chipset in the longitudinal direction.

16. A radio frequency front-end module, characterized in that: Comprising a push-pull power amplifier system as described in any one of claims 1-15.

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