A substrate processing chamber

Abstract

The present invention relates to the technical field of semiconductor production and processing equipment, and specifically to a substrate processing chamber, which is connected to a wafer transfer chamber and comprises: a chamber body; a heating element; and at least one substrate supporting structure; the heating element is arranged in the chamber body and is used to adjust the temperature inside the chamber body so as to reduce etching byproducts on the surface of the substrate; the substrate supporting structure is arranged in the chamber body, and the first surface of the substrate supporting structure is used to place the substrate; a gate valve is arranged at the connection between the chamber body and the wafer transfer chamber, and the gate valve is used to control the temperature of the heating element through the substrate and an external power supply, so as to adjust the temperature of the entire chamber body to achieve heating of the substrate on the substrate supporting structure, reduce the thickness of the base in the prior art, make more reasonable use of the space of the chamber body, and avoid space waste.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor production equipment, in particular to a substrate processing chamber. Background Art

[0002] When the baking equipment used in the wet etching process actually dries the substrate, the substrate is transferred from the chamber of the transmission module to the base in the baking equipment through the robot in the transmission module to achieve heating of the substrate. In the prior art, the heating module is generally arranged in the base to achieve heating of the substrate on the base. This design method will leave space inside the base for designing the heating module, making the base thick and heavy, and occupying a large space. In addition, due to the wear and tear of the device, once the heating module fails, it is very inconvenient to disassemble and assemble the base. Therefore, there are many inconveniences in subsequent maintenance. At the same time, other ancillary equipment using the above scheme also needs to be improved, which will cause the problem of increased cost. Summary of the invention

[0003] In view of the above shortcomings of the prior art, an object of the present invention is to provide a substrate processing chamber, which is convenient for heating the chamber, convenient for maintenance of the heating module, reduces the space occupied by the supporting base supporting the substrate, and improves the space utilization of the processing chamber.

[0004] To achieve the above-mentioned object and other related objects, the present invention provides a substrate processing chamber, which is connected to a wafer transfer chamber and includes: a chamber body; a heating element; at least one substrate supporting structure;

[0005] The heating element is disposed in the chamber body and is used to adjust the temperature inside the chamber body so as to volatilize the etching byproducts on the surface of the substrate;

[0006] The substrate supporting structure is disposed inside the chamber body, and the first surface of the substrate supporting structure is used for placing the substrate;

[0007] A gate valve is provided at the connection between the chamber body and the wafer transfer chamber, and the gate valve is used for passing the substrate.

[0008] In an optional embodiment of the present invention, the wafer transfer chamber includes a robot, and a lifting mechanism is further provided inside the chamber body, wherein the lifting mechanism is fixedly connected to a central area of ​​a second surface of the substrate supporting structure, and the second surface is opposite to the first surface;

[0009] The lifting mechanism is used to adjust the height of the substrate supporting structure so that when the manipulator performs the first operation or the second operation, the height difference between the substrate supporting structure and the gate valve is within a preset range;

[0010] The first operation includes the robot placing a substrate on the substrate supporting structure through the gate valve, and the second operation includes the robot taking away the substrate on the substrate supporting structure through the gate valve.

[0011] In an optional embodiment of the present invention, the preset range is -10 to 10 mm;

[0012] In an optional embodiment of the present invention, when two or more substrate supporting structures are disposed inside the chamber body, side walls of all the substrate supporting structures are fixed on a first supporting fixture, and the substrate supporting structures are aligned in a direction perpendicular to the first surface, and there is a preset spacing between adjacent substrate supporting structures;

[0013] The lifting mechanism is fixedly connected to the central area of ​​the second surface of the substrate supporting structure, and comprises:

[0014] The lifting mechanism is fixedly connected to the central area of ​​the second surface of the target substrate supporting structure, and the target substrate supporting structure is the bottommost one among all the substrate supporting structures.

[0015] In an optional embodiment of the present invention, the preset spacing is 5 to 70 mm.

[0016] In an optional embodiment of the present invention, a slot or a screw hole is provided on the first supporting fixing member along the preset interval for fixing the substrate supporting structure.

[0017] In an optional embodiment of the present invention, the substrate supporting structure comprises: a disc, a first supporting column and a second supporting column;

[0018] The first supporting column and the second supporting column are relatively fixedly arranged at the edge of the disk to support the substrate.

[0019] In an optional embodiment of the present invention, the lifting mechanism comprises: a second supporting fixing member, a sliding member and a screw rod;

[0020] The sliding member is hollow and thick-walled, and is sleeved with the screw rod. The inner side of the sliding member is provided with a thread that matches the surface of the screw rod.

[0021] The first end of the second supporting fixture is fixedly disposed on the top of the screw rod, and the second end of the second supporting fixture is fixedly connected to the central area of ​​the second surface of the substrate supporting structure;

[0022] The height of the substrate supporting structure is adjusted by rotating the bottom of the screw.

[0023] In an optional embodiment of the present invention, it also includes a temperature detection unit and a temperature control unit arranged on the outside of the chamber body, the temperature detection unit is used to feedback the temperature of the heating element, and the temperature control unit is used to control the temperature of the heating element within 100-250 degrees Celsius.

[0024] In an optional embodiment of the present invention, the heating element is arranged on the outside of the chamber body, including: the heating elements are arranged at equal intervals on the top of the chamber body.

[0025] By adopting the above technical scheme, the technical effect of the utility model is that the heating element for heating the substrate is installed on the chamber body, and the temperature of the heating element is controlled by an external power supply, so that the temperature of the entire chamber body can be adjusted to achieve heating of the substrate on the substrate supporting structure, replacing the existing base heating method, which can significantly reduce the thickness of the base in the prior art, improve the space utilization of the chamber body as much as possible, and reduce the problem of space waste in the processing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a plan block diagram of an etching system in one embodiment of the present invention;

[0027] Figure 2 is a top plan view of an etching chamber in one embodiment of the present invention;

[0028] Figure 3 It is a main plan view block diagram of an etching chamber in one embodiment of the present invention;

[0029] Figure 4 A plan view of the cooperation between the lifting mechanism and the substrate supporting structure in one embodiment of the present invention;

[0030] Figure 5 is a plan view of a lifting mechanism in one embodiment of the present invention;

[0031] Figure 6 is a plan view of a lifting mechanism in another embodiment of the present invention;

[0032] Figure 7 A front view of a substrate supporting structure in one embodiment of the present invention;

[0033] Figure 8 A top view of a substrate supporting structure in one embodiment of the present invention;

[0034] Fig. 9 FIG. 1 is a bottom view of a substrate supporting structure in one embodiment of the present invention.

[0035] Description of labels:

[0036] Substrate A; lifting mechanism B; chamber body 10; gate valve 11; disc 21; first support column 22; second support column 23; screw 30; sliding member 31; second support fixing member 32; heating member 40; manipulator 50; first support fixing member 60; lifting connecting rod 70, lifting rack 71; lifting gear 72; support slide rod 73. DETAILED DESCRIPTION

[0037] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0038] It should be noted that the illustrations provided in the following embodiments are only used to illustrate the basic concept of the present invention in a schematic manner, and thus the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0039] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

[0040] In the description herein, many specific details, such as examples of components and / or methods, are provided to provide a complete understanding of embodiments of the present invention. However, those skilled in the art will recognize that embodiments of the present invention may be practiced without one or more of the specific details or with other devices, systems, components, methods, components, materials, parts, etc. In other cases, well-known structures, materials, or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the present invention.

[0041] References throughout this specification to "one embodiment," "an embodiment," or "a specific embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention, and not necessarily in all embodiments. Thus, various appearances of the phrases "in one embodiment," "in an embodiment," or "in a specific embodiment" in different places throughout this specification do not necessarily refer to the same embodiment. In addition, the particular features, structures, or characteristics of any specific embodiment of the invention may be combined with one or more other embodiments in any suitable manner. It should be understood that other variations and modifications of the embodiments of the invention described and illustrated herein may be possible in light of the teachings herein and are to be considered part of the spirit and scope of the invention.

[0042] It should also be understood that one or more of the elements shown in the figures may also be implemented in a more separate or more integrated manner, or even removed because they are inoperable in certain circumstances or provided because they may be useful depending on the application.

[0043] In addition, unless otherwise explicitly indicated, any marking arrows in the drawings should be regarded as exemplary only and not limiting. In addition, unless otherwise indicated, the term "or" used herein is generally intended to mean "and / or". In the case where the term is not clear because it is anticipated that the ability to separate or combine is provided, the combination of components or steps will also be regarded as indicated.

[0044] As used in the description herein and throughout the claims that follow, "a", "an", and "the" include plural references unless otherwise indicated. Likewise, as used in the description herein and throughout the claims that follow, the meaning of "in" includes "in" and "on" unless otherwise indicated.

[0045] See also Figure 1As shown, we make a detailed description of the substrate processing chamber of the present invention in combination with the entire etching system, wherein the etching system used in the wet etching process mainly includes an equipment front end (EFEM), a transmission module (TM), and a process module (PM), wherein the equipment front end mainly transfers the substrate generated in the previous step of the handling equipment to the etching system, and the handling equipment includes a wafer loader, a handling robot, an overhead crane, etc.; the wafer transmission module is mainly used to transport and transmit the substrate in the etching system; the process module etches the substrate to produce related physical and chemical reactions; the above three modules provide guarantee support, and the layout is relatively independent. When the above three modules are actually arranged, chambers separated from the outside world are set between each module. The wafer transfer module chamber is generally located in the center of the entire etching system. The equipment front end and the process module chamber are arranged around the transfer module chamber. When the production line is started, the robot in the transfer module chamber transfers the substrates exported from the equipment front end to the process module chamber one by one for etching. The process module chamber also includes one or more baking chambers. When the etched substrate is transferred to the baking chamber by the robot of the transfer module for baking, the chemical corrosion agents, water vapor, generated impurities and the like remaining on the surface and gaps of the substrate can be baked away. In the existing method, the heating module for heating the substrate in the baking chamber is mainly arranged on the base supporting the substrate, which increases the thickness of the base, and the number of bases arranged in the entire baking chamber in the horizontal or vertical space will be affected, so that the ability to process substrates in a single baking chamber will be limited.

[0046] For this, see Figure 2 , Figure 3 and Figure 4 The present invention provides a substrate processing chamber, which is connected to a wafer transfer chamber, and includes: a chamber body 10; a heating element 40; and at least one substrate supporting structure; the heating element 40 is arranged in the chamber body 10, and is used to adjust the temperature inside the chamber body 10 so that the etching by-products on the surface of the substrate A are volatilized; the substrate supporting structure is arranged in the chamber body 10, and the first surface a of the substrate supporting structure is used to place the substrate A; a gate valve 11 is arranged at the connection between the chamber body 10 and the wafer transfer chamber, and the gate valve 11 is used to pass the substrate A.

[0047] It should be understood that the first surface a of the substrate supporting structure is a supporting surface for supporting substrate A. In actual applications, the first surface a is a horizontal plane. For the purpose of stably supporting substrate A, a gate valve 11 is provided at the connection between the chamber body 10 and the wafer transfer chamber. Substrate A can be transferred from the wafer transfer chamber to the substrate supporting structure through the gate valve 11, or the processed substrate A on the substrate supporting structure can be guided out from the gate valve 11 to achieve the purpose of transferring substrate A.

[0048] By rearranging the heating element 40 in the chamber body 10, replacing the existing solution of installing the heating module on the base, and controlling the temperature of the heating element 40 through an external power supply, the temperature of the entire chamber body 10 can be adjusted to achieve heating of the substrate A on the substrate supporting structure, so that the substrate supporting structure occupies a small volume and maximizes the use of the internal space of the chamber body 10, thereby reducing the waste of space in the chamber body 10.

[0049] In one embodiment of the present invention, refer to Figure 2 and Figure 3 In order to realize the transmission of substrate A between the wafer transmission chamber and the chamber body 10, the wafer transmission chamber includes a robot 50, and a lifting mechanism B is also arranged inside the chamber body 10, and the lifting mechanism B is fixedly connected to the central area of ​​the second surface b of the substrate supporting structure 20a, and the second surface b is opposite to the first surface a; the lifting mechanism B is used to adjust the height of the substrate supporting structure 20a, so that when the robot 50 performs the first operation or the second operation, the height difference between the height of the substrate supporting structure 20a and the height of the gate valve 11 is within a preset range; the first operation includes the robot 50 placing the substrate A on the substrate supporting structure 20a through the gate valve 11, and the second operation includes the robot 50 taking away the substrate A on the substrate supporting structure 20a through the gate valve 11.

[0050] In one embodiment, at least one gate valve 11 is provided on one side wall of the chamber body 10, and the robot 50 passes through or extends into the gate valve 11 in a horizontal supporting manner to achieve the transfer of the substrate A. The gate valve 11 constitutes an opening connecting the wafer transfer chamber and the chamber body 10. In actual applications, the upper and lower heights of the opening are limited, and the height that the robot 50 can reach is also limited by the width of the gate valve 11. Therefore, in order to achieve the transfer of substrate A and to adapt to the pick-up and placement position of the robot 50, the lifting mechanism B is fixedly connected to the central area of ​​the second surface b of the substrate supporting structure 20a. It should be understood that the second surface b is arranged away from the first surface a, that is, the substrate supporting structure 20a is away from the lower supporting surface of the substrate A supporting surface. The height of the substrate supporting structure 20a can be adjusted by the set lifting mechanism B so that it is located near the upper and lower horizontal plane where the gate valve 11 is located.

[0051] In one embodiment, see Figure 3 and Figure 4 The lifting mechanism B and the second surface b of the substrate supporting structure 20a are fixedly connected by welding, bonding, etc., so that the lifting mechanism B and the second surface b of the substrate supporting structure 20a are fixed as a whole, and then the substrate supporting structure 20a can be synchronously driven up and down.

[0052] In one embodiment, the fixed connection between the lifting mechanism B and the second surface b of the substrate supporting structure 20a may be a snap connection, a pin connection, or a screw connection, so that the lifting mechanism B and the substrate supporting structure 20a can be assembled and disassembled.

[0053] Specifically, when the lifting mechanism B drives the substrate supporting structure 20a to move, Figure 3 , the lifting mechanism B can drive the substrate supporting structure 20a to stay beside the gate valve 11, so that the height of the first surface a of the substrate supporting structure 20a and the height of the gate valve 11 are within a preset range. It should be understood that when it is necessary to place the substrate A to be baked on the first surface a of the substrate supporting structure, or to take out the substrate A that has been baked on the first surface a of the substrate supporting structure, the lifting mechanism B needs to adjust the substrate supporting structure 20a in the vertical direction to the horizontal pick-up and placement position of the manipulator 50, so that the manipulator 50 is inserted into the gate valve 11 and is located beside the first surface a of the substrate supporting structure 20a. The mechanical claws on the manipulator 50 release the substrate A to be baked and just combine with the first surface a of the substrate supporting structure 20a for support, or the mechanical claws on the manipulator 50 are tightly clamped to just take out the baked substrate A on the first surface a of the substrate supporting structure 20a.

[0054] In one embodiment, the height of the robot 50 in the wafer transfer chamber can be adjusted by lifting the lifting platform, or the bottom end of the robot 50 can remain in position unchanged. The lifting mode of the robot 50 needs to be arranged according to the width of the gate valve 11 and the position of the first surface a of the substrate supporting structure 20a, so as to be able to accurately pass through the gate valve 11 and reliably realize the placement and removal of the substrate A.

[0055] When the lifting mechanism B actually adjusts the height of the first surface a of the substrate supporting structure 20a, the preset range of the height difference between the first surface a of the substrate supporting structure 20a and the gate valve 11 is -10 to 10 mm, and the height difference can be 10 mm, -5 mm, -3 mm, 0 mm, 2 mm, 5 mm, 8 mm, 10 mm, etc.

[0056] Among them, in one embodiment, when the height difference between the first surface a of the substrate supporting structure 20a and the gate valve 11 is a negative difference, the difference is controlled within 10 mm, that is, the height of the first surface a of the substrate supporting structure 20a is lower than the gate valve 11. At this time, when the manipulator 50 passes through the gate valve 11, the manipulator 50 can approach the first surface a of the substrate supporting structure 20a in a translational manner, and can move to a position directly above the first surface a of the substrate supporting structure 20a to achieve the taking and placing of the substrate A.

[0057] In one embodiment, when the height difference between the first surface a of the substrate supporting structure 20a and the height of the gate valve 11 is 0, that is, the first surface a of the substrate supporting structure 20a is exactly flush with the gate valve 11, when the manipulator 50 passes through the gate valve 11 at this time, the manipulator 50 can approach the first surface a of the substrate supporting structure 20a in a horizontal push manner, and can move to both sides of the first surface a of the substrate supporting structure 20a. The manipulator 50 can grab the edge of the substrate A to achieve the taking and placing of the substrate A.

[0058] In another embodiment, when the height difference between the first surface a of the substrate supporting structure 20a and the height of the gate valve 11 is a positive difference, the difference is controlled within 10 mm, that is, the height of the first surface a of the substrate supporting structure 20a is higher than the slit. At this time, when the manipulator 50 passes through the gate valve 11, the manipulator 50 is close to the first surface a of the substrate supporting structure 20a. The manipulator 50 can be fine-tuned to raise the manipulator 50 and move it to a position directly above the first surface a of the substrate supporting structure 20a to achieve the taking and placing of the substrate A; or the first surface a of the substrate supporting structure 20a can be lowered by adjusting the lifting mechanism B, so that the first surface a of the substrate supporting structure 20a is flush with the manipulator 50, or the manipulator 50 is located above the first surface a of the substrate supporting structure 20a to achieve the taking and placing of the substrate A.

[0059] When the substrate supporting structure is arranged in the chamber body 10, refer to Figure 3 and Figure 4 , two or more substrate supporting structures are arranged inside the chamber body 10. When two or more substrate supporting structures are arranged inside the chamber body 10, the side walls of all the substrate supporting structures are fixed on the first supporting fixing member 60, and the substrate supporting structures are aligned in a direction perpendicular to the first surface a, and there is a preset spacing between adjacent substrate supporting structures; the lifting mechanism is fixedly connected to the central area of ​​the second surface b of the substrate supporting structure 20a, including: the lifting mechanism is fixedly connected to the central area of ​​the second surface b of the target substrate supporting structure 20a, and the target substrate supporting structure 20a is the bottom one among all the substrate supporting structures 20a.

[0060] In one embodiment, two or more substrate supporting structures are arranged at equal intervals in the vertical direction, and multiple groups of substrate supporting structures are arranged at equal intervals along the longitudinal direction of the chamber body 10. When the substrate supporting structures have equal thickness, more substrate supporting structures can be arranged in the chamber body 10 with a constant longitudinal space, and the robot 50 can place a larger number of substrates A on the first surface a of the substrate supporting structure for baking operations, thereby significantly improving the production efficiency of a single chamber body 10.

[0061] See attached Figure 3 and Figure 4 Specifically, five substrate supporting structures are arranged at intervals along the vertical direction of the first supporting fixing member 60, which are 20a, 20b, 20c, 20d, and 20e from bottom to top. The substrate supporting structure 20a at the bottom is the target substrate supporting structure 20a mentioned above. The target substrate supporting structure 20a is connected to the lifting mechanism B to achieve height adjustment of the entire substrate.

[0062] In one embodiment, two or more substrate supporting structures may be arranged in multiple rows (not shown in the figure) in the lateral space of the chamber body 10. The number of substrate supporting structures located in the horizontal plane is reasonably set according to the length and width of the chamber body 10. The preset spacing between adjacent substrate supporting structures remains equal. When the substrate supporting structure receives the heat radiation from the heating element 40 in the chamber body 10, it can reliably bake the substrate A to ensure that impurities are removed. In addition, the substrate supporting structures arranged at equal intervals can ensure good ventilation between the substrates A, which can effectively improve the volatilization efficiency of impurities generated by baking on the substrate A.

[0063] It should be understood that, in the case where there are two or more substrate supporting structures and the preset spacings between adjacent substrate supporting structures are not equal, the spacing between the substrate supporting structures can be changed according to the baking effect of the heating element 40 on the substrate A on the substrate supporting structure, so that the substrate supporting structure receiving lower heat radiation is closer to the heating element 40, to ensure that the substrates A in a single chamber body 10 can be effectively dried and transferred to the next process equipment in a high-quality state.

[0064] In a preferred embodiment, see Figure 3 and Figure 4 The preset spacing between adjacent substrate supporting structures is 5 to 70 mm, which can be maintained at a spacing of 5 mm, 10 mm, 20 mm, 30 mm, 40 mm, 50 mm, 60 mm, or 70 mm. The substrate supporting structure and the first supporting fixture 60 are fixedly connected or adjustable. The connection position of the substrate supporting structure at the first supporting fixture 60 is adjusted to achieve adjustment of the spacing between adjacent substrate supporting structures, thereby achieving arbitrary adjustment of the spacing between adjacent substrate supporting structures within a range of 5 to 70 mm.

[0065] In order to realize the connection between the substrate supporting structure and the first supporting fixing member 60, a slot or a screw hole is provided on the first supporting fixing member 60 along the preset interval for fixing the substrate supporting structure.

[0066] In one embodiment, the first supporting fixing member 60 is rod-shaped or plate-shaped and is vertically arranged in the chamber body 10. A card slot or a threaded hole is provided on the first supporting fixing member 60, and a card joint or a mounting screw is correspondingly provided on the substrate supporting structure, so as to realize the fixed connection between the substrate supporting structure and the first supporting fixing member 60; a card slot or a threaded hole may also be provided on the substrate supporting structure, and a card joint or a mounting screw may be provided on the first supporting fixing member 60, so as to realize the connection between the two.

[0067] In one embodiment, the first supporting fixture 60 is made of aluminum, ceramic, or high temperature resistant plastic material, which can ensure stable support for the substrate supporting structure and avoid deformation.

[0068] Preferably, see Figure 7 The substrate supporting structure 20a includes: a disk 21, a first supporting column 22 and a second supporting column 23; the first supporting column 22 and the second supporting column 23 are relatively fixedly arranged at the edge position of the disk 21 for supporting the substrate A.

[0069] In one embodiment, see Figure 8 A first support column 21 and a second support column 23 are set on the first surface a of the substrate supporting structure 20a, and are fixed at the edge of the first surface a, that is, the edge of the disc 21, to support the substrate A, so that there is a distance between the substrate A and the disc 21, ensuring that both sides of the substrate A are baked, and the substrate A on the first support column 22 and the second support column 23 can be conveniently picked up by the robot 50.

[0070] In one embodiment, the thickness of the disk 21 is 3-20 mm, preferably 5-10 mm, which can ensure the strength of the disk 21 itself while making the thickness of the substrate supporting structure as small as possible;

[0071] In one embodiment, the height of the first and second support pillars is about 5 mm to ensure that the substrate A is separated from the disk 21 .

[0072] In one embodiment, the substrate supporting structure and the first and second supporting columns 22 and 23 are all made of aluminum, ceramic, or plastic. The plastic material must withstand a certain high temperature to avoid deformation. The substrate supporting structure and the first and second supporting columns 22 and 23 can preferably be made of ceramic material, which is not easily deformed and has strong high temperature resistance.

[0073] In one embodiment of the present invention, refer to Figure 5The lifting mechanism B includes a second supporting fixing member 32, a sliding member 31 and a screw rod 30; the sliding member 31 is arranged in a shape wrapping the screw rod 30 and sleeved on the screw rod 30, and the inner side of the sliding member 31 is provided with a thread matching the surface of the screw rod 30; the first end of the second supporting fixing member 32 is fixedly arranged on the top of the screw rod 30, and the second end of the second supporting fixing member 32 is fixedly connected to the central area of ​​the second surface b of the substrate supporting structure 20a; the height of the substrate supporting structure 20a is adjusted by rotating the bottom of the screw rod 30.

[0074] Specifically, the second supporting fixing member and the screw are vertically arranged in the chamber body 10 and are located below the substrate supporting structure 20a. A high-precision motor is installed at the bottom of the chamber body 10. The sliding member 31 is driven to rotate by the high-precision motor. A ball is arranged in the thread on the surface of the screw 30. The ball is constrained in the thread groove on the surface of the screw 30 where the sliding member 31 is located. The rotation of the sliding member 31 can realize the driving of the screw 30 to lift the second supporting fixing member 32 at the upper end of the screw 30, so that the second supporting fixing member 32 can adjust the height of the substrate supporting structure 20a. The lifting mechanism B can achieve accurate control of the height of the substrate supporting structure 20a to ensure that the robot 50 can accurately pick up and place the substrate A.

[0075] In one embodiment of the present invention, refer to Figure 6 The lifting mechanism B includes a lifting connecting rod 70, a supporting slide bar 73, a lifting rack 71 and a lifting gear 72; the lifting connecting rod 70 and the supporting slide bar 73 are both arranged vertically, the upper end of the lifting connecting rod 70 is connected to the central area of ​​the second surface b of the substrate supporting structure 20a, and the lower end forms a sliding guide with the supporting slide bar 73, and the lifting rack 71 is arranged at the lower end of the lifting connecting rod 70; the lifting rack 71 and the lifting gear 72 are connected to each other, and by starting the power mechanism B and driving the lifting gear 72 to rotate, the lifting connecting rod 70 and the substrate supporting structure 20a can be adjusted in the vertical direction.

[0076] A high-precision motor is installed on the lifting gear 72. By driving the lifting gear 72 to rotate through the high-precision motor, the lifting connecting rod 70 can be lifted and lowered. This mechanism can achieve highly accurate control of the substrate supporting structure 20a to ensure that the robot 50 can accurately pick up and place the substrate A.

[0077] In order to achieve effective control of the heating and baking temperature of the substrate A in the chamber body 10, it also includes a temperature detection unit and a temperature control unit arranged on the outside of the chamber body 10, the temperature detection unit is used to feedback the temperature of the heating element 40, and the temperature control unit is used to control the temperature of the heating element 40 at 100-250 degrees Celsius.

[0078] In a preferred embodiment, the heating element 40 is disposed on the outside of the chamber body 10 , including: the heating element 40 is disposed on the top of the chamber body 10 at equal intervals.

[0079] In one embodiment, see Figure 2 The heating element 40 is a heating rod embedded in the top of the chamber body 10. The number of the heating rods is not limited, and the positions of the heating rods are not limited. They can be arranged according to the power of the heating rods and the internal space of the baking chamber so that the heat radiation generated by the heating rods can evenly cover the baking chamber.

[0080] In one embodiment, the heating element 40 can be arranged on the outer wall of the chamber body 10, and a protective cover is wrapped around the outside of the chamber body 10. The protective cover can be made of fireproof and heat-insulating materials to ensure reliable heating of the chamber body 10 while avoiding other problems caused by excessive temperature.

[0081] In a preferred embodiment, the chamber body 10 is a rectangular chamber, a temperature sensor is provided on the heating element 40, and the heating element 40 is vertically embedded in the wall of the baking chamber.

[0082] In one embodiment, the temperature detection unit is the temperature sensor. The temperature sensor detects the temperature signal in the chamber body 10 in real time and feeds it back to the external temperature control unit. The temperature control unit controls the output power of the heating element 40 according to the temperature signal. For example, when the temperature in the chamber body 10 is lower than 130 degrees Celsius, the temperature control unit sends a control signal to increase the input current of the heating element 40 and increase the power of the heating element 40 to increase the temperature of the chamber body 10. When the temperature sensor detects that the temperature is around 140 degrees Celsius, the temperature control unit sends a control signal to maintain the stability of the input current, thereby ensuring the temperature of the heating power of the heating element 40 to achieve the effect of keeping the chamber body 10 warm.

[0083] In a preferred embodiment, the temperature of the heating element 40 is adjusted to about 140° C. to facilitate the subsequent processing of the substrate A.

[0084] In summary, by rearranging the heating element 40 in the chamber body 10, replacing the existing solution of installing the heating module on the base, and controlling the temperature of the heating element 40 through an external power supply, the temperature of the entire chamber body 10 can be adjusted to achieve heating of the substrate A on the substrate supporting structure, so that the substrate supporting structure occupies a small volume, and a larger number of substrate supporting structures can be arranged in a single chamber body 10, so as to significantly increase the number of substrates A loaded by a single chamber body 10, thereby improving the drying efficiency of the single chamber body 10 for the substrate A, so as to increase the output of the entire production line, and by setting a lifting mechanism B connected with the substrate supporting structure, it is possible to achieve precise pushing of the substrate A on the substrate supporting structure, and precisely control the position of the substrate A and the pick-up and placement position of the robot 50, so as to achieve precise transportation of the substrate A and avoid damage to the substrate A during transportation.

[0085] The above description of the illustrated embodiments of the present invention (including the contents described in the Abstract) is not intended to be an exhaustive list or to limit the present invention to the precise form disclosed herein. Although specific embodiments of the present invention and examples of the present invention are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present invention as will be recognized and appreciated by those skilled in the art. As noted, these modifications may be made to the present invention in accordance with the above description of the embodiments described in the present invention, and these modifications will be within the spirit and scope of the present invention.

[0086] Systems and methods have been generally described herein as details that aid in understanding the present invention. In addition, various specific details have been given to provide an overall understanding of embodiments of the present invention. However, those skilled in the relevant art will recognize that embodiments of the present invention may be practiced without one or more of the specific details, or may be practiced using other devices, systems, accessories, methods, components, materials, parts, etc. In other cases, well-known structures, materials, and / or operations are not specifically shown or described in detail to avoid confusion with various aspects of embodiments of the present invention.

[0087] Thus, although the invention has been described herein with reference to specific embodiments thereof, freedom of modification, various changes and substitutions are also within the foregoing disclosure, and it should be understood that in some cases, some features of the invention will be employed without the corresponding use of other features without departing from the scope and spirit of the proposed invention. Thus, many modifications may be made to adapt a particular environment or material to the essential scope and spirit of the invention. The invention is not intended to be limited to the specific terms used in the claims below and / or the specific embodiments disclosed as the best mode contemplated for carrying out the invention, but the invention will include any and all embodiments and equivalents falling within the scope of the appended claims. Thus, the scope of the invention will be determined solely by the appended claims.

Claims

1. A substrate processing chamber, the substrate processing chamber is connected to a wafer transfer chamber, characterized in that: include: A chamber body, wherein a lifting mechanism is also arranged inside the chamber body; Heating element; Two or more substrate supporting structures; The heating element is arranged in the chamber body, and the heating element is embedded in the top of the chamber body or arranged at equal intervals on the top of the outer side of the chamber body, and is used to adjust the temperature inside the chamber body so that the etching byproducts on the surface of the substrate are volatilized; The substrate supporting structure is disposed inside the chamber body, and the first surface of the substrate supporting structure is used for placing the substrate; The lifting mechanism is fixedly connected to the central area of ​​the second surface of the substrate supporting structure, and the second surface is opposite to the first surface; The lifting mechanism is fixedly connected to the central area of ​​the second surface of the substrate supporting structure, comprising: the lifting mechanism is fixedly connected to the central area of ​​the second surface of the target substrate supporting structure, the target substrate supporting structure being the bottommost one of all the substrate supporting structures; There is only one first supporting and fixing member in the chamber body, which is in the shape of a rod or a plate and is vertically arranged in the chamber body, and all side walls of the substrate supporting structure are fixed on the first supporting and fixing member, and the top of the lifting mechanism is higher than the bottom of the first supporting and fixing member; A gate valve is provided at the connection between the chamber body and the wafer transfer chamber, and the gate valve is used for passing the substrate.

2. The substrate processing chamber according to claim 1, wherein the wafer transfer chamber comprises a robot, characterized in that: The lifting mechanism is used to adjust the height of the substrate supporting structure so that when the manipulator performs the first operation or the second operation, the height difference between the substrate supporting structure and the gate valve is within a preset range; The first operation includes the robot placing a substrate on the substrate supporting structure through the gate valve, and the second operation includes the robot taking away the substrate on the substrate supporting structure through the gate valve.

3. The substrate processing chamber according to claim 2, characterized in that: The preset range is -10 to 10 mm.

4. The substrate processing chamber according to claim 2, characterized in that: The substrate supporting structures are aligned with each other in a direction perpendicular to the first surface, and there is a preset distance between adjacent substrate supporting structures.

5. The substrate processing chamber according to claim 4, characterized in that: The preset spacing is 5 to 70 mm.

6. The substrate processing chamber according to claim 4, characterized in that: The first supporting fixing member is provided with slots or screw holes along the preset interval for fixing the substrate supporting structure.

7. The substrate processing chamber according to claim 1, characterized in that: The substrate supporting structure comprises: a disc, a first supporting column and a second supporting column; The first supporting column and the second supporting column are relatively fixedly arranged at the edge of the disk to support the substrate.

8. The substrate processing chamber according to claim 2, characterized in that: The lifting mechanism comprises: a second supporting fixing member, a sliding member and a screw rod; The sliding member is arranged in a shape wrapping the screw rod and sleeved with the screw rod, and the inner side of the sliding member is provided with a thread matching the surface of the screw rod; The first end of the second supporting fixture is fixedly disposed on the top of the screw rod, and the second end of the second supporting fixture is fixedly connected to the central area of ​​the second surface of the substrate supporting structure; The height of the substrate supporting structure is adjusted by rotating the bottom of the screw.

9. The substrate processing chamber according to claim 1, characterized in that: It also includes a temperature detection unit and a temperature control unit arranged outside the chamber body, the temperature detection unit is used to feed back the temperature of the heating element, and the temperature control unit is used to control the temperature of the heating element within 100-250 degrees Celsius.

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