Reaction chamber and thin film deposition equipment

Abstract

The present invention provides a reaction chamber and a thin film deposition device. The reaction chamber comprises: a film conveying port; a movable block, which is arranged below the film conveying port and has an inner side wall and an outer side wall; a cylinder pushing assembly, which is installed below the movable block; and a guide rail assembly, which is arranged on both sides of the movable block; wherein, when a process is performed, the cylinder pushing assembly drives the movable block to rise, so that the movable block assembly rises along the guide rail assembly until the film conveying port space is blocked.

Description

Technical Field

[0001] The present invention relates to semiconductor processing equipment, and in particular to semiconductor thin film deposition equipment. Background Art

[0002] The principle of thin film deposition technology is to place the wafer in a reaction chamber, introduce an appropriate amount of reaction gas, and use the physical changes and chemical reactions of the reaction gas to form a solid thin film on the wafer surface.

[0003] The reaction chamber is provided with a film transfer port, through which the wafer is transferred to the support inside the chamber for thin film deposition. The wafer after thin film deposition is transferred out of the reaction chamber through the film transfer port. Due to the existence of the film transfer port, the structure of the reaction chamber is asymmetric.

[0004] Due to the asymmetry of the reaction chamber and the thermal deformation under high-temperature working environment, the structure of the chamber film transfer port is weaker and the total deformation is greater than that in other directions, resulting in asymmetric deformation of the connected spray plate, affecting the process effect, such as film uniformity.

[0005] Therefore, an improved reaction chamber structure is urgently needed to improve the uniformity of film formation during high-temperature operation. Summary of the invention

[0006] In order to improve the uniformity of film formation during high-temperature operation, the present invention provides a reaction chamber.

[0007] The reaction chamber comprises a film transmission port, a movable block, a cylinder driving component and a guide rail component.

[0008] The movable block is arranged below the film transmission port and has an inner side wall and an outer side wall.

[0009] The cylinder pushing assembly is installed below the movable block.

[0010] The guide rail assembly is arranged on both sides of the movable block.

[0011] When the process is being carried out, the cylinder pushes the movable block to rise, so that the movable block assembly rises along the guide rail assembly until the film transmission port space is blocked.

[0012] In one embodiment, the outer side wall of the movable block is aligned with the side wall of the reaction chamber, so that when the movable block moves up until the outer wall of the reaction chamber is closed, its outer side wall is flush with the side wall of the reaction chamber.

[0013] In one embodiment, the inner side wall of the movable block is arc-shaped.

[0014] In one embodiment, the inner side wall of the movable block is in contact with the outer periphery of the wafer supporting plate in the reaction chamber.

[0015] In one embodiment, when the movable block is driven upward by the cylinder pushing assembly until the film transmission port space is blocked, the internal structure of the reaction chamber is symmetrical.

[0016] The present invention also provides a thin film deposition device, comprising a shower plate and a reaction chamber.

[0017] The spray plate is located at the upper part of the reaction chamber.

[0018] The reaction chamber comprises a film transmission port, a movable block, a cylinder driving component and a guide rail component.

[0019] The movable block is arranged below the film transmission port and has an inner side wall and an outer side wall.

[0020] The cylinder pushing assembly is installed below the movable block.

[0021] The guide rail assembly is arranged on both sides of the movable block.

[0022] When the process is being carried out, the cylinder pushes the movable block to rise, so that the movable block assembly rises along the guide rail assembly until the film transmission port space is blocked.

[0023] In one embodiment, the outer side wall of the movable block is aligned with the side wall of the reaction chamber, so that when the movable block moves up until the outer wall of the reaction chamber is closed, its outer side wall is flush with the side wall of the reaction chamber.

[0024] In one embodiment, the inner side wall of the movable block is arc-shaped.

[0025] In one embodiment, the inner side wall of the movable block is in contact with the outer periphery of the wafer supporting plate in the reaction chamber.

[0026] In one embodiment, when the movable block is driven upward by the cylinder pushing assembly until the film transmission port space is blocked, the internal structure of the reaction chamber is symmetrical.

[0027] The reaction chamber structure provided by the present invention enables part of the chamber structure to move upward to block the film transfer port space during the process to resist a part of thermal deformation, thereby improving the uniformity of film formation during high-temperature operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above invention content and the following specific embodiments of the present invention will be better understood when read in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are only examples of the claimed invention. In the accompanying drawings, the same reference numerals represent the same or similar elements.

[0029] Figure 1 The internal structure of a thin film deposition device is shown;

[0030] Figure 2 The structure of a reaction chamber according to an embodiment of the present invention is shown;

[0031] Figure 3 A side view of a reaction chamber structure according to an embodiment of the present invention is shown;

[0032] Figure 4 A cross-sectional view showing a reaction chamber structure according to an embodiment of the present invention;

[0033] Figure 5 A three-dimensional cross-sectional view of a reaction chamber structure according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0034] The detailed features and advantages of the present invention are described in detail in the specific embodiments below, and the content is sufficient to enable any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the description, claims and drawings disclosed in this specification, those skilled in the art can easily understand the relevant purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0035] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0037] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, channels, components, regions, layers and / or parts, these components, channels, components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, components, regions, layers and / or parts. In addition, the terms "first", "second", "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0038] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0039] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "roughly", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "roughly", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0040] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0041] Figure 1 The internal structure of a thin film deposition device is shown. The thin film deposition device includes a shower plate 101 and a reaction chamber 103. The shower plate 101 is located at the upper part of the reaction chamber 103. The reaction gas enters the shower plate 101 through the air inlet pipeline and finally enters the reaction chamber 103.

[0042] A wafer transfer port 102 is provided in the reaction chamber, which opens at the side wall of the thin film deposition device and communicates with the outside. The wafer is transferred to the wafer support inside the reaction chamber 103 through the wafer transfer port 102 for a process, such as thin film deposition. After the process is completed, the wafer is transferred out of the reaction chamber 103 through the wafer transfer port 102. Due to the existence of the wafer transfer port 102, the structure of the reaction chamber 103 is asymmetric.

[0043] Due to the asymmetry of the reaction chamber 103 and the thermal deformation in the high-temperature working environment, the structure in the direction of the chamber film transfer port 102 is relatively weak, and its total deformation is greater than that in other directions, resulting in asymmetric deformation of the connected spray plate 101, affecting the process effect, such as film uniformity.

[0044] In order to improve the uniformity of film formation during high-temperature operation, the present invention provides a reaction chamber.

[0045] The reaction chamber comprises a film transmission port, a movable block, a cylinder driving component and a guide rail component.

[0046] The movable block is arranged below the film transmission port and has an inner side wall and an outer side wall.

[0047] The cylinder pushing assembly is installed below the movable block.

[0048] The guide rail assembly is arranged on both sides of the movable block.

[0049] When a process is to be carried out, the cylinder pushes the movable block to rise, so that the movable block assembly rises along the guide rail assembly until the film transfer port space is blocked.

[0050] In one embodiment, the outer side wall of the movable block is aligned with the side wall of the reaction chamber, so that when the movable block moves up until the outer wall of the reaction chamber is closed, its outer side wall is flush with the side wall of the reaction chamber.

[0051] In one embodiment, the inner side wall of the movable block is arc-shaped.

[0052] In one embodiment, the inner side wall of the movable block is in contact with the outer periphery of the wafer supporting plate in the reaction chamber.

[0053] In one embodiment, when the movable block is driven upward by the cylinder pushing assembly until the film transmission port space is blocked, the internal structure of the reaction chamber is substantially symmetrical.

[0054] The present invention also provides a thin film deposition device, comprising a shower plate and a reaction chamber.

[0055] The spray plate is located at the upper part of the reaction chamber.

[0056] The reaction chamber comprises a film transmission port, a movable block, a cylinder driving component and a guide rail component.

[0057] The movable block is arranged below the film transmission port and has an inner side wall and an outer side wall.

[0058] The cylinder pushing assembly is installed below the movable block.

[0059] The guide rail assembly is arranged on both sides of the movable block.

[0060] When a process is to be carried out, the cylinder pushes the movable block to rise, so that the movable block assembly rises along the guide rail assembly until the film transfer port space is blocked.

[0061] In one embodiment, the outer side wall of the movable block is aligned with the side wall of the reaction chamber, so that when the movable block moves up until the outer wall of the reaction chamber is closed, its outer side wall is flush with the side wall of the reaction chamber.

[0062] In one embodiment, the inner side wall of the movable block is arc-shaped.

[0063] In one embodiment, the inner side wall of the movable block is in contact with the outer periphery of the wafer supporting plate in the reaction chamber.

[0064] In one embodiment, when the movable block is driven upward by the cylinder pushing assembly until the film transmission port space is blocked, the internal structure of the reaction chamber is substantially symmetrical.

[0065] The reaction chamber structure provided by the present invention enables part of the chamber structure to move upward to block the film transfer port space during the process to resist a part of thermal deformation, thereby improving the uniformity of film formation during high-temperature operation.

[0066] Figure 2 The reaction chamber structure according to an embodiment of the present invention is shown in FIG. The reaction chamber of the present invention comprises a film conveying port 101 , a movable block 203 , a cylinder pushing assembly 201 and a guide rail assembly 202 .

[0067] The movable block 203 is disposed below the film transfer port 101 .

[0068] In one embodiment, the maximum width of the movable block 203 is the same as the width of the film transmission port 101. The length of the movable block 203 is the same as the length of the film transmission port 101.

[0069] It should be clarified that the above width refers to Figure 5 The above length refers to Figure 5 The x direction in .

[0070] The cylinder pushing assembly 201 is installed below the movable block 203 .

[0071] The guide rail assemblies 202 are disposed on both sides of the movable block 203 .

[0072] When the film transfer is finished or the process is in progress, the cylinder push component 201 drives the movable block 203 to rise, so that the movable block component above the cylinder push component 201 rises along the guide rail component 202 until the film transfer port space is blocked.

[0073] At this time, when viewed from outside the reaction chamber, the outer wall of the reaction chamber is closed without any opening, thereby being able to resist thermal deformation on the film transfer port side.

[0074] Figure 3 A side view of a reaction chamber structure according to an embodiment of the present invention is shown.

[0075] Figure 4 A cross-sectional view of a reaction chamber structure according to an embodiment of the present invention is shown.

[0076] like Figure 3 and Figure 4 As shown, the film transfer port 101 can be filled by the movable block 203 located below during the process. That is, the movable block 203 moves upward under the joint action of the guide rail assembly 202 and the cylinder push assembly 201 until the outer wall of the chamber is closed, so that the internal structure of the reaction chamber is symmetrical.

[0077] Figure 5 FIG. 2 shows a three-dimensional cross-sectional view of a reaction chamber structure according to an embodiment of the present invention. Figure 5 As shown, the movable block 203 has an outer side wall and an inner side wall. The outer side wall is aligned with the side wall of the reaction chamber, so that when the movable block 203 moves up until the outer wall of the chamber is closed, its side wall is flush with the side wall of the reaction chamber. The inner side wall of the movable block 203 is arc-shaped and fits the outer periphery of the wafer support plate.

[0078] When the movable block 203 moves upward, the film transfer port in the reaction chamber is blocked, making the chamber structure roughly symmetrical. This symmetry greatly improves the problem that the total deformation of the film transfer port position at high temperature is greater than that in other directions, thereby further improving the uniformity of film formation during high temperature operation.

[0079] The terms and expressions used above are for descriptive purposes only, and the present invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean to exclude any equivalent features of the illustrations and descriptions (or parts thereof), and it should be recognized that various modifications that may exist should also be included in the scope of the claims. Other modifications, changes and substitutions may also exist. Accordingly, the claims should be deemed to cover all such equivalents.

[0080] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus facilitate the understanding of one or more embodiments of the invention, in the foregoing description of the embodiments of this application, multiple features are sometimes combined into one embodiment, drawing or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims.

[0081] Similarly, it should be pointed out that although the present invention has been described with reference to the current specific embodiments, ordinary technicians in this technical field should realize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions may be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A reaction chamber, characterized in that: The reaction chamber comprises: Film transmission port; A movable block is arranged below the film transmission port and has an inner wall and an outer wall; A cylinder push assembly installed below the movable block; and Guide rail assemblies, arranged on both sides of the movable block; When the process is being carried out, the cylinder push component drives the movable block to rise, so that the movable block component rises along the guide rail component until the film transmission port space is blocked; The maximum width of the movable block is the same as the width of the film transmission port; the outer wall of the movable block is aligned with the side wall of the reaction chamber, so that when the movable block moves up until the outer wall of the reaction chamber is closed, its outer wall is flush with the side wall of the reaction chamber.

2. The reaction chamber according to claim 1, characterized in that: The inner side wall of the movable block is arc-shaped.

3. The reaction chamber according to claim 1, characterized in that: The inner side wall of the movable block is in contact with the outer periphery of the wafer supporting plate in the reaction chamber.

4. The reaction chamber according to claim 1, characterized in that: When the movable block is driven upward by the cylinder pushing assembly until the film transmission port space is blocked, the internal structure of the reaction chamber is symmetrical.

5. A thin film deposition device, characterized in that: include: Spray plate and reaction chamber; The spray plate is located at the upper part of the reaction chamber; The reaction chamber comprises: Film transmission port; A movable block is arranged below the film transmission port and has an inner wall and an outer wall; A cylinder push assembly installed below the movable block; and Guide rail assemblies, arranged on both sides of the movable block; When the process is being carried out, the cylinder push component drives the movable block to rise, so that the movable block component rises along the guide rail component until the film transmission port space is blocked; The maximum width of the movable block is the same as the width of the film transmission port; the outer wall of the movable block is aligned with the side wall of the reaction chamber, so that when the movable block moves up until the outer wall of the reaction chamber is closed, its outer wall is flush with the side wall of the reaction chamber.

6. The thin film deposition device according to claim 5, characterized in that: The inner side wall of the movable block is arc-shaped.

7. The thin film deposition device according to claim 5, characterized in that: The inner side wall of the movable block is in contact with the outer periphery of the wafer supporting plate in the reaction chamber.

8. The thin film deposition device according to claim 5, characterized in that: When the movable block is driven upward by the cylinder pushing assembly until the film transmission port space is blocked, the internal structure of the reaction chamber is symmetrical.

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