A thin film deposition apparatus and a deposition method thereof

Abstract

The present invention belongs to the technical field of semiconductor product manufacturing, and the present invention also relates to a thin film deposition method. A corresponding curved reflector (30) is respectively arranged at the position of each evaporation source (20), a planar reflector (40) is further arranged at the lower part of the coating chamber wall (10), a beam splitter (50) is arranged in the middle of the coating chamber wall (10), the beam splitter (50) comprises a plurality of beam splitter components (52), a planar reflector (40) is further arranged on the side of the beam splitter (50), and heating components (13) are respectively arranged in the planar reflector (40), the curved reflector (30) and the beam splitter components (52). The thin film deposition device and the deposition method thereof according to the present invention ensure that the gaseous materials or material particles emitted by the material source have high directivity during the thin film deposition process, convert the point source or line source device in various vapor deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy into a surface source, eliminate the shadow effect, improve the deposition uniformity, and improve the product performance.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor product manufacturing, and more specifically, relates to a thin film deposition device, and the present invention also relates to a thin film deposition method. Background Art

[0002] In gas phase deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy, in order to make the prepared materials or devices have higher uniformity and more delicate structures, it is often necessary for the gaseous materials or material particles emitted by the material source (such as evaporation source) to have a high directivity during the thin film deposition process. Currently, most of the material sources used in vacuum coating technologies such as vacuum thermal evaporation and molecular beam epitaxy are point sources or line sources. The material beams emitted from these material sources often have different incident angles with respect to the normal of the substrate, resulting in shadow effects and non-uniformity of thin film deposition. In vacuum coating technologies such as vacuum thermal evaporation and molecular beam epitaxy, the gaseous material beams (atomic beams, ion beams, molecular beams or other forms of material beams, etc.) emitted by point sources or line sources are emitted in an approximately straight line and fly in the vacuum chamber. When they encounter the cavity wall substrate, condensation wall, mask plate, substrate or other device surfaces, adsorption, secondary evaporation or reflection will occur. The incident angle is defined as the angle between the velocity direction of the atomic beam, molecular beam or material particles, etc. when they collide with the substrate and the normal of the substrate. The incident angle is generally between 0-90°. The smaller the incident angle, the better the quality and uniformity of the thin film deposition generally, and the smaller the effective size of the delicate structure of the thin film device. In view of this, the surface source technology has received certain attention and a large amount of research has been carried out. A surface source refers to a coating source with a planar structure. Compared with point or line sources, the atomic beams, molecular beams or material particles, etc. emitted by the surface source can be incident on the substrate vertically, so its incident angle is 0°. Currently, the surface sources in the field of vacuum thermal evaporation generally first co-evaporate the materials of the point source or line source onto an intermediate substrate with a lower temperature, turn the intermediate substrate towards the final substrate and heat it, so that the material thin film on the intermediate substrate evaporates onto the final substrate as a whole surface. These surface source technologies have many difficulties, low efficiency and high costs, and are difficult to promote in a short time.

[0003] In the prior art, there is a technology with the name "Thin Film Deposition Equipment and Thin Film Deposition Method" and the publication number "103103480A". The thin film deposition equipment of this technology includes a thin film deposition chamber, and the thin film deposition chamber includes: a chamber housing that encloses the chamber of the thin film deposition chamber; a target holder disposed in the middle of the chamber for placing a target composed of component A; a substrate stage disposed in the middle of the chamber and opposite to the target holder; a laser inlet disposed on the side of the chamber housing and obliquely opposite to the target holder, for incident laser to bombard the target on the target holder to generate a plasma plume; a beam source furnace interface disposed on the side of the chamber housing and obliquely opposite to the substrate stage, for incident molecular beam flux composed of component B; the laser inlet and the beam source furnace interface simultaneously incident laser and molecular beam flux. The present invention can effectively avoid the mutual interference between the pulsed laser deposition film formation process and the molecular beam epitaxy film formation process, and can prepare films with better quality and films that cannot be prepared at all by the prior art.

[0004] However, this technology does not involve the technical problems and technical solutions of the present application. Summary of the Invention

[0005] The technical problem to be solved by the present invention is: aiming at the deficiencies of the prior art, to provide a thin film deposition device with a simple structure, low cost, convenient and reliable use, ensuring that the gaseous materials or material particles emitted by the material source have high directivity during the thin film deposition process, converting the point source or line source device in various vapor deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy into a surface source, eliminating the shadow effect, improving the uniformity of thin film deposition, and ultimately improving the product performance.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is:

[0007] The present invention is a thin film deposition device. A plurality of evaporation sources are arranged at the lower part of the coating chamber wall, and corresponding curved reflectors are respectively arranged at the positions of each evaporation source. A plane reflector is also arranged at the lower part of the coating chamber wall. A beam splitter is arranged in the middle of the coating chamber wall. The beam splitter includes a plurality of beam splitter components, and each beam splitter component is arranged in a structure with an acute angle with the horizontal direction. A plane reflector is also arranged on the side of the beam splitter, and the plane reflector is arranged in a structure with an acute angle with the horizontal direction. Heating components are respectively arranged in the plane reflector, the curved reflector, and the beam splitter component.

[0008] A substrate and a mask plate are arranged from top to bottom at the upper part of the coating chamber wall. The substrate is a silicon wafer; the diameter of the mask plate is larger than the diameter of the substrate.

[0009] The plurality of beam splitter components of the beam splitter are arranged from top to bottom, and an acute angle structure is formed between two adjacent beam splitter components.

[0010] Each evaporation source includes a nozzle respectively. The nozzles of each evaporation source are aligned with a curved reflector, and each curved reflector corresponds to a planar reflector.

[0011] A planar reflector corresponding to each curved reflector is parallel to a corresponding beam splitter assembly. Each beam splitter assembly of the beam splitter is a quadrangular prism structure, and the angle of each beam splitter assembly relative to the horizontal direction is less than 30°.

[0012] The heating component described above is a resistance wire.

[0013] The surfaces of the curved reflector and the straight reflector are single-crystalline silicon (100) surfaces, and the surface roughness is less than 0.5 nm; the shape of the planar reflector is rectangular, the shape of the curved reflector is a trough-shaped paraboloid, and the beam splitter is composed of multiple quadrangular prism-shaped beam splitter assemblies arranged.

[0014] The thin film deposition device also includes a molecular beam epitaxy coating device, and the molecular beam epitaxy coating device includes a molecular beam emission slit, a liquid nitrogen cold shield, and a source furnace flange.

[0015] The present invention also relates to a thin film deposition method with simple steps, low cost, convenient and reliable use, which ensures that the gaseous materials or material particles emitted by the material source have high directivity during the thin film deposition process, converts the point source or line source device in various vapor deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy into a surface source, eliminates the shadow effect, improves the uniformity of thin film deposition, and finally improves the product performance. The deposition steps of the thin film deposition method are as follows:

[0016] S1. Each evaporation source emits a material beam through a nozzle. Each material beam is emitted to the corresponding curved reflector, each material beam is reflected to the corresponding planar reflector, and each planar reflector then sprays the corresponding material beam onto the surface of the corresponding beam splitter assembly of the beam splitter. After all the material beams pass through the uppermost beam splitter assembly, the substrate is coated or doped.

[0017] S2. When the material beam propagating in the vertical direction is sprayed onto the surface of the corresponding beam splitter assembly of the beam splitter, part of the material beam (about half) is reflected along the horizontal direction onto the substrate on the wall of the chamber, and part of the material beam (about the other half) continues to propagate after being reflected in the vertical direction.

[0018] S3. When the material beam propagating in the horizontal direction is sprayed onto the surface of the corresponding beam splitter assembly of the beam splitter, the material beam is all reflected to propagate in the vertical direction.

[0019] S4. The material beams propagating in the vertical and horizontal directions become a mixed vertical material beam after being reflected by the beam splitter and enter the uppermost beam splitter assembly.

[0020] After the material beams emitted from different evaporation sources pass through the beam splitter assembly at the uppermost part, they coat or dope the substrate at the same small angle, and the deposition is completed after coating or doping.

[0021] Adopting the technical solution of the present invention, the working principle and beneficial effects are as follows:

[0022] The thin film deposition device and its deposition method of the present invention include components such as a plurality of reflectors and beam splitters, and can uniformly mix and shape the material beams emitted from one or more vapor-phase material point sources or line sources into a surface source. This device can prepare thin films or epitaxial devices with high uniformity and small shadow effects, improve the thin film quality, and reduce the effective size of the fine structure of the device. When performing the deposition process, each evaporation source 20 emits a material beam 70 through the nozzle 21, each material beam is emitted to the corresponding curved reflector 30, each material beam 70 is reflected to the corresponding planar reflector, and each planar reflector 40 then sprays the corresponding material beam 70 onto the surface of the corresponding beam splitter assembly 52 of the beam splitter. All the material beams 70 coat or dope the substrate 11 after passing through the beam splitter assembly at the uppermost part; when the material beam propagating in the vertical direction is sprayed on the surface of the corresponding beam splitter assembly 52 of the beam splitter 50, part of the material beam 70 (about half) is reflected along the horizontal direction onto the substrate on the wall of the wall body, and part of the material beam 70 (about the other half) continues to propagate after being reflected in the vertical direction; when the material beam propagating in the horizontal direction is sprayed on the surface of the corresponding beam splitter assembly of the beam splitter, the material beam is all reflected to propagate in the vertical direction; the material beams propagating in the vertical and horizontal directions become mixed vertical material beams after being reflected by the beam splitter and enter the beam splitter assembly at the uppermost part; after the material beams emitted from different evaporation sources pass through the beam splitter assembly at the uppermost part, they coat or dope the substrate at the same small angle, and the deposition is completed after coating or doping. Description of the Drawings

[0023] The following briefly describes the content expressed by each drawing in this specification and the marks in the drawings:

[0024] Figure 1A It is a schematic side view structure diagram of the thin film deposition device of the present invention;

[0025] Figure 1B It is a schematic top view structure diagram of a point source deposition device (coating device);

[0026] Figure 1C It is a 45° obliquely downward perspective schematic diagram of a line source deposition device (coating device);

[0027] Figure 1D It is a schematic side view structure diagram of a molecular beam epitaxy deposition device (coating device);

[0028] Figure 2A It is a schematic diagram of the planar reflector structure;

[0029] Figure 2B Schematic diagram of the curved surface reflector structure

[0030] Figure 3A Schematic side view structure of the beam splitter (point source beam splitter)

[0031] Figure 3B Schematic top view structure of the point source beam splitter

[0032] Figure 4A Schematic diagram of the principle of the beam splitter reflecting the material beam in the horizontal direction (transverse direction)

[0033] Figure 4B Schematic diagram of the principle of the beam splitter reflecting the material beam in the vertical direction (longitudinal direction)

[0034] Figure 4C Schematic diagram of the working principle of the thin film deposition device

[0035] Figure 5 Schematic diagram of the optional cross-sectional shape of the beam splitter assembly (reflector) of the beam splitter

[0036] The labels in the attached drawings are respectively: 10, coating chamber wall; 11, substrate; 12, mask; 13, heating component; 14, reflective surface; 20, evaporation source; 30, curved surface reflector; 40, planar reflector; 50, beam splitter; 60, molecular beam epitaxy coating device; 61, molecular beam emission slit; 62, liquid nitrogen cold shield; 63, source furnace flange; 70, material beam. Detailed implementation manners

[0037] The following further details the specific implementation manners of the present invention, such as the shapes, structures of the various components involved, the mutual positions and connection relationships between the various parts, the functions and working principles of the various parts, etc., by describing the embodiments with reference to the attached drawings:

[0038] As shown in the attached Figure 1A - attached Figure 5As shown in the figure, the present invention is a thin film deposition device. Multiple evaporation sources 20 are arranged at the lower part of the coating chamber wall 10. Corresponding curved reflectors 30 are arranged at the positions of each evaporation source 20. A plane reflector 40 is also arranged at the lower part of the coating chamber wall 10. A beam splitter 50 is arranged in the middle of the coating chamber wall 10. The beam splitter 50 includes multiple beam splitter components 52. Each beam splitter component 52 is arranged in a structure with an acute angle with the horizontal direction. A plane reflector 40 is also arranged on the side of the beam splitter 50. The plane reflector 40 is arranged in a structure with an acute angle with the horizontal direction. Heating components 13 are respectively arranged in the plane reflector 40, the curved reflector 30, and the beam splitter component 52. The above structure proposes an improved technical solution for the deficiencies in the prior art. The entire deposition device includes multiple components such as reflectors and beam splitters, which can uniformly mix and shape the material beams emitted from one or more gas-phase material point sources or line sources into a surface source. This device can fabricate thin films or epitaxial devices with high uniformity and small shadow effects, improve the quality of the thin films, and reduce the effective size of the fine structure of the device. During the deposition process, each evaporation source 20 emits a material beam 70 through a nozzle 21. Each material beam 70 is emitted to the corresponding curved reflector 30. Each material beam 70 is reflected to the corresponding plane reflector 40. Each plane reflector 40 then sprays the corresponding material beam 70 onto the surface of the corresponding beam splitter component 52 of the beam splitter 50. After all the material beams 70 pass through the uppermost beam splitter component 52, the substrate 11 is coated or doped; when the material beam 70 propagating in the vertical direction is sprayed onto the surface of the corresponding beam splitter component 52 of the beam splitter 50, part of the material beam 70 (about half) is reflected along the horizontal direction onto the substrate on the wall of the chamber, and part of the material beam 70 (about the other half) continues to propagate after being reflected in the vertical direction; when the material beam 70 propagating in the horizontal direction is sprayed onto the surface of the corresponding beam splitter component 52 of the beam splitter 50, the material beam 70 is all reflected to propagate in the vertical direction; the material beams 70 propagating in the vertical and horizontal directions become mixed vertical material beams after being reflected by the beam splitter 50 and enter the uppermost beam splitter component 52; the material beams 70 emitted from different evaporation sources 20 coat or dope the substrate 11 at the same small angle after passing through the uppermost beam splitter component 52, and the deposition is completed after coating or doping. The thin film deposition device and its deposition method of the present invention have low cost and are convenient to use, ensuring that the gas-phase materials or material particles emitted from the material source have high directivity during the thin film deposition process, converting the point source or line source devices in various gas-phase deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy into surface sources, eliminating the shadow effect, improving the deposition uniformity, and improving the product performance.

[0039] On the upper part of the coated cavity wall 10, a substrate 11 and a mask plate 12 are arranged from top to bottom. The substrate 11 is a silicon wafer. The diameter of the mask plate 12 is larger than that of the substrate 11. In the above structure, during deposition, the entire deposition work is carried out based on the coated cavity wall 10. A substrate and a mask plate are arranged above the inside of the coated cavity wall 10, and the material beam below coats from top to bottom to complete the operation. If the deposited thin film needs to have a specific patterned structure, a mask plate 12 with a specific pattern needs to be arranged on the thin film deposition side of the substrate 11, so that the area of the substrate 11 blocked by the mask plate 12 cannot be deposited, while the area where the mask plate 12 is hollowed out can be deposited, thus forming a pattern; if the deposited thin film has no patterning requirements, the mask plate can be removed.

[0040] A plurality of beam splitter components 52 of the beam splitter 50 are arranged from top to bottom, and an acute angle structure is formed between two adjacent beam splitter components 52. Each evaporation source 20 includes a nozzle 21 respectively. The nozzle 21 of each evaporation source 20 is aligned with a curved reflector 30, and each curved reflector 30 corresponds to a plane reflector 40. A plane reflector 40 corresponding to each curved reflector 30 is parallel to a corresponding beam splitter component 52. Each beam splitter component 52 of the beam splitter 50 is a quadrangular prism structure, and the angle of each beam splitter component 52 relative to the horizontal direction is less than 30°. In the above structure, when the material in the material evaporation source is heated to the evaporation temperature, it will continuously be ejected from the nozzle at a specific rate in a gaseous state or in the form of nano-scale particles at various angles onto the inner surface of the corresponding curved reflector. After being reflected by the parabolic surface of the curved reflector, it becomes an approximately planar material beam and is ejected onto the surface of the plane reflector, and then is redirected by the plane reflector and ejected onto the beam splitter surface. Finally, the material beams 70 emitted by different evaporation sources 20 are used to coat or dope the substrate 11 at the same small angle after passing through the uppermost beam splitter component 52, and the deposition is completed after coating or doping.

[0041] The heating component 13 is a resistance wire. In the above structure, the electric heating wire is used for heating, so that the curved reflector, the plane reflector, and the beam splitter are all high-temperature structures, which is beneficial to the reflection of the material beam.

[0042] The surfaces of the curved reflector 30 and the straight reflector 40 are single-crystalline silicon (100) surfaces, and the surface roughness is less than 0.5 nm. The shape of the plane reflector 40 is rectangular, the shape of the curved reflector 30 is a trough-shaped paraboloid, and the beam splitter 50 is composed of a plurality of quadrangular prism-shaped beam splitter components 52 arranged. The thin film deposition device further includes a molecular beam epitaxy coating device 60, and the molecular beam epitaxy coating device 60 includes a molecular beam emission slit 61, a liquid nitrogen cold shield 62, and a source furnace flange 63.

[0043] The present invention also relates to a thin film deposition method which has simple steps, low cost, is convenient and reliable to use, ensures that the gaseous materials or material particles emitted from the material source have high directivity during the thin film deposition process, converts the point source or line source device in various vapor deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy into a surface source, eliminates the shadow effect, improves the uniformity of thin film deposition, and ultimately improves the product performance. The deposition steps of the thin film deposition method are as follows:

[0044] S1. Each evaporation source 20 emits a material beam 70 through a nozzle 21. Each material beam 70 is emitted to a corresponding curved reflector 30, and each material beam 70 is reflected to a corresponding planar reflector 40. Each planar reflector 40 then sprays the corresponding material beam 70 onto the surface of the corresponding beam splitter assembly 52 of the beam splitter 50. After all the material beams 70 pass through the uppermost beam splitter assembly 52, the substrate 11 is coated or doped.

[0045] S2. When the material beam 70 propagating in the vertical direction is sprayed onto the surface of the corresponding beam splitter assembly 52 of the beam splitter 50, part of the material beam 70 (about half) is reflected along the horizontal direction onto the substrate on the wall of the chamber, and part of the material beam 70 (about the other half) continues to propagate after being reflected in the vertical direction.

[0046] S3. When the material beam 70 propagating in the horizontal direction is sprayed onto the surface of the corresponding beam splitter assembly 52 of the beam splitter 50, the material beam 70 is all reflected to propagate in the vertical direction.

[0047] S4. The material beams 70 propagating in the vertical and horizontal directions become mixed vertical material beams after being reflected by the beam splitter 50 and enter the uppermost beam splitter assembly 52.

[0048] S5. The material beams 70 emitted from different evaporation sources 20 perform coating or doping on the substrate 11 at the same small angle after passing through the uppermost beam splitter assembly 52, and the deposition is completed after coating or doping.

[0049] The technical problems, technical solutions, and technical effects of the present invention are further described as follows:

[0050] The technical problem addressed by the present invention is:

[0051] In thin film vacuum vapor deposition technologies such as vacuum thermal evaporation and molecular beam epitaxy, the material sources used are generally point sources or line sources. The incident angles of the material beams emitted by them during deposition on the substrate are generally not zero, and the incident angles at different positions on the substrate are generally different. This results in poor uniformity of the deposited thin film, and the effective size of the fine structure of the thin film device is also large due to the shadow effect. In the above technologies, it is difficult to uniformly mix the materials emitted from different material sources.

[0052] The technical solution of the present invention to solve the technical problem is:

[0053] An evaporation source with a heating component, a curved reflector, a planar reflector, and a beam splitter are provided. The material beams emitted from different dot-shaped material sources or linear material sources are shaped into approximately parallel material beams by the curved reflector; then, they are emitted to a series of longitudinally arranged beam splitters through the planar reflector to change the path, and are mixed with the material beams emitted from the previous-stage beam splitter, and jointly enter the next-stage beam splitter in the longitudinal direction; finally, these material beams are mixed together and incident on the mask plate and the substrate at an approximately zero angle to form a device with a uniform and high-precision pattern.

[0054] The nozzle of the evaporation source is a material beam shaping device. One end of it is connected to the outlet of the evaporation source (material source) to collect the material beam emitted from the material source; the material beam is reflected or secondarily evaporated by the inner wall of the channel with a heating component provided on the evaporation source, and enters the vacuum chamber formed by the coating chamber wall 10 at various angles from the narrow outlet.

[0055] The curved reflector is a device with a heating device and a continuous smooth curved surface. Its function is to shape the material beam emitted from the upper nozzle into an approximately planar material beam through reflection. The surface shape of the curved reflector can be a curved surface formed by rotating, translating, etc. various curves such as circular arcs, elliptical arcs, parabolas, and cubic curves. Preferably, the curved reflector used for the point source is a paraboloid reflector of revolution, and the curved reflector used for the line source is a trough-shaped paraboloid reflector.

[0056] The planar reflector is a device with a heating device and a continuous smooth planar surface. When the surface curvature of the curved reflector is relatively low, it can be considered a planar reflector. Its function is to change the propagation direction of the material beam, and can reflect the material beams emitted from different material sources to different beam splitters arranged in the same longitudinal direction.

[0057] The beam splitter is a device with a heating device and a discontinuous smooth surface, and its structure is composed of a combination of multiple reflectors with multi-directional reflecting surfaces. When the material beams incident from different directions hit different surfaces of the beam splitter, they are reflected or secondarily evaporated by the discontinuous surface of the beam splitter and finally emitted in the same direction. In order to deposit multiple different materials on the substrate or deposit multiple different materials simultaneously, usually multiple beam splitters are arranged on one side of the thin film deposited on the substrate and perpendicular to the substrate. Here, the direction perpendicular to the substrate is defined as the longitudinal direction, and the direction parallel to the substrate is defined as the transverse direction.

[0058] The surface materials of the reflecting surfaces of the curved reflector, the planar reflector, and the beam splitter are one or several composite materials of metals, inorganic non-metallic materials, and polymers. Preferably, the surface materials of the reflecting surfaces of the reflector and the beam splitter are stainless steel, Al2O3, single-crystalline silicon, diamond coating, etc.

[0059] The evaporation temperature of the material bundle material i is set to Ct(i), and the surface adsorption energy of the material bundle material i on the surface of the reflector surface material j at absolute zero is set to E ab (i, j).

[0060] The heating component (heating source) is generally an electric heating wire. When its heating temperature is greater than Ct(i) + E ab (i, j) / k B When this occurs, the material bundle i mainly reflects on the surface j of the reflector or beam splitter reflector surface; when the temperature is lower than this but greater than Ct(i), the material bundle i reflects and undergoes secondary evaporation on the surface j of the reflector or beam splitter reflector surface; when the temperature is lower than Ct(i), the deposition of material i mainly occurs. Where k B is the Boltzmann constant.

[0061] The incident angle of the material bundle shaped by the reflector and beam splitter on the substrate depends on the materials, roughness, temperature, curved surface shape of the reflector and beam splitter surfaces, and the size of the material bundle nozzle outlet. The smaller the surface roughness of the reflector and beam splitter, the higher the temperature, the greater the curvature, and the smaller (point source) or narrower (line source) the nozzle outlet, the smaller the incident angle. Figure 5 Some schematic cross-sectional shapes of the beam splitter reflector are shown in

[0062] The technical effect of the present invention: A coating film with high uniformity and high-precision structure can be obtained.

[0063] To further understand the purpose, structure, characteristics, and functions of the present invention, the following is a detailed description in conjunction with embodiments:[[]]END]]

[0064] Regarding the thin film deposition device (point source vacuum thermal evaporation coating device):

[0065] Figure 1A and Figure 1B are respectively the side view and top view in the schematic structural diagram of the point source vacuum thermal evaporation coating device. In the figure, 10 is the coating chamber wall, 11 is the coating substrate, 12 is the coating mask plate, 13 is the heating device, 14 is the reflecting surface, 20 is the evaporation source, 21 is the nozzle, 30 is the curved reflector, 40 is the plane reflector, and 50 is the beam splitter. The structures of the 30 curved reflector, 40 plane reflector, and 50 beam splitter are as shown in Figure 2A 、 2B 、3A and 3B.

[0066] The coating substrate 11 is a silicon wafer with a diameter of 300mm; the diameter of the mask plate 12 is 320mm, the thickness of the mask plate 12 is 5μm, and the pattern opening size of the mask plate 12 is 5μm; all reflector surfaces are single crystal silicon <100> The surface roughness is less than 0.5nm; the heating component is a resistance wire, and the temperature of the resistance wire needs to be adjusted according to the evaporation temperature and evaporation rate of different materials and the reflection angle of the reflector; the projection of the curved reflector, flat reflector and beam splitter in the horizontal or vertical direction is 330mm; each reflector in the beam splitter is a square prism with a side length of 1mm, and the beam splitter is installed at an elevation angle of 26.5° relative to the horizontal direction.

[0067] Figure 1A In the process, if the thin film to be deposited is required to have a specific patterned structure, a mask with a specific pattern needs to be installed on the side of the substrate where the thin film is to be deposited, so that the thin film cannot be deposited in the area of the substrate blocked by the mask, and the thin film can be deposited in the area hollowed out by the mask; if the deposited thin film has no patterning requirements, the mask can be removed.

[0068] Figure 1A The dashed line in the middle represents the propagation path of the material beam through the reflector and beam splitter. When the material in the evaporation source is heated to its evaporation temperature, it is continuously ejected from the nozzle at a specific rate in the form of gas or nanoparticles onto the inner surface of the parabolic reflector at various angles. Reflected by the high-temperature parabola, it becomes a nearly planar material beam and is ejected onto the surface of the planar reflector. The planar reflector then redirects the beam and ejects it onto the beam splitter.

[0069] Figure 3A 、 3B is a schematic diagram of the structure of the beam splitter. Figure 3A A side view of the beam splitter when installed at a specific angle in the device. Figure 3A 51 is the beam splitter frame, 52 is the beam splitter assembly (beam splitter reflector), 13 is the heating component (heating device), and 14 is the reflecting surface. Figure 3B Schematic diagram of the beam splitter structure from a top view.

[0070] When the longitudinally propagating material beam is ejected onto the beam splitter surface, about half of the material beam will be reflected laterally onto the substrate of the wall, and the other half of the material beam will continue to propagate longitudinally after two reflections, such as Figure 4B As shown; when the transversely propagating material beam is ejected on the beam splitter surface, it will be completely reflected and propagated in the longitudinal direction, as shown Figure 4A As shown; at this point, the transverse and longitudinal propagation beams are reflected by the beam splitter to become mixed longitudinal beams, and enter the next level beam splitter, as shown Figure 4C shown.

[0071] Figure 1CSchematic diagram (45° downward oblique perspective view) of a line-source coating device (deposition device). Its working principle is the same as that of a point-source vacuum thermal evaporation coating device, except for the shapes of the reflector and the beam splitter. Among them, the shape of the planar reflector is rectangular, the shape of the curved reflector is a trough-shaped paraboloid, and the beam splitter is a rectangular device composed of a prism arrangement with the same length.

[0072] Regarding the molecular beam epitaxy coating device:

[0073] A schematic structural diagram (side view) of the molecular beam epitaxy coating device is as Figure 1D shown. Among them, 61 is the molecular beam emission slit, 62 is the liquid nitrogen cold shield, and 63 is the source furnace flange. The material beam emitted from the flange passes through the emission slit and then enters the substrate and the mask plate at almost the same angle.

[0074] Through the reflection and mixing of the 40 planar reflector and the 50 beam splitter, the molecular beams emitted from different material sources coat or dope the substrate at the same small angle, completing the coating of the substrate.

[0075] The thin film deposition device and its deposition method described in the present invention include components such as multiple reflectors and beam splitters, which can uniformly mix and shape the material beams emitted from one or more gas-phase material point sources or line sources into a surface source. This device can fabricate thin films or epitaxial devices with high uniformity and small shadow effects, improve the quality of the thin films, and reduce the effective size of the fine structure of the devices. During the deposition process, each evaporation source 20 emits a material beam 70 through the nozzle 21, each material beam 70 is emitted to the corresponding curved reflector 30, each material beam 70 is reflected to the corresponding planar reflector 40, and each planar reflector 40 then sprays the corresponding material beam 70 onto the surface of the corresponding beam splitter component 52 of the beam splitter 50. After all the material beams 70 pass through the uppermost beam splitter component 52, they coat or dope the substrate 11; when the material beam 70 propagating in the vertical direction is sprayed onto the surface of the corresponding beam splitter component 52 of the beam splitter 50, part of the material beam 70 (about half) is reflected along the horizontal direction onto the substrate on the wall of the wall, and part of the material beam 70 (about the other half) continues to propagate after being reflected in the vertical direction; when the material beam 70 propagating in the horizontal direction is sprayed onto the surface of the corresponding beam splitter component 52 of the beam splitter 50, the material beam 70 is all reflected to propagate in the vertical direction; the material beams 70 propagating in the vertical and horizontal directions become mixed vertical material beams after being reflected by the beam splitter 50 and enter the uppermost beam splitter component 52; the material beams 70 emitted from different evaporation sources 20 coat or dope the substrate 11 at the same small angle after passing through the uppermost beam splitter component 52, and then the deposition is completed.

[0076] The present invention has been described exemplarily in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above-mentioned manner. As long as various improvements are made by adopting the method concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the protection scope of the present invention.

Claims

1. A thin film deposition apparatus, characterized in that: A plurality of evaporation sources (20) are provided at the lower part of the coating chamber wall (10), corresponding curved reflectors (30) are respectively arranged at the positions of each evaporation source (20), a planar reflector (40) is further provided at the lower part of the coating chamber wall (10), a beam splitter (50) is provided in the middle of the coating chamber wall (10), the beam splitter (50) includes a plurality of beam splitter components (52), and a planar reflector (40) is further provided on the side of the beam splitter (50). The planar reflector (40) is arranged in a structure with an acute angle with the horizontal direction. Heating components (13) are respectively arranged in the planar reflector (40), the curved reflector (30), and the beam splitter component (52); The multiple beam splitter components (52) of the beam splitter (50) are arranged from top to bottom, and an acute angle structure is formed between two adjacent beam splitter components (52); Each evaporation source (20) respectively includes a nozzle (21), the nozzle (21) of each evaporation source (20) is aligned with a curved reflector (30), and each curved reflector (30) corresponds to a planar reflector (40); One planar reflector (40) corresponding to each curved reflector (30) is parallel to one corresponding beam splitter component (52). Each beam splitter component (52) of the beam splitter (50) is a quadrangular prism structure, and the angle of each beam splitter component (52) relative to the horizontal direction is less than 30°.

2. The thin film deposition apparatus according to claim 1, wherein: A substrate (11) and a mask plate (12) are arranged from top to bottom at the upper part of the coating chamber wall (10). The substrate (11) is a silicon wafer; the diameter of the mask plate (12) is larger than the diameter of the substrate (11).

3. The thin film deposition apparatus according to claim 1 or 2, wherein: The shape of the planar reflector (40) is rectangular, and the shape of the curved reflector (30) is a trough-shaped paraboloid.

4. The thin film deposition apparatus according to claim 1 or 2, characterized in that: The heating component (13) is a resistance wire.

5. The thin film deposition apparatus according to claim 3, characterized in that: The surfaces of the curved reflector (30) and the straight reflector (40) are single crystal silicon (100) surfaces, and the surface roughness is less than 0.5 nm; the beam splitter (50) is composed of an arrangement of multiple quadrangular prism-shaped beam splitter components (52).

6. The thin film deposition apparatus according to claim 1 or 2, characterized in that: The thin film deposition device further includes a molecular beam epitaxy coating device (60), and the molecular beam epitaxy coating device (60) includes a molecular beam emission slit (61), a liquid nitrogen cold screen (62), and a source furnace flange (63).

7. The thin film deposition method of the thin film deposition apparatus according to claim 1, characterized in that: The deposition steps of the thin film deposition method are as follows: S1. Each evaporation source (20) emits a material beam (70) through the nozzle (21). Each material beam (70) is emitted to the corresponding curved reflector (30), each material beam (70) is reflected to the corresponding planar reflector (40), and each planar reflector (40) then sprays the corresponding material beam (70) onto the surface of the corresponding beam splitter component (52) of the beam splitter (50). After all the material beams (70) pass through the uppermost beam splitter component (52), the substrate (11) is coated or doped; S2. When the material beam (70) propagating in the vertical direction is sprayed on the surface of the corresponding beam splitter component (52) of the beam splitter (50), part of the material beam (70) is reflected along the horizontal direction onto the substrate on the wall of the chamber, and part of the material beam (70) continues to propagate after being reflected in the vertical direction; S3. When the material beam (70) propagating in the horizontal direction impinges on the surface of the corresponding beam splitter component (52) of the beam splitter (50), the material beam (70) is totally reflected to propagate in the vertical direction; S4. The material beams (70) propagating in the vertical and horizontal directions become a mixed vertical material beam after being reflected by the beam splitter (50) and enter the uppermost beam splitter component (52); S5. The material beams (70) emitted from different evaporation sources (20) are used to coat or dope the substrate (11) at the same small angle after passing through the uppermost beam splitter component (52), and the deposition is completed after coating or doping.

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