A high-power microwave source cooling system and a preparation method thereof

Abstract

The application discloses a high-power microwave source high-efficiency cooling system and a preparation method thereof. The system mainly comprises a power device integrated unit, a high-efficiency cooling path and a power source substrate unit. The power device integrated unit realizes multi-group microwave power device array integration and function circuit integration. The high-efficiency cooling path realizes multi-stage high-efficiency cooling capacity of the high-power microwave source. The power source substrate unit realizes support of the microwave source system. The low-thermal-resistance power device with the embedded micro-flow heat dissipation, the display shunt low-flow-resistance heat dissipation structure design are adopted, the heat accumulation problem in the high-power device integration process is effectively solved, and high-efficiency integration and high power function of the high-power microwave source are realized.

Description

Technical Field

[0001] This invention belongs to the field of research and development of solid-state high-power microwave source systems ranging from kilowatts to 10,000 watts, and in particular, a high-power microwave source cooling system and its preparation method. Background Technology

[0002] Solid-state power source systems, represented by LDMOS-level GaN power devices, are evolving towards higher power, higher reliability, and miniaturization. The required power devices must meet high power or multi-device integration requirements, especially now moving towards the tens of kilowatts level. This leads to increasingly severe thermal effects in power devices, making it difficult to meet the high power and high reliability requirements of solid-state high-power microwave source systems. Currently, the high power of solid-state power sources heavily relies on their heat dissipation technology, and thermal management technology has become one of the major technical bottlenecks restricting the development and application of high-power microwave sources. Currently, high-power sources suffer from poor heat dissipation capabilities, large size, low integration, and low reliability. Therefore, solving the heat dissipation problem of miniaturized, high-power microwave source systems has become a hot and key research topic in this field. Summary of the Invention

[0003] The purpose of this invention is to provide a high-power microwave source cooling system and its preparation method.

[0004] The technical solution to achieve the purpose of the present invention is as follows: In the first aspect, the present invention provides a high-power microwave source cooling system, including a power device integration unit, a cooling path unit, and a power source substrate unit. The three units are integrated into an integral power source system through machining, gold-tin soldering, and laser soldering. The power device integration unit consists of microwave power devices with an array-type embedded microfluidic heat dissipation structure and a copper support plate, realizing the integration of multiple microwave power device arrays and functional circuits. The cooling path unit consists of an inlet / outlet liquid zone, a liquid distribution zone, and an array of cooling channels, enabling multi-stage, high-efficiency cooling of a high-power microwave source. The power source substrate unit is made of aluminum and contains liquid inlet and outlet areas and liquid distribution areas. It is integrated with a copper support plate by gold-tin soldering and laser welding to form an array-type cooling channel. The cooling channel is inside the power source substrate unit, and the copper support plate is embedded in the power source substrate unit. The upper surfaces are the same plane to realize the support of the microwave source system.

[0005] Secondly, the present invention provides a method for preparing a high-power microwave source cooling system, comprising: Fabrication of power device integrated units: Laser processing is used to fabricate microchannels embedded in microwave power devices and liquid inlet and outlet ports of microchannels embedded in copper support thin plates; Cooling path unit fabrication: The inlet and outlet liquid zones, the liquid distribution zone, and the array-type cooling channels are formed by mechanical processing or laser processing; the array-type cooling channels are directly interconnected with the inlet and outlet of the copper support plate by gold-tin soldering. Power source substrate unit fabrication: Lightweight aluminum-based material is used to form liquid outlet end and support end through mechanical processing or laser processing; the support end and copper support plate are bonded with gold and tin to form an array of cooling channels. At the same time, the copper support plate is embedded in the power source substrate unit and integrated by laser welding to finally realize the support of the microwave source system. The power device integration unit, cooling path unit, and power source substrate unit are integrated into a whole power source system through machining, gold-tin soldering, and laser soldering.

[0006] Compared with the prior art, the significant advantages of the present invention are: the present invention adopts the technical advantages of low thermal resistance power devices with embedded microfluidic heat dissipation, arrayed shunt low flow resistance heat dissipation structure design, and copper-aluminum material integration scheme, which effectively solves the problem of heat accumulation in the integration process of high power devices, realizes the efficient integration and high power function of high power microwave source, and at the same time ensures the lightweight, miniaturization and high reliability of high power microwave source. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of the design and fabrication method of a high-power microwave source cooling system according to the present invention. Detailed Implementation

[0008] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0009] Combination Figure 1 A high-power microwave source cooling system mainly comprises a power device integration unit B, a cooling path unit C, and a power source substrate unit A. These three units are integrated into a single power source system through machining, soldering, and laser bonding. The power device integration unit B integrates multiple microwave power devices (B1) in an array and functional circuits. The cooling path unit C provides multi-stage, high-efficiency cooling for the high-power microwave source. The power source substrate unit A provides support for the microwave source system. This invention employs an embedded microfluidic heat dissipation microwave power device B1 and a shunt-type, low-flow-resistance array-type cooling channel C3 design, effectively solving the heat accumulation problem during the integration of high-power devices and achieving efficient integration and high-power functionality of the high-power microwave source.

[0010] Combination Figure 1The power device integration unit B consists of microwave power devices B1 with an array-type embedded microfluidic heat dissipation structure and a copper support plate B2. It realizes the array integration of multiple microwave power devices B1 and the integration of functional circuits to meet the high power characteristics. Each microwave power device B1 contains an embedded microfluidic channel, and the copper support plate B2 contains the liquid inlet and outlet of the embedded microfluidic channel. The diameter of its liquid inlet and outlet is the same as the diameter of the liquid inlet and outlet of the corresponding microwave power device B1 embedded microfluidic channel. The thickness of the copper support plate B2 is 3-10mm. Copper material is used for better heat dissipation. If the thickness is too thin, it is prone to deformation. If the thickness is too thick, it will increase the total amount.

[0011] Combination Figure 1 The cooling path unit C consists of an inlet / outlet liquid zone C1, a liquid distribution zone C2, and an array-type cooling channel C3, realizing multi-stage high-efficiency cooling capability for high-power microwave sources. The liquid distribution zone can distribute the flow of 2-20 array-type cooling channels. The array-type cooling channels C3 are in parallel structure, which can effectively reduce flow resistance. Each cooling channel C3 is directly connected to the inlet and outlet of the copper support plate B2. The diameter of the cooling channel C3 is defined according to the diameter of the embedded microchannel of the low thermal resistance power device, which is 1.0-1.5 times the diameter of the embedded microchannel of the microwave power device. Each cooling channel is connected in series with two microwave power devices with embedded microfluidic heat dissipation structures to prevent excessive flow resistance and excessive fluid temperature from affecting the heat dissipation effect.

[0012] Combination Figure 1 The power source substrate unit A is made of aluminum with a thickness of 20-40 mm, which can ensure the lightweight and support strength of the microwave source. It consists of a liquid outlet A1 and a support end A2. The liquid outlet A1 contains an inlet / outlet liquid area C1, and the support end A2 contains a liquid distribution area C2. It is integrated with the copper support plate B1 by gold-tin soldering and laser welding to form an array-type cooling channel C3. The cooling channel C3 is inside the power source substrate unit. The copper support plate B1 is embedded in the power source substrate unit A, and the upper surfaces are on the same plane to realize the support of the microwave source system.

[0013] Based on the same inventive concept, the present invention also provides a method for preparing a high-power microwave source cooling system, comprising: Fabrication of power device integration unit: Laser processing is used to fabricate the microchannel embedded in the microwave power device and the liquid inlet and outlet of the microchannel embedded in the copper support plate; the copper support plate and the low thermal resistance power device are integrated with conductive adhesive and mechanical screws; the peripheral matching functional circuits are integrated with mechanical screws.

[0014] Cooling path unit fabrication: The inlet and outlet liquid zones, the liquid distribution zone, and the array-type cooling channels are formed by mechanical processing or laser processing; the array-type cooling channels are directly interconnected with the inlet and outlet of the copper support plate by gold-tin soldering.

[0015] Power source substrate unit fabrication: Lightweight aluminum-based material is used to form liquid outlet end and support end through mechanical processing or laser processing. The support end and copper support plate are bonded with gold and tin to form an array of cooling channels. At the same time, the copper support plate is embedded in the power source substrate unit and laser welding is used to further integrate and improve reliability, ultimately realizing the support of the microwave source system.

[0016] The power device integration unit, cooling path unit, and power source substrate unit are integrated into a whole power source system through machining, gold-tin soldering, and laser soldering.

[0017] This invention can effectively solve the heat dissipation problem of solid-state power sources represented by the above-mentioned LDMOS-level GaN power devices, thereby ensuring that the power source can achieve advantages such as miniaturization and high reliability while achieving high power; it effectively ensures that solid-state power microwave source systems develop towards high power, miniaturization and high reliability, and further promotes the application of solid-state high-power microwave sources.

[0018] The present invention will now be described in detail with reference to the embodiments. Example

[0019] A design and fabrication method for a high-power microwave source cooling system, specifically including: Design and fabrication of power device integration unit: 20 array-type low thermal resistance power devices with embedded microfluidic heat dissipation structure were designed and integrated with copper support plate using conductive adhesive and mechanical screws to ensure precise integration of liquid inlet and outlet of copper support plate with embedded microfluidic channels of low thermal resistance power devices; the thickness of copper support plate is designed to be 5 mm, and the surrounding matching functional circuits are integrated using mechanical screws to ensure normal operation of low thermal resistance power devices.

[0020] Cooling path unit design and fabrication: The cooling path unit is designed and fabricated using machining and laser welding. It includes an inlet zone, a distribution zone, and 10 array-type cooling channels. The array-type cooling channels are in parallel structure. Each cooling channel is directly interconnected with the inlet and outlet of the copper support plate by gold-tin soldering. Each cooling channel is 1.2 times the diameter of the embedded microchannel of the low thermal resistance power device. Each cooling channel is connected in series with two low thermal resistance power devices with embedded microfluidic heat dissipation structures.

[0021] Power source substrate unit design and fabrication: Aluminum material is used with a thickness of 30 mm to ensure the lightweight and support strength of the microwave source. The liquid outlet is designed and machined with inlet and outlet liquid areas. The support end is designed and machined with liquid distribution area and array-type cooling channels. It is formed with copper support plate by gold-tin soldering to form array-type cooling channels. At the same time, the copper support plate is embedded in the power source substrate unit with the same upper surface. Laser welding is used to further integrate and improve reliability, and finally realize the support of the microwave source system.

[0022] The implementation methods and examples are specific support for the design and preparation method of a high-power microwave source cooling system proposed in this invention, and should not be used to limit the scope of protection of this invention. Any equivalent changes or modifications made on the basis of this technical solution in accordance with the technical concept proposed in this invention shall still fall within the scope of protection of this invention.

Claims

1. A high-power microwave source cooling system, characterized in that the system includes a power device integration unit, a cooling path unit, and a power source substrate unit, the three units being integrated into an integral power source system through machining, gold-tin soldering, and laser soldering; The power device integration unit consists of microwave power devices with an array-type embedded microfluidic heat dissipation structure and a copper support plate, realizing the integration of multiple microwave power device arrays and functional circuits; each microwave power device contains an embedded microfluidic channel, and the copper support plate contains the liquid inlet and outlet of the embedded microfluidic channel. The diameter of its liquid inlet and outlet is the same as the diameter of the liquid inlet and outlet of the embedded microfluidic channel of the corresponding microwave power device, and the thickness of the copper support plate is 3-10mm. The cooling path unit consists of an inlet / outlet liquid zone, a liquid distribution zone, and an array of cooling channels to achieve multi-stage cooling of the high-power microwave source. The liquid distribution zone distributes the flow of 2-20 arrayed cooling channels, which are connected in parallel. Each cooling channel is directly connected to the inlet and outlet of the copper support plate. The diameter of the cooling channel is 1.0-1.5 times the diameter of the microchannel embedded in the microwave power device. Each cooling channel is connected in series with two microwave power devices with embedded microfluidic heat dissipation structures. The power source substrate unit is made of aluminum and contains liquid inlet / outlet areas and liquid distribution areas. It is integrated with a copper support plate by gold-tin soldering and laser welding to form an array-type cooling channel. The cooling channel is inside the power source substrate unit, and the copper support plate is embedded in the power source substrate unit. The upper surfaces are the same plane, which realizes the support of the microwave source system.

2. A method for preparing a high-power microwave source cooling system as described in claim 1, characterized in that, include: Fabrication of power device integrated units: Laser processing is used to fabricate microchannels embedded in microwave power devices and liquid inlet and outlet ports of microchannels embedded in copper support thin plates; Cooling path unit fabrication: The inlet and outlet liquid zones, the liquid distribution zone, and the array-type cooling channels are formed by mechanical processing or laser processing; the inlet liquid zone, the liquid distribution zone, and 10 array-type cooling channels are designed. The array-type cooling channels are in parallel structure. Each cooling channel is directly interconnected with the inlet and outlet of the copper support plate by gold-tin soldering. Each cooling channel is 1.2 times the diameter of the embedded microchannel in the microwave power device; each cooling channel is connected in series with 2 microwave power devices with embedded microfluidic heat dissipation structures. Power source substrate unit fabrication: Lightweight aluminum-based material is used to form liquid outlet end and support end through mechanical processing or laser processing; the support end and copper support plate are bonded with gold and tin to form an array of cooling channels. At the same time, the copper support plate is embedded in the power source substrate unit and integrated by laser welding to finally realize the support of the microwave source system. The power device integration unit, cooling path unit, and power source substrate unit are integrated into a whole power source system through machining, gold-tin soldering, and laser soldering.

3. The method according to claim 2, characterized in that, The copper support sheet is integrated with the microwave power device using conductive adhesive and mechanical screws.

4. The method according to claim 3, characterized in that, The copper support plate is 5 mm thick, and the surrounding functional circuits are integrated using mechanical screws.

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