Gas injection apparatus, epitaxial apparatus and method of use

Abstract

The application discloses a gas injection device, an epitaxial equipment and a use method. The gas injection device is used for the epitaxial equipment and comprises a flange body, a plurality of gas injection channels and a gas outlet arranged in the flange body. Each gas injection channel comprises a gas inlet connected with a gas source, a gas mixing channel in communication with the gas inlet, a plurality of gas mixing holes arranged in the gas mixing channel for uniformly mixing process gas supplied by the gas source, and a uniform gas channel in communication with the gas mixing channel for uniformly distributing the uniformly mixed process gas. The gas outlet is in communication with the gas injection channel and a reaction cavity of the epitaxial equipment, and is used for conveying the uniformly mixed and distributed process gas into the reaction cavity. The application can convey the uniformly mixed and distributed process gas into the reaction cavity, and make the process gas flow in a laminar flow state when entering the reaction cavity, so as to ensure the yield of wafers.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a gas injection device, an epitaxial equipment and a using method. BACKGROUND

[0002] In the epitaxial process of wafer, a plurality of process gases are injected into a reaction chamber by a gas injection device, so that the process gases react under heating condition to form a deposition film on the wafer surface. Since each process gas generally includes a raw material gas and an oxygen-containing gas, in order to ensure the uniformity of the deposition film on the wafer surface, it is necessary to ensure that each process gas is mixed uniformly, and at the same time, the flow layer distribution of the process gas near the wafer surface is also required to be uniform.

[0003] However, the existing gas injection devices have the problems of poor gas mixing uniformity, non-ideal process gas speed into the reaction chamber, poor flow layer effect, complex preparation and installation, easy to produce process parameter drift and the like. Therefore, it is necessary to adjust and change the gas injection device. SUMMARY

[0004] The purpose of the present application is to provide a gas injection device, an epitaxial equipment and a using method, which can deliver process gases mixed uniformly and distributed uniformly into a reaction chamber, and make the process gases flow in a laminar flow state when entering the reaction chamber, so as to ensure the yield of wafers.

[0005] In order to achieve the above purpose, the present application realizes the following technical scheme:

[0006] A gas injection device for an epitaxial equipment, comprising: a flange body and a plurality of gas injection channels and a gas outlet arranged in the flange body;

[0007] Each of the gas injection channels comprises: a gas inlet connected with a gas source; a gas mixing channel in communication with the gas inlet; a plurality of gas mixing holes arranged in the gas mixing channel for mixing the process gases supplied by the gas source uniformly; and a uniform gas channel in communication with the gas mixing channel for distributing the uniformly mixed process gases uniformly.

[0008] The gas outlet is in communication with the gas injection channels and a reaction chamber of the epitaxial equipment, for delivering the process gases mixed uniformly and distributed uniformly into the reaction chamber.

[0009] Preferably, a plurality of partitions are arranged in the gas outlet to divide the gas outlet into a plurality of gas outlet areas.

[0010] Preferably, the gas mixing channel further comprises:

[0011] an inlet cavity, located between the gas inlet and the mixing holes, and in communication with the gas inlet and all the mixing holes respectively, for expanding the process gas supplied by the gas source to a first preset volume and delivering the process gas to the mixing holes for compression;

[0012] a mixing cavity, located between the mixing holes and the uniformity passage, and in communication with the mixing holes and the uniformity passage respectively, for expanding the process gas compressed by the mixing holes to a second preset volume, so as to mix the process gas supplied by the gas source uniformly.

[0013] Preferably, each of the gas injection passages further comprises an outlet cavity, located between the uniformity passage and the outlet, and in communication with the uniformity passage and the outlet respectively, for making the process gas mixed uniformly and distributed uniformly to enter the outlet at a preset flow rate.

[0014] Preferably, the diameter of the mixing holes is 1mm-3mm, and the height of the mixing holes is 1mm-5mm.

[0015] Preferably, the length of the mixing cavity is the same as the length of the inlet cavity, and the width of the mixing cavity is the same as the width of the inlet cavity and less than 25mm.

[0016] Preferably, the length of the uniformity passage is the same as the length of the mixing cavity, and the width of the uniformity passage is less than 5mm.

[0017] Preferably, the length of the outlet cavity is the same as the length of the uniformity passage, and the width of the outlet cavity is greater than the width of the uniformity passage.

[0018] Preferably, the width of the outlet cavity at the communication with the outlet is adjustable.

[0019] Preferably, the width of the outlet cavity at the communication with the outlet ranges from 1mm to 8mm.

[0020] Preferably, all the gas injection passages are arranged in several rows.

[0021] Preferably, the distance between two adjacent outlet cavities is 0.1mm-5mm.

[0022] Preferably, each kind of process gas is delivered into the reaction cavity through adjacent gas injection passages.

[0023] Preferably, each kind of process gas is a mixed gas of raw gas and oxygen-containing gas.

[0024] In another aspect, the present application further provides an epitaxial device, comprising a reaction cavity and a gas injection device as described above, and the gas injection device is located outside the reaction cavity.

[0025] In another aspect, the present application also provides a method for using the gas injection device as described above, comprising:

[0026] supplying process gas to the gas inlet;

[0027] mixing each process gas uniformly through the gas mixing holes in the corresponding gas mixing channel;

[0028] distributing each uniformly mixed process gas uniformly through the corresponding gas distribution channel; and

[0029] delivering each uniformly mixed and distributed process gas to the reaction chamber of the epitaxial equipment through the gas outlet.

[0030] Preferably, the step of mixing each process gas uniformly through the gas mixing holes in the corresponding gas mixing channel comprises:

[0031] expanding each process gas to a first preset volume in the corresponding gas inlet cavity;

[0032] compressing the process gas expanded to the first preset volume through the corresponding gas mixing holes;

[0033] expanding the compressed process gas to a second preset volume in the corresponding gas mixing cavity to mix each process gas uniformly.

[0034] Compared with the prior art, the present application has at least one of the following advantages:

[0035] The present application provides a gas injection device, an epitaxial equipment and a method for using the same. The flange body of the gas injection device is provided with a plurality of gas injection channels and a gas outlet. Each gas injection channel comprises a gas inlet, a gas mixing channel and a gas distribution channel connected in sequence. Process gas supplied by a gas source can be mixed uniformly through the gas mixing holes in the gas mixing channel after entering the gas mixing channel through the gas inlet. The uniformly mixed process gas can be distributed uniformly through the gas distribution channel. Therefore, the uniformly mixed and distributed process gas can be delivered to the reaction chamber through the gas outlet to perform epitaxial process and ensure the yield of wafers.

[0036] In the present application, the process gas supplied by the gas source will be expanded for the first time when entering the gas inlet cavity from the gas inlet and expanded to a first preset volume. The process gas expanded to the first preset volume will be compressed for the first time when entering the gas mixing hole from the gas inlet cavity. The process gas compressed for the first time will be expanded for the second time when entering the gas mixing cavity from the gas mixing hole and expanded to a second preset volume. The process gas is repeatedly expanded and compressed in the gas mixing channel to achieve sufficient mixing, thereby improving the uniformity of the process gas.

[0037] The uniform gas passage is narrow and high in shape relative to the mixing cavity, so that the mixed uniform process gas is distributed in a narrow and high state after entering the uniform gas passage, thereby making the mixed uniform process gas be distributed more uniformly.

[0038] In the present application, the width of the communication between the outlet cavity and the outlet port is adjusted, so that the flow rate and concentration of the mixed uniform and distributed process gas when delivered to the reaction cavity are controlled, thereby making the process gas delivered to the reaction cavity meet the wafer epitaxy process requirements, and further ensuring the yield of the wafer.

[0039] In the present application, all the gas injection passages are arranged in several rows, so that the process gas can flow in a laminar flow state when entering the reaction cavity through the gas injection passages and the outlet port, thereby meeting the wafer epitaxy process requirements, and further improving the yield of the wafer.

[0040] In the present application, the gas inlet, the gas cavity, the gas mixing hole, the gas mixing cavity, the outlet cavity and the outlet port of the gas injection device are all regular shapes, so that the gas injection device is easy to process and prepare, thereby effectively reducing the production cost. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 is a structural schematic diagram of an epitaxial equipment provided by an embodiment of the present application;

[0042] Figure 2 is a structural schematic diagram of a gas injection device provided by an embodiment of the present application;

[0043] Figure 3 is a longitudinal sectional view of a gas injection device provided by an embodiment of the present application;

[0044] Figure 4 is a transverse sectional view of a gas injection device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0045] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed explanation of the gas injection device, epitaxial device, and method of use proposed in this invention. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clearly illustrate the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes and to enable those skilled in the art to understand and read them, and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0046] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0047] Combined with appendix Figures 1-4 As shown, this embodiment provides a gas injection device for epitaxial equipment, including: a flange body 110 and a plurality of gas injection channels 120 and an outlet 130 disposed within the flange body 110; each gas injection channel 120 includes: an inlet 1210 connected to a gas source; a mixing channel 1220 communicating with the inlet 1210; and the mixing channel 1220 is provided with a plurality of mixing holes 1222 for uniformly mixing the process gas supplied by the gas source; and a uniform gas distribution channel 1230 communicating with the mixing channel 1220 for uniformly distributing the uniformly mixed process gas; the outlet 130 is respectively connected to the gas injection channel 120 and the reaction chamber 200 of the epitaxial equipment for conveying the uniformly mixed and distributed process gas into the reaction chamber 200.

[0048] Specifically, in the embodiment, the gas inlet 1210 is provided with a control valve 1211 at the connection with the corresponding gas source, which is used to regulate the concentration and flow rate of the process gas supplied by the gas source to the gas inlet, so that the process gas delivered to the reaction cavity 200 meets the wafer epitaxy process requirements, thereby ensuring the yield of the wafer, but the present application is not limited thereto.

[0049] Please refer to Figures 2 to 4 , the gas mixing channel 1220 further comprises: a gas inlet cavity 1221 located between the gas inlet 1210 and the gas mixing hole 1222, and respectively communicating with the gas inlet 1210 and all the gas mixing holes 1222, which is used to expand the process gas supplied by the gas source to a first preset volume and deliver it to the gas mixing hole 1222 for compression; a gas mixing cavity 1223 located between the gas mixing hole 1222 and the gas uniformization channel 1230, and respectively communicating with all the gas mixing holes 1222 and the gas uniformization channel 1230, which is used to expand the process gas compressed by the gas mixing hole 1222 to a second preset volume, so that the process gas supplied by the gas source is mixed uniformly.

[0050] Specifically, as shown in Figure 2 , the length of a component in the OA direction can be defined as the length of the component, and the cross section of the component along the AOC plane can be defined as the longitudinal cross section of the component (as shown in Figure 3 ); at the same time, the length of the component in the OB direction can be defined as the width of the component, and the cross section of the component along the BOC plane can be defined as the transverse cross section of the component (as shown in Figure 4 ); and the length of the component in the OC direction can be defined as the height of the component.

[0051] More specifically, in the embodiment, the diameter of the gas mixing hole 1222 is 1mm-3mm, and the height is 1mm-5mm; the length of the gas mixing cavity 1223 is the same as that of the gas inlet cavity 1221; the width of the gas mixing cavity 1223 is the same as that of the gas inlet cavity 1221 and less than 25mm. Preferably, the height of the gas mixing cavity 1223 is less than that of the gas inlet cavity 1221, and the width of the gas mixing cavity 1223 and the gas inlet cavity 1221 is less than 20mm, but the present application is not limited thereto.

[0052] Specifically, in the embodiment, the process gas supplied by the gas source can first enter the corresponding gas inlet cavity 1221 through the gas inlet 1210, and then enter the gas mixing cavity 1223 through the small-sized and large-numbered gas mixing holes 1222. Since the volume of the gas inlet cavity 1221 is larger than the volume at the gas inlet 1210, the process gas supplied by the gas source will expand for the first time when entering the gas inlet cavity 1221 from the gas inlet 1210 and fill the gas inlet cavity 1221, at which time the process gas expands to the first preset volume. Since the volume of each gas mixing hole 1222 is smaller than the volume of the gas inlet cavity 1221, the process gas expanded to the first preset volume will be compressed for the first time when entering the gas mixing hole 1222 from the gas inlet cavity 1221. Since the volume of the gas mixing cavity 1223 is larger than the volume of the gas mixing hole 1222, the process gas compressed for the first time will expand for the second time when entering the gas mixing cavity 1223 from the gas mixing hole 1222 and fill the gas mixing cavity 1223, at which time the process gas expands to the second preset volume. More specifically, the expansion and compression of the gas will cause the distance between the gas molecules to change, thereby causing the distribution of the gas molecules to change. The first expansion, the first compression, and the second expansion that the process gas supplied by the gas source sequentially undergoes during the process of being transported from the gas inlet 1210 to the gas mixing cavity 1223 can make the molecular distribution of the process gas more uniform, i.e., make the mixing of the process gas supplied by the gas source more uniform. Preferably, the first preset volume is the volume of the gas inlet cavity 1221, and the second preset volume is the volume of the gas mixing cavity 1223, but the present application is not limited thereto.

[0053] In addition, in the embodiment, the pore size of the gas mixing hole 1222 needs to ensure that the process gas can pass through smoothly, i.e., ensure that the process gas in the gas inlet cavity 1221 can smoothly pass through the gas mixing hole 1222 and enter the gas mixing cavity 1223. Preferably, the pore size of the gas mixing hole 1222 is 2 mm, and the height is 3 mm, but the present application is not limited thereto.

[0054] Please refer to Figures 2 to 4 , the length of the gas uniformizing channel 1230 is the same as the length of the gas mixing cavity 1223, and the width of the gas uniformizing channel 1230 is less than 5 mm.

[0055] Specifically, in the embodiment, the width of the uniform gas passage 1230 is less than the width of the mixed gas cavity 1223, and the height of the uniform gas passage 1230 is greater than the height of the mixed gas cavity 1223, i.e., the uniform gas passage 1230 is narrow and high relative to the mixed gas cavity 1223. More specifically, the mixed uniform process gas will be compressed again when entering the uniform gas passage 1230 from the mixed gas cavity 1223, and the process gas after the second compression will fill the uniform gas passage 1230. Since the uniform gas passage 1230 is narrow and high, the mixed uniform process gas will be distributed in a narrow and high state in the uniform gas passage 1230, so that the mixed uniform process gas is distributed more uniformly. Preferably, the width of the uniform gas passage 1230 is less than 3 mm, and the volume of the uniform gas passage 1230 is less than the volume of the mixed gas cavity 1223, but the present application is not limited thereto.

[0056] Please refer to Figures 2 to 4 Each of the gas injection passages 120 further comprises an outlet cavity 1240 located between the uniform gas passage 1230 and the outlet 130 and in communication with the uniform gas passage 1230 and the outlet 130, respectively, for allowing the mixed uniform and distributed process gas to enter the outlet 130 at a preset flow rate.

[0057] It can be understood that, in some embodiments, the length of the outlet cavity 1240 is the same as the length of the uniform gas passage 1230, and the width of the outlet cavity 1240 is greater than the width of the uniform gas passage 1230.

[0058] In some embodiments, the width of the outlet cavity 1240 at the communication with the outlet 130 is adjustable to regulate the flow rate of the mixed uniform and distributed process gas entering the outlet 130.

[0059] In some embodiments, the width of the outlet cavity 1240 at the communication with the outlet 130 ranges from 1 mm to 8 mm, i.e., the width of the outlet cavity 1240 at the communication with the outlet 130 can be adjusted to a minimum of 1 mm and a maximum of 8 mm.

[0060] Specifically, in the embodiment, the flow rate and concentration of the process gas delivered to the reaction cavity 200 can be regulated not only by the control valve 1211, but also by adjusting the width of the communication between the outlet cavity 1240 and the outlet port 130. More specifically, when the flow rate of the process gas mixed uniformly and distributed uniformly in the outlet cavity 1240 entering the outlet port 130 is less than the preset flow rate, the width of the communication between the outlet cavity 1240 and the outlet port 130 can be reduced so as to increase the flow rate of the process gas entering the outlet port 130 to the preset flow rate; when the flow rate of the process gas mixed uniformly and distributed uniformly in the outlet cavity 1240 entering the outlet port 130 is greater than the preset flow rate, the width of the communication between the outlet cavity 1240 and the outlet port 130 can be increased so as to reduce the flow rate of the process gas entering the outlet port 130 to the preset flow rate. Preferably, the width of the communication between the outlet cavity 1240 and the outlet port 130 ranges from 1 mm to 5 mm, but the present application is not limited thereto.

[0061] In addition, unlike the embodiment, in some examples, each of the gas injection channels 120 can also not be provided with the outlet cavity 1240, at which time the outlet port 130 will be directly communicated with the uniform gas channel 1230 and the reaction cavity 200, but the present application is not limited thereto.

[0062] Please refer to Figures 2 to 4 , all the gas injection channels 120 are arranged at intervals and arranged in several rows.

[0063] In some embodiments, the spacing between two adjacent outlet cavities 1240 (including the spacing between adjacent outlet cavities in the OA direction and the spacing in the OB direction) is 0.1 mm to 5 mm.

[0064] Specifically, in the embodiment, the process gas supplied by the gas source can flow in a laminar flow state when entering the reaction cavity 200 through the gas injection channels 120 arranged in rows, thereby meeting the wafer epitaxy process requirements and ensuring the wafer yield. More specifically, each process gas can be delivered to the reaction cavity 200 through adjacent gas injection channels 120 so as to regulate the flow rate and concentration of the process gas mixed uniformly and distributed uniformly when entering the reaction cavity 200. Preferably, each process gas is delivered to the reaction cavity 200 through gas injection channels 120 located in the same row and adjacent to each other; each process gas is a mixed gas of a raw gas and an oxygen-containing gas, but the present application is not limited thereto.

[0065] Specifically, in the embodiment, since all the gas injection channels 120 share one gas outlet 130, the laminar flow effect of the process gas supplied by the gas source when entering the reaction cavity 200 through the gas injection channels 120 and the gas outlet 130 is related to the distance between adjacent gas outlets 1240; preferably, the distance between two adjacent gas outlets 1240 is 0.1-2 mm, but the present application is not limited thereto.

[0066] In some embodiments, the gas outlet 130 is provided with a plurality of partitions to divide the gas outlet 130 into a plurality of gas outlet zones according to requirements, and the process gas mixed uniformly and distributed uniformly can be delivered into the reaction cavity 200 in zones; at this time, the laminar flow effect of the process gas entering the reaction cavity 200 is also related to the distance between adjacent gas outlet zones. Preferably, each process gas is delivered into the reaction cavity 200 through adjacent gas outlet zones, so as to facilitate the regulation of the flow rate and concentration of the process gas mixed uniformly and distributed uniformly before entering the reaction cavity 200, but the present application is not limited thereto.

[0067] In addition, in the embodiment, the material of the gas injection device can be stainless steel; at the same time, the gas inlet 1210, the gas inlet cavity 1221, the gas mixing hole 1222, the gas mixing cavity 1223, the gas outlet cavity 1240 and the gas outlet 130 in the gas injection device are all regular shapes (cuboid or cylinder, etc.), so that the gas injection device is convenient to process and prepare, thereby effectively reducing the production cost, but the present application is not limited thereto.

[0068] On the other hand, in combination with the accompanying drawings, Figure 1 The embodiment also provides an epitaxial device, which comprises a reaction cavity 200 and a gas injection device as described above, and the gas injection device is located outside the reaction cavity 200.

[0069] Specifically, in the embodiment, the gas injection device can make the process gas supplied by the gas source mixed uniformly and distributed uniformly and enter the reaction cavity 200 in a laminar flow state, so as to perform a reaction under heating conditions and form a uniform film on the wafer surface, thereby ensuring the wafer yield, but the present application is not limited thereto.

[0070] In another aspect, the present embodiment also provides a method for using the gas injection device as described above, comprising: step S1, supplying process gas to the gas inlets 1210; preferably, each process gas is supplied to the adjacent gas inlets 1210; step S2, mixing each process gas uniformly through the mixing holes 1222 in the corresponding mixing channels 1220; step S3, distributing each uniformly mixed process gas uniformly through the uniformizing channels 1230; and step S4, delivering each uniformly mixed and distributed process gas to the reaction chamber 200 of the epitaxial device through the gas outlet 130.

[0071] It can be understood that, in some embodiments, the step S2 comprises: expanding each process gas to a first preset volume in the corresponding gas inlet cavity 1221; compressing the process gas expanded to the first preset volume through the corresponding mixing holes 1222; and expanding the compressed process gas to a second preset volume in the corresponding mixing cavity 1223, so as to mix each process gas uniformly.

[0072] In summary, the present embodiment provides a gas injection device, an epitaxial device and a method for using the same. The gas injection device comprises a flange body, a plurality of gas injection channels and a gas outlet arranged in the flange body, and each gas injection channel comprises a gas inlet, a mixing channel and a uniformizing channel connected in sequence. Thus, the process gas supplied by a gas source can be mixed uniformly through the mixing holes in the mixing channel after entering the mixing channel through the gas inlet, and the uniformly mixed process gas can be distributed uniformly through the uniformizing channel, so as to deliver the uniformly mixed and distributed process gas to the reaction chamber through the gas outlet, so as to perform epitaxial process treatment and ensure the yield of wafers. In the present embodiment, the process gas supplied by the gas source will be expanded for the first time when entering the gas inlet cavity from the gas inlet, compressed for the first time when entering the mixing hole from the gas inlet cavity, and expanded for the second time when entering the mixing cavity from the mixing hole, so that the process gas is fully mixed by repeatedly experiencing expansion and compression in the gas mixing channel, thereby improving the uniformity of the process gas. Meanwhile, the uniformizing channel has a narrow and high shape, so that the uniformly mixed process gas will be distributed in a narrow and high state as a whole after entering the uniformizing channel, thereby making the uniformly mixed process gas be distributed more uniformly.

[0073] Although the present application has been described in detail by the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present application. Various modifications and substitutions to the present application will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present application should be defined by the appended claims.

Claims

1. A gas injection apparatus for an epitaxial apparatus, characterized by, The gas injection device comprises: a flange body and a plurality of gas injection channels and gas outlets arranged in the flange body; each of the gas injection channels comprises: a gas inlet connected with a gas source; a mixing channel in communication with the gas inlet; a plurality of mixing holes arranged in the mixing channel for mixing the process gas supplied by the gas source uniformly; and a uniform gas channel in communication with the mixing channel for uniformly distributing the uniformly mixed process gas; the gas outlet is in communication with the uniform gas channel of the gas injection channel and the reaction chamber of the epitaxial equipment for delivering the uniformly mixed and distributed process gas into the reaction chamber; in the length direction of the gas injection device, the length of the gas injection channel is less than the length of the gas outlet, and the diameter of the mixing hole is less than the length of the mixing channel.

2. The gas injection apparatus of claim 1, wherein, a plurality of partitions are arranged in the gas outlet to divide the gas outlet into a plurality of gas outlet areas.

3. The gas injection apparatus of claim 1, wherein, The mixing channel further comprises: a gas inlet cavity between the gas inlet and the mixing hole in communication with the gas inlet and all the mixing holes respectively for expanding the process gas supplied by the gas source to a first preset volume and delivering the process gas to the mixing hole for compression; a mixing cavity between the mixing hole and the uniform gas channel in communication with all the mixing holes and the uniform gas channel respectively for expanding the compressed process gas of the mixing hole to a second preset volume to uniformly mix the process gas supplied by the gas source.

4. The gas injection apparatus of claim 1, wherein, each of the gas injection channels further comprises a gas outlet cavity between the uniform gas channel and the gas outlet in communication with the uniform gas channel and the gas outlet respectively for allowing the uniformly mixed and distributed process gas to enter the gas outlet at a preset flow rate.

5. The gas injection apparatus of claim 1, wherein The diameter of the mixing hole is 1mm-3mm, and the height is 1mm-5mm.

6. The gas injection apparatus of claim 3, wherein The length of the mixing cavity is the same as the length of the gas inlet cavity, and the width of the mixing cavity is the same as the width of the gas inlet cavity and less than 25mm.

7. The gas injection apparatus of claim 3, wherein The length of the uniform gas channel is the same as the length of the mixing cavity, and the width of the uniform gas channel is less than 5mm.

8. The gas injection apparatus of claim 4, wherein, The length of the gas outlet cavity is the same as the length of the uniform gas channel, and the width of the gas outlet cavity is greater than the width of the uniform gas channel.

9. The gas injection apparatus of claim 8, wherein, The width of the communication between the gas outlet cavity and the gas outlet is adjustable.

10. The gas injection apparatus of claim 9, wherein, The width of the communication between the gas outlet cavity and the gas outlet ranges from 1mm to 8mm.

11. The gas injection apparatus of claim 4, wherein, All the gas injection channels are arranged in a plurality of rows.

12. The gas injection apparatus of claim 11, wherein, The distance between two adjacent gas outlet cavities is 0.1mm-5mm.

13. The gas injection device according to any one of claims 1 to 12, wherein Each process gas is delivered into the reaction chamber through adjacent gas injection channels.

14. The gas injection apparatus of claim 13, wherein, Each process gas is a mixture of raw gas and oxygen-containing gas.

15. An epitaxial apparatus, comprising: The epitaxial equipment comprises: a reaction chamber; and the gas injection device as claimed in any one of claims 1-14 is arranged outside the reaction chamber.

16. A method of using a gas injection device as claimed in any one of claims 1 to 14, characterized in that The method comprises: supplying process gas to the gas inlet; uniformly mixing each process gas through the mixing holes in the corresponding mixing channel; uniformly distributing each uniformly mixed process gas through the corresponding uniform gas channel; and delivering each uniformly mixed and distributed process gas into the reaction chamber of the epitaxial equipment through the gas outlet.

17. The method of using a gas injection device of claim 16, wherein, The step of mixing each process gas uniformly through the mixing holes in the corresponding mixing passage includes: expanding each process gas to a first preset volume in the corresponding gas inlet cavity; compressing the process gas expanded to the first preset volume through the corresponding mixing holes; expanding the compressed process gas to a second preset volume in the corresponding mixing cavity to mix each process gas uniformly.

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