CVD reaction apparatus and gas supply method for use in the same

Abstract

Embodiments of the present application disclose a CVD reaction device and a gas supply method applied to the CVD reaction device. The CVD reaction device comprises a reactor, a first pipeline, at least two second pipelines, at least one third pipeline and a first flow controller. The reactor is provided with a reaction cavity. The first pipeline forms a flow path for the reaction gas to flow between the inlet end and the outlet end. Each second pipeline is in communication with the outlet end and the reactor respectively. The third pipeline is in communication with at least one second pipeline and can supply carrier gas to the second pipeline. The first flow controller is arranged in the third pipeline, and the first flow controller can adjust the flow of the carrier gas flowing into the second pipeline from the third pipeline, so that the CVD reaction device can change the flow ratio of the reaction gas flowing into the reaction cavity from different second pipelines by changing the gas flow of the third pipeline.

Description

Technical Field

[0001] This application relates to the field of process and equipment technology for manufacturing semiconductor components, and in particular to a CVD reaction apparatus and a gas supply method applied to the CVD reaction apparatus. Background Technology

[0002] In metal-organic chemical vapor deposition (MOCVD) technology, reactive gases combine in a reactor at elevated temperatures to induce chemical interactions, depositing materials onto a substrate.

[0003] Rotary disc reactors typically experience gas depletion as the reaction proceeds. To maintain a consistent reaction rate, multiple gas inlets are usually installed to ensure dynamic uniformity of the gas field within the reaction chamber. To achieve this and prevent the depletion phenomenon from affecting the reaction, the flow rate of the reactant gas entering the reaction chamber through different inlets can be independently controlled to achieve the design goal of a uniform reaction field. Therefore, a mass flow controller (MFC) is needed to control the flow rate of the reactant gas (reactant) at each inlet.

[0004] In some cases, it's necessary to change the source gas or carrier gas depending on the progress of the reaction, meaning the composition of the reactant gas will change. If the MFCs at each inlet are not adjusted, the flow rate of the reactant gas at each inlet will be impossible to control precisely. For example, when the reactant gas is supplied via bubbling, it is a mixture of source gas and carrier gas. If the type of carrier gas is switched during the reactant gas supply process, the composition of the reactant gas will change. The accuracy of the mass flow controller is closely related to the gas composition; after switching the carrier gas, the mass flow controller cannot accurately control the flow rate ratio of the reactant gas at each inlet of the reactor.

[0005] In view of this, it is necessary to develop a CVD reactor and a gas supply method for the CVD reactor to solve the problem of the inability to accurately control the flow rate ratio of the reaction gas at each gas inlet of the reactor. Summary of the Invention

[0006] The embodiments of this application provide a CVD reactor and a gas supply method for the CVD reactor, which can precisely control the flow rate ratio of the reaction gas at each gas inlet of the reactor.

[0007] To address the aforementioned technical problems, embodiments of this application disclose the following technical solutions:

[0008] On one hand, a CVD reactor is provided, including a reactor, a first pipeline, at least two second pipelines, at least one third pipeline, and a first flow controller. The reactor contains a reaction chamber. The first pipeline includes an inlet end and an outlet end downstream of the inlet end. The inlet end is connected to a reaction gas source to form a flow path for the reaction gas to flow between the inlet end and the outlet end. Each second pipeline includes a first end connected to the outlet end and a second end connected to the reactor. The second end of each second pipeline is connected to the reaction chamber through a different flow outlet. The third pipeline is connected to at least one second pipeline and is capable of supplying carrier gas to the second pipelines. The first flow controller is disposed in the third pipeline and is capable of adjusting the flow rate of the carrier gas flowing from the third pipeline into the second pipelines, so that the CVD reactor can change the flow rate ratio of the reaction gas flowing into the reaction chamber from the different second pipelines by changing the gas flow rate in the third pipeline.

[0009] In addition to one or more of the features disclosed above, or alternatively, the first conduit is configured as a straight-through conduit from the reaction gas source to the second conduit. Each pipe in both the first and second conduits is of the same diameter.

[0010] In addition to one or more of the features disclosed above, or alternatively, the number of third pipes is the same as the number of second pipes, and they correspond one-to-one with each second pipe, with each third pipe connected to a corresponding second pipe. The number of first flow controllers corresponds to the number of third pipes, with each first flow controller located on a corresponding third pipe.

[0011] In addition to one or more of the features disclosed above, or alternatively, the pipe diameters of any two second conduits are equal. The lengths of any two second conduits are equal.

[0012] In addition to one or more of the features disclosed above, or as an alternative, the flow rate of the carrier gas in a single third pipeline is not higher than the flow rate of the first pipeline. The relationship between the flow rate A of the gas flowing in the first pipeline, the total flow rate B of the gas flowing in the third pipeline, and the number n of the second pipelines is: B = A * (n-1).

[0013] In addition to one or more of the features disclosed above, or alternatively, the CVD reactor also includes a controller connected to a first flow controller for controlling the first flow controller to regulate the flow rate of carrier gas supplied from the third pipeline to the second pipeline.

[0014] In addition to one or more of the features disclosed above, or alternatively, the CVD reaction apparatus also includes a bubbling device that supplies reaction gas, which includes source gas participating in the reaction within the reaction chamber and carrier gas not participating in the reaction within the reaction chamber. The type of carrier gas can be switched. A first pipeline is directly connected to the bubbling device, and the bubbling device supplies the reaction gas to the reaction chamber through the first and second pipelines via different flow paths. Neither the first nor the second pipeline is equipped with a flow controller.

[0015] In addition to one or more of the features disclosed above, or alternatively, the bubbling device includes an inlet and an outlet, with a first conduit connected to the outlet. The CVD reactor also includes a fourth conduit connected to the inlet, wherein two or more fourth conduits are configured to be arranged side-by-side and converging relative to the inlet, so as to supply different types of carrier gases through different fourth conduits.

[0016] In addition to one or more of the features disclosed above, or alternatively, the CVD reactor also includes a second flow controller. The second flow controller corresponds to the fourth line to regulate the flow rate of the carrier gas in the corresponding fourth line.

[0017] In addition to one or more of the features disclosed above, or alternatively, at least two second pipelines are respectively branched off from the first pipeline and connected in parallel. The gas pressure in the first pipeline is not less than the gas pressure at the junction of the third pipeline and the second pipeline.

[0018] In addition to one or more of the features disclosed above, or alternatively, the CVD reaction apparatus includes a flow meter. The flow meter is disposed in a second line, wherein the flow meter is located upstream of the junction of the third line and the second line.

[0019] On the other hand, a gas supply method for use in a CVD reactor is also provided, comprising:

[0020] The reaction gas is supplied through the first pipeline;

[0021] The first pipeline is diverted by at least two second pipelines, and the reaction gas supplied by the first pipeline is fed into the reactor via different routes through the second pipelines, with each pipe of each second pipeline being a pipe of the same diameter.

[0022] Connect the third pipeline to a second pipeline and supply carrier gas to the second pipeline through the third pipeline;

[0023] Adjust the flow rate of the carrier gas in the third pipeline, thereby adjusting the flow rate ratio of the reactant gas in at least two second pipelines.

[0024] In addition to one or more of the features disclosed above, or as an alternative, methods for adjusting the flow rate of the carrier gas in the third pipeline, thereby adjusting the flow rate ratio of the reactant gas in at least two second pipelines, include:

[0025] The flow rate of the reactant gas in the current second pipeline is increased by reducing the amount of gas input from the third pipeline to the current second pipeline, thereby increasing the proportion of the reactant gas flow rate in the current second pipeline among all second pipelines; conversely, the flow rate of the reactant gas in the current second pipeline is decreased by increasing the amount of gas input from the third pipeline to the current second pipeline, thereby decreasing the proportion of the reactant gas flow rate in the current second pipeline among all second pipelines.

[0026] In addition to one or more of the features disclosed above, or alternatively, prior to the step of adjusting the flow rate of the carrier gas in the third line, thereby adjusting the flow rate ratio of the reactant gases in at least the two second lines, the method further includes:

[0027] A flow meter is provided in each of the second pipelines and upstream of the junction of the third pipeline and the second pipeline;

[0028] Based on the values ​​displayed by the flow meters corresponding to at least two second pipelines, the flow rate ratio of the reactant gas in at least two second pipelines is obtained.

[0029] One of the above technical solutions has the following advantages or beneficial effects:

[0030] In this embodiment, when it is necessary to adjust the flow rate of the reactant gas in each of the second pipelines, the flow rate of the carrier gas in the third pipeline is adjusted by a first flow controller, so that the reactant gas supplied by the first pipeline can be redistributed to the multiple second pipelines according to a predetermined rule. Since the composition of the carrier gas remains constant, the first flow controller can accurately control the flow rate of the carrier gas in the third pipeline, thereby effectively adjusting the effective flow area of ​​the second pipeline for the transport of the reactant gas, and indirectly achieving the purpose of controlling the flow rate ratio of the reactant gas in each of the second pipelines. In addition, based on the flow rate of the reactant gas in the first pipeline and the flow rate ratio of the reactant gas in each of the second pipelines, the flow rate of the reactant gas in each of the second pipelines can also be accurately controlled, that is, the flow rate of the reactant gas at each inlet of the reactor can also be accurately controlled. Attached Figure Description

[0031] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0032] Figure 1 This is a schematic diagram of the structure of a CVD reaction device related to this technology;

[0033] Figure 2 This is a schematic diagram of the structure of a CVD reaction apparatus according to an embodiment of this application;

[0034] Figure 3 This is a schematic diagram of the CVD reaction apparatus according to another embodiment of this application;

[0035] Figure 4 This is a schematic diagram of the structure of a CVD reaction apparatus according to another embodiment of this application;

[0036] Figure 5 This is a flowchart of an embodiment of the gas supply method applied to a CVD reactor 100 according to this application.

[0037] Explanation of reference numerals in the attached figures:

[0038] 100 - CVD reaction apparatus; 101 - Reactor; 103 - Reaction chamber; 105 - Gas inlet; 107 - Gas inlet; 109 - First pipeline; 111 - Second pipeline; 113 - Second pipeline; 115 - Third pipeline; 117 - Third pipeline; 119 - First flow controller; 121 - First flow controller; 122 - Reaction gas source; 123 - Bubbling device; 125 - Fourth pipeline; 127 - Fourth pipeline; 129 - Second flow controller; 131 - Second flow controller; 133 - Carrier gas source; 135 - Carrier gas source; 137 - Flow meter; 138 - Flow meter; 139 - Fifth pipeline; 141 - Carrier gas source; 147 - Controller; 149 - Support; 151 - Supporting surface; 161 - Gas inlet; 163 - Second pipeline; 165 - Third pipeline; 167 - First flow controller; L - Axis. Detailed Implementation

[0039] To make the objectives, technical solutions, and beneficial effects of this application clearer, the following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates this application. It should be understood that the specific embodiments described in this specification are merely for explaining this application and are not intended to limit it.

[0040] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0041] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, a direct connection, or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0042] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0043] In the following embodiments, "pipeline" consists of one or more pipes.

[0044] Please see Figure 1 . Figure 1 This is a schematic diagram of the structure of a CVD reaction device 100 based on related technologies.

[0045] The CVD reactor 100 includes a reactor 101 and a support 149. The reactor 101 has a reaction chamber 103. The support 149 is rotatably housed within the reaction chamber 103 about an axis L. The support 149 has a bearing surface 151, which is circular and perpendicular to the axis of rotation L, and is used to support a substrate. The reactor 101 also contains other conventional components (not shown) for promoting the desired epitaxial growth reaction, such as a heating system for maintaining the support 149 at a higher temperature, a temperature monitoring device, and a pressure monitoring device.

[0046] Reactor 101 has multiple air inlets 153a, 153b, 153c, and 153d connected to reaction chamber 103. Air inlets 153a, 153b, 153c, and 153d are located above and facing the supporting surface 151. Air inlets 153a, 153b, 153c, and 153d are radially spaced along the rotating shaft L. Air inlets 153a, 153b, 153c, and 153d are respectively aligned with different annular regions of the supporting surface 151.

[0047] The CVD reactor 100 also includes a reaction gas source 122. The reaction gas source 122 supplies reaction gas. The reaction gas can react with a substrate within the reactor 101 to grow an epitaxial layer. The reaction gas contains one or more components of the semiconductor to be grown. For example, the reaction gas may contain one or more metal alkyl compounds used for compound semiconductor deposition. The reaction gas can be a mixture of various chemical substances and may contain inert, non-reactive components. When the desired reaction involves etching the substrate surface, the reaction gas may contain components capable of reacting with the substrate surface material.

[0048] The reaction gas source 122 is connected to the gas inlets 153a, 153b, 153c, and 153d of the reactor 101 through multiple pipelines, and supplies reaction gas to the reactor 101. Mass flow controllers 157a, 157b, 157c, and 157d are installed on the pipelines corresponding to each gas inlet 153a, 153b, 153c, and 153d to regulate the flow rate of the reaction gas in the pipelines.

[0049] The CVD reactor 100 also includes a carrier gas source 141. The carrier gas source 141 is used to supply carrier gas. The carrier gas is a gas that does not participate in the deposition reaction, such as an inert gas.

[0050] The carrier gas source 141 is connected to the inlets 153a, 153b, 153c, and 153d through multiple pipelines and supplies carrier gas to the reactor 101. Mass flow controllers 159a, 159b, 159c, and 159d are installed on the pipelines corresponding to each inlet 153a, 153b, 153c, and 153d to regulate the flow rate of the carrier gas in the pipelines.

[0051] To reduce eddies and turbulence within the reaction chamber 103, the total flow rates of the gas entering through inlets 153a, 153b, 153c, and 153d are equal. The total flow rate of the gas entering through each inlet 153a, 153b, 153c, and 153d is the sum of the flow rates of the reactant gas and the carrier gas flowing into the reaction chamber 103 through that inlet 153a, 153b, 153c, and 153d. Furthermore, to ensure a uniform molar amount of reactants reaching the substrate surface, the flow rates of the reactant gas entering the reaction chamber 103 through inlets 153a, 153b, 153c, and 153d are different. Specifically, the flow rate of the reactant gas entering through inlet 153a differs from that entering through inlet 153d, but the total gas flow rate entering through inlet 153a is the same as the total gas flow rate entering through inlet 153d.

[0052] Therefore, mass flow controllers 157a, 157b, 157c, and 157d are needed to control the flow rate of the reaction gas corresponding to each air inlet 153a, 153b, 153c, and 153d, and mass flow controllers 159a, 159b, 159c, and 159d are needed to control the flow rate of the carrier gas corresponding to each air inlet 153a, 153b, 153c, and 153d.

[0053] In some cases, the composition of the reactant gas changes, making it impossible to accurately control the flow rate of the reactant gas at each inlet 153a, 153b, 153c, and 153d. For example, when the reactant gas is supplied by bubbling, it is a mixture of source gas and carrier gas. During the reactant gas supply process, the type of carrier gas may be switched as needed, resulting in changes in the composition of the reactant gas. The accuracy of the mass flow controllers 157a, 157b, 157c, and 157d is closely related to the gas composition. After switching the carrier gas, the mass flow controllers 157a, 157b, 157c, and 157d cannot accurately control the flow rate of the reactant gas at each inlet 153a, 153b, 153c, and 153d.

[0054] In the following embodiments of this application, when the composition of the reactant gas changes, the flow rate of the carrier gas (whose composition does not change) at each inlet of the reactor is controlled by a flow controller, thereby indirectly controlling the flow rate of the reactant gas at each inlet of the reactor.

[0055] Please see Figures 2 to 4 . Figure 2 This is a schematic diagram of the structure of a CVD reaction apparatus according to an embodiment of this application. Figure 3 This is a schematic diagram of the CVD reaction apparatus according to another embodiment of this application. Figure 4 This is a schematic diagram of the structure of a CVD reaction apparatus according to another embodiment of this application.

[0056] The CVD reaction apparatus 100 includes a reactor 101, a first pipeline 109, at least two second pipelines, at least one third pipeline, and a first flow controller.

[0057] The reactor 101 is provided with a reaction chamber 103 to accommodate the substrate. The reactor 101 also has an air inlet that communicates with the reaction chamber 103.

[0058] The first pipeline 109 includes an inlet end and an outlet end located downstream of the inlet end. The inlet end is connected to the reaction gas source 141 to form a flow path for the reaction gas to flow between the inlet end and the outlet end.

[0059] Each second pipeline includes a first end connected to the outlet and a second end connected to the reactor 101. The second end of each second pipeline is connected to the reaction chamber 103 through a different flow outlet.

[0060] exist Figure 2 In the illustrated embodiment, there are two second pipes. The first end of the second pipe 111 is connected to the outlet end of the first pipe 109, and the second end of the second pipe 111 is connected to the air inlet 105 of the reactor 101. The first end of the second pipe 113 is connected to the outlet end of the first pipe 109, and the second end of the second pipe 113 is connected to the air inlet 107 of the reactor 101. That is, the outlet end of the first pipe 109 branches into two branches.

[0061] exist Figure 3 In the illustrated embodiment, the number of second conduits is three. Figure 3 The illustrated embodiment is in Figure 2 A second pipeline 163 is added to the embodiment shown. The first end of the second pipeline 163 is connected to the outlet end of the first pipeline 109, and the second end of the second pipeline 163 is connected to the air inlet 161 of the reactor 101. That is, the outlet end of the first pipeline 109 branches into three branches.

[0062] The number of second pipelines can also be four, five, or more. The number of air inlets of reactor 101 is equal to the number of second pipelines, and they correspond one-to-one.

[0063] The third pipeline is connected to at least one second pipeline and is capable of supplying carrier gas to the second pipeline.

[0064] exist Figure 2In the illustrated embodiment, there are two third pipelines. The third pipeline 115 is connected to the second pipeline 111 and can supply carrier gas into the second pipeline 111. The connection point P2 between the third pipeline 115 and the second pipeline 111 is located downstream of the connection point P1 between the second pipeline 111 and the first pipeline 109. The third pipeline 117 is connected to the second pipeline 113 and can supply carrier gas into the second pipeline 113. The connection point P3 between the third pipeline 117 and the second pipeline 113 is located downstream of the connection point P1 between the second pipeline 113 and the first pipeline 109.

[0065] exist Figure 3 In the illustrated embodiment, there are three third pipelines. Because... Figure 3 The illustrated embodiment is in Figure 2 Based on the illustrated embodiment, a second pipeline 163 is added, and correspondingly, a third pipeline 165 is also added. The third pipeline 165 is connected to the second pipeline 163 and can supply carrier gas into the second pipeline 163. The connection point P4 between the third pipeline 167 and the second pipeline 163 is located downstream of the connection point P1 between the second pipeline 163 and the first pipeline 109109.

[0066] exist Figure 2 , Figure 3 In the illustrated embodiment, the number of third pipes is equal to the number of second pipes, and they correspond one-to-one. Each third pipe is connected to a corresponding second pipe.

[0067] In other embodiments, the number of third conduits may be less than the number of second conduits. For example, in Figure 4 In the illustrated embodiment, there are two second pipelines and one third pipeline. The third pipeline 115 is connected to the second pipeline 111 and can supply carrier gas into the second pipeline 111. The connection point P2 between the third pipeline 115 and the second pipeline 111 is located downstream of the connection point P1 between the second pipeline 111 and the first pipeline 109.

[0068] The first flow controller is installed in the third pipeline and can regulate the flow rate of the carrier gas flowing from the third pipeline into the second pipeline.

[0069] Figure 2 In the illustrated embodiment, the first flow controller 119 is disposed in the third pipeline 115. The first flow controller 121 is disposed in the third pipeline 117.

[0070] Figure 3 In the illustrated embodiment, a first flow controller 119 is disposed in the third pipeline 115. A first flow controller 121 is disposed in the third pipeline 117. A first flow controller 167 is disposed in the third pipeline 165.

[0071] Figure 4In the embodiment shown, the first flow controller 119 is disposed in the third pipeline 115.

[0072] In some embodiments, the first flow controller is a mass flow controller (MFC).

[0073] Regarding the transport of reactant gases, when a pipeline is already occupied, the actual amount that can pass through it decreases. In the embodiments of this application, a first flow controller can adjust the flow rate of carrier gas flowing from the third pipeline into the second pipeline, so that the CVD reactor 100 can change the relative effective flow area of ​​different second pipelines by changing the gas flow rate of the third pipeline, thereby changing the flow rate ratio of reactant gases flowing into the reaction chamber 103 through the second pipeline. The relative effective flow area refers to the actual effective flow area of ​​the pipeline for the transport of reactant gases.

[0074] When it is necessary to adjust the flow rate of the reactant gas in each of the second pipelines, the flow rate of the carrier gas in the third pipeline is adjusted by the first flow controller, so that the reactant gas supplied by the first pipeline 109 can be redistributed to the multiple second pipelines according to a predetermined rule. Since the composition of the carrier gas remains constant, the first flow controller can accurately control the flow rate of the carrier gas in the third pipeline, thereby achieving the effect of controlling the flow rate ratio of the reactant gas in each of the second pipelines.

[0075] The following describes how to change the flow rate ratio of the reaction gas flowing into the reaction chamber 103 from different second pipelines, depending on whether the first pipeline 109 is connected to the outside.

[0076] The first scenario: The first pipeline 109 is isolated from the outside. Specifically, the first pipeline 109 and the second pipeline together form a fluid channel, which is a closed structure, so that all the reaction gas supplied by the first pipeline 109 is input into the reactor 101. "Closed structure" specifically means that the reaction gas in the fluid channel will not be output to the outside except through the air inlet into the reactor 101, but external gas (carrier gas) may be input into the fluid channel.

[0077] exist Figure 2In the illustrated embodiment, increasing the flow rate b1 of the carrier gas in the third pipe 115 and / or decreasing the flow rate b2 of the carrier gas in the third pipe 117 can correspondingly decrease the aforementioned relatively effective flow area of ​​the second pipe 111 and / or increase the aforementioned relatively effective flow area of ​​the second pipe 113. This, in turn, can decrease the flow rate a1 of the reactant gas in the second pipe 111 and increase the flow rate a2 of the reactant gas in the second pipe 113, thereby reducing the ratio of the flow rate a1 of the reactant gas in the second pipe 111 to the flow rate a2 of the reactant gas in the second pipe 113. Conversely, decreasing the flow rate b1 of the carrier gas in the third pipe 115 and / or increasing the flow rate b2 of the carrier gas in the third pipe 117 can increase the flow rate a1 of the reactant gas in the second pipe 111 and decrease the flow rate a2 of the reactant gas in the second pipe 113, thereby increasing the ratio of the flow rate a1 of the reactant gas in the second pipe 111 to the flow rate a2 of the reactant gas in the second pipe 113.

[0078] exist Figure 3 In the illustrated embodiment, increasing the flow rate b1 of the carrier gas in the third pipeline 115 can decrease the flow rate a1 of the reactant gas in the second pipeline 111, and increase the flow rate a2 of the reactant gas in the second pipeline 113, as well as increase the flow rate a3 of the reactant gas in the second pipeline 163. Decreasing the flow rate b1 of the carrier gas in the third pipeline 115 can increase the flow rate a1 of the reactant gas in the second pipeline 111, and decrease the flow rate a2 of the reactant gas in the second pipeline 113, as well as decrease the flow rate a3 of the reactant gas in the second pipeline 163.

[0079] exist Figure 4 In the illustrated embodiment, increasing the flow rate b1 of the carrier gas in the third pipeline 115 reduces the flow rate a1 of the reactant gas in the second pipeline 111 and increases the flow rate a2 of the reactant gas in the second pipeline 113, thereby reducing the ratio of the flow rate a1 of the reactant gas in the second pipeline 111 to the flow rate a2 of the reactant gas in the second pipeline 113. Conversely, reducing the flow rate b1 of the carrier gas in the third pipeline 115 increases the flow rate a1 of the reactant gas in the second pipeline 111 and decreases the flow rate a2 of the reactant gas in the second pipeline 113, thereby increasing the ratio of the flow rate a1 of the reactant gas in the second pipeline 111 to the flow rate a2 of the reactant gas in the second pipeline 113.

[0080] The second scenario: A pressure-limiting valve (not shown) is installed on the first pipeline 109. This valve opens when the gas pressure in the first pipeline 109 is greater than or equal to a predetermined value, and closes when it is less than the predetermined value. When the pressure-limiting valve is open, the first pipeline 109 is connected to the outside environment, and some of the reaction gas is released. This configuration ensures that the gas pressure in the first pipeline 109 does not exceed the predetermined value. In this case, the gas flow rate input into the reaction chamber by the exhaust system consisting of the first, second, and third pipelines remains constant.

[0081] exist Figure 2In the illustrated embodiment, increasing the flow rate b1 of the carrier gas in the third pipeline 115 reduces the flow rate a1 of the reactant gas in the second pipeline 111, while the flow rate a2 of the reactant gas in the second pipeline 113 remains unchanged. The ratio of the flow rate a1 of the reactant gas in the second pipeline 111 to the flow rate a2 of the reactant gas in the second pipeline 113 decreases. Conversely, decreasing the flow rate b1 of the carrier gas in the third pipeline 115 increases the flow rate a1 of the reactant gas in the second pipeline 111, while the flow rate a2 of the reactant gas in the second pipeline 113 remains unchanged. The ratio of the flow rate a1 of the reactant gas in the second pipeline 111 to the flow rate a2 of the reactant gas in the second pipeline 113 increases.

[0082] exist Figure 3 In the illustrated embodiment, increasing the flow rate b1 of the carrier gas in the third pipeline 115 can decrease the flow rate a1 of the reactant gas in the second pipeline 111, while the flow rate a2 of the reactant gas in the second pipeline 113 remains unchanged, and the flow rate a3 of the reactant gas in the second pipeline 163 remains unchanged. Decreasing the flow rate b1 of the carrier gas in the third pipeline 115 can increase the flow rate a1 of the reactant gas in the second pipeline 111, while the flow rate a2 of the reactant gas in the second pipeline 113 remains unchanged, and the flow rate a3 of the reactant gas in the second pipeline 163 remains unchanged.

[0083] exist Figure 4 In the illustrated embodiment, increasing the flow rate b1 of the carrier gas in the third pipeline 115 reduces the flow rate a1 of the reactant gas in the second pipeline 111, while the flow rate a2 of the reactant gas in the second pipeline 113 remains unchanged. This results in a decrease in the ratio of the flow rate a1 of the reactant gas in the second pipeline 111 to the flow rate a2 of the reactant gas in the second pipeline 113. Conversely, decreasing the flow rate b1 of the carrier gas in the third pipeline 115 increases the flow rate a1 of the reactant gas in the second pipeline 111, while the flow rate a2 of the reactant gas in the second pipeline 113 remains unchanged. This again results in an increase in the ratio of the flow rate a1 of the reactant gas in the second pipeline 111 to the flow rate a2 of the reactant gas in the second pipeline 113.

[0084] In summary, by adjusting the flow rate of the carrier gas flowing from the third pipeline into the second pipeline, the flow rate ratio of the reaction gas flowing into the reaction chamber 103 from different second pipelines can be changed.

[0085] Please see Figure 2 In some embodiments, the first conduit 109 is configured as a straight-through conduit from the reaction gas source 122 to the second conduits 111 and 113. Specifically, each of the first conduit 109 and the second conduits 111 and 113 is a conduit of the same diameter. Here and below, "conduit of the same diameter" means that the diameter of the conduit does not change, and there is no explicit or implicit comparison of the diameters of the multiple conduits.

[0086] Within the fluid channel formed by the first pipeline 109 and the second pipelines 111 and 113, the distribution of the reactant gas can be adaptively adjusted. When the carrier gas flow rate in the second pipeline increases, the flow rate of the reactant gas distributed from the first pipeline 109 to the second pipeline decreases. Conversely, when the carrier gas flow rate in the second pipeline decreases, the flow rate of the reactant gas distributed from the first pipeline 109 to the second pipeline increases.

[0087] Furthermore, when the fluid channel is a closed structure, if the flow rate of the reaction gas distributed by the first pipe 109 to one of the second pipes decreases, the flow rate of the reaction gas distributed by the first pipe 109 to the other second pipes increases. Similarly, if the fluid channel is closed, if the flow rate of the reaction gas distributed by the first pipe 109 to one of the second pipes increases, the flow rate of the reaction gas distributed by the first pipe 109 to the other second pipes decreases.

[0088] For example, if the carrier gas flow rate in the second pipe 111 increases, the flow rate of the reactant gas distributed from the first pipe 109 to the second pipe 111 decreases. If the fluid channel is a closed structure, the flow rate of the reactant gas distributed from the first pipe 109 to the second pipe 113 increases, which is equivalent to a portion of the reactant gas being transferred from the second pipe 111 to the second pipe 113. If the fluid channel is an open structure, the flow rate of the reactant gas distributed from the first pipe 109 to the second pipe 113 remains unchanged, which is equivalent to a portion of the reactant gas being discharged to the outside from the second pipe 111.

[0089] like Figure 2 and Figure 3 As shown, in some embodiments, the number of third pipelines is the same as the number of second pipelines, and they correspond one-to-one, with each third pipeline connected to a corresponding second pipeline. The number of first flow controllers corresponds to the number of third pipelines, with each first flow controller located on a corresponding third pipeline. Each first flow controller regulates the flow rate of carrier gas flowing into the second pipeline from its corresponding third pipeline. This configuration allows for more precise regulation of the flow rate of the reactant gas in each second pipeline.

[0090] In some embodiments, the diameter of each pipe in any two second pipelines is equal. The length of any two second pipelines is equal. The environmental factors of each second pipeline are the same, and the only factor affecting the flow rate of the reactant gas in the second pipeline is the flow rate of the carrier gas input to the second pipeline. This makes it easier to adjust the flow rate of the reactant gas in each second pipeline.

[0091] In some embodiments, the flow rate of the carrier gas in the third pipeline is not higher than the flow rate of the first pipeline 109. In a preferred embodiment, the relationship between the flow rate A of the gas flowing through the first pipeline 109, the sum B of the flow rate B of the gas flowing through the third pipeline, and the number n of the second pipelines is: B = A*(n-1).

[0092] Specifically, in Figure 2 In the illustrated embodiment, n = 2, A = B. When the fluid channel formed by the first pipe 109, the second pipes 111, and 113 is a closed structure, and the diameter and length of each pipe in the second pipes 111 and 113 are equal, the gas flow rates in the second pipes 111 and 113 are equal, both being A. Under these conditions, the flow rates of the reactant gases in the two second pipes can be controlled directly and in the simplest way. For example, if the flow controller 121 controls the flow rate of the third pipe 117 to be c, then the flow rate of the reactant gas in the second pipe 113 is Ac, and the flow rate of the reactant gas in the second pipe 111 is c. During the design phase of the CVD reactor 100, the specifications of the pipes need to be designed based on the gas flow rates within the pipes, for example, limiting the diameter and pressure-bearing capacity of each pipe. If the gas flow rates inside the first pipeline 109, the second pipeline 111, and the second pipeline 113 are all equal during operation, then the specifications of the first pipeline 109, the second pipeline 111, and the second pipeline 113 can be standardized, simplifying the design process and facilitating on-site installation and maintenance.

[0093] Specifically, in Figure 3 In the illustrated embodiment, n = 3, B = 2A. When the fluid channel formed by the first pipe 109, the second pipes 111, 113, and 163 is a closed structure, and the diameter and length of each pipe in the second pipes 111, 113, and 163 are equal, the gas flow rate in the second pipes 111, 113, and 163 is equal, and is A. Under these conditions, the flow rate of the reactant gas in the three second pipes can be controlled directly and in the simplest way.

[0094] Please see Figure 2 In some embodiments, the CVD reactor 100 further includes a controller 147, which is connected to first flow controllers 119 and 121. The controller 147 can control the first flow controller 119 to regulate the flow rate of carrier gas supplied from the third pipeline 115 to the second pipeline 111, and can control the first flow controller 121 to regulate the flow rate of carrier gas supplied from the third pipeline 117 to the second pipeline 113. The controller 147 is, for example, a computer. Control connections are indicated by dashed lines in the figures. Control connections can be wired or wireless. Wired connections include, for example, Ethernet connections. Wireless connections include, for example, Bluetooth connections.

[0095] Please see Figure 2In some embodiments, the CVD reaction apparatus 100 further includes a bubbling device 123. The bubbling device 123 supplies reaction gas. The reaction gas includes source gas participating in the reaction within the reaction chamber 103 and carrier gas not participating in the reaction within the reaction chamber 103. The type of carrier gas can be switched. A first conduit 109 is directly connected to the bubbling device 123. The bubbling device 123 supplies the reaction gas to the reaction chamber 103 via the first conduit 109 and second conduits 111 and 113 through different flow paths. No flow controllers are provided for the first conduit 109 and the second conduits 111 and 113.

[0096] Specifically, the bubbling device 123 includes an inlet end and an outlet end. The first pipeline 109 is connected to the outlet end. The CVD reaction device 100 also includes fourth pipelines 125 and 127 connected to the inlet end, wherein the fourth pipelines 125 and 127 are configured as two or more parallel and converging arrangements relative to the inlet end, so that different types of carrier gases can be supplied through different fourth pipelines 125 and 127.

[0097] Carrier gas sources 133 and 135 are used to supply different types of carrier gases. Specifically, carrier gas source 133 is used to supply a first carrier gas, and carrier gas source 135 is used to supply a second carrier gas. The first and second carrier gases are of different types. For example, the first carrier gas is hydrogen, and the second carrier gas is nitrogen or argon.

[0098] One end of the fourth pipe 125 is connected to the carrier gas source 133, and the other end extends into the bubbling device 123 to immerse the source gas, so that the first carrier gas overflows from the source gas and mixes with the source gas to form a reaction gas. One end of the fourth pipe 127 is connected to the carrier gas source 135, and the other end extends into the bubbling device 123 to immerse the source gas, so that the second carrier gas overflows from the source gas and mixes with the source gas to form a reaction gas.

[0099] Depending on the process requirements, the reaction gas supplied by the first pipeline 109 may include the following: a mixture of source gas and first carrier gas, a mixture of source gas and second carrier gas, or a mixture of source gas, first carrier gas and second carrier gas.

[0100] Please see Figure 2 In some embodiments, the CVD reactor 100 further includes a second flow controller. The second flow controller corresponds to a fourth pipeline to regulate the flow rate of the carrier gas in the corresponding fourth pipeline.

[0101] Specifically, the second flow controller 129 is used to measure and regulate the flow rate of the first carrier gas in the fourth pipeline 125. The second flow controller 131 is used to measure and regulate the flow rate of the second carrier gas in the fourth pipeline 127. The composition of the carrier gas in the fourth pipelines 125 and 127 corresponding to the second flow controllers 129 and 131 is constant; therefore, the second flow controllers 129 and 131 can accurately control the flow rate of the carrier gas in their respective fourth pipelines 125 and 127. The flow rate of the carrier gas in the reaction gas can be obtained through the second flow controllers 129 and 131, thereby obtaining the flow rate of the reaction gas supplied by the first pipeline 109.

[0102] Please see Figure 2 In some embodiments, at least two second pipes 111 and 113 are respectively branched off from the same location of the first pipe 109 and connected in parallel. The air pressure in the first pipe 109 is not less than the air pressure at the connection point of the third pipes 115 and 117 with the second pipes 111 and 113.

[0103] Please see Figure 2 In some embodiments, the CVD reaction apparatus 100 includes a mass flow meter (MFM). The flow meter is disposed in a second pipeline, wherein the flow meter is located upstream of the junction of the third pipeline and the second pipeline.

[0104] Specifically, flow meter 137 is installed in the second pipeline 111 to measure the flow rate of the reaction gas in the second pipeline 111. Flow meter 138 is installed in the second pipeline 113 to measure the flow rate of the reaction gas in the second pipeline 113.

[0105] In the case where the CVD reactor 100 includes a controller 147, the controller 147 is connected to flow meters 137 and 138 respectively. The controller 147 is used to control the flow meter 137 to measure the flow rate of the reaction gas in the second pipeline 111. The controller 147 is also used to control the flow meter 138 to measure the flow rate of the reaction gas in the second pipeline 113.

[0106] Please see Figure 2 as well as Figure 5 . Figure 5 This is a flowchart of an embodiment of the gas supply method applied to a CVD reactor 100 according to this application.

[0107] The gas supply method applied to the CVD reactor 100 includes the following steps:

[0108] Step S201: Supply reaction gas through the first pipeline 109;

[0109] Step S202: The first pipeline 109 is diverted through at least two second pipelines 111 and 113, and the reaction gas supplied by the first pipeline 109 is input into the reactor 101 through the second pipelines 111 and 113 via different routes. Each pipe of each second pipeline 111 and 113 is a pipe of the same diameter.

[0110] Step S203: Connect the third pipelines 115 and 117 to a second pipeline 111 and 113, and supply carrier gas to the second pipelines 111 and 113 through the third pipelines 115 and 117;

[0111] Step S204: Adjust the flow rate of the carrier gas in the third pipelines 115 and 117, thereby adjusting the flow rate ratio of the reaction gas in at least two second pipelines 111 and 113.

[0112] In some embodiments, a method for adjusting the flow rate of carrier gas in third pipelines 115 and 117, thereby adjusting the flow rate ratio of reactant gas in at least two second pipelines 111 and 113, includes:

[0113] By reducing the amount of gas input from the third pipes 115 and 117 to the current second pipes 111 and 113, the flow rate of the reactant gas in the current second pipes 111 and 113 is increased, thereby increasing the proportion of the reactant gas flow rate in the current second pipes 111 and 113 among all second pipes 111 and 113; conversely, by increasing the amount of gas input from the third pipes 115 and 117 to the current second pipes 111 and 113, the flow rate of the reactant gas in the current second pipes 111 and 113 is decreased, thereby decreasing the proportion of the reactant gas flow rate in the current second pipes 111 and 113 among all second pipes 111 and 113.

[0114] In some embodiments, prior to the step of adjusting the flow rate of the carrier gas in the third pipelines 115 and 117, thereby adjusting the flow rate ratio of the reactant gas in at least two second pipelines 111 and 113, the method further includes:

[0115] Flow meters 137 and 138 are provided in each of the second pipes 111 and 113 and upstream of the junction of the third pipes 115 and 117 with the second pipes;

[0116] Based on the values ​​displayed by the flow meters 137 and 138 corresponding to at least two second pipelines 111 and 113, the flow rate ratio of the reaction gas in at least two second pipelines 111 and 113 is obtained.

[0117] Application Scenario 1:

[0118] Please see Figure 2 The CVD reaction apparatus 100 includes a reactor 101, a reaction gas source 122, and an auxiliary gas source 141.

[0119] The reactor 101 has a reaction chamber 103 and air inlets 105 and 107 connected to the reaction chamber 103.

[0120] The reaction gas source 122 is used to supply reaction gas by bubbling. The reaction gas source 122 includes a bubbling device 123, fourth pipelines 125 and 127, and carrier gas sources 133 and 135. Carrier gas sources 133 and 135 are used to supply different types of carrier gases. Specifically, carrier gas source 133 supplies a first carrier gas, and carrier gas source 135 supplies a second carrier gas. The first and second carrier gases are of different types. For example, the first carrier gas is hydrogen, and the second carrier gas is nitrogen. The number of carrier gas sources 133 and 135 can also be three or more, correspondingly allowing for more combinations of reaction gas components.

[0121] The CVD reactor 100 also includes second flow controllers 129 and 131. Second flow controller 129 is used to measure and regulate the flow rate of the first carrier gas in the fourth pipeline 125. Second flow controller 131 is used to measure and regulate the flow rate of the second carrier gas in the fourth pipeline 127.

[0122] The composition of the carrier gas in the fourth pipelines 125 and 127 corresponding to the second flow controllers 129 and 131 is constant. Therefore, the second flow controllers 129 and 131 can accurately control the flow rate of the carrier gas in the corresponding fourth pipelines 125 and 127. The flow rate of the carrier gas in the reaction gas can be obtained through the second flow controllers 129 and 131, and thus the flow rate of the reaction gas supplied by the reaction gas source 122 can be obtained.

[0123] Auxiliary gas source 141 is used to supply auxiliary gas (carrier gas). The auxiliary gas must not react with the substrate. The auxiliary gas can be the same as the carrier gas described above.

[0124] The CVD reaction apparatus 100 also includes a first pipeline 109, a second pipeline 111 and 113, a third pipeline 115 and 117, and a fifth pipeline 139.

[0125] The first pipe 109 is connected to the reaction gas source 122 (bubbling device 123), and the reaction gas source 122 supplies reaction gas through the first pipe 109. The second pipe 111 is connected to both the first pipe 109 and the gas inlet 105 of the reactor 101. The second pipe 113 is connected to both the first pipe 109 and the gas inlet 107 of the reactor 101. Specifically, the second pipes 111 and 113 branch off from the end of the first pipe 109.

[0126] The first pipeline 109, the second pipelines 111 and 113 together form a fluid channel. The fluid channel is a closed structure. The reaction gas in the fluid channel will not be output to the outside except for being input into the reactor 101 through the gas inlet 105 and 107. However, external gas (auxiliary gas) may be input into the fluid channel.

[0127] In this configuration, each pipe in the second conduits 111 and 113 has the same diameter. The lengths of the second conduits 111 and 113 are also equal.

[0128] The fifth pipeline 139 is connected to the auxiliary gas source 141. The third pipelines 115 and 117 are connected to the fifth pipeline 139 respectively, and the auxiliary gas source 141 supplies auxiliary gas through the third pipelines 115 and 117 respectively.

[0129] The third pipe 115 is connected to the second pipe 111, and the connection point P2 between the third pipe 115 and the second pipe 111 is located downstream of the connection point P1 between the second pipe 111 and the first pipe 109.

[0130] The third pipe 117 is connected to the second pipe 113, and the connection point P3 between the third pipe 117 and the second pipe 113 is located downstream of the connection point P1 between the second pipe 113 and the first pipe 109.

[0131] The CVD reactor 100 also includes first flow controllers 119 and 121. The first flow controller 119 is disposed in the third pipeline 115 and is used to regulate the flow rate of the auxiliary gas in the third pipeline 115. The first flow controller 121 is disposed in the third pipeline 117 and is used to regulate the flow rate of the auxiliary gas in the third pipeline 117.

[0132] The CVD reactor 100 also includes flow meters 137 and 138. Flow meter 137 is installed in the second pipeline 111 and is used to measure the flow rate of the reaction gas in the second pipeline 111. Flow meter 138 is installed in the second pipeline 111 and is used to measure the flow rate of the reaction gas in the second pipeline 113.

[0133] The CVD reaction apparatus 100 also includes a controller 147. The controller 147 is connected to the first flow controllers 119 and 121 and the flow meters 137 and 138 respectively.

[0134] Controller 147 is used to control the first flow controller 119 to measure and regulate the flow rate of the auxiliary gas in the third pipeline 115. Controller 147 is used to control the first flow controller 121 to measure and regulate the flow rate of the auxiliary gas in the third pipeline 117. Controller 147 is used to control the flow meter 137 to measure the flow rate of the reaction gas in the second pipeline 111. Controller 147 is used to control the flow meter 138 to measure the flow rate of the reaction gas in the second pipeline 113.

[0135] The second pipelines 111 and 113 are connected to the same cavity (reaction cavity 103), and the outlet pressures of the second pipelines 111 and 113 are consistent. Furthermore, each pipe in the second pipelines 111 and 113 has the same diameter and length, resulting in consistent gas flow rates within them. Adjusting the auxiliary gas flow rates in the third pipelines 115 and 117 will cause a change in the flow rate of the reaction gas entering the second pipelines 111 and 113; that is, the proportion of reaction gas entering the second pipelines 111 and 113 will be redistributed by the first pipeline 109.

[0136] by Figure 2 For example, the following formulas are satisfied: a1=((A+B) / 2)-b1; a2=((A+B) / 2)-b2; A=a1+a2; B=b1+b2. Where, A is the flow rate of the reaction gas supplied by the reaction gas source 122, a1 is the flow rate of the reaction gas in the second pipeline 111, a2 is the flow rate of the reaction gas in the second pipeline 113, B is the flow rate of the auxiliary gas supplied by the auxiliary gas source 141, b1 is the flow rate of the auxiliary gas in the third pipeline 115, and b2 is the flow rate of the auxiliary gas in the third pipeline 117.

[0137] During the operation of the CVD reactor 100, the controller 147 acquires the flow direction and flow rate of the reaction gas in the second pipelines 111 and 113, and adjusts the flow rate of the auxiliary gas in the third pipelines 115 and 117 based on the feedback of the flow rate value, so as to accurately realize the flow rate ratio of the reaction gas in the second pipelines 111 and 113.

[0138] Depending on the different distribution ratios of the reaction gas supplied by the reaction gas source 122 in the second pipelines 111 and 113, the CVD reaction apparatus 100 is defined to have a first state and a second state.

[0139] In the first and second states of the CVD reactor 100, the values ​​of A and B remain unchanged, both being 100 L / min.

[0140] In the first state, the CVD reaction apparatus 100 has a flow rate of a1 = 20 L / min, a2 = 80 L / min, b1 = 80 L / min, and b2 = 20 L / min.

[0141] In the second state, the CVD reaction apparatus 100 has a flow rate of a1 = 30 L / min, a2 = 70 L / min, b1 = 70 L / min, and b2 = 30 L / min.

[0142] When the CVD reactor 100 needs to switch from the first state to the second state, the controller 147 controls the first flow controllers 119 and 121 to operate, changing b1 from 80 L / min to 70 L / min, and simultaneously changing b2 from 20 L / min to 30 L / min. After the change is completed, the controller 147 can verify whether the values ​​of a1 and a2 meet the expectations based on the detection results of the flow meters 137 and 138.

[0143] Application Scenario 2:

[0144] Please see Figure 3 In this embodiment, the second pipelines 111, 113, and 163 are connected to the same cavity (reaction cavity 103), and the outlet pressures of the second pipelines 111, 113, and 163 are consistent. Furthermore, each pipe in the second pipelines 111, 113, and 163 has the same diameter and length, resulting in a relatively consistent gas flow rate within them. Adjusting the auxiliary gas flow rate in the third pipelines 115, 117, and 165 will cause a change in the flow rate of the reaction gas entering the second pipelines 111, 113, and 163; that is, the first pipeline 109 redistributes the proportion of reaction gas entering the second pipelines 111, 113, and 163.

[0145] The following formulas must be satisfied: a1=((A+B) / 3)-b1;a2=((A+B) / 3)-b2;a3=((A+B) / 3)-b3;A=a1+a2+a3;B=b1+b2+b3. Where A is the flow rate of the reaction gas supplied by the reaction gas source 122, a1 is the flow rate of the reaction gas in the second pipeline 111, a2 is the flow rate of the reaction gas in the second pipeline 113, a3 is the flow rate of the reaction gas in the second pipeline 163, B is the flow rate of the auxiliary gas supplied by the auxiliary gas source 141, b1 is the flow rate of the auxiliary gas in the third pipeline 115, b2 is the flow rate of the auxiliary gas in the third pipeline 117, and b3 is the flow rate of the auxiliary gas in the third pipeline 165.

[0146] Depending on the different distribution ratios of the reaction gas supplied by the reaction gas source 122 in the second pipelines 111 and 113, the CVD reaction apparatus 100 is defined to have a first state and a second state.

[0147] In the first and second states of the CVD reactor 100, the values ​​of A and B remain unchanged, both being 90 L / min.

[0148] In the first state, the CVD reaction apparatus 100 has the following flow rates: a1 = 20 L / min, a2 = 30 L / min, a3 = 40 L / min, b1 = 40 L / min, b2 = 30 L / min, and b3 = 20 L / min.

[0149] In the second state, the CVD reaction apparatus 100 has the following flow rates: a1 = 15 L / min, a2 = 20 L / min, a3 = 55 L / min, b1 = 45 L / min, b2 = 40 L / min, and b3 = 5 L / min.

[0150] When the CVD reactor 100 needs to switch from the first state to the second state, the first flow controllers 119, 121, and 165 are controlled to change the flow rate of b1 from 40L / min to 45L / min, the flow rate of b2 from 30L / min to 40L / min, and the flow rate of b3 from 20L / min to 5L / min.

[0151] Application Scenario 3:

[0152] Please see Figure 4 The CVD reaction apparatus 100 includes a reactor 101. The reactor 101 has air inlets 105 and 107 that communicate with the reaction chamber 103.

[0153] The CVD reaction apparatus 100 also includes a first pipeline 109, a second pipeline 111 and 113, and a third pipeline 115.

[0154] The second pipe 111 is connected to the first pipe 109 and the air inlet 105 of the reactor 101. The second pipe 113 is connected to the first pipe 109 and the air inlet 107 of the reactor 101.

[0155] The first pipeline 109, the second pipelines 111 and 113 together form a fluid channel. The fluid channel is a closed structure so that all the reaction gas supplied by the first pipeline 109 is input into the reactor 101.

[0156] In this configuration, each pipe in the second conduits 111 and 113 has the same diameter. The second conduits 111 and 113 also have the same length.

[0157] The third pipeline 115 is used to supply auxiliary gas.

[0158] The third pipe 115 is connected to the second pipe 111, and the connection point P2 between the third pipe 115 and the second pipe 111 is located downstream of the connection point P1 between the second pipe 111 and the first pipe 109.

[0159] The CVD reactor 100 also includes a first flow controller 119. The first flow controller 119 is disposed in the third pipeline 115 and is used to regulate the flow rate of the auxiliary gas in the third pipeline 115.

[0160] The following formulas are satisfied: a1=((A+b1) / 2)-b1; a2=A-a1. Where, A is the flow rate of the reaction gas supplied by the reaction gas source 122, a1 is the flow rate of the reaction gas in the second pipeline 111, a2 is the flow rate of the reaction gas in the second pipeline 113, and b1 is the flow rate of the auxiliary gas in the third pipeline 115.

[0161] Depending on the different distribution ratios of the reaction gas supplied by the reaction gas source 122 in the second pipelines 111 and 113, the CVD reaction apparatus 100 is defined to have a first state and a second state.

[0162] In both the first and second states of the CVD reactor 100, the value of A remains unchanged at 100 L / min.

[0163] In the first state, the CVD reaction apparatus 100 has a1 = 50 L / min, a2 = 50 L / min, and b1 = 0 L / min.

[0164] In the second state, the CVD reaction apparatus 100 has a flow rate of a1 = 40 L / min, a2 = 60 L / min, and b1 = 20 L / min.

[0165] When the CVD reactor 100 needs to switch from the first state to the second state, the first flow controller 119 is controlled to change b1 from 0L / min to 20L / min.

[0166] In summary, the CVD reaction apparatus provided in this application embodiment can accurately control the flow rate of the reaction gas corresponding to each air inlet.

[0167] The above steps are provided only to help understand the method, structure, and core ideas of this application. Those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims.

Claims

1. A CVD reaction apparatus, characterized in that, include: A reactor, wherein a reaction chamber is provided inside the reactor; A first pipeline includes an inlet end and an outlet end located downstream of the inlet end. The inlet end is connected to a reaction gas source to form a flow path for the reaction gas to flow between the inlet end and the outlet end. At least two second pipelines, each second pipeline including a first end connected to the outlet end and a second end connected to the reactor, the second end of each second pipeline being connected to the reaction chamber through different flow outlets, the CVD reactor splitting the first pipeline through at least two second pipelines to input the reaction gas supplied by the first pipeline into the reactor through different second pipelines; At least one third pipeline, which is connected to at least one second pipeline and is capable of supplying carrier gas to the second pipeline; A first flow controller is disposed in the third pipeline and is capable of adjusting the flow rate of the carrier gas flowing from the third pipeline into the second pipeline; In this configuration, none of the second pipelines are equipped with flow controllers. The CVD reaction device changes the flow rate of the gas flowing into the reaction chamber from different second pipelines by changing the gas flow rate of the third pipeline.

2. The CVD reactor as described in claim 1, characterized in that, The first pipeline is configured as a straight-through pipeline from the reaction gas source to the second pipeline; Each pipe in the first pipeline and the second pipeline is a pipe of the same diameter.

3. The CVD reactor as described in claim 1, characterized in that, The number of the third pipelines is the same as the number of the second pipelines, and they correspond one-to-one with the second pipelines. Each of the third pipelines is connected to the corresponding second pipeline. The number of the first flow controllers corresponds to the number of the third pipelines, and each first flow controller is installed on the corresponding third pipeline.

4. The CVD reactor as described in claim 3, characterized in that, The diameter of each pipe in any two second pipelines is equal; Any two of the second pipelines are of equal length.

5. The CVD reaction apparatus as described in claim 4, characterized in that, The flow rate of the carrier gas in the third pipeline alone is not higher than the flow rate in the first pipeline; The relationship between the flow rate A of the gas flowing through the first pipeline, the total flow rate B of the gas flowing through the third pipeline, and the number n of the second pipeline is: B = A * (n-1).

6. The CVD reactor as described in claim 1, characterized in that, Also includes: A controller, which is connected to the first flow controller, is used to control the first flow controller to adjust the flow rate of the carrier gas delivered from the third pipeline to the second pipeline.

7. The CVD reaction apparatus as described in claim 1, characterized in that, Also includes: A bubbling device supplies the reaction gas, which includes a source gas that participates in the reaction within the reaction chamber and a carrier gas that does not participate in the reaction within the reaction chamber, and the type of carrier gas can be switched. The first pipeline is directly connected to the bubbling device, and the bubbling device supplies the reaction gas to the reaction chamber through the first pipeline and the second pipeline in different flow paths. The first pipeline and the second pipeline are not equipped with flow controllers.

8. The CVD reaction apparatus as described in claim 7, characterized in that, The bubbling device includes an air inlet and an air outlet, and the first pipeline is connected to the air outlet. The CVD reactor further includes a fourth pipeline connected to the air inlet, wherein the fourth pipeline is configured as two or more parallel and converging arrangements relative to the air inlet, so as to supply different types of carrier gases through different fourth pipelines.

9. The CVD reaction apparatus as described in claim 8, characterized in that, The CVD reaction apparatus further includes: A second flow controller, corresponding to the fourth pipeline, is used to regulate the flow rate of the carrier gas in the corresponding fourth pipeline.

10. The CVD reaction apparatus as described in claim 1, characterized in that, At least two second pipelines are respectively branched off from the same position of the first pipeline and connected in parallel; the air pressure in the first pipeline is not less than the air pressure at the connection point of the third pipeline and the second pipeline.

11. The CVD reactor as described in claim 1, characterized in that, The CVD reaction apparatus includes: A flow meter is installed in the second pipeline, wherein the flow meter is located upstream of the junction of the third pipeline and the second pipeline.

12. A gas supply method for a CVD reactor, characterized in that, Using the CVD reactor as described in any one of claims 1 to 11, the gas supply method includes: The reaction gas is supplied through the first pipeline; The first pipeline is diverted by at least two second pipelines, and the reaction gas supplied by the first pipeline is fed into the reactor via different routes through the second pipelines, wherein each pipe of each second pipeline is a pipe of the same diameter. The third pipeline is connected to one of the second pipelines, and carrier gas is supplied to the second pipeline through the third pipeline; Adjust the flow rate of the carrier gas in the third pipeline, thereby adjusting the flow rate ratio of the reaction gas in at least two of the second pipelines.

13. The gas supply method as described in claim 12, characterized in that, The method of adjusting the flow rate of the carrier gas in the third pipeline, thereby adjusting the flow rate ratio of the reactant gas in at least two second pipelines, includes: By reducing the amount of gas input from the third pipeline to the current second pipeline, the flow rate of the reactant gas in the current second pipeline is increased, thereby increasing the proportion of the flow rate of the reactant gas in the current second pipeline among all the second pipelines. Conversely, by increasing the amount of gas input from the third pipeline to the current second pipeline, the flow rate of the reactant gas in the current second pipeline is reduced, thereby reducing the proportion of the reactant gas flow rate in the current second pipeline among all the second pipelines.

14. The gas supply method as described in claim 12, characterized in that, Prior to the step of adjusting the flow rate of the carrier gas in the third pipeline, thereby adjusting the flow rate ratio of the reactant gas in at least two of the second pipelines, the method further includes: A flow meter is provided in each of the second pipelines and upstream of the junction of the third pipeline and the second pipeline; Based on the values ​​displayed by the flow meters corresponding to at least two of the second pipelines, the flow rate ratio of the reaction gas in at least two of the second pipelines is obtained.

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