Substrate processing device and substrate processing method

Abstract

The present invention relates to a substrate processing device and a substrate processing method. The present invention provides a substrate processing device and a substrate processing method that can prevent a nozzle baffle from crushing foreign matter present on the upper surface of a substrate when the nozzle and the nozzle baffle are integrally lowered to a contact position. The substrate processing device of the present invention applies a processing liquid to the upper surface of the substrate while conveying the substrate relative to the nozzle in a so-called floating manner, and the substrate processing device comprises: a nozzle baffle that is arranged on the front side of the nozzle in the direction of movement of the nozzle relative to the substrate and moves integrally with the nozzle; a lifting unit that lifts the nozzle and the nozzle baffle integrally; and a control unit that controls the lifting unit to perform a contact action in which the lifting unit lowers the nozzle and the nozzle baffle integrally and positions the nozzle at the contact position. Furthermore, during the contact action, the holding surface and the nozzle baffle are separated from each other when viewed from above.

Description

Technical Field

[0001] The present invention relates to a substrate processing technology for supplying a processing liquid from a nozzle and applying the processing liquid to a glass substrate for FPD (Flat Panel Display) such as a liquid crystal display device, an organic EL (Electroluminescence) display device, a semiconductor wafer, a glass substrate for a photomask, a substrate for a color filter, a substrate for a recording disk, a substrate for a solar cell, a substrate for electronic paper, and other precision electronic devices, and a substrate for semiconductor packaging (hereinafter referred to as a "substrate"). Background Art

[0002] A substrate processing device is known, which applies a processing liquid to a substrate by moving a slit nozzle having a slit-shaped discharge port relative to the substrate while discharging the processing liquid from the slit nozzle. For example, in a device described in Japanese Patent Application Publication No. 2011-212544, the slit nozzle is located at a predetermined coating position above a stage surface of a stage, and a chuck moves the substrate in a so-called floating manner while holding a portion of the substrate from the lower side. Then, the substrate processing device supplies and applies the processing liquid to the upper surface of the substrate while floating and transporting the substrate.

[0003] In the substrate processing device, a nozzle baffle is provided in consideration of the fact that foreign matter or the like (hereinafter referred to as "foreign matter") protrudes upward on the upper surface side of the substrate. That is, if the processing liquid is applied in the presence of foreign matter, the slit nozzle collides with the foreign matter, thereby hindering the application of the processing liquid. That is, due to the above-mentioned collision, the applied processing liquid or the slit nozzle may be adversely affected. Therefore, in the above-mentioned conventional device, a nozzle baffle is arranged on the front side of the slit nozzle in the nozzle travel direction in which the slit nozzle moves relative to the substrate.

[0004] In the above-mentioned substrate processing device, before the slit nozzle is moved relative to the substrate to perform the coating process, the slit nozzle is lowered from a position separated upward from the substrate (upper position P1 described later) to a position close to the upper surface of the substrate (contact position P3 described later) and a curved liquid surface of the processing liquid is formed between the nozzle and the substrate. At this time, the nozzle baffle plate that is raised and lowered integrally with the slit nozzle is also lowered integrally with the slit nozzle, so that the top (lower end) of the nozzle baffle plate is located near the upper surface of the substrate. If foreign matter exists on the upper surface of the substrate and the chuck that supports the substrate from below is located directly below the nozzle baffle plate, the foreign matter is sandwiched between the nozzle baffle plate and the chuck plate. As a result, the foreign matter is sometimes crushed and attached to the nozzle baffle plate.

[0005] In this way, if the substrate is processed in a state where foreign matter is attached to the nozzle flapper, the foreign matter attached to the nozzle flapper may damage the substrate, which may result in a problem of reduced yield. Summary of the invention

[0006] The present invention has been made in view of the above problems, and its object is to provide a substrate processing apparatus and a substrate processing method which can prevent the nozzle flapper from crushing foreign matter existing on the upper surface of the substrate when the nozzle and the nozzle flapper are integrally lowered to a contact position.

[0007] A substrate processing device in one embodiment of the present invention applies a processing liquid to the upper surface of a substrate, and is characterized in that it comprises: a nozzle having a nozzle; a floating portion that sprays gas toward the lower surface of the substrate to float the substrate; a moving portion that uses a holding surface of a substrate holding portion to hold a portion of the lower surface of the substrate floated by the floating portion while moving the substrate relative to the nozzle; a nozzle baffle that is arranged on the front side of the nozzle in a direction of movement of the nozzle in which the nozzle moves relative to the substrate by the moving portion, and moves integrally with the nozzle; a lifting portion that lifts and lowers the nozzle and the nozzle baffle integrally; and a control portion that controls the lifting portion to execute a contact action in which the lifting portion lowers the nozzle and the nozzle baffle integrally and positions the nozzle at a contact position, and during the contact action, the holding surface and the nozzle baffle are separated from each other when viewed from above.

[0008] In addition, another aspect of the substrate processing method of the present invention is characterized in that it includes: a coating process, in which a part of the lower surface of the substrate is held by a holding surface of a substrate holding portion and a gas is sprayed toward the lower surface of the substrate to float the substrate, while the substrate is relatively transported relative to a nozzle positioned at a contact position, and a processing liquid is sprayed from a nozzle outlet to apply the processing liquid to the upper surface of the substrate; and a contact process, in which, before the coating process, the nozzle and a nozzle baffle arranged on the front side of the nozzle in a nozzle travel direction in which the nozzle moves relative to the substrate are integrally lowered to the contact position, and in the contact process, the nozzle baffle and the holding surface are separated from each other when viewed from above.

[0009] In the case of conveying a substrate by a so-called floating method, the substrate is floated by gas sprayed onto its lower surface, and a part of the substrate is held from below. In this floating state, the substrate is conveyed relative to the nozzle integrated with the nozzle flapper. Therefore, when the contact action (process) of lowering the nozzle to the contact position is performed, the nozzle flapper also descends together with the nozzle. At this time, if there is a foreign object in the area below the nozzle flapper on the upper surface of the substrate, the nozzle flapper moves downward while contacting the foreign object. Here, if the holding surface of the substrate holding portion holding the lower surface of the substrate is located below the nozzle flapper, the nozzle flapper and the holding surface sometimes sandwich the foreign object from the upper and lower directions and crush the foreign object. However, in the present invention, the nozzle flapper and the holding surface are separated from each other when viewed from above. That is, there is no holding surface below the nozzle flapper, and the lower surface area of ​​the substrate located below the nozzle flapper is floated only by gas spraying. As a result, the above-mentioned sandwiched foreign object does not occur, thereby preventing the nozzle flapper from crushing the foreign object.

[0010] As described above, according to the present invention, when the nozzle and the nozzle flapper are integrally lowered to the contact position, it is possible to prevent the nozzle flapper from crushing foreign matter present on the upper surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a diagram schematically showing the overall structure of a coating apparatus as a first embodiment of a substrate processing apparatus according to the present invention.

[0012] Figure 2 This is a plan view of the substrate processing apparatus as viewed from above the vertical axis.

[0013] Figure 3 is from Figure 2 Plan view of the disassembled coating mechanism.

[0014] Figure 4 It is shown Figure 1 FIG. 1 is a perspective view of the overall structure of a slit nozzle and a nozzle baffle used in a substrate processing apparatus shown in FIG.

[0015] Figure 5A This is a side view of the slit nozzle and the nozzle baffle positioned at the upper position as viewed from the width direction.

[0016] Figure 5B This is a side view of the slit nozzle and the nozzle baffle in contact operation as viewed from the width direction.

[0017] Figure 6 It is shown by Figure 1 Flow chart of coating action performed by the coating device shown.

[0018] Figure 7 It is a diagram showing a second embodiment of the substrate processing apparatus of the present invention.

[0019] Figure 8 It is a diagram showing a third embodiment of the substrate processing apparatus according to the present invention.

[0020] Fig. 9 It is a diagram showing a fourth embodiment of a substrate processing apparatus according to the present invention.

[0021] Description of reference numerals:

[0022] 1: Coating device (substrate processing device)

[0023] 3: Floating part

[0024] 7: Coating mechanism

[0025] 8: Nozzle drive mechanism (lifting part)

[0026] 9: Control unit (control unit)

[0027] 51a to 51h: chuck (holding member, substrate holding portion)

[0028] 51s: Keep the face

[0029] 52: Adsorption and movement control mechanism (moving part)

[0030] 71: (Slit) Nozzle

[0031] 72: Nozzle baffle

[0032] 711: (Slit nozzle) outlet

[0033] Dt: transport direction

[0034] FM2: Foreign Matter

[0035] L1, L2: Separation interval

[0036] P3: Contact position

[0037] Rn: Non-hold area

[0038] S: Substrate

[0039] Sf: upper surface (of substrate)

[0040] X: Nozzle travel direction

[0041] Z: Plumb direction DETAILED DESCRIPTION

[0042] Figure 1 1 is a diagram schematically showing the overall structure of a coating device as a first embodiment of a substrate processing device of the present invention. Figure 1The slit coater 1 is a slit coater for coating a coating liquid on an upper surface Sf of a substrate S that is conveyed in a horizontal posture from the left side to the right side. For example, the coating device 1 can be preferably used to form a uniform coating film by coating a coating liquid containing a material of a resist film, a coating liquid containing an electrode material, or other processing liquids on an upper surface Sf of various substrates S such as a glass substrate or a semiconductor substrate.

[0043] In addition, in order to clarify the configuration relationship of the various parts of the device in the following figures, Figure 1 As shown in the figure, set the right-handed XYZ orthogonal coordinate system. Set the conveying direction of the substrate S to "X direction", and Figure 1 The horizontal direction from the left side to the right side of the device is called the "+X direction", and the opposite direction is called the "-X direction". In addition, the front side of the device (the near side in the figure) in the horizontal direction Y perpendicular to the X direction is called the "-Y direction", and the back side of the device is called the "+Y direction". In addition, the upward direction and the downward direction in the plumb direction Z are respectively called the "+Z direction" and the "-Z direction".

[0044] In the coating device 1, along the conveying direction Dt of the substrate S, i.e. (+X direction), an input conveyor 100, an input transfer unit 2, a floating unit 3, an output transfer unit 4, and an output conveyor 110 are arranged closely in sequence. As described in detail below, these components form a conveying path for the substrate S extending in a roughly horizontal direction.

[0045] The processing object is the substrate S. Figure 1 The input conveyor 100 is carried into the left side of the input conveyor 100. The input conveyor 100 has a roller conveyor 101 and a rotation drive mechanism 102 for rotationally driving the roller conveyor 101. By the rotation of the roller conveyor 101, the substrate S is transported to the downstream side, i.e., the (+X) direction, in a horizontal posture. The input transfer unit 2 has a roller conveyor 21 and a rotation and lifting drive mechanism 22. The rotation and lifting drive mechanism 22 has the function of rotationally driving the roller conveyor 21 and the function of lifting the roller conveyor 21. By the rotation of the roller conveyor 21, the substrate S is further transported to the (+X) direction. In addition, by lifting and lowering the roller conveyor 21, the plumb bob position of the substrate S is changed. Through the input transfer unit 2 constructed in this way, the substrate S is transferred from the input conveyor 100 to the floating unit 3.

[0046] Figure 2 This is a plan view of the substrate processing device viewed from above the plumb line. Figure 3 is from Figure 2 A plan view of the disassembled coating mechanism. Figure 4 It is shown Figure 1 FIG. 1 is a perspective view of the overall structure of a slit nozzle and a nozzle baffle used in a substrate processing apparatus shown in FIG. Figure 5A and Figure 5BThis is a side view of the slit nozzle and nozzle baffle viewed from the width direction. Figure 5B FIG. 2 shows the situation when the nozzle 71 is positioned at the contact position P3. Figure 5A The nozzle is positioned at an upper position P1 which is higher than the contact position P3. Figure 5A and Figure 5B In the figure, the chucks 51b and 51d are marked with dots. Figure 7 to Figure 9 In the figure, the chuck is also marked.

[0047] The specific mechanical structure of the coating device 1 will be described below with reference to these figures. For some mechanisms, a more detailed structure can be understood by referring to the description of Japanese Patent Publication No. 2011-212544. Figure 2 and Figure 3 The description of the rollers included in the input conveyor 100 and the like is omitted.

[0048] like Figures 2 to 4 As shown, the floating portion 3 is composed of two stages. The upstream floating stage 3A and the downstream floating stage 3C are each formed with a plurality of air ejection holes 31 dispersed in a matrix on the entire surface of a plate-shaped stage. And, by supplying compressed air to each ejection hole 31, the substrate S is floated by the airflow generated by the ejection of compressed air from each ejection hole 31. Thus, in the upstream floating stage 3A and the downstream floating stage 3C, the substrate S floats from the above-mentioned stage surface to a predetermined floating height, for example, 10 to 500 microns. As shown in FIG. Figure 1 and Figure 2 As shown, in order to supply compressed air to each of the ejection holes 31, a floating control mechanism 35 is provided.

[0049] Although not shown in the figure, the downstream floating stage 3C has a plurality of lifting pins in addition to the above-mentioned ejection hole 31. Figure 1 As shown, in order to raise and lower the lifting pins, a lifting pin driving mechanism 34 is provided. A plurality of lifting pins are provided to pass through the gap of the ejection hole 31 and to be spaced at a predetermined interval, and to be able to be opposite to the entire lower surface Sb of the substrate S. Furthermore, the lifting pins are driven to be raised and lowered in the plumb direction (Z-axis direction) by the lifting pin driving mechanism 34 provided below the loading table surface. That is, when descending, the top end of the lifting pin descends to a position closer to the (-Z) direction side than the loading table surface of the downstream floating loading table 3C, and when ascending, the top end of the lifting pin rises to a position where the substrate S is handed over to the transfer robot (not shown). Since the lower surface of the substrate S is supported and lifted by the lifting pins that rise in this way, the substrate S rises from the loading table surface of the downstream floating loading table 3C. Thus, the substrate S can be unloaded from the coating device 1 by the transfer robot.

[0050] On the other hand, the central floating stage 3B is constructed in the following manner: it has a higher floating accuracy than the upstream floating stage 3A and the downstream floating stage 3C. That is, the central floating stage 3B has a rectangular plate-shaped stage surface. In the central floating stage 3B, a plurality of holes are arranged in a matrix shape with a narrower spacing than the ejection holes 31 arranged in the upstream floating stage 3A and the downstream floating stage 3C. In addition, unlike the upstream floating stage 3A and the downstream floating stage 3C, in the central floating stage 3B, half of the holes function as ejection holes 32 for compressed air, and the remaining half function as suction holes 33. That is, compressed air is ejected from the ejection holes 32 toward the lower surface Sb of the substrate S, and the compressed air is sent into the space between the stage surface and the lower surface Sb of the substrate S. On the other hand, it is configured so that air is sucked from the space SP through the suction holes 33. In this way, by ejecting and sucking air into the above-mentioned space, in the above-mentioned space, the airflow of the compressed air ejected from each ejection hole 32 expands in the horizontal direction, and then is sucked from the suction hole 33 adjacent to the ejection hole 32, so that the pressure balance in the air layer (pressure gas layer) expanded into the above-mentioned space becomes more stable, so that the floating height of the substrate S can be controlled with high precision and stability. In addition, the floating control mechanism 35 controls the supply of compressed air to each ejection hole 32 and the suction of air from the suction hole 33.

[0051] The substrate S carried into the floating part 3 via the input transfer part 2 is applied with a propulsion force in the (+X) direction by the rotation of the roller conveyor 21, and is carried to the upstream floating stage 3A. The upstream floating stage 3A, the central floating stage 3B, and the downstream floating stage 3C support the substrate S in a floating state, but do not have the function of moving the substrate S in the horizontal direction. The substrate S on the floating part 3 is carried out by the substrate carrying part 5 arranged below the upstream floating stage 3A, the central floating stage 3B, and the downstream floating stage 3C.

[0052] The substrate conveying unit 5 includes a chuck mechanism 51, which supports the substrate S from below by partially contacting the peripheral portion of the lower surface of the substrate S, and an adsorption and movement control mechanism 52, which has a function of applying negative pressure to the adsorption pad 511 of the adsorption member provided at the upper end of the chuck mechanism 51 to adsorb and hold the substrate S, and a function of reciprocating the chuck mechanism 51 in the X direction. In more detail, the chuck mechanism 51 of the substrate conveying unit 5 includes four chucks 51a to 51d. Among these chucks 51a to 51d, the chucks 51a and 51b arranged on the (+Y) side are mounted on the upper side of the end of the (-Y) side of the base 521. In addition, the chucks 51a and 51b are connected to each other in a state separated from each other in the X direction via the base 521. And, in a state of maintaining the connection state, the chucks 51a and 51b are supported by the moving guide 87L extending in the X direction on the base 10 so as to be movable in the X direction. In addition, the two chucks 51a and 51b can move in the X direction along the moving guide 87L. In addition, an adsorption member (not shown) is provided on the upper surface of the chucks 51a and 51b. That is, the entire upper surface of the chucks 51a and 51b functions as a holding surface 51s for adsorbing and holding the lower surface peripheral portion of the substrate S. As described in detail later, when performing the contact operation, the holding surface 51s of the chuck 51b on the (+X) side has a predetermined relationship with the nozzle baffle 72.

[0053] The chucks 51c and 51d provided on the (-Y) side are also similarly mounted on the upper side of the end portion on the (+Y) side of the base 521. In addition, the chucks 51c and 51d are connected to each other in a state of being separated from each other in the X direction via the base 521. And, while maintaining the connected state, they are supported by the moving guide 87R extending along the X direction on the base 10 so as to be movable in the X direction. In addition, adsorption members (not shown) are also provided on the upper surfaces of the chucks 51c and 51d, and the entire upper surfaces of the chucks 51c and 51d function as a holding surface 51s for adsorbing and holding the peripheral portion of the lower surface of the substrate S. As described in detail later, when performing the contact action, the holding surface 51s of the chuck 51d on the (+X) side has a predetermined relationship with the nozzle baffle 72.

[0054] The control unit 9 controls the positions of the chucks 51a to 51d so that the chucks 51a and 51c are always located at the same position in the X direction, and the chucks 51b and 51d are always located at the same position in the X direction. Thus, the four chucks 51a to 51d move as a chuck mechanism 51 that is apparently integrated.

[0055] The chuck mechanism 51 holds the substrate S moved from the input transfer unit 2 to the float unit 3. In this state, the chuck mechanism 51 moves in the (+X) direction, thereby transporting the substrate S from above the upstream float stage 3A to above the downstream float stage 3C via above the central float stage 3B. The transported substrate S is handed over to the output transfer unit 4 arranged on the (+X) side of the downstream float stage 3C.

[0056] The output transfer unit 4 includes a roller conveyor 41 and a rotation and lifting drive mechanism 42. The rotation and lifting drive mechanism 42 has the function of rotating and driving the roller conveyor 41 and the function of lifting and lowering the roller conveyor 41. The rotation of the roller conveyor 41 applies a propulsion force in the (+X) direction to the substrate S, and the substrate S is further transported along the transport direction Dt. In addition, the vertical position of the substrate S is changed by the lifting and lowering of the roller conveyor 41. The substrate S is transferred from above the downstream floating stage 3C to the output conveyor 110 by the output transfer unit 4.

[0057] The output conveyor 110 includes a roller conveyor 111 and a rotation drive mechanism 112 for rotationally driving the roller conveyor 111. The substrate S is further conveyed in the (+X) direction by the rotation of the roller conveyor 111, and the substrate S is finally carried out of the coating device 1. In addition, the input conveyor 100 and the output conveyor 110 may also be provided as a part of the structure of the coating device 1, or may be provided separately from the coating device 1. In addition, for example, a substrate carrying mechanism of another unit provided on the upstream side of the coating device 1 may also be used as the input conveyor 100. In addition, a substrate receiving mechanism of another unit provided on the downstream side of the coating device 1 may also be used as the output conveyor 110.

[0058] On the conveying path of the substrate S conveyed in the above manner, a coating mechanism 7 for applying the coating liquid to the upper surface Sf of the substrate S is arranged. The coating mechanism 7 has a slit nozzle 71. Figure 1 As shown in FIG. 1 , the slit nozzle 71 is connected to the nozzle driving mechanism 8. The nozzle driving mechanism 8 includes a lifting unit for lifting the slit nozzle 71 in the Z direction and a moving unit for moving the slit nozzle 71 in the X direction. Therefore, the slit nozzle 71 is positioned at the coating position (at the top of the central floating stage 3B) by the lifting unit and / or the moving unit operating according to the instruction from the control unit 9. Figure 4 The position P2 indicated by the solid line in FIG. 1 ), the upper position separated upward from the coating position P2 (at Figure 5A The position P1 indicated by the solid line in FIG. 1 ), the contact position for performing the contact action slightly below the coating position P2 (at Figure 5BThe position P3 shown by the solid line in the figure) and the maintenance position (omitted from the figure). In addition, the slit nozzle 71 is connected to a coating liquid supply mechanism (omitted from the figure), and the coating liquid is supplied from the coating liquid supply mechanism, and the coating liquid, i.e., the treatment liquid, is sprayed out from the spray port 711 opened downward at the bottom of the nozzle.

[0059] The ejection port 711 of the slit nozzle 71 is extended in the Y direction and supported by the nozzle support part 701 so as to be able to eject the coating liquid to the lower side of the plumb (-Z side). The nozzle support part 701 is connected to the nozzle driving mechanism 8. In addition, when the coating liquid is supplied to the upper surface Sf of the substrate S through the slit nozzle 71, the control unit 9 controls the lifting part and the moving part so that the slit nozzle 71 moves so that the ejection port 711 is located at the upper position P1. After that, the control unit 9 adjusts the interval (gap) between the ejection port 711 and the substrate S to a specified value by controlling the lifting part, through the descent to the contact position P3 (contact action) and the ascent to the coating position P2 (gap adjustment action). After that, in the state where the gap adjustment is completed, the coating liquid is ejected from the ejection port 711 to the upper surface Sf of the substrate S, and the substrate S is transported in the (+X) direction. That is, the slit nozzle 71 moves relative to the substrate S in the (-X) direction and performs the coating process. That is, in the present embodiment, the (-X) direction corresponds to the "nozzle moving direction" of the present invention.

[0060] In addition, the nozzle support part 701 is configured to be movable in the X direction. Specifically, a pair of moving guides 81L and 81R extending in the X direction are respectively installed on the upper surface of the (+Y) side and (-Y) side end portions of the base 10. And, the nozzle support part 701 is connected to the moving guides 81L and 81R via a slider (not shown) installed at the lower part thereof, and is freely movable in the X direction along the moving guides 81L and 81R. Therefore, the moving part is controlled by the control unit 9, and the slit nozzle 71 moves in the X direction.

[0061] like Figure 1 As shown, in order to perform prescribed maintenance on the slit nozzle 71 constructed as described above, a nozzle cleaning standby unit 79 is provided in the coating mechanism 7. The nozzle cleaning standby unit 79 mainly includes a roller 791, a cleaning portion 792, a roller groove 793, etc. The roller groove 793 is supported by a groove support portion 702 extending along the Y direction. The groove support portion 702 is engaged with the movable guides 84L and 84R via a slider (not shown) installed at its lower portion, and is freely movable in the X direction along the movable guides 84L and 84R. Therefore, the moving portion is controlled by the control unit 9, and the nozzle cleaning standby unit 79 moves in the X direction. In addition, when the slit nozzle 71 is positioned at the maintenance position, the nozzle cleaning and pre-spraying processes are appropriately performed by these components, and the ejection port 711 of the slit nozzle 71 is adjusted to a state suitable for the next coating process.

[0062] During the coating process, as described above, if foreign matter on the upper surface Sf of the substrate S moves to the coating position P2 and reaches the slit nozzle 71 during the conveyance of the substrate, it may adversely affect the applied coating liquid or the slit nozzle 71. Therefore, the nozzle baffle 72 is attached to the slit nozzle 71.

[0063] Here, as the nozzle baffle 72, for example, Figure 4 , Figure 5A as well as Figure 5B That is, the nozzle baffle 72 is made of a long strip longer than the Y-direction dimension of the substrate S and a non-flexible non-transparent material, for example, a relatively hard material that will not be damaged even if it comes into contact with a protrusion such as metal or ceramic. Figure 5A and Figure 5B As shown, the nozzle flapper 72 is supported by a flapper support portion 73 extending in the (-X) direction from the slit nozzle 71. More specifically, the nozzle flapper 72 is supported by the flapper support portion 73 via a support shaft 74 extending in the Y direction so as to be swingable in the XZ plane.

[0064] In addition, the rear end portion of the nozzle flapper 72, that is, the portion above the support shaft 74, is urged toward the (-X) direction by the spring 75, and the top end portion of the nozzle flapper 72, that is, the portion below the support shaft 74, is restricted from rotating toward the (-X) direction by the stopper 76. Thus, the top end of the nozzle flapper 72 is configured to be rotatable only toward the (+X) direction on the (-X) direction side (the front side of the slit nozzle 71 in the nozzle travel direction of the slit nozzle 71 during the coating process). Therefore, in the non-contact state between the nozzle flapper 72 and the foreign matter FM1, the nozzle flapper 72 is maintained in the state along the plumb bob direction Z by the force of the spring 75. On the other hand, if the nozzle flapper 72 and the foreign matter FM1 come into contact during the coating process, the top end of the nozzle flapper 72 overcomes the force of the spring 75 and relatively rotates and moves toward the (+X) direction relative to the slit nozzle 71. By detecting the rotational movement using a rotation detection sensor (not shown), the presence of the foreign matter FM1 can be detected before the foreign matter FM1 reaches the slit nozzle 71 .

[0065] However, when the foreign matter FM2 exists at the coating start position Ps (refer to Figure 4 ) or its vicinity, the above-mentioned problem may occur. That is, if the contact action is performed in a state where the holding surface 51s of the chucks 51b and 51d exists below the nozzle baffle 72, the nozzle baffle 72 and the holding surface 51s may sometimes sandwich and crush the foreign matter FM2 from the top and bottom directions. Therefore, in this embodiment, the coating device 1 is configured so that when the contact action is performed, the nozzle baffle 72 and the holding surface 51s are separated from each other when viewed from above. In other words, if Figure 5BAs shown in FIG. 1 , when the X-direction areas when the nozzle baffle 72 and the chucks 51b and 51d are projected from above are defined as “the nozzle baffle area R72” and “the chuck area R51”, respectively, the nozzle baffle area R72 and the chuck area R51 do not overlap. Therefore, even if there is a foreign object FM2 below the nozzle baffle 72, as shown in FIG. Figure 5B As shown, the nozzle baffle 72 also presses the foreign matter FM2 when it descends to the contact position P3, but with this pressing, a part of the substrate S (the area directly below the nozzle baffle 72) bends downward. In addition, the substrate S is transported in a floating manner, and there is an air layer (pressure gas layer) below the substrate S, which acts as a buffer. For these reasons, the foreign matter FM2 will not be crushed by the nozzle baffle 72. Moreover, in the gap adjustment action after the contact action (the nozzle rises from the contact position P3 to the coating position P2), the pressing force of the nozzle baffle 72 on the foreign matter FM2 gradually weakens. As a result, the crushing of the foreign matter FM2 can be reliably prevented.

[0066] In order to control each part of the coating device 1 configured as described above, a control unit 9 is provided. Figure 1 As shown, the control unit 9 is a general computer system structure that connects a computing unit 91 (for example, a CPU, etc.) that performs various computing processes, and a storage unit 92 (for example, a ROM, a RAM, etc.) that stores basic programs and various information to a bus. The bus is also connected to a fixed disk 93 (for example, a hard disk drive, etc.) that stores coating programs, etc., a display unit 94 (for example, a display, etc.) that displays various information, and an input unit 95 (for example, a keyboard and a mouse, etc.) that receives input from an operator. In addition, for example, a touch panel display that integrates the functions of the display unit 94 and the input unit 95 can also be used. Moreover, the computing unit 91 of the control unit 9 controls the various parts of the device according to the coating program via an interface that is omitted from the figure, and performs the coating process described below.

[0067] Figure 6 It is shown by Figure 1 Flow chart of the coating operation performed by the coating device shown in FIG. 1. In the coating device 1, the slit nozzle 71 used in the coating process is moved to the maintenance position and a preliminary ejection process is performed. In addition, the ejection and suction of the compressed air in the floating part 3 are started to prepare to float the substrate S that has been brought in (step S1). In addition, the slit nozzle 71 may be cleaned before the preliminary ejection process.

[0068] Next, the substrate S is started to be carried into the coating device 1 (step S2). The substrate S to be processed is placed on the input conveyor 100 by other processing units, a transport robot, etc. on the upstream side, and the substrate S is transported in the (+X) direction by the rotation of the roller conveyor 101. The input transfer unit 2, which positions the upper surfaces of the input conveyor 100 and the roller conveyor 21 at the same height position as the roller conveyor 101 of the input conveyor 100, cooperates with each other, and the substrate S is transported to the upper part of the upstream floating stage 3A that applies buoyancy to the substrate S by the ejection of compressed air. When the substrate S is carried into the upstream floating stage 3A, the lifting pins provided on the upstream floating stage 3A are positioned at an upper position where the upper ends thereof protrude upwards more than the upper surface of the upstream floating stage 3A by the lifting pin driving mechanism 34. As a result, the substrate S, more specifically, the two ends of the substrate S in the Y direction that abut against the lifting pins, are lifted.

[0069] Then, the chuck mechanism 51 moves in the (-X) direction to the conveying start position directly below the substrate S (step S3). Next, the substrate S is transferred to the chuck mechanism 51. Next, the chucks 51a to 51d of the chuck mechanism 51 adsorb and hold the peripheral edge of the substrate S, and move in the (+X) direction in this state. Thus, the substrate S is conveyed until the end of the (+X) side of the substrate S is located at the coating start position Ps (refer to Figure 4 ) (Step S4). When the substrate S reaches the coating start position Ps, Figure 5A and Figure 5B As shown in FIG. 1 , the chuck region R51 of the chucks 51b and 51d on the (+X) side does not overlap with the nozzle flapper region R72. That is, when viewed from above, the nozzle flapper 72 and the holding surface 51s are separated from each other. Moreover, in the present embodiment, the nozzle flapper 72 and the holding surface 51s are separated by a separation interval L1 that is longer than the thickness of the substrate S. In addition, the mutual relationship between the nozzle flapper 72 and the holding surface 51s in the X direction is maintained until the coating starts.

[0070] In parallel with this, the slit nozzle 71 is moved from the preliminary ejection position to the coating position P2 via the positions P1 and P3 and positioned (steps S5 to S8). Figure 5A As shown, the slit nozzle 71 is moved to the upper position P1 of the coating position P2 by the nozzle driving mechanism 8. Then, the slit nozzle 71 starts to descend toward the contact position P3 (step S6). Then, while the slit nozzle 71 has not reached the contact position P3 ("No" in step S7), the process returns to step S6, and the slit nozzle 71 continues to descend.

[0071] In such a contact action of the slit nozzle 71, if the nozzle baffle 72 contacts the foreign matter FM2, then the nozzle baffle 72 descends while pressing the foreign matter FM2, but corresponding to the descent, the substrate S bends downward to prevent the crushing of the foreign matter FM2. Then, when the slit nozzle 71 reaches the contact position P3, the coating liquid attached to the vicinity of the ejection port 711 of the slit nozzle 71 contacts the upper surface of the substrate S at the coating start position Ps. As a result, a meniscus of the coating liquid is formed on the upper surface of the substrate S at the coating start position Ps.

[0072] After the meniscus is formed, the slit nozzle 71 is raised from the contact position P3 by the nozzle driving mechanism 8 by a distance corresponding to the thickness of the coating liquid, and the distance between the discharge port 711 and the upper surface of the substrate S, namely, the so-called coating gap, is adjusted.

[0073] Following the adjustment of the coating gap, the coating operation is started (step S9). That is, the coating liquid ejected from the ejection port 711 of the slit nozzle 71 lands on the upper surface Sf of the substrate S. In addition, the chuck mechanism 51 transports the substrate S at a constant speed so that it passes through the coating area sandwiched by the nozzle baffle 72, the slit nozzle 71, and the stage surface, thereby performing the coating operation of the slit nozzle 71 coating the coating liquid on the upper surface Sf of the substrate S, and forming a coating film CF of a certain thickness formed by the coating liquid on the upper surface Sf of the substrate S (refer to Figure 4 ).

[0074] The coating action continues until the substrate S is transported to the end position where the coating should be ended (step S10). If the substrate S reaches the end position ("Yes" in step S10), the slit nozzle 71 disengages from the coating position and returns to the maintenance position, and the pre-discharge process is performed again. In addition, at the moment when the chuck mechanism 51 reaches the end position of the transport where the downstream end of the substrate S is located on the output transfer unit 4, the movement of the chuck mechanism 51 is stopped and the adsorption hold is released. Then, the substrate S is carried out in the (+X) direction via the downstream floating stage 3C and the output transfer unit 4 (step S11), and is finally sent to the downstream side unit. If there is a next substrate to be processed ("Yes" in step S12), the same process as above is repeated. If not ("No" in step S12), the process is terminated.

[0075] As described above, according to the first embodiment, when viewed from above, the holding surfaces 51s of the chucks 51b and 51d and the nozzle flapper 72 are separated from each other near the coating start position Ps. That is, there is no holding surface 51s below the nozzle flapper 72, and the lower surface area of ​​the substrate S located below the nozzle flapper 72 is floated only by the gas injection. As a result, in the contact operation, the chucks 51b and 51d and the nozzle flapper 72 are not sandwiched, and the nozzle flapper 72 can be effectively prevented from crushing the foreign matter FM2.

[0076] In addition, when the nozzle baffle 72 presses the foreign matter FM2, the substrate S bends and absorbs part of the stress applied to the foreign matter FM2, thereby being able to further effectively prevent the foreign matter FM2 from being crushed. Figure 5B It is clear that when the nozzle baffle region R72 and the chuck region R51 are close to each other, the stress reduction effect caused by the deflection of the substrate S cannot be fully obtained, but the shear stress applied to the substrate S increases. Considering these aspects, it is preferred that the separation distance L1 between the nozzle baffle 72 and the chucks 51b and 51d in the X direction be set to be greater than the thickness of the substrate S.

[0077] Figure 7 1 is a diagram showing a second embodiment of the substrate processing apparatus of the present invention. The second embodiment differs greatly from the first embodiment in the X-direction dimensions and configuration of the chucks 51b and 51d, and the structure other than that is basically the same as the first embodiment. Therefore, the following description will focus on the differences, and the same reference numerals will be added to the same structures and actions and the description will be omitted.

[0078] In the first embodiment, the chucks 51b and 51d are arranged on the (-X) side with respect to the nozzle baffle 72. In contrast, in the second embodiment, the chucks 51b and 51d are arranged on the (+X) side with respect to the nozzle baffle 72. In addition, when such an arrangement is adopted, the distance from the chuck region R51 to the end surface on the (+X) side of the substrate S becomes shorter. Therefore, in the second embodiment, the X-direction dimension of the chucks 51b and 51d is shorter than that of the first embodiment.

[0079] As described above, in the second embodiment, when viewed from above, the holding surfaces 51s of the chucks 51b and 51d and the nozzle flapper 72 near the coating start position Ps are separated from each other by the separation distance L1 greater than the thickness of the substrate S. Therefore, the same effects as those of the first embodiment can be obtained.

[0080] Here, compared with the first embodiment, the holding force of the chucks 51b and 51d on the substrate S is reduced by the amount of reduction in the X-direction dimension of the chucks 51b and 51d. Figure 8 As shown, in order to improve the holding force, chucks 51e and 51f may be added (third embodiment).

[0081] Figure 8 1 is a diagram showing a third embodiment of a substrate processing apparatus of the present invention. The third embodiment differs from the second embodiment in that chucks 51e and 51f are added, and the other structures are basically the same as the second embodiment. Therefore, the following description will focus on the differences, and the same structures and actions will be marked with the same reference numerals and the description will be omitted.

[0082] In the third embodiment, chucks 51e and 51f are added to the (-X) side of the nozzle flapper 72. That is, when viewed from above, the holding surfaces 51s of the chucks 51b, 51d, 51e, and 51f near the coating start position Ps and the nozzle flapper 72 are separated from each other by separation intervals L1 and L2 that are greater than the thickness of the substrate S. Therefore, a pair of chucks 51b and 51e are provided on the (+Y) side so as to sandwich the nozzle flapper region R72 from the (+X) side and the (-X) side. Therefore, the region sandwiched by the chucks 51b and 51e becomes a non-holding region Rn that is recessed downward. In addition, a pair of chucks 51d and 51f are provided on the (-Y) side so as to sandwich the nozzle flapper region R72 from the (+X) side and the (-X) side. Therefore, the region sandwiched by the chucks 51d and 51f also becomes a non-holding region Rn that is recessed downward. Furthermore, in the third embodiment, when the contact action is performed, the non-holding region Rn and the nozzle flapper 72 overlap each other when viewed from above. In other words, the non-holding region Rn is extended below the nozzle flapper 72, and the holding surface 51s does not exist. Therefore, during the contact action, the chucks 51b, 51d, 51e, 51f and the nozzle flapper 72 are not sandwiched, and the nozzle flapper 72 can be effectively prevented from crushing the foreign matter FM2.

[0083] In addition, when the nozzle baffle 72 presses the foreign matter FM2, the substrate S bends and absorbs part of the stress applied to the foreign matter FM2, thereby being able to further effectively prevent the foreign matter FM2 from being crushed. Figure 8 It is clear that since the separation interval L1 between the nozzle baffle 72 and the chucks 51b and 51d and the separation interval L2 between the nozzle baffle 72 and the chucks 51e and 51f in the X direction are set to be greater than the thickness of the substrate S, it is possible to obtain the stress reduction effect caused by the deflection of the substrate S. Furthermore, by adding the chucks 51e and 51f, the coating process can be performed while the holding force of the substrate S is higher than that of the second embodiment.

[0084] However, in the third embodiment, a pair of chucks 51b and 51e are provided so as to sandwich the nozzle flapper region R72 from the (+X) side and the (-X) side, and a pair of chucks 51d and 51f are provided. Fig. 9 As shown, a chuck 51g having a block structure in which the chucks 51b and 51e are integrated, and a chuck 51h having a block structure in which the chucks 51d and 51f are integrated may be provided (fourth embodiment).

[0085] Fig. 9: is a diagram showing a fourth embodiment of the substrate processing apparatus of the present invention. The fourth embodiment differs greatly from the third embodiment in that, as a chuck for holding the lower surface peripheral portion of the (+X) side of the substrate S, a block having a non-holding region Rn that is recessed downward in the X direction (nozzle travel direction) with a width wider than the width of the nozzle flapper 72 is used as the chuck 51g, 51h. The area other than the non-holding region Rn in the upper surface of these chucks 51g, 51h functions as a holding surface 51s. And, similar to the third embodiment, when the contact action is performed, the non-holding region Rn and the nozzle flapper 72 overlap each other when viewed from above. Therefore, in the contact action, the chuck 51g, 51h and the nozzle flapper 72 are not sandwiched, so that the nozzle flapper 72 can be effectively prevented from crushing the foreign matter FM2.

[0086] In the above-mentioned embodiment, the adsorption and movement control mechanism 52 is equivalent to an example of the "moving part" of the present invention. The nozzle drive mechanism 8 is equivalent to an example of the "lifting part" of the present invention. The chucks 51a to 51h are equivalent to an example of the "holding member" of the present invention, and their combination functions as the "substrate holding part" of the present invention. In particular, the chucks 51b and 51d are equivalent to an example of the "first holding member" of the present invention, and the chucks 51e and 51f are equivalent to an example of the "second holding member" of the present invention. The control unit 9 is equivalent to an example of the "control unit" of the present invention. Steps S6 and S7 are equivalent to an example of the "contact process" of the present invention, and step S9 is equivalent to an example of the "coating process" of the present invention.

[0087] In addition, the present invention is not limited to the above-mentioned embodiment, and various modifications other than the above-mentioned can be made as long as they do not deviate from the main purpose. For example, in the above-mentioned embodiment, the nozzle baffle 72 is made of a non-transparent material that is long and inflexible and longer than the dimension of the substrate S in the Y direction, but a member composed of a plurality of short strip-shaped members arranged in the Y direction may be used as described in Japanese Patent Application Laid-Open No. 2011-212544.

[0088] In the above embodiment, the present invention is applied to a substrate processing apparatus having the slit nozzle 71 as an example of a “nozzle”, but the shape of the nozzle is not limited thereto, and the present invention can be applied to any nozzle to which a nozzle shutter is integrally mounted.

[0089] In addition, in the above-mentioned embodiment, the present invention is applied to the coating device 1 in which the upper position P1 is set above the plumb line of the coating position P2 and the contact position P3, but the setting of the upper position P1 is not limited thereto. For example, the present invention can also be applied to a substrate processing device in which the upper position P1 is set to the (+X) side relative to the coating position P2 and the contact position P3 and descends from the oblique upper direction to the contact position P3.

[0090] In the above embodiment, the chucks 51a, 51b, 51e, 51g on the (+Y) side and the chucks 51c, 51d, 51f, 51h on the (-Y) side are symmetrically arranged with respect to the conveying path of the substrate S, but an asymmetrical structure may be adopted. In addition, the chucks may be arranged only on the (+Y) side or the (-Y) side.

[0091] The present invention can be applied to all substrate processing technologies in which a processing liquid is supplied from a nozzle to a substrate for coating.

Claims

1. A substrate processing device for applying a processing liquid to an upper surface of a substrate, characterized in that: have: A nozzle having a spray outlet; A floating part, spraying gas toward the lower surface of the substrate to float the substrate; a moving portion that moves the substrate relative to the nozzle while holding a portion of the lower surface of the substrate floated by the floating portion using a holding surface of the substrate holding portion; a nozzle baffle plate arranged on the front side of the nozzle in a nozzle travel direction in which the nozzle is moved relative to the substrate by the moving portion, and moving integrally with the nozzle; A lifting part, which enables the nozzle and the nozzle baffle to be lifted and lowered integrally; as well as a control unit that controls the lifting unit to perform a contact action in which the lifting unit lowers the nozzle and the nozzle baffle as a whole and positions the nozzle at a contact position, During the contact action, the holding surface and the nozzle baffle are separated from each other when viewed from above.

2. The substrate processing device according to claim 1, characterized in that: The entire upper surface of the substrate holding portion functions as the holding surface. During the contact operation, the substrate holding portion and the nozzle shutter are separated from each other when viewed from above.

3. The substrate processing device according to claim 1, characterized in that: The substrate holding portion comprises: a first holding member and a second holding member, wherein the entire upper surfaces of the first holding member and the second holding member function as the holding surface; and a non-holding region, wherein the first holding member and the second holding member are separated from each other by an interval wider than the width of the nozzle baffle in the direction of travel of the nozzle, the non-holding region being sandwiched by the first holding member and the second holding member and being recessed downward, During the contact operation, the non-holding region and the nozzle flapper overlap each other when viewed from above.

4. The substrate processing device according to claim 1, characterized in that: The substrate holding portion has a block having a non-holding area that is recessed downward in the direction of travel of the nozzle and is wider than the width of the nozzle baffle, and an area of ​​the upper surface of the block other than the non-holding area functions as the holding surface. During the contact operation, the non-holding region and the nozzle flapper overlap each other when viewed from above.

5. The substrate processing apparatus according to any one of claims 2 to 4, characterized in that: During the contact operation, a separation distance between the holding surface and the nozzle shutter in the nozzle travel direction is equal to or greater than a thickness of the substrate.

6. A substrate processing method, characterized in that: include: a coating step of coating the processing liquid on the upper surface of the substrate by spraying a processing liquid from a spray port of the nozzle while the substrate is relatively conveyed relative to a nozzle positioned at a contact position while a portion of the lower surface of the substrate is held by a holding surface of a substrate holding portion and a gas is sprayed toward the lower surface of the substrate to float the substrate; and a contact step of lowering the nozzle and a nozzle baffle disposed on the front side of the nozzle in a nozzle travel direction in which the nozzle moves relative to the substrate to the contact position in an integrated manner before the coating step; In the contacting step, the nozzle baffle and the holding surface are separated from each other when viewed from above.

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