Mocvd reaction unit and mocvd apparatus

Abstract

The application discloses a MOCVD reaction unit and a MOCVD equipment, which comprises a base and a reaction shell; wherein, one side of the base is provided with a containing cavity, which is suitable for containing a wafer; the reaction shell is arranged on the side of the base provided with the containing cavity, and the reaction shell and the side surface of the base close to the reaction shell enclose a reaction cavity, and the containing cavity is communicated with the reaction cavity; the two ends of the reaction shell are respectively provided with a gas inlet and a gas outlet, which are used for allowing the reaction gas to enter and discharge the reaction cavity; the wafer surface is suitable for contacting the reaction gas in the reaction cavity, and the wafer is vertically arranged in the containing cavity, so that the particle products not adhered to the wafer can slide under the action of gravity, and the accumulation on the wafer is prevented. In the structure, the metal particles generated in the structure do not adhere to the wafer, and fall downward, and cannot be accumulated on the wafer, so that the cleanliness of the wafer surface is ensured, and the subsequent reaction rate and product quality are ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of metal vapor deposition, in particular to a MOCVD reaction unit and a MOCVD equipment. BACKGROUND

[0002] Metal organic chemical vapor deposition is a high-temperature deposition compound semiconductor equipment, that is, a metal organic source is decomposed at high temperature, and these materials are extremely high in requirements for crystal quality, thickness uniformity and composition, so that the MOCVD equipment is relatively high in requirements for temperature uniformity and gas flow uniformity.

[0003] At present, mainstream MOCVD equipment in the market is all multi-wafer machines, some of which are designed to place multiple wafers on a graphite disc through a graphite structure, and the graphite disc rotates at high speed, and the advantage of this structure design is high production capacity, but the temperature of each wafer and the thickness uniformity cannot be adjusted.

[0004] However, the wafers in the existing mainstream MOCVD equipment are horizontally arranged, and in the process of long-time working of the MOCVD equipment, metal particles generated by the reaction inevitably do not adhere to the wafers and accumulate on the surface of the wafers, which affects the reaction rate of subsequent wafers and the quality of the final product. SUMMARY

[0005] Therefore, the technical problem to be solved by the present application is that the wafers in the existing mainstream MOCVD equipment are horizontally arranged, and in the process of long-time working of the MOCVD equipment, metal particles generated by the reaction inevitably do not adhere to the wafers and accumulate on the surface of the wafers, which affects the reaction rate of subsequent wafers and the quality of the final product.

[0006] Therefore, the present application provides a MOCVD reaction unit, which comprises:

[0007] a base, wherein a containing cavity is formed in the base, and the containing cavity is adapted to accommodate a wafer;

[0008] a reaction shell, which is arranged on one side of the base provided with the containing cavity, and a reaction cavity is formed by the reaction shell and the side surface of the base close to the reaction shell, and the containing cavity and the reaction cavity are in communication; and the reaction shell is provided with a gas inlet and a gas outlet at two ends thereof, respectively, so as to allow the reaction gas to enter and discharge the reaction cavity.

[0009] The wafer surface is adapted to contact with the gas to be reacted in the reaction cavity, and the wafer is vertically arranged in the accommodating cavity, so that the granular product not attached to the wafer can slide under the action of gravity, and is prevented from accumulating on the wafer

[0010] Optionally, the gas inlet is arranged at the top of the reaction shell, and the gas outlet is arranged at the bottom of the reaction shell.

[0011] The gas to be reacted enters the reaction cavity from the gas inlet and is discharged from the reaction cavity through the gas outlet, so that the granular product not attached to the wafer can slide under the action of both the gas flow and gravity.

[0012] Optionally, the MOCVD reaction unit further comprises a filtering structure arranged on one side close to the gas outlet, the filtering structure being in communication with the gas outlet, and the filtering structure being adapted to filter and collect the granular product not attached to the wafer discharged from the reaction cavity.

[0013] Optionally, the MOCVD reaction unit further comprises a bearing structure arranged at one end of the accommodating cavity away from the reaction cavity, the bearing structure being adapted to bear the wafer and ensure that the wafer is in a vertical state, and the bearing structure driving the wafer to rotate to ensure that the wafer is uniformly heated.

[0014] Optionally, the bearing structure comprises:

[0015] A wafer carrier, which is vertically arranged, and the wafer is mounted on the wafer carrier.

[0016] A connecting piece, which is horizontally arranged on one side of the wafer carrier away from the reaction cavity, and the axis of the connecting piece penetrates the center of the wafer carrier, one end of the connecting piece is fixedly connected with the wafer carrier, and the other end of the connecting piece is fixedly connected with a driving assembly.

[0017] The driving assembly is fixed in the accommodating cavity, and the output end of the driving assembly is connected with the connecting piece to drive the connecting piece to rotate.

[0018] Optionally, the MOCVD reaction unit further comprises a gas conveying structure, which comprises:

[0019] A gas inlet assembly, which is arranged at the top end of the reaction cavity, and the gas inlet assembly comprises a plurality of gas inlet channels, the gas outlet end of the gas inlet channel corresponds to and is in communication with the gas inlet, and the gas inlet end of the gas inlet channel is adapted to be in communication with a gas inlet device, so that the gas to be reacted flows through the gas inlet channel and the gas inlet from the gas inlet device and enters the reaction cavity.

[0020] An air outlet assembly is arranged at the bottom end of the reaction cavity, and a plurality of air outlet channels are formed in the air outlet assembly, the air inlet ends of the air outlet channels are arranged correspondingly to the air outlets, and the air outlet ends of the air outlet channels are adapted to communicate with the outside to discharge the gas in the reaction cavity.

[0021] Optionally, the air inlet assembly comprises a plurality of air inlet plates, the plurality of air inlet plates are arranged in layers, and the air inlet channels are arranged on the air inlet plates in a single row along the length direction of the air inlet plates.

[0022] The air inlet channels on different air inlet plates respectively introduce different groups of gases,

[0023] and / or the air inlet channels on different air inlet plates introduce the same gas.

[0024] Optionally, the air outlet assembly comprises:

[0025] An air outlet assembly body is arranged on the side of the reaction shell away from the air inlet plates;

[0026] A plurality of first air outlet channels are formed in the top of the air outlet assembly body, the first air outlet channels are arranged correspondingly to the air outlets, and the air inlet ends of the first air outlet channels communicate with the air outlets.

[0027] A second air outlet channel is arranged at the bottom of the air outlet assembly body, the side of the second air outlet channel away from the reaction shell is adapted to communicate with the outside, and the air outlet ends of the plurality of first air outlet channels are connected to the air inlet ends of the second air outlet channel, so that the gas discharged from the reaction cavity moves downward through the plurality of first air outlet channels and converges to the second air outlet channel before being discharged.

[0028] Optionally, the MOCVD reaction unit further comprises a heating structure.

[0029] The heating structure is fixedly arranged on the side of the accommodating cavity away from the reaction cavity, the heating end of the heating structure is arranged opposite to the wafer carrier, the heating end of the heating structure is arranged as a ring-shaped heating wire, and the heating structure is used to provide heat to the wafer carrier.

[0030] A MOCVD device comprises the MOCVD reaction unit, and a plurality of MOCVD reaction units are arranged in an array along the horizontal direction.

[0031] The technical scheme provided by the application has the following advantages:

[0032] 1. The application provides a MOCVD reaction unit, comprising: a base and a reaction shell; wherein one side of the base is provided with a receiving cavity, which is suitable for accommodating a wafer; the reaction shell is arranged on the side of the base provided with the receiving cavity, and the reaction shell and the side of the base close to the reaction shell form a reaction cavity, and the receiving cavity is in communication with the reaction cavity; the two ends of the reaction shell are respectively provided with an air inlet and an air outlet, so as to allow the reaction gas to enter and discharge the reaction cavity; the surface of the wafer is suitable for contacting the reaction gas in the reaction cavity, and the wafer is vertically arranged in the receiving cavity, so that the particle products not attached to the wafer can slide under the action of gravity, preventing accumulation on the wafer.

[0033] The MOCVD reaction unit in the structure comprises a base and a reaction shell, the base is vertically placed as a whole, the receiving cavity is formed in the base, the opening of the receiving cavity faces the side of the base, the reaction shell is arranged to open to one side, and the opening of the reaction shell corresponds to the base, that is, the reaction shell is mounted on the side of the base. After mounting, the reaction shell and the base are sealed by a sealing ring, and the reaction shell and the side of the base jointly form a reaction cavity, and the reaction cavity is in communication with the receiving cavity. A wafer is arranged in the receiving cavity, and the wafer is vertically placed; the two ends of the reaction shell are respectively provided with an air inlet and an air outlet, which can be the two ends of any side, to ensure that the reaction gas can enter the reaction cavity through the air inlet, and the reaction gas can be discharged through the air outlet. The reaction cavity and the receiving cavity are in communication, so that the outer surface of the wafer is exposed in the reaction cavity, so that the reaction gas in the reaction cavity contacts the outer surface of the wafer and reacts and adheres to the wafer. Compared with the horizontal placement of the wafer in the prior art, during the long-term operation of the MOCVD reaction unit, metal particles generated by the reaction inevitably do not adhere to the wafer and accumulate on the surface of the wafer, which affects the reaction rate of the subsequent wafer and the quality of the final product. The wafer in the application is vertically placed, and when the metal particles generated by the reaction do not adhere to the wafer, they will fall downward under the action of gravity and wind pressure, and will not accumulate on the wafer, thereby ensuring the cleanliness of the wafer surface and the reaction rate and product quality.

[0034] 2. The air inlet in the embodiment is arranged at the top of the reaction shell, and the air outlet is arranged at the bottom of the reaction shell; the reaction gas enters the reaction cavity from the air inlet and is discharged from the reaction cavity through the air outlet, so that the particle products not attached to the wafer can slide under the action of airflow and gravity.

[0035] The structure sets the gas inlet at the top of the reaction shell, sets the gas outlet at the bottom of the reaction shell, and makes the gas flow direction of the reaction gas from top to bottom, so that the particle product not attached to the wafer is transferred to the gas outlet end and discharged, and the efficiency of cleaning the particle product is improved.

[0036] 3. The MOCVD reaction unit in the embodiment further comprises a gas delivery structure, which comprises a gas inlet assembly and a gas outlet assembly. The gas inlet assembly is arranged at the top end of the reaction chamber and comprises a plurality of gas inlet channels. The gas outlet end of the gas inlet channel is correspondingly and communicatively arranged with the gas inlet. The gas inlet end of the gas inlet channel is adapted to be in communication with the gas inlet device, so that the reaction gas flows from the gas inlet device through the gas inlet channel and the gas inlet and into the reaction chamber. The gas outlet assembly is arranged at the bottom end of the reaction chamber and comprises a plurality of gas outlet channels. The gas inlet end of the gas outlet channel is correspondingly arranged with the gas outlet. The gas outlet end of the gas outlet channel is adapted to be in communication with the outside to discharge the gas in the reaction chamber.

[0037] The gas delivery structure in the structure comprises a gas inlet assembly and a gas outlet assembly. The gas inlet assembly is arranged above the reaction shell. The gas inlet assembly is provided with independent gas inlet channels. The gas inlet channels are spaced apart along the length direction of the reaction shell. The gas inlet channels are vertically arranged. The gas inlet end of the gas inlet channel is connected with the gas inlet device. The gas inlet device is used for guiding the reaction gas into the gas inlet channel. The gas outlet end of the gas inlet channel is connected with the gas inlet, so that the reaction gas can be introduced into the reaction chamber. The gas outlet assembly is arranged below the reaction chamber. The gas outlet assembly is provided with a plurality of gas outlet channels. The gas outlet channels are also spaced apart along the length direction of the gas outlet assembly. The gas inlet end of the gas outlet channel is in communication with the gas outlet. The gas outlet end of the gas outlet channel is adapted to be connected with the filter structure. The gas in the reaction chamber can be discharged from the gas outlet channel. The gas inlet assembly is arranged at the upper end of the reaction shell, and the gas outlet assembly is arranged at the lower end of the reaction shell, so that the overall gas flow design is from top to bottom along the direction of gravity and the pumping direction. The total gas flow does not need to be too large, and the energy is saved. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the description of the specific embodiments or the prior art. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0039] Figure 1The overall structure schematic diagram of the MOCVD reaction unit provided in the present application;

[0040] Figure 2 The structure schematic diagram of the gas inlet plate provided in the present application;

[0041] Figure 3 The two axial side views of the gas outlet assembly provided in the present application;

[0042] Figure 4 The position relationship schematic diagram of the wafer carrier and the heating wire provided in the present application;

[0043] Figure 5 The internal structure schematic diagram of the MOCVD reaction unit provided in the present application;

[0044] Explanation of reference signs:

[0045] 1 - base;

[0046] 2 - reaction housing;

[0047] 3 - bearing structure; 31 - wafer carrier; 32 - connecting piece; 33 - power assembly;

[0048] 4 - gas delivery structure; 41 - gas inlet assembly; 411 - gas inlet plate; 412 - gas inlet channel; 42 - gas outlet assembly; 421 - gas outlet assembly body; 422 - gas outlet channel; 4221 - first gas outlet channel; 4222 - second gas outlet channel;

[0049] 5 - heating structure. DETAILED DESCRIPTION

[0050] The technical solutions of the present application will be described clearly and completely in combination with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0051] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0052] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "linking" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through intermediate medium, or internal connection of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0053] In addition, the technical features involved in the different embodiments of the application described below can be combined with each other as long as there is no conflict.

[0054] Embodiment 1

[0055] The embodiment provides a MOCVD reaction unit, as shown in the drawings, comprising a base 1 and a reaction shell 2; wherein the base 1 is provided with a receiving cavity on one side, and the receiving cavity is adapted to accommodate a wafer; the reaction shell 2 is arranged on the side of the base 1 provided with the receiving cavity, and the reaction shell 2 and the side surface of the base 1 close to the reaction shell 2 together enclose a reaction cavity, and the receiving cavity and the reaction cavity are in communication; the reaction shell 2 is provided with an air inlet and an air outlet 23 at both ends, respectively, for the reaction gas to enter and discharge the reaction cavity; the wafer surface is adapted to contact the reaction gas in the reaction cavity, and the wafer is vertically arranged in the receiving cavity, so that the particulate product not attached to the wafer can slide down under the action of gravity, preventing accumulation on the wafer. Figures 1 to 5

[0056] The MOCVD reaction unit in this structure comprises a base 1 and a reaction shell 2, the base 1 is vertically placed as a whole, the base 1 is provided with a receiving cavity, and the opening of the receiving cavity faces the side surface of the base 1, the reaction shell 2 is provided with an opening on one side, and the opening of the reaction shell 2 is mounted corresponding to the base 1, that is, the reaction shell 2 is mounted on the side surface of the base 1, after mounting, the reaction shell 2 and the base 1 are sealed by a sealing ring, and the reaction shell 2 and the side surface of the base 1 together enclose a reaction cavity, and the reaction cavity is in communication with the receiving cavity, and a wafer is arranged in the receiving cavity, and the wafer is placed in a vertical state;

[0057] ​The reaction housing 2 is provided with a gas inlet and a gas outlet 23 at two ends, respectively, which can be any two ends of the side, to ensure that the reaction gas can enter the reaction cavity through the gas inlet, and the reaction gas can be discharged from the gas outlet 23, and the reaction cavity and the accommodating cavity are communicated, so that the outer surface of the wafer is exposed in the reaction cavity, so that the reaction gas in the reaction cavity contacts the outer surface of the wafer and reacts and adheres to the wafer; compared with the horizontal placement of the wafer in the prior art, during the long-time operation of the MOCVD reaction unit, metal particles generated by the reaction will inevitably not adhere to the wafer and accumulate on the surface of the wafer, which will affect the reaction rate of the subsequent wafer and the quality of the final product, and the wafer in the present application is vertically placed, when the metal particles generated by the reaction do not adhere to the wafer, under the action of gravity and wind pressure, they will fall downward, and will not accumulate on the wafer, thereby ensuring the cleanliness of the wafer surface and the reaction rate and product quality of the subsequent wafer.

[0058] In the present embodiment, as shown in Figures 1 to 5 ; the gas inlet is arranged at the top of the reaction housing 2, and the gas outlet 23 is arranged at the bottom of the reaction housing 2; the reaction gas enters the reaction cavity from the gas inlet and is discharged from the reaction cavity through the gas outlet 23, so that the particle products that do not adhere to the wafer can slide under the action of the gas flow and gravity.

[0059] This structure sets the gas inlet at the top of the reaction housing 2 and the gas outlet 23 at the bottom of the reaction housing 2, so that the reaction gas enters the reaction cavity from the gas inlet and is discharged from the reaction cavity through the gas outlet 23, so that the gas flow direction of the reaction gas is from top to bottom, and the gas flow transfers the particle products that do not adhere to the wafer to the end of the gas outlet 23 and discharges them, and the gas flow from top to bottom further transfers the particle products, further improving the efficiency of cleaning the particle products and preventing the particle products from remaining in the reaction cavity.

[0060] In the present embodiment, as shown in Figures 1 to 5 ; the MOCVD reaction unit further comprises a filtering structure arranged on one side close to the gas outlet 23, the filtering structure is communicated with the gas outlet 23, and the filtering structure is suitable for filtering and collecting the particle products that do not adhere to the wafer and are discharged from the reaction cavity.

[0061] The MOCVD reaction unit in this structure further comprises a filtering structure, which can be a filter screen, the pore diameter of the filter screen is smaller than the diameter of the particle products, so that the particle products can be blocked and collected, and the end of the filtering structure away from the reaction housing 2 is further connected with a pump body, the pump body is used for pumping the gas in the reaction cavity, since the gas flow is designed to be from top to bottom along the direction of gravity and pump suction force, the total gas flow does not need to be too large, which reduces the working strength of the pump and saves energy.

[0062] In the embodiment, as shown in Figures 1 to 5 The MOCVD reaction unit further comprises a bearing structure 3 arranged at the end of the accommodating cavity away from the reaction cavity, which is adapted to bear the wafer and ensure that the wafer is in a vertical state, and drives the wafer to rotate to ensure that the wafer is uniformly heated. The bearing structure 3 comprises a wafer carrier 31, a connecting piece 32 and a power assembly 33. The wafer carrier 31 is vertically placed, and the wafer is mounted on the wafer carrier 31. The connecting piece 32 is horizontally arranged at the side of the wafer carrier 31 away from the reaction cavity, and the axis of the connecting piece 32 penetrates the center of the wafer carrier 31. One end of the connecting piece 32 is fixedly connected with the wafer carrier 31, and the other end of the connecting piece 32 is fixedly connected with the power assembly 33. The power assembly 33 is fixed in the accommodating cavity, and the output end of the power assembly 33 is connected with the connecting piece 32 to drive the connecting piece 32 to rotate.

[0063] The MOCVD reaction unit in the structure further comprises a bearing structure 3 arranged and fixed at the end of the accommodating cavity away from the reaction shell 2. The bearing structure 3 comprises a wafer carrier 31 arranged in a vertical state at the side of the accommodating cavity close to the reaction cavity. The reaction cavity and the accommodating cavity are connected through a through hole. The wafer is fixed on the side of the wafer carrier 31 facing the reaction cavity. The wafer can be fixed on the wafer carrier 31 in the form of a clamping structure arranged on the wafer carrier 31, or can be installed on the wafer carrier 31 in other ways. The connecting piece 32 is horizontally placed, i.e. the axis of the connecting piece 32 is in a horizontal direction. The connecting piece 32 can be a sleeve-shaped rotary body. The power assembly 33 is also fixed in the accommodating cavity and can be a rotary motor. One end of the connecting piece 32 is fixedly connected with the wafer carrier 31, and the other end of the connecting piece 32 is connected with the output end of the power assembly 33. The power assembly 33 drives the connecting piece 32 to rotate, thereby driving the wafer carrier and the wafer to rotate, so that the reaction on the surface of the wafer is uniform, and the yield of wafer production is increased.

[0064] In the embodiment, as shown in Figures 1 to 5 The MOCVD reaction unit further comprises a gas delivery structure 4 comprising an air inlet assembly 41 and an air outlet assembly 42. The air inlet assembly 41 is arranged at the top end of the reaction cavity. The air inlet assembly 41 comprises a plurality of air inlet channels 412 each having an air inlet end and an air outlet end. The air outlet end of each air inlet channel 412 is correspondingly and communicatively arranged with an air inlet port. The air inlet end of each air inlet channel 412 is adapted to be connected with an air inlet device, so that the reaction gas flows from the air inlet device through the air inlet channel 412 and the air inlet port and into the reaction cavity. The air outlet assembly 42 is arranged at the bottom end of the reaction cavity. The air outlet assembly 42 comprises a plurality of air outlet channels 422 each having an air inlet end and an air outlet end. The air inlet end of each air outlet channel 422 is correspondingly arranged with an air outlet port 23. The air outlet end of each air outlet channel 422 is adapted to be connected with the outside to discharge the gas in the reaction cavity.

[0065] The gas delivery structure 4 in this structure includes an inlet assembly 41 and an outlet assembly 42. The inlet assembly 41 is located above the reaction shell 2. Each inlet assembly 41 has an independent inlet channel 412. Several inlet channels 412 are spaced apart along the length of the reaction shell 2. The inlet channels 412 are vertically opened. The inlet end of the inlet channel 412 is connected to the inlet device. The inlet device is used to introduce the gas to be reacted into the inlet channel 412. The outlet end of the inlet channel 412 is connected to the inlet port, so that the gas to be reacted can be introduced into the reaction chamber.

[0066] The gas outlet assembly 42 is located below the reaction chamber. The gas outlet assembly 42 has multiple gas outlet channels 422, which are also spaced along the length of the gas outlet assembly 42. The inlet end of the gas outlet channel 422 is connected to the outlet 23, and the outlet end of the gas outlet channel 422 is suitable for connection to the filter structure. The gas in the reaction chamber can be discharged from the gas outlet channel 422. By setting the inlet assembly 41 at the upper end of the reaction shell 2 and the gas outlet assembly 42 at the lower end of the reaction shell 2, the overall gas flow design is ensured to be from top to bottom, in the direction of gravity and pump suction. The total airflow does not need to be too large, thus saving energy.

[0067] In this implementation, such as Figures 1 to 5 As shown, the intake assembly 41 includes several layers of intake plates 411, which are stacked together. Intake channels 412 are arranged in a single row at intervals along the length of the intake plates 411. The intake channels 412 on different intake plates 411 can be used to supply different types of gases. The intake channels 412 on different intake plates 411 can supply the same gas. Some intake channels 412 on some intake plates 411 can be used to supply different types of gases, and some intake channels 412 on some intake plates 411 can supply the same gas.

[0068] The air intake assembly 41 in this structure includes several layers of air intake plates 411, which are stacked together. Air intake channels 412 are arranged in a single row along the length of the air intake plates 411. Each layer of air intake plate 411 has multiple air intake channels 412, which are spaced apart along the length of the air intake plate 411 to ensure that the air intake channels 412 correspond to the air intake ports.

[0069] The optimal number of layers for the air intake plate 411 is three. When the gas to be reacted is introduced, the upper and lower sides are introduced with V / VI gas sources through different air intake channels 412, and the middle layer is introduced with gas of II / III origin through the air intake channel 412. This avoids interference between different gases during the transportation process, which would ultimately affect the gas phase reaction in the reaction chamber.

[0070] In the present embodiment, as shown in Figures 1 to 5 The air outlet assembly 42 comprises an air outlet assembly body 421, a first air outlet passage 4221 and a second air outlet passage 4222. The air outlet assembly body 421 is arranged on the side of the reaction chamber 2 away from the air inlet plate 411. The first air outlet passage 4221 is arranged on the top of the air outlet assembly body 421. The first air outlet passage 4221 is provided with a plurality of first air outlet passages 4221, and the first air outlet passage 4221 is arranged in one-to-one correspondence with the air outlet 23. The air inlet end of the first air outlet passage 4221 is in communication with the air outlet 23. The second air outlet passage 4222 is arranged on the bottom of the air outlet assembly body 421. The side of the second air outlet passage 4222 away from the reaction chamber 2 is adapted to be in communication with the outside. The air outlet ends of the plurality of first air outlet passages 4221 are connected to the air inlet end of the second air outlet passage 4222, so that the gas discharged from the reaction cavity moves downward through the plurality of first air outlet passages 4221 and converges into the second air outlet passage 4222 before being discharged.

[0071] The air outlet assembly 42 in this structure comprises an air outlet assembly body 421 arranged in a block or plate structure. The air outlet assembly body 421 is arranged on the side of the air outlet 23 of the reaction chamber 2 and is mounted on the base 1. The air outlet assembly body 421 is attached to the reaction chamber 2 and is sealed therefrom by a sealing ring. The air outlet assembly body 421 comprises a first air outlet passage 4221 and a second air outlet passage 4222. The first air outlet passage 4221 is arranged on the side of the air outlet assembly body 421 close to the air outlet 23 and is arranged at intervals along the length direction of the reaction chamber 2. One end of the first air outlet passage 4221 is arranged opposite to the air outlet 23, and the other end of the first air outlet passage 4221 is connected to the second air outlet passage 4222. The first air outlet passage 4221 is provided with a plurality of first air outlet passages 4221. The air outlet ends of the plurality of first air outlet passages 4221 are in communication with the air inlet end of the second air outlet passage 4222. The air outlet end of the second air outlet passage 4222 is connected to an external space. The air outlet end of the second air outlet passage 4222 is additionally connected to a filter. The filter is used to filter the impurities brought out from the reaction cavity. The other end of the filter is connected to an air pump. The air pump is used to drive the gas flow in the metal chemical vapor deposition device, thereby increasing the flow rate.

[0072] The second gas outlet channel 4222 in the structure is provided with one, and the first gas outlet channel 4221 is provided with a number greater than or equal to fifty. The gas outlet end of the plurality of first gas outlet channels 4221 is connected to the gas inlet end of the second gas outlet channel 4222, so that the plurality of first gas outlet channels 4221 enter a second gas outlet channel 4222, thereby facilitating subsequent gas treatment, for example, only one filter needs to be placed at the gas outlet end of the second gas outlet channel 4222, which is convenient for construction and avoids waste of mechanical efficiency; the inner diameter of the second gas outlet channel 4222 is greater than the inner diameter of the first gas outlet channel 4221, on the one hand, the gas in the first gas outlet channel 4221 can enter the second gas outlet channel 4222 more smoothly, on the other hand, the second gas outlet channel 4222 can accommodate more gas, so that the gas flows smoothly in the second gas outlet channel 4222, preventing the situation where the gas cannot be smoothly discharged and the internal pressure increases, preventing the risk of cylinder explosion.

[0073] In the embodiment, as shown in Figures 1 to 5 The MOCVD reaction unit in the structure further includes a heating structure 5; the heating structure 5 is fixedly arranged on the side of the accommodating cavity away from the reaction cavity, the heating end of the heating structure 5 is arranged opposite to the wafer carrier 31, and the heating end of the heating structure 5 is arranged as a ring-shaped heating wire; the heating structure 5 is used to provide heat to the wafer carrier 31.

[0074] The MOCVD reaction unit in the structure further includes a heating structure 5; the heating structure 5 is fixedly arranged on the side of the accommodating cavity away from the reaction cavity, the heating end of the heating structure 5 is arranged opposite to the wafer carrier 31, and the heating end of the heating structure 5 is arranged as a ring-shaped heating wire; the heating structure 5 is used to provide heat to the wafer carrier 31.

[0075] Embodiment 2

[0076] The embodiment provides a MOCVD device, which includes a plurality of MOCVD reaction units in the embodiment 1, and the plurality of MOCVD reaction units are arranged in an array along a horizontal direction.

[0077] The structure sets a MOCVD device, which includes a plurality of MOCVD reaction units in the embodiment 1, so it has all the beneficial effects of the MOCVD reaction unit in the embodiment 1; the plurality of MOCVD reaction units are arranged in an array along a horizontal direction, and adjacent MOCVD reaction units can be closely arranged or spaced apart, so that the production efficiency can be improved.

[0078] Obviously, the above embodiments are merely example for clearly illustrating but not limitation to the embodiments. Based on the above description, other different forms of changes or variations can be made by those skilled in the art. Here, all the embodiments need not and can not be enumerated. The obvious changes or variations derived from the above description are still within the protection scope of the present application.

Claims

1. A MOCVD reaction unit, characterized in that, The utility model relates to a MOCVD reaction unit, which comprises: a base (1) having a receiving cavity for accommodating a wafer; a reaction shell (2) disposed on the side of the base (1) provided with the receiving cavity, the reaction shell (2) and the side of the base (1) close to the reaction shell (2) form a reaction cavity, and the receiving cavity and the reaction cavity are in communication; the reaction shell (2) is provided with an air inlet and an air outlet at two ends thereof for allowing the reaction gas to enter and discharge the reaction cavity; wherein the wafer surface is adapted to contact the reaction gas in the reaction cavity, and the wafer is vertically arranged in the receiving cavity so that the particulate product not attached to the wafer can slide under the action of gravity to prevent accumulation on the wafer; the MOCVD reaction unit further comprises a gas delivery structure (4), which comprises: an air inlet assembly (41) disposed at the top end of the reaction cavity, the air inlet assembly (41) comprising a plurality of air inlet channels (412) formed therein, the air outlet end of the air inlet channel (412) corresponding to and in communication with the air inlet, and the air inlet end of the air inlet channel (412) being adapted to communicate with an air inlet device so that the reaction gas flows from the air inlet device through the air inlet channel (412) and the air inlet and into the reaction cavity; an air outlet assembly (42) disposed at the bottom end of the reaction cavity, the air outlet assembly (42) comprising a plurality of air outlet channels (422) formed therein, the air inlet end of the air outlet channel (422) corresponding to and in communication with the air outlet, and the air outlet end of the air outlet channel (422) being adapted to communicate with the outside to discharge the gas in the reaction cavity; the air inlet assembly (41) comprises a plurality of air inlet plates (411), and the plurality of air inlet plates (411) are stacked, the air inlet channels (412) being arranged on the air inlet plates (411) in a single row along the length direction of the air inlet plates (411); wherein the air inlet channels (412) on different air inlet plates (411) respectively introduce different groups of gases, and / or the air inlet channels (412) on different air inlet plates (411) introduce the same gas; the air outlet assembly (42) comprises: an air outlet assembly body (421) disposed on the side of the reaction shell (2) away from the air inlet plates (411); a plurality of first air outlet channels (4221) formed at the top of the air outlet assembly body (421), the first air outlet channels (4221) corresponding to the air outlets one by one, and the air inlet end of the first air outlet channels (4221) being in communication with the air outlets. A second gas outlet channel (4222) is arranged at the bottom of the gas outlet assembly body (421), and the second gas outlet channel (4222) is adapted to communicate with the outside from the side of the reaction shell (2). The gas outlet ends of the first gas outlet channels (4221) are connected to the gas inlet end of the second gas outlet channel (4222), so that the gas discharged from the reaction cavity moves downward through the first gas outlet channels (4221) and is discharged through the second gas outlet channel (4222).

2. The MOCVD reaction cell of claim 1, wherein, The gas inlet is arranged at the top of the reaction shell (2), and the gas outlet is arranged at the bottom of the reaction shell (2). The reaction gas enters the reaction cavity through the gas inlet and is discharged from the reaction cavity through the gas outlet, so that the particulate product not attached to the wafer can slide under the action of the gas flow and gravity.

3. The MOCVD reaction cell of claim 2, wherein, The MOCVD reaction unit further comprises a filtering structure arranged on the side close to the gas outlet, which communicates with the gas outlet and is adapted to filter and collect the particulate product not attached to the wafer discharged from the reaction cavity.

4. The MOCVD reaction cell of claim 3, wherein, The MOCVD reaction unit further comprises a bearing structure (3) arranged at the end of the accommodating cavity away from the reaction cavity, which is adapted to bear the wafer and ensure that the wafer is in a vertical state, and drives the wafer to rotate to ensure that the wafer is uniformly heated.

5. The MOCVD reaction unit according to claim 4, characterized in that, The bearing structure (3) comprises: a wafer carrier (31) arranged vertically, on which the wafer is mounted; a connecting piece (32) horizontally arranged on the side of the wafer carrier (31) away from the reaction cavity, and the axis of the connecting piece (32) penetrates the center of the wafer carrier (31), one end of the connecting piece (32) is fixedly connected with the wafer carrier (31), and the other end of the connecting piece (32) is fixedly connected with a power assembly (33) fixed in the accommodating cavity, and the output end of the power assembly (33) is connected with the connecting piece (32) to drive the connecting piece (32) to rotate.

6. The MOCVD reaction cell of claim 5, wherein, The MOCVD reaction unit further comprises a heating structure (5); The heating structure (5) is fixedly arranged on the side of the accommodating cavity away from the reaction cavity, the heating end of the heating structure (5) is arranged opposite to the wafer carrier (31), the heating end of the heating structure (5) is arranged as a ring-shaped heating wire, and the heating structure (5) is used for providing heat to the wafer carrier (31).

7. A MOCVD apparatus, characterized by, A plurality of MOCVD reaction units according to any one of claims 1-6 are arranged in an array along the horizontal direction.

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