Method for processing ultra-thin hot-pressed silicon carbide ring for semiconductor rapid annealing furnace

Abstract

The application discloses a kind of ultra-thin hot-pressed silicon carbide ring processing methods for semiconductor rapid annealing furnace, to solve the risk of product fracture in the process of hot-pressed silicon carbide ring processing.The application is positioned by mounting groove on jig in the process of hot-pressed silicon carbide ring processing, positioning is reliable, effectively prevent product deviation, and solid rod wax can fill the clamping gap between the outer wall of hot-pressed silicon carbide ring blank and the side wall of mounting groove, and it can also be better removed in the subsequent product dewaxing process, without residue, to avoid the fracture of taking.Using 650 DEG C sintering curve can remove organic matter, prevent product oxidation, avoid the fracture of ultra-thin inner section caused by manual wiping, and achieve non-contact surface cleaning.Hot-pressed silicon carbide ring blank is vertically entered into water, to avoid product crack and fracture caused by water resistance due to horizontal entry of product.

Description

TECHNICAL FIELD

[0001] The application relates to a semiconductor product processing technology, in particular to a processing method of an ultra-thin hot-pressed silicon carbide ring for a semiconductor rapid annealing furnace. BACKGROUND

[0002] At present, a high-purity hot-pressed silicon carbide ring product used in a rapid annealing furnace RTP device is processed in the office. The product is applied to a high-process semiconductor rapid annealing furnace and plays a role in supporting a silicon wafer. The silicon wafer needs to be rapidly heated to 300-1200 DEG C in the rapid annealing furnace. The hot-pressed silicon carbide ring in the rapid annealing furnace is particularly important and needs to have excellent heat shock resistance. The hardness of the hot-pressed silicon carbide is greater than that of ordinary silicon carbide, and the material hardness is 26Gpa, which is 4Gpa higher than that of ordinary silicon carbide. Moreover, the wall thickness of the thinnest inner diameter section of the high-purity hot-pressed silicon carbide ring is only 0.21mm, the product structure has two ring grooves, and the thickness of the side wall is only 0.7mm. The structure is relatively complex, and the processing difficulty is very high. The product has a great risk of breakage during processing. Moreover, after processing, the product needs to ensure that the surface organic matter residual particles are less than 0.2ug / cm2 and the number is less than or equal to 100000, and the surface cleanliness requirement is high. The existing processing technology is difficult to realize reliable processing of the product, and there is a risk of product breakage during processing. SUMMARY

[0003] In order to overcome the above-mentioned defects, the application provides a processing method of an ultra-thin hot-pressed silicon carbide ring for a semiconductor rapid annealing furnace, which can realize reliable processing of the hot-pressed silicon carbide ring and is not prone to breakage risk during processing.

[0004] In order to solve the above technical problems, the application adopts the following technical scheme: a processing method of an ultra-thin hot-pressed silicon carbide ring for a semiconductor rapid annealing furnace, comprising the following steps:

[0005] S1, loading a hot-pressed silicon carbide ring blank to a jig, the jig is provided with a mounting groove, and the hot-pressed silicon carbide ring blank is adapted to be mounted in the mounting groove;

[0006] S2, using a vertical grinding machine to remove the inner section difference allowance of one side of the hot-pressed silicon carbide ring blank to form an annular missing groove on the hot-pressed silicon carbide ring blank, and the moving path of the grinding head of the vertical grinding machine is inclined inward from top to bottom;

[0007] S3, taking down the hot-pressed silicon carbide ring blank, loading a supporting ring in the mounting groove, and continuing to mount the hot-pressed silicon carbide ring blank in the mounting groove after turning over, at this time, the annular missing groove is adapted to be supported on the supporting ring;

[0008] S4, using a vertical lathe to process the inner section difference allowance of the other side of the hot-pressed silicon carbide ring blank in a radial direction to form an ultra-thin inner section difference on the inner side of the hot-pressed silicon carbide ring blank;

[0009] S5, remove the hot-pressed silicon carbide ring blank and disassemble the support ring. Turn the hot-pressed silicon carbide ring blank over and install it into the mounting groove.

[0010] S6. A grooving tool is used to machine a ring groove on the surface of a hot-pressed silicon carbide ring blank. Several protruding grinding edges are evenly distributed on the grooving tool, and the grinding edges are adapted to the ring groove.

[0011] S7, place the hot-pressed silicon carbide ring blank into the sintering furnace for sintering at 650℃;

[0012] S8, the cooled hot-pressed silicon carbide ring blank is loaded onto the cleaning fixture and placed in the oxidation cleaning tank for cleaning. The hot-pressed silicon carbide ring blank is vertically immersed in water.

[0013] S9, after being removed, completes the hot-pressed silicon carbide ring processing;

[0014] Solid rod wax is used for bonding between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove in S1, S3, and S5.

[0015] In the hot-pressed silicon carbide ring processing, the hot-pressed silicon carbide ring blank is positioned reliably using the mounting groove on the fixture. However, existing technology directly uses solid wax to bond the hot-pressed silicon carbide ring blank to the fixture. Because the hot-pressed silicon carbide ring has high hardness, the grinding process generates localized high temperatures of 50°C, causing the wax to soften and fail during clamping. This leads to product displacement and breakage during grinding. Therefore, the mounting groove on the fixture more effectively prevents product displacement. Furthermore, the solid wax rod fills the clamping gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove, allowing for easier removal without residue during subsequent dewaxing and preventing breakage during handling.

[0016] In the S2 vertical grinding machine, the roughing inner diameter path is an inclined path, and the cutting method is vertical, which reduces the product from being subjected to large radial forces that could cause product displacement. In the S3, the annular notch adapter support is mounted on the support ring, which can prevent the inner step from breaking during the S4 process.

[0017] The S6 uses a grooving tool to machine ring grooves. The ring groove can be machined by cutting downwards in Z, which greatly improves the machining efficiency and avoids the product cracking and scrap caused by burning, runout and other problems that occurred when machining with small diameter tools in the machining center.

[0018] The volatilization temperature of solid rod wax is around 560℃, and the oxidation temperature of hot-pressed silicon carbide rings is around 700℃. Therefore, the S7 uses a sintering curve of 650℃, which can remove organic matter and prevent product oxidation, avoid ultra-thin internal step breakage caused by manual wiping, and achieve non-contact surface cleanliness.

[0019] In S8, the hot-pressed silicon carbide ring blank is vertically immersed in water to avoid cracks and breaks caused by water resistance when the product is immersed horizontally.

[0020] The processing method of this patent can reliably process hot-pressed silicon carbide rings, and the risk of breakage during the processing is not high.

[0021] Preferably, the fixture includes a base and a positioning ring, the positioning ring being mounted on the surface of the base to form a mounting groove, and a plurality of radial locking pins being installed between the positioning ring and the base.

[0022] The mounting groove is formed by the positioning ring mounted on the base surface, facilitating the removal of the hot-pressed silicon carbide ring. A locking pin reliably positions the positioning ring, preventing it from shifting.

[0023] Preferably, the gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove is 0.01-0.02 mm.

[0024] The gap size is set reasonably to avoid the hot-pressed silicon carbide ring shifting due to an excessively large gap; at the same time, it avoids the hot-pressed silicon carbide ring being inconvenient to install and remove due to an excessively small gap.

[0025] Preferably, the two ends of the grinding cutting edge are inclined off the radial direction, and a chip removal groove is formed between two adjacent grinding cutting edges.

[0026] The inclined end face of the grinding tool causes the chip removal groove to deviate from the radial inclination, which is conducive to the rapid discharge of grinding fluid.

[0027] Preferably, the cleaning fixture includes two upright plates, with several baffles installed between the two upright plates, and all the baffles together forming a support groove with an open top; in S8, the hot-pressed silicon carbide ring blank is loaded into the support groove.

[0028] During the cleaning process, the hot-pressed silicon carbide ring blank is loaded into the support groove, which helps to support the hot-pressed silicon carbide ring blank stably, keeping the hot-pressed silicon carbide ring blank in an upright state and avoiding breakage due to lateral impact.

[0029] Preferably, the stop bar is provided with several slots at intervals, and the edge of the hot-pressed silicon carbide ring blank is placed in the slots.

[0030] The slot facilitates the stable clamping of the hot-pressed silicon carbide ring blank.

[0031] Preferably, the upright plate includes a fixed part and a lifting part, the lifting part is movably mounted on the fixed part, the stop bar is mounted on the fixed part, and the opening end of the support groove is close to the upper end of the fixed part.

[0032] During S8, when the hot-pressed silicon carbide ring blank is loaded into the support groove, the lifting part is in the lowest position. At this time, the height of the vertical plate is low, and the opening end of the support groove is close to the upper part of the vertical plate. The hot-pressed silicon carbide ring blank is not likely to touch the vertical plate and break. After the hot-pressed silicon carbide ring blank is loaded, the lifting part is raised to hide the hot-pressed silicon carbide ring blank between the two vertical plates. At this time, the lifting part can protect the hot-pressed silicon carbide ring blank. The cleaning fixture is transferred to the oxidation cleaning tank through the lifting part. The hot-pressed silicon carbide ring blank will not be touched during the transfer process.

[0033] Preferably, several positioning blocks are installed on the stop bar, and the gap between two adjacent positioning blocks forms a slot. A clamping block is installed on one side wall of the slot. The stop bar has a tubular structure, and a push rod that can move axially is inserted inside the stop bar. All clamping blocks are connected to the push rod. In S8, after the hot-pressed silicon carbide ring blank is loaded into the support groove, the push rod moves axially to make the clamping block fit and clamp the hot-pressed silicon carbide ring blank.

[0034] The width of the slot is greater than the thickness of the hot-pressed silicon carbide ring blank, which facilitates the loading of the hot-pressed silicon carbide ring blank into the slot. After the hot-pressed silicon carbide ring blank is loaded into place, the clamping block is pushed and clamped onto the hot-pressed silicon carbide ring blank, achieving reliable clamping and preventing the hot-pressed silicon carbide ring blank from shaking during transfer, water immersion, and washing. This provides a good positioning and protection function for the hot-pressed silicon carbide ring blank.

[0035] Preferably, a positioning spring is installed inside the stop bar, and the positioning spring abuts against the push rod. A top ring that can move axially is installed on a vertical plate, and the ends of all push rods abut against the top ring.

[0036] The axial movement of the top ring enables the synchronous axial movement of all push rods, thereby enabling all clamping blocks to clamp the hot-pressed silicon carbide ring blank synchronously. This ensures uniform force distribution during the clamping process of the hot-pressed silicon carbide ring blank and avoids breakage caused by uneven force distribution.

[0037] Preferably, a buffer pad is provided at the bottom of the card slot, and the buffer pad and the positioning block are integrated into one structure.

[0038] The edges of the hot-pressed silicon carbide ring blank rest against the buffer pad, which protects the hot-pressed silicon carbide ring blank.

[0039] Compared with the prior art, the beneficial effects of the present invention are: (1) During the hot-pressed silicon carbide ring processing, the hot-pressed silicon carbide ring blank is positioned by the mounting groove on the fixture, which effectively prevents the product from shifting. The solid rod wax can fill the clamping gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove, and can be better removed in the subsequent product dewaxing process without residue, avoiding breakage during handling; (2) The roughing inner diameter path of the vertical grinder is a slope path and the cutting method is vertical cutting, which can reduce the product from being subjected to large radial forces that cause product shifting; (3) The sintering curve at 650℃ can remove organic matter and prevent the product from oxidizing, avoiding the ultra-thin inner step fracture caused by manual wiping, achieving non-contact surface cleanliness; (4) The hot-pressed silicon carbide ring blank is vertically immersed in water, avoiding product cracks and breakage caused by water resistance due to the product being horizontally immersed in water; (5) The hot-pressed silicon carbide ring blank is loaded into During the support groove process, the lifting part is placed at the lowest position. At this time, the height of the vertical plate is low and the opening end of the support groove is close to the upper end of the vertical plate. The hot-pressed silicon carbide ring blank is not easy to touch the vertical plate and break. After the hot-pressed silicon carbide ring blank is loaded, the lifting part is raised to hide the hot-pressed silicon carbide ring blank between the two vertical plates. At this time, the lifting part can protect the hot-pressed silicon carbide ring blank. The cleaning fixture is transferred to the oxidation cleaning tank through the lifting part. The hot-pressed silicon carbide ring blank will not be touched during the transfer process. (6) After the hot-pressed silicon carbide ring blank is loaded into place, the clamping block is pushed and clamped onto the hot-pressed silicon carbide ring blank to achieve reliable clamping and avoid the hot-pressed silicon carbide ring blank from shaking during the transfer, water entry and cleaning process. This provides a good positioning and protection effect for the hot-pressed silicon carbide ring blank. (7) All clamping blocks clamp the hot-pressed silicon carbide ring blank synchronously to ensure that the hot-pressed silicon carbide ring blank is subjected to uniform force during the clamping process and avoids breakage caused by uneven force. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of the hot-pressed silicon carbide ring blank being loaded onto the fixture according to the present invention;

[0041] Figure 2 This is a schematic diagram of the fixture clamping of S2 in this invention;

[0042] Figure 3 This is a schematic diagram of the fixture clamping of S4 of the present invention;

[0043] Figure 4 This is a schematic diagram of the fixture clamping of S6 of the present invention;

[0044] Figure 5 This is a structural diagram of the grooving tool of the present invention;

[0045] Figure 6 This is a structural diagram of the cleaning fixture according to Embodiment 1 of the present invention;

[0046] Figure 7This is a cross-sectional view of the cleaning fixture of Embodiment 2 of the present invention;

[0047] Figure 8 This is a cross-sectional view of the stop bar according to Embodiment 2 of the present invention;

[0048] In the diagram: 1. Hot-pressed silicon carbide ring blank; 2. Mounting groove; 3. Base; 4. Positioning ring; 5. Radial locking pin; 6. Annular notch; 7. Support ring; 8. Inner step; 9. Grooving tool; 10. Annular groove; 11. Grinding blade; 12. Chip removal groove; 13. Vertical plate; 14. Stop bar; 15. Slot; 16. Flow groove; 17. Lifting head; 18. Fixing part; 19. Lifting part; 20. Positioning block; 21. Clamping block; 22. Push rod; 23. Positioning spring; 24. Top ring; 25. Screw sleeve; 26. Buffer pad; 27. Groove; 28. Rib; 29. ​​Clearance groove. Detailed Implementation

[0049] The technical solution of the present invention will be further described in detail below through specific embodiments and in conjunction with the accompanying drawings:

[0050] Example 1: A method for processing ultra-thin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces, comprising the following steps:

[0051] S1, the hot-pressed silicon carbide ring blank 1 is loaded onto the fixture, which has a mounting groove 2, and the hot-pressed silicon carbide ring blank is fitted into the mounting groove; the fixture includes a base 3 and a positioning ring 4 (see Appendix). Figure 1 The positioning ring is installed on the surface of the base to form a mounting groove. Several radial locking pins 5 are installed between the positioning ring and the base. The radial locking pins are detachably inserted between the positioning ring and the base.

[0052] S2, using a vertical grinding machine to remove the inner section allowance on one side of the hot-pressed silicon carbide ring blank, forming an annular notch 6 on the hot-pressed silicon carbide ring blank (see Appendix). Figure 2 The grinding head of the vertical grinding machine moves along an inward and downward path at an angle of 45 degrees.

[0053] S3, remove the hot-pressed silicon carbide ring blank and load the support ring 7 into the mounting groove. The support ring is bonded to the base by fixing rod wax. After the hot-pressed silicon carbide ring blank is flipped over, it is continued to be installed into the mounting groove. At this time, the annular notch fits and supports the support ring.

[0054] S4, using a vertical lathe with radial feed, the inner step allowance on the other side of the hot-pressed silicon carbide ring blank is machined, thereby forming an ultra-thin inner step 8 on the inner side of the hot-pressed silicon carbide ring blank (see Appendix). Figure 3 The inner step thickness is 0.21 mm;

[0055] S5, remove the hot-pressed silicon carbide ring blank and disassemble the support ring. Turn the hot-pressed silicon carbide ring blank over and install it into the mounting groove.

[0056] S6. Using the grooving tool 9, machine the annular groove 10 on the surface of the hot-pressed silicon carbide ring blank (see Appendix). Figure 4 The grooving tool is provided with several protruding grinding edges 11 evenly distributed (see appendix). Figure 5 The grinding blade is adapted to the ring groove; the two ends of the grinding blade are offset from the radial direction and inclined, and a chip removal groove 12 is formed between two adjacent grinding blades; the surface of the hot-pressed silicon carbide ring blank needs to be ground with two concentric ring grooves of different sizes. Two grooving tools of different sizes are used to process them in sequence. First, the ring groove with a larger diameter is processed, and then the ring groove with a smaller diameter is processed.

[0057] S7, place the hot-pressed silicon carbide ring blank into the sintering furnace for sintering at 650℃;

[0058] S8, the cooled hot-pressed silicon carbide ring blank is loaded onto the cleaning fixture and placed in the oxidation cleaning tank for cleaning. The hot-pressed silicon carbide ring blank is vertically immersed in water; the cleaning fixture includes two vertical plates 13 (see Appendix). Figure 6 Several baffles 14 are installed between the two uprights, and all the baffles together form a support groove with an open top. In S8, the hot-pressed silicon carbide ring blank is loaded into the support groove. In this embodiment, two pairs of baffles are set, one above the other, and the distance between the lower pair of baffles is smaller than the distance between the upper pair of baffles. The lower part of the hot-pressed silicon carbide ring blank is supported on the two lower baffles, and the two sides of the hot-pressed silicon carbide ring blank are respectively abutted against the two upper baffles. Several slots 15 are set at intervals on the baffles, and the edge of the hot-pressed silicon carbide ring blank is placed in the slots. Flow grooves 16 are set on the uprights and the support groove respectively. A lifting head 17 is set at the upper end of the uprights, and the entire cleaning fixture is lifted and transported by the lifting head.

[0059] S9, after being removed, completes the hot-pressed silicon carbide ring processing;

[0060] In steps S1, S3, and S5, solid wax is used to bond the outer wall of the hot-pressed silicon carbide ring blank to the side wall of the mounting groove. The gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove is 0.01-0.02 mm. Before loading the hot-pressed silicon carbide ring blank into the mounting groove, solid wax is applied to the side wall of the mounting groove. The fixture is heated to melt the solid wax. Then, the hot-pressed silicon carbide ring blank is loaded into the mounting groove. The molten solid wax fills the gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove. After cooling, the solid wax bonds the outer wall of the hot-pressed silicon carbide ring blank to the side wall of the mounting groove.

[0061] In the hot-pressed silicon carbide ring processing, the hot-pressed silicon carbide ring blank is positioned reliably using the mounting groove on the fixture. However, existing technology directly uses solid wax to bond the hot-pressed silicon carbide ring blank to the fixture. Because the hot-pressed silicon carbide ring has high hardness, the grinding process generates localized high temperatures of 50°C, causing the wax to soften and fail during clamping. This leads to product displacement and breakage during grinding. Therefore, the mounting groove on the fixture more effectively prevents product displacement. Furthermore, the solid wax rod fills the clamping gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove, allowing for easier removal without residue during subsequent dewaxing and preventing breakage during handling.

[0062] In the S2 vertical grinding machine, the roughing inner diameter path is an inclined path, and the cutting method is vertical, which reduces the product from being subjected to large radial forces that could cause product displacement. In the S3, the annular notch adapter support is mounted on the support ring, which can prevent the inner step from breaking during the S4 process.

[0063] The S6 uses a grooving tool to machine ring grooves. The ring groove can be machined by cutting downwards in Z, which greatly improves the machining efficiency and avoids the product cracking and scrap caused by burning, runout and other problems that occurred when machining with small diameter tools in the machining center.

[0064] The volatilization temperature of solid rod wax is around 560℃, and the oxidation temperature of hot-pressed silicon carbide rings is around 700℃. Therefore, the S7 uses a sintering curve of 650℃, which can remove organic matter and prevent product oxidation, avoid ultra-thin internal step breakage caused by manual wiping, and achieve non-contact surface cleanliness.

[0065] In S8, the hot-pressed silicon carbide ring blank is vertically immersed in water to avoid cracks and breaks caused by water resistance when the product is immersed horizontally.

[0066] The processing method of this patent can reliably process hot-pressed silicon carbide rings, and the risk of breakage during the processing is not high.

[0067] Example 2: A method for processing an ultra-thin hot-pressed silicon carbide ring for a semiconductor rapid annealing furnace. The steps are similar to those in Example 1, with the main difference being that the vertical plate in this example includes a fixing part 18 and a lifting part 19 (see Appendix). Figure 7 The lifting part is movably mounted on the fixed part, and the stop bar is mounted on the fixed part. The opening end of the support groove is close to the upper end of the fixed part. Slide grooves are provided on both sides of the fixed part, and extension rods are provided on both sides of the lifting part. Sliding blocks are provided at the ends of the extension rods and are slidably mounted in the slide grooves. Several positioning blocks 20 are mounted on the stop bar (see appendix). Figure 8The gap between two adjacent positioning blocks forms a slot, and a clamping block 21 is installed on one side wall of the slot. The stop rod has a tubular structure, and a push rod 22 that can move axially is inserted into the stop rod. All clamping blocks are connected to the push rod. A positioning spring 23 is installed in the stop rod, and the positioning spring abuts against the push rod. A top ring 24 that can move axially is installed on a vertical plate. A screw sleeve 25 is set on the vertical plate and the top ring, and the top ring and the screw sleeve are threadedly connected. The ends of all push rods abut against the top ring. A buffer pad 26 is set at the bottom of the slot. The buffer pad is an integral structure with the positioning block. The buffer pad is set towards the hot-pressed silicon carbide ring. The clamping block is set in the corresponding position to the buffer pad. Both the buffer pad and the clamping block are arc-shaped. A groove 27 is set on the positioning block and the clamping block, and the clamping block is placed in the groove. Ribs 28 are fastened between the two sides of the clamping block and the push rod. A relief groove 29 is set on the outer wall of the stop rod and the ribs, and the ribs pass through the relief groove.

[0068] During step S8, when the hot-pressed silicon carbide ring blank is loaded into the support groove, the lifting part is in its lowest position. At this time, the vertical plate is low, and the opening end of the support groove is close to the upper part of the vertical plate. The hot-pressed silicon carbide ring blank is less likely to touch the vertical plate and break. After the hot-pressed silicon carbide ring blank is loaded into the support groove, the top ring is rotated to drive the push rod to move axially, so that the clamping block fits and clamps the hot-pressed silicon carbide ring blank. After the hot-pressed silicon carbide ring blank is loaded, the lifting part is raised, so that the hot-pressed silicon carbide ring blank is hidden between the two vertical plates. At this time, the lifting part can protect the hot-pressed silicon carbide ring blank. The cleaning fixture is transferred to the oxidation cleaning tank through the lifting part without touching the hot-pressed silicon carbide ring blank during the transfer. Other steps are the same as in Example 1.

[0069] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the present invention in any way. Other variations and modifications may be made without departing from the technical solutions described in the claims.

Claims

1. A method for processing ultrathin hot-pressed silicon carbide rings in a semiconductor rapid annealing furnace, characterized in that, Includes the following steps: S1, The hot-pressed silicon carbide ring blank is loaded onto the fixture, which is provided with an installation groove, and the hot-pressed silicon carbide ring blank is fitted and installed in the installation groove. S2, use a vertical grinding machine to remove the inner section difference allowance on one side of the hot-pressed silicon carbide ring blank to form an annular groove on the hot-pressed silicon carbide ring blank. The grinding head of the vertical grinding machine moves from top to bottom and inward. S3, remove the hot-pressed silicon carbide ring blank and load the support ring into the mounting groove. After the hot-pressed silicon carbide ring blank is flipped over, it is continued to be installed into the mounting groove. At this time, the annular notch fits and supports the support ring. S4. The inner step allowance on the other side of the hot-pressed silicon carbide ring blank is machined by radial feed on a vertical lathe, thereby forming an ultra-thin inner step on the inner side of the hot-pressed silicon carbide ring blank. S5, remove the hot-pressed silicon carbide ring blank and disassemble the support ring. Turn the hot-pressed silicon carbide ring blank over and install it into the mounting groove. S6. A grooving tool is used to machine a ring groove on the surface of a hot-pressed silicon carbide ring blank. Several protruding grinding edges are evenly distributed on the grooving tool, and the grinding edges are adapted to the ring groove. S7, place the hot-pressed silicon carbide ring blank into the sintering furnace for sintering at 650℃; S8, the cooled hot-pressed silicon carbide ring blank is loaded onto the cleaning fixture and placed in the oxidation cleaning tank for cleaning. The hot-pressed silicon carbide ring blank is vertically immersed in water. S9, after being removed, completes the hot-pressed silicon carbide ring processing; Solid rod wax is used for bonding between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove in S1, S3, and S5.

2. The method for processing ultra-thin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces according to claim 1, characterized in that, The fixture includes a base and a positioning ring. The positioning ring is mounted on the surface of the base to form a mounting groove, and several radial locking pins are installed between the positioning ring and the base.

3. The method for processing ultra-thin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces according to claim 1, characterized in that, The gap between the outer wall of the hot-pressed silicon carbide ring blank and the side wall of the mounting groove is 0.01-0.02mm.

4. The method for processing ultra-thin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces according to claim 1, characterized in that, The two ends of the grinding cutting edge are set at an angle that deviates from the radial direction, and a chip removal groove is formed between two adjacent grinding cutting edges.

5. A method for processing ultrathin hot-pressed silicon carbide rings for a semiconductor rapid annealing furnace according to any one of claims 1 to 4, characterized in that, The cleaning fixture includes two upright plates, with several baffles installed between the two upright plates. All the baffles together form a support groove with an open top. In step S8, the hot-pressed silicon carbide ring blank is loaded into the support groove.

6. The method for processing ultra-thin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces according to claim 5, characterized in that, Several slots are spaced apart on the stop bar, and the edge of the hot-pressed silicon carbide ring blank is placed in the slot.

7. The method for processing ultrathin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces according to claim 5, characterized in that, The upright plate includes a fixed part and a lifting part. The lifting part is movably mounted on the fixed part, the stop bar is mounted on the fixed part, and the opening end of the support groove is close to the upper end of the fixed part.

8. The method for processing ultrathin hot-pressed silicon carbide rings for semiconductor rapid annealing furnaces according to claim 6, characterized in that, Several positioning blocks are installed on the stop bar, and the gap between two adjacent positioning blocks forms a slot. A clamping block is installed on one side wall of the slot. The stop bar has a tubular structure, and a push rod that can move axially is inserted inside the stop bar. All clamping blocks are connected to the push rod. In S8, after the hot-pressed silicon carbide ring blank is loaded into the support groove, the push rod moves axially to make the clamping block fit and clamp the hot-pressed silicon carbide ring blank.

9. A method for processing ultrathin hot-pressed silicon carbide rings for a semiconductor rapid annealing furnace according to claim 8, characterized in that, A positioning spring is installed inside the stop bar, and the positioning spring abuts against the push rod. A top ring that can move axially is installed on a vertical plate, and the ends of all push rods abut against the top ring.

10. A method for processing ultrathin hot-pressed silicon carbide rings for a semiconductor rapid annealing furnace according to claim 8, characterized in that, A buffer pad is installed at the bottom of the card slot, and the buffer pad and the positioning block are integrated into one structure.

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