MOCVD reaction device with anti-oxidation and high-temperature resistant heater

Abstract

The application discloses a MOCVD reaction device with an anti-oxidation and high-temperature-resistant heater, a gas path blocking cover is arranged at the lower part of a growth disc, the gas path blocking cover comprises an upper cover body, a lower cover body and a protection gas path, the upper cover body and the lower cover body jointly form a cavity with an annular air outlet at the upper part, one end of the protection gas path is communicated with the cavity, the other end of the protection gas path extends out of the reactor shell and is connected with a shielding gas source, the annular air outlet is located below the growth disc, shielding gas blown out of the annular air outlet forms a gas wall, the growth disc, the upper cover body and the gas wall form a sealed space capable of blocking the oxygen-containing reaction gas from entering, and the heater is located in the sealed space. The application can effectively prevent the heater from being corroded by the oxygen-containing reaction gas and prolong the service life of the equipment.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical vapor deposition, in particular to a MOCVD reaction device with an oxidation-proof and high-temperature-resistant heater. BACKGROUND

[0002] At present, the main methods for preparing oxide films include metal organic chemical vapor deposition (MOCVD), magnetron sputtering, vacuum evaporation deposition, sol-gel method and spray pyrolysis method, etc. Compared with other growth methods of thin film materials, MOCVD growth can obtain excellent crystalline performance, realize large capacity, large size and uniform oxide film growth, and is more convenient for uniform doping control of other elements, and can grow complex component fine structures. At the same time, it also has a wide growth range of film deposition temperature and thin film deposition rate, and has the characteristics of smooth thin film surface and good film uniformity.

[0003] The MOCVD reaction device is a device for metal organic chemical vapor deposition, and the MOCVD reaction device has a heating device for keeping the reaction cavity in a high-temperature horizontal temperature state and a reaction gas for forming a deposition layer on the surface of the substrate. However, it is found in actual use that with the use of the MOCVD reaction device, the oxygen in the reaction gas will contact the heating device and corrode the heating device, so the MOCVD reaction device needs to be designed to ensure that the heating device will not contact the reaction gas. SUMMARY

[0004] The technical problem to be solved by the present application is to solve the above-mentioned deficiencies of the prior art, and to provide a MOCVD reaction device with an oxidation-proof and high-temperature-resistant heater.

[0005] In order to achieve the above technical purpose, the technical scheme adopted by the present application is:

[0006] The application discloses a MOCVD reaction device with an oxidation-proof and high-temperature-resistant heater, which comprises a reactor shell, a reaction cavity arranged in the reactor shell, an air inlet arranged at the upper end of the reaction cavity, an air outlet arranged at the lower end of the reaction cavity, a growth disc arranged in the reaction cavity and used for placing a substrate to be grown, and a heater arranged at the bottom of the growth disc and used for heating the growth disc and the space near the growth disc; the oxygen-containing reaction gas is blown into the reaction cavity through the air inlet, can be deposited on the surface of the substrate to be grown and form a deposition layer, and can be blown out of the reaction cavity through the air outlet; wherein, a gas path blocking cover is arranged at the lower part of the growth disc; the gas path blocking cover comprises an upper cover body, a lower cover body and a protection gas path; the upper cover body and the lower cover body jointly form a cavity with an annular air passage at the upper part; one end of the protection gas path is communicated with the cavity, and the other end of the protection gas path extends out of the reactor shell and is connected with a shielding gas source; the annular air passage is located below the growth disc; the shielding gas blown out of the annular air passage forms a gas wall; the growth disc, the upper cover body and the gas wall form a sealed space which can block the oxygen-containing reaction gas from entering; and the heater is arranged in the sealed space.

[0007] In order to optimize the above technical solution, the specific measures taken also include:

[0008] The upper cover body comprises a first bottom disc and a first lining edge; the first bottom disc is horizontally arranged; the first lining edge is fixedly arranged around the periphery of the first bottom disc; the outer end of the first lining edge is upwardly bent; the lower cover body comprises a second bottom disc and a second lining edge; the second bottom disc is horizontally arranged; the second lining edge is fixedly arranged around the periphery of the second bottom disc; the outer end of the second lining edge is upwardly bent; the second lining edge is located outside the first lining edge; and a gap is formed between the first lining edge and the second lining edge, which is the annular air passage.

[0009] The first lining edge and the second lining edge are arranged in parallel.

[0010] The upper cover body and the lower cover body are fixedly connected through a connecting block.

[0011] A gas distribution disc is arranged between the first bottom disc and the second bottom disc; the gas distribution disc is fixedly matched with the first bottom disc and / or the second bottom disc; a gap is formed between the gas distribution disc and the lower surface of the first bottom disc; a gap is formed between the gas distribution disc and the second bottom disc; one end of the protection gas path is opened on the upper surface of the second bottom disc; a plurality of gas distribution holes are arranged on the gas distribution disc and penetrate the gas distribution disc in the up-down direction; and the upper opening of the gas distribution hole is obliquely arranged and inclined to the annular air passage.

[0012] A heat insulation cover is further arranged in the reactor shell; the heat insulation cover is annularly arranged outside the growth disc and the gas path blocking cover; and a mesh cover is fixedly arranged at the air inlet and used for preventing sundries from falling into the reaction cavity through the air inlet.

[0013] The heat insulation cover is fixedly connected with the inner side of the reactor shell.

[0014] The growth disc is made of graphite material.

[0015] The heater is composed of several layers of tungsten-rhenium alloy heating sheets, and each layer of tungsten-rhenium alloy heating sheet is in the same horizontal plane.

[0016] The shielding gas is nitrogen.

[0017] The present application has the following advantages:

[0018] The gas path blocking cover is connected with the shielding gas source, and the annular air vent is further arranged on the upper portion of the gas path blocking cover.

[0019] The gas path blocking cover can be directly added to the traditional MOCVD reaction device to prevent the heater from being corroded by the oxygen-containing reaction gas, and is very suitable for upgrading the traditional MOCVD reaction device.

[0020] The tungsten-rhenium alloy heating sheet can work at a higher temperature, and the tungsten-rhenium alloy is catalyzed by oxygen, so the gas path blocking cover is needed to block oxygen. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is an explosion view of a MOCVD reaction device with an anti-oxidation and high-temperature-resistant heater according to the present application;

[0022] Figure 2 is a structural schematic view of a MOCVD reaction device with an anti-oxidation and high-temperature-resistant heater according to the present application;

[0023] Figure 3 is a structural schematic view of a gas path blocking cover.

[0024] In the figure, the reactor shell 1, the gas inlet 11, the gas outlet 12, the growth disc 2, the heater 3, the gas path blocking cover 4, the upper cover body 41, the first bottom disc 41a, the first lining edge 41b, the lower cover body 42, the second bottom disc 42a, the second lining edge 42b, the protective gas path 43, the annular air vent 44, the cavity 45, the connecting block 46, the gas distribution disc 47, the heat shield 5, and the mesh cover 6. DETAILED DESCRIPTION

[0025] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be described and illustrated below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application. Based on the embodiments provided by the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort belong to the scope of the present application.

[0026] Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application, and for those of ordinary skill in the art, the present application can also be applied to other similar scenarios without creative effort based on the accompanying drawings. In addition, it can be understood that although the efforts made in the development process can be complex and lengthy, for those of ordinary skill in the art related to the content disclosed in the present application, some design, manufacture or production changes based on the technical content disclosed in the present application are only routine technical means, and should not be understood as insufficient disclosure of the content disclosed in the present application.

[0027] In the present application, "embodiments" means that the specific features, structures or characteristics described in conjunction with the embodiments can be included in at least one embodiment of the present application. The phrase appears at various places in the specification does not necessarily refer to the same embodiment, nor is it mutually exclusive or alternative embodiments. It is explicitly and implicitly understood by those of ordinary skill in the art that the embodiments described in the present application can be combined with other embodiments without conflict.

[0028] Unless otherwise defined, technical terms and scientific terms used in the present application shall have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. Unless otherwise defined, the terms "one", "a", "an", "the" and like terms refer to both the singular and the plural. The terms "comprising", "comprises" and "comprised of", and variations thereof, do not preclude the adding of a further step or steps, units or elements, to the process, method, system, product or apparatus. The terms "connected", "coupled", and "coupling" are not limited to direct and physical connections, but can also include indirect and wireless connections. The term "plurality" means two or more. The term "and / or" describes associated objects in association relationship, which means that there are three relationships, for example, "A and / or B" can mean that A exists alone, A and B exist together, and B exists alone. The character " / " generally means that the associated objects are in an "or" relationship. The terms "first", "second", "third" and the like are only to distinguish similar objects, and do not represent a specific order of the objects.

[0029] As shown in the accompanying drawings Figures 1-2 A MOCVD reaction device with an anti-oxidation and high-temperature resistant heater according to the present application comprises a reactor shell 1, a growth plate 2, a heater 3, a gas path blocking cover 4 and a heat insulation cover 5, wherein the gas path blocking cover 4 is the main innovative structure of the present application.

[0030] The reactor shell 1 is provided with an air inlet 11 at the top, which is used to inject deposition gas. In the present application, the injected deposition gas is gallium chloride gas and oxygen in a predetermined ratio. The reactor shell 1 is provided with an air outlet 12 at the bottom, through which the deposition gas and shielding gas are discharged.

[0031] The growth plate 2 is made of graphite material and is fixedly installed in the reactor shell 1.

[0032] The heater 3 is arranged at the bottom of the growth plate 2 and is composed of five layers of tungsten-rhenium alloy heating sheets arranged from inside to outside. The outermost tungsten-rhenium alloy heating sheet is close in size to the growth plate 2.

[0033] The air path blocking cover 4 comprises an upper cover body 41, a lower cover body 42, a protection air path 43, a connecting block 46 and a gas distribution disc 47. The upper cover body 41 and the lower cover body 42 are bowl-shaped, and the lower cover body 42 is larger than the upper cover body 41. Both the upper cover body 41 and the lower cover body 42 are composed of a bottom disc and a lining. The bottom disc is horizontally arranged, and the lining is fixed around the periphery of the bottom disc. The outer end of the lining is upwardly curved. The lining of the lower cover body 42 is located outside the lining of the upper cover body 41, thereby forming an annular air vent 44. The gas distribution disc 47 is arranged in the cavity 45 between the upper cover body 41 and the lower cover body 42. The gas distribution disc 47 is provided with a plurality of gas distribution holes. The gas distribution holes penetrate the gas distribution disc 47 from top to bottom, and the upper openings of the gas distribution holes are inclined to the annular air vent 44. The upper cover body 41, the lower cover body 42 and the gas distribution disc 47 are fixed together. The protection air path 43 is connected to the lower cover body 42. Nitrogen or argon is injected into the protection air path 43 as shielding gas.

[0034] The heat insulation cover 5 is annularly arranged outside the growth disc 2 and the air path blocking cover 4. The heat insulation cover 5 serves to keep warm.

[0035] The net cover 6 is arranged on the top of the reactor shell 1. The net cover 6 is used to prevent sundries from falling into the reaction cavity from the air inlet 11.

[0036] During the operation of the MOCVD reaction device, nitrogen is first injected from the air inlet 11, and the gas in the reactor shell 1 is discharged from the air outlet 12, so that the reactor shell 1 is filled with nitrogen.

[0037] Then, the air inlet 11 injects uniformly mixed gallium chloride gas and oxygen. The gallium chloride gas and the oxygen are blown to the upper surface of the growth disc 2 to deposit the substrate to be grown on the upper surface of the growth disc 2. The heater 3 continuously generates heat during this process, so as to keep the temperature of the substrate to be grown constant.

[0038] At the same time when the air inlet 11 injects the uniformly mixed gallium chloride gas and oxygen, the protection air path 43 injects shielding gas. After being separated by the gas distribution disc 47, the shielding gas flows to the annular air vent 44, and then flows upwardly through the annular air vent 44. The shielding gas forms a gas wall to block the contact between the oxygen-containing reaction gas and the heater, thereby preventing the heater from being corroded by the oxygen-containing reaction gas.

[0039] The used oxygen-containing reaction gas and shielding gas are finally discharged through the air outlet 12.

[0040] The above is only the preferred embodiment of the present application. The protection scope of the present application is not limited to the above-mentioned embodiment. Any technical solution falling within the concept of the present application belongs to the protection scope of the present application. It should be noted that some improvements and decorations made by the ordinary skilled in the art without departing from the principle of the present application should be considered as the protection scope of the present application.

Claims

1. A MOCVD reaction device with anti-oxidation and high-temperature resistant heater, comprising a reactor shell (1), a reaction cavity is arranged in the reactor shell (1), an air inlet (11) is arranged at the upper end of the reaction cavity, an air outlet (12) is arranged at the lower end of the reaction cavity, a growth tray (2) for placing a substrate to be grown is arranged in the reaction cavity, a heater (3) is arranged at the bottom of the growth tray (2), the heater (3) is used for heating the growth tray (2) and the space near the growth tray (2), the air inlet (11) blows oxygen-containing reaction gas into the reaction cavity, the oxygen-containing reaction gas can deposit on the surface of the substrate to be grown to form a deposition layer, and the oxygen-containing reaction gas can be blown out of the reaction cavity from the air outlet (12), characterized in that: The lower part of the growth tray (2) is provided with an air path blocking cover (4), the air path blocking cover (4) comprises an upper cover body (41), a lower cover body (42) and a protective air path (43), the upper cover body (41) and the lower cover body (42) enclose a cavity (45) with an annular air vent (44) at the upper part, one end of the protective air path (43) is communicated with the cavity (45), the other end of the protective air path (43) extends out of the reactor shell (1) and is connected with a shielding gas source, the annular air vent (44) is located below the growth tray (2), the shielding gas blown by the annular air vent (44) forms an air wall, the growth tray (2), the upper cover body (41) and the air wall form a sealed space which can block the oxygen-containing reaction gas, and the heater (3) is located in the sealed space; the upper cover body (41) comprises a first bottom disc (41a) and a first lining edge (41b), the first bottom disc (41a) is horizontally arranged, and the first lining edge (41b) is fixedly arranged around the periphery of the first bottom disc (41a), the outer end of the first lining edge (41b) is upwardly tilted, the lower cover body (42) comprises a second bottom disc (42a) and a second lining edge (42b), the second bottom disc (42a) is horizontally arranged, and the second lining edge (42b) is fixedly arranged around the periphery of the second bottom disc (42a), the outer end of the second lining edge (42b) is upwardly tilted, the second lining edge (42b) is located outside the first lining edge (41b), and a gap is formed between the first lining edge (41b) and the second lining edge (42b), the gap is the annular air vent (44), a gas distribution disc (47) is arranged between the first bottom disc (41a) and the second bottom disc (42a), the gas distribution disc (47) is fixedly connected with the first bottom disc (41a) and / or the second bottom disc (42a), a gap is formed between the gas distribution disc (47) and the lower surface of the first bottom disc (41a), a gap is formed between the gas distribution disc (47) and the second bottom disc (42a), one end of the protective air path (43) is opened on the upper surface of the second bottom disc (42a), and a plurality of gas distribution holes are arranged on the gas distribution disc (47), the gas distribution holes vertically penetrate the gas distribution disc (47), and the upper opening of the gas distribution hole is inclinedly arranged and directed to the annular air vent (44). ​ 2. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 1, characterized in that: The first lining edge (41b) and the second lining edge (42b) are arranged in parallel.

3. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 2, characterized in that: The upper cover body (41) and the lower cover body (42) are fixedly connected through a connecting block (46).

4. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 3, characterized in that: A heat insulation cover (5) is further arranged in the reactor shell (1), the heat insulation cover (5) is annularly arranged outside the growth tray (2) and the air path blocking cover (4), a mesh cover (6) is fixedly arranged at the air inlet (11), and the mesh cover (6) is used for preventing sundries from falling into the reaction cavity through the air inlet (11).

5. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 4, characterized in that: The heat insulation cover (5) is fixedly connected with the inner side of the reactor shell (1).

6. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 1, characterized in that: The growth tray (2) is made of graphite material.

7. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 1, characterized in that: The heater (3) is composed of a plurality of layers of tungsten-rhenium alloy heating sheets, and the tungsten-rhenium alloy heating sheets are arranged in the same horizontal plane.

8. The MOCVD reaction device with the anti-oxidation and high-temperature resistant heater according to claim 1, characterized in that: The shielding gas is nitrogen.

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