Display panel and electronic device

Abstract

The present application provides a display panel and an electronic device. The display panel includes a substrate, a light-shielding layer, an active layer, and a conversion layer. By disposing the conversion layer on a side of the active layer close to the substrate, the conversion layer absorbs blue light and green light with higher energy in the light and converts them into light with lower energy, thereby reducing the strong light directly irradiating the active layer and reducing the influence of light on thin-film transistors.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and in particular, to a display panel and an electronic device. Background Art

[0002] With the evolution of optoelectronic and semiconductor technologies, the vigorous development of flat panel displays has also been driven. Among various flat panel displays, liquid crystal displays (LCDs) have become the mainstream in the market due to their many excellent characteristics such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference. Compared with traditional amorphous silicon thin-film transistors, low-temperature polysilicon thin-film transistors have the advantages of small thin-film circuit area, fast electron migration rate, and stable structure.

[0003] In existing low-temperature polysilicon thin-film transistor display panels, in order to prevent the problem of leakage current caused by excessive light intensity directly irradiating the active layer, a metal light-shielding layer is usually provided below the active layer for light shielding. When the brightness of the backlight module is too high (reaching 100,000 to 200,000 nits), some light can penetrate the light-shielding layer and irradiate the active layer. If only the thickness of the light-shielding layer is increased to reduce the light irradiating the active layer, it will lead to the problem of electrostatic discharge. If, on the basis of a single-layer metal light-shielding layer, an additional metal light-shielding layer and a substrate are added to reduce the light irradiating the active layer, it will not only increase the production process, but also increase the thickness and weight of the display panel.

[0004] Therefore, it is necessary to provide a display panel and an electronic device to improve this defect. Summary of the Invention

[0005] Embodiments of the present application provide a display panel and an electronic device, which can reduce the blue light irradiating the active layer and reduce the influence of light irradiation on thin-film transistors.

[0006] Embodiments of the present application provide a display panel, the display panel comprising:

[0007] A substrate;

[0008] An active layer disposed on one side of the substrate;

[0009] A light-shielding layer disposed between the substrate and the active layer, opposite to the active layer, and the positive projection of the light-shielding layer on the substrate at least covers the positive projection of the active layer on the substrate; and

[0010] A conversion layer disposed on the side of the active layer close to the substrate, opposite to the active layer, and the positive projection of the conversion layer on the substrate at least covers the positive projection of the active layer on the substrate;

[0011] Among them, the conversion layer absorbs light with a wavelength between 400 nanometers and 600 nanometers.

[0012] According to an embodiment of the present application, the component of the conversion layer is Zn(Py)L 1 L n (NO3)3, Py is pyridine, and L 1 is a Schiff base ligand, and L n is a lanthanide metal ion.

[0013] According to an embodiment of the present application, L 1 is an o-vanillin condensed 2,3-diaminonaphthalene ligand.

[0014] According to an embodiment of the present application, L n is Yb 3+ , Nd 2+ or Er 3+ .

[0015] According to an embodiment of the present application, the component of the conversion layer further includes [Ru(cpmp)(ddpd)][PF6]2.

[0016] According to an embodiment of the present application, the conversion layer is disposed between the light-shielding layer and the substrate or the active layer.

[0017] According to an embodiment of the present application, the display panel includes at least one layer of the conversion layer, and the conversion layer is disposed at least at one position among the surface of the substrate facing away from the active layer, between the light-shielding layer and the substrate, the surface of the light-shielding layer close to the active layer, and the surface of the active layer close to the light-shielding layer.

[0018] According to an embodiment of the present application, the display panel includes multiple layers of the conversion layer, and the component of the conversion layer includes Zn(Py)L 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2;

[0019] Among them, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in multiple layers of the conversion layer gradually increases from the layer farthest from the active layer to the layer closest to the active layer.

[0020] According to an embodiment of the present application, in the order from the layer farthest from the active layer to the layer closest to the active layer, in the nth layer of the conversion layer, Zn(Py)L 1 L n(NO3)3 and [Ru(cpmp)(ddpd)][PF6]2 have a molar ratio of (2n - 1):1, where n is greater than or equal to 1.

[0021] According to an embodiment of the present application, the thickness of the conversion layer is greater than or equal to 0.1 micrometer and less than or equal to 1 micrometer.

[0022] According to an electronic device provided by the above embodiment of the present application, an embodiment of the present application further provides an electronic device, and the electronic device includes a display panel as described above.

[0023] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and an electronic device. The display panel includes a substrate, a light-shielding layer, an active layer, and a conversion layer. The light-shielding layer is disposed on the substrate, the active layer is disposed on the light-shielding layer and is disposed opposite to the light-shielding layer, and the conversion layer is disposed on the side of the active layer close to the substrate and is disposed opposite to the active layer. By disposing the conversion layer on the side of the active layer close to the substrate, the conversion layer absorbs light with a wavelength between 400 nanometers and 600 nanometers, and uses the conversion layer to absorb high-energy blue light and green light in the light and convert it into light with a lower energy band, thereby reducing the strong light directly irradiating the active layer and reducing the influence of light on the thin-film transistor. Description of the Drawings

[0024] Figure 1 It is a schematic structural diagram of a display panel provided by an embodiment of the present application;

[0025] Figure 2 It is a schematic structural diagram of a first array substrate provided by an embodiment of the present application;

[0026] Figure 3 It is a schematic diagram of the excitation wavelength provided by this embodiment;

[0027] Figure 4 It is a schematic diagram of the emission wavelength provided by this embodiment;

[0028] Figure 5 It is a schematic structural diagram of a second array substrate provided by this embodiment;

[0029] Figure 6 It is a schematic structural diagram of a third array substrate provided by this embodiment;

[0030] Figure 7 It is a schematic structural diagram of a fourth array substrate provided by this embodiment;

[0031] Figure 8 It is a schematic structural diagram of a fifth array substrate provided by this embodiment. Detailed Description of the Embodiments

[0032] The following description of each embodiment refers to the attached drawings for illustrating specific embodiments in which the present application can be implemented. The directional terms mentioned in the present application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., only refer to the directions of the attached drawings. Therefore, the directional terms used are for explaining and understanding the present application, rather than for limiting the present application. In the drawings, structural similar units are denoted by the same reference numerals.

[0033] The present application will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0034] Please refer to Figure 1 , an embodiment of the present application provides a display panel. The display panel is a liquid crystal display panel, and the display panel includes an array substrate 10, a counter substrate 20, a liquid crystal layer 30, and a backlight module 40. The array substrate 10 and the counter substrate 20 are disposed opposite to each other. The liquid crystal layer 30 is disposed between the array substrate 10 and the counter substrate 20, and the backlight module 40 is disposed on a side of the array substrate 10 facing away from the counter substrate 20.

[0035] In this embodiment, the display panel may include a color filter layer, and the color filter layer may be disposed on the counter substrate 20 or on the array substrate 10.

[0036] Please refer to Figure 2 , the array substrate 10 includes a substrate 11, a light-shielding layer 12, and an active layer 13. The active layer 13 is disposed on one side of the substrate 11, and the light-shielding layer 12 is disposed between the substrate 11 and the active layer 13.

[0037] It should be noted that the active layer 13 being disposed on one side of the substrate 11 means that the active layer 13 is located above the substrate 11, and at least the light-shielding layer 12 and other insulating layers are provided between the active layer 13 and the substrate 11.

[0038] Please refer to Figure 1 , the light-shielding layer 12 is disposed on a surface of the substrate 11 facing away from the backlight module 40. A buffer layer is also provided on the substrate 11. The buffer layer 15 covers the light-shielding layer 12, and the active layer 13 is disposed on a surface of the buffer layer 15 facing away from the substrate 11. In the thickness direction of the display panel, the light-shielding layer 12 and the active layer 13 are disposed opposite to each other, and the orthographic projection of the light-shielding layer 12 on the substrate 11 at least covers the orthographic projection of the active layer 13 on the substrate. The light-shielding layer 12 can be used to prevent the light emitted by the backlight module 40 from irradiating the active layer 13.

[0039] In this embodiment, the orthographic projection range of the light-shielding layer 12 on the substrate 11 is larger than the orthographic projection range of the active layer 13 on the substrate 11, and the orthographic projection of the light-shielding layer 12 on the substrate 11 can completely cover the orthographic projection of the active layer 13 on the substrate 11. In some other embodiments, the orthographic projection range of the light-shielding layer 12 on the substrate 11 is the same as the orthographic projection range of the active layer 13 on the substrate 11, and the orthographic projection of the light-shielding layer 12 on the substrate 11 and the orthographic projection of the active layer 13 on the substrate 11 can completely overlap.

[0040] In this embodiment, the buffer layer 15 includes a silicon nitride layer and a silicon oxide layer, and the silicon oxide layer is disposed on the silicon nitride layer.

[0041] In this embodiment, the material of the active layer 13 is polysilicon. The active layer 13 uses an excimer laser as a heat source. After passing through the transmission system, the laser will generate a laser beam with a uniformly distributed energy and be transmitted onto the active layer of the amorphous silicon structure. After the active layer 13 of the amorphous silicon structure absorbs the energy of the excimer laser, it is transformed into a polysilicon structure.

[0042] In this embodiment, the array substrate 10 further includes a first insulating layer 16, a first metal layer 18, a second insulating layer 17, a second metal layer 19, a planarization layer 101, a common electrode layer 102, a third insulating layer 103, and a pixel electrode layer 104 that are sequentially stacked on the side of the active layer 13 facing away from the substrate 11. The first metal layer 18 may include a plurality of patterned gates and a plurality of scan lines extending in the row direction, and the second metal layer 19 may include a plurality of patterned source electrodes, drain electrodes, and a plurality of data lines extending in the column direction.

[0043] It should be noted that Figure 1 only the positional relationship between the conversion layer 14 and the active layer 13 and the light-shielding layer 12 is schematically shown, Figure 1 the structures of the display panel and the array substrate shown do not represent the structures of the display panel and the array substrate in actual applications. The specific film layer structures of the display panel and the array substrate can refer to the prior art and are not limited herein.

[0044] Furthermore, the array substrate 10 includes a conversion layer 14. The conversion layer 14 is disposed on the side of the active layer 13 close to the substrate 11. The conversion layer 14 is disposed opposite to the active layer 13, and the orthographic projection of the conversion layer 14 on the substrate 11 at least covers the orthographic projection of the active layer 13 on the substrate 11.

[0045] In this embodiment, as Figure 2 shown, the conversion layer 14 is disposed opposite to the active layer 13. The area of the conversion layer 14 is larger than the area of the active layer 13. The orthographic projection of the conversion layer 14 on the substrate 11 can completely cover the orthographic projection of the active layer 13 on the substrate 11, so that the light irradiated from the bottom of the display panel to the active layer 13 can be reduced.

[0046] In some other embodiments, the area of the conversion layer 14 may be the same as that of the active layer 13, and the orthographic projection of the conversion layer 14 on the substrate 11 may completely overlap with the orthographic projection of the active layer 13 on the substrate 11.

[0047] In this embodiment, the conversion layer 14 absorbs light with a wavelength between 400 nm and 600 nm. Under this structure, the conversion layer 14 absorbs the relatively high-energy blue light and green light emitted by the backlight module and converts them into relatively low-energy near-infrared light or infrared light, so as to reduce the light intensity directly incident on the active layer 13, thereby reducing the influence of light on the thin-film transistor.

[0048] Furthermore, the orthographic projection of the conversion layer 14 on the substrate 11 at least covers the orthographic projection of the light-shielding layer 12 on the substrate 11.

[0049] As Figure 2 shown, the conversion layer 14 and the light-shielding layer 12 are disposed opposite to each other, the area of the conversion layer 14 is the same as that of the light-shielding layer 12, and the orthographic projection of the conversion layer 14 on the substrate 11 completely overlaps with the orthographic projection of the light-shielding layer 12 on the substrate, so as to ensure that the light passing through the conversion layer 14 can be absorbed by the light-shielding layer 12, avoiding the light from directly irradiating the active layer 13 through the gap between the conversion layer 14 and the light-shielding layer 12, thereby further reducing the influence of light on the thin-film transistor.

[0050] In some other embodiments, the area of the conversion layer 14 may also be larger than that of the light-shielding layer 12, and the orthographic projection of the conversion layer 14 on the substrate 11 may completely cover the orthographic projection of the light-shielding layer 12 on the substrate 11.

[0051] Furthermore, the component of the conversion layer 14 includes Zn(Py)L 1 L n (NO3)3, Py is pyridine, and L 1 is a Schiff base ligand, and L n is a lanthanide metal ion.

[0052] Specifically, L 1 is an o-vanillin condensed 2,3-diaminonaphthalene ligand, and the o-vanillin condensed 2,3-diaminonaphthalene ligand L 1 can be generated by the condensation reaction of 2,3-diaminonaphthalene and o-vanillin. The structure of L1 is shown in structural formula (1):

[0053]

[0054] Specifically, L n is Yb 3+ , Nd 2+ or Er 3+, that is, the components of the conversion layer 14 may include Zn(Py)L 1 Yb(NO3)3, Zn(Py)L 1 Nd(NO3)3 or Zn(Py)L 1 any one of Er(NO3)3.

[0055] In the actual preparation process, zinc nitrate and ligand L can be used to 1 generate the complex ZnL 1 , and then reflux the mixture of lanthanide nitrate and pyridine with tetrahydrofuran to generate the component Zn(Py)L 1 L n (NO3)3.

[0056] Please refer to Figure 3 , Figure 3 the excitation wavelength schematic diagram provided for this embodiment. The component Zn(Py)L of the conversion layer 14 provided in this embodiment 1 Yb(NO3)3, Zn(Py)L 1 Nd(NO3)3 and Zn(Py)L 1 any one of Er(NO3)3 has a significantly higher absorption rate for light with a wavelength between 300 and 500 nanometers than ligand L 1 and ligand Zn(Py)L 1 .

[0057] Please refer to Figure 4 , Figure 4 the emission wavelength schematic diagram provided for this embodiment. The wavelength emitted by Zn(Py)L 1 Yb(NO3)3 is about 900 to 1100 nanometers, and the wavelength emitted by Zn(Py)L 1 Nd(NO3)3 is about 1000 to 1100 nanometers, and the wavelength emitted by Zn(Py)L 1 Er(NO3)3 is about 1400 to 1600 nanometers.

[0058] In one embodiment, Zn(Py)L 1 L n (NO3)3 is Zn(Py)L 1 Yb(NO3)3. Zn(Py)L 1 Yb(NO3)3 can absorb the strong blue light with a wavelength between 400 nanometers and 500 nanometers emitted by the backlight module and convert it into near-infrared light or infrared light with a lower energy and a wavelength between 900 nanometers and 1100 nanometers, thereby reducing the strong light directly irradiating the active layer 13 and reducing the impact of light on the thin-film transistor.

[0059] Preferably, L nFor Er 3+ , namely Zn(Py)L 1 L n (NO3)3 is preferably Zn(Py)L 1 Er(NO3)3. Compared with Zn(Py)L 1 Yb(NO3)3 and Zn(Py)L 1 Nd(NO3)3, since the wavelength of the light emitted by Zn(Py)L 1 Er(NO3)3 is the longest, the energy of the light emitted by Zn(Py)L 1 Er(NO3)3 is the lowest, so the influence on the active layer 13 is also the lowest.

[0060] Furthermore, the composition of the conversion layer 14 also includes [Ru(cpmp)(ddpd)][PF6]2, and [Ru(cpmp)(ddpd)][PF6]2 can absorb green light with a wavelength between 500 nanometers and 600 nanometers and convert it into near-infrared light with a wavelength above 700 nanometers.

[0061] In this embodiment, the conversion layer 14 is composed of Zn(Py)L 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2, where Zn(Py)L 1 L n (NO3)3 is preferably Zn(Py)L 1 Er(NO3)3. The liquid molar extinction coefficient of Zn(Py)L 1 L n (NO3)3 is 4.5×10 4 M –1 cm –1 , and the liquid molar extinction coefficient of [Ru(cpmp)(ddpd)][PF6]2 is 5.24×10 3 M –1 cm –1 . The conversion layer 14 can absorb light with a wavelength between 400 nanometers and 600 nanometers and convert it into near-infrared light or infrared light with a wavelength above 700 nanometers, so as to further reduce the strong light directly irradiating the active layer 13 and reduce the influence of light on the thin film transistor.

[0062] Furthermore, the display panel includes at least one layer of the conversion layer 14, and the conversion layer 14 is disposed at at least one of the positions on the surface of the substrate 11 facing away from the active layer 13, between the light-shielding layer 12 and the substrate 11, on the surface of the light-shielding layer 12 close to the active layer 13, and on the surface of the active layer 13 close to the light-shielding layer 12.

[0063] In one embodiment, in combinationFigure 1 and Figure 2 As shown in Figure 2 , the display panel includes a conversion layer 14 disposed on the surface of the substrate 11 facing away from the active layer 13. The conversion layer 14 is in direct contact with the surface of the substrate 11 facing away from the active layer 13. In some other embodiments, the conversion layer 14 is disposed on the surface of the substrate 11 facing away from the active layer 13, and the conversion layer 14 and the surface of the substrate 11 facing away from the active layer 13 may be separated by other film layers, which is not uniquely defined here.

[0064] In this embodiment, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the conversion layer 14 is 1:1. In practical applications, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the conversion layer 14 is not limited to 1:1 in the above embodiment, and may also be 2:1, 3:1 or 3:2, etc., as long as it is greater than or equal to 1:1. In this way, the proportion of Zn(Py)L 1 L n (NO3)3 in the conversion layer 14 can be increased, and the influence of higher-energy blue light on the active layer 13 can be reduced.

[0065] In this embodiment, the thickness of the conversion layer 14 is 0.1 micrometer, and the molar extinction coefficient of Zn(Py)L 1 L n (NO3)3 in the blue light band is about 4.5×10 4 M –1 cm –1 . The blue light absorption efficiency of the conversion layer 14 is about 65%, that is, about 65% of the blue light band will be converted into light of other lower-energy bands, and the quantum yield is only about 1% when converted into the near-infrared or infrared band. Therefore, the light intensity directly irradiating the active layer 13 can be reduced, thereby reducing the influence on the thin film transistor.

[0066] In some other embodiments, the thickness of the conversion layer 14 is not limited to 0.1 micrometer in the above embodiment, and may also be, but not limited to, 0.2, 0.4, 0.6, 0.8 or 1 micrometer, etc., as long as it is between 0.1 and 1 micrometer.

[0067] Please refer to Figure 5 , Figure 5 which is a schematic structural diagram of the second array substrate provided in this embodiment. Its structure is substantially the same as that of the array substrate shown in Figure 2 , except that the conversion layer 14 is disposed between the light-shielding layer 12 and the substrate 11.

[0068] Specifically, the conversion layer 14 is formed on the surface of the substrate 11 facing away from the backlight module 40, and the light-shielding layer 12 is formed on the surface of the conversion layer 14 facing away from the substrate 11.

[0069] Please refer to Figure 6 , Figure 6 , which is a schematic structural diagram of the third array substrate provided by this embodiment. Its structure is substantially the same as that of the array substrate shown in Figure 2 . The difference is that the conversion layer 14 is disposed on the surface of the light-shielding layer 12 close to the active layer 13, the conversion layer 14 is in direct contact with the surface of the light-shielding layer 12 close to the active layer 13, and the conversion layer 14 and the active layer 13 are separated by a buffer layer 15.

[0070] Please refer to Figure 7 , Figure 7 , which is a schematic structural diagram of the fourth array substrate provided by this embodiment. Its structure is substantially the same as that of the array substrate shown in Figure 2 . The difference is that the conversion layer 14 is close to the surface of the light-shielding layer 12 of the active layer 13, the conversion layer 14 is disposed on the surface of the buffer layer 15 facing away from the substrate 11, the active layer 13 is disposed on the conversion layer 14, and is in direct contact with the surface of the conversion layer 14 facing away from the substrate 11.

[0071] Please refer to Figure 8 , Figure 8 , which is a schematic structural diagram of the fifth array substrate provided by this embodiment. Its structure is substantially the same as that of the array substrate shown in Figure 2 . The difference is that the display panel includes multiple conversion layers, and the multiple conversion layers are respectively disposed at at least two positions among the surface of the substrate facing away from the active layer, between the light-shielding layer and the substrate, the surface of the light-shielding layer close to the active layer, and the surface of the active layer close to the light-shielding layer.

[0072] Taking Figure 8 as an example, the display panel has 4 conversion layers, namely a first conversion layer 141, a second conversion layer 142, a third conversion layer 143, and a fourth conversion layer 144. The first conversion layer 141 is disposed on the surface of the substrate 11 facing away from the active layer 13, the second conversion layer 142 is disposed between the light-shielding layer 12 and the substrate 11, the third conversion layer 143 is disposed on the surface of the light-shielding layer 12 close to the active layer 13, and the fourth conversion layer 144 is disposed on the surface of the active layer 13 close to the light-shielding layer 12.

[0073] The first conversion layer 141, the second conversion layer 142, the third conversion layer 143, and the fourth conversion layer 144 are all composed of Zn(Py)L 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2.

[0074] In some other embodiments, the number of conversion layers in the display panel can be set according to actual requirements, not limited to the 4 layers in the above embodiments. For example, the display panel can also have 2 layers, 3 layers, or more than 4 layers of conversion layers.

[0075] In one embodiment, Zn(Py)L in the multi-layer conversion layer 1 L n (NO3)3 has the same molar ratio as [Ru(cpmp)(ddpd)][PF6]2, and Zn(Py)L in the conversion layer 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2 can have a molar ratio greater than or equal to 1:1.

[0076] In one embodiment, Zn(Py)L in the multi-layer conversion layer 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2 gradually increase in molar ratio from the layer farthest from the active layer to the layer closest to the active layer. In this structure, the proportion of Zn(Py)L 1 L n (NO3)3 in the conversion layer closer to the active layer can be higher, reducing the impact of higher-energy blue light on the active layer 13.

[0077] Taking Figure 8 as an example, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the second conversion layer 142 is greater than that of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the first conversion layer 141; the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the third conversion layer 143 is greater than that of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the second conversion layer 142; the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the fourth conversion layer 144 is greater than that of Zn(Py)L 1 L nThe molar ratio of (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2.

[0078] Further, in the order from the layer farthest from the active layer to the layer closest to the active layer, Zn(Py)L in the nth conversion layer 1 L n The molar ratio of (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 is (2n - 1):1, where n is greater than or equal to 1.

[0079] Taking Figure 8 as an example, the display panel has 4 conversion layers. When n = 1, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the first conversion layer 141 is 1:1; when n = 2, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the second conversion layer 142 is 3:1; when n = 3, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the third conversion layer 143 is 5:1; when n = 4, the molar ratio of Zn(Py)L 1 L n (NO3)3 to [Ru(cpmp)(ddpd)][PF6]2 in the fourth conversion layer 144 is 7:1.

[0080] According to an electronic device provided in the above embodiments of the present application, embodiments of the present application further provide an electronic device, and the electronic device includes a display panel as provided in the above embodiments. The electronic device may be, but is not limited to, a mobile phone, a laptop computer, a desktop computer, a television, a virtual reality display device, or a head-up display device, etc.

[0081] Advantages of the embodiments of the present application: Embodiments of the present application provide a display panel and an electronic device. The display panel includes a substrate, a light-shielding layer, an active layer, and a conversion layer. The light-shielding layer is disposed on the substrate, the active layer is disposed on the light-shielding layer and is disposed opposite to the light-shielding layer, and the conversion layer is disposed on the side of the active layer close to the substrate and is disposed opposite to the active layer. By disposing the conversion layer on the side of the active layer close to the substrate, the conversion layer absorbs light with a wavelength between 400 nanometers and 600 nanometers, and uses the conversion layer to absorb high-energy blue light and green light in the light and convert it into low-energy light, so as to reduce the strong light directly irradiating the active layer and reduce the influence of light on the thin-film transistor.

[0082] In summary, although the present application is disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Those of ordinary skill in the art can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application is based on the scope defined by the claims.

Claims

1. A display panel, characterized in that, The display panel includes: a substrate; an active layer disposed on one side of the substrate; a light-shielding layer disposed between the substrate and the active layer, opposite to the active layer, and a positive projection of the light-shielding layer on the substrate at least covers a positive projection of the active layer on the substrate; and a conversion layer disposed on a side of the active layer close to the substrate, the conversion layer being opposite to the active layer, and a positive projection of the conversion layer on the substrate at least covers a positive projection of the active layer on the substrate; Among them, the conversion layer absorbs light with a wavelength between 400 nanometers and 600 nanometers and converts it into near-infrared light or infrared light with a wavelength above 700 nanometers. The components of the conversion layer include Zn(Py)L 1 L n (NO3)3, where Py is pyridine, and L 1 is a Schiff base ligand, and L n is a lanthanide metal ion.

2. The display panel according to claim 1, wherein L 1 is the ligand of o-vanillin condensed with 2,3-diaminonaphthalene.

3. The display panel according to claim 1, wherein L n is Yb 3+ , Nd 2+ or Er 3+ .

4. The display panel according to claim 1, wherein The composition of the conversion layer further includes [Ru(cpmp)(ddpd)][PF6]2.

5. The display panel according to claim 1, wherein The display panel includes at least one layer of the conversion layer, and the conversion layer is disposed at at least one position among a surface of the substrate facing away from the active layer, between the light-shielding layer and the substrate, a surface of the light-shielding layer close to the active layer, and a surface of the active layer close to the light-shielding layer.

6. The display panel according to claim 5, characterized in that, The display panel includes multiple layers of the conversion layer, and the components of the conversion layer include Zn(Py)L 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2; Among them, Zn(Py)L in the multiple conversion layers 1 L n (NO3)3 and the molar ratio of [Ru(cpmp)(ddpd)][PF6]2 gradually increase from the layer farthest from the active layer to the layer closest to the active layer.

7. The display panel according to claim 6, wherein Zn(Py)L in the n-th conversion layer, in the order from the layer farthest from the active layer to the layer closest to the active layer 1 L n (NO3)3 and [Ru(cpmp)(ddpd)][PF6]2 have a molar ratio of (2n - 1):1, where n is greater than or equal to 1.

8. The display panel according to claim 1, characterized in that The thickness of the conversion layer is greater than or equal to 0.1 micrometer and less than or equal to 1 micrometer.

9. An electronic device, characterized in that, A display panel comprising the display panel according to any one of claims 1 to 8.

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