A temperature control system and method for semiconductor chamber double heating plates

Abstract

The present invention relates to the field of semiconductor manufacturing technology, and more specifically, to a temperature control system and method for a semiconductor chamber with two heating disks. The present invention provides a temperature control system for a semiconductor chamber with two heating disks, comprising: a first heating disk and a second heating disk, a temperature acquisition unit, which acquires the temperature of the first heating disk and the second heating disk; a control unit, which is arranged outside the cavity and adjusts the output power of an execution unit; an execution unit, which heats the first heating disk and the second heating disk; wherein the control unit is a PID controller, which selects multiple temperature regions for segmented PID adjustment, and performs PID adjustment on the execution unit. The present invention can respectively acquire and calibrate the temperatures of the two heating disks under different temperature environments, and combine the acquisition and improvement of PID control curves at different temperatures with temperature multi-segment PID adjustment to achieve precise temperature control of the two heating disks in a single cavity.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a temperature control system and method for a semiconductor chamber double heating plate. Background Art

[0002] A semiconductor chamber is a special environment used for semiconductor device manufacturing. It is usually an enclosed, controlled space used to perform various semiconductor manufacturing process steps. These process chambers play a vital role in the semiconductor industry because they provide a controlled environment to ensure the accuracy, repeatability and purity of the manufacturing process.

[0003] Semiconductor chamber is one of the most important equipment in semiconductor manufacturing, usually including single-chamber and multi-chamber types. Single-chamber semiconductor chamber is usually composed of a large circular chamber, while multi-chamber semiconductor chamber is composed of multiple small chambers.

[0004] In order to achieve high-temperature processes, single chambers usually use temperature controllers to control the temperature of the heating plate. However, wafer warpage is a common problem that affects the temperature during deposition, film performance, uniformity, CDU (critical dimension uniformity) during lithography and etching, and causes film peeling, which has an adverse effect on process stability and reliability.

[0005] In order to solve the warpage problem, the backside expansion method is usually used to optimize the process. This method requires the use of two upper and lower heating plates in a chamber to control the wafer temperature. The distance between the two heating plates is small, and the temperatures will affect each other. If the conventional heating method of controlling a heating plate in a single chamber is used, temperature instability will occur at a specific rate.

[0006] The conventional temperature control method for a single chamber and a heating plate is to control the temperature under the condition of a single variable, that is, the chamber environment, humidity, gas flow, etc. are the same. Therefore, after fixing the heating rate, it is only necessary to adjust the appropriate PID (Proportion Integration Differentiation) control at the process temperature to apply to the entire heating process.

[0007] However, when there are two heating plates in the chamber, which interfere with each other, the traditional method of temperature control may result in unstable heating speeds in different temperature zones. In addition, the resistance of the heating plate itself will change at different temperatures, and the upper and lower plates will heat up at the same time. For one of the heating plates, other variables are generated in the environment. Therefore, using a PID value cannot quickly adjust the entire heating process.

[0008] Meanwhile, in the prior art, the TC wafer is placed directly on the surface of the heating plate, and a paperless recorder is used to perform multi-point tests to determine the temperature range of different temperature zones and find the optimal current ratio. However, since a single chamber has two heating plates, the heating plate above the chamber cannot be tested with a TC wafer, so the optimal current ratio of the heating plate above the chamber cannot be measured. Summary of the invention

[0009] The purpose of the present invention is to provide a temperature control system and method for a semiconductor chamber with dual heating plates, so as to solve the problem in the prior art that it is difficult to accurately control the temperature of a wafer by using two upper and lower heating plates in a chamber.

[0010] Another object of the present invention is to provide a temperature control system and method for a semiconductor chamber with dual heating plates, so as to solve the problem in the prior art that the temperature of the heating plate above the cavity cannot be accurately measured.

[0011] In order to achieve the above object, the present invention provides a temperature control system for a semiconductor chamber with double heating plates, comprising:

[0012] A first heating plate and a second heating plate are disposed in the cavity, wherein the first heating plate is located above the second heating plate;

[0013] A temperature collection unit is provided on the first heating plate and the second heating plate to collect the temperature of the first heating plate and the second heating plate;

[0014] The control unit is disposed outside the cavity and adjusts the output power of the execution unit according to the received temperature information of the first heating plate and the second heating plate;

[0015] An execution unit is arranged outside the cavity and is connected to the first heating disk and the second heating disk respectively to heat the first heating disk and the second heating disk;

[0016] Wherein, the control unit is a PID controller, which selects multiple temperature regions for segmented PID tuning and performs PID adjustment on the execution unit.

[0017] In one embodiment, the temperature acquisition unit includes a plurality of temperature measuring thermocouples:

[0018] The plurality of temperature measuring thermocouples are arranged on the first heating plate and are used to detect and collect the temperature of the first heating plate.

[0019] In one embodiment, the first heating plate is a ceramic plate;

[0020] The temperature measuring thermocouple is adhered to the first heating plate by using ceramic glue.

[0021] In one embodiment, the plurality of temperature measuring thermocouples are distributed in the monitoring center, middle area and edge area of ​​the first heating plate:

[0022] The monitoring center is the center point of the heating plate;

[0023] The middle area is the inner circle heating area of ​​the heating plate;

[0024] The edge area is the outer ring heating area of ​​the heating disk.

[0025] In one embodiment, the control unit adjusts the current ratio output by the execution unit to the first heating disk according to the received temperature change of the first heating disk, and the current ratio is the ratio of the outer circle current to the inner circle current of the heating disk.

[0026] In one embodiment, the control unit includes a first thermostat and a second thermostat, and the execution unit includes a plurality of power controllers:

[0027] The first temperature controller adjusts the power output to the power controller to control the heating of the inner ring and the outer ring of the first heating plate;

[0028] The second temperature controller adjusts the power output to the power controller to control the heating of the second heating plate.

[0029] In one embodiment, the control unit performs segmented PID tuning in the following manner:

[0030] The first heating plate and the second heating plate are heated to generate two corresponding heating curves;

[0031] The two intersection points of the two heating curves are taken as the first inflection point and the second inflection point;

[0032] The first inflection point and the second inflection point are used as the first setting temperature and the second setting temperature of the segmented setting.

[0033] In order to achieve the above object, the present invention provides a temperature control method for a semiconductor chamber double heating plate, comprising the following steps:

[0034] Step S1, collecting and calibrating the temperature of the first heating plate and the second heating plate;

[0035] Step S2, according to the received temperature information of the first heating plate and the second heating plate, select multiple temperature regions for segmented PID tuning, perform PID adjustment on the execution unit, and adjust the output power of the execution unit;

[0036] Step S3, heating the first heating plate and the second heating plate.

[0037] In one embodiment, the step S1 includes:

[0038] A plurality of temperature measuring thermocouples are arranged on the first heating plate to detect and collect the temperature of the first heating plate.

[0039] In one embodiment, the first heating plate is a ceramic plate;

[0040] The step S1 comprises:

[0041] The temperature measuring thermocouple is adhered to the first heating plate by ceramic glue.

[0042] In one embodiment, the step S1 includes:

[0043] Distribute a plurality of temperature measuring thermocouples in the monitoring center, middle area and edge area of ​​the first heating plate;

[0044] The monitoring center is the center point of the heating plate;

[0045] The middle area is the inner circle heating area of ​​the heating plate;

[0046] The edge area is the outer ring heating area of ​​the heating disk.

[0047] In one embodiment, the step S2 includes:

[0048] According to the received temperature change information of the first heating disk, the current ratio output by the execution unit to the first heating disk is adjusted, and the current ratio is the ratio of the outer circle current to the inner circle current of the heating disk.

[0049] In one embodiment, the step S2 selects multiple temperature regions for segmented PID tuning, including:

[0050] The first heating plate and the second heating plate are heated to generate two corresponding heating curves;

[0051] The two intersection points of the two heating curves are taken as the first inflection point and the second inflection point;

[0052] The first inflection point and the second inflection point are used as the first setting temperature and the second setting temperature of the segmented setting.

[0053] In one embodiment, the first heating plate is a ceramic plate, and the second heating plate is an aluminum plate;

[0054] In step S2, the first heating plate and the second heating plate are heated to generate two corresponding heating curves, including:

[0055] The ceramic plate is first heated to a first temperature;

[0056] Continue to heat the ceramic plate and the aluminum plate simultaneously, the ceramic plate is heated to the second temperature, and the aluminum plate is heated to the third temperature;

[0057] After the temperature is stabilized, the heating of the aluminum plate is stopped, and the heating of the ceramic plate continues to be increased to the fourth temperature.

[0058] The present invention proposes a temperature control system and method for a semiconductor chamber with two heating plates, which can respectively collect and calibrate the temperatures of the two heating plates under different temperature environments, and combine the collection and improvement of PID control curves at different temperatures to achieve precise temperature control of the two heating plates in a single chamber; by observing the change range of the heating curve and coordinating the temperature multi-stage PID setting, the best temperature control measurement is found to achieve the purpose of stable heating of the heating plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] The above and other features, properties and advantages of the present invention will become more apparent through the following description in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always represent the same features, wherein:

[0060] Figure 1 A principle block diagram of a temperature control system of a semiconductor chamber with two heating plates according to an embodiment of the present invention is disclosed;

[0061] Figure 2 A schematic diagram of a heating plate temperature rise curve according to an embodiment of the present invention is disclosed;

[0062] Figure 3 A flow chart of a temperature control method of a semiconductor chamber double heating plate according to an embodiment of the present invention is disclosed.

[0063] The meanings of the reference numerals in the figures are as follows:

[0064] 100 first cavity;

[0065] 110 a first heating plate;

[0066] 120 second heating plate;

[0067] 200 second cavity;

[0068] 300 control unit;

[0069] 310 first thermostat;

[0070] 320 second thermostat;

[0071] 400 execution units;

[0072] 410 a first power controller;

[0073] 420 second power controller;

[0074] 430 a third power controller;

[0075] 440 fourth power controller;

[0076] 450 Fifth Power Controller;

[0077] 460 Sixth power controller. DETAILED DESCRIPTION

[0078] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the invention and are not used to limit the invention.

[0079] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the form, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0080] The temperature control system of the semiconductor chamber double heating disk proposed by the present invention comprises a plurality of chambers, including:

[0081] A first heating plate and a second heating plate are arranged in each cavity;

[0082] A first heating plate and a second heating plate are disposed in the cavity, wherein the first heating plate is located above the second heating plate;

[0083] A temperature acquisition unit is connected to the control unit and is disposed on the first heating plate and the second heating plate to acquire the temperature of the first heating plate and the second heating plate and to send the acquired temperature information to the control unit;

[0084] The control unit is disposed outside the cavity and adjusts the output power of the execution unit according to the received temperature information of the first heating plate and the second heating plate;

[0085] An execution unit is arranged outside the cavity, connected to the control unit, and respectively connected to the first heating disk and the second heating disk to heat the first heating disk and the second heating disk;

[0086] Wherein, the control unit is a PID controller, which selects multiple temperature regions for segmented PID tuning and performs PID adjustment on the execution unit.

[0087] Figure 1 The principle block diagram of the temperature control system of the semiconductor chamber double heating plate according to one embodiment of the present invention is disclosed. Figure 1 In the illustrated embodiment, the semiconductor chamber is a dual-chamber structure, including a first chamber 100 and a second chamber 200 .

[0088] Taking the first cavity 100 as an example, the first cavity 100 is provided with a first heating plate 110 and a second heating plate 120 .

[0089] In the prior art, a TC wafer is generally used and placed on a heating plate for temperature acquisition and calibration. A TC wafer is a high-precision temperature measurement device and can be considered as a wafer with 17 temperature detection points attached.

[0090] In this embodiment, the first heating plate 110 located at the top is a ceramic plate, and the second heating plate 120 located at the bottom is an aluminum plate.

[0091] For the second heating plate 120 , the temperature acquisition unit may use a wafer thermometer to perform temperature acquisition and calibration, and send the acquired temperature information to the control unit 300 , but for the first heating plate 110 , the above method cannot be used for temperature acquisition and calibration.

[0092] For the first heating plate 110 , the temperature acquisition unit uses a plurality of temperature measuring thermocouples, which are arranged on the first heating plate 110 , for detecting and acquiring the temperature of the first heating plate 110 , and sending the acquired temperature information to the control unit 300 .

[0093] In this embodiment, the temperature acquisition unit uses 17 temperature measuring thermocouples with level 1 accuracy configured in the same manner as the wafer thermometer, and the temperature measuring thermocouples are adhered to the surface of the ceramic disk located above with ceramic glue to test the temperature uniformity of the entire disk surface.

[0094] Ceramic glue is a unique adhesive with a temperature resistance of more than 1000°C and has thermal conductivity and thermal expansion coefficient similar to those of ceramic disk surface materials. Its main component is Al2O3, which will not damage the ceramic disk surface or contaminate the chamber during the test.

[0095] In this embodiment, 17 temperature measuring thermocouples are distributed in three areas of the first heating plate, namely the monitoring center, the middle area and the edge area:

[0096] The monitoring center is the center point of the heating plate and is a temperature measuring point of a thermocouple;

[0097] The middle area is the inner ring heating area of ​​the heating plate, and 8 temperature measuring points of thermocouples are evenly distributed;

[0098] The edge area is the outer ring heating area of ​​the heating disk, and 8 temperature measuring thermocouple temperature measuring points are evenly distributed.

[0099] The temperature measurement points in each area are equally and evenly distributed.

[0100] By using the method of pasting temperature measuring thermocouples, the corresponding relationship between the temperature change of the upper cover ceramic disk and the current ratio can be directly collected, thereby providing basic and accurate heating data for temperature adjustment in the chamber and facilitating process temperature adjustment.

[0101] The control unit 300 is disposed outside the cavity, and adjusts the output power of the execution unit 400 according to the received temperature information of the first heating plate 110 and the second heating plate 120 .

[0102] The control unit 300 adjusts the current ratio output by the execution unit 400 to the ceramic disk according to the received temperature change of the ceramic disk. Each time the current ratio is adjusted, a set of temperature data is recorded to find the current ratio with the most uniform temperature on the surface of the ceramic disk and the current ratio that makes the temperature of the ceramic disk within a safe range. It should be noted that the current ratio here refers to the ratio of the outer circle current to the inner circle current of the heating disk.

[0103] exist Figure 1 In the illustrated embodiment, the control unit 300 includes a first temperature controller 310 and a second temperature controller 320, and the execution unit 400 includes six power controllers, namely a first power controller 410, a second power controller 420, a third power controller 430, a fourth power controller 440, a fifth power controller 450 and a sixth power controller 460:

[0104] The first temperature controller 410 adjusts the power output of the four power controllers, namely the first power controller 410, the second power controller 420, the third power controller 430, and the fourth power controller 440, to control the heating of the inner ring and the outer ring of the first heating plate 110 in the two cavities;

[0105] The second temperature controller adjusts the power output of two power controllers, namely the fifth power controller 450 and the sixth power controller 460, to control the heating of the second heating plates 120 in the two cavities.

[0106] In the prior art, power controllers are all arranged in remote boxes, and each temperature controller can only control one heating plate. Therefore, for two chambers, four temperature controllers are required to control the four heating plates respectively.

[0107] In the present invention, for two chambers, one temperature controller can simultaneously control the output of the inner and outer rings of the two ceramic disks, and another temperature controller controls the output of the two aluminum disks.

[0108] Therefore, in the present invention, only two temperature controllers are needed to control the outputs of six power controllers, thereby accurately controlling the temperatures of the two heating plates.

[0109] This new design saves space for two thermostats, which not only improves the operating efficiency of the equipment, but also makes the layout of the equipment more compact, thus achieving dual savings in energy and space.

[0110] The control unit is a PID controller, and the parameter setting of the PID controller is the core content of the control system design. It determines the proportional coefficient, integral time and differential time of the PID controller according to the characteristics of the controlled process.

[0111] Usually, PID tuning only needs to be done at the process temperature. The adjustment principle is to adjust the proportional gain according to the deviation between the output and the given value so that the system can reach the given value.

[0112] In the prior art, a PID adjustment is usually used to achieve the control of the whole process of heating and stabilization. However, the semiconductor chamber involved in the present invention has two upper and lower heating plates. During the heating process, the resistance of the heating plate will change with the change of temperature. Therefore, during the whole heating process, if only one PID adjustment is used, the problem of heating rate alarm will occur because the temperature cannot be raised at a constant rate.

[0113] After testing and practical application, the present invention found that for areas with large temperature changes, using multi-segment PID to set different temperature zones is an effective solution. By adjusting the parameters of the PID controller in sections, the best control effect can be achieved in different temperature ranges.

[0114] In this embodiment, the control unit performs segmented PID tuning in the following manner:

[0115] The first heating plate and the second heating plate are heated to generate two corresponding heating curves;

[0116] The two intersection points of the two heating curves are taken as the first inflection point and the second inflection point;

[0117] The first inflection point and the second inflection point are used as the first setting temperature and the second setting temperature of the segmented setting.

[0118] The two heating plates in the same side cavity can be heated simultaneously to generate two corresponding heating curves. The shapes of each heating curve are similar, but the inflection points are different.

[0119] Figure 2 A schematic diagram of a heating plate temperature rise curve according to an embodiment of the present invention is disclosed. Figure 2 As shown in the figure, point A is the turning point where the heating speed suddenly increases. After point A, a small current is output and the temperature of the heating plate rises rapidly. As the temperature rises, the heating speed gradually slows down after point B, and the output current begins to decrease. This is because when approaching the target temperature, in order to prevent temperature overshoot.

[0120] It is necessary to find the inflection point where the two temperature rises intersect and approach each other during the heating process. In fact, the inflection point here is the two points where the heating rate suddenly changes.

[0121] In this embodiment, generating a heating plate temperature rise curve to find an inflection point further includes the following steps:

[0122] During the heating process, the temperature is first raised according to the set safety slope V℃ / min until the target temperature T℃ is reached;

[0123] If the speed is too fast during the heating process, the target temperature T℃ can be changed continuously, and the value of each change is the current value T1℃ plus the set rate, that is, T=T1+V;

[0124] When the target temperature is reached, PID tuning is performed.

[0125] The PID adjusted at this time is not suitable for the overall heating condition, so it is necessary to cool down to room temperature and then heat up again. By observing the curve at this time, the inflection point can be found.

[0126] In addition, in this embodiment, since the ceramic disk has the largest change in the low temperature zone and the high temperature zone, the following steps are performed when the ceramic disk and the aluminum disk are heated:

[0127] The ceramic plate is first heated to a first temperature;

[0128] The ceramic plate and the aluminum plate are heated at the same time, the ceramic plate is heated to the second temperature, and the aluminum plate is heated to the third temperature;

[0129] After the temperature is stabilized, the heating of the aluminum plate is stopped, and the heating of the ceramic plate continues to be increased to the fourth temperature.

[0130] For the process temperature of 550℃ for ceramic disc and 400℃ for aluminum disc, the temperature is raised by the following steps:

[0131] First, heat the ceramic plate to 200°C;

[0132] Then the ceramic plate and the aluminum plate are heated simultaneously, the ceramic plate is heated to 440°C, and the aluminum plate is heated to 400°C;

[0133] After the temperature stabilizes, stop heating the aluminum plate and continue heating the ceramic plate to 550°C.

[0134] Table 1 is a table showing the relationship between the temperature range and the set temperature corresponding to different temperature zones. As shown in Table 1, X1 is the maximum temperature in the first temperature range of the segmented setting, X2 is the maximum temperature in the second temperature range of the segmented setting, and T2 is the temperature adjustment value of the thermostat. X1 and X2 can be obtained by combining the A and B inflection points with the temperature adjustment value T2.

[0135] Table 1

[0136] Temperature range Set temperature Paragraph 1 0~[X1≥(A+T2)] A Paragraph 2 [X1≥(A+T2)]~[X2≥(B+T2)] B Paragraph 3 [X2≥(B+T2)]~(+∞) Final process temperature

[0137] When setting the temperature, the thermostat will first slightly lower the target temperature, usually between 1-3°C, and then slightly raise the temperature, also between 1-3°C. This process will be repeated twice to accurately adjust the required temperature. When setting the interval, adjust according to the temperature adjustment value T2 of different thermostats.

[0138] For example, if the temperature adjustment value of the thermostat used is 3°C, then the T2 value should be set to 3. Users determine the value of T2 based on the thermostat they choose and set the corresponding interval to achieve precise temperature control.

[0139] When setting the process temperature, there is one thing to note:

[0140] If the process temperature range is between (B+20) and (+∞), and the process temperature set point is greater than or equal to (B+20+T2), then the T2 temperature must be greater than the overshoot temperature during PID adjustment.

[0141] Taking the process temperature between 430℃ and 550℃ as an example, if the third segment range is set to 420℃~(+∞), then it is very reasonable to set the inflection point temperature of the second segment, 400℃, as the set temperature.

[0142] Based on the temperature control system of the semiconductor chamber double heating disk, the present invention further proposes a temperature control method of the semiconductor chamber double heating disk.

[0143] Figure 3 A flow chart of a method for controlling the temperature of a semiconductor chamber with two heating plates according to an embodiment of the present invention is disclosed. As shown in Figure 3, the method for controlling the temperature of a semiconductor chamber with two heating plates according to the present invention comprises the following steps:

[0144] Step S1, collecting and calibrating the temperature of the first heating plate and the second heating plate;

[0145] Step S2, according to the received temperature information of the first heating plate and the second heating plate, select multiple temperature regions for segmented PID tuning, perform PID adjustment on the execution unit, and adjust the output power of the execution unit;

[0146] Step S3, heating the first heating plate and the second heating plate.

[0147] In some embodiments, step S1 includes:

[0148] A plurality of temperature measuring thermocouples are arranged on the first heating plate to detect and collect the temperature of the first heating plate.

[0149] In some embodiments, the first heating plate is a ceramic plate;

[0150] The step S1 comprises:

[0151] The temperature measuring thermocouple is adhered to the first heating plate by ceramic glue.

[0152] In some embodiments, step S1 includes:

[0153] Distribute a plurality of temperature measuring thermocouples in the monitoring center, middle area and edge area of ​​the first heating plate;

[0154] The monitoring center is the center point of the heating plate;

[0155] The middle area is the inner circle heating area of ​​the heating plate;

[0156] The edge area is the outer ring heating area of ​​the heating disk.

[0157] In some embodiments, step S2 includes:

[0158] According to the received temperature change information of the first heating disk, the current ratio output by the execution unit to the first heating disk is adjusted, and the current ratio is the ratio of the outer circle current to the inner circle current of the heating disk.

[0159] In some embodiments, the step S2 selects multiple temperature regions for segmented PID tuning, including:

[0160] The first heating plate and the second heating plate are heated to generate two corresponding heating curves;

[0161] The two intersection points of the two heating curves are taken as the first inflection point and the second inflection point;

[0162] The first inflection point and the second inflection point are used as the first setting temperature and the second setting temperature of the segmented setting.

[0163] In some embodiments,

[0164] The first heating plate is a ceramic plate, and the second heating plate is an aluminum plate;

[0165] In step S2, the first heating plate and the second heating plate are heated to generate two corresponding heating curves, including:

[0166] The ceramic plate is first heated to a first temperature;

[0167] The ceramic plate and the aluminum plate are heated at the same time, the ceramic plate is heated to the second temperature, and the aluminum plate is heated to the third temperature;

[0168] After the temperature is stabilized, the heating of the aluminum plate is stopped, and the heating of the ceramic plate continues to be increased to the fourth temperature.

[0169] Since the specific implementation details of the temperature control method of the semiconductor chamber double heating disks correspond to the aforementioned temperature control system of the semiconductor chamber double heating disks, the specific details will not be repeated here.

[0170] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0171] The temperature control system and method of a semiconductor chamber double heating plate proposed by the present invention have the following beneficial effects:

[0172] 1) It can effectively detect the uniformity of the temperature change of the heating plate and the appropriate current ratio in different temperature ranges, so as to prevent the heating plate from breaking due to uneven temperature of the inner and outer circles of the heating plate during the heating process;

[0173] 2) Through temperature setting and interval judgment, it can ensure that the heating plate heats up quickly at the maximum set speed while keeping the speed almost constant, which not only improves the efficiency but also ensures the safety and service life of the heating plate.

[0174] In the description of the present invention, it should be noted that the directions or positional relationships indicated by terms such as “upper”, “lower”, “front”, “back”, “left”, “right”, “vertical”, “inside” and “outside” are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0175] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0176] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more, unless otherwise clearly specified.

[0177] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0178] The above embodiments are provided for persons familiar with the art to implement or use the present invention. Personnel familiar with the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.

Claims

1. A temperature control system for a semiconductor chamber with double heating plates, characterized in that: include: A first heating plate and a second heating plate are disposed in the cavity, wherein the first heating plate is located above the second heating plate; A temperature collection unit is provided on the first heating plate and the second heating plate to collect the temperature of the first heating plate and the second heating plate; The control unit is disposed outside the cavity and adjusts the output power of the execution unit according to the received temperature information of the first heating plate and the second heating plate; An execution unit is arranged outside the cavity and is connected to the first heating disk and the second heating disk respectively to heat the first heating disk and the second heating disk; Wherein, the control unit is a PID controller, which selects multiple temperature regions for segmented PID tuning and performs PID adjustment on the execution unit; The control unit performs segmented PID tuning in the following manner: The first heating plate and the second heating plate are heated to generate two corresponding heating curves; The two intersection points of the two heating curves are taken as the first inflection point and the second inflection point; The first inflection point and the second inflection point are used as the first setting temperature and the second setting temperature of the segmented setting.

2. The temperature control system of the semiconductor chamber double heating plate according to claim 1, characterized in that: The temperature acquisition unit includes several temperature measuring thermocouples: The plurality of temperature measuring thermocouples are arranged on the first heating plate and are used to detect and collect the temperature of the first heating plate.

3. The temperature control system of the semiconductor chamber double heating plate according to claim 2, characterized in that: The first heating plate is a ceramic plate; The temperature measuring thermocouple is adhered to the first heating plate by using ceramic glue.

4. The temperature control system of the semiconductor chamber double heating plate according to claim 2, characterized in that: The plurality of temperature measuring thermocouples are distributed in the monitoring center, middle area and edge area of ​​the first heating plate: The monitoring center is the center point of the heating plate; The middle area is the inner circle heating area of ​​the heating plate; The edge area is the outer ring heating area of ​​the heating disk.

5. The temperature control system of the semiconductor chamber double heating plate according to claim 1, characterized in that: The control unit adjusts the current ratio output by the execution unit to the first heating disk according to the received temperature change of the first heating disk, wherein the current ratio is the ratio of the outer circle current to the inner circle current of the heating disk.

6. The temperature control system of the semiconductor chamber double heating plate according to claim 1, characterized in that: The control unit includes a first temperature controller and a second temperature controller, and the execution unit includes a plurality of power controllers: The first temperature controller adjusts the power output to the power controller to control the heating of the inner ring and the outer ring of the first heating plate; The second temperature controller adjusts the power output to the power controller to control the heating of the second heating plate.

7. A temperature control method for a semiconductor chamber double heating plate, characterized in that: The following steps are involved: Step S1, collecting and calibrating the temperature of the first heating plate and the second heating plate; Step S2, according to the received temperature information of the first heating plate and the second heating plate, select multiple temperature regions for segmented PID tuning, perform PID adjustment on the execution unit, and adjust the output power of the execution unit; Step S3, heating the first heating plate and the second heating plate; Wherein, the step S2 selects multiple temperature regions for segmented PID tuning, including: The first heating plate and the second heating plate are heated to generate two corresponding heating curves; The two intersection points of the two heating curves are taken as the first inflection point and the second inflection point; The first inflection point and the second inflection point are used as the first setting temperature and the second setting temperature of the segmented setting.

8. The temperature control method of the semiconductor chamber double heating plate according to claim 7, characterized in that: The step S1 comprises: A plurality of temperature measuring thermocouples are arranged on the first heating plate to detect and collect the temperature of the first heating plate.

9. The temperature control method of the semiconductor chamber double heating plate according to claim 8, characterized in that: The first heating plate is a ceramic plate; The step S1 comprises: The temperature measuring thermocouple is adhered to the first heating plate by ceramic glue.

10. The temperature control method of the semiconductor chamber double heating plate according to claim 8, characterized in that: The step S1 comprises: Distribute a plurality of temperature measuring thermocouples in the monitoring center, middle area and edge area of ​​the first heating plate; The monitoring center is the center point of the heating plate; The middle area is the inner circle heating area of ​​the heating plate; The edge area is the outer ring heating area of ​​the heating disk.

11. The temperature control method of the semiconductor chamber double heating plate according to claim 7, characterized in that: The step S2 comprises: According to the received temperature change information of the first heating disk, the current ratio output by the execution unit to the first heating disk is adjusted, and the current ratio is the ratio of the outer circle current to the inner circle current of the heating disk.

12. The temperature control method of the semiconductor chamber double heating plate according to claim 7, characterized in that: The first heating plate is a ceramic plate, and the second heating plate is an aluminum plate; In step S2, the first heating plate and the second heating plate are heated to generate two corresponding heating curves, including: The ceramic plate is first heated to a first temperature; The ceramic plate and the aluminum plate are heated at the same time, the ceramic plate is heated to the second temperature, and the aluminum plate is heated to the third temperature; After the temperature is stabilized, the heating of the aluminum plate is stopped, and the heating of the ceramic plate continues to be increased to the fourth temperature.

Images