Electronic component and sintering method thereof

Abstract

The application belongs to the technical field of electronic ceramic material manufacturing, and particularly relates to an electronic component and a sintering method thereof. The method comprises the following steps: preparing a coating on the inner wall surface of a sagger; preparing sintering powder; the coating and the sintering powder do not react with the electronic component blank in the sintering process; the blank is placed in a pretreated sagger on which the sintering powder is laid, and the sintering process is performed after the sintering powder is laid on the surface of the blank, so that the electronic component is obtained. The coating and the sintering powder do not react with the blank in the sintering process, which prevents the electronic component blank to be sintered from directly contacting the sagger such as alumina, and avoids the reaction between the blank and the sagger in the high-temperature sintering process, so that the surface of the sintered electronic component product is prevented from forming sintering holes. Meanwhile, the heating uniformity of the blank in the sintering process is improved, the blank is isolated from air, a low oxygen partial pressure atmosphere is formed, the sintering atmosphere required for product sintering is provided, and the quality of the electronic component is ensured.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of electronic ceramic material manufacturing, and particularly relates to an electronic component and a sintering method thereof. BACKGROUND

[0002] In recent years, with the rapid development of CPUs (Central Processing Unit) and memories of electronic products such as VR (Virtual Reality), MR (Mixed Reality) and smart devices, the MLCF (Multi-layer Ceramic Chip Filters) with high resonance frequency points, low ESL (Equivalent Series Inductance) characteristics and effective decoupling in high-speed signal circuits are widely used. The X7R dielectric material system has been widely studied at home and abroad. Among them, the BaTiO3-based ferroelectric system is widely used due to its excellent dielectric properties and temperature stability. Generally, Mn 3+ , Cr 3+ , Co 3+ plasmas are added to BaTiO3 as acceptor impurities to replace Ti 4+ ions, which can form various types of perovskite structures, limit the movement of domain walls, and inhibit electron conduction, thereby effectively reducing dielectric loss and improving dielectric properties.

[0003] However, it is found that the Co-doped three-terminal ceramic capacitive filter has a large number of holes on the surface of the ceramic body after sintering in the MLCF manufacturing process. Analysis shows that, when sintering with an alumina crucible, on the one hand, Co is easy to react with Al2O3 to form CoAl2O4 blue spinel, which forms surface sintering holes after falling off, and on the other hand, insufficient sintering atmosphere during sintering will also cause surface holes. Although the industry at this stage mostly uses Ni mesh and zirconia crucible to sinter MLCF, for Co-doped three-terminal ceramic capacitive filters, using Ni mesh and zirconia crucible for sintering, the product and the crucible will not react, but surface sintering holes caused by uneven heating will occur, and the grains on the surface of the ceramic body will abnormally grow, reducing the dielectric constant of the ceramic and increasing the dielectric loss of the ceramic. Therefore, for Co-doped three-terminal ceramic capacitive filters and other electronic components, the problem of surface sintering holes that affect the electrical properties and reliability of the product cannot be completely solved at present. SUMMARY

[0004] The application aims to provide an electronic component and a sintering method thereof, and aims to solve the problem that the existing Co-doped three-terminal ceramic capacitor filter electronic component is prone to react with a sagger during a sintering process and is prone to form sintering holes on a surface.

[0005] To achieve the above-mentioned application purposes, the application adopts the technical solutions as follows.

[0006] In a first aspect, the application provides a sintering method of an electronic component, comprising the following steps:

[0007] A coating layer is prepared at least on an inner cavity wall surface of the sagger to obtain a pretreated sagger; the coating layer does not react with a sintering body of the electronic component during a sintering process;

[0008] A sintering powder is prepared; the sintering powder does not react with the sintering body of the electronic component during the sintering process;

[0009] The sintering body of the electronic component is placed in the pretreated sagger in which the sintering powder is laid, and after the sintering powder is laid on a surface of the sintering body of the electronic component, a sintering treatment is performed to obtain an electronic component.

[0010] In some possible implementation manners, the sagger comprises at least one of an alumina sagger, a zirconia sagger, and a corundum mullite sagger.

[0011] In some possible implementation manners, the electronic component is a Co-doped ceramic filter, and preparation of the Co-doped ceramic filter comprises the following steps:

[0012] A Co-doped X7R ceramic coating layer is prepared at least on an inner cavity wall surface of the sagger to obtain the pretreated sagger;

[0013] A Co-doped X7R ceramic sintering powder is prepared;

[0014] The sintering body of the Co-doped ceramic filter is placed in the pretreated sagger in which the Co-doped X7R ceramic sintering powder is laid, and after the Co-doped X7R ceramic sintering powder is laid on a surface of the sintering body, the sintering treatment is performed to obtain a Co-doped ceramic filter.

[0015] In some possible implementation manners, the step of preparing the Co-doped X7R ceramic coating layer comprises:

[0016] A first Co-doped X7R ceramic material is mixed with a dispersing agent, a binder, a plasticizer, and a solvent to form a mixed coating;

[0017] The mixed coating is formed into a wet film layer at least on an inner cavity wall surface of the sagger, and after drying, a sintering treatment is performed to form the Co-doped X7R ceramic coating layer on the inner cavity wall surface of the sagger.

[0018] In some possible implementation manners, the step of preparing the Co-doped X7R ceramic sintering powder comprises:

[0019] The second Co-doped X7R ceramic material is ground and granulated with the binder solution to obtain a granulated powder;

[0020] The granulated powder is subjected to pre-sintering treatment and then sintering treatment, and is ground to obtain the Co-doped X7R ceramic sintering powder.

[0021] In some possible implementation manners, in the first Co-doped X7R ceramic material and the second Co-doped X7R ceramic material, the X7R ceramic material independently comprises at least one of BaTiO3-MgO-ZnO, BaTiO3-Nb2O5-MgO-BaCO3, respectively.

[0022] In some possible implementation manners, the binder comprises at least one of B76 (polyvinyl butyral), B44 (ethyl acrylate), A21 (methyl methacrylate).

[0023] In some possible implementation manners, the plasticizer comprises at least one of DOP (dioctyl phthalate), DBP (dibutyl phthalate).

[0024] In some possible implementation manners, the dispersant comprises at least one of castor oil, KD-1 (cationic dispersant), AKM-0531 (anionic dispersant).

[0025] In some possible implementation manners, the solvent comprises at least one of n-propyl acetate, isobutyl alcohol, anhydrous ethanol.

[0026] In some possible implementation manners, in the binder solution, the binder comprises at least one of polyvinyl alcohol, polyvinyl butyral ester; and the solvent comprises at least one of n-propyl acetate, isobutyl alcohol, anhydrous ethanol.

[0027] In some possible implementation manners, in the mixed coating, the mass ratio of the first Co-doped X7R ceramic material, the dispersant, the binder, the plasticizer and the solvent is 1:(0.01-0.03):(0.06-0.09):(0.015-0.03):(1-2).

[0028] In some possible implementation manners, in the binder solution, the mass ratio of the binder and the solvent is 1:(80-150).

[0029] In some possible implementations, the mass ratio of the second Co-doped X7R ceramic material to the binder is 1:(0.03-0.08).

[0030] In some possible implementations, the method for preparing the mixed coating includes ball milling.

[0031] In some possible implementations, the method for preparing the wet film layer includes at least one of soaking, spraying, and brushing.

[0032] In some possible implementations, the temperature for drying the wet film layer is 100-140 ℃, and the time duration is 1-3 h.

[0033] In some possible implementations, the conditions for sintering treatment after drying the wet film layer include: increasing the temperature to 1000-1500 ℃ at a rate of 5-10 ℃ / min in an air atmosphere, and maintaining the temperature for 1-3 h.

[0034] In some possible implementations, the conditions for the pre-sintering treatment of the granulated powder include: increasing the temperature to 800-1000 ℃ at a rate of 5-10 ℃ / min, and maintaining the temperature for 1-3 h.

[0035] In some possible implementations, the conditions for the sintering treatment of the granulated powder include: increasing the temperature to 1100-1500 ℃ at a rate of 5-10 ℃ / min, and maintaining the temperature for 1-3 h.

[0036] In some possible implementations, the particle size of the Co-doped X7R ceramic sintered powder is not higher than 0.25 mm.

[0037] In some possible implementations, the Co-doped X7R ceramic coating includes at least three sub-coatings, and the preparation includes the following steps:

[0038] The mixed coating is made into a first wet film layer on the inner cavity wall surface of the sagger, dried, and sintered to form a first sub-coating;

[0039] The mixed coating is made into a second wet film layer on the surface of the first sub-coating, dried, and sintered to form a second sub-coating;

[0040] The mixed coating is made into a third wet film layer on the surface of the second sub-coating, dried, and sintered to form a third sub-coating; and the Co-doped X7R ceramic coating is obtained.

[0041] In some possible implementations, the thickness of the Co-doped X7R ceramic coating is 1-1.5 mm.

[0042] In some possible implementation manners, in the Co-doped X7R ceramic coating, the thickness of the first sub-coating is 0.3-0.5 mm, the thickness of the second sub-coating is 0.3-0.5 mm, and the thickness of the third sub-coating is 0.3-0.5 mm.

[0043] In some possible implementation manners, the Co-doped X7R ceramic sintering powder is laid in the pre-treatment saggar with a thickness of 0.3-0.5 mm.

[0044] In some possible implementation manners, the Co-doped X7R ceramic sintering powder is laid on the surface of the green body with a thickness of 0.3-0.5 mm.

[0045] In some possible implementation manners, the conditions for performing the sintering treatment on the green body of the Co-doped ceramic filter include: using a box-type sintering furnace, heating at a rate of 5-10 ℃ / min to 1000-1300 ℃, and keeping the temperature for 1-3 h.

[0046] In a second aspect, the present application provides an electronic component, which is prepared by using the sintering method.

[0047] The sintering method for the electronic component provided by the first aspect of the present application has the following advantages. On the one hand, the coating is prepared on at least the inner wall surface of the saggar, and the coating does not react with the green body of the electronic component to be sintered in the sintering process, thereby blocking the direct contact between the green body of the electronic component to be sintered and the saggar, such as alumina, and avoiding the reaction between the green body and the saggar in the high-temperature sintering process, so as to prevent the formation of sintering holes on the surface of the sintered electronic component product. On the other hand, the sintering powder which does not react with the green body of the electronic component in the sintering process is prepared, and the sintering powder is laid in the pre-treatment saggar and laid on the surface of the green body of the electronic component to be sintered, so as to further block the contact between the green body and the saggar, improve the uniformity of the heating of the green body in the sintering process, and enable the green body to be isolated from air to form a low-oxygen partial pressure atmosphere, so as to provide a sintering atmosphere required for the sintering of the product, and thus ensure the quality of the electronic component. In addition, the pre-treated saggar and the sintering powder can be recycled, which not only improves the sintering quality of the electronic component product, reduces the sintering holes on the surface of the product, and is conducive to improving the dielectric properties of the electronic component product, but also is economic and environmentally friendly.

[0048] The electronic component provided by the second aspect of the present application is prepared by using the above method, which improves the sintering quality of the electronic component product, reduces the sintering holes on the surface of the product, and improves the dielectric properties of the electronic component product. BRIEF DESCRIPTION OF DRAWINGS

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0050] Figure 1 The sintering method of the electronic component is provided in the embodiments of the present application. DETAILED DESCRIPTION

[0051] In order to make the technical problems, technical solutions and beneficial effects of the present application more clear, the present application will be further described in detail in combination with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0052] In the present application, the term "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B can mean that A exists alone, A and B exist together, and B exists alone. Wherein A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after it.

[0053] In the present application, "at least one" means one or more, and "multiple" means two or more. "At least one" or similar expressions mean any combination of these items, including any combination of single item or multiple items. For example, "at least one of a, b or c", or "at least one of a, b and c", can mean a, b, c, a-b (i.e. a and b), a-c, b-c, or a-b-c, wherein a, b and c can be single or multiple.

[0054] It should be understood that in various embodiments of the present application, the size of the sequence number of the above processes does not mean the order of execution, and part or all of the steps can be executed in parallel or in sequence, and the execution order of each process should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0055] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0056] The weight of the related components mentioned in the embodiments of the present application can not only refer to the specific content of each component, but also represent the proportional relationship between the weights of each component. Therefore, as long as the content of the related components in the embodiments of the present application is enlarged or reduced in proportion, it is within the scope disclosed by the embodiments of the present application. Specifically, the mass mentioned in the embodiments of the present application can be μg, mg, g, kg and other mass units commonly known in the chemical field.

[0057] The terms "first", "second" are only used for descriptive purposes, to distinguish objects such as substances from each other, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. For example, without departing from the scope of the embodiments of the present application, the first XX can also be referred to as the second XX, and similarly, the second XX can also be referred to as the first XX. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features.

[0058] The first aspect of the embodiments of the present application provides a sintering method of electronic components, as shown in the accompanying drawings, comprising the following steps: Figure 1 The first aspect of the embodiments of the present application provides a sintering method of electronic components, as shown in the accompanying drawings, comprising the following steps:

[0059] S01. At least a coating is prepared on the inner wall surface of the inner cavity of the sagger, to obtain a pretreated sagger; the coating does not react with the electronic component blank to be sintered during the sintering process;

[0060] S02. A sintering powder is prepared, which does not react with the electronic component blank during the sintering process;

[0061] S03. The electronic component blank is placed in the pretreated sagger paved with the sintering powder, and after paving the sintering powder on the surface of the electronic component blank, sintering treatment is performed to obtain the electronic component.

[0062] The sintering method of the electronic component provided by the first aspect of the embodiment of the present application has the following advantages. On the one hand, a coating layer is prepared on at least the inner cavity wall surface of the sagger, the coating layer does not react with the electronic component blank to be sintered in the sintering process, and direct contact between the electronic component blank to be sintered and the sagger such as alumina is blocked, thereby avoiding the reaction between the blank and the sagger in the high-temperature sintering process and preventing the formation of sintering holes on the surface of the sintered electronic component product. On the other hand, sintering powder that does not react with the electronic component blank in the sintering process is prepared, the sintering powder is laid in the pretreated sagger and covers the surface of the electronic component blank to be sintered, further blocking the contact between the blank and the sagger, improving the uniformity of the heating of the blank in the sintering process, and enabling the blank to be isolated from air to form a low-oxygen partial pressure atmosphere and provide a sintering atmosphere required for the sintering of the product, thereby ensuring the quality of the electronic component. In addition, the pretreated sagger and the sintering powder of the present application can be recycled, which not only improves the sintering quality of the electronic component product, reduces the sintering holes on the surface of the product, and is conducive to improving the dielectric properties of the electronic component product, but also is economic and environmentally friendly.

[0063] In some possible implementations, the sagger includes at least one of an alumina sagger, a zirconia sagger, and a corundum mullite sagger, which are prone to react with the blank of the electronic component in the high-temperature sintering process. For example, when the electronic component is a Co-doped ceramic filter, the Co is prone to react with Al2O3 to form CoAl2O4 blue spinel in the sintering process using the alumina sagger, and the spinel is prone to fall off and form sintering holes on the surface of the Co-doped ceramic filter product, thereby affecting the quality and performance of the Co-doped ceramic filter.

[0064] In some possible implementations, the electronic component is a Co-doped ceramic filter, which can be a Co-doped three-terminal ceramic capacitor filter or other components.

[0065] In some possible implementations, the electronic component is a Co-doped ceramic filter, and the preparation of the Co-doped ceramic filter includes the following steps.

[0066] S10. At least a Co-doped X7R ceramic coating layer is prepared on the inner cavity wall surface of the sagger to obtain a pretreated sagger.

[0067] S20. A Co-doped X7R ceramic sintering powder is prepared.

[0068] S30. The blank of the Co-doped ceramic filter is placed in the pretreated sagger in which the Co-doped X7R ceramic sintering powder is laid, and the Co-doped X7R ceramic sintering powder is laid on the surface of the blank, and then sintering treatment is performed to obtain the Co-doped ceramic filter.

[0069] In the sintering method of the Co-doped ceramic filter, on the one hand, a Co-doped X7R ceramic coating is prepared on the inner cavity wall surface of the sagger, the coating is the same as or similar to the material of the Co-doped ceramic filter, and will not react with the Co-doped ceramic filter in the sintering process, so as to effectively prevent the Co-doped ceramic filter from chemically reacting with the alumina sagger directly and provide part of the sintering atmosphere required by the product sintering. On the other hand, a Co-doped X7R ceramic sintering powder is prepared, the sintering powder will not react with the green body, the sintering powder is laid in the pretreated sagger and covers the surface of the green body of the Co-doped ceramic filter to be sintered, so as to further block the contact between the green body and the sagger, improve the uniformity of the heating of the green body in the sintering process, and enable the sintering powder to isolate the green body from air to form an atmosphere with a lower oxygen partial pressure, thereby providing the sintering atmosphere required by the product sintering and ensuring the quality of the Co-doped ceramic filter.

[0070] In the step S10, the Co-doped X7R ceramic coating is prepared on the inner cavity wall surface of the sagger.

[0071] In some possible implementations, the step of preparing the Co-doped X7R ceramic coating on the inner cavity wall surface of the sagger includes:

[0072] S11. Mixing the first Co-doped X7R ceramic material with a dispersant, a binder, a plasticizer, and a solvent to form a mixed coating.

[0073] S12. Forming a wet film layer of the mixed coating on at least the inner cavity wall surface of the sagger, drying, and then sintering to form the Co-doped X7R ceramic coating on the inner cavity wall surface of the sagger.

[0074] In the sintering method of the Co-doped ceramic filter, on the one hand, a Co-doped X7R ceramic coating is prepared on the inner cavity wall surface of the sagger, the coating is the same as or similar to the material of the Co-doped ceramic filter, and will not react with the Co-doped ceramic filter in the sintering process, so as to effectively prevent the Co-doped ceramic filter from chemically reacting with the alumina sagger directly and provide part of the sintering atmosphere required by the product sintering. On the other hand, a Co-doped X7R ceramic sintering powder is prepared, the sintering powder will not react with the green body, the sintering powder is laid in the pretreated sagger and covers the surface of the green body of the Co-doped ceramic filter to be sintered, so as to further block the contact between the green body and the sagger, improve the uniformity of the heating of the green body in the sintering process, and enable the sintering powder to isolate the green body from air to form an atmosphere with a lower oxygen partial pressure, thereby providing the sintering atmosphere required by the product sintering and ensuring the quality of the Co-doped ceramic filter.

[0075] In the step S11, the Co-doped amount in the first Co-doped X7R ceramic material can be any amount, and the X7R ceramic material system can be a BaTiO3-based doped ceramic powder system, which has wide adaptability and is flexible and convenient to apply.

[0076] In some possible implementations, in the first Co-doped X7R ceramic material, the X7R ceramic material includes at least one of BaTiO3-MgO-ZnO, BaTiO3-Nb2O5-MgO-BaCO3. These ceramic materials all have good comprehensive performance.

[0077] In some possible implementations, the binder includes at least one of B76 (polyvinyl butyral), B44 (ethyl acrylate), A21 (methyl methacrylate); these binders can increase the viscosity of the mixed coating of the Co-doped X7R ceramic material, and facilitate the formation of a stable wet film layer on the surface of the sagger.

[0078] In some possible implementations, the plasticizer includes at least one of DOP (dioctyl phthalate), DBP (dibutyl phthalate); these plasticizers can change the viscosity and fluidity of the slurry, making it easier to process and shape. The fluidity of the slurry can be increased, making it easier to inject into a mold or spray on a substrate, while maintaining the shape stability of the slurry during the shaping process.

[0079] In some possible implementations, the dispersant includes at least one of castor oil, KD-1 (cationic dispersant), AKM-0531 (anionic dispersant); these dispersants can rapidly wet the surface of the Co-doped X7R ceramic material particles, and can raise the energy barrier between solid particles to a high enough level, effectively improving the particle wetting, suspension stability and slurry rheology of the slurry under low moisture content conditions, and making the slurry have a suitable viscosity to achieve the purpose of energy saving and consumption reduction.

[0080] In some possible implementations, the solvent includes at least one of n-propyl acetate, isobutyl alcohol, anhydrous ethanol; these solvents are mainly used to adjust the viscosity and fluidity of the mixed coating, and enhance the stability and printability of the coating.

[0081] In some possible implementations, in the mixed coating, the mass ratio of the first Co-doped X7R ceramic material, the dispersant, the binder, the plasticizer and the solvent is 1:(0.01-0.03):(0.06-0.09):(0.015-0.03):(1-2); under this ratio, the mixed coating has a suitable viscosity and fluidity, which is conducive to the subsequent preparation of a stable wet film layer on the surface of the sagger.

[0082] In some possible implementations, the method for preparing the mixed coating includes mixing and ball milling; through ball milling, the Co-doped X7R ceramic material is fully mixed and uniform with the solvent, the dispersant and the binder to form a mixed coating with dispersion stability.

[0083] In some embodiments, the Co-doped X7R ceramic material, the solvent and the dispersant are added to the ball mill tank according to the formula, and ball milled for 8-18 h; the ball-to-material ratio is (2-3):1; after ball milling, the formula amount of the binder and the plasticizer is added, and the second ball milling is performed for 24-36 h to obtain the mixed coating.

[0084] In some embodiments, the mixed coating has the same formula as the green body of the Co-doped X7R ceramic filter to be sintered, and no additional coating formula needs to be prepared, thereby simplifying the operation process and improving the preparation efficiency.

[0085] In some possible implementations, the method of preparing the wet film layer includes at least one of soaking, spraying, and brushing, and the mixed coating is applied to the surface of the saggar to form the wet film layer.

[0086] In some embodiments, the method of preparing the wet film layer uses soaking, and the saggar is soaked in the prepared mixed coating for about 30 minutes, so that the coating is uniformly adhered to the surface of the saggar. Soaking the saggar can make the coating more uniformly adhere, and also allows the coating to partially penetrate into the saggar, thereby achieving stronger adhesion after sintering.

[0087] In some possible implementations, the temperature for drying the wet film layer is 100-140℃, and the time is 1-3h; under this drying condition, the solvent in the wet film layer can be fully removed, and a dry film layer of the coating is formed on the surface of the saggar.

[0088] In some possible implementations, the sintering condition after drying the wet film layer includes: heating to 1000-1500℃ at a rate of 5-10℃ / min in an air atmosphere, and maintaining the temperature for 1-3h. Under this sintering condition, the Co-doped X7R ceramic in the coating film layer reacts with the alumina and other substances in the saggar at high temperature to form another phase (CoAl2O4) adhered to the surface of the saggar; and the dispersant, binder, plasticizer, and other additives in the coating are decomposed and volatilized during the high-temperature sintering process, and thus are not left behind. Thus, the Co-doped X7R ceramic coating is formed on the surface of the saggar.

[0089] In some possible implementations, the Co-doped X7R ceramic coating includes at least three sub-coatings, and the preparation includes the following steps:

[0090] The mixed coating is prepared into a first wet film layer on the inner cavity wall of the saggar, and after drying, the first sub-coating is formed by sintering. After drying the first wet film layer, the Co-doped X7R ceramic in the coating reacts with the alumina and other substances in the saggar at high temperature to form another phase (CoAl2O4) adhered to the surface of the saggar during the sintering process; the dispersant, binder, plasticizer, and other additives in the coating are decomposed and volatilized during the high-temperature sintering process, and thus are not left behind, thereby forming the Co-doped X7R ceramic coating on the surface of the saggar, i.e., forming the first sub-coating. Due to the formation of the CoAl2O4 phase and other phases, the first sub-coating is blue.

[0091] The mixed coating is made into a second wet film layer on the surface of the first sub-coating, and after drying and sintering, a second sub-coating is formed. The second wet film layer is formed on the surface of the first sub-coating, and after drying, only a small amount of Co-doped X7R ceramic material in the coating can further react with the kiln during the sintering process, and most of the Co-doped X7R ceramic does not react. The dispersant, binder, plasticizer and other additives will decompose and volatilize during the high-temperature sintering process, and the second sub-coating is formed on the surface of the first sub-coating. Because the second sub-coating is basically free of new phases, the second sub-coating formed is light brown or brownish yellow.

[0092] The mixed coating is made into a third wet film layer on the surface of the second sub-coating, and after drying and sintering, a third sub-coating is formed. The third wet film layer is formed on the surface of the second sub-coating, and after drying and sintering, it basically does not react, but only sintered and adhered to the second sub-coating to form a third sub-coating on the surface of the second sub-coating, and a Co-doped X7R ceramic coating is obtained, and the surface of the kiln is brownish yellow.

[0093] The Co-doped X7R ceramic coating is prepared by preparing three sub-coatings in the embodiments of the present application, which can not only make the coating reach a certain thickness, but also block the direct contact between the electronic device blank to be sintered and the alumina kiln, thereby avoiding the reaction between the blank and the kiln during high-temperature sintering, which leads to the formation of sintering holes on the surface of the sintered electronic device product. It is also beneficial to ensure that the coating is uniform and free of cracking, improve the adhesion strength and stability of the coating and the kiln, and prevent the coating from falling off, cracking and other phenomena.

[0094] In some possible implementations, the thickness of the Co-doped X7R ceramic coating is 1-1.5 mm. The Co-doped X7R ceramic coating with this thickness can sufficiently ensure that the electronic device blank to be sintered is blocked from directly contacting the alumina kiln, thereby avoiding the reaction between the blank and the kiln during high-temperature sintering, which leads to the formation of sintering holes on the surface of the sintered electronic device product. At the same time, after the coating is prepared, it is in contact with one side of the product blank, providing a low oxygen partial pressure atmosphere, thereby providing part of the sintering atmosphere required for product sintering.

[0095] In some possible implementations, the thickness of the first sub-coating in the Co-doped X7R ceramic coating is 0.3-0.5 mm, the thickness of the second sub-coating is 0.3-0.5 mm, and the thickness of the third sub-coating is 0.3-0.5 mm. Under this condition, the thickness of the three sub-coatings in the Co-doped X7R ceramic coating ensures that the overall thickness of the Co-doped X7R ceramic coating is beneficial to block the direct contact reaction between the blank and the alumina kiln, which leads to the formation of sintering holes on the surface of the sintered product. It also ensures the adhesion strength and stability of the Co-doped X7R ceramic coating and the kiln, and prevents the coating from falling off, cracking and other phenomena.

[0096] In the above step S20,

[0097] In some possible implementation manners, the step of preparing the Co-doped X7R ceramic sintering powder includes:

[0098] S21. Grinding and granulating the second Co-doped X7R ceramic material with the binder solution to obtain a granulated powder;

[0099] S22. After the pre-sintering treatment of the granulated powder, performing a sintering treatment, and grinding to obtain the Co-doped X7R ceramic sintering powder.

[0100] The Co-doped X7R ceramic sintering powder prepared by the embodiment of the present application will not react with the green body. The sintering powder is laid in the pre-treatment crucible and covers the surface of the green body of the Co-doped ceramic filter to be sintered, further blocking the contact between the green body and the crucible, improving the uniformity of the green body in the sintering process, and enabling the sintering powder to isolate the green body from the air to form a low oxygen partial pressure atmosphere, providing the sintering atmosphere required for product sintering, and thus ensuring the quality of the Co-doped ceramic filter.

[0101] In the step S21, the Co-doped amount in the second Co-doped X7R ceramic material can be any amount, and the X7R ceramic material system can be selected from a BaTiO3-based doped ceramic powder system, which has wide adaptability and is flexible and convenient to apply.

[0102] In some possible implementation manners, the X7R ceramic material in the second Co-doped X7R ceramic material includes at least one of BaTiO3-MgO-ZnO, BaTiO3-Nb2O5-MgO-BaCO3, and these ceramic materials all have good comprehensive performance.

[0103] In some possible implementation manners, the binder in the binder solution includes at least one of PVA (polyvinyl alcohol) and PVB (polyvinyl butyral ester), and the solvent includes at least one of n-propyl acetate, isobutyl alcohol, and anhydrous ethanol. In this case, after the binder solution is mixed with the Co-doped X7R ceramic material, it is beneficial to the granulation of the Co-doped X7R ceramic material.

[0104] In some possible implementation manners, the mass ratio of the binder to the solvent in the binder solution is 1:(80-150). In this case, the ratio of the binder to the solvent in the binder solution makes the binder solution have a suitable concentration, which is beneficial to the granulation of the Co-doped X7R ceramic material.

[0105] In some possible implementation manners, the mass ratio of the second Co-doped X7R ceramic material to the binder is 1:(0.03-0.08). In this ratio, it is beneficial to the granulation of the Co-doped X7R ceramic material and the binder.

[0106] In some embodiments, the binder solution is prepared by stirring the binder and solvent at a ratio of 1:100 for 24 hours, and then a formula amount of Co-doped X7R ceramic powder is placed in a mortar and a formula amount of the binder solution is added for grinding and granulation.

[0107] In some possible implementations, the pre-sintering conditions for the granulated powder include heating at a rate of 5-10°C / min to 800-1000°C and holding for 1-3 hours. In this case, the pre-sintering process ensures the solid phase reaction of the raw materials and removes moisture and organic matter.

[0108] In some possible implementations, the sintering conditions for the granulated powder include heating at a rate of 5-10°C / min to 1100-1500°C and holding for 1-3 hours. In this case, the sintering process causes the Co-doped X7R ceramic material particles to grow into grains at high temperature, and a Co-doped X7R ceramic sintered powder is obtained. The sintering temperature conditions sufficiently ensure the solid phase reaction between the Co-doped X7R ceramic materials, while avoiding over-sintering of the raw materials, which would destroy the crystal structure of the powder.

[0109] In some possible implementations, the particle size of the Co-doped X7R ceramic sintered powder is not greater than 0.25 mm. In some embodiments, the sintered powder is removed, ground in a mortar, and sieved through a 60-mesh screen to obtain the sintered powder. The sintered powder used in the embodiments of the present application has small particles, which has a better covering effect on the green body of the Co-doped ceramic filter to be sintered during the re-sintering process, better blocks the contact between the green body and the sagger, improves the uniformity of the heating of the green body during the sintering process, better isolates the green body from the air, forms a low oxygen partial pressure atmosphere, provides the sintering atmosphere required for the sintering of the product, and thus ensures the quality of the Co-doped ceramic filter.

[0110] In the above step S30:

[0111] In some possible implementations, the Co-doped X7R ceramic sintered powder is laid in the pretreated sagger with a thickness of 0.3-0.5 mm. In some possible implementations, the Co-doped X7R ceramic sintered powder is laid on the surface of the green body with a thickness of 0.3-0.5 mm. The Co-doped X7R ceramic sintered powder used in the embodiments of the present application does not need to completely embed the green body, but only needs to cover the surface of the green body with a thickness of 0.3-0.5 mm, which can better block the contact between the green body and the sagger, improve the uniformity of the heating of the green body during the sintering process, isolate the green body from the air, form a low oxygen partial pressure atmosphere, provide the sintering atmosphere required for the sintering of the product, and thus ensure the quality of the Co-doped ceramic filter.

[0112] In some possible implementations, the conditions of the sintering process of the body of the Co-doped ceramic filter include: using box sintering, increasing the temperature to 1000-1300℃ at a rate of 5-10℃ / min, and keeping the temperature for 1-3h. The box sintering is used in the embodiments of the present application, and the heat conduction mode is mainly convection. The heat is transferred through the contact with the sintering pot, and the heat is directly transferred through the convection for the surface not in contact with the sintering pot. The heating efficiencies of the two are different. The sintering powder covering the bottom and the surface of the body makes the body heat through the medium from both the front and back surfaces during the sintering process, and the uniformity of the heating is greatly improved. The sintering quality of the Co-doped ceramic filter product is improved under the sintering conditions, the sintering holes on the surface of the product are reduced, and the dielectric properties of the Co-doped ceramic filter product are improved.

[0113] In a second aspect, the embodiments of the present application provide an electronic component, which is prepared by using the sintering method.

[0114] The electronic component prepared by using the sintering method has improved sintering quality, reduced sintering holes on the surface of the product, and improved dielectric properties.

[0115] In some embodiments, the electronic component is a Co-doped ceramic filter, which can be a Co-doped three-terminal ceramic capacitor filter or other devices.

[0116] In order to make the above-mentioned implementation details and operations of the present application clearly understood by those skilled in the art, and the performance of the electronic component and the sintering method thereof is significantly embodied, the above-mentioned technical solutions are illustrated by multiple embodiments as follows.

[0117] Embodiment 1

[0118] A Co-doped three-terminal ceramic capacitor filter, and a sintering method thereof, includes the following steps:

[0119] (1) preparing a coating in a sintering pot:

[0120] ① coating preparation: 1000g of Co-doped X7R ceramic powder (BaTiO3-Nb2O5-ZnO-Co2O3), 1500g of solvent (n-propyl acetate and isobutyl alcohol), and 20g of castor oil dispersant are added to a ball mill tank for one-time ball milling for 12h, the ball-to-material ratio is 2:1, 75g of B76 binder and 22.5g of DOP plasticizer are added after ball milling for 12h, and secondary ball milling is performed for 24h to prepare the coating;

[0121] ② coating the sintering pot: the empty alumina sintering pot is soaked in the prepared coating for 30min, so that the coating is uniformly adhered to the surface of the sintering pot;

[0122] ③ Preparation of sintering kiln reaction layer: the soaked kiln was taken out and baked in a 120°C oven for 2h. After drying, it was placed in a box furnace and heated to 1200°C at a rate of 5°C / min, and kept for 2h. Then it was cooled to room temperature in the furnace. At this time, the surface of the kiln was blue (color after reaction), forming a first coating layer;

[0123] ④ Preparation of sintering kiln coating layer: the kiln after the first sintering was repeated steps ② and ③ twice, and the second and third coating layers were formed on the surface of the first coating layer. At this time, the surface of the kiln was brownish yellow, and the preparation of the inner coating layer of the kiln was completed.

[0124] (2) Preparation of sintered powder:

[0125] ① Granulation: 500g of Co-doped X7R ceramic powder (BaTiO3-Nb2O5-ZnO-Co2O3) was taken and put into a mortar. 25g of PVA solution (mass ratio of PVA to solvent was 1:100) was added for grinding and granulation;

[0126] ② Pre-sintering treatment: the granulated powder was placed in a crucible and pre-sintered in a box furnace at a rate of 5°C / min to 900°C, and kept for 1h;

[0127] ③ Sintering treatment: the pre-sintered powder was ground and placed in a crucible. Sintering was carried out in a box furnace at a rate of 5°C / min to 1200°C, and kept for 2h;

[0128] ⑤ Sieving: the sintered powder was taken out, ground in a mortar, and sieved through a 60 mesh sieve to obtain sintered powder.

[0129] (3) Preparation of Co-doped three-terminal ceramic capacitive filter:

[0130] The kiln with prepared coating layer was placed on the table, and a layer of sintered powder with a thickness of 0.3mm was evenly spread in the kiln. The body of the Co-doped three-terminal ceramic capacitive filter was evenly spread in the coating kiln with sintered powder, and the products should not be stacked. A layer of sintered powder was evenly sprinkled on the body, and the sintered powder only needed to cover the products, with a thickness of 0.3mm. Sintering was carried out at a rate of 5°C / min to 1150°C for 2h to obtain the Co-doped three-terminal ceramic capacitive filter.

[0131] Example 2

[0132] A Co-doped three-terminal ceramic capacitive filter, the sintering method comprising the steps of:

[0133] (1) Preparation of coating layer in the kiln:

[0134] ① Coating preparation: 1000 g of Co-doped X7R ceramic powder (BaTiO3-MgO-ZnO), 1500 g of solvent (n-propyl acetate and isobutyl alcohol), and 20 g of castor oil dispersant were added to a ball mill tank according to the formula, and ball milling was performed for 12 h at a ball-to-material ratio of 2:1. After the first ball milling for 12 h, 62.4 g of B76 binder and 20.5 g of DOP plasticizer were added, and secondary ball milling was performed for 24 h to prepare the coating.

[0135] ② Coating and sintering of the kiln: the empty alumina kiln was soaked in the prepared coating for 30 min to allow the coating to adhere uniformly to the surface of the kiln;

[0136] ③ Preparation of the reaction layer of the sintered kiln: the soaked kiln was taken out and baked in a 120℃ oven for 2 h. After drying, it was placed in a box furnace and heated to 1200℃ at a rate of 5℃ / min, and then held for 2 h. The kiln was then cooled to room temperature, and the surface of the kiln was blue (after reaction), forming a first coating;

[0137] ④ Preparation of the coating of the sintered kiln: the kiln after the first sintering was repeated steps ② and ③ twice, and the second and third coatings were formed on the surface of the first coating, respectively. At this time, the surface of the kiln was brownish yellow, and the preparation of the coating in the kiln was completed.

[0138] (2) Preparation of sintered powder:

[0139] ① Granulation: 500 g of Co-doped X7R ceramic powder (BaTiO3-MgO-ZnO) was placed in a mortar and 25 g of PVA solution (PVA to solvent at a mass ratio of 1:100) was added for grinding and granulation;

[0140] ② Pre-sintering treatment: the granulated powder was placed in a crucible and pre-sintered in a box furnace at a rate of 5℃ / min to 900℃, and held for 1 h;

[0141] ③ Sintering treatment: the pre-sintered powder was ground and placed in a crucible, and sintered in a box furnace at a rate of 5℃ / min to 1200℃, and held for 2 h;

[0142] ⑤ Sieving: the sintered powder was taken out, ground in a mortar, and sieved through a 60 mesh sieve to obtain the sintered powder.

[0143] (3) Preparation of Co-doped three-terminal ceramic capacitor filter:

[0144] The prepared coating box is placed on the table, and a layer of sintering powder is evenly spread in the box to a thickness of 0.3 mm; the body of the Co-doped three-terminal ceramic capacitive filter is evenly laid in the coating box with sintering powder, and the products should not be stacked; a layer of sintering powder is evenly sprinkled on the body, and the sintering powder only needs to cover the products, with a thickness of 0.3 mm. Sinter at 1150°C for 2 hours at a heating rate of 5°C / min to obtain a Co-doped three-terminal ceramic capacitive filter.

[0145] Example 3

[0146] (1) Prepare the coating in the box according to Example 1:

[0147] (2) Prepare the sintering powder according to Example 1:

[0148] (3) Preparation of Co-doped three-terminal ceramic capacitive filter:

[0149] The prepared coating box is placed on the table, and a layer of sintering powder is evenly spread in the box to a thickness of 0.4 mm; the body of the Co-doped three-terminal ceramic capacitive filter is evenly laid in the coating box with sintering powder, and the products should not be stacked; a layer of sintering powder is evenly sprinkled on the body, and the sintering powder only needs to cover the products, with a thickness of 0.4 mm. Sinter at 1150°C for 2 hours at a heating rate of 5°C / min to obtain a Co-doped three-terminal ceramic capacitive filter.

[0150] Example 4

[0151] (1) Prepare the coating in the box according to Example 1:

[0152] (2) Prepare the sintering powder according to Example 1:

[0153] (3) Preparation of Co-doped three-terminal ceramic capacitive filter:

[0154] The prepared coating box is placed on the table, and a layer of sintering powder is evenly spread in the box to a thickness of 0.5 mm; the body of the Co-doped three-terminal ceramic capacitive filter is evenly laid in the coating box with sintering powder, and the products should not be stacked; a layer of sintering powder is evenly sprinkled on the body, and the sintering powder only needs to cover the products, with a thickness of 0.5 mm. Sinter at 1150°C for 2 hours at a heating rate of 5°C / min to obtain a Co-doped three-terminal ceramic capacitive filter.

[0155] Example 5

[0156] (1) Prepare the coating in the box according to Example 1:

[0157] (2) Prepare the sintering powder according to Example 1:

[0158] (3) Preparation of Co-doped three-terminal ceramic capacitive filter:

[0159] The prepared coating kiln is placed on the table top, and a layer of sintering powder is evenly spread in the kiln, with a thickness of 0.28 mm; the body of the Co-doped three-terminal ceramic capacitive filter is evenly laid in the coating kiln with sintering powder, and the products should not be stacked; a layer of sintering powder is evenly sprinkled on the body, and the sintering powder only needs to cover the products, with a thickness of 0.28 mm. Sintering at a temperature increasing rate of 5 ℃ / min to 1150 ℃ for 2 hours, a Co-doped three-terminal ceramic capacitive filter is obtained.

[0160] Example 6

[0161] (1) Preparation of coating in the kiln according to Example 1:

[0162] (2) Preparation of sintering powder according to Example 1:

[0163] (3) Preparation of Co-doped three-terminal ceramic capacitive filter:

[0164] The prepared coating kiln is placed on the table top, and a layer of sintering powder is evenly spread in the kiln, with a thickness of 0.28 mm; the body of the Co-doped three-terminal ceramic capacitive filter is evenly laid in the coating kiln with sintering powder, and the products should not be stacked; a layer of sintering powder is evenly sprinkled on the body, and the sintering powder only needs to cover the products, with a thickness of 0.28 mm. Sintering at a temperature increasing rate of 5 ℃ / min to 1150 ℃ for 2 hours, a Co-doped three-terminal ceramic capacitive filter is obtained.

[0165] Comparative Example 1

[0166] Preparation of a Co-doped three-terminal ceramic capacitive filter:

[0167] The body of the Co-doped three-terminal ceramic capacitive filter is evenly laid in the kiln, and the products should not be stacked; sintering at a temperature increasing rate of 5 ℃ / min to 1150 ℃ for 2 hours, a Co-doped three-terminal ceramic capacitive filter is obtained.

[0168] Further, in order to verify the progressiveness of the embodiments of the present application, taking a product with a capacitance of 220 pF as an example, the surface hole conditions of the filters prepared in the above examples and comparative examples, as well as the insulation resistance, capacitance deviation rate, etc. of the filters are tested respectively:

[0169] 1. Insulation resistance test:

[0170] The test is carried out according to GJB360B-2009 method 302 and the following supplementary provisions:

[0171] a) Test condition: rated DC voltage applied, time 60 s;

[0172] b) Test voltage applied point: product input / output terminal and ground terminal.

[0173] 2. Capacitance test: test according to GJB360B-2009 method 305 and the following supplementary provisions:

[0174] a) TH2828 or equivalent instrument, clamp is used;

[0175] b) Test frequency and test voltage are subject to specific product provisions;

[0176] c) Test clamp is connected to product input / output terminal and ground terminal respectively;

[0177] Among them, the capacitance test condition is 1KHz / 1V, the ideal capacitance is 220pF, and the insulation resistance min is 1000MΩ.

[0178] 3. Surface hole condition test: surface hole is observed under 40 magnifying glass.

[0179] 4. The test results are shown in Table 1 as follows:

[0180] Table 1

[0181] Surface hole condition Insulation resistance Capacitance Capacitance deviation Example 1 No hole 2.552 TΩ 234 pF +6.4％ Example 2 No hole 1.908 TΩ 243 pF +10.5％ Example 3 No hole 1.457 TΩ 232 pF +5.5％ Example 4 No hole 449.4 GΩ 208 pF -5.4％ Example 5 Small amount of hole 199.2 GΩ 182 pF -17.3％ Example 6 Small amount of hole 194.3 GΩ 183 pF -16.8％ Comparative Example 1 Large amount of hole 44.92 GΩ 124 pF Comparative Example 2 Large amount of hole 44.92 GΩ 124 pF -43.6％

[0182] Note: Capacitance has a standard value, and in the actual process, due to shrinkage difference, capacitance may be high or low, so the deviation is ±.

[0183] From the above test results, it can be seen that the insulation resistance of the Co-doped three-terminal ceramic capacitive filter prepared by the sintering of the coating and the sintering powder in the embodiment of the application is improved from 50-100GΩ to more than 1TΩ, the insulation resistance is improved by more than 10 times, the capacitance deviation is improved from ±50% to ±20%, and the sintering density and electrical property stability of the Co-doped three-terminal ceramic capacitive filter product are greatly improved. As can be seen from Comparative Examples 1-4 and Examples 5-6, when the surface of the ceramic sintering powder is coated with a thickness of 0.3-0.5mm, the sintering density and electrical property stability of the Co-doped three-terminal ceramic capacitive filter product are more improved. In the crucible of Comparative Example 1, no coating and sintering powder is prepared, and the surface of the prepared Co-doped three-terminal ceramic capacitive filter product has a large number of holes, which seriously affects its application performance.

[0184] The above only describes the preferred embodiments of the application and is not intended to limit the application. Any modification, equivalent replacement and improvement made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A method of sintering electronic components, characterized by, The method comprises the following steps: Preparation of a coating on at least the inner wall surface of the inner cavity of the sagger to obtain a pretreated sagger; the coating does not react with the electronic component body to be sintered during the sintering process; the electronic component is a Co-doped ceramic filter; the coating is a Co-doped X7R ceramic coating; Preparation of a sintering powder; the sintering powder does not react with the electronic component body during the sintering process; the sintering powder is a Co-doped X7R ceramic sintering powder; Placing the electronic component body in the pretreated sagger coated with the sintering powder, and performing a sintering treatment after coating the sintering powder on the surface of the electronic component body to obtain an electronic component.

2. The electronic component sintering method according to claim 1, wherein The sagger comprises at least one of an alumina sagger, a zirconia sagger, and a corundum mullite sagger; And / or, the electronic component is a Co-doped ceramic filter, and the preparation thereof comprises the following steps: Preparation of a Co-doped X7R ceramic coating on at least the inner wall surface of the inner cavity of the sagger to obtain the pretreated sagger; Preparation of a Co-doped X7R ceramic sintering powder; Placing the body of the Co-doped ceramic filter in the pretreated sagger coated with the Co-doped X7R ceramic sintering powder, and performing the sintering treatment after coating the Co-doped X7R ceramic sintering powder on the surface of the body to obtain a Co-doped ceramic filter.

3. The electronic component sintering method according to claim 2, wherein The step of preparing the Co-doped X7R ceramic coating comprises: Mixing a first Co-doped X7R ceramic material with a dispersant, a binder, a plasticizer, and a solvent to obtain a mixed coating; Forming a wet film layer of the mixed coating on at least the inner wall surface of the inner cavity of the sagger, drying, and then performing a sintering treatment to form the Co-doped X7R ceramic coating on the inner wall surface of the inner cavity of the sagger; And / or, the step of preparing the Co-doped X7R ceramic sintering powder comprises: Grinding and granulating a second Co-doped X7R ceramic material with a binder solution to obtain a granulated powder; Performing a pre-sintering treatment on the granulated powder, and then performing a sintering treatment to obtain the Co-doped X7R ceramic sintering powder.

4. The electronic component sintering method according to claim 3, wherein The first and second Co-doped X7R ceramic materials each independently comprise at least one of BaTiO3-MgO-ZnO and BaTiO3-Nb2O5-MgO-BaCO3; And / or, the binder comprises at least one of polyvinyl butyral, ethyl acrylate, and methyl methacrylate; And / or, the plasticizer comprises at least one of dioctyl phthalate and dibutyl phthalate; And / or, the dispersant comprises at least one of castor oil, KD-1, and AKM-0531; And / or, the solvent comprises at least one of n-propyl acetate, isobutyl alcohol, and anhydrous ethanol; And / or, in the binder solution, the binder comprises at least one of polyvinyl alcohol and polyvinyl butyral ester; and the solvent comprises at least one of n-propyl acetate, isobutyl alcohol, and anhydrous ethanol.

5. The electronic component sintering method according to claim 3, wherein The mass ratio of the first Co-doped X7R ceramic material, the dispersant, the binder, the plasticizer and the solvent in the mixed coating is 1:(0.01-0.03):(0.06-0.09):(0.015-0.03):(1-2); And / or, the mass ratio of the binder and the solvent in the binder solution is 1:(80-150); And / or, the mass ratio of the second Co-doped X7R ceramic material and the binder is 1:(0.03-0.08).

6. The sintering method of electronic components according to any one of claims 3 to 5, characterized in that, The method for preparing the mixed coating comprises ball milling; And / or, the method for preparing the wet film layer comprises at least one of soaking, spraying and brushing; And / or, the temperature for drying the wet film layer is 100-140℃, and the time duration is 1-3h; And / or, the sintering treatment condition for the wet film layer after drying comprises: heating to 1000-1500℃ at a rate of 5-10℃ / min in air atmosphere, and holding for 1-3h; And / or, the pre-sintering treatment condition for the granulated powder comprises: heating to 800-1000℃ at a rate of 5-10℃ / min, and holding for 1-3h; And / or, the sintering treatment condition for the granulated powder comprises: heating to 1100-1500℃ at a rate of 5-10℃ / min, and holding for 1-3h.

7. The electronic component sintering method according to claim 6, wherein The particle size of the Co-doped X7R ceramic sintered powder is not higher than 0.25mm; And / or, the Co-doped X7R ceramic coating comprises at least three sub-coatings, and the preparation thereof comprises the following steps: forming a first wet film layer of the mixed coating on the inner cavity wall surface of the sagger, and sintering the dried first wet film layer to form a first sub-coating; forming a second wet film layer of the mixed coating on the surface of the first sub-coating, and sintering the dried second wet film layer to form a second sub-coating; forming a third wet film layer of the mixed coating on the surface of the second sub-coating, and sintering the dried third wet film layer to form a third sub-coating; obtaining the Co-doped X7R ceramic coating.

8. The electronic component sintering method according to claim 7, wherein The thickness of the Co-doped X7R ceramic coating is 1-1.5mm; And / or, in the Co-doped X7R ceramic coating, the thickness of the first sub-coating is 0.3-0.5mm, the thickness of the second sub-coating is 0.3-0.5mm, and the thickness of the third sub-coating is 0.3-0.5mm.

9. The sintering method of electronic components according to any one of claims 2 to 5, 7 or 8, characterized by, The laying thickness of the Co-doped X7R ceramic sintered powder in the pre-treatment sagger is 0.3-0.5mm; And / or, the laying thickness of the Co-doped X7R ceramic sintered powder on the surface of the green body is 0.3-0.5mm; And / or, the sintering treatment condition for the green body of the Co-doped ceramic filter comprises: using box sintering, heating to 1000-1300℃ at a rate of 5-10℃ / min, and holding for 1-3h.

10. An electronic component, characterized by The electronic component is prepared by the sintering method according to any one of claims 1-9.

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